DG449
Vishay Siliconix
High Voltage Single SPDT Analog Switch in SOT23-8
DESCRIPTION
FEATURES
The DG449 is a dual supply single-pole/double-throw
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(SPDT) switches. On resistance is 38  and flatness is 2.6 
max over the specified analog signal range. These analog
switches were designed to provide high speed, low error
switching of precision analog signals. The primary
application areas are in the routing and switching in
telecommunications and test equipment. Combining low
power, low leakages, low on-resistance and small physical
size, the DG449 is also ideally suited for portable and battery
powered industrial and military equipment.
The DG449 operates either from a single + 7 V to 36 V
supply or from dual ± 4.5 V to ± 20 V supplies. It is offered in
± 15 V analog signal range
On-resistance - RDS(on): 38 max.
VL logic supply not required
TTL CMOS input compatible
Rail to rail signal handling
Dual or single supply operation
BENEFITS
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Wide dynamic range
Low signal errors and distortion
Break-before-make switching action
Simple interfacing
Small SOT23-8ld package; reduced board space
Improved reliability
the very popular, small SOT23-8 package.
APPLICATIONS
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Precision test equipment
Precision instrumentation
Communications systems
PBX, PABX systems
Audio equipment
Redundant systems
PC multimedia boards
Hard disc drives
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG449
TRUTH TABLE
Logic
0
1
NC
ON
OFF
NO
OFF
ON
Logic "0" 0.8 V
Logic "1" 2.4 V
Document Number: 73897
S11-0097-Rev. B, 24-Jan-11
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DG449
Vishay Siliconix
ORDERING INFORMATION
Temp. Range
- 40 to 85 °C
Package
8-Pin SOT23
Part Number
DG449DS-T1-E3
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Symbol
Parameter (Voltages Referenced to V-)
V+
Unit
44
25
GND
(V-) - 2 V to (V+) + 2 V
or 30 mA, whichever occurs first
30
Digital Inputsa, Vno/nc, VCOM
Current , (Any Terminal) Continuous
Current (NO, NC or COM) Pulsed at 1 ms, 10 % duty cycle
Storage Temperature
Power Dissipation
Limit
(Package)b
8-Pin SOT-23c
100
V
mA
- 65 to 150
°C
675
mW
Notes:
a. Signals on NO, NC, COM, or IN exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 8.4 mW/°C above 70 °C.
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Document Number: 73897
S11-0097-Rev. B, 24-Jan-11
DG449
Vishay Siliconix
SPECIFICATIONSa
Parameter
Symbol
Analog Switch
Analog Signal Rangee
VANALOG
On-Resistance
RON
Test Conditions
Unless Otherwise Specified
V+ = 15 V, V- = - 15 V
VIN = 2.4 V, 0.8 Vf
Ino/nc = 1 mA, VCOM = ± 8.5 V
V+ = 13.5 V, V- = - 13.5 V
On Resistance MATCH
RON
On-Resistance Flatness
RON
Flatness
Ino/nc = 1 mA, VCOM = ± 5 V, 0 V
V+ = 13.5 V, V- = - 13.5 V
Ino/nc(off)
V+ = 16.5, V- = - 16.5 V
VCOM = ± 15.5 V
Vno/nc = -/+ 15.5 V
Switch Off Leakage Current
ICOM(off)
Channel On Leakage Current
ICOM(on)
V+ = 16.5 V, V- = - 16.5
VCOM = Vno/nc = ± 15.5 V
D Suffix
- 40 °C to 85 °C
Temp.b
Min.d
Full
Room
Full
Room
Full
Room
Full
Room
Full
Room
Full
Room
Full
- 15
Full
Full
2.4
Typ.c
38
2.6
-1
- 10
-1
- 10
-2
- 20
- 0.1
- 0.1
- 0.1
Max.d
Unit
15
45
57
5
6
7
8
1
10
1
10
2
20
V

nA
Digital Control
Input, High Voltage
Input, Low Voltage
IINH
IINL
Input Capacitancee
CIN
Input Current VIN High or Low
IIN
0.8
Room
VIN = 0 or 5 V
4
-1
1
V
pF
µA
Dynamic Characteristics
Q
CL = 1 nF, Vgen = 0 V, Rgen = 0 
Room
Full
Room
Full
Room
OIRR
RL = 50 , CL= 5 pF, f = 1 MHz
Room
XTALK
RL = 50 , CL= 5 pF, f = 1 MHz
Cno/nc(off)
f = 1 MHz
Room
8
CCOM(on)
f = 1 MHz
Room
18
Room
Full
Room
Full
4
V+ = 16.5 V, V- = - 16.5 V
VIN = 0, 5 V or, V+
Turn-On Time
tON
Turn-Off Time
tOFF
Charge Injectione
Off-Isolatione
Crosstalke
Source NO, NC Off Capacitance
Channel On Capacitancee
e
RL = 300 , CL = 35 pF
Vno/nc = ± 10 V
107
- 69
69
146
155
104
116
5
ns
pC
dB
- 80
pF
Power Supplies
Positive Supply Current
I+
Negative Supply Current
I-
Document Number: 73897
S11-0097-Rev. B, 24-Jan-11
-1
-3
20
30
µA
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DG449
Vishay Siliconix
SPECIFICATIONSa
Parameter
Symbol
Analog Switch
Analog Signal Rangee
VANALOG
On-Resistance
RON
On-Resistance MATCH
RON
On-Resistance Flatness
RON
Flatness
Test Conditions
Unless Otherwise Specified
V+ = 12 V, V- = 0 V
VIN = 2.4 V, 0.8 Vf
Ino/nc = 1 mA, VCOM = 3, 8 V
V+ = 10.8 V
Ino/nc = 1 mA, VCOM = 2, 6, 10 V
V+ = 10.8 V
D Suffix
- 40 °C to 85 °C
Temp.b
Min.d
Full
Room
Full
Room
Full
0
Typ.c
67
Max.d
Unit
12
85
96
4
5
V
Room
Full
17
25
31
133
168
192
92
96
3

Dynamic Characteristics
Q
CL = 1 nF, Vgen = 0 V, Rgen = 0 
Room
Full
Room
Full
Room
I+
V+ = 13.2 V, VIN = 0 V, 5 V or V+
Room
Full
Turn-On Time
tON
Turn-Off Time
tOFF
Charge Injectione
VNO, NC = 10 V, RL = 300 , CL = 35 pF
58
6
nS
pC
Power Supplies
Positive Supply Current
20
30
µA
Notes:
a. Refer to PROCESS OPTION FLOWCHART .
b. Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 73897
S11-0097-Rev. B, 24-Jan-11
DG449
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
105
140
I NO or I NC = 1 mA
95
75
65
± 12 V
55
± 10 V
± 13.5 V
±8V
45
± 15 V
35
25
V+ = 9 V
80
V+ = 10.8 V
V+ = 12 V
60
V+ = 20 V
V+ = 24 V
40
± 20 V
V+ = 36 V
20
0
- 15
- 10
-5
0
5
10
15
20
0
4
8
12
16
20
24
28
32
36
VCOM - Analog Voltage (V)
VCOM - Analog Voltage (V)
On Resistance vs. VCOM and Single Supply Voltage
RON vs. VCOM and Dual Supply Voltage
65
105
V+ = + 15 V
V- = - 15 V
I NO or I NC = 1 mA
+ 85 °C
35
+ 25 °C
25
- 40 °C
I NO or I NC = 1 mA
85
r ON – On-Resistance (Ω)
45
V+ = + 12 V
V- = 0 V
95
55
r ON – On-Resistance (Ω)
TA = 25 °C
100
15
5
- 20
I NO or I NC = 1 mA
V+ = 7 V
120
r ON – On-Resistance (Ω)
± 4.5 V
85
r ON – On-Resistance (Ω)
TA = 25 °C
+ 85 °C
75
65
+ 25 °C
55
45
- 40 °C
35
25
15
15
5
- 15
5
- 10
-5
0
5
10
15
0
2
VCOM - Analog Voltage (V)
ICOM(on)
50
ICOM(off)
INO(off) /I NC(off)
- 50
- 100
12
ICOM(on)
1000
INO(off) /I NC(off)
100
10
- 150
V+ = + 16.5 V
V- = - 16.5 V
ICOM(off)
- 200
- 250
- 20
10
10000
Leakage Current (pA)
I S , ID Leakage Current (pA)
V+ = + 16.5 V
V- = - 16.5 V
T = 25 °C
100
0
8
100000
250
150
6
On Resistance vs. VCOM and Temperature
On Resistance vs. VCOM and Temperature
200
4
VCOM - Analog Voltage (V)
- 15
- 10
-5
0
5
10
15
VCOM ,VNO, VNC - Drain-Source Voltage
20
1
- 60 - 40 - 20
0
20
40
60
80
100 120 140
Temperature (°C)
Leakage Current vs. Temperature
Leakage Current vs. Analog Voltage
Document Number: 73897
S11-0097-Rev. B, 24-Jan-11
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DG449
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
1000
100
+ 25 °C
V+ = 12 V
V- = 0 V
10
I+
Supply Current (µA)
Supply Current (µA)
100
IGND
1
0.1
0.01
V+ = 15 V
V- = - 15 V
10
0.001
V+ = + 15 V
V- = - 15 V
0.0001
I0.00001
- 60 - 40 - 20
0
20
40
60
80
1
100 120 140
0
Temperature (°C)
1
2
5
6
8
7
9 10 11 12 13 14 15
Vin Input Voltage (V)
Supply Current vs. Temperature
Supply Current vs. Input Voltage
10 m
150
V+ = + 15 V
V- = - 15 V
V = ± 15 V
1m
125
t ON
100 µ
I+
10 µ
t ON , t OFF (ns)
Supply Current (A)
4
3
I
GND
1µ
I-
100
75
t OFF
50
100 n
25
10 n
10
100
1K
10K
10M
1M
100K
- 55
- 35
- 15
Supply Voltage (V)
5
45
25
65
85
105
125
Temperature (°C)
Supply Current vs. Input Switching Frequency
Switching Time vs. Temperature and Single Supply Voltage
280
10
0
240
Loss, OIRR, X TA LK (dB)
- 10
t ON , t OFF (ns)
200
t ON V = + 12 V
160
120
80
LOSS
- 20
- 30
- 40
- 50
OIRR
- 60
X TALK
- 70
- 80
t OFF V = + 12 V
40
V± = + 15 V
V- = - 15 V
RL = 50 Ω
- 90
- 100
0
- 55
- 35
- 15
5
25
45
65
85
105
125
Temperature (°C)
Switching Time vs. Temperature and Single Supply Voltage
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- 110
100K
1M
10M
100M
1G
Frequency (Hz)
Insertion Loss, Off-Isolation, Crosstalk vs. Frequency
Document Number: 73897
S11-0097-Rev. B, 24-Jan-11
DG449
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise noted)
50
3.0
40
30
Q - Charge Injection (pC)
V - Switching Threshold (V)
T
2.5
2.0
1.5
1.0
20
10
V+ = + 12 V
0
- 10
- 20
V ± = ± 15 V
- 30
0.5
- 40
- 50
0
0
10
5
20
15
- 15
30
25
-6
- 12 - 9
-3
0
3
6
9
12
15
VNO, VNC - Analog Voltage (V)
Supply Voltage (V)
Charge Injection vs. Analog Voltage
Switching Threshold vs. Supply Voltage
TEST CIRCUITS
VO is the steady state output with the switch on.
+ 15 V
3V
Logic
Input
tr < 20 ns
tf < 20 ns
50 %
V+
Vi
NO or NC
0V
COM
VO
tOFF
IN
RL
300 
V-
GND
CL
35 pF
-15 V
CL (includes fixture and stray capacitance)
VO = Vi
Switch
Input
VS
Switch
Output
0V
Note:
RL
VO
90 %
tON
Logic input waveform is inverted for switches that have the
opposite logic sense.
RL + rON
Figure 1. Switching Time
+ 15 V
Rgen
VO
V+
NO or NC
COM
IN
V gen
VO
CL
1 nF
3V
GND
VO
V-
IN
OFF
ON
OFF
Q = VO x CL
- 15 V
Figure 2. Charge Injection
Document Number: 73897
S11-0097-Rev. B, 24-Jan-11
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DG449
Vishay Siliconix
Figure 3. Off Isolation
+ 15 V
+ 15 V
C
C
V+
NO or NC
VS
VO
COM
0V, 2.4 V
NO or NC
VS
Rg = 50 
RL
IN
GND
-V–
V+
COM
VO
Rg = 50 
C
RL
IN
0 V, 2.4 V
GND
V-
C
- 15 V
Off Isolation = 20 log
- 15 V
VCOM
Figure 4. Insertion Loss
VNO/NC
+ 15 V
C
V+
COM
Meter
0 V , 2.4 V
IN
HP4192A
Impedance
Analyzer
or Equivalent
NO or NC
GND
V-
f = 1 MHz
C
- 15 V
Figure 5. Channel ON/OFF Capacitances
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73897.
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Document Number: 73897
S11-0097-Rev. B, 24-Jan-11
Package Information
Vishay Siliconix
SOT−23 :
8−LEAD
b
e
CL
E1
CL
E
e1
D
CL
A
CL
A2
T
A1
DATUM A
- A-
E1
C
0.10
L
MILLIMETERS
NOTES:
1.
All dimensions are in millimeters.
2.
Foot length measured at intercept point between Datum A and
lead surface.
3.
4.
5.
2
0.20
- A-
Package outline exclusive of mold flash and metal burr.
Package outline inclusive of solder plating.
No molding flash allowed on the top and bottom lead surface.
Dim
Min
A
A1
A2
b
C
D
E
E1
e
e1
L
T
INCHES
Nom
Max
Min
Nom
Max
0.90
1.27
1.45
0.00
0.0762
0.15
0.035
0.05
0.057
0.000
0.003
0.90
1.20
0.006
1.30
0.035
0.047
0.051
0.22
0.09
0.30
0.38
0.009
0.012
0.015
0.152
0.20
0.004
0.006
2.80
0.008
2.9
3.00
0.11
0.114
0.118
2.60
2.8
23.00
0.102
0.11
0.118
1.50
1.65
1.75
0.059
0.065
0.069
0.65 REF
0.026 REF
1.95 REF
0.077 REF
0.35
0.45
0.55
0.014
0.018
0.022
0_
4_
8_
0_
4_
8_
ECN: C-03085—Rev. A, 07-Apr-03
DWG: 5895
Document Number: 72207
09-Apr-03
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Disclaimer

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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Revision: 13-Jun-16
1
Document Number: 91000