AOD417
P-Channel Enhancement Mode Field Effect Transistor
General Description
Features
The AOD417 uses advanced trench technology to
provide excellent RDS(ON), low gate charge and low
gate resistance. With the excellent thermal resistance
of the DPAK package, this device is well suited for
high current load applications.
VDS (V) = -30V
(VGS = -10V)
ID = -25A
RDS(ON) < 34mΩ (VGS = -10V)
RDS(ON) < 55mΩ (VGS = -4.5V)
-RoHS Compliant
-Halogen Free*
100% UIS Tested!
100% Rg Tested!
TO-252
D-PAK
Top View
D
D
Bottom View
G
G
S
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
VDS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current B,G
VGS
TA=25°C
G
TA=100°C
Avalanche Current C
Power Dissipation B
TC=100°C
Power Dissipation A
TA=70°C
C
V
-20
IDM
-60
IAR
-14
A
EAR
30
mJ
2.5
W
1.6
-55 to 175
Symbol
Alpha & Omega Semiconductor, Ltd.
W
25
TJ, TSTG
t ≤ 10s
Steady-State
Steady-State
A
50
PDSM
Junction and Storage Temperature Range
Maximum Junction-to-Case D
±20
ID
PD
TA=25°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Units
V
-25
Pulsed Drain Current C
Repetitive avalanche energy L=0.3mH
TC=25°C
Maximum
-30
RθJA
RθJC
Typ
16.7
40
2.5
°C
Max
25
50
3
Units
°C/W
°C/W
°C/W
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AOD417
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=-250µA, VGS=0V
-30
-1
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
-1
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-60
TJ=55°C
VGS=-10V, ID=-20A
Static Drain-Source On-Resistance
TJ=125°C
VGS=-4.5V, ID=-7A
gFS
Forward Transconductance
VDS=-5V, ID=-20A
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Max
-5
VGS=0V, VDS=0V, f=1MHz
µA
±100
nA
-1.9
-3
V
27
34
A
36
40
55
18
-0.75
mΩ
mΩ
S
-1
V
-6
A
920
VGS=0V, VDS=-15V, f=1MHz
Units
V
VDS=-24V, VGS=0V
IDSS
RDS(ON)
Typ
pF
140
pF
90
pF
6
9
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V)
16.2
nC
Qg(4.5V) Total Gate Charge (4.5V)
8.2
nC
2.9
nC
3.6
nC
VGS=-10V, VDS=-15V, ID=-20A
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
IF=-20A, dI/dt=100A/µs
Qrr
Body Diode Reverse Recovery Charge IF=-20A, dI/dt=100A/µs
14
Body Diode Reverse Recovery Time
VGS=-10V, VDS=-15V, RL=0.75Ω,
RGEN=0.75Ω
8
ns
30
ns
22
ns
26
ns
23
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
TA =25°C. The Power dissipation P DSM is based on R θJA (<10s) and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design, and the maximum temperature of 175°C may be u sed if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming
a maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
*This device is guaranteed green after data code 8X11 (Sep 1ST 2008).
Rev1: Sep. 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AOD417
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
25
60
-10V
VDS=-5V
50
-6V
ID=-10mA,
20
-4.5V
15
-ID(A)
-ID (A)
40
VGS=0V
30
10
20
VGS=-3.5V
125°C
5
10
25°C
-40°C
0
0
0
1
2
3
4
5
1
1.5
-VDS (Volts)
Figure 1: On-Region Characteristics
2.5
3
3.5
Normalized On-Resistance
55
50
VGS=-4.5V
40
35
VGS=-10V
30
4.5
5
850
185
90
1.6
45
4
-VGS(Volts)
Figure 2: Transfer Characteristics
60
RDS(ON) (mΩ )
2
1.4
VGS=-10V
ID=-20A
1.2
1
VGS=-4.5V
ID=-7A
0.8
25
0.6
20
0
5
10
15
20
-50
25
-25
0
25
50
75
100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
-ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
80
1.0E+01
ID=-20A
1.0E+00
1.0E-01
60
50
-IS (A)
RDS(ON) (mΩ )
70
125°C
1.0E-02
125°C
1.0E-03
40
-40°C
1.0E-04
30
25°C
25°C
1.0E-05
20
3
4
5
6
7
8
9
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
10
1.0E-06
0.0
0.2
0.4
0.6
0.8
1.0
-VSD (Volts)
Figure 6: Body-Diode Characteristics
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AOD417
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1500
VDS=-15V
ID=-20A
1250
ID=-10mA, VGS=0V
Capacitance (pF)
-VGS (Volts)
8
6
4
Ciss
1000
2
750
500
Crss
Coss
250
0
0
0
3
6
9
12
15
0
18
1000.0
10
15
20
25
160
RDS(ON)
limited
1.0
0.1
DC
100µs
Power (W)
10µs
10.0
TJ(Max)=175°C
TC=25°C
0.0
0.01
30
850
185
90
200
100.0
ID (Amps)
5
-VDS (Volts)
Figure 8: Capacitance Characteristics
-Qg (nC)
Figure 7: Gate-Charge Characteristics
TJ(Max)=175°C
TC=25°C
120
80
40
0.1
1
VDS (Volts)
10
0
0.0001
100
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=Tc+PDM.ZθJC.RθJC
RθJC=3°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD
Ton
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
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AOD417
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
100
ID=-10mA, VGS=0V
80
TA=25°C
60
40
TA=150°C
50
Power Dissipation (W)
-ID(A), Peak Avalanche Current
120
40
30
20
10
20
0
0
0.000001
0.00001
0.0001
0
0.001
25
60
25
50
20
40
Power (W)
Current rating
30
15
20
5
10
0
50
75
100
125
150
Zθ JA Normalized Transient
Thermal Resistance
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=50°C/W
125
150
175
850
185
90
TA=25°C
0
0.001
175
TCASE (°C)
Figure 14: Current De-rating (Note B)
10
100
30
10
25
75
TCASE (°C)
Figure 13: Power De-rating (Note B)
Time in avalanche, tA (s)
Figure 12: Single Pulse Avalanche capability
0
50
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Single Pulse
0.001
0.00001
0.0001
Ton
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
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AOD417
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
-
VDC
+
VDC
Qgs
Vds
Qgd
+
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
toff
ton
td(on)
Vgs
-
DUT
Vgs
td(off)
tr
tf
90%
Vdd
VDC
+
Rg
Vgs
10%
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
2
L
EAR= 1/2 LIAR
Vds
Vds
Id
-
Vgs
Vgs
VDC
+
Rg
BVDSS
Vdd
Id
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
L
Vgs
Ig
Alpha & Omega Semiconductor, Ltd.
-Isd
+ Vdd
t rr
dI/dt
-I RM
Vdd
VDC
-
-I F
-Vds
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