SIMPLIFY LINE INTERFACE, REDUCE HIGH LINE DISSIPATION - NEW PRODUCT BRIEF
NEW PRODUCT BRIEF
Package outline Drawings
Line Interface Example:
Reduce high-line input voltage power dissipation versus a power resistor
for line interface, such as with IXYS new IXI858/IXI859 Driver / Regulator ICs.
500V/1000V Depletion-Mode Power MOSFETs
TO-247
HVDCin
D
Q
4
S
R
D
Å0.283
1
2
A
A1
A2
b
b1
b2
C
D
E
e
J
K
L
L1
P
Q
R
S
0.669 [16.99]
‘Normally-On’ Power MOSFETs for Simpler, More Efficient High Voltage Active Loads,
Current Control and Line Interface Applications
K M D B M
ÅP
E
3
L1
C
JANUARY, 2006
Type H
TO-247
Description
L
A1
Type T
TO-268
Depletion-Mode Power MOSFETs operate in a ‘normally-on’ mode, not requiring energy or gate voltage for turn on. The
operating mode, with internal diode and enhanced linear operating capability make them ideal for dynamic loads
applications, current control: current sources and current regulators, and biasing off the high voltage DC line in power
systems.
b
b1
C
b2
e
Type Y
TO-220
Type U
TO-251
M
Type Y
TO-252
C A M
A
This family offers 500V and 1000V, with low and high current options from 100mA to 20A. Package options include surface
mountable D-Pak and D3-Pak options, as well as the leaded TO-251, TO-220 and TO-247.
A
A1
A2
b
b1
b2
c
c1
D
D1
E
E1
e
e1
H
L
L1
L2
L3
L4
Benefits
Applications
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Simplified Control
Enables Linear Control for
High Voltage Applications (500V/1000V)
• Reduce Line Power Dissipation for
High Line Input
L3
3
L
L4
b
e1
e
A2
b1
D1
Features
c
A1
E1
1 - GATE
2 - DRAIN (COLLECTOR)
3 - SOURCE (EMITTER)
4 - DRAIN (COLLECTOR)
4
Current Regulation
Solid-State Relays
Level Shifting
Load Switch
Active Loads
Start-Up Circuits
Power Active Filters
BACK VIEW
A
A1
C2
L2
CISS(TYP)
PD(25˚C)
Re(JC)
Package
IXTY02N50D
IXTU02N50D
IXTP02N50D
IXTH20N50D
IXTT20N50D
IXTY01N100D
IXTU01N100D
IXTP01N100D
IXTH10N100D
IXTT10N100D
500 V
500 V
500 V
500 V
500 V
1000 V
1000 V
1000 V
1000 V
1000 V
0.2 A
0.2 A
0.2 A
20 A
20 A
0.1 A
0.1 A
0.1 A
10 A
10 A
30.0 Ω
30.0 Ω
30.0 Ω
0.33 Ω
0.33 Ω
0.33 Ω
110 Ω
110 Ω
1.40 Ω
1.40 Ω
120 pF
120 pF
120 pF
2500 pF
2500 pF
120 pF
120 pF
120 pF
2500 pF
2500 pF
25 W
25 W
25 W
400 W
400 W
25 W
25 W
25 W
400 W
400 W
5.00 K/W
5.00 K/W
5.00 K/W
0.31 K/W
0.31 K/W
5.00 K/W
5.00 K/W
5.00 K/W
0.31 K/W
0.31 K/W
TO-252
TO-251
TO-220
TO-247
TO-268
TO-252
TO-251
TO-220
TO-247
TO-268
4
D1
D
4
H
3
1
L4
2
L1
b2
e
b
C
0.653 [16.59]
L3
A2
0.531 [13.49]
RDS(on)
0.197 [5.00]
ID(25˚C)
SYM
E1
0.864 [21.95]
VDSS
UVLO
Vreg
VSUP
7
2
C3
220nF
R1
VOUT
µP
13V
4
IN
C1
GND
ChargPReg
75k
6
GATE
5
IXI858 / IXI859
B
MILLIMETERS
MIN
MAX
2.19
2.38
0.89
1.14
0
0.10
0.64
0.89
0.76
1.14
5.21
5.46
0.46
0.58
0.46
0.58
5.97
6.22
4.32
5.21
6.35
6.73
4.32
5.21
2.28 BSC
4.57 BSC
9.40
10.42
0.51
1.02
0.64
1.02
0.60
0.90
1.15
1.52
2.54
2.92
P
E
A
A
D
F
SYM
Q
H1
A
b
b1
c
D
E
e
F
H1
J1
k
L
L1
P
Q
D
1
2
3
L1
C
L
INCHES
MIN
MAX
.170
.190
.025
.040
.045
.065
.014
.022
.580
.630
.390
.420
.100 BSC
.045
.055
.230
.270
.090
.110
0
.015
.500
.550
.110
.230
.139
.161
.100
.125
MILLIMETERS
MIN
MAX
4.32
4.83
0.64
1.02
1.15
1.65
0.35
0.56
14.73
16.00
9.91
10.66
2.54 BSC
1.14
1.40
5.85
6.85
2.29
2.79
0
0.38
12.70
13.97
2.79
5.84
3.53
4.08
2.54
3.18
c
b
e
b1
J1
kMCAS
NOTE: This drawing will meet all dimensions
requirement of JEDEC outline TO-220 AB.
TO-251
E
Part Number
8
Vclamp
C
Vzener
TO-268
Depletion-Mode Power MOSFETs Summary Table
VCAP
1
NOTE: 1. This drawing meets all dimensions
requirement of JEDEC outlines TO-252AA
except L2 dimension.
2. All metal surface are tin plated except
trimmed area.
0.500 [12.70]
‘Normally-On’ Operation
Low RDS(ON) and Fast Switching
Linear Mode Tolerant
Useable Body Diode
Improved Cost Efficiency
2
INCHES
MIN
MAX
.086
.094
.035
.045
0
.004
.025
.035
.030
.045
.205
.215
.018
.023
.018
.023
.235
.245
.170
.205
.250
.265
.170
.205
.090 BSC
.180 BSC
.370
.410
.020
.040
.025
.040
.024
.036
.045
.060
.100
.115
SYM
c1
L2
H
1
VCC
C4
TO-220
D
IXTU01N100D
IXTY01N100D
IXTP01N100D
IXTH10N100D
IXTT10N100D
Rccs
Rbias
L1
NOTE: This drawing will meet all dimensions
requirement of JEDEC outlines TO-247 AD.
4
L1
IXTU02N50D
IXTY02N50D
IXTP02N50D
IXTH20N50D
IXTT20N50D
Depletion
MOSFET
TO-252
E
b2
In high voltage applications, Depletion-Mode Power MOSFETs are ideal for reducing power dissipation. A resistor
normally used in these types of applications experiences dissipation proportional to the square of the input voltage,
reducing efficiency and increasing cost due to the need for high cost power resistors. Depletion-Mode Power MOSFETs
can be used to replace the line interface resistor with a near constant current source, reducing power dissipation, cost
and circuit board area.
MILLIMETERS
MIN
MAX
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.13
2.92
3.12
0.61
0.80
20.80
21.34
15.75
16.13
5.45 BSC
-0.25
-0.64
19.81
20.32
3.81
4.32
3.55
3.65
5.59
6.20
4.32
4.83
6.15 BSC
1 - GATE
2 - DRAIN (COLLECTOR)
3 - SOURCE (EMITTER)
4 - DRAIN (COLLECTOR)
0.552 [14.02]
J
Fabricated using IXYS low on-resistance HDMOS™ process, they provide for simplified control and reduced ëhigh lineí
voltage dissipation when used for line interface in off-line applications. Ideal applications include current regulation,
solid-state relays, level shifting, load switch, active loads, start-up circuits and active power filters. These devices shine
in high energy efficiency applications as a ‘normally-on’ switch, as they do not require energy or voltage for turn-on. With
the high degree of current regulation, these devices can act as active inductors with high dynamic impedance in power
filter applications to limit voltage and current noise and spikes. These unique MOSFETs can also be used as active circuit
protection to limit current flow during an overload or short-circuit.
INCHES
MIN
MAX
.205
.190
.090
.100
.075
.085
.045
.055
.075
.084
.115
.123
.024
.031
.819
.840
.620
.635
.215 BSC
-.010
-.025
.780
.800
.150
.170
.140
.144
.220
.244
.170
.190
.242 BSC
SYM
A
B
A
A2
HVDCou
Blocking Diode
0?-8?
L
0.118 [3.00]
0.215 [5.46]
RECOMMENDED MINIMUM FOOT PRINT FOR SMD
A
A1
A2
b
b2
C
C2
D
.201 D1
E
E1
e
H
L
L1
L2
L3
L4
INCHES
MIN
MAX
.193
.106
.114
.001
.010
.045
.057
.075
.083
.016
.026
.057
.063
.543
.551
.488
.500
.624
.632
.524
.535
.215 BSC
.736
.752
.094
.106
.047
.055
.039
.045
.010 BSC
.150
.161
1 - GATE
2 - DRAIN (COLLECTOR)
3 - SOURCE (EMITTER)
4 - DRAIN (COLLECTOR)
MILLIMETERS
MIN
MAX
4.90
5.10
2.70
2.90
0.02
0.25
1.15
1.45
1.90
2.10
0.40
0.65
1.45
1.60
13.80
14.00
12.40
12.70
15.85
16.05
13.30
13.60
5.45 BSC
19.10
18.70
2.70
2.40
1.20
1.40
1.00
1.15
0.25 BSC
3.80
4.10
A
E
b2
c1
L2
4
D
L1
1
2
L3
3
H
L
b
b1
e
SYM
A
A1
b
b1
b2
c
c1
D
E
e
e1
H
L
L1
L2
L3
INCHES
MIN
MAX
.086
.094
.035
.045
.025
.035
.030
.045
.205
.215
.018
.023
.018
.023
.235
.245
.250
.265
.090 BSC
.180 BSC
.670
.700
.350
.380
.075
.090
.024
.036
.045
.060
MILLIMETERS
MIN
MAX
2.19
2.38
0.89
1.14
0.64
0.89
0.76
1.14
5.21
5.46
0.46
0.58
0.46
0.58
5.97
6.22
6.35
6.73
2.28 BSC
4.57 BSC
17.02
17.78
8.89
9.65
1.91
2.28
0.60
0.90
1.15
1.52
c
A1
e1
1 - GATE
2 - DRAIN (COLLECTOR)
3 - SOURCE (EMITTER)
4 - DRAIN (COLLECTOR)
NOTE: 1. This drawing meets all dimensions
requirement of JEDEC outlines TO-251AA
except L2 dimension.
2. All metal surface are tin plated except
trimmed area.
SIMPLIFY LINE INTERFACE, REDUCE HIGH LINE DISSIPATION - NEW PRODUCT BRIEF
NEW PRODUCT BRIEF
Package outline Drawings
Line Interface Example:
Reduce high-line input voltage power dissipation versus a power resistor
for line interface, such as with IXYS new IXI858/IXI859 Driver / Regulator ICs.
500V/1000V Depletion-Mode Power MOSFETs
TO-247
HVDCin
D
Q
4
S
R
D
Å0.283
1
2
A
A1
A2
b
b1
b2
C
D
E
e
J
K
L
L1
P
Q
R
S
0.669 [16.99]
‘Normally-On’ Power MOSFETs for Simpler, More Efficient High Voltage Active Loads,
Current Control and Line Interface Applications
K M D B M
ÅP
E
3
L1
C
JANUARY, 2006
Type H
TO-247
Description
L
A1
Type T
TO-268
Depletion-Mode Power MOSFETs operate in a ‘normally-on’ mode, not requiring energy or gate voltage for turn on. The
operating mode, with internal diode and enhanced linear operating capability make them ideal for dynamic loads
applications, current control: current sources and current regulators, and biasing off the high voltage DC line in power
systems.
b
b1
C
b2
e
Type Y
TO-220
Type U
TO-251
M
Type Y
TO-252
C A M
A
This family offers 500V and 1000V, with low and high current options from 100mA to 20A. Package options include surface
mountable D-Pak and D3-Pak options, as well as the leaded TO-251, TO-220 and TO-247.
A
A1
A2
b
b1
b2
c
c1
D
D1
E
E1
e
e1
H
L
L1
L2
L3
L4
Benefits
Applications
•
•
•
•
•
•
•
•
•
•
•
•
•
•
Simplified Control
Enables Linear Control for
High Voltage Applications (500V/1000V)
• Reduce Line Power Dissipation for
High Line Input
L3
3
L
L4
b
e1
e
A2
b1
D1
Features
c
A1
E1
1 - GATE
2 - DRAIN (COLLECTOR)
3 - SOURCE (EMITTER)
4 - DRAIN (COLLECTOR)
4
Current Regulation
Solid-State Relays
Level Shifting
Load Switch
Active Loads
Start-Up Circuits
Power Active Filters
BACK VIEW
A
A1
C2
L2
CISS(TYP)
PD(25˚C)
Re(JC)
Package
IXTY02N50D
IXTU02N50D
IXTP02N50D
IXTH20N50D
IXTT20N50D
IXTY01N100D
IXTU01N100D
IXTP01N100D
IXTH10N100D
IXTT10N100D
500 V
500 V
500 V
500 V
500 V
1000 V
1000 V
1000 V
1000 V
1000 V
0.2 A
0.2 A
0.2 A
20 A
20 A
0.1 A
0.1 A
0.1 A
10 A
10 A
30.0 Ω
30.0 Ω
30.0 Ω
0.33 Ω
0.33 Ω
0.33 Ω
110 Ω
110 Ω
1.40 Ω
1.40 Ω
120 pF
120 pF
120 pF
2500 pF
2500 pF
120 pF
120 pF
120 pF
2500 pF
2500 pF
25 W
25 W
25 W
400 W
400 W
25 W
25 W
25 W
400 W
400 W
5.00 K/W
5.00 K/W
5.00 K/W
0.31 K/W
0.31 K/W
5.00 K/W
5.00 K/W
5.00 K/W
0.31 K/W
0.31 K/W
TO-252
TO-251
TO-220
TO-247
TO-268
TO-252
TO-251
TO-220
TO-247
TO-268
4
D1
D
4
H
3
1
L4
2
L1
b2
e
b
C
0.653 [16.59]
L3
A2
0.531 [13.49]
RDS(on)
0.197 [5.00]
ID(25˚C)
SYM
E1
0.864 [21.95]
VDSS
UVLO
Vreg
VSUP
7
2
C3
220nF
R1
VOUT
µP
13V
4
IN
C1
GND
ChargPReg
75k
6
GATE
5
IXI858 / IXI859
B
MILLIMETERS
MIN
MAX
2.19
2.38
0.89
1.14
0
0.10
0.64
0.89
0.76
1.14
5.21
5.46
0.46
0.58
0.46
0.58
5.97
6.22
4.32
5.21
6.35
6.73
4.32
5.21
2.28 BSC
4.57 BSC
9.40
10.42
0.51
1.02
0.64
1.02
0.60
0.90
1.15
1.52
2.54
2.92
P
E
A
A
D
F
SYM
Q
H1
A
b
b1
c
D
E
e
F
H1
J1
k
L
L1
P
Q
D
1
2
3
L1
C
L
INCHES
MIN
MAX
.170
.190
.025
.040
.045
.065
.014
.022
.580
.630
.390
.420
.100 BSC
.045
.055
.230
.270
.090
.110
0
.015
.500
.550
.110
.230
.139
.161
.100
.125
MILLIMETERS
MIN
MAX
4.32
4.83
0.64
1.02
1.15
1.65
0.35
0.56
14.73
16.00
9.91
10.66
2.54 BSC
1.14
1.40
5.85
6.85
2.29
2.79
0
0.38
12.70
13.97
2.79
5.84
3.53
4.08
2.54
3.18
c
b
e
b1
J1
kMCAS
NOTE: This drawing will meet all dimensions
requirement of JEDEC outline TO-220 AB.
TO-251
E
Part Number
8
Vclamp
C
Vzener
TO-268
Depletion-Mode Power MOSFETs Summary Table
VCAP
1
NOTE: 1. This drawing meets all dimensions
requirement of JEDEC outlines TO-252AA
except L2 dimension.
2. All metal surface are tin plated except
trimmed area.
0.500 [12.70]
‘Normally-On’ Operation
Low RDS(ON) and Fast Switching
Linear Mode Tolerant
Useable Body Diode
Improved Cost Efficiency
2
INCHES
MIN
MAX
.086
.094
.035
.045
0
.004
.025
.035
.030
.045
.205
.215
.018
.023
.018
.023
.235
.245
.170
.205
.250
.265
.170
.205
.090 BSC
.180 BSC
.370
.410
.020
.040
.025
.040
.024
.036
.045
.060
.100
.115
SYM
c1
L2
H
1
VCC
C4
TO-220
D
IXTU01N100D
IXTY01N100D
IXTP01N100D
IXTH10N100D
IXTT10N100D
Rccs
Rbias
L1
NOTE: This drawing will meet all dimensions
requirement of JEDEC outlines TO-247 AD.
4
L1
IXTU02N50D
IXTY02N50D
IXTP02N50D
IXTH20N50D
IXTT20N50D
Depletion
MOSFET
TO-252
E
b2
In high voltage applications, Depletion-Mode Power MOSFETs are ideal for reducing power dissipation. A resistor
normally used in these types of applications experiences dissipation proportional to the square of the input voltage,
reducing efficiency and increasing cost due to the need for high cost power resistors. Depletion-Mode Power MOSFETs
can be used to replace the line interface resistor with a near constant current source, reducing power dissipation, cost
and circuit board area.
MILLIMETERS
MIN
MAX
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.13
2.92
3.12
0.61
0.80
20.80
21.34
15.75
16.13
5.45 BSC
-0.25
-0.64
19.81
20.32
3.81
4.32
3.55
3.65
5.59
6.20
4.32
4.83
6.15 BSC
1 - GATE
2 - DRAIN (COLLECTOR)
3 - SOURCE (EMITTER)
4 - DRAIN (COLLECTOR)
0.552 [14.02]
J
Fabricated using IXYS low on-resistance HDMOS™ process, they provide for simplified control and reduced ëhigh lineí
voltage dissipation when used for line interface in off-line applications. Ideal applications include current regulation,
solid-state relays, level shifting, load switch, active loads, start-up circuits and active power filters. These devices shine
in high energy efficiency applications as a ‘normally-on’ switch, as they do not require energy or voltage for turn-on. With
the high degree of current regulation, these devices can act as active inductors with high dynamic impedance in power
filter applications to limit voltage and current noise and spikes. These unique MOSFETs can also be used as active circuit
protection to limit current flow during an overload or short-circuit.
INCHES
MIN
MAX
.205
.190
.090
.100
.075
.085
.045
.055
.075
.084
.115
.123
.024
.031
.819
.840
.620
.635
.215 BSC
-.010
-.025
.780
.800
.150
.170
.140
.144
.220
.244
.170
.190
.242 BSC
SYM
A
B
A
A2
HVDCou
Blocking Diode
0?-8?
L
0.118 [3.00]
0.215 [5.46]
RECOMMENDED MINIMUM FOOT PRINT FOR SMD
A
A1
A2
b
b2
C
C2
D
.201 D1
E
E1
e
H
L
L1
L2
L3
L4
INCHES
MIN
MAX
.193
.106
.114
.001
.010
.045
.057
.075
.083
.016
.026
.057
.063
.543
.551
.488
.500
.624
.632
.524
.535
.215 BSC
.736
.752
.094
.106
.047
.055
.039
.045
.010 BSC
.150
.161
1 - GATE
2 - DRAIN (COLLECTOR)
3 - SOURCE (EMITTER)
4 - DRAIN (COLLECTOR)
MILLIMETERS
MIN
MAX
4.90
5.10
2.70
2.90
0.02
0.25
1.15
1.45
1.90
2.10
0.40
0.65
1.45
1.60
13.80
14.00
12.40
12.70
15.85
16.05
13.30
13.60
5.45 BSC
19.10
18.70
2.70
2.40
1.20
1.40
1.00
1.15
0.25 BSC
3.80
4.10
A
E
b2
c1
L2
4
D
L1
1
2
L3
3
H
L
b
b1
e
SYM
A
A1
b
b1
b2
c
c1
D
E
e
e1
H
L
L1
L2
L3
INCHES
MIN
MAX
.086
.094
.035
.045
.025
.035
.030
.045
.205
.215
.018
.023
.018
.023
.235
.245
.250
.265
.090 BSC
.180 BSC
.670
.700
.350
.380
.075
.090
.024
.036
.045
.060
MILLIMETERS
MIN
MAX
2.19
2.38
0.89
1.14
0.64
0.89
0.76
1.14
5.21
5.46
0.46
0.58
0.46
0.58
5.97
6.22
6.35
6.73
2.28 BSC
4.57 BSC
17.02
17.78
8.89
9.65
1.91
2.28
0.60
0.90
1.15
1.52
c
A1
e1
1 - GATE
2 - DRAIN (COLLECTOR)
3 - SOURCE (EMITTER)
4 - DRAIN (COLLECTOR)
NOTE: 1. This drawing meets all dimensions
requirement of JEDEC outlines TO-251AA
except L2 dimension.
2. All metal surface are tin plated except
trimmed area.