Data Sheet
50V N-Channel MOSFET
AF15N50
General Description
Features
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency and to
minimize switch node ringing of DC-DC converters
using either synchronous or conventional switching
PWM controllers. It has been optimized for low gate
charge, low RDS(ON), fast switching speed and body
diode reverse recovery performance.
•
•
•
The AF15N50 is available in PDFN-5×6-8 package.
Applications
•
•
•
Option 1
Typ RDS(ON)=14.32m @ VGS=10V, ID=15A
Typ RDS(ON)=16.36m @ VGS=4.5V, ID=15A
RoHS Compliant
Primary Switch in Isolated DC-DC
Synchronous Rectifier
Load Switch
Option 2
PDFN-5×6-8
Figure 1. Package Type of AF15N50
Aug. 2013
Rev. 1. 0
BCD Semiconductor Manufacturing Limited
1
Data Sheet
50V N-Channel MOSFET
AF15N50
Pin Configuration
DNP Package
(PDFN-5×6-8)
Option 1
Option 2
Figure 2. Pin Configuration of AF15N50 (Top View)
Internal Structure
Figure 3. Internal Structure of AF15N50
Aug. 2013
Rev. 1. 0
BCD Semiconductor Manufacturing Limited
2
Data Sheet
50V N-Channel MOSFET
AF15N50
Ordering Information
AF15N50
Circuit Type
G1: Green
Package
DNP: PDFN-5×6-8
TR: Tape & Reel
Package
PDFN-5×6-8
-
Part Number
Marking ID
AF15N50DNPTR-G1
Packing Type
15N50DNP-G1
Tape & Reel
BCD Semiconductor's Pb-free products, as designated with "G1" suffix in the part number, are RoHS compliant
and green.
Absolute Maximum Ratings (Note 1)
TC=25°C, unless otherwise specified.
Parameter
Drain to Source Voltage
Symbol
Value
Unit
VDS
50
V
TC=25ºC
15
TC=100ºC
15
Continuous Drain Current
ID
Pulsed Drain Current
IDM
60
A
Gate to Source Voltage
VGS
±12
V
Power Dissipation
PD
31
W
Operating Temperature Range
TOP
-55 to 150
ºC
Storage Temperature Range
TSTG
-55 to 150
ºC
A
Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute
Maximum Ratings” for extended periods may affect device reliability.
Aug. 2013
Rev. 1. 0
BCD Semiconductor Manufacturing Limited
3
Data Sheet
50V N-Channel MOSFET
AF15N50
Recommended Operating Conditions
Parameter
Symbol
Condition
Thermal Resistance (Note 2)
JA
Thermal Resistance
JC
Junction to
Ambient
Junction to Case
Value
Unit
50
C/W
4
C/W
Note 2: Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square pad.
Electrical Characteristics
TC=25°C, unless otherwise specified.
Static Characteristics
Parameters
Symbol
Conditions
Min
Drain
to
Source
Breakdown Voltage
VDSS(BR)
VGS=0V, ID=0.25mA
50
Gate Threshold Voltage
VGS(TH)
VDS=VGS, ID=0.25mA
0.5
Zero Gate Voltage
Drain Current
Gate
to
Source
Leakage Current
Drain
to
Source
On-state Resistance
Aug. 2013
Typ
Max
Unit
V
0.9
2
V
IDSS
VDS=50V, VGS=0V
1
A
IGSS
VGS=10V, VDS=0V
±10
A
VGS=10V, ID=15A
10
14.32
20
VGS=4.5V, ID=15A
12
16.36
30
RDS(ON)
m
Rev. 1. 0
BCD Semiconductor Manufacturing Limited
4
Data Sheet
50V N-Channel MOSFET
AF15N50
Electrical Characteristics (Continued)
TC=25°C, unless otherwise specified.
Dynamic Characteristics
Parameters
Symbol
Input Capacitance
Output Capacitance
Reverse
Capacitance
Transfer
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Ciss
Coss
Crss
Conditions
VGS=0V, VDS=18V,
f=1MHz
VGS=0V, VDS=25V,
f=1MHz
VGS=0V, VDS=18V,
f=1MHz
VGS=0V, VDS=25V,
f=1MHz
VGS=0V, VDS=18V,
f=1MHz
VGS=0V, VDS=25V,
f=1MHz
td(on)
tr
td(off)
Min
Typ
Unit
1350
pF
1316
110
pF
97
95
pF
85
4.162
VGS=10V, ID=15A,
VDD=25V, RG=6
14.85
ns
35.452
tf
31.108
Gate to Source Charge
Qgs
3.2
Gate to Drain Charge
(Miller Charger)
Qgd
Total Gate Charge
Qg
15.2
Gate Resistance
Rg
0.85
Aug. 2013
Max
VGS=0V to 10V,
VDD=25V, ID=15A
Rev. 1. 0
5.7
nC

BCD Semiconductor Manufacturing Limited
5
Data Sheet
50V N-Channel MOSFET
AF15N50
Typical Performance Characteristics
TC=25°C, unless otherwise noted.
10000
14
Junction Capacitance (pF)
ID, Drain Current (A)
12
10
8
6
4
f=1MHz
1000
Ciss Ave
Coss Ave
Crss Ave
100
2
0
10
-2
0
1
2
3
4
0
5
10
15
20
25
30
35
VDS, Drain to Source Voltage (V)
Figure 4. On Region Characteristics
Figure 5. Typical Junction Capacitance
40
100
0.05
o
-55 C
o
25 C
o
85 C
o
125 C
o
150 C
0.04
10
IS, Source Current (A)
RDS(ON), Drain to Source On-resistance ()
5
VDS, Drain to Source Voltage (V)
0.03
0.02
o
25 C
o
125 C
1
0.1
0.01
1E-3
0.01
1E-4
ID=15A
1E-5
0.0
0.00
2
3
4
5
6
7
8
9
10
11
Figure 6. Typical Transfer Characteristics
Aug. 2013
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source to Drain Voltage (V)
VGS, Gate to Source Voltage (V)
Figure 7. Source to Drain Diode Forward Voltage
Rev. 1. 0
BCD Semiconductor Manufacturing Limited
6
Data Sheet
50V N-Channel MOSFET
AF15N50
Typical Performance Characteristics
TC=25°C, unless otherwise noted.
RDS(ON), Drain to Source On-resistance (m)
VGS, Gate to Source Voltage (V)
10
8
6
4
VDS=25V
ID=15A
2
18
17
16
15
14
13
VGS=10V
VGS=4.5V
12
11
10
0
0
5
10
15
20
25
30
0
35
2
DC
PW=10s
PW=1s
PW=100ms
PW=10ms
PW=1ms
PW=100s
ID, Drain Current (A)
10
RDS(ON)
1
o
TJ(MAX)=150 C
0.1
0.01
0.01
o
TA=25 C
Single Pulse
DUT on 1*MRP Board
VGS=10V
0.1
1
10
100
8
10
12
14
16
18
20
2.0
VGS=4V
VGS=10V
ID=15A
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50
0
50
100
150
o
VDS, Drain to Source Voltage (V)
TJ, Junction Temperature ( C)
Figure 10. SOA, Safe Operation Area
Aug. 2013
6
Figure 9. RDS(ON) vs. Continuous Drain Current
Normalnized Drain to Source On-resistance (m)
Figure 8. Gate Charge Characteristics
100
4
ID, Continuous Drain Current (A)
Qg, Gate Charge (nC)
Figure 11. Normalized On-resistance vs. TJ
Rev. 1. 0
BCD Semiconductor Manufacturing Limited
7
Data Sheet
50V N-Channel MOSFET
AF15N50
Mechanical Dimensions
PDFN-5×6-8
4.700(0.185)
5.100(0.201)
1.000(0.039)
1.200(0.047)
Unit: mm(inch)
0.900(0.035)
1.100(0.043)
0.510(0.020)
0.710(0.028)
3.820(0.150)
4.020(0.158)
1.20±0.10
+0
DEPTH 0.05 -0.05
3.180(0.125)
3.540(0.139)
5.600(0.220)
6.000(0.236)
E
0.100(0.004)
MAX
0.510(0.020)
MIN
0.510(0.020)
0.710(0.028)
0.330(0.013)
0.510(0.020)
0.060(0.002)
0.200(0.008)
0.210(0.008)
0.340(0.013)
D
Option 1
1.170(0.046)
1.370(0.054)
8
12
Option 1
D
Symbol
E
min(mm) max(mm) min(inch) max(inch) min(mm) max(mm) min(inch) max(inch)
Option 1
Option 2
--
5.100
5.150(BSC)
--
0.201
0.203(BSC)
5.900
6.100
6.150(BSC)
0.232
0.240
0.242(BSC)
Option 2
1.000(0.039)
1.400(0.055)
3.700(0.146)
4.100(0.161)
3.280(0.129)
3.680(0.145)
Pin 1 Mark
Aug. 2013
Rev. 1. 0
BCD Semiconductor Manufacturing Limited
8
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