Yong-Yang Chen
Outline
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Introduction
Experiment
Results and Discussion
Conclusion
References
Introduction
• Great effort had been exerted to improve the material
quality, light-extraction efficiency, and metal
semiconductor ohmic contacts of LEDs so that their
luminous efficiencies can be drastically improved.
• The configuration of InGaN/GaN MQWs also plays a key
role in the internal quantum efficiency (IQE) of LEDs.
• Increased IQE at higher current densities can be achieved
by spreading the carriers over a larger volume by
employing either a double heterostructure or a MQW
active region.
• Short-period InGaN/GaN MQWs were proposed to
facilitate the uniform distribution of the carrier.
• Increased InGaN well thickness may also help spread the
carriers over a larger volume to suppress Auger
recombination or carrier overflow.
• In this study,we aimed to demonstrate the light output
power enhancement of thick well short-period InGaN/GaN
MQW LEDs with thickness-fluctuated InGaN well. The
effects of thick well short-period InGaN/GaN MQW LEDs
with thickness-fluctuated InGaN well on the electrical and
optical properties of GaN-based LEDs,as well as the
fabrication process, are discussed.