NEIL GOLDSMAN
Department of Electrical and Computer Engineering
University of Maryland
College Park, MD 20742
(301) 405-3648
e-mail: neil@eng.umd.edu
I. PERSONAL INFORMATION
PROFESSIONAL EXPERIENCE
Professor of Electrical and Computer Engineering
- University of Maryland, College Park, MD 20742
- Appointed: 1988 as assistant professor
- Promoted to associate professor: 1993
- Promoted to full professor: 1999
Graduate Research Assistant
- Cornell University, Ithaca, NY 14850, 1984-1988
Graduate Teaching Assistant
- Cornell University, Ithaca, NY 14850, 1983-1984
EDUCATION
Ph.D. Electrical Engineering
- Cornell University, 1989,
Major subject: Semiconductor Device Physics,
Minor subjects: Applied Physics; Computational Methods in
Electrical Engineering
- Dissertation Title: “Modeling Electron Transport and Degradation
Mechanisms in Semiconductor Submicron Devices”
Master of Electrical Engineering
- Cornell University, School of Electrical Engineering, 1984
B.A. Physics
- Cornell University, College of Arts and Sciences, 1981
II. RESEARCH AND SCHOLARLY ACTIVITIES
AWARDS
Merit Scholarship
- Awarded by the Post Foundation for academic achievement
to help pursue graduate education (1983).
George Corcoran Award
- Given annually to a faculty member for outstanding contributions
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to electrical engineering education (1990).
National Science Foundation Research Initiation Award
- Project Title: “Efficient and Comprehensive Semiconductor
Device Modeling”(1990-1993)
General Research Board Summer Research Award
- Project Title: “A Physics-Based Model for Optimizing Solar Cell Design” (1991)
Best Professor of the Year Award
- Presented by the IEEE Student Branch for outstanding
contributions to teaching (1992)
Benjamin Dasher Award
- best paper out of 400 in the Frontiers in Education Conference (2003).
JOURNAL PUBLICATIONS
[1] J. Frey and N. Goldsman, “Tradeoffs and Electron Temperature Calculations
in Lightly Doped Drain Structures,” IEEE Electron Device Letters, EDL-6, pp.
28-30, 1985.
[2] N. Goldsman and J. Frey, “Electron Distribution Function for Calculation of
Gate Leakage Current in MOSFETS,” Solid-State Electronics, Vol. 31, pp.
1089-1092, 1988.
[3] N. Goldsman and J. Frey, “Efficient Use of the Energy Transport Method in
Device Simulation,” IEEE Trans. Elec. Dev., Vol. 35, pp. 1524-1529, 1988.
[4] N. Goldsman, Y-J. Wu and J. Frey, “Efficient Calculation of Ionization Coefficients in Silicon from the Energy Distribution Function,” Journal of Applied
Physics, 68, pp. 1075-1081, 1990.
[5] T. Urai, J. Frey, Z. Z. Peng and N. Goldsman, “Simulation of EPROM Programming Characteristics,” Electronics Letters 26, pp. 716-717, 1990.
[6] L. Henrickson, Z. Z. Peng, J. Frey and N. Goldsman, “Enhanced Reliability in
Si MOSFETs with Channel Lengths Under 0.2 Micron,” Solid-State Electronics, Vol. 33, pp. 1275-1278, 1990.
[7] M. Takeda, J. Frey, Z. Peng and N. Goldsman, “Simulation of Substrate Current Characteristics in Submicron MOSFETs,” Electronics Letters, Vol. 27,
pp. 144-146, 1991.
[8] N. Goldsman, L. Henrickson and J. Frey, “Reconciliation of a Hot-Electron Distribution Function with the Lucky Electron Model in Silicon,” IEEE Electron
Device Letters, vol. 11, pp. 472-474, 1991.
[9] N. Goldsman, L. Henrickson and J. Frey, “A Physics-Based Analytical/Numerical Solution to the Boltzmann Transport Equation for Use in Device Simulation,” Solid-State Electronics, Vol. 34, 389-396, 1991.
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[10] H. Lin and N. Goldsman, “An Efficient Solution of the Boltzmann Transport
Equation which Includes the Pauli Exclusion Principle,” Solid-State Electronics, Vol. 34, pp. 1035-1048, 1991.
[11] H. Lin, N. Goldsman and I.D. Mayergoyz, “An Efficient Deterministic Solution
of the Space-Dependent Boltzmann Transport Equation for Silicon,” SolidState Electronics, Vol. 35, pp. 33-42, 1992.
[12] S-L. Wang, N. Goldsman and K. Hennacy, “Calculation of Impact Ionization
Coefficients with a Third Order Legendre Polynomial Expansion of the Distribution Function,” Journal of Applied Physics, 71, pp. 1815-1822, 1992.
[13] H. Lin, N. Goldsman and I.D. Mayergoyz, “Device Modeling by Deterministic Self-Consistent Solution of Poisson and Boltzmann Transport Equations,”
Solid-State Electronics, Vol. 35, pp. 769-778, 1992.
[14] S-L. Wang, N. Goldsman and K. Hennacy, “Determination of Space-Dependent
Distribution Function by Combined Use of Energy and Boltzmann Transport
Equations: Improvement, Evaluation, and Explanation,” IEEE Trans. Electron Devices, Vol. 39, pp. 1821-1828, 1992.
[15] Q. Lin, N. Goldsman and G. W. Tai, A Globally Convergent Method for Solving the Energy Balance Equation in Device Simulation,” Solid State Electronics,vol. 36, pp. 411–419, 1993.
[16] K. A. Hennacy and N. Goldsman, “A Generalized Legendre Polynomial/Sparse
Matrix Approach for Determining the Distribution Function in Semiconductors.” Solid-State Electronics, vol. 36, pp. 869–877, 1993.
[17] S. L. Wang, N. Goldsman, Q. Lin and J. Frey, “RELY: A Physics-Based
CAD Tool for Predicting Time-Dependent Hot-Electron-Induced Degradation
in MOSFETs.” Solid-State Electronics, vol. 36, pp. 833–841, 1993.
[18] Y.J. Wu and N. Goldsman, “An Efficient Solution of the Multi-band Boltzmann
Transport Equation in Silicon,” International Journal for Computation and
Mathematics in Electrical and Electronic Engineering (COMPEL), Vol. 12,
No. 4, pp. 475-485, 1993.
[19] Q. Lin, N. Goldsman, and G.-C. Tai, “Highly Stable and Routinely Convergent
2-Dimensional Hydrodynamic Device Simulation,” Solid State Electronics, Vol.
37, No. 2, pp. 359-371, 1994.
[20] A. Abramo, et.al., “A Comparison of Numerical Solutions of the Boltzmann
Transport Equation for High-Energy Electron Transport in Silicon,” IEEE
Trans. Electron Devices, vol. 41, no. 9, pp. 1646–1654, 1994.
[21] Y.-J. Wu and N. Goldsman, “Deterministic Modeling of Impact Ionization with
a Random-k Approximation and the Solution of the Multi-Band Boltzmann
Transport Equation,” Journal of Applied Physics, vol. 78, no. 8, 1995.
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[22] K. A. Hennacy, Y.-J. Wu, N. Goldsman, and I. D. Mayergoyz, “Deterministic
MOSFET Simulation Using a Generalized Spherical Harmonic Expansion of the
Boltzmann Equation,” Solid-State Electronics, vol. 38, pp. 1498–1495, 1995.
[23] J. Stanley and N. Goldsman, “Full-Zone Dispersion Relations in Si Using Schur
Complement Decomposition,” Physical Review B, vol. 51, no. 8, pp. 4931–4939,
1995.
[24] S. Singh, N. Goldsman, and I. Mayergoyz, “Modeling Multi-Band Effects in
Silicon by Self-Consistent Solution of the Boltzmann Transport and Poisson
Equations,” Solid-State Electronics, vol. 39, pp. 1695-1700, 1996.
[25] W. Liang, D. Kerr, N. Goldsman, and I. Mayergoyz, “Hydrodynamic Device
Simulation Using New State variables Tailored for a Block Gummel Iterative
Approach,” Solid State Electronics, Vol. 39, No. 8, pp1213-1220, 1996.
[26] W. Liang, N. Goldsman, I. Mayergoyz and P. Oldiges, “2-Dimensional MOSFET Modeling Including Surface Effects and Impact Ionization by Self-Consistent
Solution of the Boltzmann, Poisson and Hole-Continuity Equations,” IEEE
Transactions on Elec. Dev. vol. 44, no. 2, pp. 257-267, 1997.
[27] W. Wang, C. Chang, I. Berry, D. Ma, M. Peckerar, N. Goldsman and J. Melngailis, “Self-Aligned Subchannel Implant Complementary Metal-Oxide Semiconductor Devices Fabrication,” Journal of Vacuum Science Tech. B, 15(16),
Nov/Dec, pp.2816-2820, 1997.
[28] C-C Shen, J. Murguia, N. Goldsman, M. Peckerar, J. Melngailis and D. Antoniadis, “Use of Focused-Ion-Beam and Modeling to Optimize Submicron MOSFET Characteristics,” IEEE Transactions on Elec. Dev., vol. 45, pp. 453-459,
1998.
[29] M.S. Krishnan, N. Goldsman and A. Christou, ”Transport Simulation of Bulk
Alx Ga1−x N and the Two-Dimensional Electron Gas at the Alx Ga1−x N/GaN
Interface,” Journal of Applied Physics, Volume 83, Issue 11, pp. 5896-5903,
1998.
[30] W. Liang, D. Kerr, N. Goldsman, and I. Mayergoyz, “Hydrodynamic Device
Modeling with New State Variables Specially Chosen for a Block Gummel
Iterative Approach,” VLSI Design, Vol. 6, pp. 191-195, 1998.
[31] D. Kerr, W. Liang, N. Goldsman, and I. Mayergoyz, “Thee-Dimensional Hydrodynamic Modeling of MOSFET Devices,” VLSI Design, Vol. 6, pp. 257-260,
1998.
[32] W. Liang, N. Goldsman, and I. Mayergoyz, “A New Self-Consistent 2D Device
Simulator Based on Deterministic Solution of the Boltzmann, Poisson and HoleContinuity Equations,” VLSI Design, Vol. 6, pp. 251-256, 1998.
[33] S. Singh, N. Goldsman, and I. Mayergoyz, “A Self-Consistent Solution of the
Multi-Band Boltzmann, Poisson and Hole-Continuity Equations,” VLSI Design, Vol. 6, pp. 257-260, 1998.
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[34] M. Huang, N. Goldsman, C-H Chang, I. Mayergoyz, J. McGarrity, and D.
Woolard, “Determining 4H-SiC Electronic Properties through Combined Use of
Device Simulation and MESFET Terminal Characteristics,” Journal of Applied
Physics, Vol. 84, pp. 2065-2070, 1998.
[35] J. Stanley and N. Goldsman, “New Irreducible Wedge for Scattering Rate Calculations in Full-Zone Monte Carlo Simulations,” VLSI DESIGN. Accepted for
publication, 1997.
[36] C.H. Chang, C-K Lin, N. Goldsman and I.D. Mayergoyz, “Spherical Harmonic
Modeling of a 0.05µm Base BJT: A Comparison with Monte Carlo and Asymptotic Analysis,” VLSI DESIGN. Accepted for publication, 1997.
[37] Z. Han, N. Goldsman and M. Stettler, “The Realization of Scattering Matrix
Approach to Transport Modeling through Spherical Harmonics,” Solid-State
Electronics, pp. 493-501, 1999.
[38] C.-K. Lin, N. Goldsman, I. D. Mayergoyz, and C.-H. Chang, “A Transient Solution of the Boltzmann Equation Exposes Energy Overshoot in Semiconductor
Devices,” Journal of Applied Physics, vol. 86, no. 1, pp. 468–475, 1999.
[39] N. Goldsman, C.-K. Lin, Z. Han, and C.-K. Huang, “Advances in the Spherical
Harmonic Boltzmann/Wigner Approach to Device Simulation,” Superlattices
and Microstructures, vol. 27, no. 2-3, pp. 159–175, 2000.
[40] N. Dhar, N. Goldsman, and C. E. C. Wood, “Telurium desorption kinetics from
(112) silicon: Si-Te bond energy,” Phys. Rev. B, vol. 61 (12), pp. 8256–8261,
2000.
[41] N. Goldsman, C.-K. Lin, Z. Han, and C.-K. Huang, “Advances in the spherical harmonic Boltzmann/Wigner approach to device simulation,” Superlattices
and Microstructures, vol. 27, no. 2-3, pp. 159–175, 2000.
[42] M. Huang, I. Mayergoyz, and N. Goldsman, “Numerical simulation of smallsignal microwave performance of 4H-SiC MESFET,” Solid State Electronics,
vol. 44, pp. 1281–1287, 2000.
[43] A. Safwat, C. Lin, J. Kim, F. Johnson, W. J. WB, N. Goldsman, and C. Lee,
“Investigation of the optical spot position on the performance of metal semiconductor metal structures: novel application,” Solid State Electronics, vol. 44,
pp. 2077–2080, 2000.
[44] N. Dhar, P. Boyd, M. Martinka, J. Dinan, L. Almeida, and N. Goldsman,
“CdZnTe heteroepitaxy on 3-inch (112) Si: Interface, surface, and layer characteristics,” Journal of Electronic Materials, vol. 29 (6), pp. 748–753, 2000.
[45] G. Pennington and N. Goldsman, ”Empirical Pseudopotential Band Structure
of 3C, 4H, and 6H SiC Using Transferable Semiempirical Si and C Model
Potentials,” Physical Review B, 64, pp. 045104-1 to 045104-10, 2001.
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[46] S. K. Powell, N. Goldsman, J. M. McGarrity, J. Bernstein, C.J. Scozzie and A.
Lelis “Characterization and Physics-Based Modeling of 6H-SiC MOSFETs,”
Journal of Applied Physics, vol. 92, no. 7, pp. 4053-4061, 2002.
[47] A. Akturk, N. Goldsman and G. Metze, “Faster CMOS Inverter Switching
Obtained with Channel Engineered Asymmetrical Halo Implanted MOSFETs,”
Solid State Electronics, vol. 47, pp. 185–192, 2003.
[48] C.K. Huang and N. Goldsman, “Non-equilibrium modeling of tunneling gate
currents in nanoscale MOSFETs,” Solid State Electron 47 (4): pp. 713-720,
2003.
[49] G. Pennington and N. Goldsman, “Monte Carlo study of electron transport in
a carbon nanotube,” IEICE Trans. on Electron, E86C (3): pp. 372-378, MAR
2003.
[50] G. Pennington and N. Goldsman, “Semiclassical transport and phonon scattering of electrons in semiconducting carbon nanotubes,” Phys. Rev. B, 68
(4): Art. No. 045426-1 – 11 , 2003.
[51] N. Goldsman and C.K. Huang, ”Self-Consistent Modeling of MOSFET Quantum Effects by Solving the Schrodinger and Boltzmann System of Equations,”
International Journal of High Speed Electronics and Systems, Vol. 13, No. 3,
pp. 803-822, 2003.
[52] G. Pennington and N. Goldsman, “Self-consistent calculations for n-type hexagonal SiC inversion layers Journal Applied Physics 95 (8), pp. 4223-4234, 2004.
CHAPTERS IN BOOKS
[1] W. Liang, Y.-J. Wu, K. Hennacy, S. Singh, N. Goldsman, and I. Mayergoyz, “2D MOSFET Simulation by Self-consistent Solution of the Boltzmann and Poisson Equations Using a Generalized Spherical Harmonic Expansion,” in Simulation of Semiconductor Devices and Processes, (Wien, New York), pp. 122–125,
Springer-Verlag, 1995.
[2] W.-C. Liang, Y.-J. Wu, K. Hennacy, S. Singh, N. Goldsman, and I. Mayergoyz, “2-Dimensional MOSFET Analysis Including Impact Ionization by SelfConsistent Solution of the Boltzmann Transport and Poisson Equations Using a
Generalized Spherical Harmonic Expansion Method,” in Hot Carriers in Semiconductors, pp. 483–487, 1996.
[3] C.-K. Lin, N. Goldsman, C.-H. Chang, I. Mayergoyz, S. Aronowitz, Jeffrey
Dong and Nadya Belova, “Extension of Spherical Harmonic Method to RF
Transient Regime,” in Simulation of Semiconductor Devices and Processes,
(Wien, New York), pp. 42–45, Springer-Verlag, 1998.
[4] Z. Han, N. Goldsman and M. Stettler, “Combining the Scattering Matrix
and Spherical Harmonic Methods for Semiconductor Modeling,” in Simulation of Semiconductor Devices and Processes, (Wien, New York), pp. 177–180,
Springer-Verlag, 1998.
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[5] G. Pennington and N. Goldsman, ”Modeling Semiconductor Carbon Nanotube
Rectifying Heterojunctions,” Simulation of Semiconductor Processes and Devices 2001, pp. 218-221, Spring Verlag, 2001.
[6] C.-K. Huang and N. Goldsman, ”2-D Self-Consistent Solution of Schrodinger
Equation, Boltzmann Transport Equation, Poisson and Current-continuity Equation for MOSFET,” Simulation of Semiconductor Processes and Devices 2001,
pp. 148-151, Spring Verlag, 2001.
[7] N. Goldsman and C.-K. Huang, “Self-Consistent Modeling of MOSFET Quantum Effects by Solving the Schrdinger and Boltzmann System of Equations,”
Advanced Device Modeling and Simulation, World Scientific, 2003.
REFEREED CONFERENCE PUBLICATIONS
[1] N. Goldsman and J. Frey, “Prediction of Hot-Electron Induced Gate Currents,”
Device Research Conference, 1986. Abstract in IEEE Transactions on Electron
Devices, November, 1986.
[2] S. L. Wang, N. Goldsman and J. Frey, “RELY: A Physics-Based Simulator for
Time-Dependent Hot-Electron Induced MOSFET Reliability Investigations,”
Proceedings of the International Electron-Devices and Materials Symposium,
pp. 277-280, 1990.
[3] S-L. Wang, N. Goldsman, L. Henrickson and J. Frey, “MOSFET Hot-Electron
Gate Current Calculation by Combining Energy Transport Method with Monte
Carlo Simulation,” Proceedings of the International Electron Devices Meeting,
pp. 100-103, 1990.
[4] T. Urai, Z.Z. Peng, J. Frey and N. Goldsman, “Simulation of EPROM Programming Characteristics,” Proceedings of the Workshop on Numerical Modeling
of Processes and Devices for Integrated Circuits, 1990.
[5] H. Lin, N. Goldsman and I.D. Mayergoyz, “A Direct Solution of the SpaceDependent Boltzmann Transport Equation in Silicon,” Proceeding of the 4th
International Conference on Simulation of Semiconductor Devices and Processes. pp. 195-204, 1991.
[6] H. Lin, N. Goldsman and I.D. Mayergoyz, “Device Modeling by Deterministic Self-Consistent Solution of Poisson and Boltzmann Transport Equations,”
Proceedings of the International Semiconductor Device Research Symposium,
pp. 435-438, 1991.
[7] S-L. Wang, N. Goldsman and K. Hennacy, “An Efficient Technique for Determination of Space-Dependent Distribution Function: Improvement, Evaluation
and Explanation,” Proceedings of the International Semiconductor Device Research Symposium, pp. 119-122, 1991, (invited).
[8] K. Hennacy, and N. Goldsman, “Infinite Series Expansion Method of Solving
Boltzmann’s Equation,” Proceedings of the Eighth International Conference
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on the Numerical Analysis of Semiconductor Devices and Integrated Circuits,
pp. 25-26, 1992, (invited).
[9] H. Lin, N. Goldsman and I.D. Mayergoyz, “An Efficient, Self-Consistent Method
for Calculating the Distribution Function for an Entire Device,” Proceedings
of the Eighth International Conference on the Numerical Analysis of Semiconductor Devices and Integrated Circuits, pp. 27-28, 1992, (invited).
[10] Q. Lin and N. Goldsman, “A Globally Convergent Algorithm for Solving Energy Balance Equations,” Proceedings of the Eighth International Conference
on the Numerical Analysis of Semiconductor Devices and Integrated Circuits,
pp. 56-57, 1992, (invited).
[11] Q. Lin and N. Goldsman, “A Globally Convergent Algorithm for Solving Energy Balance Equations,” Proceeding of the International Workshop on Computational Electronics, pp. 67-70, 1992.
[12] S. L. Wang and N. Goldsman, “Efficient Modeling of Time-Dependent HotElectron-Induced MOSFET Degradation with a Hydrodynamic/Boltzmann
Transport Equation Hybrid Method,” Proceedings of the International Workshop on Computational Electronics, pp. 115-1118, 1992.
[13] K. Hennacy and N. Goldsman, “Analysis of Carrier Transport in Semiconductors with Infinite Series Expansion of the Momentum Distribution Function,”
Proceedings of the International Workshop on Computational Electronics, pp.
139-142, 1992.
[14] H. Lin, N. Goldsman and I. D. Mayergoyz, “Self-Consistent Device Modeling
by Direct Solution to Boltzmann and Poisson Equations,” Proceedings of the
International Workshop on Computational Electronics, pp. 143-146, 1992.
[15] H. Lin, N. Goldsman, and I. D. Mayergoyz, “Deterministic Device Modeling
of BJT’s by Improved Self-Consistent Solution to the Boltzmann and Poisson
Equations,” Proceeding of the Ninth International Conference on the Numerical
Analysis of Semiconductor Devices and Integrated Circuits, pp. 7–8, 1993.
[16] Y. Wu and N. Goldsman, “An Efficient Solution of the Multi-Band Boltzmann
Transport Equation in Silicon,” Proceeding of the Ninth International Conference on the Numerical Analysis of Semiconductor Devices and Integrated
Circuits, pp. 64–65, 1993.
[17] K. A. Hennacy, N. Goldsman, and I. D. Mayergoyz, “2-Dimensional Solution
to the Boltzmann Transport Equation to Arbitrarily High-order Accuracy,”
Proceeding of the International Workshop on Computational Electronics, pp.
118-122, 1993.
[18] H. Lin, N. Goldsman, and I. D. Mayergoyz, “Deterministic BJT Modeling by
Self-Consitent Solution to the Boltzmann, Poisson and Hole Continuity Equations,” Proceeding of the International Workshop on Computational Electronics, pp. 55-59, 1993.
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[19] Q. Lin and N. Goldsman, “A Robust 2D Submicron SOI MOSFET Simulator
Based on the Hydrodynamic Model,” SRC TECHCON’93, 1993.
[20] Q. Lin, N. Goldsman, and G.-C. Tai, “A New, Easy-to-Code, Robust and Stable
Approach to 2-D Hydrodynamic Submicron Device Modeling,” Proceeding of
the International Workshop on Computational Electronics, pp. 80-84, 1993.
[21] K. Hennacy, N. Goldsman, and I. D. Mayergoyz, Determination of Diffusion
Coefficients and Mobilities Using the Effective Field Concept,” Proceeding of
the International Workshop on Computational Electronics, pp. 133-138, 1993.
[22] Y. J. Wu and N. Goldsman, “Efficient Calculation of Impact Ionization Coefficients from the Distribution Function of the Multi-Band Boltzmann Transport
Equation in Silicon,” Proceeding of the 1993 International Semiconductor Device Research Symposium, pp. 495-498, (1993) (invited).
[23] J. Stanley and N. Goldsman, “An Efficient Full-Zone KP Method with Application to Hole Transport Studies,”Proceeding of the 1993 International Semiconductor Device Research Symposium, pp. 669-672, (1993).
[24] J. P. Stanley and N. Goldsman, “An efficient full-zone K.P method for on the
fly calculation of valence band energies in hole transport studies,” Proceeding of
the Third International Workshop on Computational Electronics, pp. 274-277,
1994.
[25] Y.-J. Wu and N. Goldsman, “Using the Random-k Approximation to Consistently Incorporate Impact Ionization into the Generalized Expansion Method
for Solving the Multiband BTE in Silicon,” Proceeding of the Third International Workshop on Computational Electronics, pp. 61-64, 1994.
[26] R. Madabhushi, Q. Lin, G.-C. Tai, N. Goldsman, and I. Mayergoyz, “ThreeDimensional Hydrodynamic Simulation of Submicron MOSFET’s,” Proceeding
of the Third International Workshop on Computational Electronics, pp. 70-73,
1994.
[27] Y.-J. Wu, K. Hennacy, N. Goldsman, and I. Mayergoyz, “Two Dimensional
Submicron MOSFET Simulation Using Generalized Expansion Method and
Fixed Point Iteration Technique to the Boltzmann Transport Equation,” International Symposium on VLSI Technology, Systems, and Applications, pp. 122–
125, 1995.
[28] C. Chang, D. Kerr, W. Liang, N. Goldsman, and I. Mayergoyz, “Advances and
applications in 3-dimensional and transient hydrodynamic device modeling,”
in SRC TECHCON’96. Available online through
http://www.src.org/resrch/pubs/pubs96/toc/un 037.cgi.
[29] W. Liang, N. Goldsman, I. Mayergoyz, and P. Oldiges, “BTEMOS: A New
Robust and Efficient 2-Dimensional MOSFET Simulator Based on the SelfConsistent Boltzmann, Poisson, Hole-Continuity Model,” SRC TECHCON’96,
1996. Available online through
http://www.src.org/resrch/pubs/pubs96/toc/un 037.cgi.
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[30] J. Stanley and N. Goldsman, “A New k-Space Irreducible Wedge for Interpolation and Scattering Rate Computations in Full-Zone Monte Carlo Codes for
Si,” SRC TECHCON’96, 1996. Available online through
http://www.src.org/resrch/pubs/pubs96/toc/un 037.cgi.
[31] C.-H. Chang, C.-K. Lin, W. Liang, N. Goldsman, I. D. Mayergoyz, P. Oldiges,
and J. Melngailis, “The Spherical Harmonic Method: Corroboration with Monte
Carlo and Experiment,” Proceedings of International Conference on Simulation
of Semiconductor Processes and Devices, pp. 225-228, 1997.
[32] W. Wang, C. Chang, M. Peckerar, I. Berry, N. Goldsman and J. Melngailis,
“Self-Aligned Sub-Channel Implant CMOS Devices Fabrication,” Proceedings
of the 41’st International Conference on Electron, Ion and Photon Beam Technology, pp.120-121, 1997.
[33] M.S. Krishnan, N. Goldsman and A. Christou, ”Numerical Simulation of AlGaN/GaN Heterojunction Field Effect Transistors,” Abstracts of Materials Research Society Fall 1997 Symposium, p. 380, 1997.
[34] C.-K. Lin, N. Goldsman, Z. Han, I. Mayergoyz, S. Yu, M. Stettler, and S. Singh,
“Frequency domain analysis of the distribution function by small signal solution of the Boltzmann and Poisson equations,” in International Conference on
Simulation of Semiconductor Processes and Devices, pp. 39–42, 1999.
[35] C.-K. Lin, N. Goldsman, I. Mayergoyz, S. Aronowitz, and N. Belova, “Advances
in spherical harmonic device modeling: Calibration and nanoscale electron dynamics,” in International Conference on Simulation of Semiconductor Processes
and Devices, pp. 247–250, 1999.
[36] Z. Han, C.-K. Lin, N. Goldsman, I. Mayergoyz, S. Yu and M. Stettler, “Gate
leakage current simulation by Boltzmann transport equation and its dependence on the gate oxide thickness,” in International Conference on Simulation
of Semiconductor Processes and Devices, pp. 167–170, 1999.
[37] S. K. Powell, N. Goldsman, J. M. McGarrity, and F. Crowne, “Investigating and
comparing the effects of lattice heating in 4H-SiC and Si device,” in Proceedings
of the International Semiconductor Device Research Symposium, 1999.
[38] Z. Han and N. Goldsman, “The spherical harmonics wigner equation for quantum transport in semiconductor devices,” in Proceedings of the International
Semiconductor Device Research Symposium, pp. 203–206, 1999.
[39] G. Pennington, N. Goldsman, J. McGarrity, and F. Crowne, “Non-local empirical pseudopotential calculation of 4H-SiC bandstructure for use in electron
transport investigations,” in Proceedings of the International Semiconductor
Device Research Symposium, 1999.
[40] C.-K. Huang and N. Goldsman, “Source side p+ implant significantly improves
nmosfet performance,” in Proceedings of the International Semiconductor Device Research Symposium, pp. 401–404, 1999.
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[41] C.-K. Huang and N. Goldsman, “Including the pauli exclusion principle in
semiconductor device simulation,” in Proceedings of the International Semiconductor Device Research Symposium, pp. 211–214, 1999.
[42] M. Huang, N. Goldsman, I. Mayergoyz, J. McGarrity, and F. Crowne, “Temperature dependent DC and microwave performance of 4H-SiC MESFET,” in
Proceedings of the International Semiconductor Device Research Symposium,
pp. 253–256, 1999.
[43] M. Huang, N. Goldsman, I. Mayergoyz, J. McGarrity, and F. Crowne, “Role
of the Schottky gate structure in the temperature dependence of breakdown
characteristic of 4H-SiC MESFET,” in Proceedings of the International Semiconductor Device Research Symposium, pp. 257–260, 1999.
[44] Z. Han, N. Goldsman, and C.-K. Lin, “2-D quantum transport device modeling
by self-consistent solution of the Wigner and Poisson equations,” in International Conference on Simulation of Semiconductor Processes and Devices, 2000.
[45] G. Pennington, N. Goldsman, J. McGarrity, and F. Crowne, “A physics-based
empirical pseudopotential model for calculating band structure of simple and
complex semiconductors,” in International Conference on Simulation of Semiconductor Processes and Devices, 2000.
[46] Akin Akturk, Neil Goldsman and George Metze, ”Faster CMOS Inverter Switching Obtained y Asymmetrical Halo Implants,” International Semiconductor
Device Research Symposium Proceedings, pp. 118-121, 2001.
[47] Yun Bai and Neil Goldsman, ”Modeling of Nonuniform Heterostructures,” International Semiconductor Device Research Symposium Proceedings, pp. 244247. 2001.
[48] Gary Pennington and Neil Goldsman, ”Modeling the Effective Mass and YJunction Rectifying Current of Carbon Nanotubes,” International Semiconductor Device Research Symposium Proceedings, pp. 310 - 313. 2001.
[49] Gary Pennington, Neil Goldsman, Skip Scozzie, James McGarrity and Barry
McLean, “Investigation of Temperature Effects on Electron Transport in SiC
using Unique Full Band Monte Carlo Simulation,” International Semiconductor
Device Research Symposium Proceedings, pp. 531-534, 2001.
[50] Stephen Powell, Neil Goldsman, Charles Scozzie, Aivars Lelis and James McGarrity, “Self-Consistent Surface Mobility and Interface Charge Modeling in
Conjunction with Experiment of 6H-SiC MOSFETs,”, International Semiconductor Device Research Symposium Proceedings, pp. 572-574, 2001.
[51] S. Mitra, N. Goldsman, Z. Han, M. Mirabedini, S. Aronowitz and N. Belova,
“Gate Leakage Current Simulation for Nanoscale NMOSFETs with Nitrided
Gate Dielectric by Boltzmann Transport Equation,” International Semiconductor Device Research Symposium Proceedings, pp. 539, 2001.
11
[52] Chung-Kuang Huang and Neil Goldsman, “Modeling the Limits of Gate Oxide
Scaling with a Schrodinger-Based Method of Direct Tunneling Gate Currents
of Nanoscale MOSFETs,” Proceedings of the 2001 IEEE Conference on Nanotechnology, pp. 335-340, 2001.
[53] G. Pennington and N. Goldsman, ”Monte Carlo Simulation of Electron Transport in Carbon Nanotubes,” Proceeding Internation Conference on Simulation
of Semiconductor Processes and Devices pp. 279-282, 2002.
[54] G. Pennington, S. K. Powell, N. Goldsman, J. M. McGarrity, A. Lelis, and
C. Scozzie, “Degradation of inversion layer mobility in 6h-SiC by interface
charges,” in Semiconductor Interface Specialist Conference Abstracts, 2002.
[55] S. K. Powell, N. Goldsman, J. M. McGarrity, C. Scozzie, A. Lelis, and F. McLean,
“Interface effects on channel mobility on SiC MOSFETs,” in Semiconductor Interface Specialist Conference Abstracts, 2002.
[56] Z. Dilli, N. Goldsman, J.A. Schmidt, L. Harper and S.I. Marcus, ”A New Pedagogy in Electrical and Computer Engineering: An Experiential Approach,”
Proceedings of the ASEE/IEEE Frontiers in Education Conference, pp. T2C:37, 2002.
[57] A. Akturk, N. Goldsman and G. Metze, “Coupled Modeling of Time-Dependent
Full-Chip Heating and Quantum Non-Isothermal Device Operation,” International Conference on Simulation of Semiconductor Processes and Devices, pp.
311-314, 2003.
[58] X. Shao, N. Goldsman, O. M. Ramahi, P. N. Guzdar, “A New Method for Simulation of On-Chip Interconnects and Substrate Currents with 3D Alternating
Direction-Implicit (ADI) Maxwell Equation Solver,” International Conference
on Simulation of Semiconductor Processes and Devices, pp. 315-318, 2003.
[59] A. Akturk, G. Pennington and N. Goldsman, Modeling the Enhancement of
Nanoscale MOSFETs by Embedding Carbon Nanotubes in the Channel, IEEE
NANO 2003 Conference Proceedings, pp. 24-27, 2003.
[60] X. Shao, N. Goldsman, and O. M Ramahi, “The Alternating-Direction Implicit
Finite-Difference Time-Domain (ADI-FDTD) Method and its Application to
Simulation of Scattering from Highly Conductive Material,” IEEE International Antennas and Propagation Symposium and USNC/CNC/URSI North
American Radio Science Meeting: URSI, Digest, p. 358, 2003.
[61] A. Akturk, G. Pennington and N. Goldsman, Modeling the Enhancement of
Nanoscale MOSFETs by Embedding Carbon Nanotubes in the Channel, IEEE
NANO 2003 Conference Proceedings, pp. 24-27, 2003.
[62] G. Pennington and N. Goldsman, Theory and Design of Field-Effect Carbon
Nanotube Transistors, International Conference on Simulation of Semiconductor Processes and Devices, pp. 167-170, 2003.
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[63] A. Akturk, L. Parker, N. Goldsman and G. Metze , “Mixed-Mode Simulation
of Non-Isothermal Quantum Device Operation and Full-Chip Heating,” International Semiconductor Device Research Symposium, pp. 508-509, 2003.
[64] Y. Bai, Z. Dilli, N. Goldsman and G. Metze, “Frequency-Dependent Modeling
of On-Chip Inductors on Lossy Substrate,” International Semiconductor Device
Research Symposium, pp. 292-293, 2003.
[65] X. Shao, N. Goldsman, O. M. Ramahi,and P. N. Guzdar, “Modeling RF Effects
in Integrated Circuits with a New 3D Alternating-Direction-Implicit Maxwell
Equation Solver,” International Semiconductor Device Research Symposium,
pp. 532-533, 2003.
[66] G. Pennington, A. Akturk and N. Goldsman, “Electron Mobility of a Semiconducting Carbon Nanotube,” International Semiconductor Device Research
Symposium, pp. 412-413, 2003.
INVITED PRESENTATIONS
[1] N. Goldsman, “Hot Electron Calculations in MOSFETs with Gate Current as
a Case Study,” Workshop on Numerical Device Simulation, General Electric–
Corporate Research and Development Center, Schenectady, NY, 1986.
[2] N. Goldsman and J. Frey, “Hot Electrons and the Device Degradation Simulator: DEGRADEMOS,” presented at RCA Corporation, 1987.
[3] N. Goldsman and J. Frey, “Hot-Electron Model: DEGRADEMOS,” Semiconductor Research Corporation Research Planning Conference–Reliability of
VLSI Circuits, University of Texas at Austin, 1987.
[4] N. Goldsman, “Modeling Electron Transport and Degradation Mechanisms in
Semiconductor Submicron Devices,” presented at Case Western Reserve University, Polytechnic University of New York, University of Maryland, and University of Massachusetts, 1988.
[5] N. Goldsman, “ Failure Mechanisms in Microelectronic Devices,” presented at
the Reliability Seminar, University of Maryland 1989.
[6] N. Goldsman, “Physics-Based Modeling of Semiconductor Devices: Performance, Reliability and Processing,” Washington Area IEEE Society, 1992.
[7] N. Goldsman, “Efficient Self-Consistent Semiconductor Device Modeling by
Deterministic Solution to the Boltzmann and Poisson Equations,” Microwave
Theory and Techniques Symposium, Workshop on combined self-consistent particle transport simulation, 1993.
[8] N. Goldsman, “User Friendly Numerical Strategies for Advanced Device Modeling: The Hydrodynamic and Boltzmann-Poisson Models,” in SRC Topical
Research Conference on Device Performance CAD, 1993,
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[9] N. Goldsman, “Numerical Modeling of Semiconductor Devices,” A series of
talks given at National Semiconductor, LSI Logic, TMA and Silvaco Corporations, April 1996.
[10] N. Goldsman, “TCAD: Finding the Right Balance,” National Center for Computational Electronics Meeting, Beckman Institute, University of Illinois, 1996.
[11] N. Goldsman, “Advanced and Practical Approaches to Device Simulation,”
AT&T Lucent Corp., 1997.
[12] N. Goldsman “Numerical Modeling of Semiconductor Devices: Numerical Boltzmann, Hydrodynamic and Advanced Drift Diffusion.” Semiconductor Research
Corp. Technology Transfer Short Course on Hierarchical Device Simulation via
a Web-Based Simulation Laboratory, Purdue University, 1997,
[13] N. Goldsman, “Advanced and Practical Approaches to Device Simulation with
Application to 0.1 Micron Geometries,” LSI Logic Corp., 1997.
[14] Neil Goldsman, “Advanced and Practical Approaches to Semiconductor Device
CAD with Application to 0.1 Micron Geometries,” University of Notre Dame,
Oct. 30, 1998.
[15] Neil Goldsman, “Advances in the Spherical Harmonic Boltzmann/Wigner Approach to Device Simulation,” The 3rd NASA Workshop on Device Modeling,
NASA Ames Research Center, Moffet Field CA, August 1999.
[16] Neil Goldsman, “CAD for Electronics in the 21st Century,” Research Review
Day, University of Maryland, College Park, April 1999.
[17] Neil Goldsman, “Spherical Harmonic Boltzmann Device Modeling,” Intel Corporation, Hillsboro, OR, April 1999.
[18] Neil Goldsman, “Spherical Harmonic Boltzmann Device Modeling,” Intel Corporation, Santa Clare, CA, April 2000.
[19] Neil Goldsman, “Spherical Harmonic Boltzmann Device Modeling,” Intel Corporation, Santa Clare, CA, March 2001.
[20] Neil Goldsman, “Modeling and Design for Large Scale Heterogeneous Integration,” Laboratory for Physical Sciences, February 2002.
[21] Neil Goldsman, “Nanotubes in Electronics: Theory and Applications,” University of Washington Nanotechnology Seminar Series, March 2003.
[22] Neil Goldsman, “Advanced and Practical Approaches to Semiconductor Device
CAD,” Numerical Aspects of Circuit and Device Modeling Workshop, Sante
Fe, NM, June, 2004.
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CONTRACTS AND GRANTS FROM INDUSTRY
[1] Minta Martin Fund for Aeronautical Research
- Project Title: “Prediction of Hot-Electron Induced Semiconductor
Device Reliability Problems”
- Funding: $30,000 (1989-1991); (Principle Investigator (PI)).
[2] Semiconductor Research Corporation
- Project Title: “Research on Silicon Devices for the 21’st Century”
- Funding: $412,000 (1990-1993); (Co-PI, with J. Frey).
[3] Semiconductor Research Corporation
- Project Title, “Boltzmann-Poisson, Hydrodynamic and
Advanced Drift-Diffusion Models,”
- Funding:$300,000 (1994-1997); (PI, with I. Mayergoyz).
[4] LSI Logic Corp,
- Project Title: “MOSFET Hot Electron Phenomena and Device Lifetimes”
- Funding: $30,000/yr (1996-1998); (PI).
[5] Intel Corporation,
- Project Title: “Device Modeling Using Spherical Harmonic Numerical Boltzmann”
- Funding: $135,000 (1998-2001); (PI).
[6]Maryland Semiconductor Inc
- Project Title: “Mixed Signal RF VLSI”
- Funding: $30,000 (2001); (PI) (Foundation).
CONTRACTS AND GRANTS FROM GOVERNMENT
[1] National Science Foundation
- Project Title: “Efficient and Comprehensive Semiconductor Device Modeling”
- Funding: $60,000 (1990-1993); (PI)
[2] Graduate Research Board Summer Research Award
- Project Title: “A Physics-Based Model for Optimizing Solar Cells”
- Funding: $5,400 (1991); (PI)
[3] National Science Foundation,
- Project Title: Semiconductor Device Modeling by Deterministic Self-Consistent
Solution to the Poisson and Boltzmann Transport Equations
- Funding: $300,000 (1994-1998); ((PI), with I. Mayergoyz (Co-PI)).
[4] Army Research Laboratory
- Project Title, Modeling Crystal Growth
- Funding:$30,000 (1994-1995); (PI)
[5] Microelectronics Research Lab, Maryland Procurement Office,
- Project Title: Focused Ion Beam Implanted Transistors for Integrated Circuits”
- Funding: $247,000 (1996-1998); (PI, with J. Melngailis (Co-PI)).
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[6] ARL/UMCP Microelectronic Research Collaborative Program,
- Project Title: “Nanostructures: Lateral Straggle of Implanted Ions”
- Funding: $80,000 (1996); ((Co-PI), with W. Destler (PI), J. Melngailis (Co-PI)
and E. Williams (Co-PI)).
[7] National Science Foundation,
- Project Title: “Research Experience for Undergraduates”
- Funding: $10,000 (1996-1998); (PI).
[8] ARL/UMCP Microelectronic Research Collaborative Program,
- Project Title: “Modeling of Wide Bandgap Devices and Materials”
- Funding: $227,000 (1997-2000); ((Project Manager)) with W. Destler and I. Mayergoyz).
[9] Laboratory of Physical Sciences
- Project Title: “Semiconductor Device Analysis and Design,”
- Funding: $340,000 (1997-1999); ((Co-PI) with I. Mayergoyz (PI)).
[10] Microelectronics Research Lab
- Project Title: “Devices and Circuits by Focused Ion Beam Implantation”
- Funding: $500,000 (1998-2000); ((Co-PI), with J. Melngailis, J. Orloff, R. Newcomb,
S. Guhary).
[11] Sponsor: NSA: IDEAS Program,
- Project Title: “Designing Channel-Engineered CMOS Devices and Circuits”
- Funding: $50,000 (1998-1999); (PI).
[12] Sponsor: NSA: IDEAS Program,
- Project Title: “Designing Ultrafast MOSFETs by means of Asymmetrical Doping Profiles”
- Funding: $72,000 (2000-2001); (PI).
[13] NSA,
- Project Title: “Nanofab 150 Source and System Improvements and Applications of High
Voltage FIB to Novel and Enhanced Devices”
- Funding: $662,414, (2000-2002); ((PI), with J. Orloff (Co-PI) and J. Melngailis Co-PI).
[14] ONR,
- Project Title:Robust Design of Wide Bandgap Power Devices”
- Funding: $300,000, (2000-2003); ((PI), with J. Bernstein (Co-PI)).
[15] ARL-PEER Program,
- Project Title: “Modeling, Characterization and Design of Wide Bandgap MOSFETS”
- Funding: $165,000 (2001-2003); (Project Manager).
[17] Laboratory of Physical Sciences: Joint Program for Advanced Electronic Materials
- Project Title: “Heterogeneous Integration”
- Funding: $4,500,000, (2001-2005); ( (Co-PI) with C. Lee (PI), C.H. Yang (Co-PI)
and B. Jacob (Co-PI)).
[18] AF.AFOSR.Bolling,
- Project Title: “Microwave Effects and Chaos in 21st Century Electronics”
16
- Funding: $2,400,000 (2001-2005); ((Co-PI), with Granatstein, (PI), E. Ott (Co-PI),
T. Antonsen (Co-PI), R. Rodgers (Co-PI), J. Melngailis (Co-PI), B. Jacob (Co-PI),
A. Iliadis (Co-PI), O. Ramahi (Co-PI), S. Anlage (co-PI)).
[19] ONR,
- Project Title: Reliability, Analysis and Design for Wide Bandgap Power Devices”
- Funding: $450,000, (2004-2007); ((PI), with J. Bernstein (Co-PI)).
PATENTS
[1] C-C. Shen, M. Peckerar and N. Goldsman, A High Performance EEPROM
Cell,” US provisional patent filed on April 9, 1998.
SOFTWARE
N. Goldsman and C. Chang, Demonstration of Spherical Harmonic and Hydrodynamic Device Simulation Tools developed by our research program, International
Workshop on Computational Electronics, University of Note Dame, 1997.
HARDWARE
Integrated Circuits (Chips) Designed and Fabricated with MOSIS
[1] IC name: FSK, Y. Bai and N. Goldsman, 0.5µ FSK Transmitter, MOSIS
ID#65008.
[2] IC name: diginterf, Z. Dilli and N. Goldsman, 1.5µ Test chip designed to
investigate interference and losses, MOSIS ID#64639.
[3] IC name: ringosc05, Z. Dilli and N. Goldsman, 0.5µ Test chip designed to
investigate effects of contact pads on circuit performance, MOSIS ID# 65046
Related Hardware Development
Electronics Designer for Laboratory Instrumentation, Laboratory of Atomic
and Solid State Physics, Cornell University. Responsible for the design and
construction of electronic equipment for surface physics experimentation, 19801982.
III. TEACHING AND ADVISING
EDUCATION TEXTS WRITTEN
[1] Neil Goldsman, Electronics Analysis and Design: Department course text for
ENEE 306.
[2] Neil Goldsman and Zeynep Dilli, Introduction to Electrical and Computer Engineering: An Experiential Approach, A text written as an introduction to
Electrical and Computer Engineering specially for the Maryland Governor’s
Institute of Technology at the University of Maryland
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EDUCATION RELATED CONTRACTS AND GRANTS
[1]: National Science Foundation,
-Project Title: ‘GEMSTONE: An Interdisciplinary Undergraduate Program Focusing
on the Implications of Technology’
- Funding $300,000 (1997-1999); (PI with T. Fuja, and
W. Destler, Administration subsequently transferred to C. Davis.)
This award is in support of GEMSTONE, which is an interdisciplinary program
on technology and society, which I co-directed with T. Fuja in 1996-1997.
[2]: National Science Foundation,
-Project Title: ‘A Multidisciplinary Integrated Capstone Design Curriculum for
Electrical and Computer Engineering
-Funding $100,000 (2002-2004), (PI: N. Goldsman; Co-PI’s: J. Orloff and S. Marcus)
-Senior Personnel: S. Bhattacharyya, C. Davis, R. Etienne-Cummings, W. Hawkins
K.J.R. Liu, M. Wu and G. Blankenship ).
STUDENT ADVISING
Ph.D. Students Graduated
[1] Hongchin Lin
[2] Shiuh-Luen Wang
[3] Qi Lin
[4] Kenneth Hennacy
[5] Yu-Jen Wu
[6] Unjoo Kim
[7] Wen Chao Liang
[8] Nibir Dhar
[9] Chung-Kai Lin
[10] Chienhwa Chang
[11] Zhiyi Han
[12] Chung-Kuang Huang
Current Ph.D. Students Under Supervision
[1] Gary Pennington
[2] Stephen Powell
[3] Akin Akturk
[4] Zeynep Dilli
M.S. Students Graduated with Thesis
[1] David Yonce
[2] Yun Bai
[3] Sanaz Adl
Undergraduate Student Research
Research Experience for Undergraduates: An NSF-supported program where I
have sponsored several undergraduate projects on device and circuit
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modeling and design. Students financially supported include:
[1] Kevin Shaw
[2] Bassel Al-Annouf
CURRICULUM DEVELOPMENT
New Courses Developed
[1] ENEE 694 Physics and Simulation of Semiconductor Devices I & II
http://www.ee.umd.edu/cerum/courses/courses.html
[2] ENEE 306 Microelectronics Laboratory (Wrote book for course)
http://www.ee.umd.edu/cerum/courses/417/main.html
[3] ENEE 614 Radio Frequency VLSI Circuit Design
http://www.ee.umd.edu/Academic/Grad/Gindepth/enee614.html
COURSES TAUGHT
-
ENEE 314: Electronic Circuits (2 times; average enrollment ≈ 35)
ENEE 312: Digital Electronics (3 times; average enrollment ≈ 40)
ENEE 608E: Microelectronics Seminar (3 times; enrollment ≈ 15)
ENEE 648W: Physics and Simulation of Semiconductor Devices I
(3 times; average enrollment ≈ 25)
ENEE 648L: Physics and Simulation of Semiconductor Devices II
(1 time; enrollment ≈ 15)
ENEE 697: Semiconductor Devices and Technology
(2 times; average enrollment ≈ 25)
ENEE 793: Solid-State Electronics (1 time: enrollment ≈ 15)
ENEE 696: Electronic Circuits
(2 times; average enrollment ≈ 30)
ENEE 413: Electronic Circuits Lab (2 times; average enrollment ≈ 35)
ENEE 417: Microelectronics Design Lab (1 times; enrollment ≈ 24)
ENEE 493: VLSI Design (3 times; enrollment ≈ 40)
ENEE 408D: Capstone Design: Mixed Signal VLSI Design (2 tims; enrollment ≈ 40)
GEM 101L: Gemstone program seminar (1 times; enrollment ≈ 100)
ENEE 418: Undergraduate independent study.
Supervised 6 electronics projects including the development of
a communication device for handicapped people.
IV. SERVICE
Journal Reviewer
- Journal of Applied Physics
- Applied Physics Letters
- IEEE Transactions on Electron Devices
- IEEE Electron Device Letters
19
- IEEE Transactions on CAD
- Solid-State Electronics
- Electronics Letters
Proposal Reviewer and Panel Member
- National Science Foundation
Session Organizer and Chair
- Eighth International Conference on the Numerical Analysis of Semiconductor
Devices and Integrated Circuits
Semiconductor Research Corporation Workshop on Hierachical Device
Simulation via a Web-Based Simulation Laboratory
- Section organizer and presenter, Purdue University, May 1997.
National Technology Roadmap for Semiconductors
- Co-Author of section on device modeling needs.
- Invited for final review
Conference Committee Member: 1999 International Conference on Simulation of
Semiconductor Devices and Processes. Kyoto, Japan, Sept. 1999.
Conference Subcommittee Chairperson: 2000 International Conference on Simulation of Semiconductor Devices and Processes. Seattle, WA, Sept. 2000.
Conference Committee: 2001 International Conference on Simulation of Semiconductor Devices and Processes. Athens, Greece , Sept. 2001.
Conference Committee: 2002 International Conference on Simulation of Semiconductor Devices and Processes. Kobe, Japan, Sept. 2002.
Conference Committee: 2001 International Conference on Simulation of Semiconductor Devices and Processes. Boston, MA, Sept. 2003.
Departmental Service
- General Academic Affairs Committee, 4 years
- General Academic Affairs Committee: Chair, 1 year
- Undergraduate Affairs Committee, 3 years
- Committee to Revise the Plan of Organization, 1 year
- Computer Committee, 2 years
- Graduate Studies Committee, 2 years
- Ph.D Qualifying Exam Committee, 2 years
- Strategic Planning Committee, 1 year
- Chair Search Committee, 1 year
- Salary Committee, 4 years
- Department Council, 2 years
- Department Council: Chair, 1 year
- Promotion and Tenure Committee, 2 years
- Liaison between EE Dept. and Motorola Corp. for the University Support Program
20
- Adhoc Committee to Revise Undergraduate Curriculum
- Eta Kappa Nu faculty advisor
College Service
- Gemstone (A new University Honors Program) Planning and Executive Committees
- EE representative for Undesignated Degree Program in Engineering
- ECE Technical Director: Maryland Governor’s Institute of Technology
Community
- Founder of the Forum on Responsibility and Ethics in Engineering
- Board member, Takoma Park Child Development Ctr., Takoma Park, MD.
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