APTM100TA35SCTPG
APTM100TA35SCPG
Triple phase leg
MOSFET Power Module
VDSS = 1000V
RDSon = 350mΩ typ @ Tj = 25°C
ID = 22A @ Tc = 25°C
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
SiC Parallel Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
•
•
Kelvin source for easy drive
Very low stray inductance
- Symmetrical design
- Lead frames for power connections
High level of integration
Internal thermistor for temperature monitoring
•
•
VBUS 1
VBUS 2
NTC1
NTC2
G1
0/VBUS 1
U
S1
VBUS 3
G3
0/VBUS 2
S3
G5
0/VBUS 3
S5
S2
S4
S6
G2
G4
G6
V
W
Pins NTC1 & NTC2 are only mounted on
APTM100TA35SCTPG power module.
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Very low (12mm) profile
• Each leg can be easily paralleled to achieve a phase
leg of three times the current capability
• Module can be configured as a three phase bridge
• RoHS Compliant
All ratings @ Tj = 25°C unless otherwise specified
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–
APTM100TA35SC(T)PG– Rev 2
•
November, 2013
Features
• Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
APTM100TA35SCTPG
APTM100TA35SCPG
Absolute maximum ratings (Per MOSFET)
Symbol
VDSS
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Max ratings
1000
22
17
88
±30
420
390
25
50
3000
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Unit
V
A
V
mΩ
W
A
mJ
Electrical Characteristics (Per MOSFET)
Symbol Characteristic
IDSS
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Test Conditions
Min
VGS = 0V,VDS = 1000V
Tj = 25°C
VGS = 0V,VDS = 800V
Tj = 125°C
VGS = 10V, ID = 11A
VGS = VDS, ID = 2.5mA
VGS = ±30V, VDS = 0V
Typ
350
3
Max
100
500
420
5
±100
Unit
Max
Unit
µA
mΩ
V
nA
Dynamic Characteristics (Per MOSFET)
Qg
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Rise Time
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
RthJC
Junction to Case Thermal Resistance
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
VGS = 10V
VBus = 500V
ID = 22A
Inductive switching @ 125°C
VGS = 15V
VBus = 670V
ID = 22A
RG = 5Ω
Inductive switching @ 25°C
VGS = 15V, VBus = 670V
ID = 22A, RG = 5Ω
Inductive switching @ 125°C
VGS = 15V, VBus = 670V
ID = 22A, RG = 5Ω
Min
Typ
5.2
0.88
0.16
nF
186
24
nC
122
18
12
ns
155
40
540
µJ
623
854
µJ
779
0.32
www.microsemi.com
November, 2013
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
°C/W
2–
APTM100TA35SC(T)PG– Rev 2
Symbol
Ciss
Coss
Crss
APTM100TA35SCTPG
APTM100TA35SCPG
Series diode ratings and characteristics (per diode)
Symbol
VRRM
IRM
IF
VF
Characteristic
Test Conditions
Maximum Repetitive Reverse Voltage
Maximum Reverse Leakage Current VR=1000V
DC Forward Current
IF = 30A
IF = 60A
Diode Forward Voltage
IF = 30A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
RthJC
IF = 30A
VR = 667V
di/dt = 200A/µs
Min
1000
Typ
Max
250
Tj = 125°C
30
1.9
2.2
1.7
Tj = 25°C
290
Tj = 125°C
Tj = 25°C
Tj = 125°C
390
670
2350
Tc = 80°C
Unit
V
µA
A
2.3
V
ns
nC
Junction to Case Thermal Resistance
1.2
°C/W
SiC Parallel diode ratings and characteristics (per SiC diode)
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
IRM
IF
Maximum Reverse Leakage Current
VR=1200V
DC Forward Current
VF
Diode Forward Voltage
QC
Total Capacitive Charge
C
Total Capacitance
RthJC
Test Conditions
Min
1200
Tj = 25°C
Tj = 175°C
Tc = 125°C
Tj = 25°C
IF = 20A
Tj = 175°C
IF = 20A, VR = 600V
di/dt =1000A/µs
Typ
Max
64
112
20
1.6
2.3
400
2000
192
f = 1MHz, VR = 400V
138
µA
A
1.8
3
80
f = 1MHz, VR = 200V
Unit
V
V
nC
pF
Junction to Case Thermal Resistance
1
°C/W
Thermal and package characteristics
www.microsemi.com
Min
4000
-40
-40
-40
-40
3
Max
150
TJmax -25
125
100
5
250
Unit
V
°C
N.m
g
November, 2013
Characteristic
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz
Operating junction temperature range
Recommended junction temperature under switching conditions
Storage Temperature Range
Operating Case Temperature
Mounting torque
To heatsink
M6
Package Weight
3–
APTM100TA35SC(T)PG– Rev 2
Symbol
VISOL
TJ
TJOP
TSTG
TC
Torque
Wt
APTM100TA35SCTPG
APTM100TA35SCPG
Temperature sensor NTC (see application note APT0406 on www.microsemi.com).
Pins NTC1 & NTC2 are only mounted on APTM100TA35SCTPG power module.
Symbol
R25
∆R25/R25
B25/85
∆B/B
Characteristic
Resistance @ 25°C
Min
T25 = 298.15 K
TC=100°C
RT =
R25
⎡
⎛ 1
1 ⎞⎤
exp ⎢ B25 / 85 ⎜⎜
− ⎟⎟⎥
⎝ T25 T ⎠⎦
⎣
Typ
50
5
3952
4
Max
Unit
kΩ
%
K
%
T: Thermistor temperature
RT: Thermistor value at T
SP6-P Package outline (dimensions in mm)
Pins NTC1 & NTC2 are only mounted on APTM100TA35SCTPG power module.
9 places (3:1)
See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com
www.microsemi.com
4–
APTM100TA35SC(T)PG– Rev 2
November, 2013
ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS :
APTM100TA35SCTPG
APTM100TA35SCPG
Typical MOSFET Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.35
0.3
0.9
0.25
0.7
0.2
0.5
0.15
0.3
0.1
0.1
0.05
0.05
0
0.00001
Single Pulse
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
80
7V
40
6.5V
30
6V
20
5.5V
0
5
10
15
20
25
50
40
30
TJ=25°C
20
10
5V
0
60
TJ=125°C
0
30
0
1.2
VGS=10V
1.1
VGS=20V
1
3
4
5
6
7
8
9
25
Normalized to
VGS=10V @ 11A
1.3
2
DC Drain Current vs Case Temperature
RDS(on) vs Drain Current
1.4
1
VGS, Gate to Source Voltage (V)
ID, DC Drain Current (A)
RDS(on) Drain to Source ON Resistance
VDS, Drain to Source Voltage (V)
0.9
20
15
10
0.8
5
November, 2013
10
VDS > ID(on)xRDS(on)MAX
250µs pulse test @ < 0.5 duty cycle
70
0
0
10
20
30
40
50
60
ID, Drain Current (A)
25
50
75
100
125
150
TC, Case Temperature (°C)
www.microsemi.com
5–
APTM100TA35SC(T)PG– Rev 2
VGS=15, 10&8V
50
ID, Drain Current (A)
ID, Drain Current (A)
60
1.10
1.05
1.00
0.95
25
50
75
100
125
150
ON resistance vs Temperature
2.5
2.0
1.5
1.0
25
Threshold Voltage vs Temperature
75
100
125
150
Maximum Safe Operating Area
100
1.0
100µs
limited by RDSon
ID, Drain Current (A)
0.9
0.8
0.7
0.6
1ms
10
Single pulse
TJ=150°C
TC=25°C
10ms
1
25
50
75
100
125
TC, Case Temperature (°C)
150
1
Capacitance vs Drain to Source Voltage
10000
Ciss
Coss
1000
Crss
100
0
10
20
30
40
Gate Charge vs Gate to Source Voltage
VGS, Gate to Source Voltage (V)
100000
10
100
1000
VDS, Drain to Source Voltage (V)
50
VDS, Drain to Source Voltage (V)
14
ID=22A
TJ=25°C
12
VDS=200V
VDS=500V
10
VDS=800V
8
6
4
2
0
0
50
100
150
200
November, 2013
VGS(TH), Threshold Voltage
(Normalized)
50
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
C, Capacitance (pF)
VGS=10V
ID=11A
250
Gate Charge (nC)
www.microsemi.com
6–
APTM100TA35SC(T)PG– Rev 2
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.15
RDS(on), Drain to Source ON resistance
(Normalized)
APTM100TA35SCTPG
APTM100TA35SCPG
APTM100TA35SCTPG
APTM100TA35SCPG
Delay Times vs Current
Rise and Fall times vs Current
80
180
td(off)
VDS=670V
RG=5Ω
TJ=125°C
L=100µH
70
140
60
120
tr and tf (ns)
VDS=670V
RG=5Ω
TJ=125°C
L=100µH
100
80
60
40
50
40
tr
30
20
td(on)
10
20
0
0
0
10
20
30
40
50
0
10
ID, Drain Current (A)
50
3
2
VDS=670V
RG=5Ω
TJ=125°C
L=100µH
1.5
1
Eoff
Switching Energy (mJ)
Eon
Eon
0.5
VDS=670V
ID=22A
TJ=125°C
L=100µH
2.5
2
Eoff
1.5
1
Eon
0.5
0
0
0
10
20
30
40
50
0
ID, Drain Current (A)
5
10
15
20
25
30
35
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
Source to Drain Diode Forward Voltage
1000
IDR, Reverse Drain Current (A)
250
200
150
VDS=670V
D=50%
RG=5Ω
TJ=125°C
TC=75°C
100
50
ZVS
Hard
switching
100
TJ=150°C
0
5
8
10
13
15
18
ID, Drain Current (A)
TJ=25°C
10
20
1
0.2 0.4 0.6 0.8
1
November, 2013
Switching Energy (mJ)
20
30
40
ID, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
Frequency (kHz)
tf
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
www.microsemi.com
7–
APTM100TA35SC(T)PG– Rev 2
td(on) and td(off) (ns)
160
APTM100TA35SCTPG
APTM100TA35SCPG
Typical series diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
1.4
1.2
0.9
1
0.7
0.8
0.5
0.6
0.3
0.4
0.1
0.05
0.2
Single Pulse
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Forward Current vs Forward Voltage
trr, Reverse Recovery Time (ns)
IF, Forward Current (A)
Trr vs. Current Rate of Charge
60
60
50
40
30
TJ=125°C
20
TJ=25°C
10
0
0.0
0.3
0.5
0.8
1.0
1.3
TJ=125°C
VR=133V
50
40
60 A
30 A
30
15 A
20
10
0
1.5
0
200
TJ=125°C
VR=133V
375
60 A
30 A
15 A
250
125
0
0
200
400
600
800 1000 1200
IRRM, Reverse Recovery Current (A)
QRR, Reverse Recovery Charge (nC)
QRR vs. Current Rate Charge
500
400
600
800
1000 1200
-diF/dt (A/µs)
VF, Anode to Cathode Voltage (V)
IRRM vs. Current Rate of Charge
20
TJ=125°C
VR=133V
15
30 A
60 A
15 A
10
5
0
-diF/dt (A/µs)
0
200
400
600
800
1000 1200
-diF/dt (A/µs)
Capacitance vs. Reverse Voltage
November, 2013
500
400
300
200
100
0
1
10
100
1000
VR, Reverse Voltage (V)
www.microsemi.com
8–
APTM100TA35SC(T)PG– Rev 2
C, Capacitance (pF)
600
APTM100TA35SCTPG
APTM100TA35SCPG
Typical SiC parallel diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
1.2
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.1
0.2
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Reverse Characteristics
Forward Characteristics
40
200
30
TJ=75°C
20
TJ=125°C
10
TJ=175°C
IR Reverse Current (µA)
IF Forward Current (A)
TJ=25°C
0
0
0.5
1
1.5
2
2.5
3
3.5
VF Forward Voltage (V)
150
100
TJ=75°C
TJ=125°C
50
TJ=175°C
0
400
600
TJ=25°C
800 1000 1200 1400 1600
VR Reverse Voltage (V)
Capacitance vs.Reverse Voltage
1200
1000
800
600
400
November, 2013
200
0
1
10
100
VR Reverse Voltage
1000
www.microsemi.com
9–
APTM100TA35SC(T)PG– Rev 2
C, Capacitance (pF)
1400
APTM100TA35SCTPG
APTM100TA35SCPG
DISCLAIMER
The information contained in the document (unless it is publicly available on the Web without access restrictions) is
PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted,
transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the
recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement
will also apply. This document and the information contained herein may not be modified, by any person other than
authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property
right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication,
inducement, estoppels or otherwise. Any license under such intellectual property rights must be approved by
Microsemi in writing signed by an officer of Microsemi.
Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime
without any notice. This product has been subject to limited testing and should not be used in conjunction with lifesupport or other mission-critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi
disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including liability or
warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other
intellectual property right. Any performance specifications believed to be reliable but are not verified and customer or
user must conduct and complete all performance and other testing of this product as well as any user or customers final
application. User or customer shall not rely on any data and performance specifications or parameters provided by
Microsemi. It is the customer’s and user’s responsibility to independently determine suitability of any Microsemi
product and to test and verify the same. The information contained herein is provided “AS IS, WHERE IS” and with all
faults, and the entire risk associated with such information is entirely with the User. Microsemi specifically disclaims
any liability of any kind including for consequential, incidental and punitive damages as well as lost profit. The product
is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp
www.microsemi.com
10 –
APTM100TA35SC(T)PG– Rev 2
Buyer must notify Seller in writing before using Seller’s Products in Life Support Applications. Seller will study with
Buyer alternative solutions to meet Buyer application specification based on Sellers sales conditions applicable for the
new proposed specific part.
November, 2013
Life Support Application
Seller's Products are not designed, intended, or authorized for use as components in systems intended for space,
aviation, surgical implant into the body, in other applications intended to support or sustain life, or for any other
application in which the failure of the Seller's Product could create a situation where personal injury, death or property
damage or loss may occur (collectively "Life Support Applications").
Buyer agrees not to use Products in any Life Support Applications and to the extent it does it shall conduct extensive
testing of the Product in such applications and further agrees to indemnify and hold Seller, and its officers, employees,
subsidiaries, affiliates, agents, sales representatives and distributors harmless against all claims, costs, damages and
expenses, and attorneys' fees and costs arising, directly or directly, out of any claims of personal injury, death, damage
or otherwise associated with the use of the goods in Life Support Applications, even if such claim includes allegations
that Seller was negligent regarding the design or manufacture of the goods.