ANALOG FEEDBACK
IGBTs Improve to Satisfy Diverse Applications
By David Morrison, Editor in Chief
I
GBT product developments appear to have accelerated lately with the introduction of several discrete
devices and modules aimed at a variety of growing
applications. Uninterruptible power systems and
inverters for solar energy systems are among the
applications driving recent IGBT development of late. But
applications such as industrial welders, switch-mode power
supplies (SMPS) and motor drives are also being targeted.
The new devices feature improvements in silicon and
packaging that enable operation at higher switching frequencies, lower losses and better thermal management.
Earlier this month, Vishay introduced a series of halfbridge IGBT modules in the industry-standard Int-A-Pak
package. The series consists of eight 600-V and 1200-V
devices for high, hard-switching operating frequencies in
standard and ultrafast speeds (Fig. 1).
The GA100TS60SFPbF and GA200HS60S1PbF offer
standard punch-through (PT) IGBT technology, while
the GA200TS60UPbF, GA75TS120UPbF and GA100TS120UPbF devices use Generation 4 technology for
tighter parameter distribution and high efficiency. The
GB100TS60NPbF, GB150TS60NPbF and GB200TS60NPbF
modules offer Generation 5 nonpunch-through (NPT)
technology for the added benefit of 10-μs short-circuit
capabilities.
The GA100TS60SFPbF and GA200HS60S1PbF are standard-speed devices optimized for hard-switching operating
frequencies up to 1 kHz. The other six IGBTs are ultrafast
modules copackaged with HEXFRED ultrasoft-recovery
anti-parallel diodes for use in bridge configurations. The
ultrafast devices are designed for operation from 8 kHz to 60
kHz in hard switching and > 200 kHz in resonant mode.
Current ratings range from 75 A to 200 A with low power
losses, Vishay’s new IGBT series is optimized for isolated
and nonisolated converters, switches, inverters and choppers in high-frequency industrial-welding, UPS, SMPS,
solar-inverter and motor-drive applications. For output
inverter TIG welder applications, the IGBTs offer the lowest
VCEON at rated current available in the market for “S” series
modules, according to the vendor (Table 1).
Samples and production quantities of the IGBT modules are available now. Pricing ranges from $42 to $72.71
depending on the model ordered.
Last month, International Rectifier introduced a family
of 600-V IGBTs that it says can reduce power dissipation
by up to 30% in UPS and solar-inverter applications up to
3 kW when compared with previous-generation IGBTs.
These application-specific devices use IR’s latest-generation
field-stop trench technology to reduce conduction and
switching losses, and are optimized for switching at 20
kHz with low short-circuit requirements. This combination
enables higher-efficiency power conversion in UPS and
solar-inverter applications (Fig. 2).
Fig. 1. Vishay’s series of 600-V and 1200-V half-bridge IGBT mod“Traditionally, IGBT devices have excessive switching
ules in the Int-A-Pak package offer hard-switching operation at
losses at the frequencies used in UPS and solar inverters.
frequencies up to 1 kHz or 60 kHz.
IR’s new Trench IGBT devices have lower
Part number
Speed
Technology Voltage Current VCEON typical
switching energy coupled with low con(V)
rating (A)
(V)
duction losses. These lower losses provide
GA100TS60SFPbF standard Gen. 4 PT
600
100
1.39
higher efficiency, reducing the size of the
GA200HS60S1PbF standard Gen. 4 PT
600
200
1.13
unit and the cost of power generation to the
GA200TS60UPbF
ultrafast
Gen. 4 PT
600
200
1.74
end user,” says Carl Blake, IR’s product marGA75TS120UPbF
ultrafast
Gen. 4 PT
1200
75
2.5
keting director, Energy Saving Products.
GA100TS120UPbF ultrafast
Gen. 4 PT
1200
100
2.25
Copackaged with ultrafast soft recovery
GB100TS60NPbF
ultrafast Gen. 5 NPT
600
100
2.6
diodes, the new family of IGBTs has lower
GB150TS60NPbF
ultrafast Gen. 5 NPT
600
150
2.64
collector-to-emitter saturation voltage
GB200TS60NPbF
ultrafast Gen. 5 NPT
600
200
2.6
(VCEON) and total switching energy (ERS)
than PT- and NPT-type IGBTs (Table 2).
Table 1. Vishay’s 600-V and 1200-V half-bridge IGBT modules.
42
Power Electronics Technology March 2008
www.powerelectronics.com
These IGBTs also feature a square reverse bias
operating area and are 100% tested for clamped
inductve load. The latter feature, which is akin to
avalanche testing, is a first in the industry according to Blake.
Pricing for the devices begins at $0.68 for the
IRGB4059DPbF, $0.82 for the IRGB4045DPbF,
$0.84 for the IRGB4060DPbF, $1 for the IRGB4064DPbF and $2.79 for the IRGP4063DPbF, each
Fig. 2. International Rectifier’s 600-V
Fig. 3. Powerex’s NX-Series of IGBTs
in 10,000-unit quantities.
IGBTs
feature
silicon
and
packaging
feature an industry-standard footprint
Another IGBT family introduced last month is
that
have
been
optimized
for
UPS
and pinout, but employ an AIN ceramic
the NX-Series from Powerex. IGBTs in this series
and solar inverter applications.
substrate.
feature an industry-standard footprint and pinout,
but with low thermal resistance thanks to the device’s use
Part
Package *Rated
ETS (mJ) at
VCEON
of an aluminum nitride (AlN) ceramic substrate. The NXnumber
current
rated current,
(V)
(A)
TJ = 175ºC
Series was developed with a new package design that uses a
IRGB4059D
TO-220
4
2.20
210
building-block concept to provide multiple configuration
IRGB4045D
TO-220
6
2.14
329
options, improved manufacturability, reduced development
time and lower cost. NX-Series IGBTs were designed for
IRGB4060D
TO-220
8
1.95
405
general-purpose motor drives. However, dual and single
IRGB4064D
TO-220
10
2.00
415
types are also applicable to power quality and alternate
IRGP4063D
TO-247
48
2.10
3210
energy applications.
Table 2. International Rectifier’s 600-V Trench IGBTs with diode copack.
The NX-Series features high thermal conductivity AlN
*TCASE =100°C and VGE = 15 V.
ceramic to provide improved heat transfer from the power
chips to the heatsink. The result is lower chip temperature
option for switching applications at 300 V and below. His(TJ) and a more than 10-fold improvement in thermal
torically, for circuits operating up to 300 V, the MOSFET
cycle life.
has been the discrete device of choice. However, this new
A common base plate and case shell are used with interseries of IGBTs offers an alternative to MOSFETs for circuits
changeable screw terminal box and pin terminals to create
that are hard switching up to 100 kHz.
single, dual, seven-pack and converter-inverter-brake circuit
These devices are optimized for low VSAT with a higher
configurations ranging from 75 A to 600 A at 600 V and
current-density capability than an equivalent MOSFET.
35 A to 600 A at 1200 V with NTC thermistor output in a
Therefore, the 300-V IGBTs can operate with better effi17-mm-thin package.
ciency and with a smaller die size, resulting in lower costs
This series also uses the company’s fifth-generation Carrier
when compared to 300-V power MOSFETs. These devices
Stored Trench Gate Bipolar Transistor (CSTBT) chip techare also rugged in unclamped inductive switching applicanology. The CSTBT structure provides reduced switching
tions, comparable to most rugged power MOSFETs.
and conduction losses compared to conventional IGBTs.The
IXYS’ 300-V IGBTs offer a cost-effective alternative to
combination of AlN ceramic, high elastic Sn-Ag-Cu solder
MOSFETs for applications such as power factor correcand a proprietary technique to ensure uniform solder thicktion, UPS systems, inverters for solar energy, switch-mode
ness enable the devices to achieve high power-cycling capaor resonant-mode converters and power supplies, pulse
bility. Samples of NX-Series IGBTs are available for $62 to
generators, PWM light control, PWM heaters, capacitive
$177 depending on the selected rating and configuration.
discharge applications and various motor-control applicaLate last year, IXYS released a family of fast 300-V IGBTs
tions. In addition to these fast 300-V IGBTs, the company
built in the the company’s robust HDMOS IGBT process.
plans to introduce 600-V versions shortly.
These IGBTs can hard switch up to 100 kHz and carry curEarlier last year, Semikron introduced what it described
rent ratings ranging from 42 A to 120 A: IXGH42N30C3,
as “the first 100% solder-free IGBT module.” The SKiM
IXGH60N30C3, IXGH85N30C3, IXGH100N30C3 and
module targets 22-kW to 150-kW train drive converters
IXGH120N30C3. Although these are not the first 300-V
in electric and hybrid vehicles, and has a five times higher
IGBTs offered by IXYS, they operate at higher switching
temperature cycling capability versus modules with base
frequencies than the previously introduced devices.
plate and soldered terminals.
These IGBTs are currently available in the TO-247 packThe module’s solder-free pressure contact technology
age. Additional package offerings will be available in the
and sintered chips increase temperature cycling capability
future. All the devices may also be copacked with IXYS’
to 10,000 cycles at D100K. Due to the high-temperature
HiPerFRED fast diodes.
capabilities of TJ equals 175°C and TAMBIENT equals 135°C,
The combination of high switching speeds and low
one separate coolant loop can be omitted when using the
conduction losses gives power designers a new high value
module. PETech
www.powerelectronics.com
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Power Electronics Technology March 2008