AON7410
30V N-Channel MOSFET
General Description
Features
The AON7410 uses advanced trench technology and design
to provide excellent RDS(ON) with low gate charge. This
device is suitable for use in DC - DC converters and Load
Switch applications.
VDS (V) = 30V
ID = 24A
RDS(ON) < 20mΩ
RDS(ON) < 26mΩ
RoHS and Halogen-Free Compliant
100% UIS Tested
100% Rg Tested
Top View
DFN 3x3 EP
Bottom View
(VGS = 10V)
(VGS = 10V)
(VGS = 4.5V)
D
Top View
1
8
2
7
3
6
4
5
G
Pin 1
S
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AON7410
DFN 3x3 EP
Tape & Reel
5000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Symbol
VDS
Maximum
30
Units
V
Gate-Source Voltage
VGS
±20
V
ID
15
TC=25°C
Continuous Drain
Current B
TC=100°C
Pulsed Drain Current C
24
IDM
Continuous Drain
A
Current
TA=70°C
A
50
TA=25°C
9.5
IDSM
7.7
Avalanche Current C
IAS, IAR
17
A
Repetitive avalanche energy L=0.1mH C
EAS, EAR
14
mJ
TC=25°C
Power Dissipation
B
TC=100°C
TA=25°C
Power Dissipation A
TA=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Case
Rev.12.0: August 2014
B
20
PD
8.3
PDSM
2
TJ, TSTG
-55 to 150
Symbol
t ≤ 10s
Steady-State
Steady-State
W
3.1
RθJA
RθJC
www.aosmd.com
Typ
30
60
5
°C
Max
40
75
6
Units
°C/W
°C/W
°C/W
Page 1 of 6
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.4
ID(ON)
On state drain current
VGS=10V, VDS=5V
50
RDS(ON)
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS
Maximum Body-Diode Continuous Current
TJ=55°C
5
±100
VGS=10V, ID=8A
Reverse Transfer Capacitance
Rg
Gate resistance
20
VGS=4.5V, ID=7A
21
26
VDS=5V, ID=8A
30
IS=1A,VGS=0V
0.75
VGS=0V, VDS=15V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
VGS=10V, VDS=15V, ID=8A
nA
V
mΩ
S
1
V
20
A
440
550
660
pF
77
110
143
pF
33
55
77
pF
3
4
4.9
Ω
7.8
9.8
12
nC
3.6
4.6
5.5
nC
1.4
1.8
2.2
nC
1.3
2.2
3
nC
5
VGS=10V, VDS=15V, RL=2Ω,
RGEN=3Ω
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
IF=8A, dI/dt=500A/µs
7
9
11
Qrr
Body Diode Reverse Recovery Charge IF=8A, dI/dt=500A/µs
12
15
18
Body Diode Reverse Recovery Time
µA
A
29
SWITCHING PARAMETERS
Qg (10V) Total Gate Charge
Qg (4.5V) Total Gate Charge
2.5
16
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Crss
1.8
24
TJ=125°C
Units
V
1
Zero Gate Voltage Drain Current
Output Capacitance
Max
30
VDS=30V, VGS=0V
IDSS
Coss
Typ
3.2
ns
24
ns
6
ns
ns
nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on RθJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
150
E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev12: Jul-2011
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.12.0: August 2014
www.aosmd.com
Page 2 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
50
10V
VDS= 5V
4.5V
4V
40
40
30
ID(A)
ID (A)
30
3.5V
20
20
125°C
10
10
VGS= 3V
25°C
0
0
0
1
2
3
4
5
1
26
4
5
Normalized On-Resistance
1.8
24
RDS(ON) (mΩ)
3
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Figure 1: On-Region Characteristics
VGS= 4.5V
22
20
18
VGS= 10V
16
14
0
5
10
15
VGS= 10V
ID= 8A
1.6
1.4
VGS= 4.5V
ID= 7A
1.2
1.0
0.8
IF=-6.5A,
dI/dt=100A/µs
20
25
30 µ
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
1E+02
50
ID= 8A
45
1E+01
40
1E+00
35
1E-01
30
IS (A)
RDS(ON) (mΩ)
2
125°C
25
1E-02
125°C
1E-03
20
25°C
1E-04
15
25°C
1E-05
10
2
4
6
8
10
1E-06
0.0
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Rev.12.0: August 2014
www.aosmd.com
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
Page 3 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
800
10
VDS= 15V
ID= 8A
Capacitance (pF)
VGS (Volts)
8
6
4
Ciss
600
400
200
Coss
2
Crss
0
0
0
2
4
6
8
0
10
5
10
15
25
30
VDS (Volts)
Figure 8: Capacitance Characteristics
Qg (nC)
Figure 7: Gate-Charge Characteristics
300
100
TJ(Max)=150°C
TC=25°C
10µs
10
100µs
Power (W)
ID (Amps)
20
1ms
DC
1
RDS(ON)
limited
200
100
0.1
TJ(Max)=150°C
TA=25°C
0
0.00001 0.0001 0.001
0.01
0.1
1
10
100
VDS (Volts)
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junctionto-Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note H)
ZθJC Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
RθJC=6°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
0.001
0.00001
Single Pulse
0.0001
0.001
0.01
Ton
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note F)
Rev.12.0: August 2014
www.aosmd.com
Page 4 of 6
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
20
Current rating ID(A)
Power Dissipation (W)
25
15
10
5
0
20
10
0
0
25
50
75
100
125
150
0
TCASE (°C)
Figure 12: Power De-rating (Note F)
25
50
75
100
125
150
TCASE (°C)
Figure 13: Current De-rating (Note F)
1000
TA=25°C
Power (W)
100
10
1
0.0001 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-toAmbient (Note H)
ZθJA Normalized Transient
Thermal Resistance
10
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
D=Ton/T
RθJA=75°C/W
TJ,PK=TA+PDM.ZθJA.RθJA
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=75°C/W
0.1
0.01
Single Pulse
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance(Note H)
Rev.12.0: August 2014
www.aosmd.com
Page 5 of 6
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
Vgs
90%
+ Vdd
DUT
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev.12.0: August 2014
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
www.aosmd.com
Page 6 of 6