APT40SM120B_S
APT40SM120B
APT40SM120S
1200V, 40A, 80mΩ
Silicon Carbide Power MOSFET
TO
-24
FEATURES
TYPICAL APPLICATIONS
• Fast switching with low EMI/RFI
• PFC and other boost converter
• Low Switching Energy
• Buck converter
• Low RDS(on) Temperature Coefficient For
• Two switch forward (asymmetrical bridge)
Improved Efficiency
• Single switch forward
• Low gate charge
• Flyback
• Short Circuit Withstand Rated
• Inverters
7
D 3 PAK
APT40SM120B
APT40SM120S
D
G
• RoHS compliant
S
Maximum Ratings
Symbol
VDSS
Parameter
Ratings
Unit
1200
V
Drain Source Voltage
Continuous Drain Current @ TC = 25°C
41
Continuous Drain Current @ TC = 100°C
29
IDM
Pulsed Drain Current
100
VGS
Gate-Source Voltage
ID
SCWT
PD
1
A
-10 to +25
V
8
µs
Total Power Dissipation @ TC = 25°C
273
W
Linear Derating Factor
1.82
W/°C
Short Circuit Withstand Time: VDD = 960V, VGS = 20V, TC=25°C
Thermal and Mechanical Characteristics
RθJC
TJ,TSTG
TL
Torque
Characteristic
Min
Typ
Junction to Case Thermal Resistance
Operating and Storage Junction Temperature Range
-55
Mounting Torque (TO-247 Package), 6-32 or M3 screw
Test Conditions
Min
VBR(DSS)
Drain-Source Breakdown Voltage
VGS = 0V, ID = 1mA
1200
Breakdown Voltage Temperature Coefficient
Drain-Source On Resistance 2
VGS(th)
Gate-Source Threshold Voltage
∆VGS(th)/∆TJ
°C/W
°C
10
in·lbf
1.1
N·m
TJ = 25°C unless otherwise specified
Parameter
RDS(on)
0.55
260
Symbol
∆VBR(DSS)/∆TJ
Unit
175
Soldering Temperature for 10 Seconds (1.6mm from case)
Static Characteristics
Max
Threshold Voltage Temperature Coefficient
Typ
0.250
VGS = 20V, ID = 20A
80
VDS = 1200V
TJ = 25°C
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Source Leakage Current
VGS = +20V / -10V
ESR
Equivalent Series Resistance
f = 1MHz, 25mV, Drain Short
VGS = 0V
1.7
Unit
V
Reference to 25°C, ID = 1mA
VGS = VDS, ID = 1mA
Max
V/°C
100
mΩ
3.0
V
-6
mV/°C
1
100
500
TJ = 125°C
±100
1.3
µA
nA
Ω
050-7698 Rev B 7-2014
Symbol
Dynamic Characteristics
Symbol
Parameter
Test Conditions
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Coss
Output Capacitance
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
td(on)
Turn-On Delay Time
tr
td(off)
tf
Turn-Off Switching Energy
td(on)
Turn-On Delay Time
Current Rise Time
Turn-On Switching Energy
Eoff
Turn-Off Switching Energy
4
Source-Drain Diode Characteristics
Symbol
Parameter
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Irrm
Reverse Recovery Current
10
10
ns
40
25
RG = 0.7 Ω 3
L = 115 µH
435
Tc = 25°C
130
VDD = 800V
10
µJ
10
ns
45
30
RG = 0.7 Ω 3
L = 115 µH
405
Tc = 150°C
140
µJ
TJ = 25°C unless otherwise specified
Test Conditions
ISD = 20A, TJ = 25°C, VGS = 0V
ISD = 20A, VDD = 800V
dI/dt = 100A/µs, TJ = 25°C
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature.
2 Pulse test: Pulse Width < 380µs, duty cycle < 2%.
3 RG is total gate resistance including internal gate driver impedance (MIC4452).
4 Free wheeling diode APT10SCD120B.
050-7698 Rev B 7-2014
nC
60
ID = 20A
Current Fall Time
Eon2
30
VGS = 20V
Turn-Off Delay Time
pF
130
ID = 20A
Current Fall Time
Unit
120
VGS = 20V
Turn-Off Delay Time
Max
20
f = 1MHz
VDD = 800V
Eoff
tf
VGS = 0V, VDD = 1000V
ID = 20A
Current Rise Time
Typ
2560
VDD= 800V
Turn-On Switching Energy 4
tr
Min
VGS = 0/20V
Eon2
td(off)
APT40SM120B_S
TJ = 25°C unless otherwise specified
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
Min
Typ
Max
Unit
3.9
V
140
ns
115
nC
2.0
A
TYPICAL PERFORMANCE CURVES
APT40SM120B_S
60
60
V
= 20V
T = 25°C
GS
J
50
TJ= 25°C
ID, DRAIN CURRENT (A)
40
TJ= 150°C
30
TJ= 175°C
20
10
0
40
60
14V
12V
20
10V
10
0
0
2
4
6
8
10
12
14
VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V)
Figure 1, Output Characteristics
0
T = 175°C
J
J
ID, DRAIN CURRENT (A)
40
50
18V
20V
16V
14V
30
12V
20
10V
10
0
0
VGS = 20V @ 20A
12V
10V
10
ID, DRAIN CURRENT (A)
1.3
1.2
1.1
0
5
10
15
20
25
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 4, Output Characteristics
VDS> ID(ON) x RDS(ON) MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
40
1.4
14V
20
45
1.5
16V
30
50
1.6
20V
18V
40
0
5
10
15
20
25
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 3, Output Characteristics
TJ= 175°C
35
TJ= 150°C
30
TJ= 125°C
25
TJ= 100°C
20
15
TJ= 75°C
10
TJ= 50°C
TJ= 25°C
5
1.0
25
1.0E−8
50
75
100
125
150
0
TJ, JUNCTION TEMPERATURE (°C)
Figure 5, RDS(ON) vs Junction Temperature
Ciss
1.0E−9
1.0E−10
0
175
Coss
Crss
1.0E−11
1
10
100
1000
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 7, Capacitance vs Drain-to-Source Voltage
0
2
4
J
−5
−10
6
8
10
12
14
VGS, GATE-TO-SOURCE VOLTAGE (V)
Figure 6, Transfer Characteristics
T = 25°C
IDS, REVERSE DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
50
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
1
2
3
4
5
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 2, Output Characteristics
60
T = 150°C
C, CAPACITANCE (F)
18V
16V
20V
30
-5 VGS
16
-4 VGS
-3 VGS
-2 VGS
-1 VGS
0 VGS
−15
−20
−4.5 -4 -3.5 -3 -2.5 -2 -1.5 -1 -0.5 0
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 8, Reverse Drain Current vs Drain-to-Source Voltage
050-7698 Rev B 7-2014
ID, DRAIN CURRENT (A)
50
APT40SM120B_S
TYPICAL PERFORMANCE CURVES
0
-3 VGS
-5 VGS
-2 VGS
-1 VGS
−10
0 VGS
−15
−20
−4.5 -4 -3.5 -3 -2.5 -2 -1.5 -1 -0.5 0
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 9, Reverse Drain Current vs Drain-to-Source Voltage
T = 150°C
-1 VGS
−10
0 VGS
−15
1.0
I = 1mA
d
VGS(th), THRESHOLD VOLTAGE (V)
(NORMALIZED)
d
1.03
1.02
1.01
1
25
50
75
100
125
150
175
TJ, JUNCTION TEMPERATURE (°C)
Figure 11, Breakdown Voltage vs Temperature
100
ID, DRAIN CURRENT (A)
-3 VGS
-2 VGS
I = 1mA
(NORMALIZED)
VBR(DSS), BREAKDOWN VOLTAGE (V)
-5 VGS
−5
−20
−4.5 -4 -3.5 -3 -2.5 -2 -1.5 -1 -0.5 0
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 10, Reverse Drain Current vs Drain-to-Source Voltage
1.04
10
RDS(on)
.01ms
.1ms
1
1ms
T = 175°C
J
T = 100°C
C
0.1
050-7698 Rev B 7-2014
-4 VGS
J
IDS, REVERSE DRAIN CURRENT (A)
IDS, REVERSE DRAIN CURRENT (A)
J
−5
0
-4 VGS
T = 125°C
1
10ms
100ms/DC
10
100
1200
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 13, Forward Safe Operating Area
0.9
0.8
0.7
0.6
25
50
75
100
125
150
175
TJ, JUNCTION TEMPERATURE (°C)
Figure 12, Threshold Voltage vs Temperature
APT40SM120B_S
D = 0.9
0.5
0.7
0.4
0.5
0.3
Note:
0.2
0.3
0.1
0.1
P DM
ZθJC, THERMAL IMPEDANCE (°C/W)
0.6
t2
0
10-5
t
0.05
Duty Factor D = 1 /t2
Peak T J = P DM x Z θJC + T C
SINGLE PULSE
10-4
10-2
10-3
0.1
RECTANGULAR PULSE DURATION (SECONDS)
Figure 14, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
TO-247 (B) Package Outline
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
5.38 (.212)
6.20 (.244)
Drai n
(Heat Sink)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
1
D3PAK (S) Package Outline
e1 SAC: Tin, Silver, Copper
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05(.632)
Revised
4/18/95
20.80 (.819)
21.46 (.845)
Drai n
t1
1.04 (.041)
1.15(.045)
13.79 (.543)
13.99(.551)
13.41 (.528)
13.51(.532)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
3.50 (.138)
3.81 (.150)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
2.21 (.087)
2.59 (.102)
19.81 (.780)
20.32 (.800)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
1.22 (.048)
1.32 (.052)
1.27 (.050)
1.40 (.055)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs. }
Gate
Drai n
Source
Source
Drai n
Gate
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters (Inches)
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Drain)
and Leads
are Plated
050-7698 Rev B 7-2014
0.46 (.018)
0.56 (.022) {3 Plcs}
APT40SM120B_S
Disclaimer:
050-7698 Rev B 7-2014
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CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used
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Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any notice. This
product has been subject to limited testing and should not be used in conjunction with life-support or other mission-critical equipment or
applications. Microsemi assumes no liability whatsoever, and Microsemi disclaims any express or implied warranty, relating to sale and/or
use of Microsemi products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any
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