DATA SHEET
EYP-DBR-0633-00010-2000-BFW01-000x
72
Revision
24.07.2015
0.72
24.07.2015
page 1 from 5
DISTRIBUTED BRAGG REFLECTOR LASER
GaAs Semiconductor Laser Diode
with integrated grating structure
RWE/RWL BAL BAL
RWE/RWL
DFB/DBR
DFB/DBR
TPL/TPA
TPL/TPA
General Product Information
Product
Application
633 nm DBR Laser with hermetic Butterfly Housing
Replacement of HeNe-Lasers
Monitor Diode, Thermoelectric Cooler and Thermistor
Metrology
Collimated beam
Please note: The use of the laser with
ROHS compliant
3D trackers is protected by patents
Absolute Maximum Ratings
Symbol
Unit
min
Storage Temperature
TS
°C
-40
typ
max
85
Operational Temperature at Case
TC
°C
-20
75
Operational Temperature at Laser Chip
TLD
°C
0
Forward Current
IF
mA
Stress in excess of the Absolute Maximum Ratings
can cause permanent damage to the device.
25
200
Reverse Voltage
VR
V
2
Output Power
Popt
mW
12
TEC Current
ITEC
A
1.1
TEC Voltage
VTEC
V
2.8
Recommended Operational Conditions
Symbol
Unit
min
Operational Temperature at Case
TC
°C
0
Operational Temperature at Laser Chip
TLD
°C
10
Forward Current
IF
mA
Popt
mW
Output Power
typ
max
Measurement Conditions / Comments
50
15
140
2
measured by integrated Thermistor
180
10
Characteristics at TLD = 15°C, Popt = 10 mW
Parameter
Symbol
Unit
min
typ
max
632.0
633.0
634.0
Center Wavelength
lC
nm
Spectral Width (FWHM)
Dn
MHz
1
dl / dT
nm / K
0.045
dl / dI
nm / mA
0.001
Temperature Coefficient of Wavelength
Current Coefficient of Wavelength
Measurement Conditions / Comments
© All rights reserved by eagleyard Photonics GmbH. This target specification will be electronically administered and is subject to change without notice. Uncontrolled copy when printed.
eagleyard Photonics GmbH
Rudower Chaussee 29
12489 Berlin GERMANY
fon +49. 30. 6392 4520
fax +49. 30. 6392 4529
info@eagleyard.com
www.eagleyard.com
DATA SHEET
EYP-DBR-0633-00010-2000-BFW01-000x
Revision 0.72
24.07.2015
page 2 from 5
DISTRIBUTED BRAGG REFLECTOR LASER
GaAs Semiconductor Laser Diode
with integrated grating structure
RWE/RWL BAL BAL
RWE/RWL
DFB/DBR
DFB/DBR
TPL/TPA
TPL/TPA
Characteristics at TLD = 15°C, Popt = 10 mW
Symbol
Unit
Forward Current @ Popt = 10 mW
IF
mA
Threshold Current
Ith
mA
Slope Efficiency
h
W/A
0.15
SMSR
dB
30
Parameter
Sidemode Supression Ratio
min
typ
max
Measurement Conditions / Comments
180
120
0.4
TLD
°C
Popt
mW
10
lC
nm
632.991
Popt
mW
10
Degree of Polarization
DOP
%
90
E field perpendicular to base plate (see p. 4)
Divergence parallel (full angle, 1/e2)
Q
°
0.1
parallel to base plate (see p. 4)
Divergence perpendicular (full angle, 1/e2)
Q^
°
0.1
d
mm
0.7
Beam Width perpendicular (1/e )
d^
mm
Beam Propagation Factor
M2
4 Variant 0
4 Variant 5
2
Beam Width parallel (1/e )
2
15
1
wavelength reached within TLD = 0 ° and 20° C
perpendicular to base plate (see p. 4)
1.0
at window, parallel to base plate (see p. 4)
0.6
1.0
at window, perpendicular to base plate (see p. 4)
1.2
tbd
Typical Measurement Results
Output Power vs. Current
Spectra at Specified Optical Output Power
Pictures and the illustrative graphs (on the left hand
side) provided in this specification are typical and
must be specifically confirmed in writing by eagleyard
Photonics before they become applicable to any
particular order or contract.
© All rights reserved by eagleyard Photonics GmbH. This target specification will be electronically administered and is subject to change without notice. Uncontrolled copy when printed.
eagleyard Photonics GmbH
Rudower Chaussee 29
12489 Berlin GERMANY
fon +49. 30. 6392 4520
fax +49. 30. 6392 4529
info@eagleyard.com
www.eagleyard.com
DATA SHEET
EYP-DBR-0633-00010-2000-BFW01-000x
24.07.2015
Revision 0.72
page 3 from 5
DISTRIBUTED BRAGG REFLECTOR LASER
GaAs Semiconductor Laser Diode
with integrated grating structure
RWE/RWL BAL BAL
RWE/RWL
DFB/DBR
DFB/DBR
TPL/TPA
TPL/TPA
Monitor Diode
Symbol
Unit
min
max
Measurement Conditions / Comments
Imon
µA
10
2000
UR = 5 V
UR MD
V
3
5
Symbol
Unit
min
Current
ITEC
Voltage
UTEC
Power Dissipation (total loss at case)
Temperature Difference
Parameter
Monitor Detector Current
Reverse Voltage Monitor Diode
typ
Thermoelectric Cooler
Parameter
typ
max
Measurement Conditions / Comments
A
0.7
1.1
Popt = 10 mW,
DT = 40 K
V
1.7
2.8
Popt = 10 mW,
DT = 40 K
Ploss
W
0.4
0.5
Popt = 10 mW,
DT = 40 K
DT
K
60
Popt = 10 mW, DT = I Tcase - TLD I
Thermistor (Standard NTC Type)
Parameter
Symbol
Unit
Resistance
R
kW
Beta Coefficient
b
min
typ
max
Measurement Conditions / Comments
10
3892
T = 0° … 50° C
© All rights reserved by eagleyard Photonics GmbH. This target specification will be electronically administered and is subject to change without notice. Uncontrolled copy when printed.
eagleyard Photonics GmbH
Rudower Chaussee 29
12489 Berlin GERMANY
fon +49. 30. 6392 4520
fax +49. 30. 6392 4529
info@eagleyard.com
www.eagleyard.com
DATA SHEET
EYP-DBR-0633-00010-2000-BFW01-000x
Revision 0.72
24.07.2015
page 4 from 5
DISTRIBUTED BRAGG REFLECTOR LASER
GaAs Semiconductor Laser Diode
with integrated grating structure
RWE/RWL BAL BAL
RWE/RWL
DFB/DBR
DFB/DBR
TPL/TPA
TPL/TPA
Package Dimensions
Parameter
Emission Plane
Symbol
Unit
hEP
mm
min
typ
max
Measurement Conditions / Comments
4.9
Package Pinout
1
Thermoelectric Cooler (+)
14
Thermoelectric Cooler (-)
2
Thermistor
13
Case
3
Photodiode (Anode)
12
not connected
4
Photodiode (Cathode)
11
Laser Diode (Cathode)
5
Thermistor
10
6
not connected
9
not connected
7
not connected
8
not connected
top view
Laser Diode (Anode)
Package Drawings
Polarization:
E field perpendicular to base plate
Z13-0000-BFY32-DBR-0000
© All rights reserved by eagleyard Photonics GmbH. This target specification will be electronically administered and is subject to change without notice. Uncontrolled copy when printed.
eagleyard Photonics GmbH
Rudower Chaussee 29
12489 Berlin GERMANY
fon +49. 30. 6392 4520
fax +49. 30. 6392 4529
info@eagleyard.com
www.eagleyard.com
DATA SHEET
EYP-DBR-0633-00010-2000-BFW01-000x
Revision 0.72
24.07.2015
page 5 from 5
DISTRIBUTED FEEDBACK LASER
GaAs Semiconductor Laser Diode
with integrated grating structure
RWE/RWL BAL BAL
RWE/RWL
DFB/DBR
DFB/DBR
TPL/TPA
TPL/TPA
Order Code Scheme
EYP-DBR-0633-00010-2000-BFW01- 0 0 0 x
Mode-hop free Operating Range (Minimum Side Mode Suppression Ratio > 30 dB)
Popt = 10 mW;
TLD = 15 ° C
(Variant 0)
0
Popt = 10 mW;
lc = 632.991 nm
(Variant 5)
5
Unpacking, Installation and Laser Safety
Unpacking the laser diodes should only be done at electrostatic safe workstations (EPA). Though protection
against electro static discharge (ESD) is implemented in the laser package, charges may occur at surfaces.
Please store this product in its original package at a dry, clean place until final use. During device
installation, ESD protection has to be maintained.
Laser Emission
Operating at moderate temperatures on proper heat sinks willl contribute to a long lifetime of the diode.
DANGER. LASER RADIATION
AVOID EYE OR SKIN EXPOSURE TO
DIRECT OR SCATTERED RADIATION
CLASS 4 LASER PRODUCT
WAVELENGTH
MAX. LASER POWER
633 nm
12 mW
IEC 60825-1
The laser emission from this diode is close to the invisible infrared region of the electromagnetic spectrum.
Avoid direct and/or indirect exposure to the free running beam. Collimating the free running beam with
optics as common in optical instruments will increase threat to the human eye.
Each laser diode will come with an individual test protocol verifying the parameters given in this document.
12 mW MAX OUTPUT AT 633.0 nm
© All rights reserved by eagleyard Photonics GmbH. This target specification will be electronically administered and is subject to change without notice. Uncontrolled copy when printed.
eagleyard Photonics GmbH
Rudower Chaussee 29
12489 Berlin GERMANY
fon +49. 30. 6392 4520
fax +49. 30. 6392 4529
info@eagleyard.com
www.eagleyard.com