TLV271
Single-Channel, Rail-to-Rail
Output, 3 MHz BW
Operational Amplifier
The TLV271 operational amplifier provides rail−to−rail output
operation. The output can swing within 320 mV to the positive rail and
50 mV to the negative rail. This rail−to−rail operation enables the user
to make optimal use of the entire supply voltage range while taking
advantage of 3 MHz bandwidth. The TLV271 can operate on supply
voltage as low as 2.7 V over the temperature range of −40°C to 105°C.
The high bandwidth provides a slew rate of 2.4 V/ms while only
consuming 550 mA of quiescent current. Likewise the TLV271 can run
on a supply voltage as high as 16 V making it ideal for a broad range of
battery−operated applications. Since this is a CMOS device it has high
input impedance and low bias currents making it ideal for interfacing
to a wide variety of signal sensors. In addition it comes in a small
TSOP−5 package with two pinout styles allowing for use in
high−density PCB’s.
Features
•
•
•
•
•
•
•
•
•
Rail−To−Rail Output
Wide Bandwidth: 3 MHz
High Slew Rate: 2.4 V/ms
Wide Power−Supply Range: 2.7 V to 16 V
Low Supply Current: 550 mA
Low Input Bias Current: 45 pA
Wide Temperature Range: −40°C to 105°C
Small Package: 5 Pin TSOP−5 (same as SOT23−5)
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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MARKING
DIAGRAM
TSOP−5
(SOT23−5)
SN SUFFIX
CASE 483
5
1
5
XXXAYWG
G
1
XXX
= ADG (TLV271SN1T1G)
= ADH (TLV271SN2T1G)
A
= Assembly Location
Y
= Year
W
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
PIN CONNECTIONS
5 VEE
OUT 1
VDD 2
IN+
3
+ −
4 IN−
Style 1 Pinout (SN1T1)
(Top View)
Applications
5 VDD
OUT 1
• Notebook Computers
• Portable Instruments
VEE 2
IN+
3
+ −
4 IN−
Style 2 Pinout (SN2T1)
(Top View)
ORDERING INFORMATION
Package
Shipping†
TLV271SN1T1G
(Style 1 Pinout)
TSOP−5
(Pb−Free)
3000 /
Tape & Reel
TLV271SN2T1G
(Style 2 Pinout)
TSOP−5
(Pb−Free)
3000 /
Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
September, 2013 − Rev. 4
1
Publication Order Number:
TLV271/D
TLV271
MAXIMUM RATINGS
Symbol
Rating
Value
Unit
16.5
V
Input Differential Voltage (Note 2)
$Supply Voltage
V
VI
Input Common Mode Voltage Range (Note 1)
−0.2 V to (VDD +
0.2 V)
V
II
Maximum Input Current
$10
mA
IO
Output Current Range
$100
mA
Continuous Total Power Dissipation (Note 1)
200
mW
TJ
Maximum Junction Temperature
150
°C
VDD
Supply Voltage (Note 1)
VID
qJA
Thermal Resistance
333
°C/W
Tstg
Operating Temperature Range (free−air)
−40 to 105
°C
Tstg
Storage Temperature
−65 to 150
°C
260
°C
Mounting Temperature (Infrared or Convection − 20 sec)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may
affect device reliability.
1. Continuous short−circuit operation to ground at elevated ambient temperature can result in exceeding the maximum allowed junction
temperature of 150°C. Output currents in excess of 45 mA over long term may adversely affect reliability. Shorting output to either V+
or V− will adversely affect reliability.
2. ESD data available upon request.
DC ELECTRICAL CHARACTERISTICS (VDD = 2.7V, 3.3V, 5V & $5 V (Note 3), TA = 25°C, RL w 10 kW unless otherwise noted)
Parameter
Symbol
Input Offset Voltage
VIO
Conditions
Min
VIC = VDD/2, VO = VDD/2, RL = 10 kW, RS = 50 W
Typ
Max
Unit
0.5
5
mV
TA = −40°C to +105°C
7
Offset Voltage Drift
ICVOS
VIC = VDD/2, VO = VDD/2, RL = 10 kW, RS = 50 W
Common Mode
Rejection Ratio
CMRR
0 V v VIC v VDD − 1.35 V, RS = 50 W
VDD = 2.7 V
TA = −40°C to +105°C
VDD = 5 V
TA = −40°C to +105°C
Large Signal
Voltage Gain
AVD
VDD = $5 V
69
66
VDD = 2.7 V to 16 V, VIC = VDD/2, No Load
70
TA = −40°C to +105°C
65
VDD = 2.7 V
VO(pp) = VDD/2, RL = 10 kW
TA = −40°C to +105°C
dB
130
97
140
135
dB
106
dB
76
VDD = 3.3 V
97
VDD = 5 V
100
TA = −40°C to +105°C
123
76
VO(pp) = VDD/2, RL = 10 kW
TA = −40°C to +105°C
127
86
VDD = $5 V
VO(pp) = VDD/2, RL = 10 kW
TA = −40°C to +105°C
IB
65
TA = −40°C to +105°C
VO(pp) = VDD/2, RL = 10 kW
Input Bias Current
mV/°C
62
0 V v VIC v VDD − 1.35 V, RS = 50 W
PSRR
2
70
55
0 V v VIC v VDD − 1.35 V, RS = 50 W
Power Supply
Rejection Ratio
58
100
130
90
VDD = 5 V, VIC = VDD/2, VO = VDD/2,
RS = 50 W
3. VDD = ±5 V is shorthand for VDD = +5 V and VEE = −5 V.
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2
TA = 25°C
TA = 105°C
45
150
1000
pA
TLV271
DC ELECTRICAL CHARACTERISTICS (VDD = 2.7V, 3.3V, 5V & $5 V (Note 3), TA = 25°C, RL w 10 kW unless otherwise noted)
Parameter
Symbol
Input Offset Current
IIO
Conditions
VDD = 5 V, VIC = VDD/2, VO = VDD/2,
RS = 50 W
Differential Input
Resistance
ri(d)
Common−mode
Input Capacitance
CIC
f = 21 kHz
Output Swing
(High−level)
VOH
VIC = VDD/2, IOH = −1 mA
Min
TA = 25°C
TA = −40°C to +105°C
Unit
45
150
pA
1000
2.55
1000
GW
8
pF
2.58
V
2.48
VDD = 3.3 V
TA = −40°C to +105°C
3.15
3.21
3.00
VDD = 5 V
VIC = VDD/2, IOH = −1 mA
TA = −40°C to +105°C
4.8
4.93
4.75
VDD = $5 V
VIC = VDD/2, IOH = −1 mA
TA = −40°C to +105°C
4.92
4.96
4.9
VDD = 2.7 V
VIC = VDD/2, IOH = −5 mA
TA = −40°C to +105°C
1.9
V
2.1
1.5
VDD = 3.3 V
VIC = VDD/2, IOH = −5 mA
TA = −40°C to +105°C
2.5
2.89
2.1
VDD = 5 V
VIC = VDD/2, IOH = −5 mA
TA = −40°C to +105°C
4.5
4.68
4.35
VDD = $5 V
VIC = VDD/2, IOH = −5 mA
TA = −40°C to +105°C
VOL
Max
TA = 105°C
VDD = 2.7 V
VIC = VDD/2, IOH = −1 mA
Output Swing
(Low−level)
Typ
4.7
4.78
4.65
VDD = 2.7 V
VIC = VDD/2, IOL = −1 mA
0.1
TA = −40°C to +105°C
0.15
V
0.22
VDD = 3.3 V
VIC = VDD/2, IOL = −1 mA
0.03
TA = −40°C to +105°C
0.15
0.22
VDD = 5 V
VIC = VDD/2, IOL = −1 mA
0.03
TA = −40°C to +105°C
0.1
0.15
VDD = $5 V
VIC = VDD/2, IOL = −1 mA
0.05
TA = −40°C to +105°C
0.08
0.1
VIC = VDD/2, IOL = −5 mA
VDD = 2.7 V
0.5
VDD = 3.3 V
0.13
TA = −40°C to +105°C
0.7
1.1
VIC = VDD/2, IOL = −5 mA
TA = −40°C to +105°C
0.7
1.1
VDD = 5 V
VIC = VDD/2, IOL = −5 mA
0.13
TA = −40°C to +105°C
0.4
0.5
VDD = $5 V
VIC = VDD/2, IOL = −5 mA
TA = −40°C to +105°C
0.16
0.3
0.35
3. VDD = ±5 V is shorthand for VDD = +5 V and VEE = −5 V.
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3
V
TLV271
DC ELECTRICAL CHARACTERISTICS (VDD = 2.7V, 3.3V, 5V & $5 V (Note 3), TA = 25°C, RL w 10 kW unless otherwise noted)
Parameter
Symbol
Output Current
IO
Conditions
VO = 0.5 V from rail, VDD = 2.7 V
VO = 0.5 V from rail, VDD = 5 V
VO = 0.5 V from rail, VDD = 10 V
Power Supply
Quiescent Current
IDD
VO = VDD/2
Min
Typ
Positive rail
4.0
Negative rail
5.0
Positive rail
7.0
Negative rail
8.0
Positive rail
13
Max
mA
Negative rail
12
VDD = 2.7 V
380
560
VDD = 3.3 V
385
620
VDD = 5 V
390
660
VDD = 10 V
400
800
TA = −40°C to +105°C
Unit
mA
1000
3. VDD = ±5 V is shorthand for VDD = +5 V and VEE = −5 V.
AC ELECTRICAL CHARACTERISTICS (VDD = 2.7 V, 5 V, & $5 V (Note 4), TA = 25°C, and RL w 10 kW unless otherwise noted)
Parameter
Symbol
Unity Gain
Bandwidth
UGBW
Slew Rate at Unity
Gain
SR
Conditions
RL = 2 kW, CL = 10 pF
VO(pp) = VDD/2, RL = 10 kW, CL = 50 pF
Min
VDD = 2.7 V
3.2
VDD = 5 V to
10 V
3.5
VDD = 2.7 V
TA = −40°C to +105°C
VDD = 5 V
TA = −40°C to +105°C
VDD = $5 V
TA = −40°C to +105°C
Gain Margin
Settling Time to
0.1%
Total Harmonic
Distortion plus
Noise
tS
THD+N
en
Input−Referred
Current Noise
in
MHz
V/mS
1.45
2.3
1.8
2.6
1.3
RL = 2 kW, CL = 10 pF
45
°
RL = 2 kW, CL = 10 pF
14
dB
mS
V−step(pp) = 1 V, AV = −1, RL = 2 kW,
CL = 10 pF
VDD = 2.7 V
2.9
V−step(pp) = 1 V, AV = −1, RL = 2 kW,
CL = 47 pF
VDD = 5 V,
$5 V
2.0
AV = 1
0.004
AV = 10
0.04
VDD = 2.7 V, VO(pp) = VDD/2, RL = 2 kW,
f = 10 kHz
VDD = 5 V, $ 5 V, VO(pp) = VDD/2, RL =
2 kW, f = 10 kHz
Input−Referred
Voltage Noise
2.1
Unit
1.2
VO(pp) = VDD/2, RL = 10 kW, CL = 50 pF
qm
1.35
Max
1
VO(pp) = VDD/2, RL = 10 kW, CL = 50 pF
Phase Margin
Typ
AV = 100
0.3
AV = 1
0.004
AV = 10
0.04
AV = 100
0.03
f = 1 kHz
30
f = 10 kHz
20
f = 1 kHz
0.6
4. VDD = ±5 V is shorthand for VDD = +5 V and VEE = −5 V.
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4
%
nV/√Hz
fA/√Hz
0
RL = 2 kW
25°C
−10
−20
−40
−50
2.5 V
−60
5V
2.7 V
−70
−80
−90
10 V
10
LOW LEVEL OUTPUT VOLTAGE (V)
2.5
100
1k
10k
100k
1M
150
100
0
−100
−40 −25 −10
5
20 35
50
65
2.5
25°C
1.5
−40°C
1
0.5
0
20
30
40
50
60
70
VDD = 2.5 V
2
−40°C
1.5
25°C
105°C
1
0.5
0
80
0
10
20
30
40
50
LOW LEVEL OUTPUT CURRENT (mA)
Figure 3. 2.5 V VOL vs. Iout
Figure 4. 2.5 V VOH vs. Iout
3.3
HIGH LEVEL OUTPUT VOLTAGE (V)
25°C
2.7
105°C
2.4
2.1
1.8
−40°C
1.5
1.2
0.9
0.6
0.3
0
60
LOW LEVEL OUTPUT CURRENT (mA)
VDD = 3.3 V
3
80 95 110 125
FREE AIR TEMPERATURE (°C)
3.3
LOW LEVEL OUTPUT VOLTAGE (V)
Input Offset
−50
Figure 2. Input Bias and Offset Current vs.
Temperature
105°C
0
Input Bias
50
FREQUENCY (Hz)
2
10
200
Figure 1. CMRR vs. Frequency
VDD = 2.5 V
0
250
HIGH LEVEL OUTPUT VOLTAGE (V)
CMRR (dB)
−30
INPUT BIAS AND OFFSET CURRENT (pA)
TLV271
10
20
30
40
50
60
70
80
90
80
VDD = 3.3 V
3
2.7
2.4
105°C
2.1
1.8
1.5
25°C
1.2
0.9
−40°C
0.6
0.3
0
0
10
20
30
40
50
60
70
HIGH LEVEL OUTPUT CURRENT (mA)
LOW LEVEL OUTPUT CURRENT (mA)
Figure 5. 3.3 V VOL vs. Iout
Figure 6. 3.3 V VOH vs. Iout
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5
70
80
90
TLV271
HIGH LEVEL OUTPUT VOLTAGE (V)
105°C
4
3
−40°C
25°C
2
1
0
0
10
LOW LEVEL OUTPUT VOLTAGE (V)
5
VDD = 5.0 V
10
20
30
40
50
60
70
25°C
105°C
1
0
0
10
20
30
40
50
60
70
Figure 7. VOL vs. Iout
Figure 8. VOH vs. Iout
10
7
6
105°C
5
4
25°C
3
2
1
−40°C
0
10
20
30
40
50
60
70
80
80
VDD = 10 V
9
8
7
6
25°C
5
4
−40°C
3
105°C
2
1
0
0
10
20
30
40
50
60 70 80
90
100 110 120
LOW LEVEL OUTPUT CURRENT (mA)
HIGH LEVEL OUTPUT CURRENT (mA)
Figure 9. 10 V VOL vs. Iout
Figure 10. 10 V VOH vs. Iout
600
12
AV = 10
RL = 2k
CL = 10 pF
TA = 25°C
THD = 5%
VDD = 10 V
10
9
8
105°C
SUPPLY CURRENT / Ch (mA)
11
Vout P−P (V)
−40°C
2
HIGH LEVEL OUTPUT CURRENT (mA)
8
0
3
LOW LEVEL OUTPUT CURRENT (mA)
VDD = 10 V
9
VDD = 5.0 V
4
80
HIGH LEVEL OUTPUT VOLTAGE (V)
LOW LEVEL OUTPUT VOLTAGE (V)
5
7
6
VDD = 5 V
5
4
3
VDD = 2.7 V
2
VDD = 2.5 V
1
0
0.01
500
25°C
400
−40°C
300
200
100
0
0.1
1
10
100
1k
10k
0
2
4
6
8
10
12
14
16
FREQUENCY (kHz)
SUPPLY VOLTAGE (V)
Figure 11. Peak−to−Peak Output vs. Supply vs.
Frequency
Figure 12. Supply Current vs. Supply Voltage
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6
18
TLV271
0
RL = 2 kW,
Input = 200 mVpp,
AV = 1,
VDD = 2.5 V to 10 V,
TA = 25°C
−10
−20
PSRR (dB)
−30
−40
−50
−60
−70
−80
−90
−100
−110
100
1k
10k
100k
FREQUENCY (Hz)
Figure 13. PSRR vs. Frequency
140
180
OPEN LOOP GAIN (dB)
100
80
Gain
10 V
60
40
Gain
5V
20
135
Phase
5V
90
Phase
10 V
45
Gain
2.7 V
0
−20
1
10
100
1k
10k
100k
PHASE MARGIN (°C)
Phase
2.7 V
120
0
10M
1M
FREQUENCY (Hz)
Figure 14. Open Loop Gain and Phase vs.
Frequency
4.5
4
10 V
5V
3.5
3
2.7 V
2.5
2
−40
2.5 V
3
2
SR− @ 25°C
SR− @ −40°C
1
SR+ @ −40°C
RL = 2k
CL = 10 pF
−20
SR+ @ 105°C
SR− @ 105°C
SLEW RATE (V/ms)
FREQUENCY (MHz)
4
SR+ @ 25°C
0
20
40
60
80
100
0
0
0.5
1
1.5
2
2.5
3
TEMPERATURE (°C)
SUPPLY VOLTAGE (V)
Figure 15. Gain Bandwidth Product vs.
Temperature
Figure 16. Slew Rate vs. Supply Voltage
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3.5
TLV271
4
SR+ 10 V
VOLTAGE NOISE (nV√Hz)
SLEW RATE (V/ms)
SR− 10 V
10k
SR+ 5 V
SR− 5 V
3
SR+ 2.7 V
2
1
SR− 2.7 V
VS = ±2.5 V
Vin = GND,
Av = 22 RTI
1k
100
10
1
−60
−40 −20
0
20
40
60
80
100
120
1
10
100
1k
10k
FREE AIR TEMPERATURE (°C)
FREQUENCY (Hz)
Figure 17. Slew Rate vs. Temperature
Figure 18. Voltage Noise vs. Frequency
VS = ±1.25 V
Av = −1
RL = 2 kW
100k
250 mV/div
250 mV/div
VS = +2.5 V
Av = +1
RL = 2 kW
VS = ±1.25 V
Av = −1
RL = 2 kW
VS = +2.5 V
Av = +1
RL = 2 kW
25 mV/div
500 ns/div
Figure 20. 2.5 V Non−Inverting Large Signal
Pulse Response
25 mV/div
500 ns/div
Figure 19. 2.5 V Inverting Large Signal Pulse
Response
500 ns/div
500 ns/div
Figure 21. 2.5 V Inverting Small Signal Pulse
Response
Figure 22. 2.5 V Non−Inverting Small Signal
Pulse Response
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TLV271
VS = +3 V
Av = +1
RL = 2 kW
250 mV/div
250 mV/div
VS = ±1.5 V
Av = −1
RL = 2 kW
Figure 23. 3 V Inverting Large Signal Pulse
Response
Figure 24. 3 V Non−Inverting Large Signal
Pulse Response
VS = ±1.5 V
Av = −1
RL = 2 kW
VS = +3 V
Av = +1
RL = 2 kW
25 mV/div
500 ns/div
25 mV/div
500 ns/div
500 ns/div
500 ns/div
Figure 25. 3 V Inverting Small Signal Pulse
Response
Figure 26. 3 V Non−Inverting Small Signal
Pulse Response
VS = +6 V
Av = +1
RL = 2 kW
500 mV/div
500 mV/div
VS = ±3 V
Av = −1
RL = 2 kW
500 ns/div
500 ns/div
Figure 27. 6 V Inverting Large Signal Pulse
Response
Figure 28. 6 V Non−Inverting Large Signal
Pulse Response
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TLV271
VS = +6 V
Av = +1
RL = 2 kW
25 mV/div
25 mV/div
VS = +6 V
Av = −1
RL = 2 kW
500 ns/div
500 ns/div
Figure 29. 6 V Inverting Small Signal Pulse
Response
Figure 30. 6 V Non−Inverting Small Signal
Pulse Response
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TLV271
APPLICATIONS
50 k
R1
5.0 k
VDD
VDD
R2
10 k
MC1403
2.5 V
VO
TLV271
VO
TLV271
VDD
−
Vref
−
+
+
1
V ref + V DD
2
R1
V O + 2.5 V(1 )
)
R2
R
R
Figure 31. Voltage Reference
fO +
C
C
1
2pRC
For: fo = 1.0 kHz
R = 16 kW
C = 0.01 mF
Figure 32. Wien Bridge Oscillator
VDD
C
R1
Vin
R2
C
R3
−
Hysteresis
Vin
R1
+
R2
VOH
Vref
TLV271
−
VO
VOL
VO
CO = 10 C
Vref
VO
+
CO
TLV271
VinL
Given: fo = center frequency
A(fo) = gain at center frequency
VinH
Choose value fo, C
Q
Then : R3 +
pf O C
Vref
R1
(V OL * V ref) ) V ref
R1 ) R2
R1
V inH +
(V OH * V ref) ) V ref
R1 ) R2
R1
H+
(V OH * V OL)
R1 ) R2
V inL +
R1 +
R2 +
R3
2 A(f O)
R1 R3
4Q 2 R1 * R3
Figure 33. Comparator with Hysteresis
For less than 10% error from operational amplifier,
((QO fO)/BW) < 0.1 where fo and BW are expressed in Hz.
If source impedance varies, filter may be preceded with
voltage follower buffer to stabilize filter parameters.
Figure 34. Multiple Feedback Bandpass Filter
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11
TLV271
PACKAGE DIMENSIONS
TSOP−5
CASE 483−02
ISSUE K
D
NOTE 5
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE
MINIMUM THICKNESS OF BASE MATERIAL.
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR GATE BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT
EXCEED 0.15 PER SIDE. DIMENSION A.
5. OPTIONAL CONSTRUCTION: AN ADDITIONAL
TRIMMED LEAD IS ALLOWED IN THIS LOCATION.
TRIMMED LEAD NOT TO EXTEND MORE THAN 0.2
FROM BODY.
5X
0.20 C A B
0.10 T
M
2X
0.20 T
B
5
1
4
2
B
S
3
K
DETAIL Z
G
A
A
TOP VIEW
DIM
A
B
C
D
G
H
J
K
M
S
DETAIL Z
J
C
0.05
H
SIDE VIEW
C
SEATING
PLANE
END VIEW
MILLIMETERS
MIN
MAX
3.00 BSC
1.50 BSC
0.90
1.10
0.25
0.50
0.95 BSC
0.01
0.10
0.10
0.26
0.20
0.60
0_
10 _
2.50
3.00
SOLDERING FOOTPRINT*
0.95
0.037
1.9
0.074
2.4
0.094
1.0
0.039
0.7
0.028
SCALE 10:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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TLV271/D