TND310
TND310
ON
ONSemiconductor
Semiconductor
Device
DeviceNomenclature
Nomenclature
Prepared
Prepared
by: by:
Steve
Steve
West
West
ON ON
Semiconductor
Semiconductor
www.onsemi.com
http://onsemi.com
http://onsemi.com
REFERENCE
REFERENCE
MANUAL
MANUAL
convention.
They
They
consist
consist
of of
many
many
industry
industry
standard
standard
Whenever
Whenever
possible,
possible,
ON ON
Semiconductor
usesuses
the following
the following
This
document
contains
theSemiconductor
device nomenclature
breakdownconvention.
The ESD/TVS,
small
signal
diode
and
transistor,
and thyristor
nomenclatures,
along
with
several
several
market
market
targeted
targeted
naming
naming They
numbering
numbering
systems
systems
the
in part
naming
the naming
of their
ofdecoder,
their
products.
products.
(also
referred
to
asinthe
number
product namingnomenclatures,
portfolios along
have
no with
single
standard
naming
convention.
conventions.
Formany
For
anyany
questions,
questions,
please
please
contact
contact
youryour
locallocal
TheThe
ESD/TVS,
ESD/TVS,
small
signal
signal
diode
diode
and
and
transistor,
transistor,
andand conventions.
convention,
or partsmall
naming
convention)
for
ON Semiconductor
consist of
industry
standard
nomenclatures,
along with
Semiconductor
Semiconductor
sales
representative.
representative.
thyristor
thyristor
portfolios
portfolios
havehave
nopossible,
no
single
single
standard
standard
naming
naming
orderable
devices.
Whenever
ON Semiconductor
usesONON
several
market sales
targeted
naming conventions. For any questions,
these numbering systems in the naming of their products.
please contact your local ON Semiconductor sales representative.
Historical
Historical
Nomenclature
Nomenclature
Notes
Notes
Current
Current
Nomenclature
Nomenclature
Notes
Notes
During
During
its history,
its history,
ONON
Semiconductor
Semiconductor
has has
beenbeen
partpart
of of Analog
Analog
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2. . 2
another
another
company,
company,
andand
has has
acquired
acquired
other
other
companies
companies
andand
CMOS
CMOS
Logic
Logic
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3. . 3
Historical
Nomenclature
Notes
Current
Nomenclatures
product
product
lines.
lines.
In In
order
order
to to
maintain
maintain
consistency
consistency
for for
Analog
Switch
Switch
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3. . 3
During
its history,
ON
Semiconductor
has not
been
part of another
company,Analog
customers,
customers,
partpart
numbers
numbers
havehave
not
changed,
changed,
wherever
wherever
Analog . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2
and
has
acquired
other
companies
and
product
lines.
In
order
to
maintain
possible.
possible.
TheThe
following
following
prefixes
prefixes
maymay
indicate
indicate
the the
original
original Clock
Clock
andand
Data
Data
Management
Management
. . . . . . . . . . . . . . . . . . . . . . .4. 4
CMOS
Logic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3
consistency
for customers, part numbers have not changed, wherever
manufacturer:
manufacturer:
AnalogSolutions
Switch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3
Integrated
Integrated
Solutions
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6. . 6
possible. The following prefixes may indicate the original manufacturer:
ADxADx− Analog
− Analog
Devices,
Devices,
Inc.Inc.
Clock
and. Data
4
MOS
MOS
Power
Power
. . . . Management . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7. . 7
Ax
– Aptina Imaging Corporation
Integrated Solutions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
AMIS
AMIS
– AMI
– AMI
Semiconductor
Semiconductor
Power
Power
MOSFETs
MOSFETs
− SO−8
− SO−8
(MiniMOS
(MiniMOS
), ),
MOS, Power . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7
AX
Axsem
AG
ASM
ASM
–– PulseCore
– PulseCore
Micro8
Micro8
SOT−223,
, SOT−223,
and and
TSOP−6
TSOP−6
. . . . . . . . . . . . . . . . . .8. 8
Power MOSFETs − SO−8 (MiniMOS),
ADx
Analog
Devices,
Inc.
CAT
CAT
–– Catalyst
– Catalyst
Semiconductor
Semiconductor
Bipolar
Bipolar
Power
Power
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9. . 9
Micro8, SOT−223, and TSOP−6 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
CS
CS –– Cherry
– Cherry
Semiconductor
Semiconductor
Rectifiers
Rectifiers
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11. . 11
AMIS
AMI
Semiconductor
Bipolar. Power . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
9
MC
MC
–
Motorola
–
Motorola
FMO
FMO
Bump
Bump
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
. . 12
ASM –PulseCore
Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
Ambient
Ambient
Light
Sensors
Sensors
. . . . . . . . . . . . . . . . . . . . . . . . . .12
. 12
Kxx
Kxx–– Truesense
– Truesense
Imaging,
Imaging,
Inc.Inc.
FMOLight
Bump . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12
CAT
Catalyst
Semiconductor
LED/Lighting
Products . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12
Contact
Contact
Image
Image
Sensors
Sensors
& Modules
& Modules
. . . . . . . . . . . . . . . . .13
. 13
CS – Cherry Semiconductor
I2C
Serial
EEPROMs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
13
Photo
Photo
Diode
Diode
Arrays
Arrays
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
. . 14
Kxx – Truesense Imaging, Inc.
SPI Serial EEPROMs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
LED/Lighting
LED/Lighting
Products
Products
. . . . . . . . . . . . . . . . . . . . . . . . . .14. 14
Microwire Serial EEPROMs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
MC –Motorola
2
2
C Serial
EEPROMs
EEPROMs
. . .Products
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . 15
. . 15
I C ISerial
Low
Drop
Out (LDO)
14
NOI – Cypress Semiconductor
SPISPI
Serial
Serial
EEPROMs
EEPROMs
. . . . . . . . . . . . . . . . . . . . . . . . . . 15
. . 15
Supervisor
Products. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
15
Microwire
Microwire
Serial
Serial
EEPROMs
EEPROMs
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
16
.
16
Charge Pumps, LED Drivers and I/O Bus Products . . . . . . . . . . . . . . . 15
Digitally
Potentiometer
LowLow
Drop
Drop
OutProgrammable
Out
(LDO)
(LDO)
Products
Products
. . . . . . .and
. . . . . . . . . . . . .16
. 16
Supervisor with Memory Products . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Supervisor
Supervisor
Products
Products
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
. . 17
ASIC Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Charge
Charge
Pumps,
Pumps,
LED
LED
Drivers
Drivers
andand
I/O I/O
BusBus
Products
Products
. . .17
. 17
Ambient
Light
Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
18
Digitally
Digitally
Programmable
Programmable
Potentiometer
Potentiometer
and
and
Photo Diode Arrays . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Supervisor
Supervisor
withwith
Memory
Memory
Products
. . . . . . . . . . . . . . .18
. 18
Contact
Image
Sensors
& Products
Modules . . . . . . . . . . . . . . . . . . . . . . . . . . . .
19
ASIC
ASIC
Devices
Devices
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
. . 19
Image
Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
20
Tunable
Components
25
Image
Image
Sensors
Sensors
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . 20
. . 20
RF Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
IPM, DS and iPS Devices . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
© Semiconduct
Components
Industries
© Semiconductor
© Semiconductor
Components
Components
Industries,
Industries,
LLC, LLC,
2014
LLC, 2016
2014
Sep,
2016
––Rev.
August,
August,
2014
2014
– Rev.
Rev.
12 19
12
1
1 1
Publication
Order
Number:
Publication
Publication
Order
Order
Number:
Number:
TND310/D
TND310/D
TND310/D
TND310
TND310
Naming Convention for Analog Devices
ROOT
N C
Product Class
• N = Standard
• S = Special/Custom
• X = Pilot Production
• P = Engineering Prototypes
Product Group
• C = Analog Integrated Circuits
Product Family/Performance Index
• L = Lighting
• N = Advanced Interface
• P = Power Management
• S = Signal
• T = Thermal Management
• V = Vehicular (Automotive)
P
1
2 3
4 A D 3
Stem Number
Assigned by
Marketing
(2 to 6 alpha/
numeric digits)
Temp Range/Output Type
Designator Assigned by Marketing
Ex:
• A = Enhanced
• X = Extended
http://onsemi.com
www.onsemi.com
2
0
R G
Pb−Free Designator
• G = Lead−Free
Options
Voltage,
frequency, etc.
Free form in
pick list
Tape/Reel Designator
Package Designator
• C = CHIP
• D = SOIC Narrow Body
• DA = TSSOP with 0.5 mm lead pitch
• DB = TSSOP with 0.65 mm lead pitch
• DM = Micro
• DS = D2PAK
• DT = DPAK
• DW = SOIC Wide Body
• F = PowerFLEX
• FB = TQFP
• FC = bump Flip−Chip
• FN = PLCC
• FT = LQFT
• H = Flip−Chip
• MN = QFN/DFN/LLGA >0.8 mm thick
• MT = QFN/DFN/LLGA 0.6 to 0.8 mm thick
• MU = QFN/DFN/LLGA <0.6 mm thick
• P = DIP−8, −14, −16, etc.
• PD = Thermally enhanced with exposed
PAD SOIC Narrow Body
• PL = DIP−8, −14, −16, GullWing, etc.
• PP = PSOP
• PW = Thermally enhanced with exposed
PAD SOIC Wide Body
• SA = SON (pkg code 7040)
• SL = Leadless
• SN = SC59 Multi−Lead, SOT23, and
TSOP−4, −5, −6
• SQ = SC70−4/5/6, SC82AB Package
• SP = SPAK
• ST = SOT223
• T = TO220−3, −5, −7 − Straight Lead
• TH = TO220 Horizontal Lead Form
• TV = TO220 Vertical Lead Form
• W = Wafer
TND310
TND310
Naming Convention for CMOS Logic Family Devices
MC 74 VHCT XX 244A DW R2 G
Circuit Identifier
• MC = Motorola
• NL = ON Semiconductor
Pb−Free Designator
• G = Lead−Free
Tape/Reel Designator
Family Type
• 74 = 74 Series (−55 to +125°C)
• AS = Analog Switches
• SF = Special Function
• 17 = Single Gate
• 27 = Dual Gate
• 37 = Triple Gate
CMOS Specification Identifier
• AC = Advance CMOS
• ACT = Advance CMOS TTL
Compatible
• HC = Buffered High Speed CMOS
• HCT = High Speed CMOS TTL
Compatible
• HCU = Unbuffered High Speed CMOS
• LCX = Low Voltage CMOS
• LVX = Low Voltage CMOS
• VCX = High Speed, Low Voltage
CMOS
• VHC = Advance High Speed CMOS
• VHCT = VHC TTL Compatible
• SV = Ultra Low Voltage Single Gate
(VCX)
• SZ = Single Gate LCX
• WZ = Double/Triple Gate LCX
Function Type
• 00
• 04
• 244
Special Feature
• Blank = No Specific Feature
• H = Bus Hold
• 1G = Single Gate
• 1GT = Single Gate TTL
Compatible
Package Type
• P or N for PDIP
• D for 150 mil SOIC
• DF for SOT
• DT for TSSOP
• DW for 300 mil Plastic SOIC
• M or F for 200 mil EIAJ
SOIC
• MN for QFN/DFN/LLGA
>0.8 mm thick
• MT for QFN/DFN/LLGA 0.6
to 0.8 mm thick
• MU for QFN/DFN/LLGA
<0.6 mm thick
• FCT for Flip−Chip
Naming Convention for Analog Switch Devices
NLAS 5 2 2 3 0
Application Type
• 5 = Audio
• 7 = Multimedia/USB/Data
• 9 = General Purpose
Flexible
(Could be used for bandwidth
or other parameters) Will not be
present unless needed.
Channel Number
• 1, 2, 3, 4, 8...
Function Number
• 1 = SPST
• 2 = SPDT
• 3 = DPDT
• 4 = 4:1 Multiplexer
• 8 = 8:1 Multiplexer
http://onsemi.com
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3
Ron Range
• 0: Ron<1001000 • 1: Ron<10100 • 2: Ron<110 • 3: Ron<10.5 TND310
Naming Convention for Clock and Data Management Devices
N B X Y 123456 V D R2 G
Product Class
• N = Standard
• S = Special/Custom
• X = Pilot Production
• P = Engineering Prototypes
• M = HFPD spinoff from existing ECL families
123456 =
• Part Number
Code
• (Up to 6
Numbers)
Product Group
• B = Clock Management
• BA = Automotive
X = Performance Index Code
• 3 = CMOS
• 4 = M5 Performance (3 GHz buffer, 800 MHz
synthesizer, 1.3 GHz counter)
• 6 = Slowed down SiGe or M5 Special
Performance (6 GHz buffer fmax)
• 7 = SiGe Performance (12 GHz buffer fmax)
Y = Lowest Nominal VCC Code
• U = 1.2 – 1.5 V Core
• V = 1.8 V Core
• L = 2.5 V Core
• N = 3.3 V Core
• R = 5.0 V Core
• F = 2.5 V Core, 1.5 V Output
• H = 2.5 V Core, 1.8 V Output
• W = 3.3 V Core, 1.0 V Output
• G = 3.3 V Core, 1.8 V Output
• M = 3.3 V Core, 2.5 V Output
Pb−Free Designator
• G = Lead−Free
Tape/Reel Designator
Package Suffix
• D = SOIC 8/14/16
• DW = Wide Body SOIC 16/20/24
• DT = TSSOP 8/14/16/20/24/28
• M/F = SOIC EIAJ 8/14/16/20
• FA = LQFP 32/52/64
• FN = PLCC 20/28
• MN = QFN/DFN/LLGA
8/16/20/24/28/32/48/52 >0.8 mm thick
• MT = QFN/DFN/LLGA
8/16/20/24/28/32/48/52 0.6 to 0.8 mm
thick
• MU = QFN/DFN/LLGA
8/16/20/24/28/32/48/52 <0.6 mm thick
• BA = FCBGA 16/49
• P = Plastic DIP 8/14/16/20/24
• L = Ceramic DIP 8/14/16/20/24
V = Output Type Code
No letter is ECL
• A = OLD
• C = CMOS
• G = Multi Standard
• H = HSTL
• K = HCSL
• L = Low Power HSCL
• M = CML
• R = Reduced Swing ECL
• S = LVDS
• V = Variable Swing
Possible Device Prefixes
MC
MCH
MCK
MCW (Prescaler & Wafer Sales)
MCWh
MCWK
NBC
NBSG
SB
SC
NBSX (Mixed Signal)
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4
TND310
Naming Convention for Crystal Oscillator Devices
N BY Y Z Z
XXX LN 1TA G
ON Designator
Pb−Free Designator
• G = Lead−Free
Family Designator
• BX = XO
• BV = VCXO
• BT = TCXO
Tape/Reel Designator
Package Code
• CLCC−6 Ceramic Module
Number of Frequency
• H or S = Single
• T = Triple
• D = Dual
• Q = Quad
Device Function
(Root Part Number)
Supply Voltage / Output Signal
• A = 3.3 V / CMOS
• B = 3.3 V / LVPECL
• C = 3.3 V / LVDS
• D = 3.3 V / CML
• E = 3.3 V / HCSL
• F = 2.5 V / CMOS
• G = 2.5 V / LVPECL
• H = 2.5 V / LVDS
• J = 2.5 V / CML
• K = 2.5 V / HCSL
• M = 1.8 V / CMOS
• N = 1.8 V / CML
• P = 2.5 V/3.3 V / LVDS
Frequency Stability
• A = 50 ppm
• B = 20 ppm
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5
TND310
TND310
Naming Convention for Integrated Solutions Devices
N U D
3
1 3 4 X6 T1 G
Pb−Free Designator
• G = Lead−Free
Product Class
• N = Standard
• S = Special/Custom
• X = Pilot Production
• P = Engineering Prototypes
Tape/Reel Designator
Package Designator
• V = 24 Pin MLF
• H = ChipFET
• B = D2PAK
• C = DPAK
• − Die T & R
• FC = Flip−Chip
• K = Micro8
• U = MicroLeadless
• QP = PLLP
• SN = POWERMITE®
• MN = QFN/DFN: >0.8 mm thick
• MT = QFN/DFN: 0.6 to 0.8 mm thick
• MU = QFN/DFN: <0.6 mm thick
• P5 = SOT953
• P6 = SOT963
• WT = SC70
• T = SC75/SC89
• W1 = SC88
• W5 = SC88A
• A = SMA
• S = SMC
• D = SOIC
• Z = SOT223
• L = SOT23
• XV5 = SOT553
• XV6 = SOT563
• E = SPAK
• M5 = TSOP5
• M = TSOP6/SC74
Product Group
• U = MicroIntegration
• I = Smart
Product Family
• D = Driver
• F = Filter
• P = Protection
• S = Special Function
Descriptor 1
Product Family Description
Symbol
Drivers
Legacy
3
LED
4
Filters
# of Filters
1−9
Protection # of Protected Lines
1−9
SpecFunct/Customer Special Part No 0−9
Descriptor 2
Product Family Description
Driver
Function Type
Filter
Part Number
Protection Line Type
Protection Line Type
SpecFunct/Customer Special Part No
Symbol
1
0−9
1
2
0−9
Symbol Definition
Relay
4 = Audio Filters
Data Line Only
Data and Power Line
‘D’ before pkg designator indicates dual.
‘1’ after pkg designator = latch off SMART
only.
‘2’ after pkg designator = auto−retry for S
products only.
Descriptor 3, 4
Product Family Description
Symbol
Driver
Part Number
0−9
Filter
Part Number
0−9
Protection Part Number
0−9
SpecFunct/Customer Special
0−9
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6
TND310
Naming Convention for MOS Power Devices
N G MS 1
3 001 N T1 G
Pb-Free/Halide Free Designator
• G = Pb-Free Plating/260c
• H = Halide Free Compound
Product Class
• N = Standard
• S = Special/Custom
• X = Pilot Production
• P = Engineering Prototypes
Packaging/Tape & Reel Designator
Polarity/Other
• A = Current Sense
• B = Bidirectional
• N = N Channel
• P = P Channel
• C = Complementary
• F = FETKY®
• K = Temperature Sense
• L = Low Logic Level
Product Group
• G = IGBT
• M = Micro Integration
• T = Power MOSFETs
• V = Automotive MOSFETs
Package Designator(s)
• A = SC-75
• B = D2PAK
Part Number
• C = Chip Sales
• (000 - 999) Sequential
• D = DPAK
• E = SC-89
Technology
• F = SOT-223 (Low Voltage)
• 0 = HD Plus
•
• F = TO-220FP (High Voltage)
• 1 = Trench 1
•
• G = TSOP
• 2 = Standard IGBT
•
• H = ChipFET™
• 3 = Smart IGBT
•
• J = SC-88
• 4 = HD3E
•
• K = SOT-723
• 5 = Raised Poly
•
• L = QFN/DFN/WDFN
• 6 = TMOS 7
•
• M = SOIC-8
• 7 = FastMOS
•
• N = SOT-1123/SOT-553/XDFN/ULLGA
• 8 = Trench 2
•
• P = TO-220
• 9 = Trench 3
•
• Q = 8 mm x 8 mm (Low Voltage)
• A = Trench 4
•
• Q = TSSOP (High Voltage)
• B = Trench 5
•
• R = SOT-23
• C = Trench 6
• S = SC-70
• T = Micro8™ (Low Voltage)
Voltage Rating
• T = SOT-223 (High Voltage)
• 1 = <1 to 8 V
• 6 =
• U = SOT-953
• 2 = 9 to 12 V
• 7 =
• V = FlipChip
• 3 = 13 to 20 V
• 8 =
• W = TO-247
• 4 = 21 to 30 V
• 9 =
• Y = TO-264
• 5 = 31 to 60 V
• Z = SOT-563
• AT = ATPAK
• M3 = MCPH3
• BA = TO-263 FA Forming
• M5 = MCPH5
• BD = TO-263 FD Forming
• M6 = MCPH6
• CR = Dicing Ring Packing
• PC = PCP
• CT = Wafer Tray Packing
• SC = SCH6
• CW = Wafer Packing
• FW = SOIC8
• DP = TP
• VE = VEC8
• FP = TO-220F-3FS/3SG
• ‘D’ = After Package Designator = Dual
• PL = TO-220-3L
• ‘L’ = After Package Designator = Leadless
• TL = TO-3P
• ‘S’ = After Package Designator = Single Config
• UL = TO-3PF
• ‘F’ = After Package Designator = Flat Lead (or Legacy FULLPAK™)
• WL = TO-247-3L
• ‘G’ = After Package Designator = >0.80 mm Thick
• P3 = CP
• ‘J’ = After Package Designator = 0.60 to 0.80 mm Thick
• P4 = CP4
• ‘Q’ = After Package Designator = Quad
• C3 = CPH3
• ‘U’ = After Package Designator = <0.60 mm Thick
• C5 = CPH5
Battery Protection Products
• C6 = CPH6
• EC = ECH8
• EFC = EFCP (CSP)
• EF = EFCP
• EMH = EMH8
• EM = EMH8
• ECH = ECH8
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7
• U = Low Gate Drive
(Under 2.5 V)
• S = SenseFET
• T = TVS
• W = Wafer Pack
• Z = ESD
• E = Enhanced
D
E
F
G
H
J
L
P
R
U
U1
U2
=
=
=
=
=
=
=
=
=
=
=
=
Superjunction 2
SSG Trench 4
SSG Trench 5
GaN
Trench 8
Trench 7
Trench 10
SSG HVFET
RF MOSFET
UH4
Superjunction Gen 1
Superjunction Gen 2
61 to 124 V
125 to 250 V
251 to 499 V
500 V +
TND310
TND310
Naming Convention for SO−8 (MiniMOS), Micro8, SOT−223, and TSOP−6 Power MOSFETs
PREVIOUS FORMAT 1
M
M
SF
4
P
01
HD R1
Circuit Identifier
Tape/Reel Designator
TMOS®
• M = Miniature
Optional Suffix
• E = Energy Rated
• HD = High Cell Density
• L = Logic Level
• V = TMOS V (Five)
• Z = ESD
Package Type
• DF = Dual FET (SO−8)
• SF = Single FET (SO−8)
• FT = FET Transistor (SOT−223)
• MTSF = Single FET (Micro8)
• MTDF = Dual FET (Micro8)
• MGSF = TSOP−6, SOT−23
Voltage Rating
(Divided by 10)
Channel Polarity
• N or P
• C = Complementary
Current
PREVIOUS FORMAT 2
M
T
P
75
N
06
HD
Optional Suffix
• L = Logic Level
• E = Energy Rated
• T4 = Tape & Reel (DPAK/D2PAK)
• RL = Tape & Reel (DPAK)
• HD = High Cell Density
• V = TMOS V (Five)
Circuit Identifier
• X = Engineering Samples
TMOS®
• T = TMOS
• L = SMARTDISCRETES
• G = IGBT (Except MGSF)
Voltage Rating
(Divided by 10)
Package Type
• P = Plastic TO−220
• D = DPAK
• A = TO−220 Isolated
• W = TO−247
• B = D2PAK
• Y = TO−264
PREVIOUS FORMAT 3
Channel Polarity
• N or P
Current
M
M
SF
4
Circuit Identifier
2
05
Even = N Channel
Odd = P Channel
TMOS®
• M = Miniature
Voltage + 10
Package Type
• DF = Dual FET (SO−8)
• SF = Single FET (SO−8)
• FT = FET Transistor (SOT−223)
• MTSF = Single FET (Micro8)
• MTDF = Dual FET (Micro8)
• MGSF = TSOP−6, SOT−23
Technology
• 5 = Trench
• 4 = HD3e
• 3 = HD3
• 1 = HD1
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8
TND310
TND310
Naming Convention for Bipolar Power Devices
N
Product Class
• M, MM, N = Standard
• S = Special/Custom
PREFIX
J
T
1
STEM
2 3
4 5 WT T1 G
Device Identification Code
(2 to 5 digits/characters)
Pb−Free Designator
• G = Lead−Free
Tape/Reel Designator
Product Group
• J = Bipolar Power
Package Designator
• = TO−3
• B = D2PAK
• C = Bare Die
• D = DPAK
• E = TO−220 or Case 77
• EC = Bare Die
• F = TO−220 Full PAK
• H = TO−218
• L = TO−264
• T = SOT−223
• W = TO−247
Optional Suffix
(1 to 2 characters)
• A = Audio Grade
• D = Integrated Diode
• D2 = Built−in Antisaturation Network
• FP = Waffle Pack
• WP = Wafer Pack
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TND310
TND310
Naming Convention for Bipolar Power
PREFIX
PREVIOUS FORMAT 1
T
I
STEM
P
1
2
3
4 W T
G
Pb−Free Designator
• G = Lead−Free
Device Identification Code
(2 to 4 digits/characters)
C prefix denotes bare die
Optional Suffix
• WP = Wafer Pack
PREFIX
PREVIOUS FORMAT 2
B
J
STEM
T
1
2
3
4
5
T
Tape/Reel Designator
Package Designator
• D = Case 77, TO−218 or TO−220
• UC = Bare Die
• UD = DPAK
• UH = Case 77 or TO−220
• UL = TO−220 or TO−220 Full PAK
• UV = TO−220 or TO−3
• UX = TO−220
Optional Suffix
• Z = Built−in Zener Clamp
PREFIX
2
N
G
Pb−Free Designator
• G = Lead−Free
Device Identification Code
(3 to 4 digits/characters)
PREVIOUS FORMAT 3
T1
STEM
1
2
3
4
5
Device Identification Code
(2 to 5 digits/characters)
C prefix denotes bare die
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G
Pb−Free Designator
• G = Lead−Free
TND310
TND310
Naming Convention for Rectifier Devices
PART NUMBER KEY
XXX X
PREFIX
XX
IO
(TYPE DESIGNATOR)
F = FULLY ISOLATED
A = SURFACE MT (SMA)
S = SURFACE MT (SMB/SMC)
D = DPAK
B = D2PAK
H = MEGAHERTZ
M = POWERMITE
P = POWERTAP
I = IPAK
PREFIX KEY
SUFFIX KEY
EXAMPLE:
EXAMPLE:
MUR
MBR
MR
MSR
CT
PT
WT
SF
PF
=
=
=
=
=
=
=
=
=
XX
XX X
XX
G
Pb−Free Designator
VR
• G = Lead−Free
(X10 EXCEPT
SCHOTTKY)
Tape/Reel Designator
SUFFIX
R = REVERSE
L = LOW VF
E = ENERGY
(DUAL DESIGNATOR)
ULTRA FAST RECTIFIER
(SCHOTTKY) BARRIER RECTIFIER
STANDARD & FAST RECOVERY
ULTRASOFT
CENTER TAP (DUAL) TO−220, POWERTAP, DPAK, D2PAK
CENTER TAP (DUAL) TO−218 PACKAGE
CENTER TAP (DUAL) TO−247
SOD−123 FLAT LEAD
POWER FACTOR CORRECTION SPECIFIC
MUR
ULTRAFAST
MBR
SCHOTTKY
30
20
WT
30 AMP
200 V
CENTER TAP (DUAL) TO−247
30
45
WT
30 AMP
45 V
CENTER TAP (DUAL) TO−247
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11
TND310
TND310
Naming Convention for FMO Bump
F
A
Bump Location
• A = ASE−Kaoshiung
• F = Flip−Chip Int’l.
• M = Amkor
• S = Seremban
• I = ICI
1
5
1
0
0
X
0
5
E G.B
Stage of Completion
• BE = Bump Assy.
• DP = Die Probe
• DC = Die Conversion
5−Character Part ID
0000x−9999x
(Should correspond to FG
TND310
part number root.
Place Holder
Performance options may
Default alpha “A’’ or “C’’.
be included
in this field
Naming
Convention
forasPhoto Diode
well. All 5 characters should
(Note: This field was originally
be populated. “0’’ may be
used to indicate test location.
ROOT
PREFIX
used as a place holder.)
The field is no longer used.)
N O P
E
0256
Array Devices
CD R G
Wafer Fab/Foundry
• Z = Aizu
Product Class
• C = COM1
• N = ON Semiconductor
• I = ISMF
• T = Tower
Product Group
• X = XFAB
• O = Opto
• R = Roznov
• Y = Piestany
Product Family
• P = Photo Diode Array
Resolution
• 0256 = 256 pixels
• 0512 = 512 pixels
• 1024 = 1024 pixels
Bump Composition
• G = Lead−Free
• E = Eutectic
Fab/Foundry Site
• Z = Aizu
• E = Erfurt (XFAB)
• I = Israel (Tower)
L = Lubbock (XFAB)
Pb−Free•Designator
• P = Phoenix (COM1)
• G = Lead−Free
• S = Seremban (ISMF)
• R
= Roznov
Tape/Reel
Designator
• Y = Piestany
Package Designator
2−Character Mask
• CD = CerDIP
Revision
(Use leading “0’’ for
single−digit revision levels)
Naming Convention for Ambient Light Sensor Devices
PREFIX
ROOT
Naming
Products
N O
A Convention
1 2 01forVLED/Lighting
DC R G
NC L 3 0 0 0 0 A 0 0 X X X R2
Product Class
• N = ON Semiconductor
Pb−Free Designator
• G = Lead−Free
Tape/Reel Designator
Tape/Reel Designator
Product
Group
Circuit
Identifier
•
O
=
Opto
• N = ON Semiconductor
• C = Integrated Circuit
Product Family
• A = Ambient Light Sensor
Product Family
• L = Lighting/SSL
Function
• N = Advanced Interface
• 1 = Ambient Light Sensor
• P = Power Management
• 2 = Proximity Sensor
• S = Signal
• 3 = Multiple
• T = Thermal Management
• 4 = Hue/Color
• V = Vehicular
• Output
Y = Specials/Customs
Package Designator
• Package
1 to 3 Digits
Designator
• CU = CUDFN
• DC = CTSSOP
Numeric Attributes*
• W = Wafer
• Voltage or Frequency
Indicator
Temp Range/Quality Grade*
• V =Attributes*
Vehicular (Automotive)
Alpha
• A = Close Tolerance
• C = Commercial Temp Range
• Sequence
H = High Active or High True
• L = Low Active or Low True
• X = Extended Temp Range
* Optional
• 2 = Analog
Device
Identifier
• 3 = Digital
• 4 = Multiple
* Optional
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TND310
TND310
Naming Convention for I2C Serial EEPROMs
(Formerly Catalyst Semiconductor)
ROOT
CA T 24C AAA P
T − G TN
Tape & Reel Designator
T = Tape & Reel
N = Number of Thousands Pieces/Reel
Product Group
Product Class
T = Standard Product
V = Automotive Grade Product
Plating Finish
G = NiPdAu, RoHS Compatible
Blank = Matte−Tin, RoHS Compatible
Product Family
24C = I2C Serial EEPROM
Temperature Range
I = Industrial (−40°C to +85°C)
E = Extended (−40°C to +125°C)
Memory Density
01 = 1 Kb
02 = 2 Kb
04 = 4 Kb
08 = 8 Kb
16 = 16 Kb
32 = 32 Kb
64 = 64 Kb
128 = 128 Kb
256 = 256 Kb
512 = 512 Kb
(M) 01 = 1024 Kb
Package Designator
HU3 = UDFN, 2 x 3 x 0.5 mm
HU4 = UDFN, 2 x 3 mm, 0.5P, Extended Pad
HU5 = UDFN, COL, 2 x 3 mm
L = PDIP, 300 mils
TD = TSOT−23, 1.6 x 2.9 x 1.00 mm
VP2 = TDFN, 2 x 3 x 0.75 mm
W = SOIC
X = SOIC
Y = TSSOP, 4.4 mm
Z = MSOP, 3 x 3 mm
ZD2 = TDFN, 3 x 4.9 x 0.75 mm
Naming Convention for SPI Serial EEPROMs
(Formerly Catalyst Semiconductor)
ROOT
CA T
25 AAA P
T − G TN
Tape & Reel Designator
T = Tape & Reel
N = Number of Thousands Pieces/Reel
Product Group
Product Class
T = Standard Product
V = Automotive Grade Product
Plating Finish
G = NiPdAu, RoHS Compatible
Blank = Matte−Tin, RoHS Compatible
Product Family
25 = SPI Serial EEPROM
Temperature Range
I = Industrial (−40°C to +85°C)
E = Extended (−40°C to +125°C)
Memory Density
010 = 1 Kb
020 = 2 Kb
040 = 4 Kb
080 = 8 Kb
160 = 16 Kb
320 = 32 Kb
640 = 64 Kb
128 = 128 Kb
256 = 256 Kb
512 = 512 Kb
(M) 01 = 1024 Kb
Package Designator
HU2 = UDFN, 2 x 2 x 0.5 mm
HU3 = UDFN, 2 x 3 x 0.5 mm
HU4 = UDFN, 2 x 3 mm, 0.5P, Extended Pad
L = PDIP, 300 mils
V = SOIC
VP2 = TDFN, 2 x 3 x 0.75 mm
X = SOIC
Y = TSSOP, 4.4 mm
Z = MSOP, 3 x 3 mm
ZD2 = TDFN, 3 x 4.9 x 0.75 mm
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13
TND310
TND310
Naming Convention for Microwire Serial EEPROMs
(Formerly Catalyst Semiconductor)
ROOT
CA T 93C AAA P
T − G TN
Tape & Reel Designator
T = Tape & Reel
N = Number of Thousands Pieces/Reel
Product Group
Product Class
T = Standard Product
V = Automotive Grade Product
Plating Finish
G = NiPdAu, RoHS Compatible
Blank = Matte−Tin, RoHS Compatible
Product Family
93C = Microwire Serial EEPROM
Temperature Range
I = Industrial (−40°C to +85°C)
E = Extended (−40°C to +125°C)
Memory Density
46 = 1 kb
46R = 1 kb
56 = 2 kb
57 = 2 kb
66 = 4 kb
76 = 8 kb
86 = 16 kb
Package Designator
L = PDIP, 300 mils
TB = SOT−143, 1.30 x 2.90 x 1.22 mm
V = SOIC
VP2 = TDFN, 2 x 3 x 0.75 mm
W = SOIC
X = SOIC
Y = TSSOP, 4.4 mm
ZD4 = TDFN, 3 x 3 x 0.75 mm
Naming Convention for Low Drop Out (LDO) Products
(Formerly Catalyst Semiconductor)
ROOT
CA T 6xxx AAA −P G TN
Tape & Reel Designator
T = Tape & Reel
N = Number of Thousands Pieces/Reel
Product Group
Product Class
T = Standard Product
Plating Finish
G = NiPdAu, RoHS Compatible
Blank = Matte−Tin, RoHS Compatible
Product Family
Low Drop Out (LDO)
Voltage Indicator
125
250
150
270
180
280
240
285
Package Designator
SD = SC−70, 1.25 x 2.0 x 1.1 mm
TB = SOT−143, 1.30 x 2.90 x 1.22 mm
TD = TSOT−23, 1.60 x 2.9 x 1.00 mm
UL = ULLGA
V = SOIC
Z = MSOP, 3 x 3 mm
300
330
ADJ
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14
TND310
TND310
Naming Convention for Supervisor Products
(Formerly Catalyst Semiconductor)
ROOT
CA T 8xxx A
P
T − G TN
Tape & Reel Designator
T = Tape & Reel
N = Number of Thousands Pieces/Reel
Product Group
Product Class
T = Standard Product
Plating Finish
G = NiPdAu, RoHS Compatible
Blank = Matte−Tin, RoHS Compatible
Product Family
Supervisor
Voltage Indicator
A = 1.68 V
C = 2.40 V
F = 4.20 V
L = 4.63 V
H = 4.55 V
M = 4.38 V
J = 4.00 V
Temperature Range
I = Industrial (−40°C to +85°C)
E = Extended (−40°C to +125°C)
T = 3.08 V
S = 2.93 V
R = 2.63 V
Z = 2.32 V
V = 1.60 V
W = 1.67 V
Package Designator
SD = SC−70, 1.25 x 2.0 x 1.1 mm
TB = SOT−143, 1.30 x 2.90 x 1.22 mm
TD = TSOT−23, 1.6 x 2.9 x 1.00 mm
UL = ULLGA
V = SOIC
Z = MSOP, 3 x 3 mm
Naming Convention for Charge Pumps, LED Drivers and I/O Bus Products
(Formerly Catalyst Semiconductor)
ROOT
CA T Xxxx P
T − G TN
Tape & Reel Designator
T = Tape & Reel
N = Number of Thousands Pieces/Reel
Product Group
Product Class
T = Standard Product
Plating Finish
G = NiPdAu, RoHS Compatible
Blank = Matte−Tin, RoHS Compatible
Product Family
3xxx = Non−inductive converters and
LED Driver Charge Pumps
4xxx = LED Drivers (Non−Charge pump type)
9xxx = I/O Bus Products
Temperature Range
I = Industrial (−40°C to +85°C)
E = Extended (−40°C to +125°C)
Package Designator
HU2 = UDFN, 2 x 2 x 0.5 mm
HV2 = TDFN, 3 x 3 x 0.75 mm
HV3 = TQFN, 3 x 3 x 0.75 mm
HV4 = TQFN, 4 x 4 x 0.75 mm
HV6 = TQFN, 4 x 4 x 0.75 mm
MT4 = TDFN, 2.0 x 2.0 (2 flags)
SD = SC−70, 1.25 x 2.0 x 1.1 mm
TD = TSOT−23, 1.6 x 2.9 x 1.0 mm
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15
TV = TO−263
V = SOIC
VP2 = TDFN, 2 x 3 x 0.75 mm
VS = QSOP, 150 mils
W = SOIC
Y = TSSOP, 4.4 mm
Z = MSOP, 3 x 3 mm
ZD4 = TDFN, 3 x 3 x 0.75 mm
TND310
TND310
Naming Convention for Digital Programmable Potentiometers and
Supervisor with Memory Products
(Formerly Catalyst Semiconductor)
ROOT
CA T Xxxx P
T −AA − G TN
Tape & Reel Designator
T = Tape & Reel
N = Number of Thousands Pieces/Reel
Product Group
Product Class
T = Standard Product
Plating Finish
G = NiPdAu, RoHS Compatible
Blank = Matte−Tin, RoHS Compatible
Product Family
1xxx = Supervisor with Memory Products
5xxx = Digital Programmable Potentiometers
Threshold Voltage Designator
25
42
28
45
30
Package Designator
L = PDIP, 300 mils
SD = SC−70, 1.25 x 2.0 x 1.1 mm
TD = TSOT−23, 1.6 x 2.9 x 1.00 mm
TB = SOT−143, 1.30 x 2.90 x 1.22 mm
TD = TSOT−23, 1.6 x 2.9 x 1.00 mm
V = SOIC
VP2 = TDFN, 2 x 3 x 0.75 mm
W = SOIC
Y = TSSOP, 4.4 mm
Z = MSOP, 3 x 3 mm
ZD2 = TDFN, 3 x 4.9 x 0.75 mm
ZD4 = TDFN, 3 x 3 x 0.75 mm
Temperature Range
I = Industrial (−40°C to +85°C)
E = Extended (−40°C to +125°C)
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16
TND310
TND310
Naming Convention and Ordering Information for
ASIC Devices
12345−123 − ABC
Device Number
5−3 Digit Alpha−Numeric
Notes:
1. Not all packing forms are available for each product.
2. Contact ON Semicondcutor Customer Service for more details.
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19
17
Packing Form Designator
XWF = Wafer Form
XSW = Sorted Wafer
XDW = Die in Wafer Form
XDI = Die
XDF = Die in File Frame
XDS = Die in Tape
XUD = Untested and Packaged
XUP = Untested and Packaged in Tape & Reel
XTD = Tested and Packaged in Trays or Tubes
XTP = Tested and Packaged in Tape & Reel
XPD = Photo Diode Array
XMD = Module
Revision
(Use leading “0’’ for
single−digit revision levels)
TND310
Naming Convention for Ambient Light Sensor Devices
PREFIX
N O A
1
ROOT
2 01 V
DC R G
Product Class
• N = ON Semiconductor
Pb−Free Designator
• G = Lead−Free
Product Group
• O = Opto
Tape/Reel Designator
Package Designator
• CU = CUDFN
• DC = CTSSOP
• W = Wafer
Product Family
• A = Ambient Light Sensor
Function
• 1 = Ambient Light Sensor
• 2 = Proximity Sensor
• 3 = Multiple
• 4 = Hue/Color
Temp Range/Quality Grade*
• V = Vehicular (Automotive)
Sequence
Output
• 2 = Analog
• 3 = Digital
• 4 = Multiple
* Optional
TND310
Naming Convention for Photo Diode Array Devices
PREFIX
N O P
ROOT
0256
CD R G
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12
Product Class
• N = ON Semiconductor
Pb−Free Designator
• G = Lead−Free
Product Group
• O = Opto
Tape/Reel Designator
Package Designator
• CD = CerDIP
Product Family
• P = Photo Diode Array
Resolution
• 0256 = 256 pixels
• 0512 = 512 pixels
• 1024 = 1024 pixels
Naming Convention for LED/Lighting Products
NC L
3 0 0 0 0
A
0 0 X X X R2
Tape/Reel Designator
Circuit Identifier
• N = ON Semiconductor
• C = Integrated Circuit
Product Family
• L = Lighting/SSL
• N = Advanced Interface
• P = Power Management
• S = Signal
• T = Thermal Management
• V = Vehicular
• Y = Specials/Customs
Device Identifier
Package Designator
• 1 to 3 Digits
Numeric Attributes*
• Voltage or Frequency
Indicator
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Alpha Attributes*
• A = Close Tolerance
• C = Commercial Temp Range
• H = High Active or High True
• L = Low Active or Low True
• X = Extended Temp Range
TND310
TND310
Naming Convention for Contact Image Sensor Devices
PREFIX
N O C
ROOT
02 2 01 U
Product Class
• N = ON Semiconductor
Product Group
• O = Opto
Package Designator
• U = Untested Wafer
• W = Wafer
Product Family
• C = Contact Image Sensor
Sequence
Resolution
• 02 = 200 dpi
• 03 = 300 dpi
• 04 = 400 dpi
• 06 = 600 dpi
• 12 = 1200 dpi
• 24 = 2400 dpi
Speed
• 5 = 5 MHz
• 6 = 6 MHz
• 8 = 8 MHz
• A = 10 MHz
Naming Convention for Contact Image Sensor Modules
PREFIX
N O M
ROOT
02 A2 − A R 01 G
Product Class
• N = ON Semiconductor
Pb−Free Designator
• G = Lead−Free
Product Group
• O = Opto
Misc & Special Option Number
LED
• R = Red
• B = Blue
• G = Green
• W = White
• U = Ultraviolet
Product Family
• M = Contact Image Sensor Module
Resolution
• 02 = 200 dpi
• 03 = 300 dpi
• 04 = 400 dpi
• 06 = 600 dpi
• 12 = 1200 dpi
• 24 = 2400 dpi
Size
• A2
• A3
• A4
• A6
•
•
•
•
Output
• A = Analog
• D = Digital
• M = Multiple
Dash
A7
A8
B4
AS
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19
•
•
•
•
•
Y = Yellow
I = Infrared
C = RGB
M = Multiple
X = None
TND310
Naming Convention for Image Sensors
(Formerly Cypress Semiconductor)
N O I P1 S N 1300 A – Q D I
Temperature
• C = Commercial 0 to +70°C
• I = Industrial -40 to +85°C
Product Class
• N = ON Semiconductor
Glass
• A = AF45
• B = D263 AR/AR
• C = D263 AR/IR
• D = D263
• E = D263 AR
• H = BK7G18 AR
• J = N-BK7 AR/AR
Product Group
• O = Opto
Product Category
• A = Ambient Light Sensor
• C = Contact Image Sensor
• I = Image Sensor
• M = Image Sensor Module
• P = Photo Diode Array
Product Family
• CP = Custom Product
• H2 = HAS 2
• H3 = HAS 3
• I4 = IBIS 4
• I5 = IBIS 5
• L1 = LUPA
• L2 = LUPA 2
•
•
•
•
•
•
•
•
P1
P2
P3
M1
M2
S1
V1
V2
=
=
=
=
=
=
=
=
K=
O=
S=
T=
Package
• F = QFN/QFP
• G = PGA/μPGA
• H = JLDCC
• Q = LCC
• S = CSP
• W = Wafer Sales
• X = Bare Die
PYTHON LVDS
PYTHON CMOS
PYTHON LVDS OPTION
MANO LVDS
MANO CMOS
STAR
VITA LVDS
VITA CMOS
Additional Functionality
• A = Default
• B = Additional Features
• S = Space, Level 1
• T = Space, Level 2
• U = Space, Level 3
Process
• B = BSI
• F = NIR Enhanced
• S = Standard
Color
• C=
• E=
• F=
• G=
• M=
• N=
• P=
• R=
N-BK7 IR/AR
ABC
Sapphire
Protective Tape on
Default Glass Lid
• W = Windowless
•
•
•
•
Resolution
Color
Color Microlens
Color Microlens CRA Option 1
Color Microlens CRA Option 2
Monochrome
Mono Microlens
Mono Microlens CRA Option 1
Mono Microlens CRA Option 2
•
•
•
•
•
•
•
•
•
•
www.onsemi.com
20
0250
0300
0480
0500
1000
1300
2000
3000
4000
5000
=
=
=
=
=
=
=
=
=
=
0.25 MP
0.3 MP
0.48 MP
0.5 MP
1.0 MP
1.3 MP
2.0 MP
3.0 MP
4.0 MP
5.0 MP
•
•
•
•
•
•
•
•
•
•
6600 = 6.6 MP
7000 = 7.0 MP
8000 = 8.0 MP
9600 = 9.6 MP
010K = 10 MP
012K = 12 MP
014K = 14 MP
016K = 16 MP
025K = 25 MP
Custom Name
TND310
Naming Convention for Image Sensors
(Formerly Truesense Imaging, Inc.)
K AI - 290 50 - CXA - DD - AA
Product Grade
Product Line
• K = Image Sensors
•
•
•
•
•
Family Designation
• AF = Full Frame CCD
• AI = Interline CCD
• AE = Interline EMCCD
• LI = Linear CCD
• SC = Support Chip
• AC = CMOS
• AT = TDI CCD
0
1
2
3
A
=
=
=
=
=
• C =
• E =
Resolution (2 or 3 Digits)
Specified in units of 100 K pixels,
e.g. 290 = 29.0 Mega Pixels
• T =
Sequence (2 Digits)
Color Filter Array
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
A
B
C
D
E
F
G
H
J
L
M
N
P
Q
R
S
X
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
• M=
No CFA (Monochrome)
Pigment, Bayer CMY
Pigment, Bayer RGB
Pigment, Linear RGB
3G Stagger
Pigment, Bayer RGB, Gen 2
Striped RGRB
RB Checkerboard
Hybrid Dichroic
RBG and Mono
Mono with RB Surround
Pigment, Bayer RGB, Shorter Red Wavelength
Sparse CFA Pattern A
Sparse CFA Pattern A, Gen 2
Pigment, Linear RGB, Gen2
Mono with RB Surround, Gen2
Special
• X =
Testing Method
•
•
•
•
•
•
•
•
•
A
B
C
D
No microlenses
Telecentric microlenses
Cylindrical microlenses
None with spacer (Not for UV or bundle
attachment)
• X = Special
=
=
=
=
Product Revision
Package
•
•
•
•
•
•
•
•
•
A
B
C
D
E
F
G
H
J
=
=
=
=
=
=
=
=
=
Wafer Form (No Pkg)
Die Form (No Pkg)
Cerdip, Sidebrazed Pins
Cerdip, Sidebrazed Pins, CuW
Cerdip, Leadframe
CLCC
PLCC
Plastic DIP
PGA
•
•
•
•
•
•
•
•
•
K
L
M
N
P
Q
R
S
X
=
=
=
=
=
=
=
=
=
A
B
C
D
E
F
G
H
X
=
=
=
=
=
=
=
=
=
Standard
Standard with Defect Map
Non-Standard
Non-Standard with Defect Map
Low Temperature
Low Temperature with Defect Map
Customer Specific
Standard with Special Visual
Special
Cover Glass
Microlens
•
•
•
•
Highest Grade (Fewest Cosmetic Defects)
Cosmetic Specs Relaxed Relative to Grade 0
Cosmetic Specs Relaxed Relative to Grade 1
Cosmetic Specs Relaxed Relative to Grade 2
Standard Grade: Used when only one grade is available for a
given product.
Commercial Grade: Meets all specification criteria, but have not
been fully qualified. Intended for evaluation purposes only and
have NO warranty. Quantities are strictly limited and sold only
“as available”.
Engineering Grade: Electrically functional and meet most, but
not necessarily all, product performance specifications,
however there are no limitations on the number of or size of
cosmetic defects (points, clusters, columns, glass defects, etc.)
allowed. Intended for evaluation purposes only and have NO
warranty. Quantities are strictly limited and sold only “as
available”.
Test Sample: Closely resembles the performance of the final
product, however may not meet any of the specification criteria.
Intended for evaluation purposes only and have NO warranty.
Quantities are strictly limited and sold only “as available”.
Mechanical Sample: Meets all physical dimensions and
tolerances and likely does not image. Intended for evaluation
purposes only and have NO warranty. Quantities are strictly
limited and sold only “as available”.
Special
PGA, CuW Base
QFP
CSP
Bare Die, Reconstituted Wafer
Polyimide Substrate
Aluminum Nitride Substrate
pLLP
PGA, CuW Base, TEC Cooler
Special
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
A
B
C
D
E
F
G
H
J
K
P
Q
R
S
X
www.onsemi.com
21
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
No Glass
Clear, No Coatings
Clear, AR Coated 1 Side
Clear, AR Coated 2 Sides
Clear, AR Coated Side 1, IR Coated Side 2
Quartz, No Coatings
Plastic, No Coatings
IR Absorbing, AR Coated 2 Sides
Clear, AR Coated 2 Sides, with Light Shield
Quartz, AR Coated 2 Sides
Clear, No Coatings (Taped)
Clear, AR Coated 1 Side (Taped)
Clear, AR Coated 2 Sides (Taped)
Quartz, No Coatings (Taped)
Special
TND310
Naming Convention for Image Sensors
(Formerly Aptina Imaging Corporation)
Base Part Number
A S 05 4 0 HD 8 C 22 S H D2 0 - XX - YYYYY - E
Product Line
• A = Image Sensors
Sample and Demo Board Identifier
•
•
•
•
•
Product Type
• S = SOC
• G = Generic
• R = RAW Sensor • B = Bridge
• P = ISP
• D = Downgrade
• T = Test Chip
•
•
•
•
•
5
6
7
8
9
=
=
=
=
=
1/5”
1/6”
1/7”
1/8”
1/9”
•
•
•
•
•
A=
B=
C=
D=
N=
Customer specific attribute
Special Options
•
•
•
•
•
•
•
•
•
•
•
1/10”
1/11”
1/12”
1/13”
N/A
Major “Imager Customer” Revision
Defaulted to “S”, 2~9
S=
L=
A=
N=
D=
F=
Common
Logic
Color Array
Mono Array
RCCB
RYYB
0
D
H
D
G
A
B
C
F
L
J
=
=
=
=
=
=
=
=
=
=
=
• K = Dual Sensor (3D)
Headboard
• M = ALTM Only
• N = Different Package
Size
• P = Dual Sensor (3D)
Demo Kit
• W = Demo Module
• D3 = Demo Kit (Demo3)
• Q = Adapter/FBGA/
ASIC Board
Default, N/A
Demo Board
Head Board
High Speed
WLM Socketed Board
EMI Pad
Non-Coating
Without EMI Shielding
With Flash Stacked Die
Low Cost
Low Profile
Package Options
Marketing Descriptor
Provides marketing ability to add additional descriptive information
that may be helpful in positioning the part.
• CS = Default, CMOS Sensor • HS = High Speed
• NB = Notebook
• LC = Low Cost
• AI = Array Imager • CM = Camera
• HQ = Premium
• AT = Automotive
• SC = Scanning
• QP = Downgrade
• MB = Mobile
• CP = Clarity+
• HD = High Definition
• SR = Surveillance
• M0 = Module
• CM = Medical
•
•
•
•
•
•
Eng Identifier (AS/ES/QS)
Mechanical Sample
Demo Board
Demo Kit
Production Part
Customer Special
Unique Product Identifier (ID)
Must increment for a new product with the same resolution and
optical format (e.g., each new ¼” VGA part increments this by one).
Sequence 0, 1, 2…9, A, B,…Z .
Chromaticity
• C = RGB
• M = Monochrome
• Y = CMY
• R = RCCC
• G = RGBC
• B = RCBC
=
=
=
=
=
Mechanical Finish, Glass, Wafer
Thickness*
See definitions on following page
Resolution
• Y1 = 0.01 Megapixel
• Y2 = 0.02 Megapixel
• Y9 = 0.09 Megapixel
• X1 = 0.1 Megapixel
• X9 = 0.9 Megapixel
• 01 = 1 Megapixel
• 99 = 99 Megapixel
• B1 = Demo3 Base Board
• B2 = Demo3 Adapter - Old Style HB
• B3 = Demo2x Adapter - New Style HB
• B4 = ICP Adapter Board
• B5 = Stereo Receiver Board
Optical Format
• 0 = >1” or ISP
• 1 = 1”
• 2 = 1/2”
• 3 = 1/3”
• 4 = 1/4”
E
M
GEVB
GEVK
Blank
(OR) IP Control for ICP
• “0” – FD = 0, EDOF = 0
• “1” – FD = 1, EDOF = 1
• “2” – FD = 1, EDOF = 0
• “3” – FD = 0, EDOF = 1
CRA Degree
•
•
•
•
•
•
•
A
B
C
D
E
F
Z
=
=
=
=
=
=
=
Lead Free
Leaded
Halogen Free
7.5 x 7.5 Lead Free
9.5 x 9.5 Lead Free
5.5 x 5.5 Lead Free
BIB/HIB Option
(Different Bond Option)
Package Type
•
•
•
•
•
•
•
•
•
A
B
C
D
E
F
G
H
J
=
=
=
=
=
=
=
=
=
CLCC
PLCC
ILCC
Die Sales
IBGA
LBGA
VFBGA
CPGA
TPLCC
•
•
•
•
•
•
•
•
www.onsemi.com
22
K =
L =
M=
N =
P =
Q=
R =
W=
Y =
Interface Type
M
C
H
U
=
=
=
=
MIPI
CCP/CCP2
HISPI
MULTI
Operating Temp
“00” as N/A, otherwise will show
the actual degree shift
•
•
•
•
•
•
•
•
•
S
A
X
N
=
=
=
=
•
•
•
•
N
P
L
S
•
•
•
•
•
•
•
0
1
2
3
4
6
9
=
=
=
=
=
=
=
Module
100 μm Thickness
200 μm Thickness
305 μm Thickness
400 μm Thickness
675 μm Thickness
No-Grinding
CSP
WLC
CLGA
imBGA
tpBGA
iCBGA
mPLCC
Wafer Sales (EA)
Wafer Sales (WFR)
=
=
=
=
N/A
PARALLEL
LVDS
SLVS
Commercial
Automotive (–40 to +85°C)
Extended (–40 to +105°C)
N/A
TND310
Naming Convention for Image Sensors
(Formerly Aptina Imaging Corporation)
Packaged Parts
- D P BR
Mechanical Finish
Glass Type
• D = Dry Pack
• T = Tape & Reel
• C = Chiptray
• BR
= Double Side
BBAR Glass
• IR
= IR
• Blank = Standard Glass
Protective Film
• P = With Protective Film
• R = Without Protective Film
Wafer and Die Sales
- 200
Wafer Thickness
• 200 = Wafer Thickness
Demo Board Special
- S213A
Machanical Finish
• S213A = DSL213A
• S115 = SUNEX_DSL115
www.onsemi.com
23
TND310
Naming Convention for Legacy Image Sensors
(Formerly Aptina Imaging Corporation)
MT9 J 0 0 1 I12 ST C V xxxxxx ES
Special Processing
• AS = Alpha Sample
• ES = Engineering Sample
• MS = Mechanical Sample
• MC = Module Camera Demo System
• I
= Errata
• :X = DID Mark Designator
• Blank = Mass Production
Product Line
• MT9 = Image Sensors, Legacy
Product Size
• C = CIF
• V = VGA
• M = 1 Meg
• D = 2 Meg
• T = 3 Meg
• Q = 4 Meg
• P = 5 Meg
Product Type
• 0 = Sensor Only
• 1 = SOC
• 2 = “Open”
• 3 = DSP
•
•
•
•
•
•
•
E =
N =
J =
W=
F =
H =
S =
8 Meg
9 Meg
10 Meg
12 Meg
14 Meg
16 Meg
Special/Custom
Design ID and Probe/Test Level
Six characters will appear for Die/
Wafer Only
• 4 = High Speed
• 5 = Custom
• 6 = Others
Product Group
• 0 = Consumer Camera
• 1 = Mobile/PC
• 2 = Automotive/Industrial
• 3 = Surveillance
Unique Product Identifier (ID)
Must increment for a new product with the same resolution and
optical format (e.g., each new ¼” VGA part increments this by one).
Sequence 0, 1, 2…9, A, B,…Z .
PACKAGE CODE
Material/Construction
•
•
•
•
A
C
X
E
=
=
=
=
TSV-RDL
Ceramic
Xintec
Tessera
•
•
•
•
P
S
I
L
Plastic
Shellcase
Imager
Laminate
=
=
=
=
• T = Tiny
• Z = CWL CSP
• M = WLC
Form
Form 1: Form
• D = Singulated Die
• W = Die in Wafer Form
• M = Module
Package Type
•
•
•
•
•
•
•
0
1
2
3
4
5
6
=
=
=
=
=
=
=
CSP
LCC Pb-Free
ICSP
PGA
QFP
Custom
Bumped
•
•
•
•
•
•
•
7
8
9
A
B
C
D
=
=
=
=
=
=
=
• B = Demo Base Board
• R = Demo Received Board
• V = LVDS Adapter Board
BGA
CSP Pb-Free
ICSP Pb-Free
BGA Pb-Free
MVP
Non-Bumped TSV-RDL
Low Profile
Form 2 = 0
Leads/Bumps/Pins
•
•
•
•
•
•
•
•
0
1
2
3
4
5
6
7
=
=
=
=
=
=
=
=
32
28
48
64
144
208
280
52
•
•
•
•
•
•
•
•
8
9
A
B
C
D
E
F
=
=
=
=
=
=
=
=
30
44
35
13
84
137/169
16
38
•
•
•
•
•
•
•
G
H
J
K
L
M
N
=
=
=
=
=
=
=
Special Options
• A = Lens Head Board and Adapter Kit
• B = Non-Standard CRA
• C = Non-Standard CRA 27 Degrees
• D = Demo Board
• E = Recon (RDL)
• F = Frame Grabber
• G = WLM Socketed Headboard
• H = Head Board
• I = IR Glass
• J = JPEG Output
• K = Special Die Offset
• L = Lens Eval Kit
• M = MiPi
• N = No Lid
• P = CCP
• Q = Optical Quality
• LC = Low Cost
• R = Reference Camera
• S = High Speed
• T3 = Tier 3
• U = Parallel Interface
• V = Serial Interface
• W = NTUB
• X = No Micro Lens
• Y = Black Solder Mask
• Z = Non-Standard Micro Lens Shift
• PF = Protective Film
• 2 = 200 μm Wafer Thickness
• 3 = 305 μm Wafer Thickness
• 4 = 200 μm Thick Cover Glass
• 5 = 300 μm Thick Cover Glass
• 6 = 675 μm Wafer Thickness
• 7 = EMI Pad
• 8 = Non-Coating
Chromaticity
• C = RGB (Red, Green, Blue)
• M = Monochrome
• R = Red/Clear
• G = RGBC
• Y = CMY (Cyan, Magenta, Yellow)
• L = Logic - IP “00”
116
122
54
25
55
67
120
Operating Temp
• ST = Commercial
• AT = Automotive
• XT = Extended
Form 3 = 0
Note: If using Form 1, Form 2 (Package Type) and Form 3
(Leads/Bumps/Pins) will be “0”
www.onsemi.com
24
TND310
Naming Convention for Tunable Components
TCP S - 31 68 N A - D T
Packing
• T = Tape & Reel
Product Line
• TCP = Tunable Components
Package
• D = WLCSP
• Q = QFN
Process Status
• X = Pilot production
• S = Special/Custom
• P = Prototype
• “Blank” = Production
Linearity
• A = High
• B = Normal
• C = Low
Process Generation
• 10 = Gen 1.0
• 30 = Gen 3.0
• 31 = Gen 3.1
Capacitor Value
• 12 = 1.2 pF
• 18 = 1.8 pF
• 27 = 2.7 pF
• 33 = 3.3 pF
• 39 = 3.9 pF
•
•
•
•
47
56
68
82
Tuning
=
=
=
=
• N = Normal
• H = High
• U = Ultra-high
4.7 pF
5.6 pF
6.8 pF
8.2 pF
www.onsemi.com
25
TND310
Naming Convention for Standard RF ICs
(Formerly Axsem)
AX 5 0
4
3 - 1 - TW 30
Orderable Quantity
• 1 =1
• 05 = 500
• 20 = 2,000
• 30 = 3,000
Product Group
Family
• 2 = LCD Driver
• 5 = Sub 1 GHz Radio
• 6 = 2.4 GHz Radio
Packing
• TW = T: Tape & Reel
W: Die Orientation
• WD = Wafer Sell in Die Qty
• BA = Bag
Package Type
• 0 = QFN or Die
• 1 = TSSOP
• 2 = Other QFN Option
Version
Function
• 3 = Transmitter Only
• 4 = Narrow Band Capable Transceiver
• 5 = General Purpose Transceiver
• 6 = Other
Type
• 1 = Type 1
• 2 = Type 2
• 3 = Type 3
Naming Convention for RF Microcontrollers
(Formerly Axsem)
AX 8052 F 1
4
3 - 2 - TB 05
Orderable Quantity
• 1 =1
• 05 = 500
• 30 = 3,000
Product Group
Microcontroller
Packing
• TB = T: Tape & Reel
B: Die Orientation
• WD = Wafer Sell in Die Qty
• BA = Bag
Memory Type
• F = Flash
• R = ROM
• X = RAM
Memory Size
• 1 = 64 K Flash
• 2 = 32 K Flash
• 3 = 16 K Flash
Version
Type
• 1 = Type 1
• 2 = Type 2
• 3 = Type 3
Function
• 3 = Transmitter Only
• 4 = Narrow Band Capable Transceiver
• 5 = General Purpose Transceiver
www.onsemi.com
26
TND310
Naming Convention for RF Microcontrollers with Radio Standards
(Formerly Axsem)
AX - SFEU - API - 1 - 01 - TB 05
Orderable Quantity
• 1 =1
• 05 = 500
• 30 = 3,000
Product Group
Radio Standard
• SFEU = SIGFOX EU
• SFUS = SIGFOX US
• EOEU = ENOCEAN EU
• EOUS = ENOCEAN US
=
• AT
Packing
• TX = T: Tape & Reel
X: Die Orientation
• D = Wafer Sell in Die Qty
Software Option
• Empty = Default
• API
= API
Firware Version
Hardware Version
Naming Convention for RF Modules
(Formerly Axsem)
AX - AT10 - MINI21 - 868 - B 1
Orderable Quantity
• 1 =1
• 05 = 500
• 30 = 3,000
Product Group
Radio Standard
• AT10 = AXSEM AT
• SF10 = SIGFOX
• EO10 = ENOCEAN
• WM10 = Wireless M-Bus
Packing
• B = Bag
Hardware Type & Version
• MINI21 = MINI-STAMP
• ANT21 = ANT-STAMP
• USB21 = USB Stick
Carrier Frequency
www.onsemi.com
27
TND310
Naming Convention for IPM Devices
STK 1 2
3
-
4
5 0 A B - E
Circuit Identifier
• STK = Standard
• Other = Custom
Special Division
• E = Pb-Free
• H = Halogen Free
Product Group
• 1 = Small Signal (> 10 MHz)
• 2 = Audio Power
• 3 = Small Signal (< 100 kHz)
• 4 = Audio Power (AB Class)
• 5 = Inverter (New), PFC*
• 6 = Actuator Driver, Inverter (Old)
• 7 = Switching Mode
• 9 = Automotive
Optional Suffix
• One ot two digits
• Version change, testing change,
forming change, etc.
Lead Forming
• See Table
Function Division or Forming Change
• 0 = Standard
• 1 = 1st Change
• 2 = 2nd Change
• 3 = 3rd Change
Package Type
• See Table
Function
• See Table
Maximum Rated Current
• See Table
UL Standard Certification
• – = Normal Products
• U = UL Standard Certified Products
Maximum Rated Voltage
• See Table
2
3
4
5
Designator
Package Type
Function
Maximum Rated Voltage
Maximum
Rated Current
(Blank)
—
—
—
—
A
Lead Forming
Straight
1
Smart
3-Phase Inverter; Built-In 1 Shunt R
Up to 150 V; Active High
1 A or Lower
—
2
Smart 2nd
3-Phase Inverter; For External 1 Shunt R
Up to 599 V; Active High
Up to 2 A
—
3
SIP04
3-Phase Inverter; Built-In 3 Shunt Rs
600 V; Active High
Up to 3 A
—
4
SOP1
3-Phase Inverter; For External 3 Shunt Rs
600 V; Active High
Up to 5 A
—
5
SIP1A
Single-Phase Inverter; Built-In 1 Shunt R
600 V; Active High
Up to 8 A
—
6
SIP2
Single-Phase Inverter; For External 1
Shunt R
Up to 1200 V; Active High
Up to 10 A
—
7
SIP2A
Induction Heating; 1 Burner
1700 V; Active High
Up to 10 A
—
8
SIP3
induction Heating; 2 Burners
—
Up to 12 A
—
9
SIP2 Case Type
PFC + 3-Phase Inverter
—
Up to 15 A
—
0
SIP3 Case Type
PFC + 3-Phase Inverter
—
Up to 15 A
A
DIP30
PFC; No Bridge
Up to 150 V; Active Low
Up to 20 A
SL Zigzag (From case to first clipping point = 2.5 mm)
B
DIP42
PFC; With Bridge
Up to 599 V; Active Low
Up to 25 A
SL Zigzag (From case to first clipping point = 5.35 mm)
C
DIPS
PFC; Bridge Free
600 V; Active Low
Up to 30 A
One Side Zigzag (Lead length 6.8 mm version)
D
DIP05
PFC; Interleave
600 V; Active Low
Up to 40 A
SL Bent
E
DIP2
PFC; Bridge Free Interleave
600 V; Active Low
Up to 50 A
One Side Zigzag (With insert plate)
F
DIP4
PFC + 3-Phase Inverter; No Bridge
Up to 1200 V; Active Low
Up to 60 A
L Bent
G
DIP5
PFC + 4-Phase Inverter; With Bridge
1700 V; Active Low
Up to 75 A
SL Bent + Stopper
H
Tenmen Case Screw
PFC + 5-Phase Inverter; Bridge Free
—
75 A or Larger
—
—
J
Tenmen Case Terminal
PFC + 6-Phase Inverter; Interleave
—
Up to 1 kW / 5 A
DIPS Bent (One side SL/One side SL Chidori; Lead
length 5.5 mm version above case)
K
SIP2B
Power Conditioner; Converter
—
Up to 2 kW / 10 A
One Side Zigzag (Lead length 9 mm version)
L
DIPS2
Power Conditioner; Inverter
600 V
Up to 3 kW / 15 A
L-Zigzag (Smart 1st)
M
SIP3B
Power Conditioner; Converter + Inverter
600 V; Built-In 1 Shunt R
Up to 4 kW / 20 A
Both Side Chidori (Smart 2nd bent)
N
New Package
Power Conditioner; Others
600 V; Built-In HVIC
Up to 5 kW / 25 A
DIPS Bent (One side SL/One side SL Chidori; Lead
length 9.7 mm version above case)
P
SIP3A
—
600 V; Built-In HVIC + Shunt R
Up to 6 kW / 30 A
—
Q
DIPS3
3-Phase Inverter + Break; Built-In a
Shunt R
1200 V
Up to 8 kW / 40 A
—
DIPS3.5
3-Phase Inverter + Break; For External
3 Shunt Rs
1200 V; Built-In 1 Shunt R
Up to 10 kW
—
R
S
PQFN
CIB; Built-In a Shunt R
1200 V; Built-In HVIC
10 kW or Larger
—
T
SIP3A
CIB; For External 3 Shunt Rs
1200 V; Built-In HVIC + Shunt R
Up to 100 A
—
U
DIP-C2
—
—
Up to 150 A
—
V
DIP-C3
—
—
Up to 200 A
—
www.onsemi.com
28
TND310
Naming Convention for DS and iPS Devices
PRODUCT NAME
LC 1 2 3 4 5 6 7 8 9 A B - XXX
Product Class
• L = Power Supply (Regulator)
• LA = Bipolar Linear
• LB = Bipolar Digital
• LC = CMOS
• LE = Memory
• LV = Bi-CMOS
Device Identification Code
Includes all or some of
the following items
Part Code
Number and alpha characters
Quantity Level
• U = Automotive
Revision Code
• N = Rev 1
• A = Rev 2
• B = Rev 3
• Y = Rev 4
• S = Rev 5
Package Designator
Price Code
• L = Price Change First Time
• LL = Second Time
• LM = Third Time
Hotsukyo Code
• Z = Hotsukyo
www.onsemi.com
29
Packing Name
• E = Pb-Free
• G = Pb-Free (Legacy)
• H = Halide Free
TND310
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TND310/D
TND310/D