Research Journal of Applied Sciences, Engineering and Technology 4(4): 282-288, 2012
ISSN: 2040-7467
© Maxwell Scientific Organization, 2012
Submitted: July 28, 2011
Accepted: September 25, 2011
Published: February 15, 2012
Analysis of the Diffusion Capacitance’s Efficiency of the Bifacial Silicon
Solar Cell in Steady State Operating Condition
1,2
S. Mbodji, 1B. Mbow, 3I. Zerbo and 1G. Sissoko
Laboratoire des Semi-conducteurs et d’Energie Solaire, Département de Physique,
Faculté des Sciences et Techniques, Université Cheikh Anta Diop, Dakar, senegal
2
Section de Physique de la Filière MPCI de l’Université de Bambey-Sénégal, BP
30 Bambey-senegal
3
Laboratoire de Matériaux et Environnement, Département de Physique, Unité de Formation et
de Recherche en Sciences exactes et Appliquées, Université d’Ouagadougou, Burkina Faso
1
Abstract: The aim of this study is to study the diffusion capacitance’s efficiency of the n+-p-p+ bifacial solar
cell. The dependence of the efficiency of the diffusion capacitance on both the excess minority collection region
in open circuit and short-circuit operating points of the solar cell has been itemised for varying grain size (g),
grain boundary recombination velocity (Sgb), wavelength (8) and illumination mode (front side and both front
and rear sides). It is shown that the diffusion capacitance’s efficiency which increases with grain size (g) and
both front and rear sides illumination mode and decreases with grain boundary recombination velocity (Sgb)
and higher wavelength (8) can be linked to the conversion efficiency of the solar cell.
Key words: Bifacial solar cell, diffusion capacitance’s efficiency, grain size, grain boundary recombination,
junction and back side recombination velocities
the solar could be considered as a plane capacitor (Barro
et al., 2008a; Sissoko et al., 1998a; Mbodji et al., 2010b).
The conversion efficiency of the solar cell is the ratio
between the maximum electric power output provided by
the solar cell and the electric power of the incident light
received by the photovoltaic cell (Dicker et al., 2002).
Here, in this study we compute in a theoretical 3D
approach the expression of the diffusion capacitance’s
efficiency of the solar cell. We analyze the effect of grain
size (g), grain boundary recombination velocity (Sgb),
wavelength (8) and the illumination mode on this
diffusion capacitance’s efficiency.
INTRODUCTION
Applying the concept of junction recombination
velocity which quantifies carrier flow through the
junction, we have surveyed the bifacial solar cell’s
diffusion capacitance for three illumination modes: front
side, back side and both front and back sides (Mbodji
et al., 2010a, b). In these papers, we deal with a 3D
simulated modelling of polycrystalline silicon cell
developed to determine the effect of grain size (g), grain
boundary recombination velocity (Sgb) and illumination
wavelength (8) on diffusion capacitance of the cell at any
operating point.
Applying the impedance spectroscopy method
(Chenvidhya et al., 2003; Anil Kumar et al., 2001; Steckl
and Sheu, 1980) with both Nyquist and Bode diagrams,
some authors (Dieng et al., 2009) determined theorically
the solar cell’s capacitance for various magnetic fields
intensity.
In previous studies (Barro et al., 2008a; Sissoko
et al., 1998a; Mbodji et al., 2010b), normalized carriers
density versus density defined two minority carriers
regions of the solar cell. The first one corresponding to
positive slopes and closed to the junction is the collection
region Z0. The second region with negative slope
corresponds to the recombination in the bulk and the back
of the solar cell. The relation between Z0 and the diffusion
capacitance makes it possible to show that the junction of
MATERIALS AND METHODS
Assumptions: The bifacial BSF n+-p-p+ polycrystalline
solar cell is a device made up with small grains; studying
polycrystalline solar cells involves the sampling of a grain
model. This model can be either spherical, cylindrical or
columnar.
In this study, we use a fibrously oriented columnar
model (Dugas, 1994) as presented below (Fig. 1a to c)
with the following assumptions:
•
We apply Cartesian coordinates and the considered
grains are square-cross-sectioned (0.002 cm # g # 0.2
cm) and their electrical properties are homogeneous
Corresponding Author: S. Mbodji, Laboratoire des Semi-conducteurs et d’Energie Solaire, Département de Physique, Faculté
des Sciences et Techniques, Université Cheikh Anta Diop, Dakar, senegal
282
Res. J. Appl. Sci. Eng. Technol., 4(4): 282-288, 2012
(a)
(b)
(c)
Fig. 1: (a) Fibrously oriented columnar grain, (b) Isolated grain, (c) bifacial solar cell
•
•
•
•
The illumination is uniform. We then have a
generation rate depending only on the depth in the
base z and wavelength 8.
The grain boundaries are perpendicular to the
junction and their recombination velocities
independent from any generation rate under an
illumination AM1.5. So the boundary conditions of
continuity equation are linear.
The contribution of the emitter and the space charge
region are neglected (Dugas, 1994), so this analysis
is only developed at the level of the base region
Tthe thickness H and the base doping level Nb are
130 mm (Dugas, 1994; Linda, 1998), respectively.
D and L are respectively the excess minority carrier’s
constant and length diffusion.
Gu(z) is a position contingent to the carrier’s
generation rate and can be written as (Sissoko
et al., 1998b):
⎡ ε ⋅ exp
⎤
Gu ( z) = α ⋅ I 0 ⋅ ( I − R) ⋅ ⎢
⎥
(
−
α
⋅
z
)
+
β
⋅
exp(
−
α
⋅
(
H
−
z
))
⎣
⎦
g = 1 and $ = 0 for front side illumination mode (u =
fr) and g = $ = 1 if the solar cell is illumined in both front
and rear sides (u = d).
" and I0 are respectively the absorption coefficient of
light associated to the wavelength 8 and the incident
photon flux (Green and Keevers, 1995) .
The general solution of the continuity equation
(Eq. 1) can be written as (Dugas, 1994; Deme et al.,
2010):
Excess minority carriers’ density: The excess minority
carrier distribution *u (X,Y,Z) in the solar cell’s base is
derived by solving the following three-dimensional
continuity equation (Eq. 1):
⎛ ∂ 2δu ( x , y , z ) ∂ 2δu ( x , y , z ) ⎞
⎜
⎟
+
⎜
⎟
∂2X
∂2y
D⋅⎜
⎟
2
⎜ ∂ δu ( x, y , z)
⎟
+
⎜
⎟
⎝
⎠
∂ 2z
−
(2)
δu ( x , y , z) =
∞
∞
k
j
∑∑Z
kj ,u
( z) ⋅
(3)
cos( x ⋅ ck ) ⋅ cos( y ⋅ c j ) ⋅
(1)
δu ( x , y , z )
= − Gu ( z )
τ
Zkj,u(z) express the z dependence of the excess minority
carrier’s density *u (x, y, z), k and j varies from 1 to 30.
ck and cj are two coefficients obtained from the boundary
conditions presented in Eq. (4) and (5).
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Res. J. Appl. Sci. Eng. Technol., 4(4): 282-288, 2012
The boundary conditions are as follows (Dugas,
1994; Deme et al., 2010; Mbodji et al., 2010a, b):
C
In the x direction, at x = ±
D⋅
∂δu( x , y , z )
∂x
⎛ z ⎞
⎛ z ⎞
⎟ + Bkj ,u ⎜
⎟
Zkj ,u ( z ) = Akj ,u ⋅ ch⎜⎜
⎟
⎜L ⎟
⎝ Lkj ⎠
⎝ kj ⎠
g
:
2
−
g
x =±
2
∂δu ( x , y , z)
∂y
g
:
2
C
= ± Sgb ⋅ δu ( x ,m
∂δu ( x , y , z)
∂z
z =0
= SFu ⋅ δu ( x , y , z = 0)
g
2
(5)
g
, z)
2
Replacing Eq. (3) into (4) and (5), and rearranging
the different terms, we obtain respectively Eq. (6) and (7).
Sag
⎛ ck ⋅ g ⎞
tan⎜
⎟ =
⎝ 2 ⎠ ck ⋅ D
(6)
Sab
⎛ cj ⋅ g ⎞
tan⎜
⎟ =
⎝ 2 ⎠ cj ⋅ D
(7)
and
Both Eq. (6) and (7) are known as transcendental
equations because they cannot be analytically resolved;
we apply the well-known “Newton-Raphson” numerical
method (Goyal, 2007) to obtain the solutions ck and cj.
Putting Eq. (3) into (1), substuting the expressions
generated by appropriate values and terms and
considering the orthogonality of the cos(ckx) and cos(cjx)
family, we obtain:
Zkj′′ ,u ( z ) −
−
C
⎛ g ⋅ cj ⎞
⎛ g ⋅ ck ⎞
16 sin⎜
⎟
⎟ ⋅ sin⎜
⎝ 2 ⎠
⎝ 2 ⎠
(
sin( ck ⋅g )
ck
)(
g+
sin( c j ⋅g )
cj
)
∂δu ( x , y , z)
∂z
z= H
= − Sbu ⋅ δu ( x , y , z = H )
−
(8)
(9)
The two surface recombination velocities of a solar
cell under illumination is then correlated to the following
parameters and quantities (Diallo et al., 2008): grain size,
grain boundary recombination velocity, wavelength,
incident photons, doping level through the diffusion
coefficient, recombination in the bulk through the
diffusion length, cell thickness and illumination mode.
Gu ( z )
1
2
(12)
Sbu is the back surface recombination velocity. It
quantifies the rate at which excess minority carriers
are lost at the back surface of the cell (Diallo et al.,
2008; Sissoko et al., 1996). Through the derivation of
the photocurrent, for each illumination mode, the
expression of Sbu is provided.
with
⎛ 1
⎞
Lkj = ⎜ 2 + ck2 + c2j ⎟
⎝L
⎠
(11)
SFu, the junction recombination velocity (Diallo
et al., 2008; Sissoko et al., 1996) stands for the sum
of two terms: SFU = Sf0u+Sfj , where Sfj is imposed
by the external load defining the current flow rate
and of course the operating point of the solar cell.
Sf0u is defined as the intrinsic junction recombination
velocity and is related to the shunt resistance due to
the internal load in the solar cell, therefore there are
losses occurring across the junction. For each
illumination mode, the intrinsic junction
recombination velocity can be computed by means of
the derivative of the photocurrent (Diallo et al., 2008;
(Sissoko et al., 1996).
At the back surface (z = H):
D⋅
Zkj , u( z )
=
L2kj
D ⋅ ck ⋅ c j ⋅ g +
At the junction (n+-p interface (z = 0)):
D⋅
y =±
⋅ Gu ( z ))
Constants Akj,u and Bkj,u are determined using the
following boundary conditions (Dugas, 1994; Deme et al.,
2010; Mbodji et al., 2010a,b):
In the y direction, at y = ±
D⋅
D ⋅ ck ⋅ c j ⋅ Fkj
(10)
(4)
g
= ± Sgb ⋅ δu ( ± , y , z )
2
C
⎛ g ⋅ cj ⎞
⎛ g ⋅ ck ⎞
16. L2kj ⋅ sin⎜
⎟
⎟ ⋅ sin⎜
⎝ 2 ⎠
⎝ 2 ⎠
The solution of Eq. (8) can be written as follows:
284
Res. J. Appl. Sci. Eng. Technol., 4(4): 282-288, 2012
Cu ( z , g , Sgb, SFu , Sbu , λ )
dQu ( z , g , Sgb, SFu , Sbu , λ )
=
dVu ( z , g , Sgb, SFu , Sbu , λ )
C -1fr (10 7 F-1cm 2 )
Diffusion capacitance and solar cell junction
properties: When excess minority carriers diffuse in the
base of a solar cell at a given time all the generated
carriers do not cross the junction; and the net carrier
charge in the base induces an equivalent capacitance, i.e.
diffusion capacitance Cu (Mbodji et al., 2010a, b; Barro
et al., 2008a; Sissoko et al., 1998a; Deme et al., 2010).
The diffusion capacitance stems from transport of excess
minority carriers in the base of the cell. Hence, the
diffusion capacitance is the outcome of the change of the
free carrier charges, at the edge of the space charge layer
(Mbodji et al., 2010a, b; Barro et al., 2008a; Sissoko
et al., 1998a; Deme et al., 2010). Its expression is then:
[
02 4
0.0
0 .0
02
2
02
0 .0
18
0. 0
0
6
01
0.0
01
4
2
0 .0
01
0 .0
01
0. 0
Fig. 2: Dependence of inverse of the diffusion capacitance on
the extension region of the junction for different
junction recombination velocity; g = 20 mm, Sgb =
+103cm/s, 8 = 800 nm
(13)
]
1.4
Extntion region Z0,fr(cm) of the junction
illumination mode) and calculate the inverse of the
diffusion capacitance of the solar cell. Plot of this inverse
diffusion capacitance versus extension region of the
junction is given in Fig. 2.
Plot shows that inverse of diffusion capacitance
versus extension region of the junction is a straight line.
So, the junction of solar cell in steady state is considered
as a plane capacitor. This result agrees with these
predicted by Mbodji et al. (2010b).
Cu ( z , g , Sgb, SFu , Sbu , λ )
q
⋅ δ u ( z , g , Sgb, SFu , Sbu , λ ) + m0
VT
1.8
1
where, QU(z, g, Sgb, SFu, Sbu, 8) = q.*u (z, g, Sgb, SFu,
Sbu, 8), dVu is the derivation of the photovoltage and q is
the electron charge.
When we introduce the thickness derivation (dz),
calculations provide the final expression of the
capacitance:
=
2.2
Efficiency of the diffusion capacitance solar cell:
Expression of diffusion capacitance’s efficiency: In
study Barro et al. (2008b), the collection region of
minority carriers corresponds to the extension region of
the junction Z0,u which is related on the junction
recombination velocity SFu. Either increasing or
decreasing the junction recombination velocity gives the
limits of Z0,u which occurs between Z0,oc,u the open circuit
extension region of the junction and Z0,sc,u the one of the
short-circuit. Because the junction voltage is not affected
by the variation of parameters SFu, g, Sgb, or 8 (Barro
et al., 2008a; Sissoko et al., 1998a; Deme et al., 2010),
we can write:
(14)
VT is the thermal voltage and m0 = n2i/Nb with Nb the base
doping density and ni intrinsic carriers density.
This expression of the diffusion capacitance is, in
fact, useful when studying the diffusion at the junction
unlike other studies which require the nature of the
junction, the separation of the quasi-Fermi potentials in
the space charge layer and the magnitude of the applied
voltage. In diffusion capacitance studies, the parameters
usually considered are nature of the junction (Liou and
Lindholm, 1988), electron fluency level and temperature
(Sharma et al., 1992), and cell bias voltage (Anil kumar
et al., 2003).
As characteristic parameter of the solar cell, the
diffusion capacitance Cu depends on variables g, Sgb, SFu,
Sbu and 8 since the base thickness and doping density are
fixed.
In some studies (Mbodji et al., 2010a, b; Barro et al.,
2008a), authors reported that the diffusion capacitance Cu
is a calibrated function of the junction recombination SFu
and can be used as characterization parameter for
analyzing solar cell efficiency.
Here, we consider an ideal photovoltaic cell. So that,
the shunt and series resistances of the solar cell are
ignored (Diallo et al., 2008; Mbodji et al., 2010b;
Colomb et al., 1992).
Considering the normalized carriers density, we
extract the extension region Zo,fr (for the front side
Qsc,u =
Z0, oc ,u
Z0, sc ,u
Qoc,u
(15)
Qsc,u and Qoc,u are junction charge in short-circuit and
open circuit, respectively.
As the junction is considered as a plane capacitor
(Barro et al., 2008a; Sissoko et al., 1998a; Deme et al.,
2010), energies in short-circuit Usc,u and in open circuit
Uoc,u are related by:
U sc ,u =
Z0, oc,u
Z0, sc,u
⋅ U oc ,u
The energy change is then expressed as:
285
(16)
⎛
Zo , oc ,,u ⎞
⎟
Δ U u = U oc,u − U sc ,u = U oc,u ⋅ ⎜⎜ 1 −
Zo , sc ,,u ⎟⎠
⎝
Effciency(%) of solar cell’s diffusion capacitance
Res. J. Appl. Sci. Eng. Technol., 4(4): 282-288, 2012
(17)
If we define the efficiency of diffusion capacitance of the
solar cell as
ηu =
Δ Uu
U oc,u
(Deme et al., 2010), its
expression becomes:
ηu ( g , Sgb, λ ) = 1 −
Z0, oc ,u ( g , Sgb, λ )
Z0, sc ,u ( g , Sgb, λ )
(18)
(19)
and
C0, sc ,o ( g , Sgb, λ ) =
ε⋅S
Z0, sc ,u ( g , Sgb, λ )
3.0
λ = 900nm
2.5
λ = 920nm
2.0
λ = 940nm
1.5
1.0
1000
100
316
10
32
Grain boundaries recombination velocity Sgb(cm.s-1)
Effciency (%) of diffusion capacitance
ε⋅S
Z0, oc ,u ( g , Sgb, λ )
λ = 880nm
3.5
Fig. 3: Efficiency (%) of diffusion capacitance of the solar cell
versus grain boundaries recombination velocity
Sgb(cm/s): g = 20 :m, H = 130 :m and D = 26 cm2/s
Z0,oc,u and Z0,sc,u are related to the diffusion capacitance by
(Deme et al., 2010):
C0, oc ,u ( g , Sgb, λ ) =
λ = 860nm
4.0
(20)
C0,ocu (g, Sgb, 8) and C0,ocu (g, Sgb, 8) are open circuits
and short-circuit diffusion capacitance of the solar cell,
respectively.
8
λ=8
60 nm
80 nm
λ=8
0 0 nm
λ=9
20 nm
λ=9
40 nm
λ=9
14
10
3
2
38
44
50
Grain size g (μ m)
66
Fig. 4: Efficiency (%) of diffusion capacitance of the solar cell
versus grain size g (:m): Sgb = 103 cm/s, H = 130 :m
and D = 26 cm2/s
Effciency(%) of solar cell’s diffusion capacitance
RESULTS AND DISCUSSION
Using MathCAD software (from Mathsoft), the
dependence of the diffusion capacitance efficiency with
varying grain size and grain boundary recombination
velocity are studied and displayed in Fig. 3 and 4 for
different values of wavelength and in Fig. 5 and 6 for
front side and both front and rear sides illumination.
In Mbodji et al. (2010a, b) researches, authors noted
major losses of photogenerated electrons among the grain
boundary and here, it is observed in Fig. 3 and 6 that as
the grain boundary recombination velocities decrease
from a maximum values of Sgb = 1000 cm/s, the diffusion
capacitance efficiency is increased monotonically.
Figure 4 also shows the nature of variation of
efficiency of the diffusion capacitance. It shows that
efficiency of the diffusion capacitance decreases when the
grain size is reduced from 56 mm. The increase of grain
size corresponds to a decrease of the recombination
centers (Mbodji et al., 2010a, b) and helps increase the
short-circuit photocurrent, the open circuit photovoltage
and the efficiency of the solar cell because the intrinsic
junction recombination and the back surface
recombination velocities decrease.
30
Both front and rear sides illumination
20
Front side illumination
10
0
32
38
44
50
Grain size g (μ m)
56
Fig. 5: Efficiency (%) of diffusion capacitance of the solar cell
versus grain size g (:m); Sgb = 103 cm/s, H = 130 :m
and D = 26 cm2/s
For all wavelength values ranging from 860 to 940 nm,
the efficiency of diffusion capacitance Cu continues to
decrease as shown in Fig. 3 and 4. This result is predicted
by Mbodji et a. (2010a) for 8>600 nm where authors
reported that energy of incoming photons and excess
minority carrier density near the junction decrease.
286
Grain boundaries recombination velocity Sgb (cm/s)
Res. J. Appl. Sci. Eng. Technol., 4(4): 282-288, 2012
capacitance efficiency. The following interesting
conclusion may be drawn from the present analysis:
30
Both front and rear sides illumination
C
C
20
Front side illumination
C
10
0
10
316.2
1000
100
31.6
Grain boundaries recombination velocity Sgb (cm/s )
Diffusion capacitance and solar cell’s efficiencies
have the same evolution and magnitude values;
Diffusion capacitance’s efficiency of the solar cell
increases and decreases with grain size and grain
boundary recombination velocity, respectively;
Among the wavelength ranging from 860 to 940 nm,
the diffusion capacitance’s efficiency decreases
because it obeys to the diminution of incoming
photons’ energy and to the excess minority carrier
density near the junction.
ACKNOWLEDGMENT
Fig. 6: Efficiency (%) of diffusion capacitance of the solar
cell versus grain boundaries recombination
velocity Sgb (cm/s): g = 20 :m, H = 130 :m and
D = 26 cm2/s.
The authors would like to thank Mr. Mawa BA a
Ph.D. student at Cheikh Anta DIOP University for these
re-readings and the team of “Renewable Energy
International Research Group”.
Figure 5 and 6 which are plots of diffusion
capacitance’s efficiency versus grain size and grain
boundaries recombination velocity for front side and both
front and rear sides show that the simultaneous
illumination mode which is made possible by the albedo
gives the maximum efficiency of diffusion capacitance’s
efficiency. This interesting influence of the albedo can be
explained as follows: with the homopolar pp+ at his rear
side, the bifacial solar cell collected the light reflected
from the ground at the back surface and then illuminated
both front and rear sides.
It is apparent that, as shown in Fig. 5, for reduced
grain size (g<44 mm), the front and both front and rear
sides have the same effect on the diffusion capacitance’s
efficiency and these two illumination modes have
different effect as soon as the grain boundary
recombination velocity varies as reported by Fig. 5.
The evolution of diffusion capacitance’s efficiency
studied only with the expression of the extension region
in open circuit and short-circuit points is the same as the
efficiency of the solar cell which generally and usually
expressed with the open circuit phototension Voc, the
short-circuit photocurrent Jsc, the fill factor FF and the
reverse saturation current densities J0 in the base and the
emitter (Datta et al., 1994).
Our method also confirms the results of solar cell’s
efficiency calculated numerically by the PC1 model
(Kranzl et al., 2006) which is used for example by Del
Canizo et al. (2001) for studying the p+nn+ structure on
high resistivity.
REFERENCES
Anil Kumar, R., M.S. Suresh and J. Nagaraju, 2001.
Facility to measure solar cell ac parameters using an
impedance spectroscopy technique. IEEE Trans.
Elect. Dev., 72(8): 3422-3426.
Anil Kumar, R., M.S. Suresh and J. Nagaraju, 2003.
GaAs/Ge Solar cell AC parameters at different
temperatures. Solar Energ. Mater. Solar Cells, 2:
145-153.
Barro, F. I., S. Mbodji, M. Ndiaye, E. Ba and G. Sissoko,
2008a. Influence of grains size and grains boundaries
recombination on the space-charge layer thickness z
of emitter-base junction’s n+-p-p+ solar cell.
Proceeding of 23rd European Photovoltaic Solar
Energy Conference and Exhibition, pp: 604-607.
Barro, F.I., S. Mbodji, M. Ndiaye, A.S. Maiga and
G. Sissoko, 2008b. Bulk and surface recombination
parameters measurement of silicon solar cell under
constant white bias light. J. Sci., 8(4): 37-41.
Chenvidhya, D., K. Kirtikara and C. Jivacate, 2003. A
new characterization method for solar cell dynamic
impedance. Solar Energ. Mater. Solar Cells, 80(4):
459-464.
Colomb, C.M., S.A. Stockman, S. Varadarajan and
G.E. Stillman, 1992. Minority carrier transport in
carbon doped gallium arsenid. Appl. Phys. Let.,
60(1): 65-67.
Datta, S.K., K. Mukhopadhyay, P.K. Pal and H. Saha,
1994. Analysis of thin silicon solar cells for high
efficiency. Solar Energ. Mater. Solar Cells, 33(4):
483-497.
Del Canizo, C., A. Moehlecke, I. Zanesco, I. Tobias and
A. Luque, 2001. Bifacial solar cells on multicrystalline silicon with boron bsf and open rear
contact. Elec. Dev. IEEE Trans., 48(10): 2337-2341.
CONCLUSION
A 3D simulated modelling of diffusion capacitance’s
efficiency was analyzed for front side and for both
illuminated front and rear sides to examine the
polycrystalline bifacial silicon solar cell’s diffusion
287
Res. J. Appl. Sci. Eng. Technol., 4(4): 282-288, 2012
Liou, J.J. and F.A. Lindholm, 1988. Thickness of p/n
junction space-charge layers. J. Appl. Phys., 64(3):
1249-1253.
Mbodji, S., M. Dieng, B. Mbow, F.I. Barro and
G. Sissoko, 2010a. Three dimensional simulated
modelling of diffusion capacitance of polycrystalline
bifacial silicon solar cell. J. Appl. Sci. Technol., 12(15): 109-114.
Mbodji, S., B. Mbow, M. Dieng, F.I. Barro and
G. Sissoko, 2010b. A 3D model for thickness and
diffusion capacitance of emitter-base junction in a
bifacial polycrystalline solar cell. Global J. Pure
Appl. Sci., 16(2): 469-478.
Steckl, A.J. and S.P. Sheu, 1980. The A.C. admittance of
the p-n PbS-Si heterojunction. Solid-State Elec.,
23(7): 715-720.
Sharma,
S.K.,
D. Pavithra, G. Sivakumar,
N. Srinivasamurthy and L.B. Agrawal, 1992.
Determination of solar cell diffusion capacitance and
its dependence on temperature and 1 MeV electron
fluence level. Solar Energ. Mater. Solar Cells, 26(3):
169-179.
Sissoko, G., B. Dieng, A. Correa, M. Adj and D. Azilino,
1998a. Silicon Solar Cell space charge width
determination by a study in modelling. Proc. World
Renew. Energ. Cong., 3: 1852-1855
Sissoko, G., A. Correa, E. Nanema, M.N. Diarra,
A.L. Ndiaye and M. Adj, 1998b. Recombination
parameters determination in a double sided backsurface field silicon solar cell. Proc. World Renew.
Energ. Cong., 3: 1856-1859.
Sissoko, G., C. Museruka, A. Correa, I. Gaye and
A.L. Ndiaye, 1996. Light spectral effect on
recombination parameters of silicon solar cell. Proc.
World Renew. Energ. Cong., 3: 1487-1490.
Deme, M.M., S. Mbodji, S. Ndoye, A. Thiam, A. Dieng
and G. Sissoko, 2010. Influence of illumination
incidence angle, grain size and grain boundary
recombination velocity on the facial solar cell
diffusion capacitance. Revue. Des. Energ.
Renouvelables, 13(1): 109-121.
Diallo, H.L., A.S. Maiga, A. Wereme and G. Sissoko,
2008. New approach of both junction and back
surface recombination velocities in a 3D modelling
study of a polycrystalline silicon solar cell. Eur.
Phys. J. Appl. Phys., 42: 193-211.
Dicker, J., J.O. Schumacher, W. Warta and S.W. Glunz,
2002. Analysis of one-sun monocrystalline rearcontacted silicon solar cells with efficiencies of
22.1%. J. Appl. Phys., 91(7): 4335-4343.
Dieng, A., M.L. Sow, S. Mbodji, M.L. Samb, M. Ndiaye,
M. Thiame, F.I. Barro and G. Sissoko, 2009. 3D
study of a polycrystalline silicon solar cell: Influence
of applied magnetic field on the electrical parameters.
Proceeding of 24th European Photovoltaic Solar
Energy Conference and Exhibition, pp: 473-476.
Dugas, J., 1994. 3D Modelling of a reverse cell made
with improved multicrystalline Silicon wafer. Solar
Energy Materials Solar Cells, 32: 71-88.
Goyal, M., 2007. Computer-based Numerical and
Statistical Techniques. Infinity Science Press, LLC.
Green, M.A. and M. Keevers, 1995. Optical properties of
intrinsic silicon at 300 K. Progress Photovoltaics,
3(3): 189-192.
Kranzl, A., R. Kopecek, K. Peter and P. Fath, 2006.
bifacial solar cells on multi-crystalline silicon with
boron BSF and open rear contact photovoltaic energy
conversion. Conf. Rec. IEEE 4th World Conf., 1:
968-971.
Linda, K., 1998. Low temperature junction and back
surface field formation for photovoltaic devices.
Proceedings of 2nd World Conference and Exhibition
on Photovoltaic Solar Energy Conversion, pp:
1744-1747.
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