University seminar series at Stanford on
"Bio-applications of Nanotechnologies"
Japanese Industry’s Vision
and
Recent Activities of Nanotechnologies
18 April 2002
Michiharu Nakamura
Chairman, Sub-committee on Nano-Technology
Committee on Industrial Technology
KEIDANREN
日立の概要
Reform of Japanese social systems
The Government
- is trying to recover from the current recession
- is trying to promote structural reform by introducing
deregulation, privatization of national agencies, etc.
- recognizes that “Science and Technology” is one of
the main driving forces for economic growth and
the progress of society
Universities
Large companies
- are also introducing new management systems
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To enhance science and technology in Japan
日立の概要
The Council for Science and Technology Policy
was established in Jan. 2001 to play a role of a
source of wisdom to support the Prime Minister.
“The 2nd Science and Technology Basic Plan”
- allocates S&T resources with the highest priority
given to
(1) Life Sciences, Health and Medical Treatment
(2) Information and Telecommunications
(3) Environmental Science
(4) Nanotechnology and Materials
(5) Others: New energy sources, manufacturing technologies,
social infrastructure, new frontier science
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universities’ pioneering works
on nano-technologies
Japanese
日立の概要
1.Prof. Ryogo Kubo （1962） （J. Phys. Soc. Jpn. 17 (1962) 975）
Discovery of “Kubo-effect” in sub-micron size metals
New physics for nano-scale metal/semiconductor
“Coulomb-blockade effect”
“SET”
2.Prof. Ryoji Ueda （1970`s）
New physics for ultra fine particles
Direct observation of structural changes in ultra-fine
particles (ERATO: Hayashi project)
3.Prof. Norio Taniguchi （1974）
Inroduced the concept of nanotechnologies at ICPE
4.Prof. Hiroyuki Sakaki （1975～）
Artificially fabricated semiconductor nano-structures,
such as ultra-thin films, quantum wires, quantum boxes
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Carbon nanotube
Discovered by Dr. Sumio Iijima (1991)
New science fields in
physics and chemistry
has been established
- Semiconductor/metal transition
- Higher conductance than metals
- Large magnetic resistance
Progress in fabrication
technologies
（Under the permission of Mr. Sone, NEC）
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R&D strategy for nano-technology in Japan
n-Plan 21
proposed by
KEIDANREN
(2001.3.27)
- Create technical innovations in IT, Biotechnology,
Energy/environment, and materials
- Focus R&D resources more effectively to expand
impact on industry and society
Flagship Projects
Challenge to the Future Projects
Exploratory Research
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R&D strategy for nano-technology in Japan
Flagship Projects
R&D focused on practical applications and
industrialization of them within 5 to 10 years
Examples
Next-generation semiconductor technology
ASUKA (2001 - 5 years)
MIRAI (2001 - 7 years)
HALUKA (2001 - 3 years)
100 - 70 nm
70 - 50 nm
Terabit-class information storage technology
New devices for Peta-b/s communication
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R&D strategy for nano-technology in Japan
Challenge to the Future Projects
R&D to create revolutionary fundamental
technologies to support industry
Examples
New materials by controlling nano-structures
Medical/healthcare by fusing biotechnology and
nano-systems
Measurement with accuracy below nm scale
Nano-scale fabrication
Simulation
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R&D strategy for nano-technology in Japan
Exploratory Research
In-depth research of nano-scale particles
and nano-structure materials
Examples
New physics
New chemistry
New science
New theories and methods of analysis and simulation
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What is nonotechnology?
10
1 mm
Magnetic/Optical
disks
Top down
Semiconductor
devices
To make
Breakthrough by
Nanotechnology
Red Brick Wall
10
8
6
4
Protein molecule
2
DNA
Bottom up
Fusion 10
1 nm
Hydrogen atom
0.1 nm
10
10
100 nm
10 nm
10
1970
1980
1990
2000
Number of atoms/bit
Fabrication size
10 mm
1
2010
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Nano-technology for IT and Electronics
Application
Field
IT and Electronics
・Electronic Devices
・Magnetic Devices
・Optical Devices
Environment and Energy
Examples:
・Mobile Computer
・Information Storage with
103 Times Larger Capacity
・Broad-Band Internet
・Sheet Display
・Quantum Computer
Health and Welfare
New Materials
Revolutionary improvement
in material properties
Nanotechnology as
the fundamentals
Measurement, Control, fabrication and Simulation
in atomic / molecular-level scale
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50nm CMOS technology
日立の概要
High Speed Performance
SiO2
Spacer
Gate
SiN
Si-sub.
1.4
Relative Speed
CoSi2
1.2
Newly Developed
Conventional
1.0
0.5
1.0
Voltage(V)
1.5
TEM photograph
IEDM 2001 (Hitachi Central Research Lab.)
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Experimentally
日立の概要
fabricated device
Non-volatile memory cell with Si nano dots
Gate length/width: 0.5/ 3μm
Tunnel oxide thickness:7 nm
15nm
Interlayer dielectric film:
0.1μm
Si nano dots:
diameter ~10nm
T. Ishii et al., IEDM, 2000, p.305
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Semiconductor technology in the road map
(ITRS 2000 Update Edition)
Year
Process Generation (nm)
MPU Gate Length (nm)
DRAM Scale (bit)
Red Brick Wall
1999 2001 2004
180
130
90
120
90
65
256M 512M 1G
2008
60
40
6G
Main Requirements to Achieve the Above Goal
Alignment Accuracy(nm)
65
31
45
Pattern Deviation(nm)
13
9.0
6.3
Gate Insulation (nm)
1.9-2.5 1.5-1.9 1.2-1.5
k of Layer Insulation
3.5-4.0 2.7-3.5 1.6-2.2
2011
40
30
16G
2014
30
20
48G
26
18
13
4
3
2
0.8-1.2 0.6-0.8 0.5-0.6
1.5 <1.5 <1.5
Prospective technology in research exists.
No prospective technology has been found yet.
Nanotechnology Era
Technological breakthrough is required.
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Research and development targets
Action in both Practical Technology Development
and Analytical R&D Is Required to Establish
System on Chip (SoC) Technology.
●High Permittivity (high-k) Gate Oxide Film and
Its Processing Technology and Related Measurement
and Analysis Technology
●Low Permittivity (low-k) Interlayer Insulation and
Its Processing Technology and Related Measurement
and Analysis Technology
●Lithography Mask and Related Measurement Technology
●New Device and Process Technology
●System Architecture
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MOS devices (Goal: Planar MOS breakthrough)
・High-k Gate Insulation Material Development
→ U.S. and Europe are leading. Japan is launching Asuka Project.
・Novel Structure Devices → Research on Vertical MOS and SOI
SiO2-Equivalent Gate
Insulation Thickness (nm)
Necessity of High-k Gate Insulation Film Development
～ 30 nm
Gate Insulation
< 2 nm
3.0
2.0
Source
SiO2
1.0
0
Leak Current Suppression
1999
Drain
New gate insulation film
development is necessary.
SiON, Si3N4, Al2O3
Metal Oxide
κ ( 10-20)
Pr2O3
ZrO2 HfO2
κ(>20)
Metal Oxide
2002
2005
2008
2011
2014 (Year)
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Memory density trend in memory devices
10 4
Areal Memory Density (Gb/in 2 )
10 3
Near Field Optics
Opto-Magnetism
Thermal Fluctuation Limit
10 2
+100% a year
10
10-2
Optical Disk
1
10-3
10 -1
10 -2
10-1
Magnetic Disk
10-4
+30% a year
10 -3
10-4
10 -5
1970
+40% a year
DRAM DVD-ROM Magnetic
Disk
Semiconductor
Memory (DRAM)
1980
10-5
10-6
1mm
Unit Memory Size
1990
2000
Areal Memory Density (Gb/mm2 )
10
Perpendicular
Atomic
Magnetic Recording
Manipulation
(Conference Presentation) Patterned Media
1
10 -7
2010 (Year)
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From longitudinal to perpendicular
Longitudinal
Shield
layer
GMR
element
Magnetic flux
Perpendicular
Single-pole-type
writer
Ring-type
writer
Auxiliary
pole
Main pole
Recording layer
Magnetic flux
Under layer
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SPT/GMR-merged perpendicular head
（Cross sectional view）
Main Pole
GMR
Sensor
ABS
Coil
Bottom Shield
Auxiliary Pole / Upper Shield
■ SPT Writer
Main pole ：
Tww = 250 nm
PT= 400 nm
Bs = 16 kG
Aux. pole :
PT = 2500 nm
Bs = 10 kG
■ GMR reader
Twr = 200 nm
Gs = 80 nm
Collaboration with Tohoku University and AIT
partly carried out under the ASET program, NEDO
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Recorded bit patterns (MFM)
7.5×7.5μm
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Nano-glass material for optical memory
Co3O4－Nano structure of Glass thin film
(TEM photograph）
Response and Refractive index shift
by Laser irradiation
Wave length：650nm
Co3O4 Columnar nano-particles
Δｎ/ｎ＝５.５％
Amorphous grain（grass）
2.65
Laser intensity
(mW)
Refractive
index n
2.75
2.55
4
irradiation ON
OFF
2
0
-50
0
50
100
150
200
Number of particles ：311
Mean Diameter ｒ ：13.3nm
Deviation δ：3.97nm
Variance δ/ｒ ：29.8％
Pitch of each grain：1nm
Elapsed time（nsec）
Large refractive index shift is caused by
interaction between nano-particles and
amorphous grain(glass).
50nm
Micro-structure of nano-glass
（By Naito, Hitachi）
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High-density optical memory based on
new super-resolution film
Improvement of Recording Density by using
Super-Resolution Film ⇒ more than 1 Tb/in2
Blue laser beam
Research targets
Δｎ/ｎ
Superresolution film
Target
20%
nsec
Present
5.5％
10nsec
Recording layer
Reflective layer
Glass Substrate
Response
Time
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Nano-optical devices by photonic crystal
Sharp bend
of optical path
Miniaturization of
integrated optical circuit
Controllability of light propagation speed
based on coupling constant shift
Efficient control
of high speed light-pulse
Optical field
L
Perfect band gap 2-D crystal
Optical path by photonic crystal defect
(J. D. Joannopoulous, Nature , 386, 143 (1997))
(K. Hosomi and T. Katsuyama, PECS3 (2001))
Towards gaining further optical property
Demultiplexer based
on micro-resonators
λk
Optical bend path
Dispersion compensator
based on coupling defect
Multiplexer
λ1・・λn
λq
Micro laser
To receivers
Modulater based
on micro-resonators
WDM Add/Drop module by photonic crystal - Miniaturized integrated optical circuit
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Bio Nano-technology for Medical & Welfare
Application
Field
Bio Nanotechnology
・Medical sensors
・Gene sensors
・DNA/Protain chips
Example
・Highly sensitive analysis
of cancer cell
・High speed DNA separation chip
・Protein chips for drug screening
・Drug delivery system
・Anesthesia by using remote
micro-manipulator
Environment and Energy
IT, Electronics
New Materials
Revolutionary improvement
in material properties
Nanotechnology as
the fundamentals
Measurement, Control, fabrication and Simulation
in atomic / molecular-level scale
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Era of proteome
DNA: Life information
Gene information 3 billion
Gene 40k types
･････GATCCGAGATGCATGACT･･････
Cell 60 trillion
Gene/Protein Function
･････CTAGGCTCTACGTACTGA･･････
Protein: Life phenomenon
・100k types
・interact each other
Study on Protein Structure
Genome-based drug
Order-made medicine
Gene Analysis ＆ Proteomics
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Optical bio-sensing with cap-shaped Au nanoparticles 1
Reflection from nanoparticles
SEM micrograph of the
gold particle monolayer
Intensity
Intensity
Incident
Light (white)
Wavelength
Gold Particle (20nm)
Reflected
Light
Wavelength
Optical Near-Field
Polymer Sphere (110nm)
Gold Thin Film
(20nm)
Polymer Substrate
Resonant absorption of light. The wavelength of the absorption
maximum depends on the refractive index of the surrounding.
Basic nano-tech.：Measurement・Simulation
IT, Electronics
Medical, Welfare
Environment/ Energy
New materials
Revolutionary improvement
in material properties
electric・magnetic・optical・strength・thermal
Basic
Nanotechnology
Atomic,Molecular
scale measurement
/control/fabrication
/simulation
・Ultra high voltage SEM
・STM, AFM
・CD-SEM
・Nano-scale machining
by self-organization
・Electron beam lithography
・Multi-scale simulation
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1M Volt holography electron microscope
Super high voltage electron microscope was developed. World record
（49.8 pm) of resolution power for crystal lattice was achieved.
49.8 pm
49.8 pm
1MV Holography Electron
Microscope
49.8 pm
0.1nm
Left: Crystal lattice stripes of Au thin film,
pitch of which is 49.8 pm, Light: the model
of Au crystal unit lattice
CREST/SORST、Collaboration with Univ. of Tokyo
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日立の概要
Thank you. . .
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