H I G H C U R R E N T T R E N C H M V ™ P O W E R M O S F E T S I N 5 - L E A D I S O P L U S I 5 - PA K S ™
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SUMMARY TABLE
Part Number
High Current TrenchMVTM Power MOSFETs in 5-lead ISOPLUS i5-PaksTM
2 HUGE TRENCH MOSFETS IN 1 ISOLATED PACKAGE.
Voltage
(V)
IXTL2x240N055T
IXTL2x220N075T
IXTL2x200N085T
IXTL2x180N10T
55
75
85
100
ID (die)
Tc=25°C
(A)
2x240
2x220
2x200
2x180
ID (device)
Tc=25°C
(A)
2x140
2x120
2x112
2x100
RDS(on)
(mOhms)
4.4
5.5
6.0
7.4
Qg
Typ
(nC)
170
165
152
151
trr
Max
(ns)
30
50
55
60
RthJC*
Max
(°C/W)
1.0
1.0
1.0
1.0
Vf
Diode (V)
Package
Type
1
1
1
1
ISOPLUS i5-Pak
ISOPLUS i5-Pak
ISOPLUS i5-Pak
ISOPLUS i5-Pak
Note: Specifications are per MOSFET unless otherwise specified.
* Thermal impedance with isolation
ISOPLUS i5-Pak (5-Leads) (IXTL) Package Outline Drawing
March 2007
Overview
The new IXYS High Current Mid-Voltage Power MOSFETs capitalize on the benefits of
proprietary ISOPLUS packaging technology, the ISOPLUS i5-Pak. IXYS Mid-Voltage MOSFETs
provide for very low conduction and switching losses, and are avalanche rated for
hard-switching applications. The principal feature of the i5-Pak MOSFETs arises from the
joining of two IXYS Mid-Voltage MOSFETs with the reliable, high power handling capability of
IXYS discrete ISOPLUS i5-Pak.
Silicon current handling has outpaced the ability of most traditional discrete packaging, which
typically limits steady state current to 75A. The ISOPLUS i5-Pak is used to full effect by
combining its superior isolation, thermal and power cycling capabilities and flexible
configuration. The ISOPLUS i5-Pak is equipped with 5 heavy-gage leads to provide a dual die,
common-gate configuration with joined copper webs and backside heat sinking, all of which
conservatively improve the package rating to 150A for the two dice. All IXYS ISOPLUS
packages are manufactured with internal direct-copper-bonded (DCB) isolation, are UL
certified and provide integral backside case isolation.
Leads:
1, 5: Drain
2, 4: Source
3: Gate
6. Isolated
Note:
1. TAB 6 - Electrically isolated from the
other pins.
2. All leads and tab are tin plated.
IXYS ISOPLUS packages provide high isolation capability (up to 2500V), improved creepage
distance and dramatically reduce total thermal resistance. Additionally, the ceramic alumina
substrates used also dramatically enhance device reliability due to their superior thermal and
power cycling. The DCB can be patterned like a printed circuit board, which enables the
unique integration capabilities of IXYS ISOPLUS packages. Kunze high performance phase
change materials can be used to further enhance ISOPLUS package thermal performance.
ISOPLUS™ Packages with Internal Alumina DCB Isolation*
Mid-Voltage Power MOSFETS find homes in many applications. These devices are designed
to withstand even the most robust switching conditions commonly required by the automotive
market, as well as the industrial sector. Other applications include DC/DC converters, battery
chargers, and motor drives. Additional products and package options are in process,
including options for lower and higher voltages.
Schematic of High Current TrenchMV™ Power MOSFET
in 5-lead ISOPLUS i5-Pak™
Features
Benefits
Applications
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
RDS(ON) at 125˚C is lower than with a
standard package
Dual Die, Common-Gate configuration
UL Recognized
2500V isolation voltage rating
DCB Substrate gives lower thermal
isolated resistance
Flexible platform, enabling multiple
chip solution
Superior thermal cycling capabilities
•
•
Rugged operation
Lead current conservatively rated to 150A
Reduced component count
Reduces parasistic inductance and
capacitance
Cost-effective
Paralleling capabilities
Automotive/Industrial applications
DC/DC power conversion
Battery chargers
Motor drives
• Provides 2500V, UL recognized isolation with superior thermal
performance (E153432).
• Improves temperature and power cycling capability.
• Cost effective clip mounting.
* IXYS Patented Packages, Patent No. 6,404,065
Example Part +
Isolation Medium
IXFP14N60P with
SIL-PAD 2000™
IXFC14N60P
(ISOPLUS247™ with
Internal DCB Isolation)
RTH(J-C)
0.42 C/W
RTH(C-S)
RTH(J-S)
2.37 C/W 2.79 C/W
RTH(J-DCB) RTH(DCB-Case) 0.21 C/W 1.46 C/W
0.75 C/W 0.50 C/W
– Denotes Inclusion
of Isolation Boundary.
• For more information regarding IXYS ISOPLUS Packages, visit www.ixys.com/datasheet/IXAN0022.pdf
• ISOPLUS, HiPerFET, TrenchMV and ISOPLUS i5-Pak are trademarks of IXYS Corporation. SIL-PAD is a trademark of Berquist Co.
H I G H C U R R E N T T R E N C H M V ™ P O W E R M O S F E T S I N 5 - L E A D I S O P L U S I 5 - PA K S ™
N
E
W
P
R
O
D
U
C
T
B
R
I
E
F
SUMMARY TABLE
Part Number
High Current TrenchMVTM Power MOSFETs in 5-lead ISOPLUS i5-PaksTM
2 HUGE TRENCH MOSFETS IN 1 ISOLATED PACKAGE.
Voltage
(V)
IXTL2x240N055T
IXTL2x220N075T
IXTL2x200N085T
IXTL2x180N10T
55
75
85
100
ID (die)
Tc=25°C
(A)
2x240
2x220
2x200
2x180
ID (device)
Tc=25°C
(A)
2x140
2x120
2x112
2x100
RDS(on)
(mOhms)
4.4
5.5
6.0
7.4
Qg
Typ
(nC)
170
165
152
151
trr
Max
(ns)
30
50
55
60
RthJC*
Max
(°C/W)
1.0
1.0
1.0
1.0
Vf
Diode (V)
Package
Type
1
1
1
1
ISOPLUS i5-Pak
ISOPLUS i5-Pak
ISOPLUS i5-Pak
ISOPLUS i5-Pak
Note: Specifications are per MOSFET unless otherwise specified.
* Thermal impedance with isolation
ISOPLUS i5-Pak (5-Leads) (IXTL) Package Outline Drawing
March 2007
Overview
The new IXYS High Current Mid-Voltage Power MOSFETs capitalize on the benefits of
proprietary ISOPLUS packaging technology, the ISOPLUS i5-Pak. IXYS Mid-Voltage MOSFETs
provide for very low conduction and switching losses, and are avalanche rated for
hard-switching applications. The principal feature of the i5-Pak MOSFETs arises from the
joining of two IXYS Mid-Voltage MOSFETs with the reliable, high power handling capability of
IXYS discrete ISOPLUS i5-Pak.
Silicon current handling has outpaced the ability of most traditional discrete packaging, which
typically limits steady state current to 75A. The ISOPLUS i5-Pak is used to full effect by
combining its superior isolation, thermal and power cycling capabilities and flexible
configuration. The ISOPLUS i5-Pak is equipped with 5 heavy-gage leads to provide a dual die,
common-gate configuration with joined copper webs and backside heat sinking, all of which
conservatively improve the package rating to 150A for the two dice. All IXYS ISOPLUS
packages are manufactured with internal direct-copper-bonded (DCB) isolation, are UL
certified and provide integral backside case isolation.
Leads:
1, 5: Drain
2, 4: Source
3: Gate
6. Isolated
Note:
1. TAB 6 - Electrically isolated from the
other pins.
2. All leads and tab are tin plated.
IXYS ISOPLUS packages provide high isolation capability (up to 2500V), improved creepage
distance and dramatically reduce total thermal resistance. Additionally, the ceramic alumina
substrates used also dramatically enhance device reliability due to their superior thermal and
power cycling. The DCB can be patterned like a printed circuit board, which enables the
unique integration capabilities of IXYS ISOPLUS packages. Kunze high performance phase
change materials can be used to further enhance ISOPLUS package thermal performance.
ISOPLUS™ Packages with Internal Alumina DCB Isolation*
Mid-Voltage Power MOSFETS find homes in many applications. These devices are designed
to withstand even the most robust switching conditions commonly required by the automotive
market, as well as the industrial sector. Other applications include DC/DC converters, battery
chargers, and motor drives. Additional products and package options are in process,
including options for lower and higher voltages.
Schematic of High Current TrenchMV™ Power MOSFET
in 5-lead ISOPLUS i5-Pak™
Features
Benefits
Applications
•
•
•
•
•
•
•
•
•
•
•
•
•
•
•
RDS(ON) at 125˚C is lower than with a
standard package
Dual Die, Common-Gate configuration
UL Recognized
2500V isolation voltage rating
DCB Substrate gives lower thermal
isolated resistance
Flexible platform, enabling multiple
chip solution
Superior thermal cycling capabilities
•
•
Rugged operation
Lead current conservatively rated to 150A
Reduced component count
Reduces parasistic inductance and
capacitance
Cost-effective
Paralleling capabilities
Automotive/Industrial applications
DC/DC power conversion
Battery chargers
Motor drives
• Provides 2500V, UL recognized isolation with superior thermal
performance (E153432).
• Improves temperature and power cycling capability.
• Cost effective clip mounting.
* IXYS Patented Packages, Patent No. 6,404,065
Example Part +
Isolation Medium
IXFP14N60P with
SIL-PAD 2000™
IXFC14N60P
(ISOPLUS247™ with
Internal DCB Isolation)
RTH(J-C)
0.42 C/W
RTH(C-S)
RTH(J-S)
2.37 C/W 2.79 C/W
RTH(J-DCB) RTH(DCB-Case) 0.21 C/W 1.46 C/W
0.75 C/W 0.50 C/W
– Denotes Inclusion
of Isolation Boundary.
• For more information regarding IXYS ISOPLUS Packages, visit www.ixys.com/datasheet/IXAN0022.pdf
• ISOPLUS, HiPerFET, TrenchMV and ISOPLUS i5-Pak are trademarks of IXYS Corporation. SIL-PAD is a trademark of Berquist Co.