MITSUBISHI <INTELLIGENT POWER MODULES>
PM25CS1D120
FLAT-BASE TYPE
INSULATED PACKAGE
PM25CS1D120
FEATURE
Inverter + Drive & Protection IC
• 3 phase 25A/1200V CSTBTTM
(The Current senser and the thermal senser with a build-in
CSTBTTM.)
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for, shortcircuit, over-temperature & under-voltage
APPLICATION
General purpose inverter, servo drives and other motor controls
PACKAGE OUTLINES
Dimensions in mm
120
12.7
10.16
6.5
10.16
5-2.54
φ2.5
2-2.54
2-2.54
10.16
8.5
23.79
2-2.54
106 ±0.3
7
4
7
10
2-φ5.5
MOUNTING HOLES
15
U
N
P
(10)
25
V
16.5
9
5.57
W
50
67.4
39
19
19
5-M4 NUT
19
Terminal code
L A B E L
31.2
11.6
19
30
15
28
2.5
50
16.5
1
1. VWPC
2. WP
3. VWP1
4. VVPC
5. VP
6. VVP1
7. VUPC
8. UP
9. VUP1
10. VNC
11.
12.
13.
14.
15.
VN1
WN
VN
UN
Fo
May 2009
1
MITSUBISHI <INTELLIGENT POWER MODULES>
PM25CS1D120
FLAT-BASE TYPE
INSULATED PACKAGE
INTERNAL FUNCTIONS BLOCK DIAGRAM
Rfo = 1.5kΩ
VNC WN
Fo
VN1
VN
Fo Vcc
Gnd In
UN
WP
VWPC
VWP1
VP
Gnd In
Vcc
UP
VVP1
VVPC
VUP1
VUPC
Rfo
Gnd In
Gnd
Si Out
OT
Gnd
Fo Vcc
Si Out
OT
Gnd In
Gnd
Fo Vcc
Si Out
OT
N
Gnd
Si Out
Gnd In
OT
W
Gnd
V
Vcc
Si Out
OT
Gnd In
Gnd
Vcc
Si Out
U
OT
P
MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol
VCES
±IC
±ICP
PC
Tj
Parameter
Collector-Emitter Voltage
Collector Current
Collector Current (Peak)
Collector Dissipation
Junction Temperature
Condition
VD = 15V, VCIN = 15V
TC = 25°C
TC = 25°C
TC = 25°C
(Note-1)
(Note-1)
Ratings
1200
25
50
337
–20 ~ +150
Unit
V
A
A
W
°C
Ratings
Unit
20
V
20
V
20
20
V
mA
*: Tc measurement point is just under the chip.
CONTROL PART
Symbol
Parameter
VD
Supply Voltage
VCIN
Input Voltage
VFO
IFO
Fault Output Supply Voltage
Fault Output Current
Condition
Applied between : VUP1-VUPC, VVP1-VVPC
VWP1-VWPC, VN1-VNC
Applied between : UP-VUPC, VP-VVPC, WP-VWPC
UN • VN • WN-VNC
Applied between : FO-VNC
Sink current at FO terminals
May 2009
2
MITSUBISHI <INTELLIGENT POWER MODULES>
PM25CS1D120
FLAT-BASE TYPE
INSULATED PACKAGE
TOTAL SYSTEM
Parameter
Supply Voltage Protected by
VCC(PROT)
SC
VCC(surge) Supply Voltage (Surge)
Storage Temperature
Tstg
Isolation Voltage
Viso
Symbol
Ratings
Condition
VD = 13.5 ~ 16.5V
Inverter Part, Tj = +125°C Start
Applied between : P-N, Surge value
60Hz, Sinusoidal, Charged part to Base, AC 1 min.
Unit
800
V
1000
–40 ~ +125
2500
V
°C
Vrms
THERMAL RESISTANCES
Symbol
Condition
Parameter
Rth(j-c)Q
Rth(j-c)F
Junction to case Thermal
Resistances
Rth(c-f)
Contact Thermal Resistance
Inverter IGBT part (per 1 element)
Inverter FWDi part (per 1 element)
Case to fin, (per 1 module)
Thermal grease applied
(Note-1)
(Note-1)
(Note-1)
(Note-1) Tc (under the chip) measurement point is below.
arm
axis
X
Y
UP
IGBT FWDi
21.4
21.4
–4.9
4.7
VP
IGBT FWDi
65.0
65.0
–4.9
4.7
Min.
—
—
Limits
Typ.
—
—
Max.
0.37
0.59
—
—
0.046
Limits
Typ.
1.65
1.85
2.50
0.65
0.20
0.35
1.10
0.35
—
—
Max.
2.15
2.35
3.50
2.0
0.8
1.0
2.8
1.2
1
10
Unit
°C/W
(unit : mm)
WP
IGBT FWDi
90.0
90.0
–4.9
4.7
UN
IGBT FWDi
36.0
36.0
–9.9
–0.4
VN
IGBT FWDi
51.0
51.0
–9.9
–0.4
WN
IGBT FWDi
76.0
76.0
–9.9
–0.4
Bottom view
Y
X
P
N
U
V
W
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol
VCE(sat)
VEC
ton
trr
tc(on)
toff
tc(off)
ICES
Condition
Parameter
Collector-Emitter Saturation
Voltage
FWDi Forward Voltage
VD = 15V, IC = 25A
VCIN = 0V, Pulsed
(Fig. 1)
–IC = 25A, VD = 15V, VCIN = 15V
Switching Time
VD = 15V, VCIN = 0V↔15V
VCC = 600V, IC = 25A
Tj = 125°C
Inductive Load
Collector-Emitter Cutoff
Current
VCE = VCES, VD = 15V
Tj = 25°C
Tj = 125°C
(Fig. 2)
(Fig. 3,4)
(Fig. 5)
Tj = 25°C
Tj = 125°C
Min.
—
—
—
0.3
—
—
—
—
—
—
Unit
V
V
µs
mA
May 2009
3
MITSUBISHI <INTELLIGENT POWER MODULES>
PM25CS1D120
FLAT-BASE TYPE
INSULATED PACKAGE
CONTROL PART
Symbol
Parameter
Condition
VN1-VNC
V*P1-V*PC
ID
Circuit Current
VD = 15V, VCIN = 15V
Vth(ON)
Vth(OFF)
SC
Input ON Threshold Voltage
Input OFF Threshold Voltage
Short Circuit Trip Level
Short Circuit Current Delay
Time
Applied between : UP-VUPC, VP-VVPC, WP-VWPC
UN • VN • WN-VNC
(Fig. 3,6)
–20 ≤ Tj ≤ 125°C, VD = 15V
Over Temperature Protection
Detect Temperature of IGBT chip
Supply Circuit Under-Voltage
Protection
–20 ≤ Tj ≤ 125°C
Fault Output Current
VD = 15V, VCIN = 15V
(Note-2)
Minimum Fault Output Pulse
Width
VD = 15V
(Note-2)
toff(SC)
OT
OT(hys)
UV
UVr
IFO(H)
IFO(L)
tFO
(Note-2) Fault
Fault
Fault
Fault
output
output
output
output
VD = 15V
(Fig. 3,6)
Trip level
Hysteresis
Trip level
Reset level
Min.
—
—
1.2
1.7
38
Limits
Typ.
6
2
1.5
2.0
—
Max.
12
4
1.8
2.3
—
—
1.0
—
µs
135
—
11.5
—
—
—
—
20
12.0
12.5
—
10
—
—
12.5
—
0.01
15
°C
1.0
1.8
—
Min.
2.5
1.5
—
Limits
Typ.
3.0
1.7
400
Max.
3.5
2.0
—
Unit
mA
V
A
V
mA
ms
is given only when the internal SC, OT & UV protection.
of SC, OT & UV protection operate by lower arms.
of SC protection given pulse.
of OT, UV protection given pulse while over trip level.
MECHANICAL RATINGS AND CHARACTERISTICS
Condition
Parameter
Symbol
—
Mounting torque
—
Weight
Mounting part
Main terminal part
screw : M5
screw : M4
—
Unit
N•m
g
RECOMMENDED CONDITIONS FOR USE
Symbol
VCC
Parameter
Supply Voltage
VD
Control Supply Voltage
VCIN(ON)
VCIN(OFF)
fPWM
Input ON Voltage
Input OFF Voltage
PWM Input Frequency
Arm Shoot-through Blocking
Time
tdead
Condition
Applied across P-N terminals
Applied between : VUP1-VUPC, VVP1-VVPC
VWP1-VWPC, VN1-VNC
(Note-3)
Applied between : UP-VUPC, VP-VVPC, WP-VWPC
UN • VN • WN-VNC
Using Application Circuit of Fig. 8
For IPM’s each input signals
Recommended value
≤ 800
Unit
V
15.0 ± 1.5
V
(Fig. 7)
≤ 0.8
≥ 9.0
≤ 20
kHz
≥ 2.5
µs
V
(Note-3) With ripple satisfying the following conditions: dv/dt swing ≤ ±5V/µs, Variation ≤ 2V peak to peak
≤ ± 5V/µs
≤ 2V
15V
GND
May 2009
4
MITSUBISHI <INTELLIGENT POWER MODULES>
PM25CS1D120
FLAT-BASE TYPE
INSULATED PACKAGE
PRECAUTIONS FOR TESTING
1. Before applying any control supply voltage (VD), the input terminals should be pulled up by resistors, etc. to their corresponding supply voltage and each input signal should be kept off state.
After this, the specified ON and OFF level setting for each input signal should be done.
2. When performing “SC” tests, the turn-off surge voltage spike at the corresponding protection operation should not be allowed to rise above VCES rating of the device.
(These test should not be done by using a curve tracer or its equivalent.)
P, (U,V,W)
IN
Fo
VCIN
P, (U,V,W)
Ic
V
IN
Fo
VCIN
–Ic
V
(15V)
(0V)
U,V,W, (N)
VD (all)
U,V,W, (N)
VD (all)
Fig. 1 VCE(sat) Test
Fig. 2 VEC, (VFM) Test
a) Lower Arm Switching
P
VCIN
(15V)
trr
Signal input
(Upper Arm)
CS
Ic
Irr
Vcc
Fo
Signal input
(Lower Arm)
VCIN
VCE
U,V,W
90%
90%
N
VD (all)
b) Upper Arm Switching
Ic
10%
Signal input
(Upper Arm)
VCIN
10%
10%
tc(off)
VCIN
U,V,W
CS
VCIN
(15V)
10%
tc(on)
P
Vcc
td(on)
tr
tf
td(off)
Fo
Signal input
(Lower Arm)
(ton = td(on) + tr)
(toff = td(off) + tf)
N
Ic
VD (all)
Fig. 3 Switching time and SC test circuit
Fig. 4 Switching time test waveform
VCIN
Short Circuit Current
P, (U,V,W)
A
VCIN
(15V)
Constant Current
IN
Fo
SC Trip
Pulse VCE
Ic
VD (all)
U,V,W, (N)
Fo
toff(SC)
Fig. 5 ICES Test
Fig. 6 SC test waveform
IPM’ input signal VCIN
(Upper Arm)
0V
2V
1.5V
0V
IPM’ input signal VCIN
(Lower Arm)
2V
1.5V
1.5V
tdead
2V
tdead
t
t
tdead
1.5V: Input on threshold voltage Vth(on) typical value, 2V: Input off threshold voltage Vth(off) typical value
Fig. 7 Dead time measurement point example
May 2009
5
MITSUBISHI <INTELLIGENT POWER MODULES>
PM25CS1D120
FLAT-BASE TYPE
INSULATED PACKAGE
P
20kΩ ≥10µ
VUP1
VD
IF
OT
OUT
Vcc
→
+
–
Si
UP
In
VUPC
U
GND GND
≥0.1µ
VVP1
VD
Si
VP
In
VVPC
V
GND GND
VWP1
VD
OT
OUT
Vcc
OT
OUT
Vcc
Si
WP
In
VWPC
W
GND GND
20kΩ
→
OT
Vcc
≥10µ
OUT
Si
Fo
IF
UN
In
N
GND GND
≥0.1µ
20kΩ
→
M
OT
Vcc
≥10µ
IF
OUT
Si
Fo
VN
In
GND GND
≥0.1µ
20kΩ
→
VD
IF
1kΩ
OUT
Si
Fo
In
GND GND
VNC
Fo
OT
Vcc
WN
≥0.1µ
5V
VN1
≥10µ
Rfo
: Interface which is the same as U-phase
Fig. 8 Application Example Circuit
NOTES FOR STABLE AND SAFE OPERATION ;
Design the PCB pattern to minimize wiring length between opto-coupler and IPM’s input terminal, and also to minimize the
stray capacity between the input and output wirings of opto-coupler.
Connect low impedance capacitor between the Vcc and GND terminal of each fast switching opto-coupler.
Fast switching opto-couplers: tPLH, tPHL ≤ 0.8µs, Use High CMR type.
Slow switching opto-coupler: CTR > 100%
Use 4 isolated control power supplies (VD). Also, care should be taken to minimize the instantaneous voltage charge of the
power supply.
Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between P and N
terminal.
Use line noise filter capacitor (ex. 4.7nF) between each input AC line and ground to reject common-mode noise from AC line
and improve noise immunity of the system.
•
•
•
•
•
•
•
May 2009
6
MITSUBISHI <INTELLIGENT POWER MODULES>
PM25CS1D120
FLAT-BASE TYPE
INSULATED PACKAGE
PERFORMANCE CURVES
COLLECTOR-EMITTER SATURATION
VOLTAGE (VS. Ic) CHARACTERISTICS
(TYPICAL)
VD = 17V
25
13V
20
15
10
5
0
0.5
1.0
1.5
2.5
2.0
1.5
1.0
0.5
Tj = 25°C
Tj = 125°C
0
2.0
VD = 15V
0
5
10
15
20
25
30
35
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION
VOLTAGE (VS. VD) CHARACTERISTICS
(TYPICAL)
DIODE FORWARD CHARACTERISTICS
(TYPICAL)
COLLECTOR RECOVERY CURRENT –IC (A)
COLLECTOR-EMITTER VOLTAGE VCE(sat) (V)
2.4
2.2
2.0
1.8
1.6
1.4
IC = 25A
Tj = 25°C
Tj = 125°C
1.2
1.0
12
SWITCHING TIME ton, toff (µs)
15V
30
0
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE(sat) (V)
Tj = 25°C
13
14
15
16
17
18
102
VD = 15V
7
5
4
3
2
101
7
5
4
3
2
100
Tj = 25°C
Tj = 125°C
0
0.5
1.0
1.5
2.0
2.5
3.0
CONTROL POWER SUPPLY VOLTAGE VD (V)
EMITTER-COLLECTOR VOLTAGE VEC (V)
SWITCHING TIME (ton, toff) CHARACTERISTICS
(TYPICAL)
101
VCC = 600V
7
VD = 15V
5
Tj = 25°C
4
Tj = 125°C
3
Inductive load
SWITCHING TIME (tc(on), tc(off)) CHARACTERISTICS
(TYPICAL)
101
VCC = 600V
7
VD = 15V
5
Tj = 25°C
4
Tj = 125°C
3
Inductive load
SWITCHING TIME tc(on), tc(off) (µs)
COLLECTOR CURRENT IC (A)
35
COLLECTOR-EMITTER
SATURATION VOLTAGE VCE(sat) (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
2
toff
100
7
5
4
3
ton
2
10–1 0
10
2
3 4 5 7 101
2
2
100 tc(off)
7
5
4
3
2
tc(on)
10–1 0
10
3 4 5 7 102
COLLECTOR CURRENT IC (A)
2
3 4 5 7 101
2
3 4 5 7 102
COLLECTOR CURRENT IC (A)
May 2009
7
MITSUBISHI <INTELLIGENT POWER MODULES>
PM25CS1D120
1.5
Eoff
1.0
0.5
DIODE REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
1.0
25
VCC = 600V
0.9 VD = 15V
Tj = 25°C
0.8
20
Tj = 125°C
0.7 Inductive load
0.6
15
0.5
Irr
0.4
10
0.3
5
0.2
trr
0.1
0
0
5
10
15
20
25
0
30
5
0
10
15
20
25
0
30
COLLECTOR RECOVERY CURRENT –IC (A)
SWITCHING RECOVERY LOSS CHARACTERISTICS
(TYPICAL)
1.8
VCC = 600V
1.6 VD = 15V
Tj = 25°C
1.4
Tj = 125°C
1.2 Inductive load
ID VS. fc CHARACTERISTICS
(TYPICAL)
25.0
VD = 15V
Tj = 25°C
Tj = 125°C
ID (mA)
20.0
1.0
0.8
N-side
15.0
10.0
0.6
P-side
0.4
5.0
0.2
0
0
5
10
15
20
25
0
30
0
5
10
15
20
25
COLLECTOR RECOVERY CURRENT –IC (A)
fc (kHz)
UV TRIP LEVEL VS. Tj CHARACTERISTICS
(TYPICAL)
20
UVt
18
UVr
16
SC TRIP LEVEL VS. Tj CHARACTERISTICS
(TYPICAL)
2.0
VD = 15V
1.8
14
1.4
12
1.2
1.6
SC
SWITCHING LOSS Err (mJ/pulse)
COLLECTOR CURRENT IC (A)
UVt /UVr
RECOVERY CURRENT lrr (A)
SWITCHING LOSS CHARACTERISTICS
(TYPICAL)
3.0
VCC = 600V
VD = 15V
Eon
2.5
Tj = 25°C
Tj = 125°C
2.0 Inductive load
RECOVERY TIME trr (µs)
SWITCHING LOSS Eon, Eoff (mJ/pulse)
FLAT-BASE TYPE
INSULATED PACKAGE
10
1.0
8
0.8
6
0.6
4
0.4
2
0.2
0
–50
0
50
100
0
–50
150
Tj (°C)
0
50
100
150
Tj (°C)
May 2009
8
MITSUBISHI <INTELLIGENT POWER MODULES>
PM25CS1D120
FLAT-BASE TYPE
INSULATED PACKAGE
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(TYPICAL)
NORMALIZED TRANSIENT
THERMAL IMPEDANCE Zth(j-c)
100
7
5
3
2
10–1
7
5
3
2
10–2 Single Pulse
7
5 IGBT part;
3 Per unit base = Rth(j-c)Q = 0.37°C/ W
2 FWDi part;
Per unit base = Rth(j-c)F = 0.59°C/ W
10–3 –5
10 2 3 5 710–4 2 3 5 710–32 3 5 710–2 2 3 5 710–12 3 5 7100 2 3 5 7101
May 2009
9