AO4407A
30V P-Channel MOSFET
General Description
Product Summary
The AO4407A uses advanced trench technology to
provide excellent RDS(ON), and ultra-low low gate charge
with a 25V gate rating. This device is suitable for use as
a load switch or in PWM applications.
VDS = -30V
ID = -12A
(VGS = -20V)
RDS(ON) < 11mΩ (VGS = -20V)
RDS(ON) < 13mΩ (VGS = -10V)
RDS(ON) < 17mΩ (VGS = -6V)
* RoHS and Halogen-Free Complaint
100% UIS Tested
100% Rg Tested
SOIC-8
Top View
D
D
D
Bottom View
D
D
G
G
S
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain
Current A
VGS
TA=25°C
Pulsed Drain Current B
Avalanche Current G
Repetitive avalanche energy L=0.3mH
TA=25°C
Power Dissipation A
TA=70°C
G
Junction and Storage Temperature Range
Maximum Junction-to-Lead C
Rev.11.0 June 2013
Units
V
±25
V
-12
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
-30
Maximum
ID
-10
IDM
-60
IAR
-26
EAR
101
mJ
3.1
PD
W
2.0
TJ, TSTG
Symbol
t ≤ 10s
Steady State
Steady State
A
RθJA
RθJL
-55 to 150
Typ
32
60
17
Max
40
75
24
°C
Units
°C/W
°C/W
°C/W
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Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID = -250µA, VGS = 0V
-30
IGSS
Gate-Body leakage current
VDS = 0V, VGS = ±25V
VGS(th)
Gate Threshold Voltage
VDS = VGS ID = -250µA
-1.7
ID(ON)
On state drain current
VGS = -10V, VDS = -5V
-60
TJ = 55°C
VGS = -20V, ID = -12A
TJ=125°C
21
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Gate Source Charge
Qgd
tD(on)
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
-0.7
2060
VGS=0V, VDS=-15V, f=1MHz
mΩ
S
-1
V
-3
A
2600
pF
370
pF
295
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
Qg
Qgs
11
17
Maximum Body-Diode Continuous Current
Reverse Transfer Capacitance
8.5
12.7
IS
Gate resistance
A
VGS = -6V, ID = -10A
IS = -1A,VGS = 0V
Rg
V
13
Diode Forward Voltage
Crss
nA
-3
15
VSD
Output Capacitance
±100
10
VDS = -5V, ID = -10A
Coss
-2.3
11.5
Forward Transconductance
µA
-5
VGS = -10V, ID = -12A
gFS
Units
-1
Zero Gate Voltage Drain Current
Static Drain-Source On-Resistance
Max
V
VDS = -30V, VGS = 0V
IDSS
RDS(ON)
Typ
VGS=-10V, VDS=-15V, ID=-12A
pF
2.4
3.6
Ω
30
39
nC
4.6
nC
Gate Drain Charge
10
nC
Turn-On DelayTime
11
ns
9.4
ns
24
ns
12
ns
VGS=-10V, VDS=-15V, RL=1.25Ω,
RGEN=3Ω
trr
Body Diode Reverse Recovery Time
IF=-12A, dI/dt=100A/µs
30
Qrr
Body Diode Reverse Recovery Charge IF=-12A, dI/dt=100A/µs
22
40
ns
nC
A: The value of R θJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A = 25°C. The
value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using < 300µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s thermal resistance rating.
G. EAR and IAR ratings are based on low frequency and duty cycles to keep Tj=25C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.11.0 June 2013
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
80
80
-10V
VDS= -5V
-6V
60
-5V
-ID(A)
-ID (A)
60
-4.5V
40
40
125°C
-4V
20
20
25°C
VGS= -3.5V
0
0
0
1
2
3
4
5
0
0.5
-VDS (Volts)
Figure 1: On-Region Characteristics
1.5
2
2.5
3
3.5
4
4.5
5
-VGS(Volts)
Figure 2: Transfer Characteristics
20
Normalized On
On-Resistance
1.8
15
RDS(ON) (mΩ
Ω)
1
VGS=-6V
10
VGS=-10V
VGS=-20V
5
0
0
4
1.6
1.4
VGS=-10V
ID=-12A
1.2
VGS=-6V
ID=-10A
1.0
0.8
dI/dt=100A/µs
I12
20
F=-6.5A, 16
8
VGS=-20V
ID=-12A
0
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
30
1E+01
ID=-12A
1E+00
25
20
-IS (A)
RDS(ON) (mΩ
Ω)
1E-01
125°
15
125°C
1E-02
1E-03
25°C
1E-04
10
25°
1E-05
5
3
4
5
6
7
8
9
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Rev.11.0 June 2013
1E-06
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
3000
10
Ciss
Capacitance (pF)
-VGS (Volts)
2500
VDS=-15V
ID=-12A
8
6
4
2
2000
1500
1000
Coss
500
Crss
0
0
0
5
10
15
20
25
30
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
5
10
15
25
30
-VDS (Volts)
Figure 8: Capacitance Characteristics
10000
100
10µs
10
1ms
1
10ms
RDS(ON) limited
100mss
0.1
TJ(Max)=150°C
TA=25°C
100
10
10s
DC
0.01
0.1
TJ(Max)=150°C
TA=25°C
1000
100µs
Power (W)
-ID (Amps)
20
1
10
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
100
1
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E)
Zθ JA Normalized Transient
Thermal Resistance
10
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=75°C/W
0.1
PD
0.01
Ton
Single Pulse
0.001
0.00001
0.0001
Rev.11.0 June 2013
0.001
T
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)
100
1000
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G ate C harge Test C ircuit & W aveform
Vgs
Qg
-10V
-
-
VD C
+
VD C
Q gs
Vds
Qgd
+
DUT
V gs
Ig
C harge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
Vgs
-
DUT
Vgs
VDC
td(on)
t d(off)
tr
tf
90%
Vdd
+
Rg
Vgs
10%
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
2
L
EAR= 1/2 LIAR
Vds
Vds
Id
-
Vgs
Vgs
VDC
+
Rg
BVDSS
Vdd
Id
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
Rev.11.0 June 2013
L
-Isd
+ Vdd
t rr
dI/dt
-I RM
Vdd
VDC
-
-I F
-Vds
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