A Product Line of
Diodes Incorporated
ZXMS6005SG
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE
INTELLIFET™ MOSFET
SUMMARY
Continuous drain source voltage 60 V
On-state resistance
200 mΩ
Nominal load current (VIN = 5V)
2A
Clamping Energy
480 mJ
SOT223 Package
DESCRIPTION
The ZXMS6005SG is a self protected low side MOSFET with logic
level input. It integrates over-temperature, over-current, over-voltage
(active clamp) and ESD protected logic level functionality. The
ZXMS6005SG is ideal as a general purpose switch driven from 3.3V
or 5V microcontrollers in harsh environments where standard
MOSFETs are not rugged enough.
S
S
D
IN
FEATURES
•
•
•
•
•
•
•
•
•
Compact high power dissipation package
Low input current
Logic Level Input (3.3V and 5V)
Short circuit protection with auto restart
Over voltage protection (active clamp)
Thermal shutdown with auto restart
Over-current protection
Input Protection (ESD)
High continuous current rating
ORDERING INFORMATION
DEVICE
PART
MARK
REEL SIZE
(inches)
TAPE WIDTH
(mm)
QUANTITY PER
REEL
ZXMS6005SGTA
ZXMS
6005S
7
12 embossed
1,000 units
ZXMS6005SG
Document Number DS32249 Rev. 1 - 2
1 of 9
www.diodes.com
June 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
FUNCTIONAL BLOCK DIAGRAM
D
Over Voltage
Protection
dV/dt
limitation
IN
Human
body ESD
protection
Over temperature
protection
Logic
Over current
protection
S
APPLICATIONS AND INFORMATION
•
Especially suited for loads with a high in-rush current such as lamps and motors.
•
All types of resistive, inductive and capacitive loads in switching applications.
•
μC compatible power switch for 12V DC applications.
•
Automotive rated.
•
Replaces electromechanical relays and discrete circuits.
•
Linear Mode capability - the current-limiting protection circuitry is designed to de-activate
at low VDS to minimise on state power dissipation. The maximum DC operating current is
therefore determined by the thermal capability of the package/board combination, rather
than by the protection circuitry. This does not compromise the product’s ability to selfprotect at low VDS.
ZXMS6005SG
Document Number DS32249 Rev. 1 - 2
2 of 9
www.diodes.com
June 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
LIMIT
UNIT
Continuous Drain-Source Voltage
VDS
60
V
Drain-Source Voltage for short circuit protection
VDS(SC)
24
V
Continuous Input Voltage
VIN
-0.5 ... +6
V
Continuous Input Current
IIN
mA
-0.2V≤VIN≤6V
No limit
VIN<-0.2V or VIN>6V
│IIN │≤2
Operating Temperature Range
Tj,
-40 to +150
°C
Storage Temperature Range
Tstg
-55 to +150
°C
Power Dissipation at TA =25°C (a)
PD
1.0
W
8.0
mW/°C
1.6
W
12.8
mW/°C
Linear Derating Factor
PD
Power Dissipation at TA =25°C (b)
Linear Derating Factor
Pulsed Drain Current @ VIN=3.3V
IDM
5
A
Pulsed Drain Current @ VIN=5V
IDM
6
A
Continuous Source Current (Body Diode) (a)
IS
2.5
A
Pulsed Source Current (Body Diode)
ISM
10
A
Unclamped single pulse inductive energy, Tj=25°C,
ID=0.5A, VDD=24V
EAS
480
mJ
Electrostatic Discharge (Human Body Model)
VESD
4000
V
Charged Device Model
VCDM
1000
V
THERMAL RESISTANCE
PARAMETER
SYMBOL
VALUE
UNIT
Junction to Ambient (a)
RθJA
125
°C/W
Junction to Ambient (b)
RθJA
83
°C/W
Junction to Case (c)
RθJC
39
°C/W
NOTES
(a) For a device surface mounted on 15mm x 15mm single sided 1oz weight copper on 1.6mm FR4 board, in
still air conditions. Sink split drain 80% and source 20% to isolate connections.
(b) For a device surface mounted on 50mm x 50mm single sided 2oz weight copper on 1.6mm FR4 board, in
still air conditions. Sink split drain 80% and source 20% to isolate connections.
(c) Thermal resistance between junction and the mounting surfaces of drain and source pins.
ZXMS6005SG
Document Number DS32249 Rev. 1 - 2
3 of 9
www.diodes.com
June 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
RECOMMENDED OPERATING CONDITIONS
The ZXMS6005SG is optimised for use with µC operating from 3.3V and 5V supplies.
Symbol
VIN
TA
VIH
VIL
VP
Description
Input voltage range
Ambient temperature range
High level input voltage for MOSFET to be on
Low level input voltage for MOSFET to be off
Peripheral supply voltage (voltage to which load is referred)
Min
0
-40
3
0
0
Max
5.5
125
5.5
0.7
24
Units
V
°C
V
V
V
ID Drain Current (A)
10
Max Power Dissipation (W)
CHARACTERISTICS
Limited by Over-Current Protection
Limited
by RDS(on)
1ms
1
DC
1s
100ms
100m
10m
10ms
Single Pulse
T amb=25°C
Limit of s/c protection
See Note (a)
1
10
1.6
1.4
See Note (b)
1.2
1.0
0.8
0.6
0.4
See Note (a)
0.2
0.0
0
25
VDS Drain-Source Voltage (V)
100
Tamb=25°C
See Note (a)
80
D=0.5
60
40
Single Pulse
D=0.2
D=0.05
20
D=0.1
0
100µ
1m
10m 100m
1
10
125
150
100
1k
Single Pulse
T amb=25°C
See Note (a)
10
1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Transient Thermal Impedance
Document Number DS32249 Rev. 1 - 2
100
100
Pulse Width (s)
ZXMS6005SG
75
Derating Curve
Maximum Power (W)
Thermal Resistance (°C/W)
Safe Operating Area
120
50
Temperature (°C)
4 of 9
www.diodes.com
Pulse Power Dissipation
June 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
CONDITIONS
Drain-Source Clamp Voltage
VDS(AZ)
60
65
70
V
ID=10mA
Off state Drain Current
IDSS
1
µA
VDS=12V, VIN=0V
Off state Drain Current
IDSS
2
uA
VDS=36V, VIN=0V
Input Threshold Voltage
VIN(th)
1
1.5
V
VDS=VGS, ID=1mA
Input Current
IIN
60
100
μA
VIN=+3V
Input Current
IIN
120
200
μA
VIN=+5V
300
μA
VIN=+5V
Static Characteristics
0.7
Input Current while over
temperature active
Static Drain-Source On-State
Resistance
RDS(on)
170
250
mΩ
VIN=+3V, ID=1A
Static Drain-Source On-State
Resistance
RDS(on)
150
200
mΩ
VIN=+5V, ID=1A
Continuous Drain Current (a)
ID
1.4
A
VIN=3V; TA=25°C
Continuous Drain Current (a)
ID
1.6
A
VIN=5V; TA=25°C
Continuous Drain Current (b)
ID
1.9
A
VIN=3V; TA=25°C
Continuous Drain Current (b)
ID
2.0
A
VIN=5V; TA=25°C
Current Limit (d)
ID(LIM)
2.2
5
A
VIN=+3V,
Current Limit (d)
ID(LIM)
3.3
7
A
VIN=+5V
VDD=12V, ID=1A,
VGS=5V
Dynamic Characteristics
Turn On Delay Time
td(on)
6
μs
Rise time
tr
14
μs
Turn Off Delay Time
td(off)
34
μs
Fall Time
ff
19
μs
Notes:
(d) The drain current is restricted only when the device is in saturation (see graph ‘typical output
characteristic’). This allows the device to be used in the fully on state without interference from the
current limit. The device is fully protected at all drain currents, as the low power dissipation
generated outside saturation makes current limit unnecessary.
ZXMS6005SG
Document Number DS32249 Rev. 1 - 2
5 of 9
www.diodes.com
June 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
TJT
150
175
°C
10
°C
CONDITIONS
Over-temperature Protection
Thermal Overload Trip
Temperature (e)
Thermal hysteresis (e)
Note:
(e) Over-temperature protection is designed to prevent device destruction under fault conditions.
Fault conditions are considered as “outside” normal operating range, so this part is not designed
to withstand over-temperature for extended periods..
ZXMS6005SG
Document Number DS32249 Rev. 1 - 2
6 of 9
www.diodes.com
June 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
TYPICAL CHARACTERISTICS
4.5V
5V
8
7
4V
6
3.5V
3V
5
2.5V
4
3
2V
2
VIN
1
0
120
TA = 25°C
IIN Input Current (μA)
ID Drain Current (A)
9
1.5V
0
1
2
3
4
5
6
7
8
100
80
60
40
20
0
9 10 11 12
0
1
4
5
1.4
ID = 1A
0.4
TJ = 150°C
0.2
TJ = 25°C
0.0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VTH Threshold Voltage (V)
RDS(on) On-Resistance (Ω)
3
Input Current vs Input Voltage
Typical Output Characteristic
VIN = VDS
1.3
ID = 1mA
1.2
1.1
1.0
0.9
0.8
-75 -50 -25
0
25
50
75 100 125 150
TJ Junction Temperature (°C)
VIN Input Voltage (V)
On-Resistance vs Input Voltage
Threshold Voltage vs Temperature
0.40
10
0.35
0.30
VIN = 3V
0.25
0.20
0.15
VIN = 5V
0.10
0.05
0.00
-75 -50 -25
0
25
50
75 100 125 150
IS Source Curent (A)
RDS(on) On-Resistance (Ω)
2
VIN Input Voltage (V)
VDS Drain-Source Voltage (V)
TJ=150°C
1
T J=25°C
0.1
0.01
0.4
ZXMS6005SG
Document Number DS32249 Rev. 1 - 2
0.8
1.0
1.2
VSD Source-Drain Voltage (V)
TJ Junction Temperature (°C)
On-Resistance vs Temperature
0.6
Reverse Diode Characteristic
7 of 9
www.diodes.com
June 2010
© Diodes Incorporated
Drain-Source Voltage (V)
Drain-Source Voltage (V)
A Product Line of
Diodes Incorporated
12
ID=1A
10
VDS
8
6
VIN
4
2
0
-50
0
50
100
150
200
250
300
12
8
6
4
VIN
2
0
-50
0
50
100
150
200
250
300
Time (μs)
Time (μs)
Switching Speed
Switching Speed
ID Drain Current (A)
ID=1A
VDS
10
VIN = 5V
8
VDS = 15V
RD = 0Ω
6
4
2
0
-2
0
2
4
6
8
10
12
Time (ms)
Typical Short Circuit Protection
ZXMS6005SG
Document Number DS32249 Rev. 1 - 2
8 of 9
www.diodes.com
June 2010
© Diodes Incorporated
A Product Line of
Diodes Incorporated
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDING TO THIS
DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS
FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or
other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume
any liability arising out of the application or use of this document or any product described herein; neither does Diodes
Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this
document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes
Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all
damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through
unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers
shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or
unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product
names and markings noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems
without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use
provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably
expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support
devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related
requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices
or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes
Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages
arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2010, Diodes Incorporated
www.diodes.com
ZXMS6005SG
Document Number DS32249 Rev. 1 - 2
9 of 9
www.diodes.com
June 2010
© Diodes Incorporated