MITSUBISHI <INTELLIGENT POWER MODULES>
PM75B5LA060
FLAT-BASE TYPE
INSULATED PACKAGE
PM75B5LA060
FEATURE
a) Adopting new 5th generation IGBT (CSTBT TM ) chip, which
performance is improved by 1µm fine rule process.
For example, typical Vce(sat)=1.55V @Tj=125°C
b) Over-temperature protection by detecting Tj of the CSTBT TM
chips and error output is possible from all each conservation upper and lower arm of IPM.
c) New small package
Reduce the package size by 10%, thickness by 22% from
S-DASH series.
• 2φ 75A, 600V Current-sense IGBT type inverter
• 75A, 600V Current-sense Chopper IGBT
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for, shortcircuit, over-temperature & under-voltage (P-Fo available
from upper arm devices)
• UL Recognized Yellow Card No.E80276(N)
File No.E80271
APPLICATION
Photo voltaic power conditioner
PACKAGE OUTLINES
Dimensions in mm
L A B E L
11
120
106
7
19.75
3.25
16
16
16
3-2
3-2
3-2
16
15.25
2-φ5.5
MOUNTING HOLES
6-2
3
2-φ2.5
55
N
17.5
12
(19.75)
5
9
13
19
U
V
W
13.5
B
6-M5 NUTS
22 +– 10.5
12
32.75
23
23
23
Terminal code
19-■0.5
31
13
7
(SCREWING DEPTH)
10.75
12
11.75
14.5
32
P
17.5
1
1.
2.
3.
4.
5.
6.
7.
VUPC
UFO
UP
VUP1
VVPC
VFO
VP
8.
9.
10.
11.
12.
13.
14.
VVP1
NC
NC
NC
NC
VNC
VN1
15.
16.
17.
18.
19.
NC
UN
VN
WN
Fo
Oct. 2005
MITSUBISHI <INTELLIGENT POWER MODULES>
PM75B5LA060
FLAT-BASE TYPE
INSULATED PACKAGE
INTERNAL FUNCTIONS BLOCK DIAGRAM
VNC WN
NC FO
VN1
VN
UN
NC NC NC NC
VP
VVP1
VVPC
VFO
UP
VUPC
VUP1
UFO
1.5k
1.5k
GND IN Fo
Vcc
GND SC OT OUT
B
GND IN Fo
Vcc
GND SC OT OUT
GND IN Fo
Vcc
GND IN Fo
GND SC OT OUT
N
1.5k
Vcc
GND SC OT OUT
W
V
GND IN Fo
Vcc
GND SC OT OUT
U
P
MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol
VCES
±IC
±ICP
PC
Tj
Parameter
Collector-Emitter Voltage
Collector Current
Collector Current (Peak)
Collector Dissipation
Junction Temperature
Condition
Ratings
600
75
150
390
–20 ~ +150
Unit
V
A
A
W
°C
Condition
Ratings
600
75
150
390
75
600
–20 ~ +150
Unit
V
A
A
W
A
V
°C
Ratings
Unit
20
V
20
V
20
20
V
mA
VD = 15V, VCIN = 15V
TC = 25°C
TC = 25°C
TC = 25°C
CONVERTER PART
Symbol
VCES
IC
ICP
PC
IF
VR(DC)
Tj
Parameter
Collector-Emitter Voltage
Collector Current
Collector Current (Peak)
Collector Dissipation
FWDi Forward Current
FWDi Rated DC Reverse Voltage
Junction Temperature
VD = 15V, VCIN = 15V
TC = 25°C
TC = 25°C
TC = 25°C
TC = 25°C
TC = 25°C
(Note-1)
CONTROL PART
Symbol
Parameter
VD
Supply Voltage
VCIN
Input Voltage
VFO
IFO
Fault Output Supply Voltage
Fault Output Current
Condition
Applied between : VUP1-VUPC
VVP1-VVPC, VN1-VNC
Applied between : UP-VUPC, VP-VVPC
UN • VN • WN-VNC
Applied between : UFO-VUPC, VFO-VVPC, FO-VNC
Sink current at UFO, VFO, FO terminals
Oct. 2005
MITSUBISHI <INTELLIGENT POWER MODULES>
PM75B5LA060
FLAT-BASE TYPE
INSULATED PACKAGE
TOTAL SYSTEM
Parameter
Supply Voltage Protected by
VCC(PROT)
SC
VCC(surge) Supply Voltage (Surge)
Storage Temperature
Tstg
Isolation Voltage
Viso
Symbol
Ratings
Condition
VD = 13.5 ~ 16.5V, Inverter Part,
Tj = +125°C Start
Applied between : P-N, Surge value
60Hz, Sinusoidal, Charged part to Base, AC 1 min.
Unit
450
V
500
–40 ~ +125
2500
V
°C
Vrms
THERMAL RESISTANCES
Symbol
Condition
Parameter
Rth(j-c)Q
Rth(j-c)F
Rth(j-c)Q
Rth(j-c)F
Rth(j-c)F
Junction to case Thermal
Resistances
Rth(c-f)
Contact Thermal Resistance
Inverter IGBT part (per 1/4 module)
Inverter FWDi part (per 1/4 module)
Converter IGBT part
Converter FWDi upper part
Converter FWDi lower part
Case to fin, (per 1 module)
Thermal grease applied
(Note-1)
(Note-1)
(Note-1)
(Note-1)
(Note-1)
(Note-1)
Min.
—
—
—
—
—
Limits
Typ.
—
—
—
—
—
Max.
0.32
0.53
0.32
0.33
0.53
—
—
0.038
Min.
—
—
—
0.3
—
—
—
—
—
—
Limits
Typ.
1.7
1.55
2.2
0.7
0.1
0.2
0.9
0.2
—
—
Max.
2.3
2.0
3.3
1.4
0.2
0.4
1.8
0.4
1
10
Unit
°C/W
(Note-1) Tc (under the chip) measurement point is below.
(unit : mm)
arm
axis
X
Y
UP
IGBT FWDi
31.2
33.6
4.5
–7.5
VP
IGBT FWDi
66.0
66.0
0.6
–8.6
WP
FWDi
85.8
–3.1
UN
IGBT FWDi
41.6
40.5
0.0
8.0
VN
IGBT FWDi
56.2
56.2
–5.5
2.7
WN
IGBT FWDi
76.3
76.3
–6.5
2.7
Bottom view
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol
VCE(sat)
VEC
ton
trr
tc(on)
toff
tc(off)
ICES
Parameter
Condition
Collector-Emitter
Saturation Voltage
FWDi Forward Voltage
VD = 15V, IC = 75A
VCIN = 0V
(Fig. 1)
–IC = 75A, VD = 15V, VCIN = 15V
Switching Time
VD = 15V, VCIN = 0V↔15V
VCC = 300V, IC = 75A
Tj = 125°C
Inductive Load
Collector-Emitter
Cutoff Current
VCE = VCES, VCIN = 15V
Tj = 25°C
Tj = 125°C
(Fig. 2)
(Fig. 3,4)
(Fig. 5)
Tj = 25°C
Tj = 125°C
Unit
V
V
µs
mA
Oct. 2005
MITSUBISHI <INTELLIGENT POWER MODULES>
PM75B5LA060
FLAT-BASE TYPE
INSULATED PACKAGE
CONVERTER PART
Symbol
VCE(sat)
VEC
VFM
ton
trr
tc(on)
toff
tc(off)
ICES
Condition
Parameter
Collector-Emitter
Saturation Voltage
FWDi Forward Voltage
Forward Voltage
VD = 15V, IC = 75A
VCIN = 0V, Pulsed
(Fig. 1)
–IC = 75A, VCIN = 15V, VD = 15V
IF = 75A
Switching Time
VD = 15V, VCIN = 0V↔15V
VCC = 300V, IC = 75A
Tj = 125°C
Inductive Load
Collector-Emitter
Cutoff Current
VCE = VCES, VD = 15V
Tj = 25°C
Tj = 125°C
(Fig. 2)
(Fig. 3,4)
(Fig. 5)
Tj = 25°C
Tj = 125°C
Min.
—
—
—
—
0.3
—
—
—
—
—
—
Limits
Typ.
1.7
1.55
2.2
1.9
0.7
0.1
0.2
0.9
0.2
—
—
Max.
2.3
2.0
3.3
3.0
1.4
0.2
0.4
1.8
0.4
1
10
Min.
—
—
1.2
1.7
150
150
Limits
Typ.
20
6
1.5
2.0
—
—
Max.
30
12
1.8
2.3
—
—
Unit
V
V
V
µs
mA
CONTROL PART
Symbol
Parameter
Condition
VN1-VNC
V*P1-V*PC
ID
Circuit Current
VD = 15V, VCIN = 15V
Vth(ON)
Vth(OFF)
Input ON Threshold Voltage
Input OFF Threshold Voltage
Applied between : UP-VUPC, VP-VVPC
UN • VN • WN-VNC
SC
Short Circuit Trip Level
–20 ≤ Tj ≤ 125°C, VD = 15V (Fig. 3,6)
toff(SC)
Short Circuit Current Delay
Time
VD = 15V
Over Temperature Protection
VD = 15V
Detect Tj of IGBT chip
OT
OTr
UV
UVr
IFO(H)
IFO(L)
Supply Circuit Under-Voltage
Protection
Fault Output Current
Minimum Fault Output Pulse
Width
tFO
Inverter part
Converter part
(Fig. 3,6)
Trip level
Reset level
Trip level
Reset level
–20 ≤ Tj ≤ 125°C
–
VD = 15V, VFO = 15V
(Note-2)
VD = 15V
(Note-2)
—
0.2
—
135
—
11.5
—
—
—
145
125
12.0
12.5
—
10
—
—
12.5
—
0.01
15
1.0
1.8
—
Unit
mA
V
A
µs
°C
V
mA
ms
(Note-2) Fault output is given only when the internal SC, OT & UV protections schemes of either upper or lower arm device operate to
protect it.
MECHANICAL RATINGS AND CHARACTERISTICS
Symbol
—
—
—
Condition
Parameter
Mounting torque
Mounting torque
Weight
Main terminal
Mounting part
screw : M5
screw : M5
—
Min.
2.5
2.5
—
Limits
Typ.
3.0
3.0
380
Max.
3.5
3.5
—
Unit
N•m
N•m
g
RECOMMENDED CONDITIONS FOR USE
Symbol
VCC
Parameter
Supply Voltage
VD
Control Supply Voltage
VCIN(ON)
VCIN(OFF)
Input ON Voltage
Input OFF Voltage
Condition
Applied across P-N terminals
Applied between : VUP1-VUPC, VVP1-VVPC
VN1-VNC
Applied between : UP-VUPC, VP-VVPC
UN • VN • WN-VNC
fPWM
PWM Input Frequency
Using Application Circuit of Fig. 8
tdead
Arm Shoot-through
Blocking Time
For IPM’s each input signals
Recommended value
≤ 450
Unit
V
15 ± 1.5
V
≤ 0.8
≥ 9.0
V
≤ 20
kHz
≥ 2.0
µs
(Note-3)
(Fig. 7)
(Note-3) With ripple satisfying the following conditions : dv/dt swing ≤ ±5V/µs, Variation ≤ 2V peak to peak
Oct. 2005
MITSUBISHI <INTELLIGENT POWER MODULES>
PM75B5LA060
FLAT-BASE TYPE
INSULATED PACKAGE
PRECAUTIONS FOR TESTING
1. Before appling any control supply voltage (VD), the input terminals should be pulled up by resistores, etc. to their corresponding supply voltage and each input signal should be kept off state.
After this, the specified ON and OFF level setting for each input signal should be done.
2. When performing “SC” tests, the turn-off surge voltage spike at the corresponding protection operation should not be allowed to rise above VCES rating of the device.
(These test should not be done by using a curve tracer or its equivalent.)
P, (U,V,W)
IN
Fo
VCIN
P, (U,V,W)
Ic
V
IN
Fo
VCIN
–Ic
V
(15V)
(0V)
U,V, (N)
VD (all)
VD (all)
Fig. 1 VCE(sat) Test
U,V,W, (N)
Fig. 2 VEC, (VFM) Test
a) Lower Arm Switching
P
VCIN
(15V)
Fo
Signal input
(Upper Arm)
trr
CS
Ic
Vcc
Fo
Signal input
(Lower Arm)
VCIN
VCE
Irr
U,V,W
90%
90%
N
VD (all)
b) Upper Arm Switching
Ic
10%
10%
10%
10%
P
tc(on)
Fo
Signal input
(Upper Arm)
VCIN
VCIN
U,V
CS
VCIN
(15V)
tc(off)
Vcc
td(on)
tr
td(off)
tf
Fo
Signal input
(Lower Arm)
(ton= td(on) + tr)
(toff= td(off) + tf)
N
Ic
VD (all)
Fig. 3 Switching Time and SC Test Circuit
Fig. 4 Switching Time Test Waveform
VCIN
Short Circuit Current
P, (U,V,W)
A
VCIN
(15V)
Constant Current
IN
Fo
SC Trip
Pulse VCE
Ic
VD (all)
U,V,W, (N)
Fo
toff(SC)
Fig. 5 ICES Test
Fig. 6 SC Test Waveform
IPM’ input signal VCIN
(Upper Arm)
1.5V
0V
IPM’ input signal VCIN
(Lower Arm)
0V
2V
tdead
2V
1.5V
1.5V
2V
tdead
t
t
tdead
1.5V: Input on threshold voltage Vth(on) typical value, 2V: Input off threshold voltage Vth(off) typical value
Fig. 7 Dead Time Measurement Point Example
Oct. 2005
MITSUBISHI <INTELLIGENT POWER MODULES>
PM75B5LA060
FLAT-BASE TYPE
INSULATED PACKAGE
20k
VUP1
IF→
UFO 1.5k
UP
≥0.1µ
≥10µ
20k
VUPC
VVP1
IF→
VFO 1.5k
VP
≥0.1µ
≥10µ
VVPC
P
Vcc
Fo
IN
OUT
OT
SC
GND GND
Vcc
Fo
IN
U
OUT
~
OT
AC Output
SC
GND GND
V
NC
NC
NC
W
NC
20k
Vcc
IF→
Fo
UN
≥0.1µ
≥10µ
IN
OUT
OT
SC
GND GND
20k
Vcc
IF→
Fo
VN
≥0.1µ
≥10µ
IN
N
OUT
OT
SC
GND GND
20k
VN1
IF→
Vcc
Fo
WN
≥0.1µ
≥10µ
VNC
IN
OUT
OT
SC
GND GND
B
FO 1.5k
NC
Fig. 8 Application Example Circuit
NOTES FOR STABLE AND SAFE OPERATION ;
Design the PCB pattern to minimize wiring length between opto-coupler and IPM’s input terminal, and also to minimize the
stray capacity between the input and output wirings of opto-coupler.
Connect low impedance capacitor between the Vcc and GND terminal of each fast switching opto-coupler.
Fast switching opto-couplers: tPLH, tPHL ≤ 0.8µs, Use High CMR type.
Slow switching opto-coupler: CTR > 100%
Use 3 isolated control power supplies (VD). Also, care should be taken to minimize the instantaneous voltage charge of the
power supply.
Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between P and N
terminal.
•
•
•
•
•
•
Oct. 2005
MITSUBISHI <INTELLIGENT POWER MODULES>
PM75B5LA060
FLAT-BASE TYPE
INSULATED PACKAGE
PERFORMANCE CURVES (INVERTER PART)
COLLECTOR-EMITTER SATURATION
VOLTAGE (VS. Ic) CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT IC (A)
100
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE (sat) (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
Tj = 25°C
15V
80
13V
VD = 17V
60
40
20
0
0.5
0
1
1.5
2
VD = 15V
1.5
1
0.5
Tj = 25°C
Tj = 125°C
0
2
20
0
40
60
80
100
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE (VS. VD) CHARACTERISTICS
(TYPICAL)
2
SWITCHING TIME CHARACTERISTICS
(TYPICAL)
1
0.5
IC = 75A
Tj = 25°C
Tj = 125°C
0
12
13
14
15
17
7
5
2
tc(on)
10–1
tc(off)
7
5
VCC = 300V
VD = 15V
Tj = 25°C
2
Tj = 125°C
Inductive load
3
10–2 0
10
18
tc(off)
3
2
3
5 7 101
2
3
5 7 102
CONTROL SUPPLY VOLTAGE VD (V)
COLLECTOR CURRENT IC (A)
SWITCHING TIME CHARACTERISTICS
(TYPICAL)
SWITCHING LOSS CHARACTERISTICS
(TYPICAL)
101
SWITCHING TIME ton, toff (µs)
16
SWITCHING TIME tc(on), tc(off) (µs)
1.5
100
VCC = 300V
VD = 15V
Tj = 25°C
Tj = 125°C
Inductive load
7
5
3
2
100
toff
ton
7
5
3
2
10–1 0
10
ton
toff
2
3
5 7 101
2
3
5 7 102
COLLECTOR CURRENT IC (A)
SWITCHING LOSS ESW(on), ESW(off) (mJ/Pulse)
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE (sat) (V)
COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)
101
7
5
3
2
100
VCC = 300V
VD = 15V
Tj = 25°C
Tj = 125°C
Inductive load
ESW(on)
7
5
3 ESW(on)
2
ESW(off)
10–1
7
5
3
2
10–2 0
10
ESW(off)
2
3
5 7 101
2
3
5 7 102
COLLECTOR CURRENT IC (A)
Oct. 2005
MITSUBISHI <INTELLIGENT POWER MODULES>
PM75B5LA060
7
5
3
2
101
7
5
3
2
100
Tj = 25°C
Tj = 125°C
0
0.5
1
1.5
2
FWDi REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
101
102
7
5
7
5
3
2
3
2
VCC = 300V
VD = 15V
Tj = 25°C
Tj = 125°C
Inductive load
7
5
3
2
10–1
7
5
3
2
7
5
3
2
EMITTER-COLLECTOR VOLTAGE VEC (V)
101
100
trr
7
5
10–2 0
10
2.5
Irr
100
3
2
2
3
5 7 101
10–1
2
3
5 7 102
REVERSE RECOVERY CURRENT lrr (A)
FWDi FORWARD VOLTAGE CHARACTERISTICS
(TYPICAL)
102
VD = 15V
REVERSE RECOVERY TIME trr (µs)
COLLECTOR REVERSE CURRENT –IC (A)
FLAT-BASE TYPE
INSULATED PACKAGE
COLLECTOR CURRENT IC (A)
REVERSE RECOVERY LOSS Err (mJ/Pulse)
FWDi REVERSE RECOVERY LOSS CHARACTERISTICS
(TYPICAL)
101
7 VCC = 300V
5 VD = 15V
3
Tj = 25°C
2
Tj = 125°C
100 Inductive load
7
5
3
2
10–1
7
5
Err
3
2
10–2 0
10
2
3
5 7 101
2
3
5 7 102
COLLECTOR REVERSE CURRENT –IC (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi PART)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT PART)
100
7
5
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Zth (j – c)
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Zth (j – c)
100
3
2
10–1
7
5
3
2
10–2
7
5
3
Single Pulse
2
Per unit base = Rth(j – c)Q = 0.32°C/W
10–3 –5
10 2 3 5 710–4 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7100 2 3 5 7101
TIME (s)
7
5
3
2
10–1
7
5
3
2
10–2
7
5
3 Single Pulse
2
Per unit base = Rth(j – c)F = 0.53°C/W
10–3 –5
10 2 3 5 710–4 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7100 2 3 5 7101
TIME (s)
Oct. 2005
MITSUBISHI <INTELLIGENT POWER MODULES>
PM75B5LA060
FLAT-BASE TYPE
INSULATED PACKAGE
(CONVERTER PART)
COLLECTOR-EMITTER SATURATION
VOLTAGE (VS. Ic) CHARACTERISTICS
(TYPICAL)
COLLECTOR CURRENT IC (A)
100
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE (sat) (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
Tj = 25°C
13V
15V
80
VD = 17V
60
40
20
0
0.5
0
1
1.5
2
VD = 15V
1.5
1
0.5
Tj = 25°C
Tj = 125°C
0
2
20
0
40
60
80
100
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE (VS. VD) CHARACTERISTICS
(TYPICAL)
2
SWITCHING TIME CHARACTERISTICS
(Lower Arm · TYPICAL)
1
0.5
IC = 75A
Tj = 25°C
Tj = 125°C
0
12
13
14
15
17
18
7
5
tc(off)
3
2
tc(on)
10–1
7
5
tc(off)
VCC = 300V
3 VD = 15V
Tj = 25°C
2
Tj = 125°C
Inductive load
10–2 0
10
2 3
5 7 101
2
3
5 7 102
CONTROL SUPPLY VOLTAGE VD (V)
COLLECTOR CURRENT IC (A)
SWITCHING TIME CHARACTERISTICS
(Lower Arm · TYPICAL)
SWITCHING LOSS CHARACTERISTICS
(Lower Arm · TYPICAL)
101
SWITCHING TIME ton, toff (µs)
16
SWITCHING TIME tc(on), tc(off) (µs)
1.5
100
VCC = 300V
VD = 15V
Tj = 25°C
Tj = 125°C
Inductive load
7
5
3
2
100
toff
ton
7
5
3
toff
ton
2
10–1 0
10
2
3
5 7 101
2
3
5 7 102
COLLECTOR CURRENT IC (A)
SWITCHING LOSS ESW(on), ESW(off) (mJ/Pulse)
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE (sat) (V)
COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)
101
7
5
3
2
100
VCC = 300V
VD = 15V
Tj = 25°C
Tj = 125°C
Inductive load
ESW(on)
7
5
3
2
ESW(on)
ESW(off)
10–1
7
5
3
2
10–2 0
10
ESW(off)
2
3
5 7 101
2
3
5 7 102
COLLECTOR CURRENT IC (A)
Oct. 2005
MITSUBISHI <INTELLIGENT POWER MODULES>
PM75B5LA060
7
5
3
2
101
7
5
3
2
100
Tj = 25°C
Tj = 125°C
0
0.5
1
1.5
2
FWDi REVERSE RECOVERY CHARACTERISTICS
(Upper Arm · TYPICAL)
101
102
7
5
7
5
3
2
3
2
100
3
2
3
2
10–1
7
5
Err
3
2
10–2 0
10
2
3
5
7 101
2
3
5
3
2
100
7
5
3
2
3
2
2
3
5 7 101
10–1
2
3
5 7 102
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT PART)
100
7
5
3
2
10–1
7
5
3
2
10–2
7
5
3
Single Pulse
2
Per unit base = Rth(j – c)Q = 0.32°C/ W
10–3 –5
10 2 3 5 710–4 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7100 2 3 5 7101
7 102
FWDi FORWARD CURRENT IF (A)
TIME (s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi PART · Upper Arm)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi PART · Lower Arm)
100
100
7
5
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Zth (j – c)
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Zth (j – c)
7
5
FWDi FORWARD CURRENT IF (A)
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Zth (j – c)
REVERSE RECOVERY LOSS Err (mJ/Pulse)
7
5
101
7
5
FWDi FORWARD VOLTAGE VFM (V)
FWDi REVERSE RECOVERY LOSS CHARACTERISTICS
(Upper Arm · TYPICAL)
101
7 VCC = 300V
5 VD = 15V
3
Tj = 25°C
2
Tj = 125°C
100 Inductive load
trr
10–1
10–2 0
10
2.5
VCC = 300V
VD = 15V
Tj = 25°C
Tj = 125°C
Inductive load
Irr
7
5
REVERSE RECOVERY CURRENT lrr (A)
FWDi FORWARD VOLTAGE CHARACTERISTICS
(Upper Arm · TYPICAL)
102
VD = 15V
REVERSE RECOVERY TIME trr (µs)
FWDi FORWARD CURRENT IF (A)
FLAT-BASE TYPE
INSULATED PACKAGE
3
2
10–1
7
5
3
2
10–2
7
5
3 Single Pulse
2
Per unit base = Rth(j – c)F = 0.33°C/ W
10–3 –5
10 2 3 5 710–4 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7100 2 3 5 7101
TIME (s)
7
5
3
2
10–1
7
5
3
2
10–2
7
5
3 Single Pulse
2
Per unit base = Rth(j – c)F = 0.53°C/ W
10–3 –5
10 2 3 5 710–4 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7100 2 3 5 7101
TIME (s)
Oct. 2005