SSD Development for ATLAS Upgrade Tracker
ATL-P-MN-0006 v.1 Development of non-inverting Silicon strip detectors for
the ATLAS ID Upgrade ( H. Sadrozinski, P. Allport, N. Unno +25
Institutions)).
“The goal of the program is the industrial pre-production of SSD optimized for
sLHC operation and includes both short and long strips.”
“In addition, the RD activity should take into account the needs of the module
development program and plan to have sensors available on the required
time-scale.”
Outline:
1.
Framework of R&D Program
2.
Recent Results
3.
Future Plans
4.
ATLAS07 Submission to HPK
5.
Budget
Hartmut F.-W. Sadrozinski, SCIPP: US-ATLAS Upgrade Meeting 5/3/07
SSD Development for the ATLAS Upgrade Tracker:
Overview
Goal: Identify optimal SSD technology and start commercial production.
P-type promise higher luminosity reach (underdepleted operation)
Concentrate on test pre-rad and post-rad
Electrical Characterization
Charge Collection: CC-V
Devices:
SMART SSD (RD50) Status: p, g and n irradiations done, in test
RD50 run with commercial 6” foundry (Micron), n and p irradiation underway
Start work with high volume supplier: HPK
ATLAS06: pilot run for investigation of geometry, n and p planned
ATLAS07: in preparation, PRR at HPK (June) and CERN (ID week July)
Hartmut F.-W. Sadrozinski, SCIPP: US-ATLAS Upgrade Meeting 5/3/07
Design for:
1*1015 neq/cm2 short strips, 4*1015 neq/cm2 long strips
(includes 2x safety factor)
New: p-type, neutrons
sATLAS Fluences for 3000fb-1
1.E+17
All: RTF Formula
n (5cm poly)
pion
proton
Fluence neq/cm2
1.E+16
1.E+15
1.E+14
1.E+13
1.E+12
0
20
40
60
80
100
Radius R [cm]
Hartmut F.-W. Sadrozinski, SCIPP: US-ATLAS Upgrade Meeting 5/3/07
120
MCz vs. FZ
Previous data: Liverpool FZ
allows low initial depletion voltage (<100V)
>10 kW-cm FZ, Good uniformity, Annealing affects under control
G. Casse et al
VCI ‘04
Adopt p-type FZ as Baseline
continue to investigate high-resistivity p-type MCz
Hartmut F.-W. Sadrozinski, SCIPP: US-ATLAS Upgrade Meeting 5/3/07
Development of tools to support testing:
Surface condition:
Interstrip capacitance and Isolation pre-rad and after TID
i-V and breakdown behavior (STD6 Contribution)
Charge collection:
Beta source (~30 Hz), 100ns shaping time pos and neg signals.
connect electrical parameter C-V with MIP Charge collection
(RESMDD06 Contribution)
Annealing studies:
Allow for elevated temperature
Hartmut F.-W. Sadrozinski, SCIPP: US-ATLAS Upgrade Meeting 5/3/07
Depletion: C-V and CCE: Temp and Frequency
C(V) ~ 1/d
CCE(V) ~ d
expected collected charge = 3.5 fC*Co/C(V)
At low temps, use low frequency! RT: 10 kHz,-10o C: 400 Hz, -20o C: 250 Hz
M. Petterson
et al.
RESMDD06
Hartmut F.-W. Sadrozinski, SCIPP: US-ATLAS Upgrade Meeting 5/3/07
Neutrons
SCIPP Measurements on p-type Mcz
with neutron irradiated sensors.
Absolute prediction of 1/C
Agrees well with CCE
CCE / C-V W09 p Mcz 1.7e-15 n/cm^2
2.5
Charge [fC]
2
1.5
1
cce
0.5
1/C -20C 250 Hz
0
0
200
400
600
Bias voltage [V]
Hartmut F.-W. Sadrozinski, SCIPP: US-ATLAS Upgrade Meeting 5/3/07
800
1000
Neutrons vs. Protons?
Caveats:
Binary vs. Analog (Single-strip vs. Sum?)
Median vs. Most probable
FZ vs. MCz, Starting Depletion Voltage
100 ns vs. 25 ns
Collected charge
Collected charge [e-]
2.0E+04
Casse et al: FZ, p neq=1.9e15
Petterson et al: MCz n 1.7e15 (prelim)
Casse et al: FZ, n 1.5e15
1.5E+04
1.0E+04
5.0E+03
0.0E+00
0
200
400
600
Bias Voltage
Hartmut F.-W. Sadrozinski, SCIPP: US-ATLAS Upgrade Meeting 5/3/07
800
1000
Collected charge
Vbias =800V
Charge collection
Collected charge
Vbias = 500V
Collected charge[e-]
2.5E+04
Collected charge[e-]
Short strips:
At target fluence and 500V Bias:
Sufficient yield for good signal-to-noise
2.5E+04
Casse et al: FZ, p irr.
Petterson et al: MCz n irra(prelim)
Casse et al, FZ, n irradiation
Petterson et al: MCz n irra(prelim)
2.0E+04
1.5E+04
1.0E+04
5.0E+03
0.0E+00
0.E+00
1.E+15
2.E+15 3.E+15
Fluence [1/cm2]
Casse et al: FZ, p irr.
Petterson et al: MCz n irra(prelim)
Casse et al, FZ, n irradiation
Petterson et al: MCz n irra(prelim)
2.0E+04
1.5E+04
1.0E+04
5.0E+03
0.0E+00
0.E+00
1.E+15
2.E+15 3.E+15
Fluence [1/cm2]
4.E+15
5.E+15
Hartmut F.-W. Sadrozinski, SCIPP: US-ATLAS Upgrade Meeting 5/3/07
4.E+15
5.E+15
Wafer: n MCz
Evidence for Double-Junction instead of “Inversion”.
1/C SMART n MCz Neutron/Proton irradiated
0.02
1/C [pF^1]
0.015
0.01
176-4 (-20C) n 5.3e14 Louvain
176-2 (-20C) n 4e14 Louvain
0.005
176-2 unirradiated
187-4 (-10C) p 1.4e14
0
0
100
200
300
400
Bias Voltage [V]
Hartmut F.-W. Sadrozinski, SCIPP: US-ATLAS Upgrade Meeting 5/3/07
500
600
Wafer: MCz SMART
Non-uniform doping density in MCz:
Simple simulation of parallel capacitors
with different depletion voltages
reproduces the 1/C2 curves.
1/C^2 W044-4 10kHz Vdep: 46.0 -> 77.6 V
2.5E-04
1.C^2 [pF-2]
2.3E-04
2.1E-04
10kHz
sim2
1.9E-04
1.7E-04
1.5E-04
40
50
60
Bias Voltage [V]
Hartmut F.-W. Sadrozinski, SCIPP: US-ATLAS Upgrade Meeting 5/3/07
70
80
MCz Wafer Uniformity with CCE: SMART vs. Micron
Median Q
Charge collection
at 3 positions
along strips:
3.5
3
SMART:
4.5 cm long
med Q [fC]
2.5
2
1.5
detector end
1
Micron has
excellent uniformity
along strips and
across the wafer
detector middle
0.5
detector front
0
0
50
100
Bias Voltage [V]
150
Med Q Micron p-type MCz (2552-7-13)
4
4
3
3
Micron:
6 cm long
2
center
far edge
PMFE edge
1/C norm
1
0
med Q [fC]
Med Q [fC]
Med Q: Micron p-type FZ (2551-7-13)
2
edge
PMFE
center
1/C norm
1
0
0
50
100
Bias Voltage [V]
150
0
200
400
Bias Voltage [V]
Hartmut F.-W. Sadrozinski, SCIPP: US-ATLAS Upgrade Meeting 5/3/07
600
800
Annealing
New data: CCE annealing for n-type and p-type MCz similar time structure as C-V
M. Petterson et al
Irradiated with 26 MeV p
to ~2*1014 cm-2
Binary readout 100ns,
90Sr beta source
1000min @60 oC = 514 days @RT
Bias Voltage for 90% effiency
180
160
140
120
100
80
60
40
20
0
p MCz 253-4
1
10
100
1000
10000
Anneal time @60C [min]
100000
Bias voltage [V]
Bias voltage [V]
Bias voltage for 90% efficiency
200
180
160
140
120
100
80
60
40
20
0
n MCz 187-4
1
10
100
1000
Anneal time @60C [min]
Hartmut F.-W. Sadrozinski, SCIPP: US-ATLAS Upgrade Meeting 5/3/07
10000
100000
Planned activity in FY ’08 and beyond
Continued Development of tools to support testing:
Mate SCT hybrid (20ns ) with custom quick-disconnect Sensor board
Work on SCT DAQ: negative pulses
Improve thermal management
Testing of MICRON mini-SSD pre- and post-rad
Issue: Evaluate role of resistivity of wafer
FZ: ~20kW-cm (Micron) vs. 8 kW-cm (HPK), MCz ~ 2kW-cm (Micron and HPK)
Initially Depletion Voltage:
FZ 60 V (Micron) vs. 140 V (HPK) MCz ~ 500 V (Micron and HPK)
Testing of ATLAS06, ATLAS07 (HPK), ATLASxx mini-SSD
Surface condition pre- and post-rad (p, n, g): Optimize isolation and capacitance
Charge collection pre- and post-rad (p, n, g): Optimize wafer resistivity
Hartmut F.-W. Sadrozinski, SCIPP: US-ATLAS Upgrade Meeting 5/3/07
Quick-Disconnect Sensor Board
Allows both electrical and dynamic testing of sensors pre-rad/post-rad/post-anneal
Bonding is bottle-neck: use connectors!
Hartmut F.-W. Sadrozinski, SCIPP: US-ATLAS Upgrade Meeting 5/3/07
Peltier based Cooling System
Cooling of irradiated sensors required both for electrical and dynamic testing.
Present mode of spilling LN2 into a thermal enclosure is reliable, but clumsy / wasteful.
Peltier based system promises good uniformity.
Temp vs. Heat Removed
Chiller 0C, Peltier Current: 4.40 Amps
-21
o
Temperature [ C]
-20
-22
-23
-24
-25
0
0.2
0.4
0.6
0.8
Heat Input [W]
Hartmut F.-W. Sadrozinski, SCIPP: US-ATLAS Upgrade Meeting 5/3/07
Test Program: with 1 cm x 1 cm test structures
Testing of ATLAS Upgrade Sensors
Company un-diced wafers
i-V and C-V, processing control test structures, R(poly).
Single-strips: C(coupl), R(bias), shorts
ATLAS
Electrical: both pre-rad and post-rad
i-V
C-V
Cint
Rint
R(Al)
SSD / Test diodes
CCE
post-rad only ?
Beta source
Laser
TSC
n
p
p
Lubljana
CERN
PSI
Irradiations
April - Dec.
May - Oct
August '07
Hartmut F.-W. Sadrozinski, SCIPP: US-ATLAS Upgrade Meeting 5/3/07
Irradiation Program: Neutrons
Lubljana: (Marko Mikuz)
- available all year upon short notice (week)
- flux > 1012 n_eq/(cm2.s), downgradeable by reactor power
- TID ~ 100 kRad for 1014 n_eq/cm2 (> kRad/s)
- sample width ~60 mm, length ~150 mm
- bias & cooling - difficult
Suitable for irradiations of bare sensors, depending on the design we adopt (width !).
For modules need to be careful, activation issues might be serious at the target
fluences. The sensors (Si, Al) cool down quite efficiently (days), so mounting on
evaluation boards/modules could be done post-irradiation.
Hartmut F.-W. Sadrozinski, SCIPP: US-ATLAS Upgrade Meeting 5/3/07
Irradiation Program: Neutrons
Louvain: (Otilia Militaru)
UC Santa Cruz had two runs in late 2006 (2*1014 and 2*1015 ).
Damage coefficients about 2x larger than at 1 MeV.
Good dosimetry possible
TID ~1%?
Cooling possible
Hartmut F.-W. Sadrozinski, SCIPP: US-ATLAS Upgrade Meeting 5/3/07
Irradiation Program: Pions
PSI in August 2007 with RD50, CMS
Contact: Tilman Rohe, PSI
Target fluence about 2*1015
Limited number of small devices ~40?
Irradiation Program: Protons
RD50 Runs in 2007: May, July, September
Contact: Michael Moll, Maurice Glasser
Hartmut F.-W. Sadrozinski, SCIPP: US-ATLAS Upgrade Meeting 5/3/07
ATLAS07
•
Purpose
– Full square
– Usage in 2008
•
Delivery target
– Dec. 2007
•
Wafer
– 150 mm p-FZ(100)
– 320 µm thick
•
n-strip isolation
– Individual p-stop
•
Stereo
– 40 mrad
– Integrated in half
area
– Dead area: 2 mm
•
Strip segments
– 4 for SS (but still true for 4% limit?)
– LS: segments wire-bonded
Hartmut F.-W. Sadrozinski, SCIPP: US-ATLAS Upgrade Meeting 5/3/07
ATLAS07 specification
• Issues remaining
– location of Bonding
pads
– Most likely to add
one more pad at
centre of strip
• 5 pads per strip
Hartmut F.-W. Sadrozinski, SCIPP: US-ATLAS Upgrade Meeting 5/3/07
ATLAS07 Fabrication
• Schedule from HPK
–
–
–
–
–
–
Delivery
Fabrication incl. testing (3 m)
Acquiring wafers (2 m)
Designing masks (2 m)
Finalizing specifications
Wafer specification
Dec 07
Sep 07
Jul 07
Jul 07
in Jul 07
Beg Jun 07
• p-type FZ vs. MCZ
• Financing
– Pro rata basis
Hartmut F.-W. Sadrozinski, SCIPP: US-ATLAS Upgrade Meeting 5/3/07
ATLAS07 Review
• Purpose
– To review and finalize the design and specification of the
upgrade silicon microstrip sensor to be fabricated by the end
of 2007 (ATLAS07)
– ATLAS07 serves sensor needs in 2008
• till ATLAS08 comes in the end of 2008
• Review date
– 2nd July, during the ID week at CERN
• Steps to the review
– Mid May: Pre-meeting
– 18-19 June: Pre-meeting at KEK
• 20 June: Meeting with HPK in Japan
– 2nd July: Review date
Hartmut F.-W. Sadrozinski, SCIPP: US-ATLAS Upgrade Meeting 5/3/07
Sensor Technology Budget
Activity
SSD
Short strip SSD
SSD Samples
Test structures
Electrical Characterization
Assembly
Efficiency Measurements
Irradiations
Electrical Characterization
Efficiency Measurements
DAQ
Sensor Board
Design+Layout
Fab
Parts
Test
Assembly
Total Labor
Labor
Domestic travel
Foreign Travel
M&S
Total direct
Indirect 26%
Total FY2008
FY 2008
Labor
FTE
WBS
4.1.1.2.1
Enginer
Tech
Tech
Layout Assembly Assembly
0.45
0.28
0.57
0.28
0.28
0.57
0.50
0.11
0.11
0.07
3.24
UG
Testing
Tech
Testing
0.23
Tech
Testing
0.23
0.28
0.28
0.14
0.14
0.28
0.25
0.28
0.14
1.33
0.68
0.14
0.28
0.25
0.11
0.11
0.11
0.07
0.07
0.40
133.552
4.000
6.000
37.000
180.552
46.944
227.496
Hartmut F.-W. Sadrozinski, SCIPP: US-ATLAS Upgrade Meeting 5/3/07
0.65