MMICs -Radare auf -Basis MMICsfür fürKfz Kfz-Radare aufGaAs GaAs-Basis GMM GMMWorkshop Workshop München, München,23.06.2006 23.06.2006 UMS RESTRICTED All information contained in this document remains the sole and exclusive property of UNITED MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without the prior consent of UNITED MONOLITHIC SEMICONDUCTORS . 1 Ref: GaAs_for_Automotive_06_2006.ppt date: 23.06.2006 A Company of : EADS Deutschland GmbH THALES GaAs MMICs for Automotive Radars Overview I. Overview on Automotive RADAR environment II. RF Front End Architecture: Trends & Requirements III. Semiconductor Process Technologies IV. Consequences at MMICs level: Design trends & solutions V. Status & Examples: Existing Solutions VI. New Developments VII. Packaging solutions VIII. Conclusion United Monolithic Semiconductors UMS RESTRICTED All information contained in this document remains the sole and exclusive property of UNITED MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without the prior consent of UNITED MONOLITHIC SEMICONDUCTORS . 2 Ref: GaAs_for_Automotive_06_2006.ppt date: 23.06.2006 GaAs MMICs for Automotive Radars Overview I. Overview on Automotive RADAR environment II. RF Front End Architecture: Trends & Requirements III. Semiconductor Process Technologies IV. Consequences at MMICs level: Design trends & solutions V. Status & Examples: Existing Solutions VI. New Developments VII. Packaging solutions VIII. Conclusion United Monolithic Semiconductors UMS RESTRICTED All information contained in this document remains the sole and exclusive property of UNITED MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without the prior consent of UNITED MONOLITHIC SEMICONDUCTORS . 3 Ref: GaAs_for_Automotive_06_2006.ppt date: 23.06.2006 I - Overview on Automotive RADAR environment I.1 RADAR principles z Radar GaAs MMICs for Automotive Radars Emit an electromagnetic wave in a given direction and detect the reflected wave Usage of Micro-waves for the propagation Identification of a target Measure of the targets parameters F F t t FMCW FSK MOD MOD IF IF P t PULSED IF PULSE CONTROL United Monolithic Semiconductors UMS RESTRICTED All information contained in this document remains the sole and exclusive property of UNITED MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without the prior consent of UNITED MONOLITHIC SEMICONDUCTORS . 4 Ref: GaAs_for_Automotive_06_2006.ppt date: 23.06.2006 I - Overview on Automotive RADAR environment I.2 Dedicated bands vs function (1) GaAs MMICs for Automotive Radars 79/24 GHz 77 GHz z 1 to 200m range z Adaptive Cruise Control z collision warning z stop and go z collision avoidance z 0.1 to 10m range z parking aid z blind spot detection z pre-crash z cut-in detection z stop and go United Monolithic Semiconductors UMS RESTRICTED All information contained in this document remains the sole and exclusive property of UNITED MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without the prior consent of UNITED MONOLITHIC SEMICONDUCTORS . 5 Ref: GaAs_for_Automotive_06_2006.ppt date: 23.06.2006 I - Overview on Automotive RADAR environment I.2 Dedicated bands vs function (2) GaAs MMICs for Automotive Radars Customer Europe North America Asia z LRR @ 77GHz: Slow market penetration due to high millimetre wave frequencies involved and complex technologies z SRR @ 24GHz: Multiple units per car and mature frequency range z SRR @ 79GHz: Supposed to come, due to frequency allocation issues at 24GHz United Monolithic Semiconductors UMS RESTRICTED All information contained in this document remains the sole and exclusive property of UNITED MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without the prior consent of UNITED MONOLITHIC SEMICONDUCTORS . 6 Ref: GaAs_for_Automotive_06_2006.ppt date: 23.06.2006 I- Overview on Automotive RADAR environment I.3 Environmental requirements / Automotive constraints z Very high frequencies 76 – 77 GHz for Long Range Radar GaAs MMICs for Automotive Radars 23.75 – 24.5 GHz for current Short Range Radar (not allowed from 2013 in Europe) 77 – 81 GHz for next generation of Short Range Radar (allowed since January 2005) z Stringent environmental conditions Temperature stresses more and more restrictive Min. operating temperature : - 40 °C Max. operating temperature from + 70 °C to + 125 °C for the future sensors z Strong quality requirements Certifications Specific customer requirements z High Integration Level (small sensors) United Monolithic Semiconductors UMS RESTRICTED All information contained in this document remains the sole and exclusive property of UNITED MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without the prior consent of UNITED MONOLITHIC SEMICONDUCTORS . 7 Ref: GaAs_for_Automotive_06_2006.ppt date: 23.06.2006 GaAs MMICs for Automotive Radars I - Overview on Automotive RADAR environment I.4 Qualification requirements … as MMICs supplier (1) z Required certification: QS 9000, VDA 6.1 or ISO/TS16949 z Specific Tools and Processes to implement Process & Design FMEA (Failure Mode & Effect Analysis) PPAP (Production Part & Approval Process) … z No changes in the process and the product without prior customer approval / qualification z AEC100 Qualification United Monolithic Semiconductors UMS RESTRICTED All information contained in this document remains the sole and exclusive property of UNITED MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without the prior consent of UNITED MONOLITHIC SEMICONDUCTORS . 8 Ref: GaAs_for_Automotive_06_2006.ppt date: 23.06.2006 GaAs MMICs for Automotive Radars I - Overview on Automotive RADAR environment I.4 Qualification requirements … as MMICs supplier (2) z Goal: Zero Defects z PPM Requirement at all steps : z Incoming inspection Module Test Field returns } Typical requirement: 15 PPM to 0 PPM Meet Environmental requirements ISO14001 EC Directives WEEE (Waste Electrical and Electronic Equipment) RoHS (Restriction of Hazardous Substances) EoLV (End-of-Life Vehicle) United Monolithic Semiconductors UMS RESTRICTED All information contained in this document remains the sole and exclusive property of UNITED MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without the prior consent of UNITED MONOLITHIC SEMICONDUCTORS . 9 Ref: GaAs_for_Automotive_06_2006.ppt date: 23.06.2006 I - Overview about Automotive RADAR environment I.5 Economical requirements / customer constraints GaAs MMICs for Automotive Radars z z Economical requirements Cost reduction / Lower cost technologies Lead time reduction Performance improvement Impact at MMICs level / manufacturing Active devices fully controlled on-chip vs temperature and technology spreads (no tuning required) Several functions on one chip Easy assembly (packaged solutions) High yield technologies or technologies dedicated to high volume (6” GaAs or SiGe) United Monolithic Semiconductors UMS RESTRICTED All information contained in this document remains the sole and exclusive property of UNITED MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without the prior consent of UNITED MONOLITHIC SEMICONDUCTORS . 10 Ref: GaAs_for_Automotive_06_2006.ppt date: 23.06.2006 GaAs MMICs for Automotive Radars Overview I. Overview on Automotive RADAR environment II. RF Front End Architecture: Trends & Requirements III. Semiconductor Process Technologies IV. Consequences at MMICs level: Design trends & solutions V. Status & Examples: Existing Solutions VI. New Developments VII. Packaging solutions VIII. Conclusion United Monolithic Semiconductors UMS RESTRICTED All information contained in this document remains the sole and exclusive property of UNITED MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without the prior consent of UNITED MONOLITHIC SEMICONDUCTORS . 11 Ref: GaAs_for_Automotive_06_2006.ppt date: 23.06.2006 II - RF Front End Architecture: Trends & Requirements II.1 Basic RF Front End Architecture Puzzle to be built from basic blocks TX Frequency Generation GaAs MMICs for Automotive Radars xm TX xn ÷p MOD RX_1 RX_1 MOD FREQUENCY and / or MODULATION CONTROL RX_p RX_n Not the only solution! MOD United Monolithic Semiconductors UMS RESTRICTED All information contained in this document remains the sole and exclusive property of UNITED MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without the prior consent of UNITED MONOLITHIC SEMICONDUCTORS . 12 Ref: GaAs_for_Automotive_06_2006.ppt date: 23.06.2006 II - RF Front End Architecture: Trends & Requirements II.2 Main trends GaAs MMICs for Automotive Radars z Requirement: Increase the number of beams Consequence: Complexity of the RF Front End is increased Based on existing solution, multiplication of the chip and thus the interconnections at high frequencies Increased accuracy requirement at the chip assembly, Risk: Poor assembly yield Increase of cost due to difficulties at assembly level Solution: Change the approach at MMICs level Decrease the number of chips by combining functions on one chip Adapt the internal frequency plan Decrease the number of interconnections at high frequencies United Monolithic Semiconductors UMS RESTRICTED All information contained in this document remains the sole and exclusive property of UNITED MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without the prior consent of UNITED MONOLITHIC SEMICONDUCTORS . 13 Ref: GaAs_for_Automotive_06_2006.ppt date: 23.06.2006 II - RF Front End Architecture: Trends & Requirements II.4 Key performance (1) Noise contributions to NF: Main limitations TX signal - AM noise - FM noise GaAs MMICs for Automotive Radars LO signal - AM noise - FM noise LEAKAGE - decoupling - time delay IF NOISE - LO/AM demodulation - TX/Leakage AM and FM noise demodulation - Mixer 1/f noise United Monolithic Semiconductors UMS RESTRICTED All information contained in this document remains the sole and exclusive property of UNITED MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without the prior consent of UNITED MONOLITHIC SEMICONDUCTORS . 14 Ref: GaAs_for_Automotive_06_2006.ppt date: 23.06.2006 II - RF Front End Architecture: Trends & Requirements II.4 Key performance (2) Sensor Sensitivity P/NF GaAs MMICs for Automotive Radars F t MOD IF P NF IF spectrum IF noise floor IF signals = f(RCS, D, Gc, P) Distance United Monolithic Semiconductors UMS RESTRICTED All information contained in this document remains the sole and exclusive property of UNITED MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without the prior consent of UNITED MONOLITHIC SEMICONDUCTORS . 15 Ref: GaAs_for_Automotive_06_2006.ppt date: 23.06.2006 II - RF Front End Architecture: Trends & Requirements II.4 Key performance (3) GaAs MMICs for Automotive Radars Sensitivity impact at detection level United Monolithic Semiconductors UMS RESTRICTED All information contained in this document remains the sole and exclusive property of UNITED MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without the prior consent of UNITED MONOLITHIC SEMICONDUCTORS . 16 Ref: GaAs_for_Automotive_06_2006.ppt date: 23.06.2006 II - RF Front End Architecture: Trends & Requirements II.4 Key performance (4) Phase noise / PM Noise Limitation GaAs MMICs for Automotive Radars RCS_T1 >> RCS_T2 F T2 t τ MOD T1 IF IF spectrum Long delay (τ) => Phase noise de-modulation Distance United Monolithic Semiconductors UMS RESTRICTED All information contained in this document remains the sole and exclusive property of UNITED MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without the prior consent of UNITED MONOLITHIC SEMICONDUCTORS . 17 Ref: GaAs_for_Automotive_06_2006.ppt date: 23.06.2006 II - RF Front End Architecture: Trends & Requirements II.4 Key performance (5) Inter modulation GaAs MMICs for Automotive Radars High RCS / Close Distance F t MOD IF IF spectrum False target Distance United Monolithic Semiconductors UMS RESTRICTED All information contained in this document remains the sole and exclusive property of UNITED MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without the prior consent of UNITED MONOLITHIC SEMICONDUCTORS . 18 Ref: GaAs_for_Automotive_06_2006.ppt date: 23.06.2006 II - RF Front End Architecture: Trends & Requirements II.4 Key performance (6) MMICs main electrical requirements GaAs MMICs for Automotive Radars z z Output Power for 77 GHz radar: 13 to 17 dBm for 24 GHz radar: up to 14 dBm Noise Figure for 77 GHz radar: 6 to 20dB for 24 GHz radar: 3 to 6dB z Tuning Range: z Phase Noise - 40°C to + 125°C 10 to 600MHz for 77 GHz radar: -80 to -90 dBc/Hz @ 100 kHz for 24 GHz radar: -90 to -100 dBc/Hz @ 100 kHz United Monolithic Semiconductors UMS RESTRICTED All information contained in this document remains the sole and exclusive property of UNITED MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without the prior consent of UNITED MONOLITHIC SEMICONDUCTORS . 19 Ref: GaAs_for_Automotive_06_2006.ppt date: 23.06.2006 GaAs MMICs for Automotive Radars Overview I. Overview on Automotive RADAR environment II. RF Front End Architecture: Trends & Requirements III. Semiconductor Process Technologies IV. Consequences at MMICs level: Design trends & solutions V. Status & Examples: Existing Solutions VI. New Developments VII. Packaging solutions VIII. Conclusion United Monolithic Semiconductors UMS RESTRICTED All information contained in this document remains the sole and exclusive property of UNITED MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without the prior consent of UNITED MONOLITHIC SEMICONDUCTORS . 20 Ref: GaAs_for_Automotive_06_2006.ppt date: 23.06.2006 III - Semiconductor Process Technologies III.1 Technology choice: Main characteristics GaAs technologies P-HEMT GaAs MMICs for Automotive Radars HBT Very low LF noise High gain High density Varactor diode High quality passive devices High Power Very low NF Very high Fmax PIN Diode Low LF noise Very high cut-off frequency * High Quality Schottky Diode HQSD* High Power High cut-off frequency United Monolithic Semiconductors UMS RESTRICTED All information contained in this document remains the sole and exclusive property of UNITED MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without the prior consent of UNITED MONOLITHIC SEMICONDUCTORS . 21 Ref: GaAs_for_Automotive_06_2006.ppt date: 23.06.2006 III - Semiconductor Process Technologies III.2 Technology choice: Design possibilities GaAs technologies P-HEMT GaAs MMICs for Automotive Radars HBT Low LF noise mixers @ 24GHz VCOs LNAs TXs @ 77GHz Mixers TXs @ 24GHz Multipliers Prescalers Switches Low LF noise mixers @ 77GHz * High Quality Schottky Diode PIN Diode HQSD* United Monolithic Semiconductors UMS RESTRICTED All information contained in this document remains the sole and exclusive property of UNITED MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without the prior consent of UNITED MONOLITHIC SEMICONDUCTORS . 22 Ref: GaAs_for_Automotive_06_2006.ppt date: 23.06.2006 GaAs MMICs for Automotive Radars Overview I. Overview on Automotive RADAR environment II. RF Front End Architecture: Trends & Requirements III. Semiconductor Process Technologies IV. Consequences at MMICs level: Design trends & solutions V. Status & Examples: Existing Solutions VI. New Developments VII. Packaging solutions VIII. Conclusion United Monolithic Semiconductors UMS RESTRICTED All information contained in this document remains the sole and exclusive property of UNITED MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without the prior consent of UNITED MONOLITHIC SEMICONDUCTORS . 23 Ref: GaAs_for_Automotive_06_2006.ppt date: 23.06.2006 GaAs MMICs for Automotive Radars Overview I. Overview on Automotive RADAR environment II. RF Front End Architecture: Trends & Requirements III. Semiconductor Process Technologies IV. Consequences at MMICs level: Design trends & solutions IV.1 Frequency Generation : VCO IV.2 Power Amplifier & Multiplier : TX IV.3 RX IV.4 Interconnections V. Status & Examples: Existing Solutions VI. New Developments VII. Packaging solutions VIII. Conclusion United Monolithic Semiconductors UMS RESTRICTED All information contained in this document remains the sole and exclusive property of UNITED MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without the prior consent of UNITED MONOLITHIC SEMICONDUCTORS . 24 Ref: GaAs_for_Automotive_06_2006.ppt date: 23.06.2006 IV - Consequences at MMICs level: Design trends & solutions IV.1 Frequency Generation: VCO (1) z Design trends : Sub Harmonic Voltage Controlled Oscillator GaAs MMICs for Automotive Radars z z Fully integrated low phase noise VCO with self biased active devices Advantages Free running oscillation operating at low frequency On chip resonator Tuning-less chip Requirements Low noise technology: HBT Varactor diode: use of C(V) of Base-Collector diode Passive devices with high Q Accurate non linear models for active devices with associated noise model (essentially the low LF noise) in the operating temperature range United Monolithic Semiconductors UMS RESTRICTED All information contained in this document remains the sole and exclusive property of UNITED MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without the prior consent of UNITED MONOLITHIC SEMICONDUCTORS . 25 Ref: GaAs_for_Automotive_06_2006.ppt date: 23.06.2006 GaAs MMICs for Automotive Radars Overview I. Overview on Automotive RADAR environment II. RF Front End Architecture: Trends & Requirements III. Semiconductor Process Technologies IV. Consequences at MMICs level: Design trends & solutions IV.1 Frequency Generation : VCO IV.2 Power Amplifier & Multiplier : TX IV.3 RX IV.4 Interconnections V. Status & Examples: Existing Solutions VI. New Developments VII. Packaging solutions VIII. Conclusion United Monolithic Semiconductors UMS RESTRICTED All information contained in this document remains the sole and exclusive property of UNITED MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without the prior consent of UNITED MONOLITHIC SEMICONDUCTORS . 26 Ref: GaAs_for_Automotive_06_2006.ppt date: 23.06.2006 IV - Consequences at MMICs level: Design trends & solutions IV.2 Power Amplifier & Multiplier: TX (1) GaAs MMICs for Automotive Radars z z z Design Trends : Multiplier + Amplifier (at 77 GHz) Active multiplier at sub harmonic frequency and High Power Amplifier Self biased active devices Target Low level of AM noise amplified Distributed circuit suitable for high frequency Good rejection of harmonics thanks to distributed filters on chip Requirements Technology : P-HEMT 0.15 µm for high power density at high frequency Accurate non linear models for active devices at all harmonic frequencies in the operating temperature range United Monolithic Semiconductors UMS RESTRICTED All information contained in this document remains the sole and exclusive property of UNITED MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without the prior consent of UNITED MONOLITHIC SEMICONDUCTORS . 27 Ref: GaAs_for_Automotive_06_2006.ppt date: 23.06.2006 GaAs MMICs for Automotive Radars Overview I. Overview on Automotive RADAR environment II. RF Front End Architecture: Trends & Requirements III. Semiconductor Process Technologies IV. Consequences at MMICs level: Design trends & solutions IV.1 Frequency Generation : VCO IV.2 Power Amplifier & Multiplier : TX IV.3 RX IV.4 Interconnections V. Status & Examples: Existing Solutions VI. New Developments VII. Packaging solutions VIII. Conclusion United Monolithic Semiconductors UMS RESTRICTED All information contained in this document remains the sole and exclusive property of UNITED MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without the prior consent of UNITED MONOLITHIC SEMICONDUCTORS . 28 Ref: GaAs_for_Automotive_06_2006.ppt date: 23.06.2006 IV - Consequences at MMICs level: Design trends & solutions IV.3 RX (1) GaAs MMICs for Automotive Radars The Choice of the technology depends on the performance to be reached: Diode based Mixers are suitable for low LF noise and high frequency. At 24 GHz mixers based on cold FET can also be used for higher integration level. z Design trends: Multibeam / Sub-Harmonic Diode based Mixer z Advantages: z Allow to use an oscillator at a frequency lower than the operating frequency Intrinsic suppression (due to anti-parallel diode) of all the m.fLO + n.fIF for even (m+n) Good isolation LO/IF and LO/RF thanks to passive device (LO short circuit stub at RF/IF port) Not excessive LO power level to reach optimal conversion losses No biasing network (Zero DC consumption) Simplicity of the integration (at layout level) Limits: Low linearity Limited operating bandwidth (about 10%) due to input / output quarter wavelength stubs United Monolithic Semiconductors UMS RESTRICTED All information contained in this document remains the sole and exclusive property of UNITED MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without the prior consent of UNITED MONOLITHIC SEMICONDUCTORS . 29 Ref: GaAs_for_Automotive_06_2006.ppt date: 23.06.2006 GaAs MMICs for Automotive Radars Overview I. Overview on Automotive RADAR environment II. RF Front End Architecture: Trends & Requirements III. Semiconductor Process Technologies IV. Consequences at MMICs level: Design trends & solutions IV.1 Frequency Generation : VCO IV.2 Power Amplifier & Multiplier : TX IV.3 RX IV.4 Interconnections V. Status & Examples: Existing Solutions VI. New Developments VII. Packaging solutions VIII. Conclusion United Monolithic Semiconductors UMS RESTRICTED All information contained in this document remains the sole and exclusive property of UNITED MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without the prior consent of UNITED MONOLITHIC SEMICONDUCTORS . 30 Ref: GaAs_for_Automotive_06_2006.ppt date: 23.06.2006 IV - Consequences at MMICs level: Design trends & solutions IV.4 Interconnections (1) GaAs MMICs for Automotive Radars Interconnections z Objective: Fully compatible with automatic equipment for Pick and Place and Connections z Wire Bonding z Used in production up to 77 GHz MMIC to MMIC and MMIC to external substrates are considered Bumps: Flip Chip or “Hot Vias” z Less transition discontinuity but many other problems Trend: Packaging Solutions Transitions have to be modelled and introduced in the design United Monolithic Semiconductors UMS RESTRICTED All information contained in this document remains the sole and exclusive property of UNITED MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without the prior consent of UNITED MONOLITHIC SEMICONDUCTORS . 31 Ref: GaAs_for_Automotive_06_2006.ppt date: 23.06.2006 IV - Consequences at MMICs level: Design trends & solutions IV.4 Interconnections (2) Interconnection example @ 77GHz : Wire / Ribbon bonding GaAs MMICs for Automotive Radars z Usually EXTERNAL SUBSTRATE MMIC Gold Wire bonding Ø 25 µm Gold Ribbon W = 25 µm, T = 12,5 µm TRANSITION EXTERNAL SUBSTRATE MMIC MMIC circuit including matching of a part of the transition Bonding pad cell of the MMIC Bonding pad cell on the external substrate Matching network on the external substrate OUT (50 Ohm) 50 Ohm interface Flexibility in order to connect either MMICS to MMICs or MMICs to external substrate Distributed matching to have a wider band United Monolithic Semiconductors UMS RESTRICTED All information contained in this document remains the sole and exclusive property of UNITED MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without the prior consent of UNITED MONOLITHIC SEMICONDUCTORS . 32 Ref: GaAs_for_Automotive_06_2006.ppt date: 23.06.2006 IV - Consequences at MMICs level: Design trends & solutions IV.4 Interconnections (3) Interconnection example @ 77GHz : Flip Chip GaAs MMICs for Automotive Radars Bumps Foot prints on the front side of the chip Substrates Coplanar MPA @ 77 GHz Coplanar VCO @ 77 GHz Issues Parasitic mode Thermal management is mandatory Assembly Quality of the substrate Detuning United Monolithic Semiconductors UMS RESTRICTED All information contained in this document remains the sole and exclusive property of UNITED MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without the prior consent of UNITED MONOLITHIC SEMICONDUCTORS . 33 Ref: GaAs_for_Automotive_06_2006.ppt date: 23.06.2006 IV - Consequences at MMICs level: Design trends & solutions IV.4 Interconnections (4) Interconnection example @ 77GHz : Hot Via MS on chip GaAs MMICs for Automotive Radars BCB-cover prober openings via chip compensation bumps chip backside metalization CPW motherboard metal case United Monolithic Semiconductors UMS RESTRICTED All information contained in this document remains the sole and exclusive property of UNITED MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without the prior consent of UNITED MONOLITHIC SEMICONDUCTORS . 34 Ref: GaAs_for_Automotive_06_2006.ppt date: 23.06.2006 GaAs MMICs for Automotive Radars Overview I. Overview on Automotive RADAR environment II. RF Front End Architecture: Trends & Requirements III. Semiconductor Process Technologies IV. Consequences at MMICs level: Design trends & solutions V. Status & Examples: Existing Solutions VI. New Developments VII. Packaging solutions VIII. Conclusion United Monolithic Semiconductors UMS RESTRICTED All information contained in this document remains the sole and exclusive property of UNITED MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without the prior consent of UNITED MONOLITHIC SEMICONDUCTORS . 35 Ref: GaAs_for_Automotive_06_2006.ppt date: 23.06.2006 VI. New Developments VI.1 Improved solutions for 77 GHz LRR (1) GaAs MMICs for Automotive Radars 12.75GHz VCO 76.5GHz Tx Key features: -40°C to +125°C chip temperature range Optimized cost / performances source architecture Optimized Rx architecture to simplify the RF module Simple bias / assembly oriented Chip protection layer (BCB / SiNx) 76.5GHz Rx up to 2 SCTx_Rx can be driven with a single Tx United Monolithic Semiconductors UMS RESTRICTED All information contained in this document remains the sole and exclusive property of UNITED MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without the prior consent of UNITED MONOLITHIC SEMICONDUCTORS . 36 Ref: GaAs_for_Automotive_06_2006.ppt date: 23.06.2006 GaAs MMICs for Automotive Radars Overview I. Overview on Automotive RADAR environment II. RF Front End Architecture: Trends & Requirements III. Semiconductor Process Technologies IV. Consequences at MMICs level: Design trends & solutions V. Status & Examples: Existing Solutions VI. New Developments VII. Packaging solutions VIII. Conclusion United Monolithic Semiconductors UMS RESTRICTED All information contained in this document remains the sole and exclusive property of UNITED MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without the prior consent of UNITED MONOLITHIC SEMICONDUCTORS . 37 Ref: GaAs_for_Automotive_06_2006.ppt date: 23.06.2006 VII. Packaging solutions VII.1 One Solution for SRR : Plastic packages (1) GaAs MMICs for Automotive Radars mm-waver Low Noise Amplifier in Plastic Package MMIC QFN (Quad Flat No lead package) United Monolithic Semiconductors UMS RESTRICTED All information contained in this document remains the sole and exclusive property of UNITED MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without the prior consent of UNITED MONOLITHIC SEMICONDUCTORS . 38 Ref: GaAs_for_Automotive_06_2006.ppt date: 23.06.2006 GaAs MMICs for Automotive Radars VII. Packaging solutions VII.2 Solution for LRR: 77 GHz Wave Guide Package (1) metal lid ceramic / laminate MMIC ceramic / laminate metal base PCB Wave Guide United Monolithic Semiconductors UMS RESTRICTED All information contained in this document remains the sole and exclusive property of UNITED MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without the prior consent of UNITED MONOLITHIC SEMICONDUCTORS . 39 Ref: GaAs_for_Automotive_06_2006.ppt date: 23.06.2006 GaAs MMICs for Automotive Radars VII. Packaging solutions VII.3 Additional Packaging Issues z Dedicated chip to a given standard package for SRR z Custom package for high frequency LRR z Necessity to take into account the package impact during the circuit simulation: RF connections, package grounded inductance, … z Frequency limitation for plastic packages: up to 30 GHz z Performance limitation: Instability risk, isolation degradation, … z Dedicated tooling for measurements z Not available on the market for high frequency. To be developed Thermal management at MMIC level United Monolithic Semiconductors UMS RESTRICTED All information contained in this document remains the sole and exclusive property of UNITED MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without the prior consent of UNITED MONOLITHIC SEMICONDUCTORS . 40 Ref: GaAs_for_Automotive_06_2006.ppt date: 23.06.2006 GaAs MMICs for Automotive Radars Overview I. Overview on Automotive RADAR environment II. RF Front End Architecture: Trends & Requirements III. Semiconductor Process Technologies IV. Consequences at MMICs level: Design trends & solutions V. Status & Examples: Existing Solutions VI. New Developments VII. Packaging solutions VIII. Conclusion United Monolithic Semiconductors UMS RESTRICTED All information contained in this document remains the sole and exclusive property of UNITED MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without the prior consent of UNITED MONOLITHIC SEMICONDUCTORS . 41 Ref: GaAs_for_Automotive_06_2006.ppt date: 23.06.2006 VIII. Conclusion (1) MMIC: Proven Capabilities z Functions GaAs MMICs for Automotive Radars z High level of Integration z z on-chip self biasing leading to fixed supply voltage Compatible to Automatic Assembly z 2 to 3 chips @ 24 GHz (4 to 7 mm²) 3 chips @ 77 GHz for 3 beams (12 mm²) less than 30 mm² for 8 beams system Tuning-less SOLUTIONS z All RF functions can be done on GaAs MMICs Frequency generation / TX / RX wire bonding based inter-connection already in production Packaging @ 24 GHz Packaging @ 77 GHz United Monolithic Semiconductors UMS RESTRICTED All information contained in this document remains the sole and exclusive property of UNITED MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without the prior consent of UNITED MONOLITHIC SEMICONDUCTORS . 42 Ref: GaAs_for_Automotive_06_2006.ppt date: 23.06.2006 VIII. Conclusion (2) MMIC: Future Activities z z GaAs MMICs for Automotive Radars z Improvement of Integration Low Cost Packaging Improvements on Production Capability z Radar Front-End Architecture Improvements z Simplify assembly Tuning-less Reproducibility Stability and reliability at automotive operating requirements Cost reduction with the best combination of design and process Frequency generation / LO distribution Measurement tools for production at 24 GHz and 77 GHz United Monolithic Semiconductors UMS RESTRICTED All information contained in this document remains the sole and exclusive property of UNITED MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without the prior consent of UNITED MONOLITHIC SEMICONDUCTORS . 43 Ref: GaAs_for_Automotive_06_2006.ppt date: 23.06.2006