A
A
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B
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Wired OR

Contents
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Introduction
NMOS Logic
Resistive Load
Saturated Enhancement Load
Linear Enhancement Load
Depletion Load
Some Gates
Transient in NMOS Circuit
Pseudo-NMOS
`
`
CMOS Logic
•
•
Static CMOS Logic Gates
•
•
•
• NOT
NAND
NOR
Realization of More Complicated Gate Circuits
Transmission Gates Family
NMOS Only Switch
CMOS
Differential Cascode Voltage Switch Logic
Rules of Thumb
Summary

Introduction
` The MOS inverter is the basic circuit exhibits all of the essential features of MOS Logic. Extension of MOS inverter concepts to NOR and NAND Gate is very simple. In this lecture we will analysis for VTC, NM, PD,… . Both NMOS and CMOS circuits are considered. Digital MOS circuits can be classified into two categories:
`
Static Circuits: require no clock or other periodic signal for operation. Clocks are required for static circuit in sequential logic
`
Dynamic Circuits: require periodic clock signals, synchronized with data signals, for proper operation even in combinational logic

NMOS Logic
` Resistive Load
W
L
VoL
P
RL
Area
C
Speed
Vo
Vdd
V
OL o
Vi

NMOS Logic
` Resistive Load Properties
`
N transistors + Load
`
V
OH
`
V
OL
= Vdd
= Vdd ( rN/(rN + RL))
`
Assymetrical response
`
Static power consumption
` t
PL
= 0.69RLCL

NMOS Logic
` Saturated Enhancement Load
T 2
Vo
V
OH
δ
Vo
δ
Vi
= −
1
∝ β
R
V
OL o
V
IL
V
IH
Vi
+
Vdd
Vi
+
Vdd
M2
Vo
M1

NMOS Logic
` Saturated Enhancement Load
`
V
IL
V
IL
≥
V
T1
⇒
M1, M2 are in saturation
⇒
K (Vgs1 V )
1 T1
2 =
2
−
T 2 T 2
≈
Cte
Vgs1
=
Vi, Vgs2
=
Vdd
−
Vo
⇒
δ
Vo
δ
Vi
, 1
R
⇒
δ
Vo
δ
Vi
≠ −
1
⇒
V
I L
≈
V
T 1
Vo
V
OH
V
OL o
V
IL
V
IH
δ
Vo
δ
Vi
= −
1
∝ β
R
Vi

NMOS Logic
` Saturated Enhancement Load
`
V
OL
• V
OL is difficult to obtain because it is the output voltage when input equal to
V
OH
, the resulting expression is a fourth order polynomial!
Vo
V
OH
Vo
Vi
1
R
V
OL o
V
IL
V
IH
Vi

NMOS Logic
` Saturated Enhancement Load
`
V
IH
• M1 is in triode and M2 in saturation
δ
Vo
δ
Vi
= −
δ i
1
δ
Vi
( rds1 rds2 i
2
⇒
=
1
2
δ i
1
δ
Vi
K (Vgs2 V )
2
−
T 2
2
=
K Vo
1
) rds1 rds2
≈ rds1
=
δ
Vo
δ i
1
= ⎡
⎣
(
−
)
− 2 i K Vgs1 V Vo Vo 2
1 1 T1
⎦
⎤
⇒
1
( −
T1
−
Vo
)
⇒
δ
Vi
⇒
Vo
=
= −
K Vo
1
K (Vgs1 V
1
−
T1
−
Vo)
Vi
−
V
T1
Vi
δ i
1
δ
Vo
δ
Vo
=
V
IH
=
⇒
2
V
IH
−
V
T1
2
=
Vo
= −
1

NMOS Logic
` Saturated Enhancement Load
`
V
IH
• M1 is in triode and M2 in saturation i
1
K
1
(
V
IH
V
IH
V
T1
)
Vo
Vo 2
2(Vdd
V )
T 2
3
R
1
V
T1
1
2
K (Vdd
2
Vo
V )
T 2
2

NMOS Logic
` Saturated Enhancement Load
`
NM
NML
=
V
IL
−
V
OL
≈
Some tenth of volt
NMH
=
V
OH
−
V
IH
=
Vdd
−
V
T 2
−
V
IH
`
Power
P disH
0, P disL
I Vdd d
P dis
1 2 I Vdd d

NMOS Logic
` Linear Enhancement Load
VGG
Vdd
V
T 2
M2 is in triode
+

NMOS Logic
` Linear Enhancement Load
`
VTC
• By this circuit the V
OH can be increased (or Vdd
Vo can be decreased Vdd because Vo max
= Vdd )
V
OL o
V
IL
V
T
V
IH
Vdd
Vi

NMOS Logic
` Linear Enhancement Load
`
V
IL
• M1 is in saturation and M2 in triode
δ
Vo
δ
Vi
= −
δ i
1
δ
Vi rds2
= −
δ i
1
δ
Vds2
δ
Vi
δ i
1
2
=
2
( −
T 2
) − 2 i K Vgs2 V Vds2 Vds2 2
δ i
2
δ
Vds2
=
K
2
(
VGG
−
Vo
−
V
T 2
−
Vds2
) i
1
=
1
δ i
1
δ
Vi
δ
Vo
2
=
δ
Vi
K (Vi
1
−
V )
T1
( −
V
T1
2
)
−
K (Vi
1
−
V )
T1
K (VGG
−
Vo
−
V
T 2
−
Vds2)
⇒
V
IL
= f (Vo)
`
V
IH
• M1 and M2 are in triode rds2
→ rds1 rds2

NMOS Logic
` Linear Enhancement Load
`
Disadvantages:
• More chip area is required (since an extra voltage source VGG)
•
• Additional interconnection on the chip is needed
VGG
Vi
+
Vdd
M2
Vo
M1

NMOS Logic
`
` Ion implantation processing step is needed to create depletion device, but overcome the disadvantages of the previous circuit
+
Vdd
Vi
M2
Vo
M1

NMOS Logic
`
` VTC
Vi
=
Low
⇒ =
1
0, M1 in cutoff
⇒ = =
1 i
2
0 if M2 is in saturation then i
2
=
K
2
2
−
T 2
2 = ⇒ >
2
0
` Therefore M2 is in triode
Vo
Vdd
V
OL o
V
IL
V
T
V
IH
Vdd
Vi

NMOS Logic
`
` V
OL
, V
IL
, V
IH i
K
1
⎡
⎣
δ
Vo
δ
Vi
(
V
OH
−
V
T1
)
V
OL
−
V
OL
2
2 ⎦
⎤ =
K
2
2
K (Vgs1 V )
1
−
T1
K (Vgs2 V
T 2
−
Vds2)
−
T 2
2 ⇒
V
OL
=
?
= −
1, i
1
= ⇒
V
IL
=
?
1
=
K
1
⎡
⎣
(
V
IH
−
V
T1
) − ⎤
⎦ i
K
2
2
−
δ
δ
Vo
Vi
= − ⇒
V
IH
=
?

NMOS Logic
`
` In all previous structures which different only in load, the following Gates can be implemented. Note that the
NMOS Gates are not available as separately packaged individual circuits, but they are used extensively in LSI systems
• NOR Gates
• NAND Gates

NMOS Logic
`
` NOR Gate
A M1 B
+
Vdd
RL
M2
Y
A
B
Y

NMOS Logic
`
` NAND Gate
+
Vdd
A
RL
Y
M2
B M1
A
B
Y

NMOS Logic
`
` In NOR Gate two transistors are paralleled but in
NAND Gate two transistors are in series. Because of the need for increased area when adding NAND inputs,
NAND logic with more than 2 inputs is not economically be attractive in NMOS. NOR logic is preferable
` In NAND the M2 has body effect
` In NOR we need the less interconnection (this can be shown from layout)

NMOS Logic
` Transient in NMOS Circuits
`
Saturated Enhancement Load
C tot
=
C
L
+
Ceq
+
Ceq
Vi
+
Vdd
M2
+
Vdd
C
Cgs2
Cgd1
M1
C
CL
Vo
+
Cgs2
+
2
Cgd 1

NMOS Logic
`
Super Buffer (1)
`
If Fan-out is very large then
C tot will be large. For reduction it and decrease the switching time the Super
Buffer circuit is used
`
In this circuit if Vi is Low state then V1 will be high very more rapid than Vo.
Thus the Gate of M2 is in high state very rapidly.
Therefore M2 will be in saturation which result the reduction of switching time
(t on
)
Vi
M4
V1
+
Vdd
M1
+
Vdd
M2
M3
Vo
Super Buffer (1) Circuit

NMOS Logic
` Super Buffer (2)
`
It is non-Inverting
`
Describe the operation of this circuit!
Vi
+
Vdd
M4
V1
M1
+
Vdd
M2
M3
Vo
Super Buffer (2) Circuit

NMOS Logic
`
` What makes a circuit fast?
• I = C dV/dt -> tpd
∝
(C/I) DV
• low capacitance
• high current
• small swing
` Logical effort is proportional to C/I
` PMOS are the enemy!
• High capacitance for a given current
`
Can we take the PMOS capacitance off the input?
`
Various circuit families try to do this…

NMOS Logic
`
` In the old days, NMOS processes had no PMOS
• Instead, use pull-up transistor that is always ON
` In CMOS, use a PMOS that is always ON
• Make PMOS about ¼ effective strength of pulldown network

NMOS Logic
` Pseudo-NMOS
`
Uses a p-type as a resistive pullup, n-type network for pulldowns

NMOS Logic
` Pseudo-NMOS Characteristics
` Compared to CMOS, this family has higher packing density, since for n inputs only n+1 transistors are required
`
The main disadvantages with
Pseudo-NMOS Gates is the large static power dissipation that occurs whenever a pulldown path is activated
`
Has much smaller pullup network than static gate
`
Pulldown time is longer
Vi because pullup is fighting
+
Vdd
M2
Vo
M1

NMOS Logic
` Pseudo-NMOS Output Voltages
`
Logic 1 output is always at Vdd
`
Logic 0 output is above Vss
`
V
OL
= 0.25 (Vdd - Vss) is one plausible choice
Vi
+
Vdd
M2
Vo
M1

NMOS Logic
` Pseudo-NMOS Design Topics
`
For logic 0 output, pullup and pulldown form a voltage divider
`
Must choose n, p transistor sizes to create effective resistances of the required ratio
` Effective resistance of pulldown network must be computed in worst case— series n-types means larger transistors
Vi
+
Vdd
M2
Vo
M1

NMOS Logic
` Pseudo-NMOS Transistor Ratio Calculation
`
MOSFET sizing is important
`
Need to have reasonable W/L ratios for circuit to work correctly
`
V
OL
>VSS but must be low enough to turn off/on next
MOSFET in the chain
`
Static current drain when “on”
`
Vout is a function of the number of parallel and series N channels in the pull down network

NMOS Logic
` Pseudo-NMOS Transistor Ratio Calculation
`
For single supply
V
OH
=
Vdd, For the worst case one NMOS to be on
K n
⎣
⎢
⎡
(
Vdd
−
V
Tn
)
V
OL
−
V
OL
2
2
V
OL
=
K (Vdd n
−
V ) 1
T
−
1
−
⎣
⎢
⎢
⎡
⎥
⎤
⎦
=
K
K p
K
2 n
2
P
⎦
⎥
⎥
⎤
(
Vdd
−
V
TP
Assuming that V
T
=
V
Tn
=
V
Tp
)
2
V
OL
0 K p
<<
K n
A B C
+
Vdd
D
Y

NMOS Logic
` Pseudo-NMOS VTC ( W/L n
=1)
3.0
2.5
2.0
W/L p
= 4
1.5
W/L p
= 2
1.0
0.5
0.0
0.0
W/L p
= 0.5
W/L p
= 0.25
0.5
1.0
W/L p
= 1
1.5
2.0
2.5
V in
[V]

NMOS Logic
`
` Design for unit current on output
` PMOS fights NMOS inputs f
Y

NMOS Logic
`
` Pseudo-NMOS draws power whenever Y = 0
• Called static power P = I•VDD
• A few mA / gate * 1M gates would be a problem
• This is why NMOS went extinct!
` Use Pseudo-NMOS sparingly for wide NORs
` Turn off PMOS when not in use en
A B C
Y

NMOS Logic
` Pseudo-NMOS ( NAND) Layout Example
In1 In2 In3 In4
Out

CMOS Logic
`
` All of the circuits described in the previous sections have a large static power dissipation. This disadvantage can be overcome by using Static CMOS
Logic Family

CMOS Logic
`
` NOT
Vi
+
Vdd
M2
Vo
M1

CMOS Logic
`
` Two inputs NAND
B
A
+
Vdd
M3 M4
Y
M2
M1

CMOS Logic
`
` Two inputs NOR
A
B
+
Vdd
Y

CMOS Logic
`
` NAND is more suitable for CMOS because by suppose the equal W/L for NMOS and PMOS transistors, the
PMOS transistor has more resistance respect to
NMOS, therefore it is better to design circuit by paralleling the PMOS and cascading the NMOS
` The better Technology for digital circuit is N-Well , because in this Technology the NMOS transistors are made in the Sub. Which result better characteristic for transistor

CMOS Logic
` Realization of More Complicated Gate Circuits
` a) Y = A(B+C)
` It can be implemented in three levels:
• Gate Level
• Transistor Level
• Layout Level

CMOS Logic
` Realization of More Complicated Gate Circuits
` a) Y = A(B+C)
• Gate Level
– It consists of 10 transistors, 4 transistors for NOR, 2 for NOT and 4 for
NAND
A
B Y
C

CMOS Logic
` Realization of More Complicated Gate Circuits
` a) Y = A(B+C)
• Transistor Level
– It need only 6 transistors
B
+
Vdd
A
C
A
B C
Y

CMOS Logic
` Realization of More Complicated Gate Circuits
` a) Y = A(B+C)
• Layout Level
– By proper construction of layout, the parasitic capacitors are also reduced and area can be saved

CMOS Logic
` Realization of More Complicated Gate Circuits
` b) XNOR (Y = AB + AB)
• Gate Level
– 16 transistors are needed
A
Y
B

CMOS Logic
` Realization of More Complicated Gate Circuits
` b) XNOR (Y = AB + AB)
+
Vdd
• Transistor Level (1)
» How many transistors are
» needed?
A B
B
B
A
A
Y
=
AB
+
AB
B
A

CMOS Logic
` Realization of More Complicated Gate Circuits
` b) XNOR
+
Vdd
• Transistor Level (2)
– Previous circuit can be simplified by eliminating two wiring lines A B
B
B
A
A
Y
=
AB AB
B
A

CMOS Logic
` Realization of More Complicated Gate Circuits
` b) XNOR
• Transistor Level (3)
– In this circuit we have static power dissipation in the state of (A=0,B=1) or (A=1,B=0)
+
Vdd
M3
Y
=
AB AB
M1 M2
A B

CMOS Logic
` Realization of More Complicated Gate Circuits
` b) XNOR
• Transistor Level (4) (For less dissipation)
– Note to the state of A = B = Vdd
A
0
0
Vdd
Vdd
B
0
Vdd
0
Vdd
Y
Vdd
0
0
Vdd-Vth
M1
M4
+
Vdd
M3
Y
=
AB AB
M2
A B

CMOS Logic
` Realization of More Complicated Gate Circuits
` c) XOR
• As Previous the Source and Drain of M3 (or M4) are replaced by each other in different states, for example in state of A=0, B=0 the b connection of M3 is Source
A B Y
+
Vdd
0
0
Vdd
0
Vdd
0
Vth
Vdd-Vth
Vdd
A
M2
M1
B a a b
M3
Y
=
AB AB
M4 b
Vdd Vdd 0
A

CMOS Logic
` Realization of More Complicated Gate Circuits
` d) Tri-State Outputs
• A floating state at the output is needed
– Non-Inverting
En 1 Y
=
D
⎩ En 0 Y
=
Hi
−
Z
En
D Y
En
D
+
Vdd
Y

CMOS Logic
` Realization of More Complicated Gate Circuits
` d) Tri-State Outputs
• A floating state at the output is needed
– Inverting
En 1 Y
=
Hi
−
Z
⎪⎩ En 0 Y
=
D
En
D Y
En
D
+
Vdd
Y

CMOS Logic
` Realization of More Complicated
Gate Circuits
` e) Schmitt Trigger
• M3 and M6 have minimum sized geometries
• With Vin = 0 , the transistors M1 and
M2 will be on but conducting negligible Drain current since M4 and M5 are off
⇒
Vy
≈
Vx
≈
Vdd
Vy
≈
Vdd
⇒
M6
≅ on
⇒
Vz
=
Vy
−
V
TN
Vin
+
Vdd
Vx
M1
M3
M2
Vy
M4
Vz
M5
M6
Y
+
Vdd

CMOS Logic
` Realization of More Complicated
Gate Circuits
` e) Schmitt Trigger
• When Vin rise to V
TN
, M5 turns on, but M4 is off. M5 and M6 form an
NMOS amplifier. Thus as Vin rises,
Vz is falling and in the certain voltage M4 turns on. With both M4 and M5 conducting, Vy rapidly goes to zero turning off M6. With Vy=0, M3 turns on, which aids in turning off
M2 as Vx goes from Vdd to Vy-V
TP
• As Vin decrease from Vdd to zero the operation is essentially similar.
But now M1 turns on, in different voltage and …
Vin
+
Vdd
Vx
M1
M3
M2
Vy
M4
Vz
M5
M6
Y
+
Vdd

CMOS Logic
` Transmission Gates Family
`
Use pass transistors like switches to do logic
`
Inputs drive diffusion terminals as well as gates
`
N transistors instead of 2N
`
No static power consumption
`
Ratioless
`
Bidirectional

CMOS Logic
` Transmission Gates Family
`
NMOS Only Switch
Vdd X
In
3.0
2.0
Out
In x
1.0
0.0
0 0.5
1
Time [ns]
1.5
2

CMOS Logic
`
` NMOS Only Switch
• V
B does not pull up to 2.5V, but 2.5-V
TN
• Threshold voltage loss causes ( M
2 may be weakly conducting forming a path from Vdd to GND)
• NMOS has higher threshold than PMOS (body effect)

CMOS Logic
`
` NMOS Only Switch
• Pass transistor gates should never be cascaded as on the left
• Logic on the right suffers from static power dissipation and reduced noise margins

CMOS Logic
`
` NMOS Only Switch
• Solution1: Level Restoring Transistor
Level Restorer
M r
V dd
M n
V dd
M
2
M
1

CMOS Logic
`
` NMOS Only Switch
• Solution1: Level Restoring Transistor
`
Advantages
• Full swing on x (due to Level Restorer) so no static power consumption by inverter
• No static backward current path through Level Restorer and PT since Restorer is only active when A is high
• Restorer adds capacitance, takes away pull down current at X
` For correct operation Mr must be sized correctly (ratioed)

CMOS Logic
`
` NMOS Only Switch
• Solution2: Multiple V
T
Transistors
In
2
= 0V
In
1
= 2.5V
A = 2.5V
on
B = 0V off but leaking sneak path low V
T transistors
Out

CMOS Logic
`
` NMOS Only Switch
• Solution2: Multiple V
T
Transistors
`
Technology solution: Use (near) zero V
T devices for the
NMOS TGs to eliminate most of the threshold drop (body effect still in force preventing full swing to Vdd)
`
Impacts static power consumption due to subthreshold currents flowing through the TGs (even if VGS is below V
T
)
In
2
= 0V
In
1
= 2.5V
A = 2.5V
on off but
B = 0V leaking sneak path low V
T transistors
Out

CMOS Logic
`
` NMOS Only Switch
• Disadvantage:
– It can be bad because the signal can be degraded
– We do not allow a few gates in series for one signal (Pure TG logic is not regenerative, the signal gradually degrades after passing through a number of TGs)
• Advantage:
– Allow us to save transistor or less stage of logic
A Z
B

CMOS Logic
`
` PMOS
A Y
C
`
CMOS
C
Y A
C
A
C
C
Y

CMOS Logic
` CMOS Transmission Gates Family
`
There are many symbols for transmission gate
B B
B
A Z A Z
A
OR
B'
B'
BOOK
B'
ME
`
Be careful, because it is bi-directional
A
Z
Z

CMOS Logic
`
CMOS Transmission Gates Family
` This circuit performs a function similar to that of the well known diode bridge
C
=
Vss, C
= ⇒
Both transistor are on
⇒
A
=
Y
` The input voltage VA (which must be between Vss and Vdd) is then connected to the output through the parallel on resistance of the channels of the two transistors. As VA approaches Vdd, the N-channel device cuts off but the P-channel device remains non saturated, as VA approaches Vss, the Pchannel device cuts off but the N-channel device remains non saturated.
Therefore there is always a non saturated transistor between input and output
C
C
A Y
A Y
C
C

CMOS Logic
` CMOS Transmission Gates Family
`
For more understanding note to this circuit
`
We assume:
Vy(0 )
=
0, C
=
Vdd, C
=
0, V
TP
<
Vdd
−
V
TN
VA
Vdd
Vy t
A
C
S
I
P
D
I
N
C
Y
CL

CMOS Logic
` CMOS Transmission Gates Family t t
0 t
=
TP t
= −
TN
=
TP t t t
= −
TN
⇒
⎧
N
= sat
⇒
I
CL
=
I
N
+
I
P
⎩ P sat
⇒
⎧
N
= sat
⎩ P triode
⇒ τ ≈ r CL
P t
⇒
⎧
N
= off
⎩ P triode
⇒ τ ≈ r CL
P
A
C
I
P
I
N
C
Y
CL

CMOS Logic
` CMOS Transmission Gates Family
`
It is normally assumed as a resistor
V (t)
A
Vddu(t)
Vy(t)
TG
R
TG
CL
R
TG
r r
N P
t
TG
u(t)
A
C
I
P
I
N
C
Y
CL

CMOS Logic
` CMOS Transmission Gates Family
` r
N and r
P are approximately as follow (In saturation region)
R
N
N
AN
TN
2
P
P
AP
TP
2
A r
P r
N
V
TP
R
TG
= r
N r
P
Vdd
−
V
TN
Vdd Vy

CMOS Logic
` CMOS Transmission Gates Family
`
What to note about TG
• The inputs must be able to give high current because they are connected directly to Drain and Source of transistors
• Since each input is connected to an RC circuit, The delay can be considered directly
• Limited Fan-in
• Excessive Fan-out
• Noise vulnerability (not restoring)
• Supply voltage offset/bias vulnerability
• Poor high voltage levels if NMOS-only
• Body effect

CMOS Logic
` CMOS Transmission Gates Family
` Rules of Thumb
• Pass-Logic may consume half the power of static logic. But be careful of V
T drop resulting in static leakage
• Pass-Gate Logic is not appropriate when long interconnects separate logic stages or when circuits have high Fan-out load
(use buffering)

CMOS Logic
` CMOS Transmission Gates Family
` AND

CMOS Logic
` CMOS Transmission Gates Family
`
OR
Y A AB
=
(A
+
A)(A
+
B)
= +
B
A
A
A
B
A
AB
Y
Wired OR

CMOS Logic
` CMOS Transmission Gates Family
`
MUX
Y
⎩ B S
=
0
S
A
S
B
Y
S

CMOS Logic
` CMOS Transmission Gates Family
`
MUX
S
F
=
1
+
2
V dd
S F
GND
In
1
S S In
2

CMOS Logic
` CMOS Transmission Gates Family
`
XOR
A
B
B
Y A B
B

CMOS Logic
` CMOS Transmission Gates Family
`
XNOR
B
A
B
Y
=
AB AB
B

CMOS Logic
` CMOS Transmission Gates Family
`
D Latch
1) Load Q n
=
D n
2) Hold Q n
=
Q n -1
LD
D
LD
LD
LD
Q
D Q
LD Q

CMOS Logic
` CMOS Transmission Gates Family
`
D Latch
1) Load LD
1
=
D
Q
=
D
D
=
Q

CMOS Logic
` CMOS Transmission Gates Family
`
D Latch (Simpler Realization)
• If in Load Mode a level voltage opposite to the output of weak inverter is applied to the input by TG, Q = D and weak inverter is not damaged!
LD
Q
D
LD
Q
Weak Inverter

CMOS Logic
`
V
In
V
1
V
2
V i
C C C C C
V
C
V n
In
R e q
V
1
R e q V
2
C C
R e q V i
R e q V
R e q V
C C C
R e q V n
C
In
R e q
R e q
R e q
C C C
R e q
C
R e q
C
R e q
C

CMOS Logic
` Delay Optimization
`
Delay of RC chain t
P
=
0.69
n
C R e q k
=
0.69C R e q
2
`
Delay of Buffered chain t
P
=
0.69
⎡
⎣ n m
C R e q
=
⎡
0.69 C R e q
2
2
⎤ ⎛
⎜ n m
−
⎞
1 t buf
⎤ ⎛
⎜ n m
−
⎞
1 t buf m opt
=
1.7
t
Pbuf
C R e q

CMOS Logic
`
` Stored charge leaks away due to reverse-bias leakage current
` Stored value is good for about 1 ms
` Value must be rewritten to be valid
`
If not loaded every cycle, must ensure that latch is loaded often enough to keep data valid
`
Capacitance comes primarily from inverter’s gate logic

CMOS Logic
`

CMOS Logic
`
` Strong pull-up
` Strong pull-down
` May be difficult to design into a circuit (layout) because of close proximity of N and P devices (design rule separation)
`
Always requires 2N transisitors for any N x TG design
`
Many logic functions (multiplexers in particular) are easily implemented using TG based designs

CMOS Logic
` C
P
L
` Dual-rail form of pass transistor logic
` Avoids need for ratioed feedback
A
A
B
B
A
A
B
B
PT Network
F
Inverse PT
Network
F
F
F
A
S
B
S
S
A
S
B
L
L
Y
Y

CMOS Logic
`

CMOS Logic
`

CMOS Logic
`
` Differential so complementary data inputs and outputs are always available (so don’t need extra inverters)
` Still static, since the output defining nodes are always tied to Vdd or GND through a low resistance path
` Design is modular, all gates use the same topology, only the inputs are permuted
`
Simple XOR makes it attractive for structures like adders
`
Fast (assuming number of transistors in series is small)

CMOS Logic
`
` Additional routing overhead for complementary signals
` Still have static power dissipation problems
` V
OH is very weak! Then we need an inverter at the output

CMOS Logic
` Differential Cascode Voltage Switch Logic (DCVSL)
`
Compute both true and complementary outputs using a pair of complementary NMOS pull-down network
`
The PMOS transistors are driven by the output of the complementary network
`
No static power consumption
`
Fast response
Y
Inputs
Y f f

CMOS Logic
` Differential Cascode Voltage Switch Logic (DCVSL)
`
Example: NAND/AND
A
Y
=
AB
B
Y A B
A
B

CMOS Logic
` Differential Cascode Voltage Switch Logic (DCVSL)
`
General Design
A
0
0
0
0
1
1
1
1
B
0
0
1
1
0
0
1
1
C
0
1
0
1
0
1
0
1
0
0
1
0
1
1
1
F
1
C
_ + _ + _
0
+ _ +
1
B
A
_ +
_ +
_ +

CMOS Logic
` Differential Cascode Voltage Switch Logic (DCVSL)
`
General Design x a b
_ + ≡ x u u
= a x
+ bx x a u b x a b
_ + u
1 a b
_ + ≡ x u
2 a b
_ + u
1 u
2 x
_ + ≡ u u

CMOS Logic
` Differential Cascode Voltage Switch Logic (DCVSL)
`
General Design
C
_ + _ + _
0
+ _ +
1
B
_ + _ +
A
_ +
C
_
0
+ _ +
B
_ + _ +
1
A
_ +

CMOS Logic
` Differential Cascode Voltage Switch Logic (DCVSL)
`
Example: XOR/XNOR

CMOS Logic
`
`
Step-up (alpha) ratio of 2.7 (“e”) produces minimum powerdelay product
` P vs. N (beta) ratio of 2 balances pull-up and pull-down times and noise margins
`
Approximately 75% of static logic are NAND stacks (limit stack to 3-4, use ordering and tapering for speed)
`
Glitches consume approximately 15% of overall chip power
`
Crossover (short-circuit) current consumes ~ 10% of a static chip’s total power (but is a function of input/output slews, ie sizing)

Summary
`
`
Gate Level
`
Transistor level
` Layout Level

Contents
`
` Dynamic CMOS Logic
` CMOS Domino Logic
` CD Domino Logic
` Dynamic CVSL
` Sample-Set Differential Logic (SSDL)
` Summary

Introduction
` As mentioned before Digital MOS circuits can be classified into two categories:
` Static Circuits: require no clock or other periodic signal for operation (except sequential logic). In these circuits at every point in time (except when switching) the output is connected to either GND or Vdd via a low resistance path
` fan-in of N requires 2N devices ( n N-type + n P-type )
` Dynamic Circuits: require periodic clock signals, synchronized with data signals, for proper operation even in combinational logic. These circuits rely on the temporary storage of signal values on the (parasitic) capacitance of high impedance nodes
` requires only N + 2 transistors ( n +1 N-type + 1 P-type )
` takes a sequence of precharge and conditional evaluation phases to realize logic functions

Introduction
` Why Dynamic Logic?
` In the area of high speed, higher Fan-in, extremely low power dissipation, other digital logic circuit have been considered. In this lecture, two of these alternatives to
CMOS are described. The circuits are basically NMOS or
CMOS Gates with slight improvements. These are:
` Dynamic CMOS Logic
` CMOS Domino Logic
` Each of them have specific operating advantages over
NMOS or CMOS, but exhibit disadvantages in other areas

Dynamic CMOS Logic
` Dynamic Gates use a clocked PMOS pullup
` Two modes: precharge and evaluate
φ
Precharge
Y
Evaluate Precharge

Dynamic CMOS Logic
` The Foot
` What if pulldown network is ON during precharge?
` Use series evaluation transistor to prevent fight
φ
A
Y precharge transistor foot

Dynamic CMOS Logic
` Dynamic CMOS Logic
` To make the gate dynamic, a clock pulse is applied to the gate of complementary P and N channel devices. This gate consists of an NMOS Logic circuit whose output node is precharged to Vdd by the PMOS, when the clock is zero. The output node is discharged by the NMOS transistor connected to ground when the clock is high
CLK P
CLK
NMOS
Logic
Circuit
N
CLK

Dynamic CMOS Logic
` Dynamic CMOS Logic
M p
1
2
3
M e
(Clk = 0)
(Clk = 1)

Dynamic CMOS Logic
` Once the output of a dynamic gate is discharged, it cannot be charged again until the next precharge operation
` Inputs to the gate can make at most one transition during evaluation
` Output can be in the high impedance state during and after evaluation (PDN off), state is stored on C
L

Dynamic CMOS Logic
` Canonical Forms

Dynamic CMOS Logic
` Properties of Dynamic Gates
` Logic function is implemented by the PDN only
• should be smaller in area than static complementary CMOS
` Full swing outputs (V
OL
= GND and V
OH
= V
DD
)
` Nonratioed - sizing of the devices is not important for proper functioning (only for performance)
` Faster switching speeds
• reduced load capacitance due to lower number of transistors per gate (C int
) so a reduced logical effort
• reduced load capacitance due to smaller fan-out (C ext
)
• no I sc
C
L
, so all the current provided by PDN goes into discharging
• Ignoring the influence of precharge time on the switching speed of the gate, t pLH
= 0 but the presence of the evaluation transistor slows down the t pHL

Dynamic CMOS Logic
` Properties of Dynamic Gates
` Power dissipation should be better
• consumes only dynamic power – no short circuit power consumption since the pull-up path is not on when evaluating
• lower C
L
- both C int
(since there are fewer transistors connected to the drain output) and C ext per connected gate, not two)
(since there the output load is one
` But power dissipation can be significantly higher due to
• higher transition probabilities
• extra load on CLK
` PDN starts to work as soon as the input signals exceed V
Tn so set V
M
, V
IH and V
IL all equal to V
Tn
,
• low noise margin (NM
L
)
` Needs a precharge/evaluate clock

Dynamic CMOS Logic
` Leakage Sources
` Subthreshold conduction
` Transistors can’t abruptly turn
ON or OFF
` Reverse-biased PN junction diode current
• I s depends on doping levels And area and perimeter of diffusion regions, typically < 1 fA/ µ m 2
` Gate Leakage
• Carriers may tunnel thorough very thin gate oxides
• Negligible for older processes
10
9
10
6
10
3
10 0
10
-3
10
-6
10
-9
0
V
DD trend
0.3
0.6
0.9
1.2
1.5
1.8
V
DD t ox
0. 6 nm
0. 8 nm
1. 0 nm
1. 2 nm
1. 5 nm
1. 9 nm

Dynamic CMOS Logic
` Leakage Sources
` Output settles to an intermediate voltage determined by a resistive divider of the pull-up and pull-down networks
` Once the output drops below the switching threshold of the fan-out logic gate, the output is interpreted as a low voltage
CLK
2.5
1.5
0.5
-0.5
0
Out
20
Time (ms)
40

Dynamic CMOS Logic
` Leakage Sources
` Subthreshold leakage is dominant in modern transistors
CLK p
L
V
Out
Evaluate e
Precharge
Leakage sources

Dynamic CMOS Logic
` Solution to Charge Leakage
M p
M kp
M e

Dynamic CMOS Logic
` Charge Sharing
` Charge stored originally on CY is redistributed (shared) over CX leading to static power consumption by downstream gates and possible circuit malfunction
` When ∆ Vout = - Vdd (CX / (CX + CY )) the drop in Vout is large enough to be below the switching threshold of the gate it drives causing a malfunction
φ
φ
A
B = 0 x
C x
Y
C
Y
A
Y
Charge sharing noise x
V x
=
V
Y
=
C
Y
C x
+
C
Y
V dd

Dynamic CMOS Logic
` Solution to Charge Redistribution
` Add secondary precharge transistors (at the cost of increased area and power)
•
Typically need to precharge every other node
• Secondary precharge transistors should be small because their diffusion capacitance slows the evaluation (increase delay)
•
Big load capacitance C
Y helps as well
Y secondary precharge transistor
A
B x

Dynamic CMOS Logic
` Charge Sharing Example
` What is the worst case voltage drop on y? (Assume all inputs are low during precharge and that all internal nodes are initially at 0V)

Dynamic CMOS Logic
` Charge Sharing Example
∆
Vout
= −
Vdd
(
C a
+
C c
) (
C a
+
C c
+
C y
= −
( ( + ) )
= −
0.94V
)
CLK
C a
=15fF B a
A
B
C c
=15fF C
CLK
A
B
C b
B
C =50fF d
C b
=15fF

Dynamic CMOS Logic
` Backgate Coupling
` Susceptible to crosstalk due to
• High impedance of the output node
• Capacitive coupling
– Out2 capacitively couples with Out1 through the gate-source and gatedrain capacitances of M4
CLK M p
A=0
B=0
CLK
M
1
M
2
M e
Out1 =1
M
6
M
5
M
4
M
3
Out2 =0
In
Dynamic NAND Static NAND

Dynamic CMOS Logic
` Backgate Coupling
` Capacitive coupling means Out1 drops significantly so Out2 doesn’t go all the way to ground
3
Due to clk feedthrough
2
Out1
Due to backgate
1
Clk
0
In
Out2
-1
0 2
Time, ns
4 6

Dynamic CMOS Logic
` Clock Feedthrough
` A special case of capacitive coupling between the clock input of the precharge transistor and the dynamic output node due to the gate to drain capacitance
` So voltage of Out can rise above
Vdd. The fast rising (and falling edges) of the clock couple to
Out
M p
M e

Dynamic CMOS Logic
` Clock Feedthrough
2.5
1.5
0.5
In &
Clk
-0.5
0
Clock feedthrough
Out
0.5
Time, ns
1
Clock feedthrough

Dynamic CMOS Logic
` Other Effects
` Capacitive coupling
` Substrate coupling
` Minority charge injection
` Supply noise (Ground bounce)
` Floating output nodes

Dynamic CMOS Logic
` Floating output nodes
` Solutions:
• Only connect to gates
• Add staticizer to refresh the charge s
0
0 s

Dynamic CMOS Logic
` Advantages:
` For n inputs, dynamic logic requires n+2 transistors
` have small area, high speed and compact layouts
` Disadvantages:
` Circuit operation is more complex due to the required clock
` The inputs can only change during the precharge phase and must be stable during the evaluate portion of the cycle
` Need Monotonicity
• can not be cascaded
CLK P
CLK
NMOS
Logic
Circuit
N
CLK

Dynamic CMOS Logic
` Monotonicity
` Dynamic gates require monotonically rising inputs during evaluation violates monotonicity
during evaluation
A
φ
Precharge
Y
Evaluate Precharge
Output should rise but does not
A

Dynamic CMOS Logic
` Monotonicity Woes
` Dynamic gates produce monotonically falling outputs during evaluation
` Illegal for one dynamic gate to drive another!
X
Y
A 1 =
Precharge Evaluate Precharge
X monotonically falls during evaluation
Y should rise but cannot

Dynamic CMOS Logic
` Cascading V
Clk
In
Out1
Out2
V
Tn
t
∆
V

Dynamic CMOS Logic
` Cascading
` Input going from high to low during evaluation
• a is 5V when precharge b = 5V, c = 5V
• During evaluation:
–
–
–
Wanted: b
Æ 0V, c
Æ 5V
But, b takes some time to drop to 0V
Consequently, c may fall to some unknown value
` Solution
` NP-CMOS
` NORA Logic
` Domino logic a b c

Dynamic CMOS Logic
` NP-CMOS
` Only 0 → 1 transitions allowed at inputs of PDN
` Only 1 → 0 transitions allowed at inputs of PUN
Clk
M p
In
1
In
2
In
3
Clk
PDN
M e
1 1
1 0
Out1
Clk
In
4
In
5
Clk
M e
PUN
M p
0 0
0 1
Out2
(to PDN)

Dynamic CMOS Logic
` NORA Logic
` WARNING: Very sensitive to noise!
Clk M p
1 1
1 0
In
1
In
2
In
3
Clk
PDN
M e
Out1
Clk
In
4
In
5 to other
PDN’s
Clk
M e
PUN
M p
0 0
0 1 to other
PUN’s
Out2
(to PDN)

Dynamic CMOS Logic
` An example

Dynamic CMOS Logic
` Dynamic 4 Input NAND Gate
V
DD
Out
In
1
In
2
In
3
In
4
φ
GND

Dynamic CMOS Logic
` Power Consumption
` Power only dissipated when previous Out = 0 p
1
2
3 e

Dynamic CMOS Logic
` Power Consumption
` Dynamic Power Consumption is Data Dependent
•
• Assume signal probabilities (Dynamic 2-input NOR Gate)
• P
A=1
•
P
B=1
= 1/2
= 1/2
• Then transition probability
P
1 → 0
= P out=0
= ¾
A
0
B
0
Out
1
0 1 0
1 0 0
1 1 0
` Switching activity can be higher in dynamic gates!

Dynamic CMOS Logic
` Rules of Thumb
` Dynamic logic is best for wide OR/NOR structure (e.g. bitlines), providing 50% delay improvement over static CMOS
` Dynamic logic consumes 2x power due to its phase activity
(unconditional pre-charging), not counting clock power

Dynamic CMOS Logic
` Notes
` No need to implement the complement of the function, leading to smaller area
` We can avoid the long PMOS chains
` Handle the charge sharing problem and floating output nodes
` Input transistors should not change from on to off during evaluation

CMOS Domino Logic
` It is an extension of dynamic CMOS gates that allow cascading of stages
` The simple modification entails incorporating a static
CMOS inverter at the output of each logic gate
Clk M p
1 1
1 0
In
1
In
2
In
3
Clk
PDN
M e
Out1
Clk M p
M kp
0 0
0 1
In
4
In
5
Clk
PDN
M e domino AND
Out2
W
A
B
φ dynamic
NAND static inverter
X
C
Y Z

CMOS Domino Logic
` Stage A should be precharged in Φ
1 and evaluate in Φ
2
` Stage B should be precharged in Φ
2 and evaluate in Φ
1

CMOS Domino Logic
` During precharge (clk=0), the output node of the dynamic gate is precharged high and the output node of the CMOS inverter is low. Then subsequent stages will be turned off during the precharge phase
` When the clk=1, the output of the driving gate will conditionally discharge, allowing the output of the inverter to conditionally go high. Each connected gate output can then make a transition from low-to-high, in sequence
` There is no restriction on the number of logic stages that can be cascaded provided that all stages can evaluate during one clock pulse

CMOS Domino Logic
` pc =
Φ
1 and ev =
Φ
2 pc
V
W n- network
1 ev
X Y
2
1
2 pc =
1 cycle ev =
2 precharge input latched here evaluate output latched here

CMOS Domino Logic
` Won’t work! If pc = Φ
2 and ev = Φ
1 pc =
2 ev =
1 cycle
1
2 precharge evaluate precharge input latched here evaluate output latched here

CMOS Domino Logic
` Why Domino?
` Like falling dominos!

CMOS Domino Logic
` Produces monotonic outputs domino AND
W
A
B
φ dynamic
NAND static inverter
X
C
Y Z
φ
Precharge
W
Evaluate Precharge
X
Y
Z
A
B
φ
W
H
C
X
φ
Y
H Z
=
A
B
φ
C
X
φ
Z

CMOS Domino Logic
` Domino Optimizations
` Each domino gate triggers next one, like a string of dominos toppling over
` Gates evaluate sequentially but precharge in parallel Thus evaluation is more critical than precharge
` HI-skewed static stages can perform logic
` Static inverter can be optimized to match fan-out
S0
D0
S1
D1
φ
S2
D2
S3
D3
H
Y
S4
D4
S5
D5
φ
S6
D6
S7
D7

CMOS Domino Logic
` Leakage
` Dynamic node floats high during evaluation
•
Transistors are leaky (I
OFF
≠ 0)
• Dynamic value will leak away over time
•
Formerly miliseconds, now nanoseconds!
` Use keeper to hold dynamic node
•
Must be weak enough not to fight evaluation
A
φ weak keeper
2
2
1 k
X
H Y

CMOS Domino Logic
` Noise Sensitivity
` Dynamic gates are very sensitive to noise
• Inputs: V
IH
≈ V tn
• Outputs: floating output susceptible noise
` Noise sources
• Capacitive crosstalk
• Charge sharing
• Power supply noise
• Feedthrough noise
• And … !

CMOS Domino Logic
` Designing with Domino Logic
` If all the inputs come from other domino gates, then all the inputs will be low during the precharge. You don’t need to explicit evaluate transistor
` Need to be a little careful. When precharge begins, the first gate’s output must precharge before the next gate can precharge. Both evaluate and precharge ripple in this scheme. But, if there is already a tall stack, transistor ratioing will let precharge win anyway. (but you waste power until the precharge ripples)

CMOS Domino Logic
` Example
` During precharge, x, y , z = 1, x , y = 0
` During evaluation, x = 0 when a = b = 1
` Therefore, z = a b c d a b x c x y d y z

CMOS Domino Logic
` Advantages:
` Large Fan-in, fewer transistors (n+4 transistors, whereas CMOS requires 2n)
` Single clock can be used to precharge and evaluate all stages at the same time
` It is attractive for high-speed circuits
` 1.5 – 2x faster than static CMOS
` Widely used in high-performance microprocessors
` Disadvantages:
` Each logic block must incorporate a separate inverter
` Each block performs only non-inverting logic
` Monotonicity
` Leakage
` Charge sharing
` Noise

CMOS Domino Logic
` Dual Rail Domino
` Domino only performs noninverting functions
• AND, OR but not NAND, NOR, or XOR
` Dual-rail domino solves this problem
• Takes true and complementary inputs
• Produces true and complementary outputs
Y_l inputs sig_h
0
0
1
1 sig_l
0
1
0
1
Meaning
Precharged
‘0’
‘1’ invalid f
φ
φ f
Y_h

CMOS Domino Logic
` Example AND/NAND
` Given A_h, A_l, B_h, B_l
` Compute Y_h = A * B, Y_l = ~(A * B)
` Pulldown networks are conduction complements
Y_l
= A*B
A_l B_l
φ
φ
A_h
B_h
Y_h
= A*B

CMOS Domino Logic
` Example XOR/XNOR
` Sometimes possible to share transistors
Y_l
= A xnor B
A_h A_l
B_l
φ
φ
A_l
B_h
A_h
Y_h
= A xor B

CMOS Domino Logic
` Rules of Thumb
` Typical domino keepers have W/L = 5-20% of effective width of evaluate tree
` Typical domino output buffers have a beta ratio of ~ 6:1 to push the switch point higher for fast rise-time

CD Domino Logic
` We noted that dynamic inputs never make 1 to 0 transitions while in evaluation
` Two solutions:
` Precharge outputs low using an inverting gate
(standard domino)
` Delay the evaluate clock until inputs settle (CD domino)

CD Domino Logic
` Self-timed dynamic logic family
` Consists of a dynamic gate, and an optional delay element for the clock signal

CD Domino Logic
` Advantages
` Uses single-rail circuits, rather than dual-rail for standard domino
` Provides both inverting and non-inverting functions
` High-speed, large fan-in NOR and OR circuits

CD Domino Logic
` Delay Matching
` CD domino requires delay matching between the slowest dynamic gate at a level and a delay element
` A 20% margin is typically added to the delay of the fixed delay element to account for PVT variations
` Thus, 20% of the speed gain possible with CD domino is not realized
` Average speed gain of (60+20)% is theoretically possible
` Use digitally programmable delay elements
(PDEs) to reduce the margin and attain a speed improvement without affecting the reliability in the presence of variations

CD Domino Logic
` Clocking Scheme
` The circuits are fully levelized
` The delay element on each level is tuned to the slowest gate at its level, plus a 20% margin primary inputs dynamic gate dynamic gate fixed delay
1 dynamic gate dynamic gate fixed delay
2 dynamic gate dynamic gate fixed delay
3

Dynamic CVSL
` Positive feedback does not exist
F
C
In
{ NMOS
Logic Array
}
In
C
F

Sample-Set Differential Logic (SSDL)
` It is one type of Dynamic CVSL with positive feedback
` By this logic the low level output is guaranteed to zero in evaluation phase
F
C C
F
In
{ NMOS
Logic Array
}
In

Summary
` This lecture describes many basics CMOS Logic
Gates which require clock or other periodic signal for operation
` These circuits rely on the temporary storage of signal values on the (parasitic) capacitance of high impedance nodes