APN237
13.5-15.5 GHz
GaN Dual Channel
Power Amplifier
Advance Datasheet
Revision: May 2015
Applications
 Point-to-Point Digital Radios
 Point-to-Multipoint Digital Radios
 SATCOM Terminals
Product Description
The APN237 monolithic GaN HEMT amplifier
X = 2100 um Y = 3100 um
Product Features
is a dual channel broadband, two-stage
 RF frequency:
power device, designed for use in SATCOM
13.5 to 15.5 GHz
 Dual Channel amplifier allows for easy off-chip power combining
 Single Channel Linear Gain*: 13 dB typ.
Terminals and point-to-point digital radios. It
is intended for use with external combiners,
 Psat:
 Combined (est)**: 44.5 dBm PP / 44 dBm CW typ. ***
 Single Channel: 42 dBm PP / 41.5 dBm CW Typ. ***
could used as two independent PAs. To
ensure rugged and reliable operation, HEMT
 PAE% @ Psat*: 43% PP / 30% CW typ. ***
devices are fully passivated. Both bond pad
 Die Size: 6.51 sq. mm.
and backside metallization are Au-based that
 0.2um GaN HEMT Process
is compatible with epoxy and eutectic die
 4 mil SiC substrate
attach methods.
 DC Power: 28 VDC @ 1280 mA
Performance Characteristics (Ta = 25°C)
Specification
Min
Frequency
Linear Gain **
Input Return Loss **
Output Return Loss **
P1dB (Pulsed)**
P1dB (CW)**
Psat (Pulsed)**
Psat (CW) **
PAE @ Psat (Pulsed)**
PAE% @ Psat (CW) **
Vd1, Vd1a
Vg1, Vg1a
Id1+Id1a
13.5
12
7
5
Typ
13
10
9
40.5
38.8
44.5
44
43
30
28
-3.5
1280
Max
Unit
15.5
GHz
dB
dB
dB
dBm
dBm
dBm
dBm
%
%
V
V
mA
* Single Channel
** Assuming Optimal combining *** @ Vd=28V
Absolute Maximum Ratings (Ta = 25°C)
Parameter
Vd1, Vd1a
Id1+Id1a
Vg1, Vg1a
Input drive level
Assy. Temperature
(TBD seconds)
Min
Max
Unit
20
28
1600
0
TBD
300
V
mA
V
dBm
deg. C
-5
Note: The data contained in this document is for information only. Northrop Grumman reserves the right to change without notice the specifications, designs, prices or
conditions of sale, as they apply to this product. The product represented by this datasheet is subject to U.S. Export Law as contained in the Export Administration
Regulations (EAR).
Web: http://www.as.northropgrumman.com/mps
©2015 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: as-mps.sales@ngc.com
Page 1
APN237
13.5-15.5 GHz
GaN Dual Channel
Power Amplifier
Advance Datasheet
Revision: May 2015
Measured On-Wafer Performance Characteristics (Typical Performance at 25°C)
Vd1 = 28 V, Id1 = 640 mA* (Single Channel)
Power**, Gain, PAE% vs. Frequency
50
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
45
Pout (dBm), Gain (db), PAE%
Gain (dB)
Linear Gain vs. Frequency
40
35
30
25
Gain @ Pin=-5 dBm
P1dB (dBm)
PAE% @ Pin=34dBm
15
10
5
0
10 11 12 13 14 15
16 17 18 19
20
12
Frequency (GHz)
0
-2
-4
-4
Output Return Loss (dB)
0
-8
-10
-12
-14
-16
-18
14
15
16
17
Output Return Loss vs. Frequency
-2
-6
13
Frequency (GHz)
Input Return Loss vs. Frequency
Input Return Loss (dB)
Linear Gain (dB)
Gain @ Pin=34 dBm
Pout @ Pin=34dBm
Max PAE%
20
-6
-8
-10
-12
-14
-16
-18
-20
-20
10 11 12 13 14 15 16 17 18 19 20
10 11 12 13 14 15 16 17 18 19 20
Frequency (GHz)
Frequency (GHz)
* Pulsed-Power On-Wafer
Note: The data contained in this document is for information only. Northrop Grumman reserves the right to change without notice the specifications, designs, prices or
conditions of sale, as they apply to this product. The product represented by this datasheet is subject to U.S. Export Law as contained in the Export Administration
Regulations (EAR).
Web: http://www.as.northropgrumman.com/mps
©2015 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: as-mps.sales@ngc.com
Page 2
APN237
13.5-15.5 GHz
GaN Dual Channel
Power Amplifier
Advance Datasheet
Revision: May 2015
Measured On-Wafer Performance Characteristics (Typical Performance at 25°C)
Vd1 = 28 V, Id1 = 640 mA* (Single Channel)
Pout & Gain Vs. vs. Pin
22
44
50
20
40
45
36
40
16
Pout
32
14
28
12
24
10
20
Gain @ 12.5 GHz
Gain @ 13.5 GHz
Gain @ 15.5 GHz
Gain @ 14.5 GHz
Gain @ 16.5 GHz
Pout @ 12.5 GHz
Pout @ 13.5 GHz
Pout @ 14.5 GHz
Pout @ 15.5 GHz
Pout @ 16.5 GHz
8
6
4
2
16
-10
-5
0
5
10
15
20
25
30
30
25
20
15
12
0
PAE @ 12.5 GHz
PAE @ 13.5 GHz
PAE @ 14.5 GHz
PAE @ 15.5 GHz
PAE @ 16.5 GHz
35
Pout (dBm)
Gain
Pout (dBm)
18
Gain (dB)
PAE% vs. Pin
8
10
4
5
0
0
-5
35
0
5
10
15
20
25
30
35
Pin (dBm)
Pin (dBm)
Id vs. Pin
Pout, Gain & PAE% vs. Frequency
50
1400
1300
1200
1100
1000
900
800
700
600
500
400
300
200
100
0
Id (mA)
Pout (dBm), Gain (db), PAE%
45
Gain @ 12.5 GHz
Gain @ 13.5 GHz
Gain @ 14.5 GHz
Gain @ 15.5 GHz
40
35
30
25
Linear Gain (dB)
Gain @ Pin=34 dBm
Pout @ Pin=34dBm
Max PAE%
20
Gain @ Pin=-5 dBm
P1dB (dBm)
PAE% @ Pin=34dBm
15
10
5
Gain @ 16.5 GHz
0
-10
-5
0
5
10
15
Pin (dBm)
20
25
30
35
12
13
14
15
16
17
Frequency (GHz)
* On-Wafer Pulsed-Power
Note: The data contained in this document is for information only. Northrop Grumman reserves the right to change without notice the specifications, designs, prices or
conditions of sale, as they apply to this product. The product represented by this datasheet is subject to U.S. Export Law as contained in the Export Administration
Regulations (EAR).
Web: http://www.as.northropgrumman.com/mps
©2015 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: as-mps.sales@ngc.com
Page 3
APN237
13.5-15.5 GHz
GaN Dual Channel
Power Amplifier
Advance Datasheet
Revision: May 2015
Measured Fixture Performance Characteristics (Typical Performance at 25°C)
Vd = 28 V, Id = 640 mA ** (Single Channel)
Pout & Gain Vs. vs. Pin
22
44
50
20
40
45
18
36
Pout
32
14
28
12
24
10
20
8
16
6
Gain @ 13GHz
Gain @ 14GHz
Gain @ 15GHz
Gain @ 16GHz
Pout @ 13.5GHz
Pout @ 14.5GHz
Pout @ 15.5GHz
4
2
0
0
5
10
15
20
25
30
PAE% @ 13.5GHz
PAE% @ 14GHz
PAE% @ 14.5GHz
PAE% @ 15GHz
PAE% @ 15.5GHz
PAE% @ 16GHz
30
25
20
15
12
Gain @ 13.5GHz
Gain @ 14.5GHz
Gain @ 15.5GHz
Pout @ 13GHz
Pout @ 14GHz
Pout @ 15GHz
Pout @ 16GHz
PAE% @ 13GHz
35
PAE%
Gain
40
Pout (dBm)
16
Gain (dB)
PAE% vs. Pin
8
10
4
5
0
0
35
0
5
10
Pin (dBm)
Pout (dBm), Gain (db), PAE%
Id (mA)
5
10
15
25
30
35
Pout, Gain & PAE% vs. Frequency
Id @ 13GHz
Id @ 14GHz
Id @ 15GHz
Id @ 16GHz
0
20
Pin (dBm)
Id vs. Pin
1500
1400
1300
1200
1100
1000
900
800
700
600
500
400
300
200
100
0
15
Id @ 13.5GHz
Id @ 14.5GHz
Id @ 15.5GHz
20
25
Pin (dBm)
30
35
44
42
40
38
36
34
32
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
12
Linear Gain (dB)*
Gain @ Pin=-0 dBm
P1dB (dBm)
Psat (dBm)
PAE% @ PSat
Max PAE%
13
14
15
16
17
Frequency (GHz)
**CW Fixture *On-wafer Pulsed Power
Note: The data contained in this document is for information only. Northrop Grumman reserves the right to change without notice the specifications, designs, prices or
conditions of sale, as they apply to this product. The product represented by this datasheet is subject to U.S. Export Law as contained in the Export Administration
Regulations (EAR).
Web: http://www.as.northropgrumman.com/mps
©2015 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: as-mps.sales@ngc.com
Page 4
APN237
13.5-15.5 GHz
GaN Dual Channel
Power Amplifier
Advance Datasheet
Revision: May 2015
Measured Fixture Performance Characteristics (Typical Performance at 25°C)
Vd = 24 V, Id = 640 mA ** (Single Channel)
Pout & Gain Vs. vs. Pin
22
44
50
20
40
45
18
36
40
Pout
14
28
12
24
10
20
8
16
6
Gain @ 13GHz
Gain @ 14GHz
Gain @ 15GHz
Gain @ 16GHz
Gain @ 13.5GHz
Gain @ 14.5GHz
Gain @ 15.5GHz
4
2
0
0
5
10
15
20
25
30
30
25
15
8
10
4
5
0
0
0
35
5
10
Id vs. Pin
Pout (dBm), Gain (db), PAE%
Id (mA)
5
10
15
20
25
30
35
Pout, Gain & PAE% vs. Frequency
Id @ 13GHz
Id @ 14GHz
Id @ 15GHz
Id @ 16GHz
0
15
Pin (dBm)
Pin (dBm)
1500
1400
1300
1200
1100
1000
900
800
700
600
500
400
300
200
100
0
PAE% @ 13.5GHz
PAE% @ 14.5GHz
PAE% @ 15.5GHz
20
12
Gain @ 13.5GHz
Gain @ 14.5GHz
Gain @ 15.5GHz
Gain @ 13GHz
Gain @ 14GHz
Gain @ 15GHz
Gain @ 16GHz
PAE% @ 13GHz
PAE% @ 14GHz
PAE% @ 15GHz
PAE% @ 16GHz
35
PAE%
Gain
32
Pout (dBm)
16
Gain (dB)
PAE% vs. Pin
Id @ 13.5GHz
Id @ 14.5GHz
Id @ 15.5GHz
20
25
Pin (dBm)
30
35
44
42
40
38
36
34
32
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
12
Linear Gain (dB)*
Gain @ Pin=-0 dBm
P1dB (dBm)
Psat (dBm)
PAE% @ PSat
Max PAE%
13
14
15
16
17
Frequency (GHz)
**CW Fixture *On-wafer Pulsed Power
Note: The data contained in this document is for information only. Northrop Grumman reserves the right to change without notice the specifications, designs, prices or
conditions of sale, as they apply to this product. The product represented by this datasheet is subject to U.S. Export Law as contained in the Export Administration
Regulations (EAR).
Web: http://www.as.northropgrumman.com/mps
©2015 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: as-mps.sales@ngc.com
Page 5
APN237
13.5-15.5 GHz
GaN Dual Channel
Power Amplifier
Advance Datasheet
Revision: May 2015
Measured Fixture Performance Characteristics (Typical Performance at 25°C)
Vd = 20 V, Id = 640 mA ** (Single Channel)
Pout & Gain Vs. vs. Pin
22
44
50
20
40
45
18
36
40
Pout
14
28
12
24
10
20
8
16
6
Gain @ 13GHz
Gain @ 14GHz
Gain @ 15GHz
Gain @ 16GHz
Pout @ 13.5GHz
Pout @ 14.5GHz
Pout @ 15.5GHz
4
2
0
0
5
10
15
20
25
30
30
25
15
8
10
4
5
0
0
0
35
5
10
Id vs. Pin
Pout (dBm), Gain (db), PAE%
Id (mA)
5
10
15
20
25
30
35
Pout, Gain & PAE% vs. Frequency
Id @ 13GHz
Id @ 14GHz
Id @ 15GHz
Id @ 16GHz
0
15
Pin (dBm)
Pin (dBm)
1500
1400
1300
1200
1100
1000
900
800
700
600
500
400
300
200
100
0
PAE% @ 13.5GHz
PAE% @ 14.5GHz
PAE% @ 15.5GHz
20
12
Gain @ 13.5GHz
Gain @ 14.5GHz
Gain @ 15.5GHz
Pout @ 13GHz
Pout @ 14GHz
Pout @ 15GHz
Pout @ 16GHz
PAE% @ 13GHz
PAE% @ 14GHz
PAE% @ 15GHz
PAE% @ 16GHz
35
PAE%
Gain
32
Pout (dBm)
16
Gain (dB)
PAE% vs. Pin
Id @ 13.5GHz
Id @ 14.5GHz
Id @ 15.5GHz
20
25
Pin (dBm)
30
35
44
42
40
38
36
34
32
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
12
Linear Gain (dB)*
Gain @ Pin=-0 dBm
P1dB (dBm)
Psat (dBm)
PAE% @ PSat
Max PAE%
13
14
15
16
17
Frequency (GHz)
**CW Fixture *On-wafer Pulsed Power
Note: The data contained in this document is for information only. Northrop Grumman reserves the right to change without notice the specifications, designs, prices or
conditions of sale, as they apply to this product. The product represented by this datasheet is subject to U.S. Export Law as contained in the Export Administration
Regulations (EAR).
Web: http://www.as.northropgrumman.com/mps
©2015 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: as-mps.sales@ngc.com
Page 6
APN237
13.5-15.5 GHz
GaN Dual Channel
Power Amplifier
Advance Datasheet
Revision: May 2015
Measured On-Wafer Performance Characteristics (Typical Performance at 25°C)
Vd1 = 28 V, Id1 = 640 mA* (Single Channel)
Freq
Freq GHz
GHz S11
S11 Mag
Mag
S11
S11 Ang
Ang
S21
S21 Mag
Mag
S21
S21Ang
Ang
8.0
8.0
0.763
0.788
-118.728
-175.150
2.025
0.056
-5.316
-69.128
0.026
0.002
-79.725
-149.171
0.643
0.624
105.703
145.730
8.5
8.5
0.745
0.792
-129.232
177.549
2.475
0.054
-29.249
-50.533
0.035
0.003
-109.207
100.724
0.581
0.595
90.176
126.795
9.0
9.0
0.727
0.782
-144.920
169.211
3.063
0.081
-54.848
-26.971
0.049
0.005
-135.564
98.959
0.500
0.528
68.623
102.406
9.5
9.5
0.767
0.660
160.468
-165.250
0.171
3.844
-9.116
-84.234
0.006
0.064
84.303
-159.157
0.455
0.401
75.452
33.060
10.0
10.0
0.743
0.551
148.982
168.079
0.425
4.640
-13.926
-117.414
0.002
0.077
39.443
167.180
0.386
0.369
43.034
-26.017
10.5
10.5
0.685
0.338
136.345
132.231
1.041
5.184
-37.959
-155.335
0.004
0.087
45.457
129.682
0.307
0.442
6.553
-89.481
11.0
11.0
0.606
0.173
120.640
88.903
2.053
5.221
-72.411
167.878
0.005
0.100
78.299
94.397
0.252
0.570
-24.432
-135.864
11.5
11.5
0.461
0.109
101.870
-2.669
3.697
4.972
-111.478
134.073
0.004
0.099
-19.991
61.580
0.229
0.639
-50.326
-168.949
12.0
12.0
0.305
0.121
82.279
-42.153
5.877
4.772
-156.942
103.029
0.006
0.096
22.788
33.347
0.215
0.634
-71.266
164.069
12.5
12.5
0.140
0.190
57.241
-67.395
7.944
4.772
156.616
72.213
0.006
0.099
-11.884
3.157
0.209
0.593
-83.304
137.031
13.0
13.0
0.033
0.206
-7.924
-92.413
9.536
4.877
110.075
37.631
0.004
0.107
-57.805
-31.666
0.223
0.503
-95.152
105.027
13.5
13.5
0.107
0.183
-101.508
-137.289
10.221
4.978
65.248
-2.741
0.007
0.109
-38.639
-69.653
0.217
0.408
-111.473
53.102
14.0
14.0
0.192
0.184
-119.288
101.705
10.070
4.581
25.403
-51.124
0.002
0.102
-170.834
-119.302
0.204
0.481
-115.664
-25.051
14.5
14.5
0.245
0.464
-134.405
23.429
10.015
3.251
-11.781
-102.034
0.002
0.075
-161.559
-165.984
0.172
0.694
-119.745
-86.861
15.0
15.0
0.273
0.687
-143.902
-19.644
10.061
1.868
-47.813
-141.891
0.002
0.042
64.799
158.450
0.174
0.830
-116.071
-122.949
15.5
15.5
0.254
0.790
-141.837
-45.634
9.979
1.067
-83.956
-169.984
0.004
0.023
125.238
125.612
0.186
0.895
-115.597
-146.686
16.0
16.0
0.259
0.868
-133.613
-66.251
9.615
0.636
-121.442
166.489
0.004
0.014
51.271
93.154
0.205
0.921
-120.465
-162.925
16.5
16.5
0.348
0.883
-122.232
-80.739
8.968
0.398
-159.474
148.501
0.005
0.007
5.375
63.953
0.227
0.942
-134.886
-174.306
17.0
17.0
0.477
0.913
-126.098
-94.134
8.065
0.258
162.641
133.907
0.005
0.006
-6.692
77.989
0.200
0.957
-153.352
175.897
17.5
17.5
0.569
0.898
-132.862
-103.079
6.836
0.175
125.406
117.097
0.008
0.004
-53.726
60.761
0.144
0.974
-179.669
166.982
18.0
18.0
0.662
0.943
-139.509
-113.030
5.673
0.121
90.341
102.141
0.004
0.003
-176.720
48.952
0.062
0.979
117.915
158.426
18.5
18.5
19.0
19.0
0.725
0.919
0.769
0.959
-148.466
-120.648
-155.321
-129.866
4.646
0.082
3.720
0.062
55.355
92.753
20.982
79.009
0.003
0.003
0.007
0.005
-141.496
23.430
-102.598
29.283
0.101
0.972
0.209
0.959
25.350
149.970
-8.918
141.554
19.5
19.5
20.0
20.0
0.807
0.945
0.845
0.969
-160.898
-137.015
-166.839
-144.637
2.978
0.053
2.350
0.043
-12.195
66.885
-46.408
48.927
0.002
0.004
0.006
0.001
-161.597
31.623
111.398
66.212
0.322
0.950
0.433
0.895
-25.318
131.493
-39.840
117.360
20.5
20.5
21.0
21.0
0.865
0.948
0.895
0.969
-171.744
-152.423
-176.622
-158.197
1.839
0.038
1.404
0.020
0.002
0.001
0.005
0.001
-135.188
129.984
-152.650
-106.560
0.545
0.553
0.647
0.280
-54.065
82.893
-65.974
177.907
21.5
21.5
22.0
22.0
0.910
0.921
0.925
0.961
178.326
-166.413
173.710
-170.156
1.002
0.005
0.627
0.004
-81.138
17.435
-118.400
-28.627
-159.002
-35.339
0.005
0.003
0.009
0.004
76.670
33.807
87.246
-135.315
0.747
0.820
0.832
0.939
-76.390
158.926
-89.068
142.715
22.5
22.5
23.0
23.0
0.923
0.906
0.931
0.969
169.561
-177.330
165.925
178.450
0.341
0.005
0.173
0.003
0.005
0.004
0.010
0.004
-140.272
-78.396
115.686
3.125
0.873
0.959
0.903
0.974
-99.611
131.501
-108.257
123.035
23.5
23.5
24.0
24.0
0.934
0.924
0.940
0.978
162.265
171.476
159.140
166.907
0.087
0.002
0.043
0.004
0.005
0.003
0.007
0.007
68.757
146.767
102.110
1.366
0.918
0.964
0.933
0.965
-116.042
116.072
-122.749
110.042
159.607
12.052
122.484
18.547
92.298
-6.674
68.801
25.446
52.012
8.586
S12
S12Mag
Mag S12
S12Ang
Ang S22
S22Mag
Mag
S22
S22 Ang
Ang
* Pulsed-Power On-Wafer
Note: The data contained in this document is for information only. Northrop Grumman reserves the right to change without notice the specifications, designs, prices or
conditions of sale, as they apply to this product. The product represented by this datasheet is subject to U.S. Export Law as contained in the Export Administration
Regulations (EAR).
Web: http://www.as.northropgrumman.com/mps
©2015 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: as-mps.sales@ngc.com
Page 7
APN237
13.5-15.5 GHz
GaN Dual Channel
Power Amplifier
Advance Datasheet
Die Size and Bond Pad Locations (Not to Scale)
Revision: May 2015
X = 2100  25 µm
Y = 3100  25 µm
DC Bond Pad = 100 x 100  0.5 µm
RF Bond Pad = 100 x 100  0.5 µm
Chip Thickness = 101  5 µm
536 µm
VD1
GND
VG1
GND
136 µm
3100 µm
GND
GND
RFIN
RFOUT
GND
GND
2200 µm
2200 µm
GND
GND
RFINA
RFOUTA
GND
VD1A
GND
VG1A
GND
GND
900 µm
900 µm
136 µm
536 µm
Biasing/De-Biasing Details:
2100 µm
APN237 should be biased from the top and bottom of the die. For best performance each side should be biased up
separately, but they can be tied together.
Listed below are some guidelines for GaN device testing and wire bonding:
a. Limit positive gate bias (G-S or G-D) to < 1V
b. Know your devices’ breakdown voltages
c. Use a power supply with both voltage and current limit.
d. With the power supply off and the voltage and current levels at minimum, attach the ground lead to your
test fixture.
i.
Apply negative gate voltage (-5 V) to ensure that all devices are off
ii.
Ramp up drain bias to ~10 V
iii. Gradually increase gate bias voltage while monitoring drain current until 20% of the operating
current is achieved
iv. Ramp up drain to operating bias
v.
Gradually increase gate bias voltage while monitoring drain current until the operating current is
achieved
e. To safely de-bias GaN devices, start by debiasing output amplifier stages first (if applicable):
i.
Gradually decrease drain bias to 0 V.
ii.
Gradually decrease gate bias to 0 V.
iii. Turn off supply voltages
f. Repeat de-bias procedure for each amplifier stage
Note: The data contained in this document is for information only. Northrop Grumman reserves the right to change without notice the specifications, designs, prices or
conditions of sale, as they apply to this product. The product represented by this datasheet is subject to U.S. Export Law as contained in the Export Administration
Regulations (EAR).
Web: http://www.as.northropgrumman.com/mps
©2015 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: as-mps.sales@ngc.com
Page 8
APN237
13.5-15.5 GHz
GaN Dual Channel
Power Amplifier
Advance Datasheet
Revision: May 2015
Suggested Bonding Arrangement
VG1
VD1
= 0.1uF, 50V (Shunt) [4]
[4]
= 0.1uF, 15V (Shunt)
= 0.01uF, 15V (Shunt)
VD1
RF Input
Divider
GND
VG1
= 100 pF, 50V (Shunt)
GND
= 0.01uF, 50V (Shunt)
RF Output
Combiner
GND
GND
RFIN
RFOUT
GND
GND
= 10 Ohms, 30V (Series)
= 100 pF, 15V (Shunt)
GND
GND
RFINA
RFOUTA
GND
VD1A
GND
Substrate
GND
VG1A
GND
Substrate
[4]
VD1A
VG1A
Note: APN237 must be biased from
the top and bottom bias pads.
Recommended Assembly Notes
1. Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils
from the amplifier.
2. Best performance obtained from use of <10 mil (long) by 3 by 0.5 mil ribbons on input and output.
3. Part must be biased from both sides as indicated.
4. The 0.1uF, 50V capacitors are not needed if the drain supply line is clean. If Drain Pulsing of the device
is to be used, do NOT use the 0.1uF , 50V Capacitors.
Mounting Processes
Most Northrop Grumman Aerospace Systems (NGAS) GaN IC chips have a gold backing and can be
mounted successfully using either a conductive epoxy or AuSn attachment. NGAS recommends the use of
AuSn for high power devices to provide a good thermal path and a good RF path to ground. Maximum
recommended temp during die attach is 320oC for 30 seconds.
Note: Many of the NGAS parts do incorporate airbridges, so caution should be used when determining the
pick up tool.
CAUTION: THE IMPROPER USE OF AuSn ATTACHMENT CAN CATASTROPHICALLY DAMAGE GaN
CHIPS.
PLEASE ALSO REFER TO OUR “GaN Chip Handling Application Note” BEFORE HANDLING,
ASSEMBLING OR BIASING THESE MMICS!
Note: The data contained in this document is for information only. Northrop Grumman reserves the right to change without notice the specifications, designs, prices or
conditions of sale, as they apply to this product. The product represented by this datasheet is subject to U.S. Export Law as contained in the Export Administration
Regulations (EAR).
Web: http://www.as.northropgrumman.com/mps
©2015 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: as-mps.sales@ngc.com
Page 9
Approved for Public Release: Northrop Grumman Case 15-0969, 05/11/15