User's Guide
SNVA484A – October 2011 – Revised May 2013
AN-2149 LM5113 Evaluation Board
1
Introduction
The LM5113 evaluation board is designed to provide the design engineers with a synchronous buck
converter to evaluate the LM5113, a 100V half-bridge enhancement mode Gallium Nitride (GaN) FET
driver. The active clamping voltage mode controller LM5025 is used to generate the PWM signals of the
buck switch and the synchronous switch. The specifications of the evaluation board are as follows:
• Input Operating Voltage: 15V to 60V
• Output Voltage: 10V
• Output Current: 10A @ 48V, 7A @ 60V
• Measured Efficiency at 48V: 93.9% @ 10A
• Frequency of Operation: 800kHz
• Line UVLO: 13.8V (Rising) /10.8V (Falling)
• Board size: 3.00 x 2.83 inches
The printed circuit board (PCB) consists of 2 layers of 2 ounce copper on FR4 material, with a thickness of
0.050 inches.
This document contains the schematic of the evaluation board, Bill of Materials (BOM) and a quick setup
procedure. The evaluation board can be reconfigured for different switching frequency, dead time, and the
output voltage from the specifications above. An example of 48V to 3.3V conversion is given in
Appendix A. For more complete information, see the LM5113 5A, 100V Half-Bridge Gate Driver for
Enhancement Mode GaN FETs Data Sheet (SNVS725)
2
IC Features
•
•
•
•
•
•
•
•
•
•
3
Independent high-side and low-side TTL logic inputs
1.2A/5A peak source/sink current
High-side floating bias voltage rail operates up to 100VDC
Internal bootstrap supply voltage clamping
Split outputs for adjustable turn-on/turn-off strength
0.6Ω/2.1Ω pull-down/pull-up resistance
Fast propagation times (28 ns typical)
Excellent propagation delay matching (1.5 ns typical)
Supply rail under-voltage lockout
Low power consumption
Powering and Loading Considerations
Certain precautions need to be followed when applying power to the LM5113 evaluation board. A
misconnection can damage the assembly.
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1
Powering and Loading Considerations
3.1
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Proper Board Connection
Figure 2 depicts the typical evaluation setup. The source power is connected to the J1 (VIN) and the J3
(GND). The load is connected to the J2 (VOUT) and the J4 (GND). Be sure to choose the correct
connector and wire size. The input and output voltage must be monitored directly at the terminals of the
board. The voltage drop across the connection wires will cause inaccurate measurements.
HB
UVLO
& CLAMP
HOH
LEVEL
SHIFT
HOL
HS
HI
VDD
UVLO
LOH
LOL
LI
VSS
Figure 1. Simplified Block Diagram of LM5113
Current Meter
J1
VIN
J3
GND
+
LM5113 EVAL
J4
GND
DC Power Supply
-
J2
VOUT
Volt-meter
+
Electronic Load
with current meter
-
Figure 2. Typical Evaluation Setup
3.2
Source Power
To fully test the LM5113 evaluation board, a DC power supply capable of 60V and 8A is required. The
power supply and cabling must present low impedance to the evaluation board. Insufficient cabling or a
high impedance power supply will droop during power supply application with the evaluation board inrush
current. If large enough, this droop will cause a chattering condition upon power up. This chattering
condition is an interaction with the evaluation board under voltage lockout, the cabling impedance and the
inrush current.
2
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Powering and Loading Considerations
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3.3
Output Current Derating
The LM5113 evaluation board is designed to operate with a maximum load current of 10A for input
voltages ranging from 15V to 48V. With further increases of the input voltage, the maximum allowable load
current gradually decreases to 7A, to ensure reliable prolonged operation. Figure 3 illustrates the derating
curve of the output current at room temperature with airflow of 200CFM. It may be necessary to further
reduce the maximum load current at higher ambient temperature.
Note that the LM5113 evaluation board does not have over current protection. Certain precautions should
be taken to prevent the load current from exceeding the derating curve shown in Figure 3, otherwise a
catastrophic failure may result.
3.4
Air Flow
Sufficient cooling is required to ensure a proper and reliable operation. Especially at high line input and full
load, most of the power losses are dissipated in the buck switch. Insufficient airflow can cause overheating
of the GaN FETs. A minimum airflow of 200CFM should always be provided.
3.5
Quick Start-Up Procedure
1. Set the current limit of the source supply to provide about 1.5 times the anticipated output power.
Connect the source supply to J1 and J3.
2. Connect the load cable between J2 and J4. Disable the load.
3. Set the input voltage and turn on the power supply without load current. Check that the output voltage
is 10V.
4. Slowly increase the load current while monitoring the output voltage.
When the evaluation board is powered off, wait for 30 seconds before powering on the evaluation board
again to allow the full discharge of the soft start capacitor.
12
LOAD CURRENT (A)
11
@Room temperature
with airflow of 200CFM
10
9
8
7
6
15 20 25 30 35 40 45 50 55 60
VIN (V)
Figure 3. Load Current Derating Curve
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Performance Characteristics
4
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Performance Characteristics
Figure 4 shows the efficiency of the LM5113 evaluation board at different input voltage and the load
current. 30ns dead time between HI and LI input of the LM5113 is selected to eliminate the shoot through
while achieving high efficiency.
100
15V
98
24V
36V
48V
EFFICIENCY (%)
96
94
60V
92
90
88
fSW=800kHz
86
VOUT=10V
84
82
1
2
3 4 5 6 7 8
LOAD CURRENT (A)
9
10
Figure 4. Evaluation Board Efficiency vs. Load Current
During the dead time, the HS pin voltage can be pulled down below -0.7V and results in an excessive
bootstrap voltage. The LM5113 has an internal clamping circuitry that prevents the bootstrap voltage from
exceeding 5.25V typically. Figure 5 shows the average of the bootstrap voltage with the different load
current. As can be seen, the bootstrap voltage is well regulated.
Figure 5. Bootstrap Voltage Regulation vs. Load Current
4
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Performance Characteristics
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Figure 6 compares the input and the output of the low-side driver.
Conditions:
Input Voltage = 48V DC, Load Current = 5A
Traces:
Top Trace: Gate of Low-Side eGaN FET, Volt/div = 2V
Bottom Trace: LI of LM5113, Volt/div = 5V
Bandwidth Limit = 600MHz
Horizontal Resolution = 0.2 µs/div
Figure 6. Low-Side Driver Input and Output
Figure 7 shows the switch node voltage that is also the drain voltage of the low-side FET. The ringing on
the switch node voltage can be reduced by the HOH gate resistor. 2Ω HOH gate resistance is selected to
achieve a drain-source voltage margin of 12V for a 60V input.
Conditions:
Input Voltage = 48V DC
Load Current = 10A
Traces:
Trace: Switch–Node Voltage, Volts/div = 20V
Bandwidth Limit = 600 MHz
Horizontal Resolution = 50 ns/div
Figure 7. Switch-Node Voltage
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Performance Characteristics
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Figure 8 shows the load transient response. The load changes between 2A and 10A. 800 kHz switching
frequency allows the use of a small inductor of 2.7uH, which helps improve the large signal transient
response.
Conditions:
Input Voltage = 48V DC
Output Current = 2A to 10A
Traces:
Top Trace: Load Current, Amp/div = 5A
Bottom Trace: Output Voltage
Volt/div = 100mV, AC coupled
Bandwidth Limit = 20 MHz
Horizontal Resolution = 0.2 ms/div
Figure 8. Load Transient Response
Figure 9 shows the measured overall loop response. The crossover frequency is 46 kHz and the phase
margin is around 55°.
Conditions:
Input Voltage = 48V DC
Output Current = 10A
Figure 9. Loop Gain and Phase
6
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J3
C30
0.01 F
GND
GND
C16
220 pF
R2
100k
±1%
C3
2.2 F
C2
C4
C17
NU
2.2 F
R17
7.50k
GND
C31
0.1 F
R7
33.2k
R3
150k
C7
C32
1 F
C18
0.1 F
R4
±1%
49.9
D1
4
3
3
15
¬ SYNC COMP
14
¬ RT
TIME
6 REF
AGND
7
VCC PGND
11
10
5
13
GND
ON/OFF
GND
GND
GND
4
R15
4.02k
BYP
U1 LP2982AIM5-5.0
5
1
OUT
IN
8
2
¬ RAMP OUTA ¬
12
¬ SS
OUTB ¬9
CS1
CS2
VIN
C19
1 F
LM5025
TP1
EX VCC
MBR130T1G
16
¬ UVLO
1
U4
GND
TP4
2.2 F
GND
C6
2.2 F
C5
2.2 F
TP3
2
0R
NU
R14
D4
0R
R11
NU
D3
C20
100 pF
GND
C8
0.1 uF
C27
NU
C28
NU
C24
1 F
6.3V
GND
C21
2.2 F
5V
C9
0.01 uF
HB
LI
10
4
3
5
LM5113
LOL 9
LOH
HOL
GND
8 VSS
7
6 HI
HS
HOH
0.1 F
1 VDD
2
U3
C25
11
9
7
5
3
1
0
R18
R9
2R
R10
0R
Q1
EPC2001
10
8
6
4
2
21.0k
R19
L1
GND
C26
1 F
MBR130T1G
D2
SER1360-272KL
2.7 H
MBR130T1G
1N4148W-7-F
D6
D5
Q2
EPC2001
1
3
5
7
9
11
2
4
6
8
10
2.2 F
¬
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¬
VIN
¬
¬
VIN
EP
C13
NU
1
GND
3
4
R8
C12
22 F
GND
R16
21.0k
U2
LM8261M5
16.9k
330 pF
C22
GND
+ C1
330 F
1500 pF
C23
C14
1 uF
5
2
C29
1 F
C15
1.5 nF
R5
374
R13
6.98k
R6
21.0k
GND
TP2
R1
10.0
GND
C11
1 F
TP5
C10
22 F
VOUT
J4
VOUT
10V
J2
5
+
-
J1
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Evaluation Board Schematic
Evaluation Board Schematic
Figure 10. Application Circuit: Input 15V to 60V, Output 10V, 800 kHz
AN-2149 LM5113 Evaluation Board
7
Bill of Materials (BOM)
6
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Bill of Materials (BOM)
Table 1. Bill of Materials (BOM)
8
Item
Part
1
C1
Value
Package
Part Number
Manufacturer
CAP, 330uF, 16V, 16mΩ
10mm x 10mm
PCJ1C331MCL1GS
2
Nippon Chemi-Con
C2, C3, C4
CAP, CERM, 2.2uF,
100V, X7R,
1812
C4532X7R2A225M
TDK
3
C5, C6, C7
CAP, CERM, 2.2uF,
100V, X7R
1210
HMK325B7225KN-T
Taiyo Yuden
4
C8
CAP CER .1UF 100V
X7R 0603
0603
GRM188R72A104KA35
D
Murata
5
C9
CAP CER 10000PF 100V
X7R
0603
C1608X7R2A103K
TDK
6
C13
NU
7
C18, C31
CAP, CERM, 0.1uF, 16V,
X7R
0603
C1608X7R1C104K
TDK
8
C10, C12
CAP CER 22UF 16V X7R 1210
C3225X7R1C226K
TDK
9
C14, C11, C19,
C26, C29, C32
CAP, CERM, 1uF, 16V,
X7R
0603
C1608X7R1C105K
TDK
10
C15, C23
CAP, CERM, 1500pF,
25V, +/-5%, C0G/NP0
0603
GRM1885C1E152JA01
D
MuRata
11
C16
CAP, CERM, 220pF,
100V, X7R
0603
06031C221KAT2A
AVX
12
C17
NU
13
C20
CAP, CERM, 100pF, 25V, 0603
X7R
06033C101KAT2A
AVX
14
C21
CAP, CERM, 2.2uF, 10V,
X7R
0603
GRM188R71A225KE15
D
Murata
15
C22
CAP, CERM, 330pF, 50V, 0603
+/-5%, C0G/NP0
GRM1885C1H331JA01
D
Murata
16
C24
CAP, CERM, 1uF, 6.3V,
X5R
0402
C1005X5R0J105M
TDK
17
C25
CAP CER .1UF 16V X7R
0402
GRM155R71C104KA88
D
TDK
18
C27, C28
19
C30
CAP, CERM, 0.01uF,
50V, X7R
0603
GRM188R71H103KA01
D
Murata
20
D1, D2, D5
Diode, Schottky, 30V, 1A
SOD-123
MBR130T1G
ON Semiconductor
21
D3, D4
NU
SOD-323
22
D6
Diode, Ultrafast, 100V,
0.15A
SOD-123
1N4148W-7-F
Diodes Inc
23
L1
Inductor, Shielded E
Core, Ferrite, 2.7uH, 12A
SMD 12.6mmX12.7mm
SER1360-272KLB
Coilcraft
24
Q1, Q2
eGaN FET, 100V, 25A,
7mΩ
4105um X 1632 um
EPC2001
EPC
25
R1
RES, 10.0 ohm, 1%,
0.1W
0603
RC0603FR-0710RL
Yageo America
26
R2
RES, 100k ohm, 1%,
0.125W
0805
CRCW0805100KFKEA
Vishay-Dale
27
R3
RES, 150k ohm, 1%,
0.125W
0805
CRCW0805150KFKEA
Vishay-Dale
28
R4
RES 49.9 OHM 1/8W 1%
0805
CRCW080549R9FKEA
Vishay-Dale
29
R5
RES, 374 ohm, 1%, 0.1W 0603
CRCW0603374RFKEA
Vishay-Dale
30
R6, R16, R19
RES, 21.0k ohm, 1%,
0.1W
RC0603FR-0721KL
Yageo America
NU
AN-2149 LM5113 Evaluation Board
0603
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PCB Layouts
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Table 1. Bill of Materials (BOM) (continued)
7
Item
Part
Value
Package
Part Number
Manufacturer
31
R7
RES, 33.2k ohm, 1%,
0.1W
0603
RC0603FR-0733K2L
Yageo America
32
R8
RES, 16.9k ohm, 1%,
0.1W
0603
RC0603FR-0716K9L
Yageo America
33
R9
RES, 2.00 ohm, 1%,
0.063W
0402
CRCW04022R00FKED
Vishay-Dale
34
R10
RES, 0.0 Ohm, 1/10W
0402
ERJ-2GE0R00X
Panasonic
35
R11, R14, R18
RES, 0 ohm, 5%, 0.1W
0603
ERJ-3GEY0R00V
Panasonic
36
R13
RES, 6.98k ohm, 1%,
0.1W
0603
RC0603FR-076K98L
Yageo America
37
R15
RES, 4.02k ohm, 1%,
0.1W
0603
RC0603FR-074K02L
Yageo America
38
R17
RES, 7.50k ohm, 1%,
0.1W
0603
CRCW06037K50FKEA
Vishay-Dale
39
U1
5.0V, 50 mA LDO
SOT-23
LP2982
Texas Instruments
40
U2
Op Amp
SOT-23
LM8261
Texas Instruments
41
U3
5A, 100V, GaN FET
Driver
DSBGA-10
LM5113
Texas Instruments
42
U4
Active clamp voltage
mode PWM Controller
16–pin TSSOP
LM5025
Texas Instruments
PCB Layouts
Figure 11. Top Side Silk Screen
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Figure 12. Bottom Side Silk Screen
Figure 13. Top Layer
10
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Figure 14. Bottom Layer
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Appendix A 48V to 3.3V Conversion
The LM5113 evaluation board can also be reconfigured for different switching frequency, dead time and
output voltage. By adjusting the resistor R17, the PWM controller LM5025 can operate up to 1MHz. The
dead time can be adjusted with the resistor R15, and/or with RCD circuitry at the inputs of the LM5113.
The output voltage can be adjusted with R16 as follows:
R16
21u V0
k:
20 V0
(1)
It should be noted that the maximum output power may be derated to ensure the safe operation of the
GaN FETs when the evaluation board is configured for the switching frequency beyond the preceding
specifications.
Figure 15 shows the design for a 48V to 3.3V conversion. The switching frequency is set at 500 kHz. It
should be noted that the bias supply for the control circuitry is generated from the internal LDO of the
LM5025. To aid thermal dissipation, sufficient cooling should be provided for the LM5025. Alternatively, an
external 10V supply can be connected to the terminal TP1 EXT VCC to provide the bias voltage for the
control circuitry.
12
48V to 3.3V Conversion
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J3
VIN
48V
2.2 F
C30
0.01 F
GND
GND
C16
220 pF
R2
100k
±1%
2.2 F
GND
C6
C31
0.1 F
C18
0.1 F
R4
±1%
49.9
1
4
3
3
15
¬ SYNC COMP
14
¬ RT
TIME
6 REF
AGND
7
VCC PGND
5
13
8
2
¬ RAMP OUTA ¬
12
¬ SS
OUTB ¬9
CS1
CS2
C19
1 F
VIN
1
D1
TP1
EX VCC
LM5025 MTCE/NOPB
C32
LM5025 MTCECT-ND
1 F
11
10
GND
GND
GND
GND
R15
4.02k
U1 LP2982AIM5-5.0
5
OUT
IN
4
ON/OFF
BYP
MBR130T1G
16
¬ UVLO
U4
GND
TP4
2.2 F
C7
GND
2.2 F
R7
33.2k
R3
150k
2.2 F
C5
R17
12k
C17
NU
2.2 F
C4
2
0R
NU
R14
D4
0R
R11
NU
D3
C20
100 pF
GND
C8
0.1 uF
C27
NU
C28
NU
C24
1 F
6.3V
GND
C21
2.2 F
5V
C9
0.01 uF
HB
LI
4
3
5
LM5113
LOL 9
1
LOH 0
HOL
GND
8 VSS
7
6 HI
HS
HOH
0.1 F
1 VDD
2
U3
C25
1
0
R18
R9
2R
R10
0R
Q1
EPC2001
10
8
6
4
2
21.0k
R19
L1
GND
C26
1 F
MBR130T1G
D2
SER1360-272KL
2.7 H
MBR130T1G
1N4148W-7-F
D6
D5
Q2
EPC2001
1
3
5
7
9
11
2
4
6
8
10
C3
¬
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¬
C2
11
9
7
5
3
C13
NU
1
4.7 nF
C23
C14
1 uF
GND
3
4
220 pF
C22
C12
22 F
GND
R16
4.1k
U2
LM8261M5
7.8k
R8
GND
+ C1
330 F
5
2
TP3
EP
¬
¬
VIN
+
-
J1
C15
1.5 nF
R5
374
C29
1 F
R13
6.98k
R6
21k
GND
TP2
R1
10.0
GND
C11
1 F
TP5
C10
22 F
VOUT
J4
VOUT
3.3V
J2
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Appendix A
Figure 15. Application Circuit: Input 48V, Output 3.3V, 10A, 500 kHz
48V to 3.3V Conversion
13
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non-designated products, TI will not be responsible for any failure to meet ISO/TS16949.
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Applications
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www.ti.com/audio
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Amplifiers
amplifier.ti.com
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www.ti.com/communications
Data Converters
dataconverter.ti.com
Computers and Peripherals
www.ti.com/computers
DLP® Products
www.dlp.com
Consumer Electronics
www.ti.com/consumer-apps
DSP
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Energy and Lighting
www.ti.com/energy
Clocks and Timers
www.ti.com/clocks
Industrial
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Interface
interface.ti.com
Medical
www.ti.com/medical
Logic
logic.ti.com
Security
www.ti.com/security
Power Mgmt
power.ti.com
Space, Avionics and Defense
www.ti.com/space-avionics-defense
Microcontrollers
microcontroller.ti.com
Video and Imaging
www.ti.com/video
RFID
www.ti-rfid.com
OMAP Applications Processors
www.ti.com/omap
TI E2E Community
e2e.ti.com
Wireless Connectivity
www.ti.com/wirelessconnectivity
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