MMICs
-Radare auf
-Basis
MMICsfür
fürKfz
Kfz-Radare
aufGaAs
GaAs-Basis
GMM
GMMWorkshop
Workshop
München,
München,23.06.2006
23.06.2006
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of UNITED MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the
recipient to third party without the prior consent of UNITED MONOLITHIC
SEMICONDUCTORS
.
1
Ref: GaAs_for_Automotive_06_2006.ppt
date: 23.06.2006
A Company of :
EADS Deutschland GmbH
THALES
GaAs MMICs for Automotive Radars
Overview
I.
Overview on Automotive RADAR environment
II.
RF Front End Architecture: Trends & Requirements
III.
Semiconductor Process Technologies
IV.
Consequences at MMICs level: Design trends & solutions
V.
Status & Examples: Existing Solutions
VI.
New Developments
VII. Packaging solutions
VIII. Conclusion
United Monolithic Semiconductors
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MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without
the prior consent of UNITED MONOLITHIC SEMICONDUCTORS .
2
Ref: GaAs_for_Automotive_06_2006.ppt
date: 23.06.2006
GaAs MMICs for Automotive Radars
Overview
I.
Overview on Automotive RADAR environment
II.
RF Front End Architecture: Trends & Requirements
III.
Semiconductor Process Technologies
IV.
Consequences at MMICs level: Design trends & solutions
V.
Status & Examples: Existing Solutions
VI.
New Developments
VII. Packaging solutions
VIII. Conclusion
United Monolithic Semiconductors
UMS RESTRICTED
All information contained in this document remains the sole and exclusive property of UNITED
MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without
the prior consent of UNITED MONOLITHIC SEMICONDUCTORS .
3
Ref: GaAs_for_Automotive_06_2006.ppt
date: 23.06.2006
I - Overview on Automotive RADAR environment
I.1 RADAR principles
z Radar
„
„
GaAs MMICs for Automotive Radars
„
„
Emit an electromagnetic wave in a given direction and detect the reflected wave
Usage of Micro-waves for the propagation
Identification of a target
Measure of the targets parameters
F
F
t
t
FMCW
FSK
MOD
MOD
IF
IF
P
t
PULSED
IF
PULSE CONTROL
United Monolithic Semiconductors
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4
Ref: GaAs_for_Automotive_06_2006.ppt
date: 23.06.2006
I - Overview on Automotive RADAR environment
I.2 Dedicated bands vs function (1)
GaAs MMICs for Automotive Radars
79/24 GHz
77 GHz
z 1 to 200m range
z Adaptive Cruise Control
z collision warning
z stop and go
z collision avoidance
z 0.1 to 10m range
z parking aid
z blind spot detection
z pre-crash
z cut-in detection
z stop and go
United Monolithic Semiconductors
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the prior consent of UNITED MONOLITHIC SEMICONDUCTORS .
5
Ref: GaAs_for_Automotive_06_2006.ppt
date: 23.06.2006
I - Overview on Automotive RADAR environment
I.2 Dedicated bands vs function (2)
GaAs MMICs for Automotive Radars
Customer
Europe
North America
Asia
z LRR @ 77GHz: Slow market penetration due to high millimetre wave frequencies
involved and complex technologies
z SRR @ 24GHz: Multiple units per car and mature frequency range
z SRR @ 79GHz: Supposed to come, due to frequency allocation issues at 24GHz
United Monolithic Semiconductors
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6
Ref: GaAs_for_Automotive_06_2006.ppt
date: 23.06.2006
I- Overview on Automotive RADAR environment
I.3 Environmental requirements / Automotive constraints
z
Very high frequencies
„ 76 – 77 GHz for Long Range Radar
GaAs MMICs for Automotive Radars
„ 23.75 – 24.5 GHz for current Short Range Radar (not allowed from 2013 in Europe)
„ 77 – 81 GHz for next generation of Short Range Radar (allowed since January 2005)
z
Stringent environmental conditions
„ Temperature stresses more and more restrictive
„ Min. operating temperature : - 40 °C
„ Max. operating temperature from + 70 °C to + 125 °C for the future sensors
z
Strong quality requirements
„ Certifications
„ Specific customer requirements
z
High Integration Level (small sensors)
United Monolithic Semiconductors
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the prior consent of UNITED MONOLITHIC SEMICONDUCTORS .
7
Ref: GaAs_for_Automotive_06_2006.ppt
date: 23.06.2006
GaAs MMICs for Automotive Radars
I - Overview on Automotive RADAR environment
I.4 Qualification requirements … as MMICs supplier (1)
z
Required certification: QS 9000, VDA 6.1 or ISO/TS16949
z
Specific Tools and Processes to implement
„
Process & Design FMEA (Failure Mode & Effect Analysis)
„
PPAP (Production Part & Approval Process)
„
…
z
No changes in the process and the product without prior customer
approval / qualification
z
AEC100 Qualification
United Monolithic Semiconductors
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MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without
the prior consent of UNITED MONOLITHIC SEMICONDUCTORS .
8
Ref: GaAs_for_Automotive_06_2006.ppt
date: 23.06.2006
GaAs MMICs for Automotive Radars
I - Overview on Automotive RADAR environment
I.4 Qualification requirements … as MMICs supplier (2)
z
Goal: Zero Defects
z
PPM Requirement at all steps :
z
„
Incoming inspection
„
Module Test
„
Field returns
}
Typical requirement:
15 PPM to 0 PPM
Meet Environmental requirements
„
ISO14001
„
EC Directives
„
WEEE (Waste Electrical and Electronic Equipment)
„
RoHS (Restriction of Hazardous Substances)
„
EoLV (End-of-Life Vehicle)
United Monolithic Semiconductors
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MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without
the prior consent of UNITED MONOLITHIC SEMICONDUCTORS .
9
Ref: GaAs_for_Automotive_06_2006.ppt
date: 23.06.2006
I - Overview about Automotive RADAR environment
I.5 Economical requirements / customer constraints
GaAs MMICs for Automotive Radars
z
z
Economical requirements
„
Cost reduction / Lower cost technologies
„
Lead time reduction
„
Performance improvement
Impact at MMICs level / manufacturing
„
Active devices fully controlled on-chip vs temperature and technology
spreads (no tuning required)
„
Several functions on one chip
„
Easy assembly (packaged solutions)
„
High yield technologies or
technologies dedicated to high volume (6” GaAs or SiGe)
United Monolithic Semiconductors
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MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without
the prior consent of UNITED MONOLITHIC SEMICONDUCTORS .
10
Ref: GaAs_for_Automotive_06_2006.ppt
date: 23.06.2006
GaAs MMICs for Automotive Radars
Overview
I.
Overview on Automotive RADAR environment
II.
RF Front End Architecture: Trends & Requirements
III.
Semiconductor Process Technologies
IV.
Consequences at MMICs level: Design trends & solutions
V.
Status & Examples: Existing Solutions
VI.
New Developments
VII. Packaging solutions
VIII. Conclusion
United Monolithic Semiconductors
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MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without
the prior consent of UNITED MONOLITHIC SEMICONDUCTORS .
11
Ref: GaAs_for_Automotive_06_2006.ppt
date: 23.06.2006
II - RF Front End Architecture: Trends & Requirements
II.1 Basic RF Front End Architecture
Puzzle to be built from basic blocks
TX
Frequency Generation
GaAs MMICs for Automotive Radars
xm
TX
xn
÷p
MOD
RX_1
RX_1
MOD
FREQUENCY and / or
MODULATION
CONTROL
RX_p
RX_n
Not the only solution!
MOD
United Monolithic Semiconductors
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12
Ref: GaAs_for_Automotive_06_2006.ppt
date: 23.06.2006
II - RF Front End Architecture: Trends & Requirements
II.2 Main trends
GaAs MMICs for Automotive Radars
z
Requirement: Increase the number of beams
„
Consequence:
Complexity of the RF Front End is increased
Based on existing solution, multiplication of the chip and thus the
interconnections at high frequencies
Increased accuracy requirement at the chip assembly,
Risk: Poor assembly yield
Increase of cost due to difficulties at assembly level
„
Solution: Change the approach at MMICs level
Decrease the number of chips by combining functions on one chip
Adapt the internal frequency plan
Decrease the number of interconnections at high frequencies
United Monolithic Semiconductors
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the prior consent of UNITED MONOLITHIC SEMICONDUCTORS .
13
Ref: GaAs_for_Automotive_06_2006.ppt
date: 23.06.2006
II - RF Front End Architecture: Trends & Requirements
II.4 Key performance (1)
Noise contributions to NF: Main limitations
TX signal
- AM noise
- FM noise
GaAs MMICs for Automotive Radars
LO signal
- AM noise
- FM noise
LEAKAGE
- decoupling
- time delay
IF NOISE
- LO/AM demodulation
- TX/Leakage AM and FM noise demodulation
- Mixer 1/f noise
United Monolithic Semiconductors
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14
Ref: GaAs_for_Automotive_06_2006.ppt
date: 23.06.2006
II - RF Front End Architecture: Trends & Requirements
II.4 Key performance (2)
Sensor Sensitivity
P/NF
GaAs MMICs for Automotive Radars
F
t
MOD
IF
P
NF
IF spectrum
IF noise floor
IF signals = f(RCS, D, Gc, P)
Distance
United Monolithic Semiconductors
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15
Ref: GaAs_for_Automotive_06_2006.ppt
date: 23.06.2006
II - RF Front End Architecture: Trends & Requirements
II.4 Key performance (3)
GaAs MMICs for Automotive Radars
Sensitivity impact at detection level
United Monolithic Semiconductors
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16
Ref: GaAs_for_Automotive_06_2006.ppt
date: 23.06.2006
II - RF Front End Architecture: Trends & Requirements
II.4 Key performance (4)
Phase noise / PM Noise Limitation
GaAs MMICs for Automotive Radars
RCS_T1 >> RCS_T2
F
T2
t
τ
MOD
T1
IF
IF spectrum
Long delay (τ)
=> Phase noise de-modulation
Distance
United Monolithic Semiconductors
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17
Ref: GaAs_for_Automotive_06_2006.ppt
date: 23.06.2006
II - RF Front End Architecture: Trends & Requirements
II.4 Key performance (5)
Inter modulation
GaAs MMICs for Automotive Radars
High RCS / Close Distance
F
t
MOD
IF
IF spectrum
False
target
Distance
United Monolithic Semiconductors
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18
Ref: GaAs_for_Automotive_06_2006.ppt
date: 23.06.2006
II - RF Front End Architecture: Trends & Requirements
II.4 Key performance (6)
MMICs main electrical requirements
GaAs MMICs for Automotive Radars
z
z
Output Power
„
for 77 GHz radar:
13 to 17 dBm
„
for 24 GHz radar:
up to 14 dBm
Noise Figure
„
for 77 GHz radar:
6 to 20dB
„
for 24 GHz radar:
3 to 6dB
z
Tuning Range:
z
Phase Noise
- 40°C to + 125°C
10 to 600MHz
„
for 77 GHz radar:
-80 to -90 dBc/Hz @ 100 kHz
„
for 24 GHz radar:
-90 to -100 dBc/Hz @ 100 kHz
United Monolithic Semiconductors
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MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without
the prior consent of UNITED MONOLITHIC SEMICONDUCTORS .
19
Ref: GaAs_for_Automotive_06_2006.ppt
date: 23.06.2006
GaAs MMICs for Automotive Radars
Overview
I.
Overview on Automotive RADAR environment
II.
RF Front End Architecture: Trends & Requirements
III.
Semiconductor Process Technologies
IV.
Consequences at MMICs level: Design trends & solutions
V.
Status & Examples: Existing Solutions
VI.
New Developments
VII. Packaging solutions
VIII. Conclusion
United Monolithic Semiconductors
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MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without
the prior consent of UNITED MONOLITHIC SEMICONDUCTORS .
20
Ref: GaAs_for_Automotive_06_2006.ppt
date: 23.06.2006
III - Semiconductor Process Technologies
III.1 Technology choice: Main characteristics
GaAs technologies
P-HEMT
GaAs MMICs for Automotive Radars
HBT
Very low LF noise
High gain
High density
Varactor diode
High quality
passive
devices
High Power
Very low NF
Very high Fmax
PIN Diode
Low LF noise
Very high cut-off frequency
* High Quality Schottky Diode
HQSD*
High Power
High cut-off
frequency
United Monolithic Semiconductors
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21
Ref: GaAs_for_Automotive_06_2006.ppt
date: 23.06.2006
III - Semiconductor Process Technologies
III.2 Technology choice: Design possibilities
GaAs technologies
P-HEMT
GaAs MMICs for Automotive Radars
HBT
Low LF noise mixers
@ 24GHz
VCOs
LNAs
TXs
@ 77GHz
Mixers
TXs @ 24GHz
Multipliers
Prescalers
Switches
Low LF noise mixers @ 77GHz
* High Quality Schottky Diode
PIN Diode
HQSD*
United Monolithic Semiconductors
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the prior consent of UNITED MONOLITHIC SEMICONDUCTORS .
22
Ref: GaAs_for_Automotive_06_2006.ppt
date: 23.06.2006
GaAs MMICs for Automotive Radars
Overview
I.
Overview on Automotive RADAR environment
II.
RF Front End Architecture: Trends & Requirements
III.
Semiconductor Process Technologies
IV.
Consequences at MMICs level: Design trends & solutions
V.
Status & Examples: Existing Solutions
VI.
New Developments
VII. Packaging solutions
VIII. Conclusion
United Monolithic Semiconductors
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MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without
the prior consent of UNITED MONOLITHIC SEMICONDUCTORS .
23
Ref: GaAs_for_Automotive_06_2006.ppt
date: 23.06.2006
GaAs MMICs for Automotive Radars
Overview
I.
Overview on Automotive RADAR environment
II.
RF Front End Architecture: Trends & Requirements
III.
Semiconductor Process Technologies
IV.
Consequences at MMICs level: Design trends & solutions
IV.1 Frequency Generation : VCO
IV.2 Power Amplifier & Multiplier : TX
IV.3 RX
IV.4 Interconnections
V.
Status & Examples: Existing Solutions
VI.
New Developments
VII. Packaging solutions
VIII. Conclusion
United Monolithic Semiconductors
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24
Ref: GaAs_for_Automotive_06_2006.ppt
date: 23.06.2006
IV - Consequences at MMICs level: Design trends & solutions
IV.1 Frequency Generation: VCO (1)
z
Design trends : Sub Harmonic Voltage Controlled Oscillator
„
GaAs MMICs for Automotive Radars
z
z
Fully integrated low phase noise VCO with self biased active devices
Advantages
„
Free running oscillation operating at low frequency
„
On chip resonator
„
Tuning-less chip
Requirements
„
Low noise technology: HBT
„
Varactor diode: use of C(V) of Base-Collector diode
„
Passive devices with high Q
„
Accurate non linear models for active devices with associated noise model
(essentially the low LF noise) in the operating temperature range
United Monolithic Semiconductors
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MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without
the prior consent of UNITED MONOLITHIC SEMICONDUCTORS .
25
Ref: GaAs_for_Automotive_06_2006.ppt
date: 23.06.2006
GaAs MMICs for Automotive Radars
Overview
I.
Overview on Automotive RADAR environment
II.
RF Front End Architecture: Trends & Requirements
III.
Semiconductor Process Technologies
IV.
Consequences at MMICs level: Design trends & solutions
IV.1 Frequency Generation : VCO
IV.2 Power Amplifier & Multiplier : TX
IV.3 RX
IV.4 Interconnections
V.
Status & Examples: Existing Solutions
VI.
New Developments
VII. Packaging solutions
VIII. Conclusion
United Monolithic Semiconductors
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MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without
the prior consent of UNITED MONOLITHIC SEMICONDUCTORS .
26
Ref: GaAs_for_Automotive_06_2006.ppt
date: 23.06.2006
IV - Consequences at MMICs level: Design trends & solutions
IV.2 Power Amplifier & Multiplier: TX (1)
GaAs MMICs for Automotive Radars
z
z
z
Design Trends : Multiplier + Amplifier (at 77 GHz)
„
Active multiplier at sub harmonic frequency and High Power Amplifier
„
Self biased active devices
Target
„
Low level of AM noise amplified
„
Distributed circuit suitable for high frequency
„
Good rejection of harmonics thanks to distributed filters on chip
Requirements
„
Technology : P-HEMT 0.15 µm for high power density at high frequency
„
Accurate non linear models for active devices at all harmonic frequencies in the
operating temperature range
United Monolithic Semiconductors
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MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without
the prior consent of UNITED MONOLITHIC SEMICONDUCTORS .
27
Ref: GaAs_for_Automotive_06_2006.ppt
date: 23.06.2006
GaAs MMICs for Automotive Radars
Overview
I.
Overview on Automotive RADAR environment
II.
RF Front End Architecture: Trends & Requirements
III.
Semiconductor Process Technologies
IV.
Consequences at MMICs level: Design trends & solutions
IV.1 Frequency Generation : VCO
IV.2 Power Amplifier & Multiplier : TX
IV.3 RX
IV.4 Interconnections
V.
Status & Examples: Existing Solutions
VI.
New Developments
VII. Packaging solutions
VIII. Conclusion
United Monolithic Semiconductors
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MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without
the prior consent of UNITED MONOLITHIC SEMICONDUCTORS .
28
Ref: GaAs_for_Automotive_06_2006.ppt
date: 23.06.2006
IV - Consequences at MMICs level: Design trends & solutions
IV.3 RX (1)
GaAs MMICs for Automotive Radars
The Choice of the technology depends on the performance to be reached:
„
Diode based Mixers are suitable for low LF noise and high frequency.
„
At 24 GHz mixers based on cold FET can also be used for higher integration level.
z
Design trends: Multibeam / Sub-Harmonic Diode based Mixer
z
Advantages:
z
„
Allow to use an oscillator at a frequency lower than the operating frequency
„
Intrinsic suppression (due to anti-parallel diode) of all the m.fLO + n.fIF for even (m+n)
„
Good isolation LO/IF and LO/RF thanks to passive device (LO short circuit stub at RF/IF port)
„
Not excessive LO power level to reach optimal conversion losses
„
No biasing network (Zero DC consumption)
„
Simplicity of the integration (at layout level)
Limits:
„
Low linearity
„
Limited operating bandwidth (about 10%) due to input / output quarter wavelength stubs
United Monolithic Semiconductors
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MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without
the prior consent of UNITED MONOLITHIC SEMICONDUCTORS .
29
Ref: GaAs_for_Automotive_06_2006.ppt
date: 23.06.2006
GaAs MMICs for Automotive Radars
Overview
I.
Overview on Automotive RADAR environment
II.
RF Front End Architecture: Trends & Requirements
III.
Semiconductor Process Technologies
IV.
Consequences at MMICs level: Design trends & solutions
IV.1 Frequency Generation : VCO
IV.2 Power Amplifier & Multiplier : TX
IV.3 RX
IV.4 Interconnections
V.
Status & Examples: Existing Solutions
VI.
New Developments
VII. Packaging solutions
VIII. Conclusion
United Monolithic Semiconductors
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MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without
the prior consent of UNITED MONOLITHIC SEMICONDUCTORS .
30
Ref: GaAs_for_Automotive_06_2006.ppt
date: 23.06.2006
IV - Consequences at MMICs level: Design trends & solutions
IV.4 Interconnections (1)
GaAs MMICs for Automotive Radars
Interconnections
z
Objective: Fully compatible with automatic equipment for Pick and Place and
Connections
z
Wire Bonding
z
„
Used in production up to 77 GHz
„
MMIC to MMIC and MMIC to external substrates are considered
Bumps: Flip Chip or “Hot Vias”
„
z
Less transition discontinuity but many other problems
Trend: Packaging Solutions
Transitions have to be modelled and introduced
in the design
United Monolithic Semiconductors
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31
Ref: GaAs_for_Automotive_06_2006.ppt
date: 23.06.2006
IV - Consequences at MMICs level: Design trends & solutions
IV.4 Interconnections (2)
Interconnection example @ 77GHz : Wire / Ribbon bonding
GaAs MMICs for Automotive Radars
z
Usually
EXTERNAL
SUBSTRATE
MMIC
„
Gold Wire bonding Ø 25 µm
„
Gold Ribbon W = 25 µm, T = 12,5 µm
TRANSITION
EXTERNAL SUBSTRATE
MMIC
MMIC circuit
including
matching of
a part of the
transition
Bonding
pad cell of
the MMIC
Bonding
pad cell on
the external
substrate
Matching
network on
the external
substrate
OUT
(50 Ohm)
50 Ohm interface
„
„
Flexibility in order to connect either MMICS to MMICs or MMICs to external substrate
Distributed matching to have a wider band
United Monolithic Semiconductors
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32
Ref: GaAs_for_Automotive_06_2006.ppt
date: 23.06.2006
IV - Consequences at MMICs level: Design trends & solutions
IV.4 Interconnections (3)
Interconnection example @ 77GHz : Flip Chip
GaAs MMICs for Automotive Radars
Bumps Foot prints
on the front side of
the chip
Substrates
Coplanar MPA @ 77 GHz
Coplanar VCO @ 77 GHz
Issues
„
„
„
„
„
Parasitic mode
Thermal management is mandatory
Assembly
Quality of the substrate
Detuning
United Monolithic Semiconductors
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33
Ref: GaAs_for_Automotive_06_2006.ppt
date: 23.06.2006
IV - Consequences at MMICs level: Design trends & solutions
IV.4 Interconnections (4)
Interconnection example @ 77GHz : Hot Via
MS on
chip
GaAs MMICs for Automotive Radars
BCB-cover
prober
openings
via
chip
compensation
bumps
chip backside
metalization
CPW
motherboard
metal case
United Monolithic Semiconductors
UMS RESTRICTED
All information contained in this document remains the sole and exclusive property of UNITED
MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without
the prior consent of UNITED MONOLITHIC SEMICONDUCTORS .
34
Ref: GaAs_for_Automotive_06_2006.ppt
date: 23.06.2006
GaAs MMICs for Automotive Radars
Overview
I.
Overview on Automotive RADAR environment
II.
RF Front End Architecture: Trends & Requirements
III.
Semiconductor Process Technologies
IV.
Consequences at MMICs level: Design trends & solutions
V.
Status & Examples: Existing Solutions
VI.
New Developments
VII. Packaging solutions
VIII. Conclusion
United Monolithic Semiconductors
UMS RESTRICTED
All information contained in this document remains the sole and exclusive property of UNITED
MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without
the prior consent of UNITED MONOLITHIC SEMICONDUCTORS .
35
Ref: GaAs_for_Automotive_06_2006.ppt
date: 23.06.2006
VI. New Developments
VI.1 Improved solutions for 77 GHz LRR (1)
GaAs MMICs for Automotive Radars
12.75GHz VCO
76.5GHz Tx
Key features:
„ -40°C to +125°C chip temperature range
„ Optimized cost / performances source architecture
„ Optimized Rx architecture to simplify the RF module
„ Simple bias / assembly oriented
„ Chip protection layer (BCB / SiNx)
76.5GHz Rx
up to 2 SCTx_Rx
can be driven with
a single Tx
United Monolithic Semiconductors
UMS RESTRICTED
All information contained in this document remains the sole and exclusive property of UNITED
MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without
the prior consent of UNITED MONOLITHIC SEMICONDUCTORS .
36
Ref: GaAs_for_Automotive_06_2006.ppt
date: 23.06.2006
GaAs MMICs for Automotive Radars
Overview
I.
Overview on Automotive RADAR environment
II.
RF Front End Architecture: Trends & Requirements
III.
Semiconductor Process Technologies
IV.
Consequences at MMICs level: Design trends & solutions
V.
Status & Examples: Existing Solutions
VI.
New Developments
VII. Packaging solutions
VIII. Conclusion
United Monolithic Semiconductors
UMS RESTRICTED
All information contained in this document remains the sole and exclusive property of UNITED
MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without
the prior consent of UNITED MONOLITHIC SEMICONDUCTORS .
37
Ref: GaAs_for_Automotive_06_2006.ppt
date: 23.06.2006
VII. Packaging solutions
VII.1 One Solution for SRR : Plastic packages (1)
GaAs MMICs for Automotive Radars
mm-waver Low Noise Amplifier in Plastic Package
MMIC
QFN (Quad Flat No lead package)
United Monolithic Semiconductors
UMS RESTRICTED
All information contained in this document remains the sole and exclusive property of UNITED
MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without
the prior consent of UNITED MONOLITHIC SEMICONDUCTORS .
38
Ref: GaAs_for_Automotive_06_2006.ppt
date: 23.06.2006
GaAs MMICs for Automotive Radars
VII. Packaging solutions
VII.2 Solution for LRR: 77 GHz Wave Guide Package (1)
metal lid
ceramic / laminate
MMIC
ceramic / laminate
metal base
PCB
Wave Guide
United Monolithic Semiconductors
UMS RESTRICTED
All information contained in this document remains the sole and exclusive property of UNITED
MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without
the prior consent of UNITED MONOLITHIC SEMICONDUCTORS .
39
Ref: GaAs_for_Automotive_06_2006.ppt
date: 23.06.2006
GaAs MMICs for Automotive Radars
VII. Packaging solutions
VII.3 Additional Packaging Issues
z
Dedicated chip to a given standard package for SRR
z
Custom package for high frequency LRR
z
Necessity to take into account the package impact during the circuit
simulation: RF connections, package grounded inductance, …
z
Frequency limitation for plastic packages: up to 30 GHz
z
Performance limitation: Instability risk, isolation degradation, …
z
Dedicated tooling for measurements
„
z
Not available on the market for high frequency. To be developed
Thermal management at MMIC level
United Monolithic Semiconductors
UMS RESTRICTED
All information contained in this document remains the sole and exclusive property of UNITED
MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without
the prior consent of UNITED MONOLITHIC SEMICONDUCTORS .
40
Ref: GaAs_for_Automotive_06_2006.ppt
date: 23.06.2006
GaAs MMICs for Automotive Radars
Overview
I.
Overview on Automotive RADAR environment
II.
RF Front End Architecture: Trends & Requirements
III.
Semiconductor Process Technologies
IV.
Consequences at MMICs level: Design trends & solutions
V.
Status & Examples: Existing Solutions
VI.
New Developments
VII. Packaging solutions
VIII. Conclusion
United Monolithic Semiconductors
UMS RESTRICTED
All information contained in this document remains the sole and exclusive property of UNITED
MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without
the prior consent of UNITED MONOLITHIC SEMICONDUCTORS .
41
Ref: GaAs_for_Automotive_06_2006.ppt
date: 23.06.2006
VIII. Conclusion (1)
MMIC: Proven Capabilities
z
Functions
„
GaAs MMICs for Automotive Radars
„
z
High level of Integration
„
„
„
z
z
on-chip self biasing leading to fixed supply voltage
Compatible to Automatic Assembly
„
z
2 to 3 chips @ 24 GHz (4 to 7 mm²)
3 chips @ 77 GHz for 3 beams (12 mm²)
less than 30 mm² for 8 beams system
Tuning-less SOLUTIONS
„
z
All RF functions can be done on GaAs MMICs
Frequency generation / TX / RX
wire bonding based inter-connection already in production
Packaging @ 24 GHz
Packaging @ 77 GHz
United Monolithic Semiconductors
UMS RESTRICTED
All information contained in this document remains the sole and exclusive property of UNITED
MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without
the prior consent of UNITED MONOLITHIC SEMICONDUCTORS .
42
Ref: GaAs_for_Automotive_06_2006.ppt
date: 23.06.2006
VIII. Conclusion (2)
MMIC: Future Activities
z
z
GaAs MMICs for Automotive Radars
z
Improvement of Integration
Low Cost Packaging
Improvements on Production Capability
„
„
„
„
„
z
Radar Front-End Architecture Improvements
„
z
Simplify assembly
Tuning-less
Reproducibility
Stability and reliability at automotive operating requirements
Cost reduction with the best combination of design and process
Frequency generation / LO distribution
Measurement tools for production
„
at 24 GHz and 77 GHz
United Monolithic Semiconductors
UMS RESTRICTED
All information contained in this document remains the sole and exclusive property of UNITED
MONOLITHIC SEMICONDUCTORS and shall not be disclosed by the recipient to third party without
the prior consent of UNITED MONOLITHIC SEMICONDUCTORS .
43
Ref: GaAs_for_Automotive_06_2006.ppt
date: 23.06.2006