Carl Zeiss NTS
AURIGA CrossBeam
und EVO am MPA
Stuttgart
Stefan Bueble
Carl Zeiss SMT
Enabling the Nano-Age World®
Feature Size
Market
>1m
Human
Carl Zeiss SMT
1µm
(1m/106)
1 pm
(1m/1012)
MPA Stuttgart 2010
Life Style
Classical Optics
Biomedical
Sciences and
Health Care
Optical Microscopy
Semiconductor
Optical Litho
AIMS
Mask Repair/ CE
Life Science
Materials Analysis
Biomedical
Sciences
Semiconductor
SEM/CrossBeam
He-Ion Microscopy
TEM
Ant
(2 mm)
1mm
(1m/103)
1nm
(1m/109)
Products
Pollen
(~50 µm)
Flue virus
(~100 nm)
Hair
(~50 µm)
Bacteria
(a few µm)
Mask
(100 nm)
Structured IC
(<100 nm)
DNA
(to 1nm)
Atom
(to 0,1 nm)
Page 2
Introduction: Product Portfolio
FE SEM
CrossBeam®
HIM
LIBRA EFTEM
With courtesy of AMD Saxony LLC & Co. KG
MPA Stuttgart 2010
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CrossBeam® Product Line
NVision® 40
NEON® 40 EsB
Auriga™
MPA Stuttgart 2010
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CrossBeam® Series
AURIGATM – Information Beyond Resolution
AURIGA, “The Charioteer”


MPA Stuttgart 2010
Constellation in the
Northern Hemisphere
Located next to GEMINI
constellation
Page 5
CrossBeam® Series
AURIGATM – Information Beyond Resolution
ZEISS next generation
CrossBeam® platform
.... AURIGA
 New concept
 New FIB column
 New multi-purpose chamber
 New GIS
 Proven ULTRAplus
FE-SEM platform
MPA Stuttgart 2010
Page 6
AURIGA – The next Generation
MPA Stuttgart 2010
Page 7
AURIGA – The next Generation
Modularity – Options
Full analytical flexibility
 EsB - detector






 Charge Compensation
» GIS integrated
» UltraPlus-solution
 FIB
EDS: 3 ports
Omniprobe lift-out system: 4 ports
MonoGIS: Upper port, SIMS- & GIS-port
SIMS
4 QBSD / STEM / Cryo / EBSD: 3 ports
Several MP-ports for electrical or cryo feed-throughs
» Canion
» Cobra
 GIS
» ZEISS GIS
» MonoGIS
 Airlock
» Zeiss airlock (80mm)
» 100mm airlock
 Misc
Ion detector, STEM, 4QBSD, SIMS,
EDS, EBSD, Cryo, CL,
micromanipulators …
MPA Stuttgart 2010
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Electron Optics
MPA Stuttgart 2010
Page 9
Beam Sample Interaction
MPA Stuttgart 2010
Page 10
Beam Sample Interaction – Influence of
Beam Energy
5kV
1kV
10kV
Monte Carlo simulation of the beam – sample interaction for a Si sample at 1kV and 10kV.
MPA Stuttgart 2010
Page 12
Beam Sample Interaction – Influence of Beam
Energy
Platinum Rhodium Alloy Crystals at 1kV (left) and at 20kV (right)
MPA Stuttgart 2010
Page 13
Electron Optics
Operating principle of the Gemini column
UEx
U0
Condenser lens
Beam booster
Magnetic lens
Scan coils
Electrostatic lens
Specimen
MPA Stuttgart 2010
Features
 highly stable thermal FEG
< 0.5 % /h variation
Electromagnetic
aperture changer
In-lens SE-detector
Beam path with no
intermediate cross over
UL
 low beam noise
<1%
 cross over free beam path
no significant Boersch effect,
high depth of field
 beam booster
superb image resolution
throughout the whole
beam energy range,
particularly down to 100 eV.
High resistance to ambient
magnetic stray fields
Page 15
Electron Optics
25
Aberration Coefficients [mm]
The Gemini principle
20
Spherical
15
10
Chromatic
5
0
0
Magnetic lens
5
10
15
20
25
30
Beam Energy [KeV]
Electrostatic lens
Principle of the compound magnetic/electrostatic
objective lens with its optical equivalence
No Magnetic field at the sample!!
Constant conditions@all kV!
MPA Stuttgart 2010
Probe Size:
d P  dS2  dC2  dd2  M  d g 
2
Spherical aberration:
dS  0.5 CS  3
Chromatic aberration:
dC  CC
Diffraction Error:
dd 
U

U
1

Page 16
Electron Optics
NOTE:
twin structures
at 510 volts
MPA Stuttgart 2010
Page 17
Beam Sample Interaction
BSE
SE
LLE
AE
50eV
2keV
E=E0
Electron Energy
MPA Stuttgart 2010
Page 18
Gemini - CDS (Complete Detection
System)
EsB
Inlens
Magnetic lens
Electrostatic lens
AsB
STEM
MPA Stuttgart 2010
Page 19
High resolution low voltage SE imaging
Resist Structure on a Silicon Wafer, uncoated, 0.8kV
MPA Stuttgart 2010
Page 20
High resolution low voltage SE imaging
Barley chromosome prepared by fixation, critical point drying, and immuno labeling of spindle apparatus.
MPA Stuttgart 2010
Sample courtesy of Prof. Wanner,
MPI München
Page 21
High resolution low voltage SE imaging
Magnetic materials
High resolution image of a TiN / YbN Multilayer on a magnetic steel substrate
MPA Stuttgart 2010
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Ultra low voltage imaging at 20 Volts
MPA Stuttgart 2010
Page 23
High resolution SE imaging
This is not a Silicon
(111) HR-TEM image!
Uncoated PTFE (Teflon)
macro molecules
imaged by in-lens
detector.
Spacing between
molecules is 20 Å.
MPA Stuttgart 2010
Page 24
Electron Optics
Gemini® with EsB
A new detection principle for the
GEMINI column
Energy and angle selective BSE detection
EsB
MPA Stuttgart 2010
Page 25
Gemini - CDS (Complete Detection
System)
EsB
Inlens
Magnetic lens
Electrostatic lens
AsB
STEM
MPA Stuttgart 2010
Page 26
Electron Optics
SE deflection by continuous variation of Filter Grid energy has no
influence on the primary electrons
Continuous mixing with any other detector is possible
MPA Stuttgart 2010
Page 27
Beam Sample Interaction
BSE
SE
LLE
AE
50eV
2keV
E=E0
Electron Energy
Target is to separate
both informations
MPA Stuttgart 2010
Page 28
High resolution low voltage BSE detection
In-lens SE image
Image taken from In-lens SE
detector showing high degree of
topographical information
MPA Stuttgart 2010
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High resolution low voltage BSE detection
EsB Backscatter
image
MPA Stuttgart 2010
In-lens SE image
Page 30
High resolution low voltage SE detection
W - plug Inlens image 1.2kV
MPA Stuttgart 2010
Page 31
High resolution low voltage BSE detection
Poly Si
TiN
SiO
Si
W - plug Inlens backscatter image 1.2kV
MPA Stuttgart 2010
Page 32
Gemini - CDS (Complete Detection
System)
EsB
Inlens
Magnetic lens
Electrostatic lens
AsB
STEM
MPA Stuttgart 2010
Page 34
4QBSD (AsB) Detector
Gold particles AsB Image
MPA Stuttgart 2010
Page 35
Image analysis Applications (SE)
R/W DVD surface @ 1.58 kV, WD 2mm In-lens SE
MPA Stuttgart 2010
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Image analysis Applications (BSD)
R/W DVD surface @ 1.58 kV, WD 2mm EsB
MPA Stuttgart 2010
Page 37
Ion Detection
150 pA In-Lens FIB SE Image
150 pA Elion FIB SI Image
Sample: Nickel based superalloy exhibiting intergranular corrosion
secondary ion yields for most metals increase by ~ 10X to 1000X (typically ~ 50X) in the presence of
electronegative species such as oxygen in particular. This makes secondary ion imaging very sensitive
to the presence of corrosion, especially at grain boundaries, and makes detection of this corrosion very
fast. This oxygen enhanced yield dominates other contrast mechanisms in ion imaging of metals
MPA Stuttgart 2010
Page 38
Gemini - CDS (Complete Detection
System)
EsB
Inlens
Magnetic lens
Electrostatic lens
AsB
STEM
MPA Stuttgart 2010
Page 39
Automated Sample Preparation
MPA Stuttgart 2010
TEM sample fabricated completely unattended
(time to sample: 30min)
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CrossBeam® TEM Sample Preparation
MPA Stuttgart 2010
Page 41
STEM Imaging
STEM bright field image of a semiconductor
MPA Stuttgart 2010
Page 42
STEM Imaging
Flash memory
Bright field image
MPA Stuttgart 2010
Darkfield image
Page 43
TEM Sample Preparation - STEM Imaging
MPA Stuttgart 2010
Page 44
STEM Imaging
STEM images of a kidney cross section, bright-field mode.
MPA Stuttgart 2010
Page 45
STEM Imaging
Inlens Image
STEM Image
Nanotubes in Gemini STEM - Nickel as catalyst in single wall nanotubes
MPA Stuttgart 2010
Page 46
STEM Imaging
Nanotubes in Gemini STEM - Nickel as catalyst in single wall nanotubes
MPA Stuttgart 2010
Page 47
STEM Imaging
Nanotubes in Gemini STEM
MPA Stuttgart 2010
Page 48
Ion Optics
Ion Optics
MPA Stuttgart 2010
Page 49
The LMIS (Liquid Metal Ion Source)
W – Tip
Taylor cone
Extractor
Ion Beam
The LMIS usually consists of a blunt W field emitter with an end radius of about 10µm, which is coated with a
metal having a high surface tension and a low vapour pressure at its melting point. The field emitter is
heated to the melting point of the metal while a high positive voltage (3-10kV) is placed on it relative to the
extraction electrode. The liquid metal is drawn into a conical shape by the balance between the electrostatic
and surface tension forces. The apex of the liquid metal is drawn to an end radius of a few nm.
MPA Stuttgart 2010
Page 50
The LMIS (Liquid Metal Ion Source)
SEM Micrograph of the liquid metal ion source (LMIS) showing a W needle and a spiral reservoir
spot welded to a heating loop. The reservoir is about 3mm long and contains enough liquid Ga to
last for about 1500h of operation at a total emission current of 1µA.
MPA Stuttgart 2010
Page 51
Gas Injection System
MPA Stuttgart 2010
Page 52
Working principle of the local charge
compensator
MPA Stuttgart 2010
Page 53
Local Charge Compensator with 2 gases
Dry Nitrogen for Charge
compensation
Ozone gas for sample
surface cleaning
After 10 min oxygen cleaning
Applications generated by Jörg Stodolka
MPA Stuttgart 2010
Page 54
In-Situ cleaning while image acquisition
Requirements:
• contamination predominant in chamber
• intensity of cleaning can be reduced as carbon
generation is mitigated immediately
100nm
In-Lens image of Au on C sample, deliberately
contaminated prior to loading, image acquired without
oxygen flow, 1kV, WD 5mm at 150 kX mag after 1min
scanning at 600kX:
contamination visible
MPA Stuttgart 2010
100nm
In-Lens image of same Au on C sample, now acquired
with oxygen flow, 1kV, WD 5mm at 150 kX mag after
1min scanning at 600kX:
no formation of contamination visible
Page 55
Charge Compensation
Careful EHT & pressure tuning visualizes the doping basins and diffusion barrier
MPA Stuttgart 2010
Page 56
Charge Compensation
EDS Analysis – Turbine Blades
EDS Analysis at 15kV with charge compensation.
MPA Stuttgart 2010
Page 57
AURIGA – The next Generation
Sample: ZrO2
Charge compensation
EHT=15kV
c) Analytics (e.g. EDS)
CC off
Cut-off at ~6.5kV
CC on
Cut-off at ~14kV
 Surface charging shifts the cut-off voltage of bremsstrahlung („Duane-Hunt limit“) down to ~6.5kV
 Also no detection of any characteristic X-rays for elemental analysis possible above this cut-off voltage
 CC on: No EDS restrictions
MPA Stuttgart 2010
Page 58
Cross Sections
Cross Section of a Flash Memory (SEM image during polish)
MPA Stuttgart 2010
Page 59
Cross Sections
AMD Opteron Processor (FIB image)
MPA Stuttgart 2010
With courtesy of AMD Saxony LLC & Co. KG
Page 60
Cross Sections
Semiconductors SEM image
MPA Stuttgart 2010
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MPA Stuttgart 2010
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