DG411, DG412, DG413
Vishay Siliconix
Precision Monolithic Quad SPST CMOS Analog Switches
DESCRIPTION
FEATURES
The DG411 series of monolithic quad analog switches was
designed to provide high speed, low error switching of
precision analog signals. Combining low power (0.35 µW)
with high speed (tON: 110 ns), the DG411 family is ideally
suited for portable and battery powered industrial and military
applications.
To achieve high-voltage ratings and superior switching
performance, the DG411 series was built on Vishay
Siliconix’s high voltage silicon gate process. An epitaxial
layer prevents latchup.
Each switch conducts equally well in both directions when
on, and blocks input voltages up to the supply levels when
off.
The DG411, DG412 respond to opposite control logic as
shown in the Truth Table. The DG413 has two normally open
and two normally closed switches.
• Halogen-free according to IEC 61249-2-21
Definition
• 44 V supply max. rating
• ± 15 V analog signal range
• On-resistance - RDS(on): 25 
• Fast switching - tON: 110 ns
• Ultra low power - PD: 0.35 µW
• TTL, CMOS compatible
• Single supply capability
• Compliant to RoHS Directive 2002/95/EC
BENEFITS
• Widest dynamic range
• Low signal errors and distortion
• Break-bevor-make switching action
• Simple interfacing
APPLICATIONS
•
•
•
•
•
Precision automatic test equipment
Precision data acquisition
Communication systems
Battery powered systems
Computer peripherals
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG411
Dual-In-Line and SOIC
DG411
LCC
D1 IN1 NC IN2 D2
IN1
1
16 IN2
D1
2
15 D2
S1
3
14 S2
V-
13 V+
4
12 VL
5
GND
S4
6
11 S3
D4
7
10 D3
IN4
8
9
Key
3
2
1
20
19
S1
4
18
S2
V-
5
17
V+
NC
6
16
NC
7
15
VL
8
14
S3
GND
S4
9
IN3
10
11
12
13
TRUTH TABLE
Logic
0
1
Logic “0” 0.8 V
Logic “1” 2.4 V
DG411
ON
OFF
DG412
OFF
ON
SW2, SW3
D4 IN4 NC IN3 D3
Top View
Top V iew
DG413
Dual-In-Line and SOIC
IN1
1
16 IN2
D1
2
15 D2
S1
3
14 S2
V-
4
13 V+
GND
5
12 VL
S4
6
11 S3
D4
7
10 D3
IN4
8
9
IN3
Top V iew
Document Number: 70050
S11-1185-Rev. G, 13-Jun-11
DG413
LCC
D1
Key
3
IN1 NC IN2
2
1
20
D2
19
S1
4
18
S2
V-
5
17
V+
Logic
SW1, SW4
NC
6
16
NC
0
OFF
ON
GND
7
15
VL
1
ON
OFF
S4
8
14
S3
9
D4
10
11
12
IN4 NC IN3
Top View
TRUTH TABLE
Logic “0” 0.8 V
Logic “1” 2.4 V
13
D3
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THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG411, DG412, DG413
Vishay Siliconix
ORDERING INFORMATION
Temp. Range
Package
Part Number
DG411DJ
DG411DJ-E3
DG412DJ
DG412DJ-E3
16-pin plastic DIP
DG413DJ
DG413DJ-E3
DG411DY
DG411DY-E3
DG411DY-T1
DG411DY-T1-E3
- 40 °C to 85 °C
DG412DY
DG412DY-E3
DG412DY-T1
DG412DY-T1-E3
16-pin narrow SOIC
DG413DY
DG413DY-E3
DG413DY-T1
DG413DY-T1-E3
DG411DQ-E3
DG411DQ-T1-E3
DG412DQ-E3
DG412DQ-T1-E3
16-pin TSSOP
DG413DQ-E3
DG413DQ-T1-E3
ABSOLUTE MAXIMUM RATINGS
Parameter
Limit
V + to V GND to V VL
25
(GND - 0.3) to (V+) + 0.3
(V-) -2 to (V+) + 2
or 30 mA, whichever occurs first
30
Digital Inputsa, VS, VD
Continuous Current (Any terminal)
Peak Current, S or D (Pulsed at 1 ms, 10 % duty cycle)
Storage Temperature
Power Dissipation (Package)b
Unit
44
100
(AK, AZ suffix)
- 65 to 150
(DJ, DY suffix)
- 65 to 125
16-pin plastic DIPc
470
16-pin narrow SOICd
600
16-pin CerDIPe
900
LCC-20
e
V
mA
°C
mW
900
Notes:
a. Signals on SX, DX, or INX exceeding V + or V - will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 6 mW/°C above 25 °C.
d. Derate 7.6 mW/°C above 75 °C.
e. Derate 12 mW/°C above 75 °C.
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Document Number: 70050
S11-1185-Rev. G, 13-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG411, DG412, DG413
Vishay Siliconix
SPECIFICATIONSa
Parameter
Analog Switch
Symbol
Analog Signal Rangee
Drain-Source
On-Resistance
VANALOG
Channel On Leakage
Current
Digital Control
Input Current, VIN Low
Input Current, VIN High
A Suffix
- 55 °C to 125 °C
Temp.b
Typ.c
Full
V + = 13.5 V, V - = - 13.5 V
IS = - 10 mA, VD = ± 8.5 V
Min.d
D Suffix
- 40 °C to 85 °C
Max.d
Min.d
- 15
15
- 0.25
- 20
- 0.25
- 20
- 0.4
- 40
35
45
0.25
20
0.25
20
0.4
40
Unit
- 15
15
V
- 0.25
-5
- 0.25
-5
- 0.4
- 10
35
45
0.25
5
0.25
5
0.4
10
ID(on)
V + = 16.5 V, V - = - 16.5 V
VS = VD = ± 15.5 V
IIL
VIN under test = 0.8 V
Full
0.005
- 0.5
0.5
- 0.5
0.5
IIH
VIN under test = 2.4 V
Full
0.005
- 0.5
0.5
- 0.5
0.5
Room
Full
Room
Full
110
RL = 300 , CL = 35 pF
VS = ± 10 V, see figure 2
Room
25
Room
5
Room
68
Room
85
IS(off)
ID(off)
V + = 16.5, V - = - 16.5 V
VD = ± 15.5 V, VS = ± 15.5 V
25
Max.d
Room
Full
Room
Full
Room
Full
Room
Full
RDS(on)
Switch Off Leakage
Current
Test Conditions
Unless Specified
V + = 15 V, V - = - 15 V
VL = 5 V, VIN = 2.4 V, 0.8 Vf
± 0.1
± 0.1
± 0.1

nA
µA
Dynamic Characteristics
Turn-On Time
tON
Turn-Off Time
tOFF
Break-Before-Make
Time Delay
tD
Charge Injection
Q
e
Off Isolation
Channel-to-Channel
Crosstalke
OIRR
XTALK
DG413 only, VS = 10 V
RL = 300 , CL = 35 pF
Vg = 0 V, Rg = 0 
CL = 10 nF
RL = 50 CL = 5 pF,
f = 1 MHz
100
Source Off Capacitancee
CS(off)
Room
9
Drain Off Capacitancee
Channel On
CD(off)
Room
9
Room
35
Room
Full
Room
Full
Room
Full
Room
Full
0.0001
Capacitancee
Power Supplies
CD(on)
Positive Supply Current
I+
Negative Supply Current
I-
Logic Supply Current
IL
Ground Current
Document Number: 70050
S11-1185-Rev. G, 13-Jun-11
f = 1 MHz
IGND
V + = 16.5 V, V - = - 16.5 V
VIN = 0 V or 5 V
175
240
145
160
- 0.0001
ns
pC
dB
pF
1
5
-1
-5
0.0001
- 0.0001
175
220
145
160
1
5
-1
-5
1
5
-1
-5
1
5
µA
-1
-5
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This document is subject to change without notice.
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DG411, DG412, DG413
Vishay Siliconix
SPECIFICATIONSa (for Unipolar Supplies)
Parameter
Symbol
Test Conditions
Unless Specified
V + = 12 V, V - = 0 V
VL = 5 V, VIN = 2.4 V, 0.8 Vf
Temp.b
12
12
V
V + = 10.8 V,
IS = - 10 mA, VD = 3 V, 8 V
Room
Full
40
80
100
80
100

Room
Hot
Room
Hot
175
RL = 300 , CL = 35 pF
VS = 8 V, see figure 2
250
400
125
140
250
315
125
140
Room
25
Room
25
Room
Hot
Room
Hot
Room
Hot
Room
Hot
0.0001
A Suffix
- 55 °C to 125 °C
Typ.c
Min.d
D Suffix
- 40 °C to 85 °C
Max.d
Min.d
Unit
Max.d
Analog Switch
VANALOG
Analog Signal Rangee
Drain-Source
RDS(on)
On-Resistance
Dynamic Characteristics
Turn-On Time
tON
Turn-Off Time
tOFF
Break-Before-Make
Time Delay
Charge Injection
Full
DG413 only, VS = 8 V
RL = 300 , CL = 35 pF
Vg = 6 V, Rg = 0 , CL = 10 nF
tD
Q
95
ns
pC
Power Supplies
Positive Supply Current
I+
Negative Supply Current
I-
Logic Supply Current
IL
V + = 13.5 V, VIN = 0 V or 5 V
Ground Current
IGND
1
5
- 0.0001
1
5
-1
-5
0.0001
-1
-5
1
5
- 0.0001
1
5
-1
-5
µA
-5
Notes:
a.Refer to process option flowchart.
b.Room = 25 °C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d.The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e.Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
45
300
TA = 25 °C
±5V
VL = 5 V
250
40
35
200
±8V
30
V+ = 3 V
VL = 3 V
± 10 V
25
150
± 12 V
± 15 V
V+ = 5 V
V
R DS(on) - Drain-Source On-Resistance (Ω)
50
20
100
15
± 20 V
8V
10
12 V
50
15 V
5
0
- 20
20 V
0
- 15
- 10
-5
0
5
10
15
20
VD - Drain V oltage (V)
On-Resistance vs. VD and Power Supply Voltage
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0
2
4
6
8
10 12 14
VD - Drain Voltage (V)
16
18
20
On-Resistance vs. VD and Unipolar Supply Voltage
Document Number: 70050
S11-1185-Rev. G, 13-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG411, DG412, DG413
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
40
V+ = 15 V
V- = - 15 V
VL = 5 V
TA = 25 °C
20
I S, I D (pA)
10
R DS(on) - Drain-Source On-Resistance ()
35
30
ID(off)
0
IS(off)
- 10
ID(on)
- 20
- 30
- 40
- 50
- 15
- 10
-5
0
5
10
30
125 °C
25
85 °C
20
25 °C
15
- 55 °C
10
5
- 15
- 60
15
V+ = 15 V
V- = - 15 V
VL = 5 V
- 10
Leakage Current vs. Analog Voltage
0
5
10
15
ID, IS Leakages vs. Temperature
140
100
V+ = 15 V
V- = - 15 V
VL = 5 V
80
120
100
60
V+ = 15 V
V- = - 15 V
VL = 5 V
CL = 10 nF
80
40
60
Q (pC)
Q (pC)
-5
VD - Drain Voltage (V)
VD or V S - Drain or Source Voltage (V)
CL = 10 nF
20
CL = 1 nF
40
20
0
0
CL = 1 nF
- 20
- 20
- 40
- 40
- 60
- 15
- 10
-5
0
5
VS - Source Voltage (V)
10
- 60
- 15
15
-5
0
5
10
15
VD - Drain Voltage (V)
Charge Injection vs. Analog Voltage
Charge Injection vs. Analog Voltage
3.5
240
210
3.0
180
VL = 7.5 V
2.0
6.5 V
1.5
1.0
5.5 V
4.5 V
0.5
t ON , t OFF (ns)
2.5
V TH (V)
- 10
V+ = 15 V
V- = - 15 V
VL = 5 V
VS = 10 V
150
tON
120
tOFF
90
60
30
0
5
10
15
20
25
30
35
40
(V+)
Input Switching Threshold vs. Supply Voltage
Document Number: 70050
S11-1185-Rev. G, 13-Jun-11
0
- 55 - 35
- 15
5
25
45
65
85
105 125
Temperature (°C)
Switching Time vs. Temperature
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DG411, DG412, DG413
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100 mA
V+ = 15 V
V- = - 15 V
VL = 5 V
10 mA
= 1 SW
= 4 SW
1 mA
I SUPPLY
I+, I100 µA
10 µA
IL
1 µA
100 nA
10 nA
10
100
1K
10K
100K
1M
10M
f - Frequency (Hz)
Supply Current vs. Input Switching Frequency
SCHEMATIC DIAGRAM (Typical Channel)
V+
S
VL
VLevel
Shift/
Drive
VIN
V+
GND
D
V-
Figure 1.
TEST CIRCUITS
+5V
+ 15 V
Logic
Input
tr < 20 ns
tf < 20 ns
3V
50 %
0V
V+
VL
± 10 V
S
tON
D
Switch
Input*
VO
VS
VO
IN
GND
RL
300 
V-
CL
35 pF
Switch
Output
Switch
Input*
- 15 V
VO = V S
0V
tON
90 %
VO
- VS
* V S = 10 V for t ON, V S = - 10 V for tOFF
CL (includes fixture and stray capacitance)
RL
90 %
Note:
RL + rDS(on)
Logic input waveform is inverted for switches that
have the opposite logic sense control
Figure 2. Switching Time
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Document Number: 70050
S11-1185-Rev. G, 13-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
DG411, DG412, DG413
Vishay Siliconix
TEST CIRCUITS
+5V
+ 15 V
3V
Logic
Input
VL
VS1
S1
D1
Switch
Output
IN2
RL1
300 
V-
GND
90 %
VO2
D2
S2
0V
VS1
VO1
VO1
IN1
VS2
50 %
V+
RL2
300 
0V
VS2
VO2
CL1
35 pF
CL2
35 pF
0V
Switch
Output
90 %
tD
tD
- 15 V
CL (includes fixture and stray capacitance)
Figure 3. Break-Before-Make (DG413)
VO
Rg
+5V
+ 15 V
VL
V+
S
VO
INX
OFF
D
IN
Vg
ON
OFF
VO
CL
10 nF
3V
V-
GND
INX
OFF
ON
Q = V O x CL
OFF
INX dependent on switch configuration Input polarity determined
by sense of switch.
- 15 V
Figure 4. Charge Injection
C
+5V
+ 15 V
VL
V+
D1
S1
VS
Rg = 50 
C
50 
IN1
0 V, 2.4 V
S2
D2
VO
NC
0 V, 2.4 V
RL
IN2
GND
XTA LK Isolation = 20 log
V-
C
VS
VO
- 15 V
C = RF bypass
Figure 5. Crosstalk
Document Number: 70050
S11-1185-Rev. G, 13-Jun-11
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DG411, DG412, DG413
Vishay Siliconix
+5V
+ 15 V
+5V
C
+ 15 V
C
C
VL
V+
S
VS
C
VO
D
VL
V+
S
Rg = 50 
RL
50 
IN
0 V, 2.4 V
Meter
IN
GND
V-
C
HP4192A
Impedance
Analyzer
or Equivalent
0 V, 2.4 V
D
GND
- 15 V
Off Isolation = 20 log
V-
C
VS
VO
- 15 V
C = RF Bypass
Figure 7. Source/Drain Capacitances
Figure 6. Off Isolation
APPLICATIONS
Single Supply Operation:
Summing Amplifier
The DG411, DG412, DG413 can be operated with unipolar
supplies from 5 V to 44 V. These devices are characterized
and tested for unipolar supply operation at 12 V to facilitate
the majority of applications. In single supply operation, V+ is
tied to VL and V- is tied to 0 V. See Input Switching Threshold
vs. Supply Voltage curve for VL versus input threshold
requirments.
When driving a high impedance, high capacitance load such
as shown in figure 8, where the inputs to the summing
amplifier have some noise filtering, it is necessary to have
shunt switches for rapid discharge of the filter capacitor, thus
preventing offsets from occurring at the output.
R1
R2
VIN 1
C1
R5
R3
R4
VIN 2
VOUT
+
C2
R6
DG413
Figure 8. Summing Amplifier
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?70050.
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Document Number: 70050
S11-1185-Rev. G, 13-Jun-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Package Information
Vishay Siliconix
SOIC (NARROW):
16ĆLEAD
JEDEC Part Number: MS-012
MILLIMETERS
16
15
14
13
12
11
10
Dim
A
A1
B
C
D
E
e
H
L
Ĭ
9
E
1
2
3
4
5
6
7
8
INCHES
Min
Max
Min
Max
1.35
1.75
0.053
0.069
0.10
0.20
0.004
0.008
0.38
0.51
0.015
0.020
0.18
0.23
0.007
0.009
9.80
10.00
0.385
0.393
3.80
4.00
0.149
0.157
1.27 BSC
0.050 BSC
5.80
6.20
0.228
0.244
0.50
0.93
0.020
0.037
0_
8_
0_
8_
ECN: S-03946—Rev. F, 09-Jul-01
DWG: 5300
H
D
C
All Leads
e
Document Number: 71194
02-Jul-01
B
A1
L
Ĭ
0.101 mm
0.004 IN
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Package Information
Vishay Siliconix
PDIP: 16ĆLEAD
16
15
14
13
12
11
10
9
E
E1
1
2
3
4
5
6
7
8
D
S
Q1
A
A1
L
15°
MAX
C
B1
e1
Dim
A
A1
B
B1
C
D
E
E1
e1
eA
L
Q1
S
B
eA
MILLIMETERS
Min
Max
INCHES
Min
Max
3.81
5.08
0.150
0.200
0.38
1.27
0.015
0.050
0.38
0.51
0.015
0.020
0.89
1.65
0.035
0.065
0.20
0.30
0.008
0.012
18.93
21.33
0.745
0.840
7.62
8.26
0.300
0.325
5.59
7.11
0.220
0.280
2.29
2.79
0.090
0.110
7.37
7.87
0.290
0.310
2.79
3.81
0.110
0.150
1.27
2.03
0.050
0.080
0.38
1.52
.015
0.060
ECN: S-03946—Rev. D, 09-Jul-01
DWG: 5482
Document Number: 71261
06-Jul-01
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Package Information
Vishay Siliconix
CERDIP: 16ĆLEAD
16
15
14
13
12
11
10
9
E1 E
1
2
3
4
5
6
7
8
D
S
Q1
A
A1
L1
L
e1
C
B
B1
MILLIMETERS
Dim
A
A1
B
B1
C
D
E
E1
e1
eA
L
L1
Q1
S
∝
eA
INCHES
Min
Max
Min
Max
4.06
5.08
0.160
0.200
0.51
1.14
0.020
0.045
0.38
0.51
0.015
0.020
1.14
1.65
0.045
0.065
0.20
0.30
0.008
0.012
19.05
19.56
0.750
0.770
7.62
8.26
0.300
0.325
6.60
7.62
0.260
0.300
2.54 BSC
∝
0.100 BSC
7.62 BSC
0.300 BSC
3.18
3.81
0.125
0.150
3.81
5.08
0.150
0.200
1.27
2.16
0.050
0.085
0.38
1.14
0.015
0.045
0°
15°
0°
15°
ECN: S-03946—Rev. G, 09-Jul-01
DWG: 5403
Document Number: 71282
03-Jul-01
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1
Packaging Information
Vishay Siliconix
20ĆLEAD LCC
A1
D
L1
A
Dim
28
e
1
2
E
A
A1
B
D
E
e
L
L1
MILLIMETERS
Min
Max
INCHES
Min
Max
1.37
2.24
0.054
0.088
1.63
2.54
0.064
0.100
0.56
0.71
0.022
0.028
8.69
9.09
0.342
0.358
8.69
9.09
0.442
0.358
1.27 BSC
0.050 BSC
1.14
1.40
0.045
0.055
1.96
2.36
0.077
0.093
ECN: S-03946—Rev. B, 09-Jul-01
DWG: 5321
L
Document Number: 71290
02-Jul-01
B
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1
Application Note 826
Vishay Siliconix
RECOMMENDED MINIMUM PADS FOR SO-16
RECOMMENDED MINIMUM PADS FOR SO-16
0.372
(9.449)
0.152
0.022
0.050
0.028
(0.559)
(1.270)
(0.711)
(3.861)
0.246
(6.248)
0.047
(1.194)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
APPLICATION NOTE
Return to Index
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24
Document Number: 72608
Revision: 21-Jan-08
Legal Disclaimer Notice
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Vishay
Disclaimer

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“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
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the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
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typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
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time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Revision: 13-Jun-16
1
Document Number: 91000