APN228
27-31 GHz
GaN Power Amplifier
Preliminary Datasheet
Revision: April 2015
Applications
 Point-to-Point Digital Radios
 Point-to-Multipoint Digital Radios
 SatCom Terminals
Product Description
X = 4.0mm Y = 4.0mm
The APN228 monolithic GaN HEMT amplifier
is a broadband, two-stage power device,
Product Features
designed for use in SatCom Terminals and
 RF frequency: 27 to 31 GHz
point-to-point digital radios. To ensure rugged
 Linear Gain: 19.5 dB typ.
and reliable operation, HEMT devices are
 Psat: 41.2 dBm typ.
fully passivated. Both bond pad and backside
 Die Size: 16 sq. mm.
metallization are Au-based that is compatible
 0.2um GaN HEMT Process
with epoxy and eutectic die attach methods.
 4 mil SiC substrate
 DC Power: 28 VDC @ 1.2 A
Performance Characteristics (Ta = 25°C)
Specification
Min
Frequency
Linear Gain
Input Return Loss
Output Return Loss
P1db (PP*)
Psat (PP*)
PAE @ Psat (PP*)
P1db (CW)
Psat (CW)
PAE @ Psat (CW)
Vd1=Vg1a, Vd2=Vd2a
Vg1. Vg1a
Vg2, Vg2a
Id1+Id1a
Id2+Id2a
* Pulsed-Power On-Wafer
27
18
16
11
40
Typ
19.5
24
15
39
41.2
28
38.6
40.2
25.5
28
-3.5
-3.5
240
960
Max
Unit
31
GHz
dB
dB
dB
dBm
dBm
%
dBm
dBm
%
V
V
V
mA
mA
Absolute Maximum Ratings (Ta = 25°C)
Parameter
Min
Max
Unit
Vd1=Vg1a ,Vd2=Vd2a
Id1+Id1a
Id2+Id2a
Vg1, Vg1a, Vg2, Vg2a
Input drive level
Assy. Temperature
(TBD seconds)
20
28
240
960
0
TBD
300
V
mA
mA
V
dBm
deg. C
-5
Preliminary Information: The data contained in this document describes new products in the sampling or preproduction phase of development and is for information only.
Northrop Grumman reserves the right to change without notice the characteristic data and other specifications as they apply to this product. The product represented by
this datasheet is subject to U.S. Export Law as contained in ITAR or the EAR regulations.
Web: http://www.as.northropgrumman.com/mps
©2015 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: as-mps.sales@ngc.com
Page 1
APN228
27-31 GHz
GaN Power Amplifier
Preliminary Datasheet
Revision: April 2015
Measured Performance Characteristics (Typical Performance at 25°C)
Vd = 28.0 V, Id1 + Id1a = 240 mA, Id2 + Id2a = 960 mA
Linear Gain vs. Frequency *
Power, Gain, PAE% vs. Frequency *
24
45
22
40
Pout (dBm), Gain (dB), PAE%
20
18
Gain (dB)
16
14
12
10
8
6
4
2
35
30
25
20
15
10
5
Gain @ Pin=0 dBm
P1dB (dBm)
Psat (dBm)
PAE% @ PSat
0
0
22 23 24 25 26 27 28 29 30 31 32 33 34 35 36
26
Frequency (GHz)
-5
-5
Output Return Loss (dB)
0
-15
-20
-25
-30
28
29
30
31
32
33
Output Return Loss vs. Frequency *
0
-10
27
Frequency (GHz)
Input Return Loss vs. Frequency *
Input Return Loss (dB)
Linear Gain (dB)
-10
-15
-20
-25
-30
-35
-35
22 23 24 25 26 27 28 29 30 31 32 33 34 35 36
22 23 24 25 26 27 28 29 30 31 32 33 34 35 36
Frequency (GHz)
Frequency (GHz)
* Pulsed-Power On-Wafer
Preliminary Information: The data contained in this document describes new products in the sampling or preproduction phase of development and is for information only.
Northrop Grumman reserves the right to change without notice the characteristic data and other specifications as they apply to this product. The product represented by
this datasheet is subject to U.S. Export Law as contained in ITAR or the EAR regulations.
Web: http://www.as.northropgrumman.com/mps
©2015 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: as-mps.sales@ngc.com
Page 2
APN228
27-31 GHz
GaN Power Amplifier
Preliminary Datasheet
Revision: April 2015
Measured Performance Characteristics (Typical Performance at 25°C)
Vd = 28.0 V, Id1 + Id1a = 240 mA, Id2 + Id2a = 960 mA
Power, Gain, PAE% vs. Frequency
CW Fixtured
45
45
40
40
Pout (dBm), Gain (dB), PAE%
35
30
25
20
15
10
5
Linear Gain (dB)
Gain @ Pin=0 dBm
P1dB (dBm)
Psat (dBm)
35
30
25
20
15
10
Gain @ Pin=0 dBm
Psat (dBm)
PAE% Max
5
PAE% @ PSat
0
0
26
27
28
29
30
31
32
33
26
Frequency (GHz)
Gain 27 GHz
Gain 29 GHz
Gain 31 GHz
Pout 27 GHz
Pout 29 GHz
Pout 31 GHz
Gain 28 GHz
Gain 30 GHz
Gain 32 GHz
Pout 28 GHz
Pout 30 GHz
Pout 32 GHz
29
30
31
32
33
44
42
40
38
36
34
32
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
Gain (dB)
Output Power, Gain vs. Input Power
CW Fixtured
Pout (dBm)
Gain (dB)
28
Frequency (GHz)
Output Power, Gain vs. Input Power
Pulsed-Power On-Wafer
22
21
20
19
18
17
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
27
P1dB (dBm)
PAE% @ PSat
22
21
20
19
18
17
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
Gain 26 GHz
Gain 28 GHz
Gain 30 GHz
Gain 32 GHz
Pout 26 GHz
Pout 28 GHz
Pout 30 GHz
Pout 32 GHz
Gain 27 GHz
Gain 29 GHz
Gain 31 GHz
Gain 33 GHz
Pout 27 GHz
Pout 29 GHz
Pout 31 GHz
Pout 33 GHz
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
Pin (dBm)
Pin (dBm)
44
42
40
38
36
34
32
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
Pout (dBm)
Pout (dBm), Gain (dB), PAE%
Power, Gain, PAE% vs. Frequency
Pulsed-Power On-Wafer
Preliminary Information: The data contained in this document describes new products in the sampling or preproduction phase of development and is for information only.
Northrop Grumman reserves the right to change without notice the characteristic data and other specifications as they apply to this product. The product represented by
this datasheet is subject to U.S. Export Law as contained in ITAR or the EAR regulations.
Web: http://www.as.northropgrumman.com/mps
©2015 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: as-mps.sales@ngc.com
Page 3
APN228
27-31 GHz
GaN Power Amplifier
Preliminary Datasheet
Revision: April 2015
Measured Performance Characteristics (Typical Performance at 25°C)
Vd = 28.0 V, Id1 + Id1a = 240 mA, Id2 + Id2a = 960 mA
36
34
32
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
PAE% vs. Input Power
CW Fixtured
27 GHz
28 GHz
29 GHz
30 GHz
PAE%
PAE%
PAE% vs. Input Power
Pulsed-Power On-Wafer
31 GHz
32 GHz
36
34
32
30
28
26
24
22
20
18
16
14
12
10
8
6
4
2
0
1500
1400
1300
1200
1100
1000
900
800
700
600
500
400
300
200
100
0
PAE% 27 GHz
PAE% 28 GHz
PAE% 29 GHz
PAE% 30 GHz
PAE% 31 GHz
PAE% 32 GHz
PAE% 33 GHz
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
Pin (dBm)
Pin (dBm)
Stage Currents vs. Input Power
Pulsed-Power On-Wafer
Stage Currents vs. Input Power
CW Fixtured
Id1 27
Id1 29
Id1 31
Id2 27
Id2 29
Id2 31
GHz
GHz
GHz
GHz
GHz
GHz
Id1 28
Id1 30
Id1 32
Id2 28
Id2 30
Id2 32
GHz
GHz
GHz
GHz
GHz
GHz
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
Pin (dBm)
Drain Current (mA)
Drain Current (mA)
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
PAE% 26 GHz
1500
1400
1300
1200
1100
1000
900
800
700
600
500
400
300
200
100
0
Id1 26 GHz
Id1 28 GHz
Id1 30 GHz
Id1 32 GHz
Id2 26 GHz
Id2 28 GHz
Id2 30 GHz
Id2 32 GHz
Id1 27 GHz
Id1 29 GHz
Id1 31 GHz
Id1 33 GHz
Id2 27 GHz
Id2 29 GHz
Id2 31 GHz
Id2 33 GHz
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
Pin (dBm)
Preliminary Information: The data contained in this document describes new products in the sampling or preproduction phase of development and is for information only.
Northrop Grumman reserves the right to change without notice the characteristic data and other specifications as they apply to this product. The product represented by
this datasheet is subject to U.S. Export Law as contained in ITAR or the EAR regulations.
Web: http://www.as.northropgrumman.com/mps
©2015 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: as-mps.sales@ngc.com
Page 4
APN228
27-31 GHz
GaN Power Amplifier
Preliminary Datasheet
Revision: April 2015
Measured Performance Characteristics (Typical Performance at 25°C)
Vd = 28.0 V, Id1 + Id1a = 240 mA, Id2 + Id2a = 960 mA
OQPSK ACPL(dBc)
OQPSK ACPU(dBc)
8PSK ACPL(dBc)
8PSK ACPU(dBc)
Pout
4 6 8 10 12 14 16 18 20 22 24 26 28 30
Pin (dBm)
8PSK ACPR @ 30GHz
CW in Fixture *
42
40
38
36
34
32
30
28
26
24
22
20
18
ACPR (dBc)
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
ACPR vs. Output Power @ 30 GHz
CW in Fixture *
Pout (dBm)
ACPR (dBc)
Pout & ACPR vs. Input Power @ 30 GHz
CW in Fixture *
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
OQPSK ACPL
OQPSK ACPU
8PSK ACPL
8PSK ACPU
26
28
30
32
34
Pout (dBm)
36
38
40
OQPSK ACPR @ 30GHz
CW in Fixture *
* Parameters Used: Channel BW =10 MHz, Frequency Offset = 11.5 MHz, Integrated BW = 7 MHz. Uncorrected – includes End-block losses
Preliminary Information: The data contained in this document describes new products in the sampling or preproduction phase of development and is for information only.
Northrop Grumman reserves the right to change without notice the characteristic data and other specifications as they apply to this product. The product represented by
this datasheet is subject to U.S. Export Law as contained in ITAR or the EAR regulations.
Web: http://www.as.northropgrumman.com/mps
©2015 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: as-mps.sales@ngc.com
Page 5
APN228
27-31 GHz
GaN Power Amplifier
Preliminary Datasheet
Revision: April 2015
Measured Performance Characteristics (Typical Performance at 25°C)
Vd = 28.0 V, Id1 + Id1a = 240 mA, Id2 + Id2a = 960 mA
Gain (dB), Pout (dBm), PAE%
45
1.5
Pout (dBm)
AM-PM (Deg/dB)
1.25
40
1
35
0.75
30
0.5
25
0.25
20
0
15
-0.25
10
-0.5
5
-0.75
0
-1
0
5
10
15
20
25
50
30
Gain (dB)
PAE%
AM-AM (dB/dB)
45
Gain (dB), Pout (dBm), PAE%
Gain (dB)
PAE%
AM-AM (dB/dB)
AM-PM (Deg/dB), AM-AM (dB/dB)
50
CW Fixtured Gain, Pout. PAE%,
AM-AM & AM-PM vs. Pin @ 30 GHz *
1.5
Pout (dBm)
AM-PM (Deg/dB)
1.25
40
1
35
0.75
30
0.5
25
0.25
20
0
15
-0.25
10
-0.5
5
-0.75
0
-1
0
5
Pin (dBm)
10
15
20
25
AM-PM (Deg/dB), AM-AM (dB/dB)
CW Fixtured Gain, Pout. PAE%,
AM-AM & AM-PM vs. Pin @ 29 GHz *
30
Pin (dBm)
* In un-calibrated fixture with 2-tone input
Thermal Properties
Preliminary Thermal Properties with die mounted with 1mil 80/20 AuSn
Eutectic to 25mil CuW Shim.
Conditions
Vd = 28V
Id1 + Id1a = 345.6 mA *
Id2 + Id2a = 1380 mA *
Pin=28.94 dBm
Pout=41.18 dBm
Shim Boundary
Temperature
25 ºC
38 ºC
50 ºC
Junction
Temperature
Tjc
180.4 ºC
200.0 ºC **
219.2 ºC
Thermal
Resistance
θjc
4.4 ºC/W
4.6 ºC/W
4.8 ºC/W
* Vd = 28.0 V, Idq1 = 240 mA, Id2q = 960 mA
** Max recommended. Pre-qualification reliability testing indicates that MTTF in excess of 105
hours can be achieved by ensuring Tjc is kept below 200ºC.
Preliminary Information: The data contained in this document describes new products in the sampling or preproduction phase of development and is for information only.
Northrop Grumman reserves the right to change without notice the characteristic data and other specifications as they apply to this product. The product represented by
this datasheet is subject to U.S. Export Law as contained in ITAR or the EAR regulations.
Web: http://www.as.northropgrumman.com/mps
©2015 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: as-mps.sales@ngc.com
Page 6
APN228
27-31 GHz
GaN Power Amplifier
Preliminary Datasheet
Revision: April 2015
Measured Performance Characteristics (Typical Performance at 25°C)
Vd = 28.0 V, Id1 + Id1a = 240 mA, Id2 + Id2a = 960 mA *
Freq GHz
S11 Mag
S11 Ang
S21 Mag
S21 Ang
S12 Mag
S12 Ang
S22 Mag
S22 Ang
21.0
21.5
22.0
22.5
23.0
23.5
24.0
24.5
25.0
25.5
26.0
26.5
27.0
27.5
28.0
28.5
29.0
29.5
30.0
30.5
31.0
31.5
32.0
32.5
33.0
33.5
34.0
34.5
35.0
35.5
36.0
36.5
37.0
0.073
0.070
0.047
0.048
0.033
0.003
0.013
0.043
0.053
0.039
0.070
0.095
0.074
0.098
0.117
0.089
0.071
0.043
0.063
0.010
0.012
0.047
0.019
0.016
0.054
0.074
0.046
0.027
0.017
0.033
0.017
0.057
0.035
140.736
120.733
100.323
93.133
50.584
118.778
-117.419
-120.919
-137.959
-148.517
-168.507
174.073
157.969
143.460
125.100
114.311
98.748
56.329
47.172
60.692
67.196
171.750
120.205
83.549
-137.514
156.014
132.888
55.546
146.946
-57.825
62.286
-147.918
158.791
1.038
1.275
1.537
1.910
2.396
2.964
3.734
4.691
5.837
7.069
8.368
9.310
9.877
10.165
10.207
9.999
9.775
9.570
9.300
9.134
8.975
9.086
9.016
8.847
8.271
7.349
6.049
4.821
3.883
3.075
2.395
1.863
1.425
83.349
63.805
45.035
24.396
3.260
-18.492
-42.187
-67.738
-95.260
-124.632
-156.630
170.814
138.106
106.596
75.665
46.202
17.929
-9.187
-36.249
-63.091
-90.521
-118.390
-148.410
-179.494
146.498
113.022
79.625
49.838
20.514
-5.565
-30.590
-55.779
-79.650
0.006
0.006
0.009
0.007
0.010
0.011
0.010
0.008
0.008
0.008
0.012
0.014
0.003
0.012
0.016
0.016
0.021
0.016
0.024
0.002
0.013
0.025
0.027
0.013
0.010
0.017
0.014
0.021
0.019
0.026
0.024
0.024
0.028
-178.738
139.168
-59.362
-39.020
-61.427
-6.034
-92.575
22.499
-22.586
-32.580
80.611
73.342
173.492
-26.439
-39.899
-62.256
-40.122
-109.534
-85.926
33.569
-74.315
-128.080
178.045
71.808
-121.660
-160.154
-106.290
120.654
101.070
44.968
125.536
-21.454
-55.769
0.024
0.043
0.041
0.055
0.075
0.070
0.066
0.061
0.025
0.036
0.078
0.105
0.144
0.188
0.175
0.164
0.138
0.119
0.098
0.100
0.088
0.045
0.069
0.041
0.056
0.064
0.028
0.043
0.015
0.021
0.048
0.103
0.091
-19.159
-23.300
-42.268
-71.525
-92.131
-111.220
-142.797
-165.432
159.514
-20.978
-58.790
-88.050
-98.724
-131.428
-154.443
-175.473
166.598
164.863
156.791
151.182
136.624
127.158
108.070
125.275
85.961
148.641
112.878
33.886
-113.245
-57.291
-108.437
-122.307
-136.961
* Pulsed-Power On-Wafer
Preliminary Information: The data contained in this document describes new products in the sampling or preproduction phase of development and is for information only.
Northrop Grumman reserves the right to change without notice the characteristic data and other specifications as they apply to this product. The product represented by
this datasheet is subject to U.S. Export Law as contained in ITAR or the EAR regulations.
Web: http://www.as.northropgrumman.com/mps
©2015 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: as-mps.sales@ngc.com
Page 7
APN228
27-31 GHz
GaN Power Amplifier
Preliminary Datasheet
Die Size and Bond Pad Locations (Not to Scale)
VD2
GND
GND
VG2
VD1
GND
GND
892 µm
2292 µm
1692 µm
1292 µm
VG1
X = 4000 µm  25 µm
Y = 4000  25 µm
DC Bond Pad = 100 x 100  0.5 µm
RF Bond Pad = 100 x 100  0.5 µm
Chip Thickness = 101  5 µm
Revision: April 2015
GND
RFIN
GND
4000 µm
GND
RFOUT
2562 µm
892 µm
VD2A
GND
GND
VG2A
GND
VD1A
GND
VG1A
GND
1435 µm
1292 µm
1692 µm
2292 µm
4000 µm
Biasing/De-Biasing Details:
Bias for 1st stage is from top. The 2nd stages must bias up from both sides.
Listed below are some guidelines for GaN device testing and wire bonding:
a.
b.
c.
d.
Limit positive gate bias (G-S or G-D) to < 1V
Know your devices’ breakdown voltages
Use a power supply with both voltage and current limit.
With the power supply off and the voltage and current levels at minimum, attach the ground lead to
your test fixture.
i.
Apply negative gate voltage (-5 V) to ensure that all devices are off
ii.
Ramp up drain bias to ~10 V
iii. Gradually increase gate bias voltage while monitoring drain current until 20% of the operating
current is achieved
iv. Ramp up drain to operating bias
v. Gradually increase gate bias voltage while monitoring drain current until the operating current
is achieved
e. To safely de-bias GaN devices, start by debiasing output amplifier stages first (if applicable):
i.
Gradually decrease drain bias to 0 V.
ii.
Gradually decrease gate bias to 0 V.
iii. Turn off supply voltages
f. Repeat de-bias procedure for each amplifier stage
Preliminary Information: The data contained in this document describes new products in the sampling or preproduction phase of development and is for information only.
Northrop Grumman reserves the right to change without notice the characteristic data and other specifications as they apply to this product. The product represented by
this datasheet is subject to U.S. Export Law as contained in ITAR or the EAR regulations.
Web: http://www.as.northropgrumman.com/mps
©2015 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: as-mps.sales@ngc.com
Page 8
APN228
27-31 GHz
GaN Power Amplifier
Preliminary Datasheet
VG2
Suggested Bonding Arrangement
[4]
Revision: April 2015
VD2
= 0.1uF, 50V (Shunt) [4]
VD1
[4]
VG1
= 0.01uF, 50V (Shunt)
RF
Output
VD2
GND
GND
VG2
VD1
GND
VG1
RF
Input
GND
= 100 pF, 50V (Shunt)
GND
RFIN
GND
Substrate
GND
RFOUT
GND
VD2A
GND
GND
VG2A
GND
VD1A
GND
VG1A
Substrate
= 0.1uF, 15V (Shunt)
= 0.01uF, 15V (Shunt)
VG1A
[4]
VD1A
VD2A
[4]
= 10 Ohms, 30V (Series)
= 100 pF, 15V (Shunt)
Recommended Assembly Notes
1. Bypass caps should be 100 pF (approximately) ceramic (single-layer) placed no farther than 30 mils from the
amplifier.
2. Best performance obtained from use of <10 mil (long) by 3 by 0.5 mil ribbons on input and output.
3. Part must be biased from both sides as indicated.
4. The 0.1uF, 50V capacitors are not needed if the drain supply line is clean. If Drain Pulsing of the device is to be
used, do NOT use the 0.1uF , 50V Capacitors.
VG2A
Mounting Processes
Most NGAS GaN IC chips have a gold backing and can be mounted successfully using either a conductive epoxy or
AuSn attachment. NGAS recommends the use of AuSn for high power devices to provide a good thermal path and a
good RF path to ground. Maximum recommended temp during die attach is 320 oC for 30 seconds.
Note: Many of the NGAS parts do incorporate airbridges, so caution should be used when determining the pick up
tool.
CAUTION: THE IMPROPER USE OF AuSn ATTACHMENT CAN CATASTROPHICALLY DAMAGE GaN CHIPS.
PLEASE ALSO REFER TO OUR “GaN Chip Handling Application Note” BEFORE HANDLING,
ASSEMBLING OR BIASING THESE MMICS!
Preliminary Information: The data contained in this document describes new products in the sampling or preproduction phase of development and is for information only.
Northrop Grumman reserves the right to change without notice the characteristic data and other specifications as they apply to this product. The product represented by
this datasheet is subject to U.S. Export Law as contained in ITAR or the EAR regulations.
Web: http://www.as.northropgrumman.com/mps
©2015 Northrop Grumman Systems Corporation
Phone: (310) 814-5000 • Fax: (310) 812-7011 • E-mail: as-mps.sales@ngc.com
Page 9
Approved for Public Release: Northrop Grumman Case 15-0864, 05/01/14