ZXMD63P02X
DUAL 20V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V(BR)DSS=-20V; RDS(ON)=0.27V; ID=-1.7A
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
MSOP8
FEATURES
•
Low on-resistance
•
Fast switching speed
•
Low threshold
•
Low gate drive
•
Low profile SOIC package
APPLICATIONS
•
DC - DC Converters
•
Power Management Functions
•
Disconnect switches
•
Motor control
ORDERING INFORMATION
DEVICE
REEL SIZE
(inches)
TAPE WIDTH (mm)
QUANTITY
PER REEL
ZXMD63P02XTA
7
12mm embossed
1000 units
ZXMD63P02XTC
13
12mm embossed
4000 units
DEVICE MARKING
•
ZXM63P02
ISSUE 1 - JUNE 2004
1
Top View
ZXMD63P02X
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
LIMIT
UNIT
Drain-Source Voltage
V DSS
-20
V
Gate- Source Voltage
V GS
± 12
V
Continuous Drain Current (V GS=4.5V; T A=25°C)(b)(d)
(V GS=4.5V; T A=70°C)(b)(d)
ID
-1.7
-1.35
A
Pulsed Drain Current (c)(d)
I DM
-9.6
A
Continuous Source Current (Body Diode)(b)(d)
IS
-1.4
A
I SM
-9.6
A
Power Dissipation at T A=25°C (a)(d)
Linear Derating Factor
PD
0.87
6.9
W
mW/°C
Power Dissipation at T A=25°C (a)(e)
Linear Derating Factor
PD
1.04
8.3
W
mW/°C
Power Dissipation at T A=25°C (b)(d)
Linear Derating Factor
PD
1.25
10
W
mW/°C
Operating and Storage Temperature Range
T j:T stg
-55 to +150
°C
Pulsed Source Current (Body Diode)(c)(d)
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)(d)
R θJA
143
°C/W
Junction to Ambient (b)(d)
R θJA
100
°C/W
Junction to Ambient (a)(e)
R θJA
120
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t<10 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
(d) For device with one active die.
(e) For device with two active die running at equal power.
ISSUE 1 - JUNE 2004
2
ZXMD63P02X
Max Power Dissipation (Watts)
CHARACTERISTICS
100
10
1
Thermal Resistance (°C/W)
0.1
DC
1s
100ms
10ms
1ms
100µs
1
0.1
10
100
Refer Note (b)
Refer Note (a)
0.8
0.6
0.4
0.2
0
0
20
40
60
100
80
120
Derating Curve
100
80
D=0.5
40
D=0.2
D=0.1
D=0.05
0
0.0001
1.0
Safe Operating Area
Refer Note (b)
20
1.2
T - Temperature (°)
120
60
1.4
VDS - Drain-Source Voltage (V)
Thermal Resistance (°C/W)
ID - Drain Current (A)
Refer Note (a)
0.001
Single Pulse
0.01
0.1
1
10
160
160
Refer Note (a)
140
120
100
80
D=0.5
60
40
20
D=0.2
D=0.1
D=0.05
0
0.0001 0.001 0.01
100
140
Single Pulse
0.1
1
10
100
1000
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Transient Thermal Impedance
ISSUE 1 - JUNE 2004
3
ZXMD63P02X
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN.
TYP.
MAX.
UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage
V (BR)DSS
Zero Gate Voltage Drain Current
I DSS
Gate-Body Leakage
I GSS
Gate-Source Threshold Voltage
V GS(th)
Static Drain-Source On-State Resistance
(1)
R DS(on)
Forward Transconductance (3)
g fs
-20
V
I D=-250µA, V GS=0V
-1
µA
V DS=-20V, V GS=0V
±100
nA
V GS=± 12V, V DS=0V
V
I D =-250µA, V DS=
V GS
Ω
Ω
V GS=-4.5V, I D=-1.2A
V GS=-2.7V, I D=-0.6A
S
V DS=-10V,I D=-0.6A
-0.7
0.27
0.40
1.3
DYNAMIC (3)
Input Capacitance
C iss
290
pF
Output Capacitance
C oss
120
pF
Reverse Transfer Capacitance
C rss
50
pF
Turn-On Delay Time
t d(on)
3.4
ns
Rise Time
tr
9.6
ns
Turn-Off Delay Time
t d(off)
16.4
ns
Fall Time
tf
20.4
ns
Total Gate Charge
Qg
5.25
nC
Gate-Source Charge
Q gs
1.0
nC
Gate Drain Charge
Q gd
2.25
nC
Diode Forward Voltage (1)
V SD
-0.95
V
T j=25°C, I S=-1.2A,
V GS=0V
Reverse Recovery Time (3)
t rr
21.7
ns
T j=25°C, I F=-1.2A,
di/dt= 100A/µs
Reverse Recovery Charge(3)
Q rr
9.6
nC
V DS=-15 V, V GS=0V,
f=1MHz
SWITCHING(2) (3)
V DD =-10V, I D=-1.2A
R G=6.0Ω, R D=8.3Ω
(Refer to test
circuit)
V DS=-16V,V GS=-4.5V,
I D =-1.2A
(Refer to test
circuit)
SOURCE-DRAIN DIODE
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 1 - JUNE 2004
4
ZXMD63P02X
TYPICAL CHARACTERISTICS
2.5V
-VGS
2V
1
0.1
1
0.1
10
-ID - Drain Current (A)
1.5
-VGS
2
2.5
3
3.5
4
4.5
100
1.6
VGS=-4.5V
ID=-1.2A
1.2
1.0
VGS=VDS
ID=-250uA
0.8
VGS(th)
0.6
0.4
-100
0
50
100
150
200
Normalised RDS(on) and VGS(th)
v Temperature
1
VGS=-3V
VGS=-5V
1
-50
Tj - Junction Temperature (°C)
10
0.1
RDS(on)
1.4
- Gate-Source Voltage (V)
-ISD - Reverse Drain Current (A)
RDS(on) - Drain-Source On-Resistance (Ω)
10
1
Output Characteristics
Typical Transfer Characteristics
0.1
0.1
Output Characteristics
T=150 C
T=25 C
1
2V
1
-VDS - Drain-Source Voltage (V)
VDS=-10V
0.1
2.5V
-VGS
0.1
100
3.5V
3V
-VDS - Drain-Source Voltage (V)
10
1
5V
4.5V
4V
+150°C
Normalised RDS(on) and VGS(th)
-ID - Drain Current (A)
10
3.5V
3V
5V
4.5V
4V
+25 C
-ID - Drain Current (A)
10
10
10
1
T=150°C
T=25°C
0.1
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-ID - Drain Current (A)
-VSD - Source-Drain Voltage (V)
On-Resistance v Drain Current
Source-Drain Diode Forward Voltage
ISSUE 1 - JUNE 2004
5
ZXMD63P02X
C - Capacitance (pF)
700
VGS - Gate-Source Voltage (V)
TYPICAL CHARACTERISTICS
Vgs=0V
f=1Mhz
600
500
Ciss
Coss
Crss
400
300
200
100
0
0.1
1
10
100
5
ID=-1.2A
4.5
4
3.5
VDS=-16V
3
2.5
2
1.5
1
0.5
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
-VDS - Drain Source Voltage (V)
Q -Charge (nC)
Capacitance v Drain-Source Voltage
Gate-Source Voltage v Gate Charge
Basic Gate Charge Waveform
Gate Charge Test Circuit
Switching Time Waveforms
Switching Time Test Circuit
ISSUE 1 - JUNE 2004
6
ZXMD63P02X
PACKAGE DIMENSIONS
DIM
D
Millimetres
Inches
MIN
MIN
A
7
1.10
MAX
0.043
6 5
A1
0.05
0.15
0.002
0.006
B
0.25
0.40
0.010
0.016
C
0.13
0.23
0.005
0.009
D
2.90
3.10
0.114
0.122
e
0.65
BSC
0.0256
BSC
E
2.90
3.10
0.114
0.122
H
4.90
BSC
0.193
BSC
L
0.40
0.70
0.016
0.028
q°
0°
6°
0°
6°
H
E
8
MAX
1
2
3 4
eX6
A
A1
θ°
B
C
L
Conforms to JEDEC MO-187 Iss A
PAD LAYOUT DETAILS
Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)
Fax: (44)161 622 4420
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
Zetex Inc.
47 Mall Drive, Unit 4
Commack NY 11725
USA
Telephone: (516) 543-7100
Fax: (516) 864-7630
Zetex (Asia) Ltd.
3510 Metroplaza, Tower 2
Hing Fong Road,
Kwai Fong, Hong Kong
Telephone:(852) 26100 611
Fax: (852) 24250 494
These are supported by
agents and distributors in
major countries world-wide
Zetex plc 1999
Internet:http://www.zetex.com
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any
purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the
right to alter without notice the specification, design, price or conditions of supply of any product or service.
ISSUE 1 - JUNE 2004
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