EECS 105 Spring 20025 Lecture 1
R. T. Howe
EECS 105 Spring 20025 Lecture 1
EECS 105: Course Overview
Course Overview
• EE 105 – content shuffled (delay phasors)
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– Prerequisite: EECS 40
– analog integrated circuits + basic IC device models
needed to design them
– course incorporates a laboratory
• Related courses:
– EE 130, 140, 141, 142
• http://inst.eecs.berkeley.edu/~ee105/spring05/
University of California, Berkeley
Dept. of EECS
R. T. Howe
EECS 105 Spring 20025 Lecture 1
R. T. Howe
Semiconductor physics and passives (2.5 weeks)
MOSFET physics/model; sample & hold (2 weeks)
Common-source small-signal amplifier (0.5 week)
MOS current sources (1 week)
Single-stage MOS amplifiers (2 weeks)
Phasors and frequency domain analysis (2.5 weeks)
Multistage amplifier: the cascode (1.5 weeks)
pn junction diode and bipolar transistor (2 weeks)
Bipolar transistor amplifiers (0.5 week)
University of California, Berkeley
Dept. of EECS
EECS 105 Spring 20025 Lecture 1
Transistors are Bricks
R. T. Howe
EE 105 in the Grand Scheme
• Transistors are the essential building blocks
EECS 150, 152
MOS Cap
Analog
“Amp”
Digital
Gate
Variable
Capacitor
• Focus of course:
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CMOS wireless
sensor node
PN Junction
Dust Networks, Inc.
UC Berkeley,
(K. S. J. Pister, et
al, IEEE ISSCC, 2004)
Understand basic device physics
Build analog circuits
Learn basic electronic prototyping and measurement
Learn the circuit simulator SPICE
Dept. of EECS
A. M. Niknejad, Fall 2003
University of California, Berkeley
Dept. of EECS
A. M. Niknejad, Fall 2003
University of California, Berkeley
1
EECS 105 Spring 20025 Lecture 1
R. T. Howe
EECS 105 Spring 20025 Lecture 1
Micro/Nanoelectronics Progress
R. T. Howe
SPICE
Performance
Bandwidth x Resolution [Hz-LSB]
1.0E+15
1.0E+14
1.0E+13
Lea
1.0E+12
lope
PS
dµ
/1 .5
(2 x
r
yea
s)
* Example netlist
Q1 1 2 0 npnmod
R1 1 3 1k
Vdd 3 0 3v
.tran 1u 100u
≅300x
μP = microprocessor
1.0E+11
ADC = analogto-digital converter
1.0E+10
Lead ADC: 2x/4.7 years
All ADCs: 2x/6.1 years
1.0E+09
1.0E+08
1985
1990
1995
2000
2005
• Moore’s law (IEEE Intl Solid-State Circuits Conf., Feb. 2003)
• Why are converters progressing relatively slowly? (stay tuned …)
B. E. Boser, Fall 2004
Dept. of EECS
University of California, Berkeley
EECS 105 Spring 20025 Lecture 1
R. T. Howe
Periodic Table of Elements
stimulus
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Dept. of EECS
netlist
SPICE
response
SPICE = Simulation Program with IC Emphasis
Developed at Berkeley (released in 1972 by late Prof. D. O. Pederson)
.DC: Find the DC operating point of a circuit
.TRAN: Solve the transient response of a circuit (solve a system of
generally non-linear ordinary differential equations via adaptive timestep solver)
.AC: Find steady-state response of circuit to a sinusoidal excitation
A. M. Niknejad, Fall 2003
University of California, Berkeley
EECS 105 Spring 20025 Lecture 1
R. T. Howe
Electronic Properties of Silicon
• Silicon is in Group IV
– Electronic structure: 1s22s22p63(sp)4
– Diamond lattice, with 0.235 nm bond length
• Very poor conductor at room temperature:
why?
A. M. Niknejad,
Fall 2003
Dept. of EECS
University of California, Berkeley
Dept. of EECS
University of California, Berkeley
2
EECS 105 Spring 20025 Lecture 1
R. T. Howe
Bond Model for Silicon
EECS 105 Spring 20025 Lecture 1
R. T. Howe
Thermal Equilibrium (Pure Si)
• Balance between generation and
recombination determines no = po
• Strong function of temperature: T = 300 K
Dept. of EECS
University of California, Berkeley
EECS 105 Spring 20025 Lecture 1
R. T. Howe
Doping with Group V Elements
• P, As: extra bonding electron … lost to
crystal at room temperature
Dept. of EECS
University of California, Berkeley
Dept. of EECS
EECS 105 Spring 20025 Lecture 1
University of California, Berkeley
R. T. Howe
Doping with Group III Elements
• Boron: 3 bonding electrons Æ one bond is
unsaturated
Dept. of EECS
University of California, Berkeley
3
EECS 105 Spring 20025 Lecture 1
R. T. Howe
EECS 105 Spring 20025 Lecture 1
Mass Action Law
R. T. Howe
Compensation
• Balance between generation and recombination:
• Dope with both donors and acceptors
po ⋅ no = ni 2
• N-type case:
• P-type case:
University of California, Berkeley
Dept. of EECS
EECS 105 Spring 20025 Lecture 1
Dept. of EECS
University of California, Berkeley
R. T. Howe
Compensation (cont.)
• More donors than acceptors: Nd > Na
no =
• Hole concentration:
po =
Dept. of EECS
University of California, Berkeley
4