3D Silicon Capacitors
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Reproduction in whole or in part is prohibited without the prior written
consent of the copyright owner. The information presented in this
document does not form part of any quotation or contract, is believed
to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its
use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
To contact us, email to: sales@ipdia.com
www.ipdia.com
Date of release:01/03/2016
Rev 2.0
Document ID: Product Line Leaflet
HSSC - High Stability and reliability Capacitors
LPSC - Low Profile Capacitors 80 µm thick
HTSC - High Temperature Capacitors up to 200°C
XTSC - Xtreme Temperature Capacitors up to 250°C
WBSC / WTSC / WXSC - Wire Bondable vertical Capacitors
WLSC - Wire bondable vertical Low profile Capacitors
EMSC - Wire bondable and EMbedded low profile Capacitors
ETSC / EXSC - High / Extreme Temperature wire bondable Capacitors up to 250°C
UBSC / ULSC - Broadband and Ultra Broadband surface mounted Capacitors up to 67 GHz+
UBEC / ULEC - Broadband and Ultra Broadband Embedded Capacitors up to 67 GHz+
UWSC - Ultra large-band Wire bondable vertical Capacitors > 26 GHz
ATSC - High Temperature Automotive Capacitors up to 200°C
Ultra large-band Wire bondable vertical Silicon Capacitors > 26 GHz (UWSC)
IPDiA 3D Silicon Capacitors
UWSC Capacitors target optical communication systems (ROSA/TOSA, SONET and all optoelectronics) as well as high speed data
systems or products. The UWSC are optimized for DC decoupling and bypass applications. They offer high rejection at > 26 GHz. The
UWSC capacitors also provide very high capacitance stability over temperature (±0.5 %) and voltage. These capacitors are compatible
with standard wire bonding assembly (ball and wedge). The bottom electrode is in Ti/Ni/Au and the top electrode is in Ti/Cu/Ni/Au.
Key Features
Finishing and Packaging
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Ultra large band performance higher than 26 GHz
Resonance free and phase stability
Unique capacitance value of 1 nF in 0101
High stability of capacitance value over temperature, voltage and aging
Ultra low ESR and ESL and high reliability
Parameters
Capacitance range
Capacitance tolerance
Operating temperature range
Storage temperature
Temperature coefficient
Breakdown voltage (BV)
Capacitance variation
versus RVDC
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Can be directly mounted on the PCB using die bonding and wire
bonding(s). Bottom electrode in Ti/Ni/Au and top electrode in Ti/Cu/
Ni/Au. Other top finishings available on request (ex: 3 µm Al/Si/Cu).
Compatible with standard wire bonding assembly (ball and wedge).
Tape and reel, waffle pack, film frame carrier or raw wafer delivery.
Value
10 pF to 100 nF(*)
± 15 %(*)
-55 °C to 150 °C
- 70 °C to 165 °C
<±0.5 %, from -55 °C to +150 °C
11 V, 30 V, 50 V, 150 V, 450 (**)
0.02 %/V (from 0 V to RVDC)
Parameters
Value
Equivalent Series Inductance(ESL)
typ 6 pH (**) @ SRF
Equivalent Series Resistance(ESR)
typ. 14 m(**)
Insulation resistance
Aging
Reliability
Capacitor height
100 G min @ RVDC, +25°C
Negligible, < 0.001 %/1000 h
FIT<0.017 parts/billion hours
Max 250 µm or 100 µm
(*) Other values on request
the Best Choice for all Demanding Applications
IPDiA high-density silicon capacitors have been developed with a semiconductor MOS process and are using the third
dimension to substantially increase the capacitor surface and thus its capacitance without increasing the capacitor footprint.
IPDiA technology is based on a monolithic structure embedded in a monocristalline substrate (mono MIM and multi MIM).
Higher reliability in a smaller package
This advanced 3D topology gives a
developed area equivalent to 80 ceramic
layers in an amazing 80 μm thickness of
active capacitance area. Thanks to a very
linear and low dispersive dielectric,
miniaturization, capacitance value and
electrical performances are optimized.
(**) e.g. 10nF/0303/BV 50V
Available parts. For other values, contact your IPDiA
sales representative
A reliability 10 times better than MLCCs
Coming from the same DNA as the semiconductor MOS process, IPDiA capacitors have a default mode fully modelized
with proven consistent data and offer therefore predictable and exceptional reliable performances. Our SiCap technology
features high reliability - up to 10 times better than alternative capacitor technologies – mainly obtained thanks to the
highly pure oxide generated during the high temperature curing. Furthermore, all electrical tests are completed at the end of
the production steps which avoids any early failure.
Available parts. For other values, contact your IPDiA sales representative.
High Temperature Automotive Silicon Capacitors up to 200°C (ATSC)
The ATSC capacitors target Under-the-Hood electronics and all sensors exposed to harsh conditions in the automotive market segment.
These automotive grade capacitors are optimized for decoupling functions. They are manufactured in IPDiA ISO-TS 16949 certified
facility, under AEC-Q100 conditions up to 200ºC.
Key Features
Finishing and Packaging
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Qualified according to AEC-Q100
Ultra long life @ 200°C
High stability of capacitance value over temperature, voltage and
aging
16 V operating voltage
Load dump
8 kV HBM ESD
Suitable for high temperature leadframe mounting
Parameters
Capacitance range
Capacitance tolerance
1 nF to 100 nF(*)
Operating temperature range
-55 to 200 °C
Storage temperature
Temperature coefficient
Breakdown Voltage (BV)
Capacitance variation versus
RVDC
- 70 to 215 °C
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Pad finishing in Aluminum (3 µm thickness +/-10%).
Applicable for high temperature wirebonding and other mountings
Tape and reel, waffle pack or wafer delivery.
Capacitance variation vs temperature
(for SiCap and MLCC technologies)
Parameters
Value
Value
Equivalent Series Inductance (ESL)
Typ 500 pH
Equivalent Series Resistance (ESR)
Typ 0.1 
Insulation resistance
50 G min @ RVDC, +25°C
20 G min @ RVDC, +200°C
30 V
Aging
Negligible, < 0.001 %/10 000 h
0.1 %/V (from 0 V to RVDC)
Reliability
Capacitor height
FIT<0.017 parts/billion hours
±15 %
±1 %, from -55 to +200°C
250 µm typ(*)
(*) Other values on request
Available parts. For other values, contact your IPDiA sales representative
Capacitance variation vs DC biasing voltage
(for SiCap and MLCC technologies)
IPDiA product ranges reflect
the benefits
of our
disruptive technology
IPDiA silicon capacitors are the best choice for all
demanding applications in medical, automotive,
communication, industrial and high reliability
market such as downhole, defense/aerospace.
IPDiA portfolio includes silicon capacitors from pF to
tens of µF and is composed of:
 Low Profile Capacitor < 80 µm thin for
decoupling inside critical space application
such as IC decoupling, MOS sensor,
broadband modules, RFID;
 High Temperature Capacitor up to 250°C with
very high stability;
 Ultra Broadband Capacitor up to 67 GHz;
 High Reliability Medical and Automotive Grade
Broadband and Ultra Broadband surface mounted Silicon Capacitors up to 67 GHz+ (UBSC, ULSC)
UBSC/ULSC Capacitors target optical communication systems (ROSA/TOSA, SONET and all optoelectronics) as well as high speed data
systems. These ultra broadband capacitors are optimized for DC blocking, feedback, coupling and bypass applications in ultra broadband
applications. They offer low insertion loss, low reflection and unique phase stability. The UBSC/ULSC capacitors provide very high
capacitance stability over temperature (±0.5%) and voltage. These capacitors are available from 16 kHz to 67 GHz+ for the UBSC and to
20 GHz for the ULSC. They are fully compatible with high speed automated pick-and-place manufacturing operations and are available
with ENIG termination.
Key Features
Finishing and Packaging
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Ultra broadband performance up to 67 GHz+
Resonance free
Phase stability
High stability of capacitance value over temperature, voltage and aging
Low ESL
High reliability
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Lead-free nickel/solder coating compatible with automatic soldering
technologies: reflow and manual. Other top finishings available on
request (ex: lead-free bumping - SAC305 type6)
Tape and reel, waffle pack, film frame carrier or raw wafer delivery.
Parameters
Capacitance range
Capacitance tolerance
Operating temperature range
Storage temperature
Temperature coefficient
Breakdown voltage (BV)
Capacitance variation
versus RVDC
Equivalent Series Inductance
(ESL)
Equivalent Series Resistance
(ESR)
Insulation resistance
Aging
Reliability
Capacitor height
Capacitor.
Available parts. For other values, contact your IPDiA sales representative.
Value
10 nF to 100 nF(*)
± 15 %(*)
-55 °C to 150 °C
- 70 °C to 165 °C
<±0.5 %, from -55 °C to +150 °C
11 V, 30 V(*)
0.1 %/V (from 0 V to RVDC)
Max 100 pH(**) @ SRF
Max 400 m (**)
100 G min @ RVDC, +25°C
Negligible, < 0.001 %/1000 h
FIT<0.017 parts/billion hours
Max 400 µm or 100 µm
(*) Other values on request
(**) e.g. 100 nF/0402/BV 11V
Broadband and Ultra Broadband Embedded Silicon Capacitors up to 67 GHz+ (UBEC, ULEC)
UBEC/ULEC Capacitors target optical communication systems (ROSA/TOSA, SONET and all optoelectronics) as well as high speed data
systems or products. The UBEC/ULEC are optimized for DC decoupling and bypass applications. They offer high rejection up to 67
GHz+ for the UBEC and up to 20 GHz for the ULEC. The UBEC/ULEC capacitors also provide very high capacitance stability over
temperature (±0.5 %) and voltage. These capacitors are compatible with standard wire bonding assembly (ball and wedge). Top
electrodes are in 3µm Aluminum (Al/Si/Cu).
Key Features
Finishing and Packaging
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Ultra broadband performance up to 67 GHz+
Resonance free
Phase stability
High stability of capacitance value over temperature, voltage and aging
Low ESL
High reliability
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IPDiA operates design centers, sales and marketing offices and a manufacturing facility of 10 000 m2 (110000 ft2) certified
ISO 9001 / 14001, ISO TS16949 for the automotive market as well as ISO 13485 for medical devices.
Please refer to our website www.ipdia.com to get the latest versions of our commercial and technical leaflets.
Please download the assembly instructions on www.ipdia.com/assembly and read them carefully before use.
Available parts.
For other values, contact your IPDiA sales representative
Available parts. For other values, contact your IPDiA sales representative.
Can be directly mounted on the PCB using die bonding and wire
bonding(s). Capacitors with top electrodes in 3 µm Aluminum (Al/Si/
Cu). Other top finishings available on request (ex: Ti/Cu/Ni/Au).
Compatible with standard wire bonding assembly (ball and wedge).
Tape and reel, waffle pack, film frame carrier or raw wafer delivery.
Parameters
Capacitance range
Capacitance tolerance
Operating temperature range
Storage temperature
Temperature coefficient
Breakdown voltage (BV)
Capacitance variation
versus RVDC
Equivalent Series Inductance
(ESL)
Equivalent Series Resistance
(ESR)
Insulation resistance
Aging
Reliability
Capacitor height
(*) Other values on request.
(**) e.g. 100nF/0404/BV 11V
Value
1 nF to 100 nF(*)
± 15 %(*)
-55 °C to 150 °C
- 70 °C to 165 °C
<±0.5 %, from -55 °C to +150 °C
11 V, 30 V(*)
0.1 %/V (from 0 V to RVDC)
Max 50 pH(**) @ SRF
Max 700 m (**)
100 G min @ RVDC, +25°C
Negligible, < 0.001 %/1000 h
FIT<0.017 parts/billion hours
Max 100 µm
Wire bondable and EMbedded low profile Silicon Capacitors (EMSC)
High Stability and reliability Silicon Capacitors (JEDEC/EIA compatible) (HSSC)
IPDiA EMbedded Silicon Capacitors are designed to be compliant with the embedding process for printed circuit board and laminates. The
EMSC can also be used with wire bond technologies. Thanks to the high robustness and performance of these silicon passive
components, embedded processes are now reliable. The EMSC are available with thicknesses down to 80 μm and are the most
appropriate solution for Chip On Board, Chip On Foil, Chip On Glass, Chip On Ceramic, flip chip and embedded applications.
IPDiA High Stability Silicon Capacitors avoid the need to oversize the capacitor value for sensitive capacitive circuitry and offer a higher
DC voltage stability. The PICS technology developed by IPDiA provides outstanding capacitor stability over the full operating voltage &
temperature ranges. The very high and stable insulation resistance of silicon capacitors can improve battery lifetime up to 30% in mobile
applications.
Key Features
Finishing and Packaging
Key Features
Finishing and Packaging
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Ultra Low profile 100 µm
High stability (temperature, voltage and ageing)
Low ESL and ESR
Low leakage current
High reliability
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Pad finishing in Aluminum. Other finishing available such as copper,
nickel or gold. Applicable for almost all embedded applications.
Tape and reel, tray, waffle pack or wafer delivery
Parameters
Capacitance range
Capacitance tolerances
Operating temperature range
Storage temperature range
Temperature coefficient
Breakdown Voltage (BV)
Capacitance variation versus
RVDC
Equivalent Series Inductor (ESL)
Equivalent Series Resistor (ESR)
Insulation resistance
Aging
Reliability
Capacitor height
Available parts. For other values, contact your IPDiA sales representative.
Ultra High stability (temperature, voltage, ageing)
Low leakage current (high insulation resistance)
Very low ESR and ESL
Negligible capacitance change with temperature variation
Low profile
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Value
Parameters
390 pF to 4.7 µF
±15 %(**)
BV 11V
-55°C to 150°C
-70°C to 165°C
BV 30V
<±0.5 %, from -55°C to +150°C
30V, 11V
0.1%/V (from 0 to RVDC)
Max 100 pH
Max 100 mΩ
Min 100 GΩ @ 3V, 25°C
Available parts. For other values, contact your IPDiA sales representative.
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Ultra High operating temperature
- ETSC: up to 200°C
- EXSC: up to 250°C
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Low profile (250 µm)
High stability (Temperature, Voltage and ageing)
Low leakage current
High reliability
Parameters
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-55°C to 150°C
Storage temperature range
-70°C to 165°C
Temperature coefficient
Breakdown Voltage (BV)
Capacitance variation versus RVDC
Equivalent Series Inductor (ESL)
Equivalent Series Resistor (ESR)
<±0.5 %, from -55°C to +150°C
11VDC or 30VDC
0.1%/V (from 0 to RVDC)
Max 100 pH (*)
Max 200 mΩ(*)
100 GΩ min @ 3V, from
–55°C to + 150°C
Negligible, < 0.001% / 1000h
FIT<0.017 parts / billions hours
Max 400 µm
IPDiA 3D Silicon Capacitors target antenna matching, RF filtering and decoupling of active dies, in applications with height and volume
constraints. The LPSC offer low profile (100 µm thin, 80 µm on request), with very high stability upon applied voltage, up to 150°C, with
very low leakage current and high level performances dedicated to industries such as Smart Card, RFID tags, medical and others where
integration plays a key role. The LPSC product family is split into two series:
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the LPSC range from 10 pF to 3.3 µF, suitable for embedded technologies, modules, system in package, when designers are
looking for utmost decoupling behaviours;
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and the LPSC ESD Enhanced range from 10 pF up to 330 pF that works efficiently and durably in RFID environments. Thanks to
the full modeling of the elementary cell, the ESD capabilities have been optimized up to 8 kV (see Key Features below).
Furthermore, our RFID Silicon capacitor range has been fine tuned in order to reach SRF higher than 1.2 GHz, hence allowing
unique fine tuning of the antenna, from 13.56 MHz up to UHF (800/900 MHz) applications.
Pad finishing in Aluminum. Other finishing available such as copper,
nickel or gold.
Tape and reel, tray, waffle pack or wafer delivery
Available parts. For other values, contact your IPDiA sales representative.
±15%(*)
Operating temperature range
Low Profile Silicon Capacitors 80 µm thick (LPSC)
IPDiA ETSC and EXSC Series are designed to be compliant with high temperature wire bond technologies with Aluminum pads for
Aluminum wedge bonding and gold pads on request for gold wire bonding. ETSC and EXSC Silicon Capacitors feature low profile (250
µm), low leakage current and high operating temperature (ETSC up to 200°C/ EXSC up to 250°C) with high stability with temperature,
voltage and negligible capacitance loss through aging. Applications include downhole and defense industries, decoupling, filtering, charge
pump, replacement of X8R and C0G dielectrics, and high reliability applications, mainly for Multi-Chip Module assemblies.
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Capacitance tolerances
(*) Other values on request
High / Extreme Temperature wire bondable Silicon Capacitors up to 250°C (ETSC, EXSC)
Finishing and Packaging
10 pF to 3.3 µF(*)
Aging
Reliability
Capacitor height
80 µm thickness on request
(**)
Other values on request
Value
Capacitance range
Insulation resistance
Negligible, < 0.001% / 10000h
FIT<0.017 parts / billions hours
Max 100 µm(*)
(*)
Key Features
Lead-free nickel/solder coating compatible with automatic soldering
technologies (reflow and manual). Other terminations available on
request.
Tape and reel, tray, waffle pack or wafer delivery.
Key Features
Finishing and Packaging
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Value
Ultra low profile (100 µm, 80 µm on request)
High Q
Voltage stability
High ESD capabilities (ESD enhanced series):
>1 kV for 47 pF
>1.5 kV for 100 pF
>8 kV for 330 pF
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Capacitance range
Capacitance tolerances
Operating temperature range
Storage temperature range
Temperature coefficient
Breakdown Voltage (BV)
Capacitance variation versus RVDC
Equivalent Series Inductor (ESL)
Equivalent Series Resistor (ESR)
390 pF to 4.7 µF
Insulation resistance
50 GΩ min @ 3V, 25°C
10 GΩ min @ 3V, 250°C
Aging
Reliability
Capacitor height
Negligible, < 0.001% / 10000h
FIT<0.017 parts / billions hours
BV 11V
Max 250 µm
BV 30V
±15 %(*)
-55°C to 250°C
-70°C to 265°C
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Lead-free NiAu finishing compatible with wirebonding or leadframe
soldering. Aluminum pads on request.
Wafers, on foil, sawn and grinded. Raw wafers. Tape and reel.
Low leakage current down to 100 pA
Low ESL and low ESR
SRF > 1.2GHz
Parameters
<±1,5 %, from -55°C to +250°C
30V, 11V
0.1%/V (from 0 to RVDC)
Max 100 pH
Max 100 mΩ
Other values on request
Available parts. For other values, contact your IPDiA sales representative.
Capacitance range
Capacitance tolerances
Operating temperature range
Storage temperature range
Temperature coefficient
Breakdown Voltage
Capacitance variation versus RVDC
Equivalent Series Inductor (ESL)
Equivalent Series Resistor (ESR)
Insulation resistance
Aging
Reliability
Capacitor height
(*) Other values on request
Value
10 pF to 3.3µF(*)
±15 %(*)
-55°C to 150°C (*)
-70°C to 165°C
<±0.5 %, from -55°C to +150°C
11VDC or 30VDC
0.1%/V (from 0 to RVDC)
Typ 200 pH (*)
Max 100 mΩ(*)
Min 100 GΩ @ 3V, 25°C
Negligible, < 0.001% / 10000h
FIT<0.017 parts / billions hours
Max 100 µm(*)
High Temperature Silicon Capacitors (up to 200°C - JEDEC/EIA compatible) (HTSC)
Wire Bondable vertical Silicon Capacitors (WBSC, WTSC, WXSC)
The Wire Bonding vertical Silicon Capacitors target RF High Power applications for wireless communication, radar and data
broadcasting systems. They are suitable for DC decoupling, matching network, and harmonic / noise filtering functions. They offer ultra
high stability of capacitance value with temperature, voltage, and aging. The Wire Bonding vertical range is available up to +150ºC
(WBSC), up to +200ºC (WTSC) and up to +250ºC (WXSC).
Thanks to the unique IPDiA silicon capacitor technology, most of the problems encountered in demanding applications can now be
solved. High Temperature Silicon Capacitors are dedicated to applications where reliability up to 200 °C is the main parameter. The
capacitor integration capability (up to 250 nF/mm²) offers capacitance value similar to what is obtained with X7R dielectric, but with
better electrical performance than C0G/NP0 dielectrics at 200 °C. HTSC provides the highest capacitor stability ever reached over the
full temperature range -55 °C/+200 °C with a temperature coefficient lower than ±1%.
Key Features
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Finishing and Packaging
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Extended operating temperature range (up to 200°C)
with low capacitance variation
High stability
High reliability
Low leakage current
Very low ESR and ESL
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Lead-free nickel/solder coating compatible with automatic soldering
technologies (reflow and manual). Other terminations available upon
request.
Tape and reel, tray, waffle pack or wafer delivery.
Key Features
Finishing and Packaging
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Low profile 250 µm
Low leakage current
High stability (temperature and voltage)
Negligible capacitance loss through ageing
Parameters
Parameters
Capacitance range
Capacitance tolerance
Operating temperature range
Storage temperature range
Temperature coefficient
Breakdown Voltage (BV)
Capacitance variation versus
RVDC
Equivalent Series Inductor (ESL)
Equivalent Series Resistor (ESR)
BV 11V
BV 30V
Available parts. For other values, contact your IPDiA sales representative.
Insulation resistance
Ageing
Reliability
Capacitor height
Value
10 pF to 3.3 µF
(*)
-55°C to 200°C (*)
10 pF to 22 nF
±15 % (*)
Operating temperature range
-55 °C to 250°C (*)
Storage temperature range
-70°C to 265°C
Temperature coefficient
<±1.5 %, from -55°C to +250°C
<±1.0 %, from -55°C to +200°C
<±0.5 %, from -55°C to +150°C
Finishing and Packaging
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BV 30V
Available parts. For other values, contact your IPDiA sales representative.
Insulation resistance
Ageing
Reliability
Capacitor height
Typ 50 m
Insulation resistance
50 G min @ RVDC, 25°C
10 G min @ RVDC, 250°C
Capacitor height
Max 250 µm(*)
(*) Other values upon request
BV 450V
BV 50V
BV 150V
BV 30V
BV 11V
Max 400 µm(*)
Available parts. For other values, contact your IPDiA sales representative.
Wire Bondable vertical Low profile Silicon Capacitors (WLSC)
Parameters
BV 11V
Typ 50 pH
Equivalent Series Resistor (ESR)
Max 400 m (*)
50 G min @ RVDC, 25°C
20 G min @ RVDC, 200°C
Negligible, <0.001% / 1000h
FIT <0.017 parts / billion hours
Lead-free nickel/solder coating compatible with automatic soldering
technologies (reflow and manual). Other terminations available upon
request.
Tape and reel, tray, waffle pack or wafer delivery.
Capacitance range
Capacitance tolerance
Operating temperature range
Storage temperature range
Temperature coefficient
Breakdown Voltage (BV)
Capacitance variation versus
RVDC
Equivalent Series Inductor (ESL)
Equivalent Series Resistor (ESR)
Value
Equivalent Series Inductor (ESL)
Max 100 pH (*)
The WLSC low profile capacitors target RF High Power applications with height and volume constraints and can address wireless
communication, radar and data broadcasting systems. The WLSC is suitable for DC decoupling, matching network, and harmonic /
noise filtering functions. The unique technology of integrated passive devices in silicon developed by IPDiA, can solve most of the
problems encountered in demanding applications. These Si capacitors in ultra–deep trenches have been developed with a
semiconductor process which enables the integration of high capacitance density from 1.3 nF/mm² to 250 nF/mm² (with a breakdown
voltage of respectively 450 V to 11 V).
The Xtreme Temperature Silicon Capacitors are ideal for applications subject to extreme conditions up to 250 °C. For instance, XTSC
range offers a 1 µF in 1206 with a TC<±1.5% over the full -55 °C/+250 °C temperature range. Ageing, stability of insulation resistance
and capacitor value have been optimized to obtain the best product for Hi-Rel applications.
Extended operating temperature range (up to 250 °C)
with low capacitance variation
High stability
High reliability
Low leakage current
Very low ESR and ESL
Parameters
0.1% /V (from 0 to RVDC)
Xtreme Temperature Silicon Capacitors (up to 250°C - JEDEC/EIA compatible) (XTSC)
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Value
(*)
Capacitance tolerance
-70°C to 215°C
<±1 %, from -55°C to +200°C
11VDC or 30VDC
(*) Other values upon request
Key Features
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Capacitance range
±15 % (*)
Can be directly mounted on the PCB using die bonding and wire
bonding(s). Bottom electrode in Ti/Ni/Au and top electrode in Ti/Cu/
Ni/Au. Other top finishings available on request (ex: 3 µm Al/Si/Cu).
Compatible with standard wire bonding assembly (ball and wedge)
Tape and reel, waffle pack, film frame carrier or raw wafer delivery
Value
10 pF to 3.3 µF
(*)
±15 % (*)
-55°C to 250°C (*)
-70°C to 265°C
<±1,5 %, from -55°C to +250°C
11VDC or 30VDC
Key Features
Finishing and Packaging
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Ultra low profile 100 µm
Low leakage current
High stability (temperature and voltage)
Negligible capacitance loss through ageing
Parameters
Capacitance range
Capacitance tolerance
Operating temperature range
Storage temperature range
Temperature coefficient
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Value
10 pF to 22 nF(*)
±15 %
(*)
-55 °C to 150°C (*)
-70°C to 165°C
0 ±24 ppm/°C, from -55°C to +150°C
Can be directly mounted on the PCB using die bonding and wire
bonding(s). Bottom electrode in Ti/Ni/Au and top electrode in Ti/Cu/
Ni/Au. Other top finishings available on request (ex: 3 µm Al/Si/Cu).
Compatible with standard wire bonding assembly (ball and wedge).
Tape and reel, waffle pack, film frame carrier or raw wafer delivery.
Parameters
Equivalent Series Inductor (ESL)
Equivalent Series Resistor (ESR)
Insulation resistance
Capacitor height
(*) Other values upon request
Value
Typ 50 pH
Typ 50 m
50 G min @ RVDC, 25°C
10 G min @ RVDC, 250°C
Max 100 µm(*)
0.1% /V (from 0 to RVDC)
Max 100 pH (*)
Max 400 m (*)
50 G min @ RVDC, 25°C
10 G min @ RVDC, 250°C
Negligible, <0.001% / 1000h
FIT <0.017 parts / billion hours
Max 400 µm(*)
(*) Other values upon request
Available parts. For other values, contact your IPDiA sales representative.
BV 450V
BV 50V
BV 150V
BV 30V
BV 11V
High Temperature Silicon Capacitors (up to 200°C - JEDEC/EIA compatible) (HTSC)
Wire Bondable vertical Silicon Capacitors (WBSC, WTSC, WXSC)
The Wire Bonding vertical Silicon Capacitors target RF High Power applications for wireless communication, radar and data
broadcasting systems. They are suitable for DC decoupling, matching network, and harmonic / noise filtering functions. They offer ultra
high stability of capacitance value with temperature, voltage, and aging. The Wire Bonding vertical range is available up to +150ºC
(WBSC), up to +200ºC (WTSC) and up to +250ºC (WXSC).
Thanks to the unique IPDiA silicon capacitor technology, most of the problems encountered in demanding applications can now be
solved. High Temperature Silicon Capacitors are dedicated to applications where reliability up to 200 °C is the main parameter. The
capacitor integration capability (up to 250 nF/mm²) offers capacitance value similar to what is obtained with X7R dielectric, but with
better electrical performance than C0G/NP0 dielectrics at 200 °C. HTSC provides the highest capacitor stability ever reached over the
full temperature range -55 °C/+200 °C with a temperature coefficient lower than ±1%.
Key Features





Finishing and Packaging

Extended operating temperature range (up to 200°C)
with low capacitance variation
High stability
High reliability
Low leakage current
Very low ESR and ESL

Lead-free nickel/solder coating compatible with automatic soldering
technologies (reflow and manual). Other terminations available upon
request.
Tape and reel, tray, waffle pack or wafer delivery.
Key Features
Finishing and Packaging





Low profile 250 µm
Low leakage current
High stability (temperature and voltage)
Negligible capacitance loss through ageing
Parameters
Parameters
Capacitance range
Capacitance tolerance
Operating temperature range
Storage temperature range
Temperature coefficient
Breakdown Voltage (BV)
Capacitance variation versus
RVDC
Equivalent Series Inductor (ESL)
Equivalent Series Resistor (ESR)
BV 11V
BV 30V
Available parts. For other values, contact your IPDiA sales representative.
Insulation resistance
Ageing
Reliability
Capacitor height
Value
10 pF to 3.3 µF
(*)
-55°C to 200°C (*)
10 pF to 22 nF
±15 % (*)
Operating temperature range
-55 °C to 250°C (*)
Storage temperature range
-70°C to 265°C
Temperature coefficient
<±1.5 %, from -55°C to +250°C
<±1.0 %, from -55°C to +200°C
<±0.5 %, from -55°C to +150°C
Finishing and Packaging






BV 30V
Available parts. For other values, contact your IPDiA sales representative.
Insulation resistance
Ageing
Reliability
Capacitor height
Typ 50 m
Insulation resistance
50 G min @ RVDC, 25°C
10 G min @ RVDC, 250°C
Capacitor height
Max 250 µm(*)
(*) Other values upon request
BV 450V
BV 50V
BV 150V
BV 30V
BV 11V
Max 400 µm(*)
Available parts. For other values, contact your IPDiA sales representative.
Wire Bondable vertical Low profile Silicon Capacitors (WLSC)
Parameters
BV 11V
Typ 50 pH
Equivalent Series Resistor (ESR)
Max 400 m (*)
50 G min @ RVDC, 25°C
20 G min @ RVDC, 200°C
Negligible, <0.001% / 1000h
FIT <0.017 parts / billion hours
Lead-free nickel/solder coating compatible with automatic soldering
technologies (reflow and manual). Other terminations available upon
request.
Tape and reel, tray, waffle pack or wafer delivery.
Capacitance range
Capacitance tolerance
Operating temperature range
Storage temperature range
Temperature coefficient
Breakdown Voltage (BV)
Capacitance variation versus
RVDC
Equivalent Series Inductor (ESL)
Equivalent Series Resistor (ESR)
Value
Equivalent Series Inductor (ESL)
Max 100 pH (*)
The WLSC low profile capacitors target RF High Power applications with height and volume constraints and can address wireless
communication, radar and data broadcasting systems. The WLSC is suitable for DC decoupling, matching network, and harmonic /
noise filtering functions. The unique technology of integrated passive devices in silicon developed by IPDiA, can solve most of the
problems encountered in demanding applications. These Si capacitors in ultra–deep trenches have been developed with a
semiconductor process which enables the integration of high capacitance density from 1.3 nF/mm² to 250 nF/mm² (with a breakdown
voltage of respectively 450 V to 11 V).
The Xtreme Temperature Silicon Capacitors are ideal for applications subject to extreme conditions up to 250 °C. For instance, XTSC
range offers a 1 µF in 1206 with a TC<±1.5% over the full -55 °C/+250 °C temperature range. Ageing, stability of insulation resistance
and capacitor value have been optimized to obtain the best product for Hi-Rel applications.
Extended operating temperature range (up to 250 °C)
with low capacitance variation
High stability
High reliability
Low leakage current
Very low ESR and ESL
Parameters
0.1% /V (from 0 to RVDC)
Xtreme Temperature Silicon Capacitors (up to 250°C - JEDEC/EIA compatible) (XTSC)

Value
(*)
Capacitance tolerance
-70°C to 215°C
<±1 %, from -55°C to +200°C
11VDC or 30VDC
(*) Other values upon request
Key Features

Capacitance range
±15 % (*)
Can be directly mounted on the PCB using die bonding and wire
bonding(s). Bottom electrode in Ti/Ni/Au and top electrode in Ti/Cu/
Ni/Au. Other top finishings available on request (ex: 3 µm Al/Si/Cu).
Compatible with standard wire bonding assembly (ball and wedge)
Tape and reel, waffle pack, film frame carrier or raw wafer delivery
Value
10 pF to 3.3 µF
(*)
±15 % (*)
-55°C to 250°C (*)
-70°C to 265°C
<±1,5 %, from -55°C to +250°C
11VDC or 30VDC
Key Features
Finishing and Packaging





Ultra low profile 100 µm
Low leakage current
High stability (temperature and voltage)
Negligible capacitance loss through ageing
Parameters
Capacitance range
Capacitance tolerance
Operating temperature range
Storage temperature range
Temperature coefficient

Value
10 pF to 22 nF(*)
±15 %
(*)
-55 °C to 150°C (*)
-70°C to 165°C
0 ±24 ppm/°C, from -55°C to +150°C
Can be directly mounted on the PCB using die bonding and wire
bonding(s). Bottom electrode in Ti/Ni/Au and top electrode in Ti/Cu/
Ni/Au. Other top finishings available on request (ex: 3 µm Al/Si/Cu).
Compatible with standard wire bonding assembly (ball and wedge).
Tape and reel, waffle pack, film frame carrier or raw wafer delivery.
Parameters
Equivalent Series Inductor (ESL)
Equivalent Series Resistor (ESR)
Insulation resistance
Capacitor height
(*) Other values upon request
Value
Typ 50 pH
Typ 50 m
50 G min @ RVDC, 25°C
10 G min @ RVDC, 250°C
Max 100 µm(*)
0.1% /V (from 0 to RVDC)
Max 100 pH (*)
Max 400 m (*)
50 G min @ RVDC, 25°C
10 G min @ RVDC, 250°C
Negligible, <0.001% / 1000h
FIT <0.017 parts / billion hours
Max 400 µm(*)
(*) Other values upon request
Available parts. For other values, contact your IPDiA sales representative.
BV 450V
BV 50V
BV 150V
BV 30V
BV 11V
Wire bondable and EMbedded low profile Silicon Capacitors (EMSC)
High Stability and reliability Silicon Capacitors (JEDEC/EIA compatible) (HSSC)
IPDiA EMbedded Silicon Capacitors are designed to be compliant with the embedding process for printed circuit board and laminates. The
EMSC can also be used with wire bond technologies. Thanks to the high robustness and performance of these silicon passive
components, embedded processes are now reliable. The EMSC are available with thicknesses down to 80 μm and are the most
appropriate solution for Chip On Board, Chip On Foil, Chip On Glass, Chip On Ceramic, flip chip and embedded applications.
IPDiA High Stability Silicon Capacitors avoid the need to oversize the capacitor value for sensitive capacitive circuitry and offer a higher
DC voltage stability. The PICS technology developed by IPDiA provides outstanding capacitor stability over the full operating voltage &
temperature ranges. The very high and stable insulation resistance of silicon capacitors can improve battery lifetime up to 30% in mobile
applications.
Key Features
Finishing and Packaging
Key Features
Finishing and Packaging





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





Ultra Low profile 100 µm
High stability (temperature, voltage and ageing)
Low ESL and ESR
Low leakage current
High reliability

Pad finishing in Aluminum. Other finishing available such as copper,
nickel or gold. Applicable for almost all embedded applications.
Tape and reel, tray, waffle pack or wafer delivery
Parameters
Capacitance range
Capacitance tolerances
Operating temperature range
Storage temperature range
Temperature coefficient
Breakdown Voltage (BV)
Capacitance variation versus
RVDC
Equivalent Series Inductor (ESL)
Equivalent Series Resistor (ESR)
Insulation resistance
Aging
Reliability
Capacitor height
Available parts. For other values, contact your IPDiA sales representative.
Ultra High stability (temperature, voltage, ageing)
Low leakage current (high insulation resistance)
Very low ESR and ESL
Negligible capacitance change with temperature variation
Low profile

Value
Parameters
390 pF to 4.7 µF
±15 %(**)
BV 11V
-55°C to 150°C
-70°C to 165°C
BV 30V
<±0.5 %, from -55°C to +150°C
30V, 11V
0.1%/V (from 0 to RVDC)
Max 100 pH
Max 100 mΩ
Min 100 GΩ @ 3V, 25°C
Available parts. For other values, contact your IPDiA sales representative.


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Ultra High operating temperature
- ETSC: up to 200°C
- EXSC: up to 250°C

Low profile (250 µm)
High stability (Temperature, Voltage and ageing)
Low leakage current
High reliability
Parameters
(*)
-55°C to 150°C
Storage temperature range
-70°C to 165°C
Temperature coefficient
Breakdown Voltage (BV)
Capacitance variation versus RVDC
Equivalent Series Inductor (ESL)
Equivalent Series Resistor (ESR)
<±0.5 %, from -55°C to +150°C
11VDC or 30VDC
0.1%/V (from 0 to RVDC)
Max 100 pH (*)
Max 200 mΩ(*)
100 GΩ min @ 3V, from
–55°C to + 150°C
Negligible, < 0.001% / 1000h
FIT<0.017 parts / billions hours
Max 400 µm
IPDiA 3D Silicon Capacitors target antenna matching, RF filtering and decoupling of active dies, in applications with height and volume
constraints. The LPSC offer low profile (100 µm thin, 80 µm on request), with very high stability upon applied voltage, up to 150°C, with
very low leakage current and high level performances dedicated to industries such as Smart Card, RFID tags, medical and others where
integration plays a key role. The LPSC product family is split into two series:

the LPSC range from 10 pF to 3.3 µF, suitable for embedded technologies, modules, system in package, when designers are
looking for utmost decoupling behaviours;

and the LPSC ESD Enhanced range from 10 pF up to 330 pF that works efficiently and durably in RFID environments. Thanks to
the full modeling of the elementary cell, the ESD capabilities have been optimized up to 8 kV (see Key Features below).
Furthermore, our RFID Silicon capacitor range has been fine tuned in order to reach SRF higher than 1.2 GHz, hence allowing
unique fine tuning of the antenna, from 13.56 MHz up to UHF (800/900 MHz) applications.
Pad finishing in Aluminum. Other finishing available such as copper,
nickel or gold.
Tape and reel, tray, waffle pack or wafer delivery
Available parts. For other values, contact your IPDiA sales representative.
±15%(*)
Operating temperature range
Low Profile Silicon Capacitors 80 µm thick (LPSC)
IPDiA ETSC and EXSC Series are designed to be compliant with high temperature wire bond technologies with Aluminum pads for
Aluminum wedge bonding and gold pads on request for gold wire bonding. ETSC and EXSC Silicon Capacitors feature low profile (250
µm), low leakage current and high operating temperature (ETSC up to 200°C/ EXSC up to 250°C) with high stability with temperature,
voltage and negligible capacitance loss through aging. Applications include downhole and defense industries, decoupling, filtering, charge
pump, replacement of X8R and C0G dielectrics, and high reliability applications, mainly for Multi-Chip Module assemblies.

Capacitance tolerances
(*) Other values on request
High / Extreme Temperature wire bondable Silicon Capacitors up to 250°C (ETSC, EXSC)
Finishing and Packaging
10 pF to 3.3 µF(*)
Aging
Reliability
Capacitor height
80 µm thickness on request
(**)
Other values on request
Value
Capacitance range
Insulation resistance
Negligible, < 0.001% / 10000h
FIT<0.017 parts / billions hours
Max 100 µm(*)
(*)
Key Features
Lead-free nickel/solder coating compatible with automatic soldering
technologies (reflow and manual). Other terminations available on
request.
Tape and reel, tray, waffle pack or wafer delivery.
Key Features
Finishing and Packaging





Value
Ultra low profile (100 µm, 80 µm on request)
High Q
Voltage stability
High ESD capabilities (ESD enhanced series):
>1 kV for 47 pF
>1.5 kV for 100 pF
>8 kV for 330 pF

Capacitance range
Capacitance tolerances
Operating temperature range
Storage temperature range
Temperature coefficient
Breakdown Voltage (BV)
Capacitance variation versus RVDC
Equivalent Series Inductor (ESL)
Equivalent Series Resistor (ESR)
390 pF to 4.7 µF
Insulation resistance
50 GΩ min @ 3V, 25°C
10 GΩ min @ 3V, 250°C
Aging
Reliability
Capacitor height
Negligible, < 0.001% / 10000h
FIT<0.017 parts / billions hours
BV 11V
Max 250 µm
BV 30V
±15 %(*)
-55°C to 250°C
-70°C to 265°C



Lead-free NiAu finishing compatible with wirebonding or leadframe
soldering. Aluminum pads on request.
Wafers, on foil, sawn and grinded. Raw wafers. Tape and reel.
Low leakage current down to 100 pA
Low ESL and low ESR
SRF > 1.2GHz
Parameters
<±1,5 %, from -55°C to +250°C
30V, 11V
0.1%/V (from 0 to RVDC)
Max 100 pH
Max 100 mΩ
Other values on request
Available parts. For other values, contact your IPDiA sales representative.
Capacitance range
Capacitance tolerances
Operating temperature range
Storage temperature range
Temperature coefficient
Breakdown Voltage
Capacitance variation versus RVDC
Equivalent Series Inductor (ESL)
Equivalent Series Resistor (ESR)
Insulation resistance
Aging
Reliability
Capacitor height
(*) Other values on request
Value
10 pF to 3.3µF(*)
±15 %(*)
-55°C to 150°C (*)
-70°C to 165°C
<±0.5 %, from -55°C to +150°C
11VDC or 30VDC
0.1%/V (from 0 to RVDC)
Typ 200 pH (*)
Max 100 mΩ(*)
Min 100 GΩ @ 3V, 25°C
Negligible, < 0.001% / 10000h
FIT<0.017 parts / billions hours
Max 100 µm(*)
IPDiA product ranges reflect
the benefits
of our
disruptive technology
IPDiA silicon capacitors are the best choice for all
demanding applications in medical, automotive,
communication, industrial and high reliability
market such as downhole, defense/aerospace.
IPDiA portfolio includes silicon capacitors from pF to
tens of µF and is composed of:
 Low Profile Capacitor < 80 µm thin for
decoupling inside critical space application
such as IC decoupling, MOS sensor,
broadband modules, RFID;
 High Temperature Capacitor up to 250°C with
very high stability;
 Ultra Broadband Capacitor up to 67 GHz;
 High Reliability Medical and Automotive Grade
Broadband and Ultra Broadband surface mounted Silicon Capacitors up to 67 GHz+ (UBSC, ULSC)
UBSC/ULSC Capacitors target optical communication systems (ROSA/TOSA, SONET and all optoelectronics) as well as high speed data
systems. These ultra broadband capacitors are optimized for DC blocking, feedback, coupling and bypass applications in ultra broadband
applications. They offer low insertion loss, low reflection and unique phase stability. The UBSC/ULSC capacitors provide very high
capacitance stability over temperature (±0.5%) and voltage. These capacitors are available from 16 kHz to 67 GHz+ for the UBSC and to
20 GHz for the ULSC. They are fully compatible with high speed automated pick-and-place manufacturing operations and are available
with ENIG termination.
Key Features
Finishing and Packaging







Ultra broadband performance up to 67 GHz+
Resonance free
Phase stability
High stability of capacitance value over temperature, voltage and aging
Low ESL
High reliability

Lead-free nickel/solder coating compatible with automatic soldering
technologies: reflow and manual. Other top finishings available on
request (ex: lead-free bumping - SAC305 type6)
Tape and reel, waffle pack, film frame carrier or raw wafer delivery.
Parameters
Capacitance range
Capacitance tolerance
Operating temperature range
Storage temperature
Temperature coefficient
Breakdown voltage (BV)
Capacitance variation
versus RVDC
Equivalent Series Inductance
(ESL)
Equivalent Series Resistance
(ESR)
Insulation resistance
Aging
Reliability
Capacitor height
Capacitor.
Available parts. For other values, contact your IPDiA sales representative.
Value
10 nF to 100 nF(*)
± 15 %(*)
-55 °C to 150 °C
- 70 °C to 165 °C
<±0.5 %, from -55 °C to +150 °C
11 V, 30 V(*)
0.1 %/V (from 0 V to RVDC)
Max 100 pH(**) @ SRF
Max 400 m (**)
100 G min @ RVDC, +25°C
Negligible, < 0.001 %/1000 h
FIT<0.017 parts/billion hours
Max 400 µm or 100 µm
(*) Other values on request
(**) e.g. 100 nF/0402/BV 11V
Broadband and Ultra Broadband Embedded Silicon Capacitors up to 67 GHz+ (UBEC, ULEC)
UBEC/ULEC Capacitors target optical communication systems (ROSA/TOSA, SONET and all optoelectronics) as well as high speed data
systems or products. The UBEC/ULEC are optimized for DC decoupling and bypass applications. They offer high rejection up to 67
GHz+ for the UBEC and up to 20 GHz for the ULEC. The UBEC/ULEC capacitors also provide very high capacitance stability over
temperature (±0.5 %) and voltage. These capacitors are compatible with standard wire bonding assembly (ball and wedge). Top
electrodes are in 3µm Aluminum (Al/Si/Cu).
Key Features
Finishing and Packaging







Ultra broadband performance up to 67 GHz+
Resonance free
Phase stability
High stability of capacitance value over temperature, voltage and aging
Low ESL
High reliability

IPDiA operates design centers, sales and marketing offices and a manufacturing facility of 10 000 m2 (110000 ft2) certified
ISO 9001 / 14001, ISO TS16949 for the automotive market as well as ISO 13485 for medical devices.
Please refer to our website www.ipdia.com to get the latest versions of our commercial and technical leaflets.
Please download the assembly instructions on www.ipdia.com/assembly and read them carefully before use.
Available parts.
For other values, contact your IPDiA sales representative
Available parts. For other values, contact your IPDiA sales representative.
Can be directly mounted on the PCB using die bonding and wire
bonding(s). Capacitors with top electrodes in 3 µm Aluminum (Al/Si/
Cu). Other top finishings available on request (ex: Ti/Cu/Ni/Au).
Compatible with standard wire bonding assembly (ball and wedge).
Tape and reel, waffle pack, film frame carrier or raw wafer delivery.
Parameters
Capacitance range
Capacitance tolerance
Operating temperature range
Storage temperature
Temperature coefficient
Breakdown voltage (BV)
Capacitance variation
versus RVDC
Equivalent Series Inductance
(ESL)
Equivalent Series Resistance
(ESR)
Insulation resistance
Aging
Reliability
Capacitor height
(*) Other values on request.
(**) e.g. 100nF/0404/BV 11V
Value
1 nF to 100 nF(*)
± 15 %(*)
-55 °C to 150 °C
- 70 °C to 165 °C
<±0.5 %, from -55 °C to +150 °C
11 V, 30 V(*)
0.1 %/V (from 0 V to RVDC)
Max 50 pH(**) @ SRF
Max 700 m (**)
100 G min @ RVDC, +25°C
Negligible, < 0.001 %/1000 h
FIT<0.017 parts/billion hours
Max 100 µm
Ultra large-band Wire bondable vertical Silicon Capacitors > 26 GHz (UWSC)
IPDiA 3D Silicon Capacitors
UWSC Capacitors target optical communication systems (ROSA/TOSA, SONET and all optoelectronics) as well as high speed data
systems or products. The UWSC are optimized for DC decoupling and bypass applications. They offer high rejection at > 26 GHz. The
UWSC capacitors also provide very high capacitance stability over temperature (±0.5 %) and voltage. These capacitors are compatible
with standard wire bonding assembly (ball and wedge). The bottom electrode is in Ti/Ni/Au and the top electrode is in Ti/Cu/Ni/Au.
Key Features
Finishing and Packaging






Ultra large band performance higher than 26 GHz
Resonance free and phase stability
Unique capacitance value of 1 nF in 0101
High stability of capacitance value over temperature, voltage and aging
Ultra low ESR and ESL and high reliability
Parameters
Capacitance range
Capacitance tolerance
Operating temperature range
Storage temperature
Temperature coefficient
Breakdown voltage (BV)
Capacitance variation
versus RVDC

Can be directly mounted on the PCB using die bonding and wire
bonding(s). Bottom electrode in Ti/Ni/Au and top electrode in Ti/Cu/
Ni/Au. Other top finishings available on request (ex: 3 µm Al/Si/Cu).
Compatible with standard wire bonding assembly (ball and wedge).
Tape and reel, waffle pack, film frame carrier or raw wafer delivery.
Value
10 pF to 100 nF(*)
± 15 %(*)
-55 °C to 150 °C
- 70 °C to 165 °C
<±0.5 %, from -55 °C to +150 °C
11 V, 30 V, 50 V, 150 V, 450 (**)
0.02 %/V (from 0 V to RVDC)
Parameters
Value
Equivalent Series Inductance(ESL)
typ 6 pH (**) @ SRF
Equivalent Series Resistance(ESR)
typ. 14 m(**)
Insulation resistance
Aging
Reliability
Capacitor height
100 G min @ RVDC, +25°C
Negligible, < 0.001 %/1000 h
FIT<0.017 parts/billion hours
Max 250 µm or 100 µm
(*) Other values on request
the Best Choice for all Demanding Applications
IPDiA high-density silicon capacitors have been developed with a semiconductor MOS process and are using the third
dimension to substantially increase the capacitor surface and thus its capacitance without increasing the capacitor footprint.
IPDiA technology is based on a monolithic structure embedded in a monocristalline substrate (mono MIM and multi MIM).
Higher reliability in a smaller package
This advanced 3D topology gives a
developed area equivalent to 80 ceramic
layers in an amazing 80 μm thickness of
active capacitance area. Thanks to a very
linear and low dispersive dielectric,
miniaturization, capacitance value and
electrical performances are optimized.
(**) e.g. 10nF/0303/BV 50V
Available parts. For other values, contact your IPDiA
sales representative
A reliability 10 times better than MLCCs
Coming from the same DNA as the semiconductor MOS process, IPDiA capacitors have a default mode fully modelized
with proven consistent data and offer therefore predictable and exceptional reliable performances. Our SiCap technology
features high reliability - up to 10 times better than alternative capacitor technologies – mainly obtained thanks to the
highly pure oxide generated during the high temperature curing. Furthermore, all electrical tests are completed at the end of
the production steps which avoids any early failure.
Available parts. For other values, contact your IPDiA sales representative.
High Temperature Automotive Silicon Capacitors up to 200°C (ATSC)
The ATSC capacitors target Under-the-Hood electronics and all sensors exposed to harsh conditions in the automotive market segment.
These automotive grade capacitors are optimized for decoupling functions. They are manufactured in IPDiA ISO-TS 16949 certified
facility, under AEC-Q100 conditions up to 200ºC.
Key Features
Finishing and Packaging








Qualified according to AEC-Q100
Ultra long life @ 200°C
High stability of capacitance value over temperature, voltage and
aging
16 V operating voltage
Load dump
8 kV HBM ESD
Suitable for high temperature leadframe mounting
Parameters
Capacitance range
Capacitance tolerance
1 nF to 100 nF(*)
Operating temperature range
-55 to 200 °C
Storage temperature
Temperature coefficient
Breakdown Voltage (BV)
Capacitance variation versus
RVDC
- 70 to 215 °C

Pad finishing in Aluminum (3 µm thickness +/-10%).
Applicable for high temperature wirebonding and other mountings
Tape and reel, waffle pack or wafer delivery.
Capacitance variation vs temperature
(for SiCap and MLCC technologies)
Parameters
Value
Value
Equivalent Series Inductance (ESL)
Typ 500 pH
Equivalent Series Resistance (ESR)
Typ 0.1 
Insulation resistance
50 G min @ RVDC, +25°C
20 G min @ RVDC, +200°C
30 V
Aging
Negligible, < 0.001 %/10 000 h
0.1 %/V (from 0 V to RVDC)
Reliability
Capacitor height
FIT<0.017 parts/billion hours
±15 %
±1 %, from -55 to +200°C
250 µm typ(*)
(*) Other values on request
Available parts. For other values, contact your IPDiA sales representative
Capacitance variation vs DC biasing voltage
(for SiCap and MLCC technologies)
3D Silicon Capacitors







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

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Date of release:01/03/2016
Rev 2.0
Document ID: Product Line Leaflet
HSSC - High Stability and reliability Capacitors
LPSC - Low Profile Capacitors 80 µm thick
HTSC - High Temperature Capacitors up to 200°C
XTSC - Xtreme Temperature Capacitors up to 250°C
WBSC / WTSC / WXSC - Wire Bondable vertical Capacitors
WLSC - Wire bondable vertical Low profile Capacitors
EMSC - Wire bondable and EMbedded low profile Capacitors
ETSC / EXSC - High / Extreme Temperature wire bondable Capacitors up to 250°C
UBSC / ULSC - Broadband and Ultra Broadband surface mounted Capacitors up to 67 GHz+
UBEC / ULEC - Broadband and Ultra Broadband Embedded Capacitors up to 67 GHz+
UWSC - Ultra large-band Wire bondable vertical Capacitors > 26 GHz
ATSC - High Temperature Automotive Capacitors up to 200°C