FDN327N
N-Channel 1.8 Vgs Specified PowerTrench MOSFET
General Description
Features
This 20V N-Channel MOSFET uses Fairchild’s high
voltage PowerTrench process. It has been optimized for
power management applications.
• 2 A, 20 V.
RDS(ON) = 70 mΩ @ VGS = 4.5 V
RDS(ON) = 80 mΩ @ VGS = 2.5 V
RDS(ON) = 120 mΩ @ VGS = 1.8 V
Applications
• Low gate charge (4.5 nC typical)
•
Load switch
•
Battery protection
• Fast switching speed
•
Power management
• High performance trench technology for extremely
low RDS(ON)
D
D
S
S
G
TM
SuperSOT -3
G
Absolute Maximum Ratings
Symbol
o
TA=25 C unless otherwise noted
Ratings
Units
VDSS
Drain-Source Voltage
Parameter
20
V
VGSS
Gate-Source Voltage
±8
V
ID
Drain Current
(Note 1a)
2
A
PD
Power Dissipation for Single Operation
(Note 1a)
0.5
(Note 1b)
0.46
– Continuous
– Pulsed
TJ, TSTG
8
W
–55 to +150
°C
(Note 1a)
250
°C/W
(Note 1)
75
°C/W
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
RθJC
Thermal Resistance, Junction-to-Case
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
327
FDN327N
7’’
8mm
3000 units
2001 Fairchild Semiconductor Corporation
FDN327N Rev C (W)
FDN327N
October 2001
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min
Typ
Max Units
Off Characteristics
ID = 250 µA
BVDSS
∆BVDSS
∆TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V,
Zero Gate Voltage Drain Current
VDS = 16 V,
VGS = 0 V
1
µA
IGSSF
Gate–Body Leakage, Forward
VGS = 8 V,
VDS = 0 V
100
nA
IGSSR
Gate–Body Leakage, Reverse
VGS = –8 V,
VDS = 0 V
–100
nA
1.5
V
On Characteristics
20
ID = 250 µA,Referenced to 25°C
V
12
mV/°C
(Note 2)
VDS = VGS,
ID = 250 µA
VGS(th)
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
VGS = 4.5 V,
ID = 2.0 A
VGS = 2.5 V,
ID = 1.9 A
VGS = 1.8 V,
ID = 1.6 A
VGS = 4.5V, ID = 2 A, TJ = 125°C
VGS = 4.5V,
VDS = 5 V
gFS
Forward Transconductance
VDS = 5V,
ID = 2 A
VDS = 10 V,
f = 1.0 MHz
V GS = 0 V
0.4
ID = 250 µA,Referenced to 25°C
0.7
–3
40
49
65
55
mV/°C
70
80
120
103
8
mΩ
A
11
S
423
pF
87
pF
48
pF
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
td(off)
(Note 2)
6
12
ns
6.5
13
ns
Turn–Off Delay Time
14
29
ns
tf
Turn–Off Fall Time
2
4
ns
Qg
Total Gate Charge
4.5
6.3
nC
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VDD = 10 V,
VGS = 4.5 V,
VDS = 10 V,
VGS = 4.5 V
ID = 1 A,
RGEN = 6 Ω
ID = 2 A,
0.89
nC
0.95
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain–Source Diode Forward Current
VSD
Drain–Source Diode Forward
Voltage
VGS = 0 V,
IS = 0.42 A
(Note 2)
0.6
0.42
A
1.2
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 250°C/W when mounted on a
0.02 in2 pad of 2 oz. copper.
b) 270°C/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
FDN327N Rev C (W)
FDN327N
Electrical Characteristics
FDN327N
Typical Characteristics
2
16
VGS = 4.5V
RDS(ON) , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
2.5V
ID, DRAIN CURRENT (A)
3.0V
2.0V
12
1.8V
8
4
0
VGS = 1.8V
1.8
1.6
2.0V
1.4
2.5V
1.2
3.0V
3.5V
0.8
0
0.5
1
1.5
2
2.5
3
3.5
0
4
8
VDS, DRAIN-SOURCE VOLTAGE (V)
16
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.18
1.6
ID = 2A
VGS = 4.5V
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
12
ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
1.4
1.2
1
0.8
0.6
ID = 1A
0.14
0.1
TA = 125 oC
0.06
o
TA = 25 C
0.02
-50
-25
0
25
50
75
100
125
150
1
2
o
TJ, JUNCTION TEMPERATURE ( C)
3
4
5
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
12
o
TA =-55 C
VGS = 0V
o
25 C
IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
I D, DRAIN CURRENT (A)
4.5V
1
125oC
9
6
3
10
TA = 125oC
1
25oC
0.1
o
-55 C
0.01
0.001
0
0.0001
0.5
1
1.5
2
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
2.5
0
0.2
0.4
0.6
0.8
1
1.2
1.4
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDN327N Rev C (W)
FDN327N
Typical Characteristics
5
VGS , GATE-SOURCE VOLTAGE (V)
600
VDS = 5V
ID = 2A
f = 1MHz
VGS = 0 V
10V
500
4
CISS
CAPACITANCE (pF)
15V
3
2
1
400
300
200
COSS
100
CRSS
0
0
0
2
4
6
0
4
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
P(pk), PEAK TRANSIENT POWER (W)
ID, DRAIN CURRENT (A)
RDS(ON) LIMIT
100µs
1ms
10ms
1
100ms
1s
DC
VGS = 4.5V
SINGLE PULSE
0.1
o
RθJA = 270 C/W
o
TA = 25 C
16
20
20
SINGLE PULSE
RθJA = 270°C/W
TA = 25°C
15
10
5
0
0.01
0.1
1
10
100
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
12
Figure 8. Capacitance Characteristics.
100
10
8
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA (t) = r(t) + RθJA
RθJA = 270 °C/W
0.2
0.1
0.1
0.05
P(pk)
0.02
t1
0.01
0.01
0.001
0.0001
t2
SINGLE
PULSE
0.001
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
0.01
0.1
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDN327N Rev C (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E2CMOSTM
EnSignaTM
FACT™
FACT Quiet Series™
FAST 
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench 
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER 
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET 
VCX™
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into
support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose
be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance
support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative or
In Design
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
Preliminary
First Production
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
No Identification Needed
Full Production
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4