International Journal of Engineering Trends and Technology (IJETT) - Volume4Issue4- April 2013 Analysis On Closed Loop Center Tap Rectifier Voltage Oscillation Of LLC Resonant Converter Mr.N.Soundiraraj, M.E., Mr.Amal Arockia Raj.S Assistant Professor, Department of EEE PSNA College of Engineering & Technology Dindigul – 624 622, Tamilnadu, India. PG scholar, Department of EEE PSNA College of Engineering & Technology Dindigul – 624 622, Tamilnadu, India. Abstract -The increasing requirements of lighter, smaller and more efficient electronic products demand the power supply designers to develop DC/DC converter with high power density and efficiency. The LLC resonant converter employing a center-tap rectifier can suffer from a high voltage oscillation across rectifier diodes owing to a leakage inductance of a transformer secondary. The amplitude of this voltage oscillation is varied according to design parameters, parasitic components, and operation regions, i.e., below-resonant region and above-resonant region. To reduce the diode voltage stress, this paper analyzes the voltage oscillation mechanism and presents the design consideration. The major aim of this work is to analyze on center –tap rectifier voltage oscillation of LLC resonant converter and reduce the losses using closed loop with PID controller and through simulation Keywords - LLC resonant converter and rectifier voltage oscillation I.INTRODUCTION Increasing the frequency of operation of power converters is desirable, as it allows the size of circuit magnetics and capacitors to be reduced, leading to cheaper and more compact circuits. However, increasing the frequency of operation also increases switching losses and hence reduces system efficiency. One solution to this problem is to replace the "chopper" switch of a standard SMPS topology (Buck, Boost etc.) with a "resonant" switch, which uses the resonances of circuit capacitances and inductances to shape the waveform of either the current or the voltage across the switching element, such that when switching takes place, there is no current through or voltage across it, and hence no power dissipation. A circuit employing this technique is known as a resonant converter. Resonant converter, which were been investigated intensively in the 80's ,can achieve very low switching loss thus enable resonant topologies to operate at high switching frequency. In resonant topologies, Series Resonant Converter (SRC), Parallel Resonant Converter (PRC) and Series Parallel Resonant Converter (SPRC, also called LCC resonant converter) are the three most popular topologies. The analysis and design of these topologies have been ISSN: 2231-5381 studied thoroughly. these three topologies will be investigated for front-end application. A Zero Current Switching (ZCS) circuit shapes the current waveform, while a Zero Voltage Switching (ZVS) circuit shapes the voltage waveform. II. RESONANT SWITCH Prior to the availability of fully controllable power switches, thyristors were the major power devices used in power electronic circuits. Each thyristor requires a commutation circuit, which usually consists of a LC resonant circuit, for forcing the current to zero in the turnoff process. This mechanism is in fact a type of zero-current turn-off process. With the recent advancement in semiconductor technology, the voltage and current handling capability, and the switching speed of fully controllable switches have significantly been improved. In many high power applications, controllable switches such as GTOs and IGBTs have replaced thyristors. However, the use of resonant circuit for achieving zero-current-switching (ZCS) and/or zero-voltageswitching (ZVS) has also emerged as a new technology for power converters. The concept of resonant switch that replaces conventional power switch is introduced in this section. A resonant switch is a sub-circuit comprising a semiconductor switch S and resonant elements, Lr and Cr. The switch S can be implemented by a unidirectional or bidirectional switch, which determines the operation mode of the resonant switch. Two types of resonant switches, including zerocurrent (ZC) resonant switch and zero-voltage (ZV) resonant switches, are shown in Fig. 1 and Fig. 2, respectively. .Zero current switch http://www.ijettjournal.org Page 1072 International Journal of Engineering Trends and Technology (IJETT) - Volume4Issue4- April 2013 A typical Zero Current Switch consists of a switch S, in series with the resonant inductor LRES, and the resonant capacitor CRES connected in parallel. Energy is supplied by a current source. Lr Cr S Lr Lr S (a) Lr Cr (b) Fig 2: Zero-voltage (ZV) resonant switch Cr S S (a) Cr (b) Fig 1: Zero-current (ZC) resonant switch If an output transformer is used, in certain cases its parasitic inductance can be used as the resonant inductance (in both this and the zero voltage topology). However, as its value is generally not known, the resonant frequency will not be fixed, which may cause problems in the circuit design. When the switch S is off, the resonant capcitor is charged up with a more or less constant current, and so the voltage across it rises linearly. When the switch is turned on, the energy stored in the capacitor is transferred to the inductor, causing a sinusoidal current to flow in the switch. During the negative half wave, the current flows through the anti-paralleled diode, and so in this period there is no current through or voltage across the switch; and it can be turned off without losses. A voltage source connected in parallel injects the energy into this system. When the switch is turned on, a linear current flows through the inductor. When the switch turns off, the energy that is stored in the inductor flows into the resonant capacitor. The resulting voltage across the capacitor and the switch is sinusoidal. The negative halfwave of the voltage is blocked by the diode. During this negative half wave, the current and voltage in the switch are zero, and so it can be turned on without losses. III. LLC RESONANT CONVERTER WITH CENTER- TAP RECTIFIER The LLC resonant converter shown in Fig. 3 is one of the most popular topologies for its simple structure, zero- voltage switching (ZVS) of primary switches, zero-current switching (ZCS) of secondary rectifier diodes. A large number of literature deal with a design guideline considering magnetic components, switching frequency FS variation range, efficiency, and size However, till now, the rectifier voltage oscillation problem across center-tap rectifier has rarely been discussed This type of switching is also known as thyristor mode, as it is one of the more suitable ways of using thyristors; these devices will only turn off if the current through them is forced to zero, which occurs naturally in this topology. In general, isolated-type converters employing an inductive output filter suffer from a voltage ringing across a rectifier stage since a leakage inductance of a transformer and a junction ca- pacitance of rectifier diodes are interacted after a Zero voltage switch This voltage oscillation increases a voltage stress on the secondary diodes. A snubber is generally required to suppress this additional voltage stress, however, it could degrade the efficiency. A typical Zero Voltage Switch consists of a switch in series with a diode. The resonant capacitor is connected in parallel, and the resonant inductor is connected in series with this configuration. In the LLC resonant converter, three types of output stages are commonly adopted in the secondary side according to applications, i.e., voltage-doubler rectifier, full-bridge rectifier, center-tap rectifier, as shown in Fig. 4. In case of the full-bridge rectifier and the voltage-doubler rectifier, the diode voltage stress is clamped to the output voltage VO , which makes them suitable for high output voltage applications On the other hand, in case of the center-tap ISSN: 2231-5381 http://www.ijettjournal.org Page 1073 International Journal of Engineering Trends and Technology (IJETT) - Volume4Issue4- April 2013 rectifier, which is normally adopted for low output voltage applications, the diode voltage stress in steady state is approximately twice the output voltage, 2VO voltage stress on the diodes, a rather high voltage oscillation could be occurred at switching transitions. However, since there is no clamping path for the diode junction capacitance: CJ . For the sake of the voltage oscillation analysis in the secondary side, the equivalent circuit reflected to the secondary side is used where VSs = VS /n, VCRs = VCR/n, COSSs = n2COSS, LMs = LM /n2 , LRs = LR/n2 , CRs = n2CR, and ILMs = nILM . Fig 3: Circuit diagram of LLC resonant converter with Center- tap rectifier Since VO can be considered as a voltage source during switching transitions, each side of the center-tap rectifier can be separated with its own VO and repositioned. Fig 4: Rectifiers for LLC resonant converter. (a) Full-bridge rectifier.(b) Voltage-doubler rectifier. (c) Center-tap rectifier. By simply adopting snubbers, the diode voltage stress can be suppressed. but a loss occurs. To reduce the voltage stress on the center-tap rectifier without snubbers. a rectifier voltage oscillation of the LLC resonant converter and provides a design consideration for a small voltage oscillation. Fig 5:. PSIM simulation waveform of LLC resonant converter. IV. ANALYSIS OF RECTIFIER VOLTAGE OSCILLATION The voltage oscillation across rectifier diode is caused by an interaction between a transformer leakage inductance and parasitic capacitances at switching transitions. the LLC resonant converter including parasitic components, i.e., the switch output capacitance: COSS; the trans former primary leakage inductance: LKp; the secondary leakage inductance: LKs1 and LKs2 ; and the ISSN: 2231-5381 BR Region [FR > FS] The key waveforms and equivalent circuits for the BR region are presented in Figs. 6 and 7, respectively. During t1–t2, the resonant operation transfers the power to the output through the rectifier diode D1. At t2 , ID 1 reaches zero and some voltage oscillation is occurred http://www.ijettjournal.org Page 1074 International Journal of Engineering Trends and Technology (IJETT) - Volume4Issue4- April 2013 across D1 and is expressed as in (1). This oscillation is proportional to VCRs(t2 ), i.e., the ripple of VCR, and is small enough not to affect the peak voltage stress of the diode. Although the ripple of VCR could be increased as Q (= _LR/CR/RO ) is increased, the upcoming oscillation is more dominant with respect to the voltage stress on rectifier diodes. During t2–t3 , only ILM flows in the primary and both D1 and D2 are OFF-state. At t3 , Q1 is turned OFF and the equivalent circuit shown in Fig. 7(a) is constructed. During this switching transition, all the parasitic capacitances, i.e., COSS and CJ , take part in the operation. VCRs can be considered as a constant voltage source since CRs has a sufficiently large capacitance compared to COSSs or CJ . Similarly, ILM can be considered as a constant current source. In this mode, ILMs flows through COSSs and CJ , as presented by the dotted line, i.e., both COSSs and CJ are charged simultaneously. Therefore, VQ1 and VD 1 are increased linearly by the current source. ILKs 1 (t4 ) and ILKs2 (t4 )can be determined by the capacitance ratio of COSSs to CJ At t4 , both the antiparallel diode of Q2 and D2 conduct, and the equivalent circuit is changed, The voltage oscillation is excited by the initial currents of leakage inductors presented in (2) and by the ripple of VCRs,ΔVCRs, as well. ISSN: 2231-5381 Fig 6: Experimental waveform of LLC resonant converter with center-tap rectifie http://www.ijettjournal.org Page 1075 International Journal of Engineering Trends and Technology (IJETT) - Volume4Issue4- April 2013 The key waveforms and equivalent circuits for the AR region are presented in Fig. 8 and 10, respectively The most noticeable operation of switching transition in the AR region compared to the BR region is that Q1 is turned OFF while D1 is still conducting, . Fig 7: Key waveform in BR region Fig 9: Key waveform in AR region which lead to different oscillation factors. After Q1 is turned OFF at t4 , ILR discharges COSS and VQ2 is decreased to zero. Fig 8: Equivalent circuit for BR region. AR Region [FR < FS ] Fig 10: Equivalent circuit for AR region. ISSN: 2231-5381 http://www.ijettjournal.org Page 1076 International Journal of Engineering Trends and Technology (IJETT) - Volume4Issue4- April 2013 Then, ILR and ID 1 are decreased. When ID 1 reach zero at t6 , the equivalent circuit is constructed, where ILMs(t6 ) can cancel out the initial value of ILRs. Unlike the BR region, COSS does not take part in the oscillation. VD 1 (t) and VD 2 (t) can be expressed as in (4) and (5), respectively. At t7 , VD 2 (t) reaches zero and the equivalent circuit is changed, The voltage oscillation is excited by ILKs1 (t7 ) and ILKs2 (t7 ) presented in (6) and by ΔVCRs as well. If the reverse-recovery current of the diode IRR is considered, it would cause an additional oscillation term V. DESIGN CONSIDERATION Half bridge LLC resonant converter LLC resonant converters display many advantages over the conventional LC series resonant converter such as narrow frequency variation over wide range of load and input variation and zero voltage switching even under no load conditions. The diode voltage oscillation mechanisms between two resonant regions are different and their voltage oscillation factors can be obtained .Even though these might not be precise values since they are approximated, they can predict the tendency of the rectifier voltage oscillation. It is noted the main oscillation sources in BR region are ILMs and ΔVCRs at the switching transition in the case of AR region, VO , ΔVCRs at the switching transition, and IRR are the main sources. KL , i.e., LKs/(LRs + LKs), should be small. Since ΔVCRs is proportional to a load condition, a larger oscillation may occur as load increases. AR Region In AR region, Vosc AR1 and Vosc AR2 have the same effect with Vosc BR2 ofBRregion, i.e., small values forΔVCRs and K are desirable. As for Vosc BR3, which is caused by the reverserecovery phenomenon, IRR itself or Llkg /CJ should be small. In order to reduce IRR, di/dt of the diode at the switching transition should be reduced. Therefore, if this term affects the voltage oscillation severely, larger LR will be beneficial by alleviating di/dt. Common Solution Among the voltage oscillation factors in Table I, only LKs is the common factor. Therefore, minimizing LKs is the foremost choice to reduce the voltage oscillation across rectifier diodes over a wide operation range. In other words, the transformer should have a small leakage inductance and the required resonant inductance LR should be adjusted by the additional LEXT in the primary for a small diode voltage oscillation. Smaller ΔVCRs is also beneficial over both AR and BR regions, however, it is determined primarily by the resonant tank design. Table1. RECTIFIER VOLTAGE OSCILLATION FACTORS OF LLC RESONANT CONVERTER BR Region The first term ILMs(t3 ), which is mainly determined by LM , directly affects the oscillation, it should be small, i.e., LM should be large. However, a large LM compared with LR would increase the inductor ratio K, i.e., LM /LR, which leads to an increase in a FS variation range according to an input voltage or a load change [1]– [3]. In addition, lowering ILMs(t3 ) gives a negative effect on ZVS, i.e., a longer dead time between switches is required to ensure ZVS. Regarding the second term, which consists of parasitic capacitances, smaller CJ is preferred to a small oscillation. However, it is determined by the diode selection. Instead, COSS can be increased by paralleling additional capacitor to the switches; however, a larger COSS gives detrimental effect on ZVS. In case of the third term, which consists of inductances, LKs should be small. In order to reduce the diode voltage oscillation caused by Vosc BR2, ΔVCRs or the secondary leakage inductance ratio ISSN: 2231-5381 adjusting the voltage oscillation factors on top of minimizing LKs to reduce the voltage oscillation further sometimes requires a change of the resonant tank design. So to analyze the voltage oscillation of LLC resonant converter and reduce the losses using closed loop control with PID controller through simulation. http://www.ijettjournal.org Page 1077 International Journal of Engineering Trends and Technology (IJETT) - Volume4Issue4- April 2013 Table 2. Input parameters for converter VII. RESULT OF ANALYSIS ON CLOSED LOOP CENTER TAP RECTIFIER VOLTAGE OSCILLATION OF LLC RESONANT CONVERTER VI. SIMULATION AND EXPERIMENTS It is done in MATLAB Simulink. Simulink is a software package for modeling, Simulink, and analyzing Dynamic system Fig 12: Simulation Result VIII. CONCLUSION The LLC resonant converter employing a centertap rectifier can suffer from a high voltage oscillation across rectifier diodes owing to a leakage inductance of a transformer secondary. This voltage oscillation increases a voltage stress on the secondary diodes. A snubber is generally required to suppress this additional voltage stress, however, it could degrade the efficiency. To reduce the diode voltage stress, this paper analyzes the voltage oscillation mechanism and presents the design consideration. Which could reduce the stress on secondary diodes. To analyze on center tap rectifier voltage oscillation of LLC resonant converter and reduce the losses using closed loop control with PID controller through simulation.. ACKNOWLEDGMENT Fig 11: Simulink model for Circuit Diagram ISSN: 2231-5381 I would like to acknowledge the sincere support provided by my guide , Mr.N.SOUNDIRARAJ, M.E.,(PhD) Assistant Professor in Electrical and Electronics Department PSNACET DINDIGUL for his http://www.ijettjournal.org Page 1078 International Journal of Engineering Trends and Technology (IJETT) - Volume4Issue4- April 2013 valuable guidance, encouragement, constructive criticism and unreserved co-operation extended at each stage to complete this project successfully. Also, I am extremely grateful to all the faculty members of EEE department, for their constant encouragement and moral support throughout my venture. REFERRENCES [1] B. Yang, F. C. Lee, A. J. Zhang, and G. Huang, “LLC resonant converter for front end DC/DC conversion,” in Proc. IEEE Appl. Power Electron. Conf., 2002, pp. 1108–1112. [2] L. Bing, L. Wenduo, L. Yan, F. C. Lee, and J. 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Park, C.-E. Kim, G.-W. Moon, andM.-J. Youn, “Voltage oscillation reduction technique for phase-shift full-bridge converter,” IEEE Trans. Ind. Electron., vol. 54, no. 5, pp. 2779–2790, Oct. 2007. [9] B.-C. Kim, K.-B. Park, C.-E. Kim, B.-H. Lee, and G.-W. Moon, “LLC resonant converter with adaptive link-voltage variation for a high-power density adapter,” IEEE Trans. Power Electron., vol. 25, no. 9, pp. 2248– 2252, May 2010. [10] L. H. Dixon, “Transformer and inductor design for optimum circuit performance,” in Proc. Unitrode Power Supply Design Seminar, 2002, pp. 4-1–4-2 ISSN: 2231-5381 http://www.ijettjournal.org Page 1079