FDD8782/FDU8782
N-Channel PowerTrench® MOSFET
25V, 35A, 11mΩ
General Description
Features
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
rDS(on) and fast switching speed.
„ Max rDS(on) = 11.0mΩ at VGS = 10V, ID = 35A
„ Max rDS(on) = 14.0mΩ at VGS = 4.5V, ID = 35A
„ Low gate charge: Qg(10) = 18nC(Typ), VGS = 10V
„ Low gate resistance
Application
„ Avalanche rated and 100% tested
„ RoHS Compliant
„ Vcore DC-DC for Desktop Computers and Servers
„ VRM for Intermediate Bus Architecture
D
G
D
I-PAK
G D S
(TO-251AA)
G
S
Short Lead I-PAK
S
MOSFET Maximum Ratings TC = 25°C unless otherwise noted
Symbol
VDS
Drain to Source Voltage
Parameter
Ratings
25
Units
V
VGS
Gate to Source Voltage
±20
V
Drain Current -Continuous (Package Limited)
35
ID
-Continuous (Die Limited)
54
-Pulsed
EAS
Single Pulse Avalanche Energy
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature
(Note 1)
(Note 2)
A
321
72
mJ
50
W
-55 to 175
°C
Thermal Characteristics
RθJC
Thermal Resistance, Junction to Case TO-252,TO-251
3.0
°C/W
RθJA
Thermal Resistance, Junction to Ambient TO-252,TO-251
100
°C/W
RθJA
Thermal Resistance, Junction to Ambient TO-252,1in2 copper pad area
52
°C/W
Package Marking and Ordering Information
Device Marking
FDD8782
Device
FDD8782
Package
TO-252AA
Reel Size
13’’
Tape Width
16mm
Quantity
2500 units
FDU8782
FDU8782
TO-251AA
N/A(Tube)
N/A
75 units
FDU8782
FDU8782_F071
TO-251AA
N/A(Tube)
N/A
75 units
©2009 Fairchild Semiconductor Corporation
FDD8782/FDU8782 Rev. 1.2
1
www.fairchildsemi.com
FDD8782/FDU8782 N-Channel PowerTrench® MOSFET
March 2015
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250μA, VGS = 0V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250μA, referenced to
25°C
IDSS
Zero Gate Voltage Drain Current
VDS = 20V,
VGS = 0V
IGSS
Gate to Source Leakage Current
VGS = ±20V
25
V
mV/°C
14.3
1
TJ = 150°C
250
μA
±100
nA
2.5
V
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250μA
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250μA, referenced to
25°C
rDS(on)
Drain to Source On Resistance
1.2
1.7
-6.5
mV/°C
VGS = 10V, ID = 35A
8.5
11.0
VGS = 4.5V, ID = 35A
11.0
14.0
VGS = 10V, ID = 35A
TJ = 175°C
12.1
18.0
920
1220
pF
230
310
pF
160
240
pF
mΩ
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate Resistance
VDS = 13V, VGS = 0V,
f = 1MHz
f = 1MHz
Ω
1.4
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg
Total Gate Charge
VGS = 0V to 10V
Qg
Total Gate Charge
VGS = 0V to 5V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller”Charge
VDD = 13V, ID = 35A
VGS = 10V, RGS = 9Ω
VDD = 13V
ID = 35A
Ig = 1.0mA
7
14
ns
9
18
ns
22
36
ns
14
25
ns
18
25
nC
9.4
13
nC
3.1
nC
4.0
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, IS = 35A
0.96
1.25
VGS = 0V, IS = 15A
0.86
1.2
IF = 35A, di/dt = 100A/μs
25
38
ns
IF = 35A, di/dt = 100A/μs
17
26
nC
V
Notes:
1: Pulse time < 300us,Duty cycle = 2%.
2: Starting TJ = 25oC, L = 1.0mH, IAS = 12A ,VDD = 23V, VGS = 10V.
FDD8782/FDU8782 Rev. 1.2
2
www.fairchildsemi.com
FDD8782/FDU8782 N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
VGS = 10V
ID, DRAIN CURRENT (A)
60
50
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
70
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
VGS = 4.5V
40
VGS = 3.5V
30
20
10
0
VGS = 3V
0
1
2
3
VDS, DRAIN TO SOURCE VOLTAGE (V)
4
VGS = 3V
5
4
VGS = 3.5V
3
2
VGS = 4.5V
1
0
VGS = 10V
0
10
20
30
40
50
ID, DRAIN CURRENT(A)
60
70
40
1.8
ID = 35A
VGS = 10V
1.6
1.4
1.2
1.0
0.8
0.6
-80
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
ID = 15A PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
30
20
TJ= 175oC
10
TJ = 25oC
0
200
Figure 3. Normalized On Resistance vs Junction
Temperature
2
4
6
8
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance vs Gate to Source
Voltage
100
IS, REVERSE DRAIN CURRENT (A)
70
ID, DRAIN CURRENT (A)
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
6
Figure 2. Normalized On-Resistance vs Drain
Current and Gate Voltage
rDS(on), ON-RESISTANCE (mΩ)
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
Figure 1. On Region Characteristics
7
PULSE DURATION = 80μs
DUTY CYCLE = 0.5%MAX
60
50
40
TJ
= 175oC
30
20
TJ = 25oC
10
= -55oC
TJ
0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
VGS, GATE TO SOURCE VOLTAGE (V)
4.5
Figure 5. Transfer Characteristics
FDD8782/FDU8782 Rev. 1.2
VGS = 0V
10
1
0.1
0.01
1E-3
0.0
TJ = 175oC
TJ = 25oC
TJ = -55oC
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Source to Drain Diode Forward
Voltage vs Source Current
3
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FDD8782/FDU8782 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
3000
f = 1MHz
VGS = 0V
VDD = 8V
8
CAPACITANCE (pF)
VGS, GATE TO SOURCE VOLTAGE(V)
10
VDD = 13V
6
VDD = 18V
4
2
0
0
5
10
15
20
1000
Crss
100
0.1
25
Qg, GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
60
ID, DRAIN CURRENT (A)
IAS, AVALANCHE CURRENT(A)
TJ = 25oC
TJ = 125oC
10
TJ = 150oC
1
0.001
0.01
0.1
1
10
50
40
30
VGS = 4.5V
20
o
RθJC = 3.0 C/W
10
0
25
100
VGS = 10V
50
75
tAV, TIME IN AVALANCHE(ms)
100
P(PK), PEAK TRANSIENT POWER (W)
10us
100
100us
10
LIMITED BY
PACKAGE
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(on)
1
1ms
SINGLE PULSE
TJ = MAX RATED
TC = 25oC
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
10ms
DC
50
175
TC = 25oC
VGS = 10V
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
1000
CURRENT AS FOLLOWS:
175 – T C
----------------------150
I = I25
100
SINGLE PULSE
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
t, PULSE WIDTH (s)
Figure 11. Forward Bias Safe Operating Area
FDD8782/FDU8782 Rev. 1.2
150
Figure 10. Maximum Continuous Drain Current vs
Case Temperature
7000
500
125
TC, CASE TEMPERATURE(oC)
Figure 9. Unclamped Inductive Switching
Capability
ID, DRAIN CURRENT (A)
30
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance vs Drain to Source Voltage
50
0.1
Ciss
Coss
Figure 12. Single Pulse Maximum Power
Dissipation
4
www.fairchildsemi.com
FDD8782/FDU8782 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
NORMALIZED THERMAL
IMPEDANCE, ZθJC
2
1
0.1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
0.01
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
SINGLE PULSE
1E-3
-5
10
-4
10
-3
-2
-1
10
10
10
t, RECTANGULAR PULSE DURATION(s)
0
10
1
10
Figure 13. Transient Thermal Response Curve
FDD8782/FDU8782 Rev. 1.2
5
www.fairchildsemi.com
FDD8782/FDU8782 N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted
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Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I77
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