CONCLUSION
In this simulation study, the efficiency droop behavior is
contributed by dislocation recombination, Auger recombination in
active region, and carrier overflow out of active region.
 Simulation results strongly suggest that at current densities from
10 to 100 A/𝑐𝑚2 , Auger recombination is the dominant
mechanism for efficiency droop behaviors, while at current
densities from 100 to 200 A/𝑐𝑚2 , carrier overflow becomes the
dominant mechanism for efficiency droop behaviors.
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REFERENCES
• Investigation of Efficiency Droop Behaviors of InGaN/GaN Multiple-Quantum-Well LEDs
With Various Well Thicknesses, Yun-Li Li, Member, IEEE, Yi-Ru Huang, and Yu-Hung Lai,
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, VOL. 15, NO. 4,
JULY/AUGUST 2009
• Efficiency droop behaviors of InGaN/GaN multiple-quantum-well light-emitting diodes with
varying quantum well thickness, Y.-L. Li,a Y.-R. Huang, and Y.-H. Lai, APPLIED PHYSICS
LETTERS 91, 181113 2007
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Thanks for your attention
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