BSS84PW
SIPMOS  Small-Signal-Transistor
Features
Product Summary
· P-Channel
·
Enhancement mode
· Avalanche rated
· Logic Level
· dv/dt rated
Drain source voltage
VDS
Drain-source on-state resistance
RDS(on)
Continuous drain current
ID
-60
V
8
W
-0.15
A
3
2
• Qualified according to AEC Q101
1
• Halogen-free according to IEC61249-2-21
Marking
Tape and Reel
Type
Package
BSS84PW
PG-SOT-323 H6327:3000pcs/r.
YBs
VSO05561
Pin 1
PIN 2
PIN 3
G
S
D
Maximum Ratings,at T j = 25 °C, unless otherwise specified
Symbol
Parameter
Value
Unit
Continuous drain current
-0.15
A
ID
T A = 25 °C
ID puls
-0.6
Avalanche energy, single pulse
EAS
2.61
Avalanche energy, periodic limited by Tjmax
Reverse diode dv/dt
EAR
0.03
dv/dt
6
Gate source voltage
VGS
±20
V
Power dissipation
Ptot
0.3
W
-55...+150
°C
Pulsed drain current
T A = 25 °C
I D = -0.15 A , V DD = -25 V, RGS = 25 W
mJ
kV/µs
I S = -0.15 A, V DS = -48 V, di/dt = 200 A/µs,
T jmax = 150 °C
T A = 25 °C
Operating and storage temperature
Tj , Tstg
55/150/56
IEC climatic category; DIN IEC 68-1
ESD Class
JESF22-A114-HBM
Rev 2.0
Class 0
Page 1
2016-06-21
BSS84PW
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
-
-
110
@ min. footprint
-
-
420
@ 6 cm 2 cooling area 1)
-
-
350
Characteristics
Thermal resistance, junction - soldering point
RthJS
K/W
(Pin 3)
SMD version, device on PCB:
RthJA
Electrical Characteristics, at T j = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
V(BR)DSS
-60
-
-
Gate threshold voltage, VGS = VDS
I D = -20 µA
VGS(th)
-1
-1.5
-2
Zero gate voltage drain current
IDSS
Static Characteristics
Drain-source breakdown voltage
V
VGS = 0 V, I D = -250 µA
µA
VDS = -60 V, V GS = 0 V, T j = 25 °C
-
-0.1
-1
VDS = -60 V, V GS = 0 V, T j = 125 °C
-
-10
-100
IGSS
-
-10
-100
nA
RDS(on)
-
10.5
25
W
RDS(on)
-
6.9
12
RDS(on)
-
4.6
8
Gate-source leakage current
VGS = -20 V, VDS = 0 V
Drain-source on-state resistance
VGS = -2.7 V, I D = -0.01 A
Drain-source on-state resistance
VGS = -4.5 V, I D = -0.12 A
Drain-source on-state resistance
VGS = -10 V, ID = -0.15 A
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Rev 2.0
Page 2
2016-06-21
BSS84PW
Electrical Characteristics, at T j = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
0.08
0.16
-
S
pF
Dynamic Characteristics
Transconductance
g fs
V DS£2*ID*R DS(on)max ,
ID=0.15A
Input capacitance
Ciss
V GS=0V, VDS=-25V,
-
15.3
19.1
Output capacitance
Coss
f=1MHz
-
5.8
7.3
Reverse transfer capacitance
Crss
-
3
3.8
Turn-on delay time
t d(on)
-
6.7
10
Rise time
tr
-
16.2
24.3
Turn-off delay time
t d(off)
-
8.6
12.9
Fall time
tf
-
20.5
30.8
-
0.25
0.38
-
0.3
0.45
-
1
1.5
V(plateau) V DD=-48V, ID=-0.15A
-
-3.4
-
IS
-
-
-
-
V DD=-30V, V GS=-4.5V,
ID=-0.12A, RG=25W
ns
Gate Charge Characteristics
Gate to source charge
Q gs
Gate to drain charge
Q gd
Gate charge total
Qg
V DD=-48V, I D=-0.15A
V DD=-48V, I D=-0.15A,
nC
V GS=0 to -10V
Gate plateau voltage
V
Reverse Diode
Inverse diode continuous
T A=25°C
-0.15 A
forward current
Inverse diode direct current,
I SM
-0.6
pulsed
Inverse diode forward voltage
VSD
V GS=0V, IF=-0.15A
-
-0.84
-1.12 V
Reverse recovery time
t rr
V R=-30V, I F=l S,
-
23.6
35.4
ns
Reverse recovery charge
Q rr
diF/dt=100A/µs
-
11.6
17.4
nC
Rev 2.0
Page 3
2016-06-21
BSS84PW
Power Dissipation
Drain current
Ptot = f (TA)
ID = f (TA )
parameter: VGS ³ 10 V
BSS84PW
0.32
-0.16
W
A
0.24
-0.12
0.20
-0.10
ID
Ptot
BSS84PW
0.16
-0.08
0.12
-0.06
0.08
-0.04
0.04
-0.02
0.00
0
20
40
60
80
100
120
°C
0.00
0
160
20
40
60
80
100
120
TA
TA
Safe operating area
Transient thermal impedance
I D = f ( V DS )
ZthJA = f (tp )
parameter : D = 0 , T A = 25 °C
parameter : D = tp /T
1 BSS84PW
-10
160
°C
10 3
BSS84PW
A
K/W
-10 0
Z thJC
tp = 40.0µs
ID
100 µs
/I D
-10
=
-1
RD
S(
on
V
1 ms
DS
)
10 2
10 ms
D = 0.50
0.20
10
1
0.10
0.05
-10 -2
0.02
single pulse
DC
-10 -3 -1
-10
-10
0
-10
1
V
-10
2
VDS
Rev 2.0
10 0 -5
-4
-3
-2
-1
0
10
10
10
10
10
10
0.01
10
1
s
10
3
tp
Page 4
2016-06-21
BSS84PW
Typ. output characteristic
Typ. drain-source-on-resistance
I D = f (VDS); T j=25°C
parameter: tp = 80 µs
RDS(on) = f (ID )
parameter: VGS
BSS84PW
BSS84PW
26
Ptot = 0W
A
g f
W
VGS [V]
a
-2.5
e
-0.28
d
ID
-0.24
-0.20
-0.16
b
-3.0
c
-3.5
d
-4.0
e
-4.5
f
-5.0
g
-6.0
a
b
c
d
22
20
RDS(on)
-0.36
18
16
14
12
c
10
-0.12
8
6
b
-0.08
4
-0.04
2
a
0.00
0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V
e
g
VGS [V] =
a
b
c
d
e
f
-2.5 -3.0 -3.5 -4.0 -4.5 -5.0
g
-6.0
0
0.00 -0.04 -0.08 -0.12 -0.16 -0.20 -0.24 A
-5.0
f
VDS
-0.30
ID
Typ. transfer characteristics I D= f ( V GS )
Typ. forward transconductance
VDS³ 2 x I D x RDS(on)max
gfs = f(ID ); Tj=25°C
parameter: tp = 80 µs
parameter: gfs
-0.30
0.22
S
A
0.18
gfs
ID
0.16
-0.20
0.14
0.12
-0.15
0.10
0.08
-0.10
0.06
0.04
-0.05
0.02
0.00
0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0
Rev 2.0
V -5.0
VGS
Page 5
0.00
0.00 -0.05 -0.10 -0.15 -0.20 -0.25 -0.30
A -0.40
ID
2016-06-21
BSS84PW
Drain-source on-resistance
Gate threshold voltage
RDS(on) = f(Tj)
VGS(th) = f (Tj)
parameter: ID = -0.17A, V GS = -10 V
parameter: VGS = VDS , ID = -20 µA
-2.5
16
W
12
V GS(th)
RDS(on)
V
max.
10
max.
-1.5
typ.
-1.0
min.
8
6
typ.
4
-0.5
2
0
-60
-20
20
60
100
0.0
-60
160
°C
Tj
-20
20
60
100
180
°C
Tj
Typ. capacitances
Forward characteristics of reverse diode
C = f(VDS)
IF = f (VSD )
Parameter: VGS=0 V, f=1 MHz
parameter: Tj , tp = 80 µs
10
2
-10 0
BSS84PW
A
pF
-10 -1
C
IF
Ciss
10 1
Coss
Crss
-10 -2
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
10 0
0
-5
-10
-15
-20
V
-30
VDS
Rev 2.0
-10 -3
0.0
-0.4
-0.8
-1.2
-1.6
-2.0
-2.4 V
-3.0
VSD
Page 6
2016-06-21
BSS84PW
Avalanche energy
Typ. gate charge
EAS = f (Tj)
VGS = f (QGate )
parameter: ID = -0.15 A pulsed
W
par.: ID = -0.15 A , VDD = -25 V, R GS = 25
BSS84PW
3.0
-16
V
mJ
VGS
E AS
-12
2.0
1.5
-10
0,2 VDS max
0,8 VDS max
-8
-6
1.0
-4
0.5
-2
0.0
25
45
65
85
105
125
165
°C
Tj
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2 nC
1.5
Q Gate
Drain-source breakdown voltage
V(BR)DSS = f (Tj)
BSS84PW
-72
V(BR)DSS
V
-68
-66
-64
-62
-60
-58
-56
-54
-60
-20
20
60
100
°C
180
Tj
Rev 2.0
Page 7
2016-06-21
BSS84PW
Package Outline SOT-323
Footprint
Soldering type: Reflow soldering
Soldering type: Wave soldering
Tape and Reel
Rev 2.0
Page 8
2016-06-21
-60VSIPMOSSmallSignalTransistor
BSS84PW
RevisionHistory
BSS84PW
Revision:2016-06-27,Rev.2.0
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.0
2016-06-27
Release of final version
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©2016InfineonTechnologiesAG
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Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With
respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
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TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
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reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.
9
Rev.2.0,2016-06-27