Zero-current switching

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19.3 Soft switching in resonant converters
Soft switching can mitigate some of the mechanisms of switching loss and possibly
reduce the generation of EMI
Losses due to high voltage and high current present in switch during transitions,
e.g. due to diode reverse recovery
Losses due to shorting device capacitances
Semiconductor devices are switched on or off at the zero crossing of their voltage or
current waveforms:
Zero-current switching: transistor turn-off transition occurs at zero current. Zerocurrent switching eliminates the switching loss caused by IGBT current tailing and
by stray inductances. It can also be used to commutate SCR’s.
Zero-voltage switching: transistor turn-on transition occurs at zero voltage. Diodes
may also operate with zero-voltage switching. Zero-voltage switching eliminates
the switching loss induced by diode stored charge and device output capacitances.
Zero-voltage switching is usually preferred in converters based on MOSFETs
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19.3.1 Operation of the full bridge below resonance:
Zero-current switching
Series resonant converter example
+
Q1
vds1(t)
D1
Q3
L
+
iQ1(t) –
Vg
C
D3
+
–
vs(t)
Q2
D2
Q4
–
is(t)
D4
Current bi-directional switches
ZCS vs. ZVS depends on tank current zero crossings with respect to
transistor switching times = tank voltage zero crossings
Operation below resonance: input tank current leads voltage
Zero-current switching (ZCS) occurs
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Tank input impedance
Operation below
resonance: tank input
impedance Zi is
dominated by tank
capacitor.
∠Zi is negative, and
tank input current
leads tank input
voltage.
|| Zi ||
1
ωC
ωL
f0
R0
Qe = R0 /Re
Re
Zero crossing of the
tank input current
waveform is(t) occurs
before the zero
crossing of the voltage
vs(t) – before switch
transitions
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Switch network waveforms, below resonance
Zero-current switching
+
Q1
vds1(t)
D1
Q3
L
C
D3
+
iQ1(t) –
vs(t)
Q2
D2
Q4
–
is(t)
D4
Conduction sequence: Q1–D1–Q2–D2
Q1 is turned off during D1 conduction
interval, without loss (same for Q4/D4)
Q2 is turned off during D2 conduction
interval, without loss (same for Q3/D3)
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Turn-on transitions: significant switching losses
+
Q1
vds1(t)
D1
Q3
L
C
D3
+
iQ1(t) –
vs(t)
Q2
D2
Q4
–
is(t)
D4
Q1 turns on while D2 is conducting. Stored
charge of D2 and of semiconductor output
capacitances must be removed. Transistor
turn-on transition is identical to hardswitched PWM, and switching loss occurs.
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More on Diode Stored Charge and Reverse Recovery
Typical test circuit
and parameter
definitions in diode
data sheets
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Diode stored charge during recovery
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“Snappy” and “soft-recovery” diodes
Also see textbook Section 4.3.2 and HW 1 problem 3 solution
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Example
Diode in IRGP50B60 (IGBT+diode): ultra-fast, “soft recovery”
Reverse recovery time trr, maximum reverse recovery current IRRM, and
reverse recovery charge Qrr depend on diode forward current IF prior to
turn off, rate of current decay dif/dt, and junction temperature TJ
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Review of HW1 problem 3 example
iL = I
D
iLs
L
it
+
–
M
+
_
+
its
vds
g
id
Ls
Ms
gs
Ds
V
ids
C
_
g
t
gs
t
Ts
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19.3.2 Operation of the full bridge above resonance:
zero-voltage switching
Series resonant converter example
+
Q1
vds1(t)
D1
Q3
L
+
iQ1(t) –
Vg
C
D3
+
–
vs(t)
Q2
D2
Q4
–
is(t)
D4
Operation above resonance: input tank current lags voltage
Zero-voltage switching (ZVS) occurs
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Tank input impedance
Operation above
resonance: tank input
impedance Zi is
dominated by tank
inductor.
∠Zi is positive, and
tank input current lags
tank input voltage.
|| Zi ||
1
ωC
ωL
R0
Re
f0
Qe = R0 /Re
Zero crossing of the
tank input current
waveform is(t) occurs
after the zero crossing
of the voltage vs(t) –
after switch transitions
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Switch network waveforms, above resonance
Zero-voltage switching
+
Q1
D1
vds1(t)
Q3
L
C
D3
+
iQ1(t) –
vs(t)
Q2
Q4
D2
is(t)
–
D4
Conduction sequence: D1–Q1–D2–Q2
Q1 is turned on during D1 conduction
interval, without loss
ZVS turn-on transitions for all transistors
Turn-off transitions are at non-zero
current
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Turn-off transition at non-zero current: hard switching?
+
Q1
vds1(t)
D1
Q3
L
C
D3
+
iQ1(t) –
vs(t)
Q2
D2
Q4
–
is(t)
D4
When Q1 turns off, D2 must begin
conducting. Voltage across Q1 must
increase to Vg. Transistor turn-off transition
is identical to hard-switched PWM.
Switching loss may occur, but …
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Soft switching at the turn-off transition
+
Q1
D1 C
leg
Vg
vds1(t)
–
Q3
Cleg
D3
is(t)
+
–
vs(t)
Q2
D2
Cleg
L
+
to remainder
of converter
Cleg
D4
–
Q4
vds1(t)
Conducting
devices:
Turn off
Q1, Q4
X D2
D3
• Introduce delay
between turn-off of Q1
and turn-on of Q2.
Tank current is(t) charges and
discharges Cleg. Turn-off transition
becomes lossless. During commutation
interval, no devices conduct.
Vg
Q1
Q4
• Introduce small
capacitors Cleg across
each device (or use
device output
capacitances).
So zero-voltage switching exhibits low
switching loss: losses due to diode
stored charge and device output
capacitances are eliminated.
t
Commutation
interval
Note: with IGBTs, substantial Cleg may be
required
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Resonant Inverter Design
Applications:
Resonant inverters for lamp ballasts
DC-AC side of resonant DC-DC converters
Resonant inverter design objectives:
1. Operate with a specified load characteristic and range of operating points
• With a nonlinear load, must properly match inverter output characteristic to
load characteristic
2. Obtain zero-voltage switching or zero-current switching
• Preferably, obtain these properties at all loads
• Could allow ZVS property to be lost at light load, if necessary
3. Minimize transistor currents and conduction losses
• To obtain good efficiency at light load, the transistor current should scale
proportionally to load current (in resonant converters, it often doesn’t!)
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19.4 Load-dependent properties of resonant converters
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Inverter output characteristics
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Inverter output characteristics
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Inverter output characteristics
This result is valid provided that (i) the resonant network is purely reactive,
and (ii) the load is purely resistive.
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Matching output characteristic
to application requirements
Electronic ballast
Electrosurgical generator
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Input impedance of the resonant tank network
Appendix C: Section C.4.4
Expressing the tank input impedance as a function of the load resistance R:
where
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ZN and ZD
ZD is equal to the tank output
impedance under the
condition that the tank input
source vs1 is open-circuited.
ZD = Zo∞
ZN is equal to the tank
output impedance under
the condition that the
tank input source vs1 is
short-circuited. ZN = Zo0
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Reciprocity
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Relations
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Relating transistor current variations
to load resistance R
Theorem 1: If the tank network is purely reactive, then its input impedance || Zi ||
is a monotonic function of the load resistance R.
So as the load resistance R varies from 0 to ∞, the resonant network input
impedance || Zi || varies monotonically from the short-circuit value
|| Zi0 || to the open-circuit value || Zi∞ ||.
The impedances || Zi∞ || and || Zi0 || are easy to construct.
If you want to minimize the circulating tank currents at light load, maximize ||
Zi∞ ||.
Note: for many inverters, || Zi∞ || < || Zi0 || ! The no-load transistor current is
therefore greater than the short-circuit transistor current.
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Derivation
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Example: || Zi || of LCC
• for f < f m, || Zi || increases
with increasing R .
• for f > f m, || Zi || decreases
with increasing R .
• at a given frequency f, || Zi ||
is a monotonic function of
R.
• It’s not necessary to draw
the entire plot: just construct
|| Zi0 || and || Zi∞ ||.
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Discussion: LCC
LCC example
|| Zi0 || and || Zi∞ || both represent series
resonant impedances, whose Bode
diagrams are easily constructed.
|| Zi0 || and || Zi∞ || intersect at frequency
fm.
For f < fm
then || Zi0 || < || Zi∞ || ; hence
transistor current decreases as
load current decreases
For f > fm
then || Zi0 || > || Zi∞ || ; hence
transistor current increases as load
current decreases, and transistor
current is greater than or equal to
short-circuit current for all R
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Discussion —series and parallel
• No-load transistor current = 0, both above
and below resonance.
• ZCS below resonance, ZVS above
resonance
• Above resonance: no-load transistor current
is greater than short-circuit transistor
current. ZVS.
• Below resonance: no-load transistor current
is less than short-circuit current (for f <fm),
but determined by || Zi∞ ||. ZCS.
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19.4
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Load-dependent properties
of resonant converters
Resonant inverter design objectives:
1. Operate with a specified load characteristic and range of operating points
• With a nonlinear load, must properly match inverter output characteristic to
load characteristic
2. Obtain zero-voltage switching or zero-current switching
• Preferably, obtain these properties at all loads
• Could allow ZVS property to be lost at light load, if necessary
3. Minimize transistor currents and conduction losses
• To obtain good efficiency at light load, the transistor current should scale
proportionally to load current (in resonant converters, it often doesn’t!)
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Relation between ZVS/ZCS boundary and load R
Theorem 2: If the tank network is purely reactive, then the boundary between zerocurrent switching and zero-voltage switching occurs when the load resistance R is
equal to the critical value Rcrit, given by
It is assumed that zero-current switching (ZCS) occurs when the tank input
impedance is capacitive in nature, while zero-voltage switching (ZVS) occurs when
the tank is inductive in nature. This assumption gives a necessary but not sufficient
condition for ZVS when significant semiconductor output capacitance is present.
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Derivation
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Discussion —Theorem 2
Again, Zi∞, Zi0, and Zo0 are pure imaginary quantities.
If Zi∞ and Zi0 have the same phase (both inductive or both capacitive), then
there is no real solution for Rcrit.
Hence, if at a given frequency Zi∞ and Zi0 are both capacitive, then ZCS occurs
for all loads. If Zi∞ and Zi0 are both inductive, then ZVS occurs for all loads.
If Zi∞ and Zi0 have opposite phase (one is capacitive and the other is inductive),
then there is a real solution for Rcrit. The boundary between ZVS and ZCS
operation is then given by R = Rcrit.
Note that R = || Zo0 || corresponds to operation at matched load with maximum
output power. The boundary is expressed in terms of this matched load
impedance, and the ratio Zi∞ / Zi0.
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LCC example
f > f∞: ZVS occurs for all R
f < f0: ZCS occurs for all R
f0 < f < f∞, ZVS occurs for
R< Rcrit, and ZCS occurs for
R> Rcrit.
Note that R = || Zo0 ||
corresponds to operation at
matched load with maximum
output power. The boundary is
expressed in terms of this
matched load impedance, and
the ratio Zi∞ / Zi0.
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LCC example, continued
Typical dependence of Rcrit and matched-load
impedance || Zo0 || on frequency f, LCC example.
Typical dependence of tank input impedance phase
vs. load R and frequency, LCC example.
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19.4.4 Design Example
Select resonant tank elements to design a resonant inverter that meets the following
requirements:
•
•
•
•
Switching frequency fs = 100 kHz
Input voltage Vg = 160 V
Inverter is capable of producing a peak open circuit output voltage of 400 V
Inverter can produce a nominal output of 150 Vrms at 25 W
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Solve for the output characteristic (ellipse)
that meets requirements
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Numerical values
The required short-circuit current can be found by solving the elliptical
output characteristic for Isc:
hence
Use the requirements to evaluate the above:
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Open circuit magnitude response
The requirements imply that the inverter tank circuit have an open-circuit
magnitude response:
Note that Voc need not have been given as a requirement, we can solve the
elliptical relationship, and therefore find Voc given any two required operating
points of ellipse. E.g. Isc could have been a requirement instead of Voc
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Solve for matched load
(output impedance magnitude)
Matched load therefore occurs at the operating point
Hence the tank should be designed such that its output impedance is
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Solving for the tank elements
to give required ||Zo0|| and ||Hinf||
Design an LCC tank network for this example
The impedances of the series and shunt branches can be represented by
the reactances
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Analysis in terms of Xs and Xp
The transfer function is given by the voltage divider equation:
The output impedance is given by the parallel combination:
Solve for Xs and Xp:
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Discussion
Choice of series branch elements
The series branch is comprised of two elements L and Cs, but there is only one
design parameter: Xs = 733 Ω. Hence, there is an additional degree of
freedom, and one of the elements can be arbitrarily chosen.
This occurs because the requirements are specified at only one operating
frequency. Any choice of L and Cs, that satisfies Xs = 733 Ω will meet the
requirements, but the behavior at switching frequencies other than 100 kHz
will differ.
Given a choice for Cs, L must be chosen according to:
For example, Cs = 3Cp = 3.2 nF leads to L = 1.96 mH
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Rcrit
For the LCC tank network chosen, Rcrit is determined by the parameters of the
output ellipse, i.e., by the specification of Vg, Voc, and Isc. Note that Zo∞ is
equal to jXp. One can find the following expression for Rcrit:
Since Zo0 and H ∞ are determined uniquely by the operating point
requirements, then Rcrit is also. Other, more complex tank circuits may have
more degrees of freedom that allow Rcrit to be independently chosen.
Evaluation of the above equation leads to Rcrit = 1466 Ω. Hence ZVS for R <
1466 Ω, and the nominal operating point with R = 900 Ω has ZVS.
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Ellipse again with Rcrit, Rmatched, and Rnom
showing ZVS and ZCS
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Converter performance
For this design, the salient tank frequencies are
(note that fs is nearly equal to fm, so the transistor
current should be nearly independent of load)
The open-circuit tank input impedance is
So when the load is open-circuited, the transistor current is
Similar calculations for a short-circuited load lead to
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Extending ZVS range
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