Chapter 3 Single-Stage Amplifiers Chen Xiaofei 2010 HUST Chen Xiaofei CMOS Chapter3 1 Overview • Reading – Chapter 3 • Introduction In this lecture, we study the low-frequency behavior of single-stage CMOS amplifiers. Analyzing both the large-signal and the small-signal characteristics of each circuit, we develop intuitive techniques and models that prove useful in understanding more complex systems. Following a brief review of basic concepts, we describe in this chapter four types of amplifiers: ---Common-Source Amplifier ---Common-Gate Amplifier ---Source Followers ---Cascode Chen Xiaofei CMOS Chapter3 2 Table of Content • Analog Design • Common-Source Amplifier • Source Followers • Common-Gate Amplifier • Cascode Chen Xiaofei CMOS Chapter3 3 Single-Stage Amplifiers Chen Xiaofei CMOS Chapter3 4 3.1 Analog Design Tradeoffs Most of these parameters trade with each other. Such trade-offs lead to many challenges in the design of high performance amplifiers. Chen Xiaofei CMOS Chapter3 5 DC and ac Analysis • DC Analysis (Large-Signal Analysis) --- Determine the exact biasing. • ac Analysis (Small-Signal Analysis) --- Obtain the expression of the voltage gain, small-signal input and output impedance. Chen Xiaofei CMOS Chapter3 6 3.2 Common Source Chen Xiaofei CMOS Chapter3 7 Common-Source Amplifier Table of Content • Common Source (CS) with Resistive Load • CS stage with diode-connected MOS load • CS with Current Source Load • CS with Triode Region Load • CS with source degeneration Chen Xiaofei CMOS Chapter3 8 3.2.1 Common Source (CS) with Resistive Load • Resistive Load is often used in high-speed circuit because of the linearity of resistance, and also the output voltage swing may reach up to VDD. Fig. 3.1 (a) CS Stage; (b) input-output characteristic; (c) equivalent circuit in deep triode region Chen Xiaofei CMOS Chapter3 9 DC Analysis • DC Analysis (Large-Signal Analysis) (1) When V in < VTH , M1 is in cut-off region, Id=0, Vout=VDD-IdRD=VDD (2) When V in > VTH , and V in < V in1 , M1 is in saturation region. Vout = VDD − μnCox W 2 L (Vin −VTH )2 RD Here we have neglected channel length modulation. (3) When Vin − VTH = Vout , M1 is at the boundary of saturation and triode regions. μnCox W Vin1 − VTH = VDD − (Vin1 − VTH ) 2 RD 2 L From which Vin1-VTH and hence Vout can be calculated. 1 + 4αVDD − 1 Vin1 = + VT H where 2α Chen Xiaofei W 1 W ) RD = k PN ( ) RD L 2 L k P = μCox ....Technology parameter 1 2 α = μ nCox ( CMOS Chapter3 10 DC Analysis (Cont.) (4) For Vin > Vin1, M1 is in the triode region, Vout = VDD − μnCox W 2 L 2 RD[2(Vin −VTH )Vout −Vout ] As VGS has less control on Id when transistor M1 works in triode region, we usually leave M1 in saturation for a large voltage gain. If Vin is high enough to drive M1 into deep triode region. Vout<<2(Vin-VTH), and, Vout = VDD Ron VDD = Ron + RD 1+ μ C W R (V −V ) n ox D in TH L In very deep triode range, Ron→0, Vout →0 Chen Xiaofei CMOS Chapter3 11 AC Analysis • AC Analysis (Small-Signal Analysis) (1) Derivation at the operation point Assuming that the transistor is biased in strong inversion, active region Vout = VDD − μnCox W 2 L (Vin −VTH )2 RD Taking the derivative of Vout with respect to Vin, we get, dVout W Av = = −RDμnCox (Vin −VTH ) = −gmRD dVin L Chen Xiaofei CMOS Chapter3 12 AC Analysis (Cont.) (2) Finding the gain using the small-signal equivalent circuit Fig. 3.2 (a) CS Stage; Chen Xiaofei (b) small-signal equivalent circuit CMOS Chapter3 13 AC Analysis (Cont.) (3) Intuitive observation Av = − g m RD This result can be directly derived from the observation that M1 converts an input voltage change ΔVin to a drain current change gm ΔVin , and hence an output voltage change - gmRD ΔVin . Chen Xiaofei CMOS Chapter3 14 AC Analysis (Cont.) • Taking the effect of channel length modulation in M1 into account, the small-signal equivalent circuit is modified as following, Fig.3.3 small-signal equivalent circuit including the output resistance of M1 Av = −gm (RD ro ) Chen Xiaofei CMOS Chapter3 15 Intrinsic Gain • Intrinsic Gain If RD=∞, then Av = −gmro called the “intrinsic gain” of a transistor, this quantity represents the maximum voltage gain that can be achieved using a single device. For ideal long-channel device, ro→ ∞, intrinsic gain → ∞; however, in today’s Fig 3.4 CMOS technology, intrinsic gain of short-channel device is between roughly 10 and 30. Thus, we usually assume 1/gm << ro . Question?: In Fig.3.4, Kirchhoff’s current law (KCL) requires that ID1 = I1. Then, how can Vin change the current of M1 if I1 is constant? Chen Xiaofei CMOS Chapter3 16 Common-Source Amplifier Table of Content • Common Source (CS) with Resistive Load • CS stage with diode-connected MOS load • CS with Current Source Load • CS with Triode Region Load • CS with source degeneration Chen Xiaofei CMOS Chapter3 17 3.2.2 CS stage with diode-connected MOS load A MOST can operate as a small-signal resistor if its gate and drain are shorted, called “diode-connected”. • what is the impedance of the following circuit seen from the source side of transistor M1? Chen Xiaofei CMOS Chapter3 18 The small-signal equivalent resistance of diodeconnected MOS load is = −gmvgs − gmbvb s + vs gds = gmvs + gmbvs + gdsvs = (gm + gmb + gds )vs Seen from source terminal, the small signal conductance is given by is yin = = ( g m + g mb + g ds ) vs or, the resistance is rin = 1 1 1 = ≈ ym g m + g mb + g ds g m + g mb Chen Xiaofei CMOS Chapter3 (1/gm << ro) 19 Gain (Av) Av = − gm1 1 gm1 1 =− gm2 1 + η gm2 + gmb2 (W / L)1 1 Av = − (W / L)2 1 + η un (W / L)1 Av = − up (W / L)2 Gain is independent of bias current! Chen Xiaofei CMOS Chapter3 20 Voltage swing constraint I D1 = I D 2 , ∴ ⎛W⎞ ⎛W ⎞ 2 un (VGS1 − VTH1 ) = up (VGS2 − VTH2 )2 ⎝ L ⎠1 ⎝ L ⎠2 un (W / L)1 | V GS2 − VTH2 | Av = − = up (W / L)2 (VGS1 − VTH1 ) This implies substantial voltage swing constraint. Chen Xiaofei CMOS Chapter3 21 Advantage of CS with diode-connected load • Advantage of CS with diode-connected load: linearity (W / L)1 1 Av = − (W / L)2 1 + η This equation imply: if the variation of ηwith the output voltage is neglected, the gain is independent of the bias currents and voltages (so long as the M1 stays in saturation. In other words, as the input and output signal levels vary, the gain remains relatively constant, indicating that the input-output characteristic is relatively linear. • Homework: Please do large-signal analysis of this circuit to determine the biasing range. Chen Xiaofei CMOS Chapter3 22 Large-signal analysis Vin − VTH ≤ Vout ≤ Vout max Vout Vout,max =VDD-VTH VTH ≤ Vin ≤ Vin ,max Vout=Vin-VTH Vout,swing At point P, Vout,min= Vin,max-VTH P I1 = VTH Vin,max’ Vin Vin,swing = 2 1 ⎛W ⎞ μnCOX ⎜ ⎟ (Vin ,max − VTH ) 2 ⎝ L ⎠1 1 μnCOX 2 I 2 = I1 = 1 μnCOX 2 ⎛W ⎞ 2 ⎜ ⎟ Vout ,min ⎝ L ⎠1 2 ⎛W ⎞ − V V ⎜ ⎟ ( GS 2 TH ) ⎝ L ⎠2 2 1 ⎛W ⎞ = μnCOX ⎜ ⎟ (VDD − Vout ,min − VTH ) 2 ⎝ L ⎠2 Chen Xiaofei CMOS Chapter3 23 Example: CS with any type of load Chen Xiaofei CMOS Chapter3 24 Example: CS with any type of load (cont.) • Loads in series : Chen Xiaofei CMOS Chapter3 25 Example: CS with any type of load (cont.) • Loads in parallel : Chen Xiaofei CMOS Chapter3 26 Example 3.3 What is the voltage gain of the amplifier ? Chen Xiaofei CMOS Chapter3 27 Common-Source Amplifier Table of Content • Common Source (CS) with Resistive Load • CS stage with diode-connected MOS load • CS with Current Source Load • CS with Triode Region Load • CS with source degeneration Chen Xiaofei CMOS Chapter3 28 3.2.3 CS with Current Source Load Av = −gm ro1 || ro2 Assuming ro2 large, ⎛ ⎜ ⎜ ox D ⎜ ⎝ W ⎟⎞ 1 ⎟ Av = −gmro1 = − 2 μn C I L ⎟⎠ 1 λI D Chen Xiaofei CMOS Chapter3 29 CS with Current Source Load (cont.) • Discussions: (1) Gain increasing: a) increase ro1 and ro2 , 1 ro1 = λID 1 λ∝ L ro ∝ so increase L is an effective method. b) increase gm1, g m1 = μnCox L ID W (VGS − VTH ) L Increasing W while keeping the Vov and L constant, gm1 increases. Note: increasing Vov is no use, as I D ∝ (VGS − VTH ) 2 Chen Xiaofei CMOS Chapter3 30 CS with Current Source Load (cont.) • (2) Design consideration: a) When requiring a large voltage gain, we usually design the device with a large L2 of load M2 and a large W1 of M1, large L1 is not must. b) If L1 is scaled by a factor n (>1), then W1 may need to be scaled proportionally as well. This is because, if W1 is not scaled, the overdrive voltage increases, limiting the output voltage swing. Chen Xiaofei CMOS Chapter3 31 CS with Current Source Load (cont.) • Classroom Exercise: Please do large-signal analysis of this circuit to determine the biasing range. • Advantage of CS with current source Load : the output impedance and the minimum required VDS of M2 are less strongly coupled than the value and voltage drop of a resistor. Chen Xiaofei CMOS Chapter3 32 Common-Source Amplifier Table of Content • Common Source (CS) with Resistive Load • CS stage with diode-connected MOS load • CS with Current Source Load • CS with Triode Region Load • CS with source degeneration Chen Xiaofei CMOS Chapter3 33 3.2.4 CS with Triode Region Load Av = −gm RON2 RON 2 = Chen Xiaofei 1 μ pC CMOS Chapter3 ⎛W ox ⎜⎜ ⎝ L ⎞ ⎟⎟ ⎠2 (VDD − Vb − | VTHP |) 34 Common-Source Amplifier Table of Content • Common Source (CS) with Resistive Load • CS stage with diode-connected MOS load • CS with Current Source Load • CS with Triode Region Load • CS with source degeneration Chen Xiaofei CMOS Chapter3 35 CS with source degeneration • • • • • • • • • The transconductance of the circuit---Gm The small-signal equivalent circuit( Assuming λ =γ = 0 ) Linearity discussion Intuitive analysis and large-small characteristic Example 3.5 Gm ( λ ≠ 0 ,γ ≠ 0 ) Output Resistance Gain (Av) Example 3.6 Chen Xiaofei CMOS Chapter3 36 3.2.5 CS with source degeneration • In some applications, the square-law dependence of the drain current upon the overdrive voltage introductions excessive nonlinearity, making it desirable to “soften” the device characteristic. • In 3.2.2, we noted the linear behavior of a CS stage using a diode-connected load, but this topology has substantial voltage swing constraint. • Some other method? Chen Xiaofei CMOS Chapter3 37 The transconductance of the circuit---Gm •Define: Gm----the transconductance of the circuit when the output is shorted to ground. Gm = ∂V ∂I D ∂I ∂V = D ⋅ GS = g m GS ∂Vin ∂VGS ∂Vin ∂Vin VGS = Vin − I D RS ∂VGS ∂I = 1 − D RS = 1 − Gm RS ∂Vin ∂Vin Gm = g m (1 − Gm RS ) Gm = gm 1 + g m RS g m RD AV = −Gm RD = − 1 + g m RS Chen Xiaofei CMOS Chapter3 38 The small-signal equivalent circuit If we ignore λ and γ : Chen Xiaofei CMOS Chapter3 39 Linearity discussion • With source degeneration, the transconductance is more linear !! As Rs increases, Gm becomes a weaker function of gm and hence the drain current. Chen Xiaofei CMOS Chapter3 40 Intuitive analysis and large-small characteristic − g m RD RD Av = =− 1 + g m RS 1 / g m + RS Drain current and transconductance of a CS device (a) without and (b) with source degenaration. Chen Xiaofei CMOS Chapter3 41 Example 3.5 • Assuming λ =γ = 0 for both M1 and M2. Calculate the small signal gain. Chen Xiaofei CMOS Chapter3 42 Example 3.5 (cont.) • Recall the result from common source stage with source degeneration : Chen Xiaofei CMOS Chapter3 43 Gm of CS with source degeneration • What is the transconductance of the circuit (Gm) if we do not ignore λand γ ? Chen Xiaofei CMOS Chapter3 44 Gm of CS stage with source degeneration (cont.) or, Chen Xiaofei CMOS Chapter3 Gm = g m ro Rs + [1 + ( g m + g mb ) Rs ]ro 45 Output Resistance •Another importance consequence of source degeneration is the increase of the output impedance of the stage. rout = [1 + ( g m + g mb )ro ]Rs + ro Chen Xiaofei CMOS Chapter3 46 Gain (Av) Av = vout g m ro RD =− vin RD + Rs + ro + ( g m + g mb ) Rs ro Av = −Gm ( RD || rout ) Lemma: In a linear circuit, the voltage gain is equal to -GmRout Chen Xiaofei CMOS Chapter3 47 Example 3.6 Av = −Gm RD || rout gm ro Gm = RS + [1+ (gm + gmb )RS ]ro RD || rout = ∞ || {[1 + ( g m + g mb )ro ]Rs + ro } Av = −gmro ! Why? Please explain this result. Chen Xiaofei CMOS Chapter3 48 Homework2 • Exercises: 3.1 3.2 3.3 3.12 3.14 • Reading: Chapter3 3.3 Chen Xiaofei CMOS Chapter3 49 Table of Content • Analog Design • Common-Source Amplifier • Source Followers • Common-Gate Amplifier • Cascode Chen Xiaofei CMOS Chapter3 50 3.3 Source Follower (Common Drain Amplifiers) • Our analysis of the CS stage indicates that, to achieve a high voltage gain with limited supply voltage, the load impedance must be as large as possible. If such a stage is to drive a lowimpedance load, then a “buffer” must be placed after the amplifier so as to drive the load with negligible loss of the signal level. The source follower (also called the commondrain stage) can operate as a voltage buffer. • The common drain stage exhibits high input impedance and low output impedance. After an analysis of relevant port characteristics, we will discuss some potential applications and also drawbacks of this circuit. Chen Xiaofei CMOS Chapter3 51 Source Follower (cont.) Input terminal: gate; output terminal: source. Chen Xiaofei CMOS Chapter3 52 Large signal behavior • Large signal behavior • • • Chen Xiaofei CMOS Chapter3 When Vin<VTH, M1 is off, and Vout is 0. When Vin>VTH, M1 turns on in saturation. As Vin increases further, Vout follows Vin with a difference of VGS. When Vin increases to a certain voltage (exceeding VDD), M1 enters triode region, the output voltage flattens out and clips at VDD. 53 Small signal analysis • Small signal analysis Chen Xiaofei CMOS Chapter3 54 Small signal analysis (cont.) Chen Xiaofei CMOS Chapter3 55 Small signal analysis (cont.) Av = gm 1 gm + RLtot RLtot = Rs 1 1 g ds g m b • Interesting cases – Rs→∞, ro→∞, gmb=0 • PMOS, source tied to body, ideal current source – Rs→∞, ro→∞, gmb≠0 • NMOS, ideal current source) (typically ≅ 0.8) – ro→∞, gmb=0, Rs finite • PMOS, source tied to body, load resistor Chen Xiaofei CMOS Chapter3 56 Small Signal Output Resistance • Small signal diagram for calculating output resistance Chen Xiaofei CMOS Chapter3 57 Small Signal Output Resistance (cont.) Chen Xiaofei CMOS Chapter3 58 Application 1: Level Shifter • Output quiescent point is roughly VTH+Vov lower than input quiescent point Chen Xiaofei CMOS Chapter3 59 Application 2: Buffer • Low frequency voltage gain of the above circuit is ~gmRbig – Would be ~gm(Rsmall||Rbig) without CD buffer stage Chen Xiaofei CMOS Chapter3 60 Issues • Several sources of nonlinearity – VTH is a function of Vo (NMOS, without S to B connection) – ID and thus Vov changes with Vo ! Gets worse with small RL • Reduced input and output voltage swing – Consider e.g. VDD=1V, VTH=0.3V, VOV=0.2V ! CD buffer stage consumes 50% of supply headroom! – In low VDD applications that require large output swing, using a CD buffer is often not possible – CD buffers are more frequently used when the required swing is small ! E.g. pre-amplifiers or LNAs that turn μV into mV at the output Chen Xiaofei CMOS Chapter3 61 Homework 3 • Exercises: 3.15 • Reading: Chapter3 3.4 Chen Xiaofei CMOS Chapter3 62 Table of Content • Analog Design • Common-Source Amplifier • Source Followers • Common-Gate Amplifier • Cascode Chen Xiaofei CMOS Chapter3 63 3.4 Common Gate Stage Fig.1 CG stage with (a) direct coupling at input (b) capacitive coupling at input. • In a common-gate amplifier, the input signal is applied to the source terminal, as is shown in Fig.1. It senses the input at the source and generate the output at the drain. The gate is connected to a dc voltage to establish proper operating conditions. Note that in Fig.1(b) the bias current of M1 flows through the input signal source. Chen Xiaofei CMOS Chapter3 64 Large signal behavior • • When Vin>VB-VTH, M1 is off, and Vout is VDD. As Vin decreases, so does Vout, M1 is in saturation until • After that, M1 is driven into the triode region. Chen Xiaofei CMOS Chapter3 65 Small signal analysis (1)---- CG Current Transfer Define: gm’ = gm + gmb Chen Xiaofei CMOS Chapter3 66 CG Current Transfer (cont.) Chen Xiaofei CMOS Chapter3 67 Small signal analysis (2)---- Voltage Gain vout ( g m + g mb )ro + 1 = RD Av = vin ro + ( g m + g mb )ro RS + RS + RD Chen Xiaofei CMOS Chapter3 68 Small Signal Input Resistance RD itst + ro [itst − ( g m + g mb )vts t ] = vtst Thus, rin = vtst RD + ro = itst 1 + ( g m + g mb )ro RD 1 ≈ (1 + ) (If (gm+gmb)ro>>1) ro ( g m + g mb ) Two interesting cases: Chen Xiaofei – RD<<ro: rin ≈ 1 ( g m + g mb ) – RD>>ro: rin ≈ RD ( g m + g mb )ro CMOS Chapter3 69 Small Signal Output Resistance rout = [1 + ( g m + g mb )ro ]RS + ro (Very high if (gm+gmb)RS>>1 Chen Xiaofei CMOS Chapter3 !) 70 CG Summary • Current gain is unity up to very high frequencies • Input impedance is very low – At least when the output is also terminated with some reasonable impedance • Can achieve very high output resistance • In summary, a common gate stage is ideal for turning a decent current source into a much better one – Seems like this is something we can use to improve our common source stage • Which is indeed nothing but a decent (voltage controlled) current source Chen Xiaofei CMOS Chapter3 71 Homework 4 • Reading: Chapter3 3.4 Chen Xiaofei CMOS Chapter3 72 Table of Content • Analog Design • Common-Source Amplifier • Source Followers • Common-Gate Amplifier • Cascode Chen Xiaofei CMOS Chapter3 73 Overview • We will cover different cascode amplifiers, including – 1. Simple cascode amplifier – 2. Multi-level cascode amplifier – 3. Folded cascode amplifier Chen Xiaofei CMOS Chapter3 74 Simple cascode amplifier • Large signal behavior (Vin fixed to VG1, Vout (VDS) sweeping from 0 to 3V) Simple cascode amplifier Chen Xiaofei Region I: M1B and M2B both in triode; Region II, M1B in saturation, M2B in triode; Region III, M1B and M2B both in saturation CMOS Chapter3 75 Small Signal Output Resistance rout = [1 + ( g m 2 + g mb 2 )ro 2 ]ro1 + ro 2 ≈ [ro1ro 2 ( g m 2 + g mb 2 )] Chen Xiaofei CMOS Chapter3 76 Transconductance Gm iout iout = g m1vin Chen Xiaofei ro1 = g m1vin 1 ro1 + ro 2 g m 2 + g mb 2 Gm = ro1 1 ro1 + ro 2 g m 2 + g mb 2 g m1ro1[ro 2 ( g m 2 + g mb 2 ) + 1] ro1ro 2 ( g m 2 + g mb 2 ) + ro1 + ro 2 = g m1[1 − CMOS Chapter3 g ds1 ] g m 2 + g mb 2 + g ds 2 + g ds1 77 Transconductance Gm (cont.) • Observation: Compared with a single-transistor common source amplifier with a transconductance of |Gm|=gm1 (Note that Gm is the transcoducance of the amplifier, and gm is the transcoducance of the transistor), the transcoductance of cascode amplifier is slightly less, whose transconductance Gm is given by g ds1 Gm = g m1[1 − ] = (90% ~ 99%) g m1 g m 2 + g mb 2 + g ds 2 + g ds1 • DC voltage gain (when the output is open) Av = −Gm rout = − g m1ro1[( g m 2 + g mb 2 )ro 2 + 1] Chen Xiaofei CMOS Chapter3 78 Multi-level cascode amplifier • Triple cascode amplifier rout = ( g m 3 + g mb 3 ){[1 + ( g m 2 + g mb 2 )ro 2 ]ro1 + ro 2 }ro 3 + ro 3 g ds1 ] Gm ≈ − g m1[1 − g m 2 + g mb 2 + g ds 2 + g ds1 Av = g m1ro1[1 + ( g m 2 + g mb 2 )ro 2 ][( g m 3 + g mb 3 )ro 3 + 1] Chen Xiaofei CMOS Chapter3 79 Supply Headroom Issue • Even if we adjust VB such that VDS1 is small, adding a cascode reduces the available signal swing • This can be a big issue when designing circuits with VDD ≅ 1V – Typically need each VDS > ~0.2V Chen Xiaofei CMOS Chapter3 80 Folded-cascode amplifier Fig.1 (a) Simple folded cascode, (b) folded cascode with proper biasing, (c) folded cascode with NMOS input • Why choose folded-cascode amplifier instead of telescopic configuration? – More freedom to choose the DC input voltage at vin (such as Fig. 1(a)). – Convenience in shorting the input and the output in feedback configurations. Chen Xiaofei CMOS Chapter3 81 Large signal behavior Fig. 2 Large-signal characteristics of folded cascode • Suppose in Fig.1(b), I1 is the current flowing through M3 and is equal to the sum of ID1 and ID2. – Vin > VDD-|VTH1|, M1 is off and M2 carries all of I1, yielding Vout=VDD-I1RD. – For Vin<VDD-| VTH1 |, M1 turns on in saturation. – As Vin drops, ID2 decreases further, falling to zero if ID1=I1 (Vin=Vin1). – If Vin<Vin1, M1 enters triode. Chen Xiaofei CMOS Chapter3 82 Small signal Analysis • The small-signal operation is as follows: If vin becomes more positive, |id1| decreases, forcing id2 to increase and hence vout to drop. The voltage gain and output resistance of the circuit can be obtained as calculated for the telescopic-cascode. This approximation approach is sufficient, because, in fact, current source Iss is a MOS constant current source and it’s output resistance is very large, while CG stage’s input resistance is relatively small, thus the shunting of Iss from the small-signal current can be ignored. Chen Xiaofei CMOS Chapter3 83 Folded-cascode amplifier summary • Why choose folded-cascode amplifier instead of telescopic configuration? – More freedom to choose the DC input voltage at vin (such as Fig. 1(a)). – Convenience in shorting the input and the output in feedback configurations. • Disadvantages: -- The total bias current in folded-cascode amplifier must be higher than that in telescopic configuration to achieve comparable performance. -- Other disadvantages will be discussed in Chapter 6. Chen Xiaofei CMOS Chapter3 84 Homework 5 • Exercises: 3.19 (a) (d) 3.20 (a) (b) (c) 3.21 (a) (b) (c) (d) 3.24 • Reading: Chapter4 Chen Xiaofei 4.1 4.2 CMOS Chapter3 85