RICHARD J. H. MORRIS CPhys, MInstP, PhD, BSc (Hons), HNC
PUBLICATIONS
2015
61. J. S. Richardson-Bullock, M. J. Prest, V. A. Shah, D. Gunnarsson, M. Prunnila, A.
Dobbie, M. Myronov, R. J. H. Morris, T. E. Whall, E. H. C. Parker and D. R.
Leadley.
“Comparison of electron-phonon and hole-phonon energy loss rates in silicon”.
Solid State Electronics, 103, 40-43, (2015).
2014
60. Rajani K Vijayaraghavan, Anthony P. McCoy, Lalit Chauhan, Aidan Cowley,
Richard J. H. Morris, Stephen Daniels, Patrick J McNally.
“Achieving substantial hole conductivity with transparent CuBr thin films:
Influence of oxygen plasma exposure on the growth and properties”.
Journal of Physical Chemistry C, 118, 23226-23232, (2014).
DOI: 10.1021,jp5053997D
59. A.H.A. Hassan, R.J.H. Morris, O.A. Mironov, R. Beanland, D. Walker, S.
Huband. A. Dobbie, M. Myronov, D.R. Leadley.
“Large anisotropy in the hole mobility measured along the
and
orientations in a strained Ge quantum well.”
Applied Physics Letters, 104, 132108 (2014).
DOI: 10.1063/1.4870392
58. O.A. Mironov, A.H.A. Hassan, R. J. H. Morris, M. Uhlarz, D. Chrastina, J.P.
Hague, S. Kiatgamolchai, A. Dobbie, M. Myronov, S. Gabani, I.B. Berkutov,
D.R. Leadley.
Thin Solid Films, 557, 329-333, (2014)
“Ultra High Hole Mobilities in a Pure Strained Ge Quantum Well”
DOI: 10.1016/j.tsf.2013.10.118
57. S. Fajardo, D. M. Bastidas, M. P. Ryan, M. Criado, D. S. McPhail, R.J.H. Morris,
J. M. Bastidas.
“Low Energy SIMS Characterisation of Passive Oxide Films on a New
Low-Nickel Stainless Steel In Alkaline Media: Effect of Chloride Ions”
Applied Surface Science, 288, 423-429, (2014).
DOI: 10.1016/j.apsusc.2013.10.050
56. O.A. Mironov, A.H.A. Hassan, M.Uhlarz, S. Kiatgamolchai, A. Dobbie,
R.J.H. Morris, J. E. Halpin, S. D. Rhead, P. Allred, M. Myronov, S. Gabani,
I.B. Berkutov & D.R. Leadley.
Physica Status Solidi (C), 11, 61-64, (2014).
“New RP-CVD grown ultra-high performance selectively B-doped pure-Ge
20 nm QWs on (100)Si as basis material for post-Si CMOS technology”.
DOI : 10.1002/pssc.201300164
2013
55. Li Yang, M.P. Seah, I.S. Gilmore, R.J.H Morris, M.G. Dowsett, L. Boarino, K.
Sparnacci and Michele Laus.
Journal of Physical Chemistry C. 117, 16042-16052, (2013).
“Depth Porofiles and Melting of Nanoparticles in Secondary Ion Mass
Spectrometry (SIMS)”.
DOI: 10.1021/jp4048538
54. A.H.A. Hassan, O.A. Mironov, A. Feher, E. Cizmar, S. Gabani, R.J.H. Morris,
A. Dobbie, V.A. Shah, M. Myronov, I.B. Berkutov, V.V. Andrievskii & D. R.
Leadley.
ULIS 2013: Proceedings of the 14th International Conference on Ultimate
Integration on Silicon. 117-120, (2013).
“Pure Ge Quantum Well with High Hole Mobility”.
DOI: 10.1109/ULIS.2013.6523527
53. J. S. Richardson-Bullock, M.J. Prest, M. Prunnila, D. Gunnarsson, V.A. Shah, A.
Dobbie, M. Myronov, R.J.H. Morris, T. E. Whall, E.H.C. Parker & D. R.
Leadley.
ULIS 2013: Proceedings of the 14th International Conference on Ultimate
Integration on Silicon. 213-215, (2013).
“Hole-Phonon energy loss rate in boron doped silicon”.
DOI: 10.1109/ULIS.2013.6523522
52. A.H.A. Hassan, O.A. Mironov, A. Dobbie, R.J.H. Morris, J.E. Halpin, V.A.
Shah, M. Myronov, D.R. Leadley, A. Feher, E. Cizmar, S. Gabani, V.V.
Andrievskii and I.B. Berkutov.
2013 IEEE International Scientific Conference Electronics and Nanotechnology
(ELNANO) Proceedings, 51-55, (2013).
“Structural and Electrical Characterization of SiGe Heterostructures Containing
a Pure Ge Strained Quantum Well”.
DOI: 10.1109/ELNANO.2013.6552021
51. M.J. Ashwin, R.J.H. Morris, D. Walker, P.A. Thomas, M.G. Dowsett,
T.S. Jones and T.D. Veal.
Journal of Physics D: Applied Physics. 46, 264003 (2013).
“Molecular-beam epitaxy and lattice parameter of GaNxSb1-x: deviation from
Vegard's law for x >0.02.”
DOI: 10.1088/0022-3727/46/26/264003
50. M.G. Dowsett, R.J.H. Morris, A. Adriaens, N.R. Wilson.
Surface and Interface Analysis, 45, 324-328 (2013).
“Ultra low energy O2+ SIMS depth profiling of superficial poly(CuPc) and
Co(II)T(o-NH2)PP monomolecular layers”.
DOI: 10.1002/sia.5039
49. R.J.H. Morris, M.G. Dowsett, R. Beanland, A. Dobbie, M. Myronov & D.R.
Leadley.
Surface and Interface Analysis, 45, 348-351 (2013).
“O2+ probe-sample conditions for ultra low energy SIMS depth profiling of
nanometre scale Si0.4Ge0.6/Ge quantum wells”.
DOI: 10.1002/sia.4963
2012
48. W.M. Linhart, J. Chai, R.J.H. Morris, M.G. Dowsett, C.F. McConville,
S.M. Durbin, and T.D. Veal.
Physical Review Letters, 109, 247605, (2012).
“Giant reduction of InN surface electron accumulation: Compensation of surface
donors by Mg dopants”.
DOI: 10.1103/PhysRevLett.109.247605
47. I.B. Berkutov, V.V. Andrievskii, Yu.F. Komnik, Yu.A. Kolesnichenko,
R.J.H. Morris, D.R. Leadley & O.A. Mironov.
Low Temperature Physics/Fizika Nizkikh Temperatur, 38, N12, 1455-1463,
(2012)
“Magnetotransport studies of SiGe-based p-type heterostructures: problems of
the effective mass determination”.
DOI: 10.1063/1.4770520
46. A. Dobbie, M. Myronov, R.J.H. Morris, A.H.A. Hassan, M.J. Prest, V.A. Shah,
E.H.C. Parker, T.E. Whall, and D.R. Leadley.
Applied Physics Letters, 101, 172108, (2012).
“Ultra-High Hall Mobility Exceeding One Million in a Strained Germanium
Quantum Well”.
DOI: 10.1063/1.4763476
45. V.A. Shah, M. Myronov, C Wongwanitwatana, R.J.H. Morris, M.J. Prest, J. S
Richardson-Bullock, E.H.C. Parker, T.E. Whall, and D.R. Leadley.
2012 International Silicon-Germanium Technology and Device Meeting, ISTDM
2012 Proceedings, (2012).
“Simple fabrication of suspended germanium structures and their electrical
properties from high quality Ge on Si (001) layers”.
44. A. Dobbie, M. Myronov, R.J.H. Morris, M.J. Prest, J. S Richardson-Bullock,
A.H.A. Hassan, V.A. Shah, E.H.C. Parker, T.E. Whall, and D.R. Leadley.
2012 International Silicon-Germanium Technology and Device Meeting, ISTDM
2012 Proceedings, (2012).
“Ultra-High Hall mobility (1×106cm2V-1S-1) in a two dimensional hole gas in a
strained germanium quantum well grown by reduced pressure CVD”
43. Laurence Bouchenoire, Richard J H Morris and Thomas P A Hase.
Applied Physics Letters, 101, 064107, (2012)
“A silicon ⟨111⟩ phase retarder for producing circularly polarized x-rays in the
2.1-3 keV energy range”.
DOI: 10.1063/1.4740080
42. A. Dobbie, Van Huy Nguyen, R.J.H. Morris, Xue-Chao Liu, M. Myronov &
D.R. Leadley.
Journal of the Electrochemical Society, 159, H490-H496, (2012).
“Thermal Stability of Thin Compressively Strained Ge Surface Channels Grown
on Relaxed Si0.2Ge0.8 Reverse-Graded Buffers”.
DOI: 10.1149/2.063205jes
41. R.J.H. Morris, M.G. Dowsett, R. Beanland, A. Dobbie, M. Myronov & D.R.
Leadley.
Analytical Chemistry, 84, 2292-2298, (2012).
“Overcoming low Ge ionization and erosion rate variation for quantitative ultra
low energy secondary ion mass spectrometry depth profiles of Si1-xGex/Ge
quantum well structures”.
DOI: 10.1021/ac202929x
40. Jessica H. Chai, Thomas H. Myers, Young-Wook Song, Roger J. Reeves,
Wojciech M. Linhart, Richard J. H. Morris, Timothy D. Veal, Mark G.
Dowsett, Christopher F. McConville, Steven M. Durbina
Journal of Vacuum Science & Technology B, 30, 02B124, (2012).
“MBE growth and characterization of Mn-doped InN”.
DOI: 10.1116/1.3687903
39. Robert Edgington, Syunsuke Sato, Yuichiro Ishiyama, Richard Morris, Richard
B. Jackman and Hiroshi Kawarada.
Journal of Applied Physics, 111, 033710, (2012).
“Growth and electrical characterisation of δ-doped boron layers on (111)
diamond Surfaces”.
DOI: 10.1063/1.3682760
2011
38. M.J. Prest, J.T. Muhonen, M. Prunnila, D. Gunnarsson, V.A. Shah,
J.S. Richardson-Bullock, A. Dobbie, M. Myronov, R.J.H. Morris, T.E. Whall,
E.H.C. Parker and D.R. Leadley.
Applied Physics Letters, 99, 251908, (2011).
“Strain enhanced electron cooling in a degenerately doped semiconductor”.
DOI: 10.1063/1.3670330
37. Robert M. Cook, Lara-Jane Pegg, Sophie L. Kinnear, Oliver S. Hutter,
Richard J.H. Morris and Ross A. Hatton.
Advanced Energy Materials, 1, 440-447, (2011).
“An Electrode Design Rule for Organic Photovoltaics Elucidated using molecular
Nanolayers”.
DOI: 10.1002/aenm.201100027
36. J.T. Muhonen, M.J. Prest, M. Prunnila, D. Gunnarsson, V.A. Shah, A. Dobbie, M.
Myronov, R.J.H. Morris, T.E. Whall, E.H.C. Parker, and D.R. Leadley.
Applied Physics Letters, 98, 182103, (2011).
“Strain control of electron-phonon energy loss rate in many-valley
semiconductors”
DOI: 10.1063/1.3579524
35. J. Lui, R.J. Chater, R.J.H. Morris and S. J. Skinner.
Solid State Ionics, 189, 39-44, (2011)
“Oxygen surface exchange and diffusion studies of La2Mo2O9 in different
exchange atmospheres”.
DOI: 10.1016/j.ssi.2011.02.018
34. Xue-Chao Lui, M. Myronov, A. Dobbie, R.J.H. Morris and D.R Leadley
Journal of Physics D: Applied Physics, 44, 055102, (2011)
“High-quality Ge/Si0.4Ge0.6 multiple quantum wells for photonic applications:
growth by reduced pressure chemical vapour deposition and structural
characteristics”.
DOI: 10.1088/0022-3727/44/5/055102
33. R.J.H. Morris and M.G. Dowsett.
Surface and Interface Analysis, 43, 543-546, (2011).
“Ion, sputter and useful yields for accurate quantification of Si1-xGex (0<x<1)
using ultra low energy O2+ SIMS”.
DOI: 10.1002/sia.3506
32. R.J.H. Morris, S. Fearn, J.M. Perkins, J. Kilner, M.G. Dowsett, M.D Biegalski
and C.M. Rouleau.
Surface and Interface Analysis, 43, 635-638, (2011).
“The use of low energy SIMS (LE-SIMS) for nanoscale fuel cell material
development”.
DOI: 10.1002/sia.3526
31. M.G. Dowsett, R.J.H. Morris, M. Hand, A.T. Grigg, D. Walker and R. Beanland.
Surface and Interface Analysis, 43, 211-213, (2011).
“The influence of beam energy on apparent layer thickness using ultra low energy
O2+ SIMS on surface Si1-xGex”.
DOI: 10.1002/sia.3433
2010
30. Xue-Chao Lui, R.J.H Morris, M. Myronov, A. Dobbie, and D.R Leadley
Journal of Physics D: Applied Physics, 43, 505303, (2010)
“Silicon-germanium interdiffussion in strained Ge/SiGe multiple quantum well
structures”
DOI: 10.1088/0022-3727/43/50/505303
29. J.M. Perkins, S. Fearn, S.N. Cook, R. Srinivasan, C.M. Rouleau, H.M. Christen,
G.D. West, R.J.H. Morris, H.L. Fraser, S. J. Skinner, J.A. Kilner and D.W.
McComb.
Advanced Functional Materials, 20, 2664-2674, (2010)
“Anomalous oxidation states in oxide multilayers for fuel cell applications”.
DOI: 10.1002/adfm.201000279
28. R.J.H. Morris, M.G. Dowsett, R. Beanland, P.J Parbrook and C.F. McConville.
Rapid Communications in Mass Spectrometry. 24, 2122-2126, (2010).
“Optical conductivity enhancement (OCE) for accurate ultra low energy SIMS
analysis of wide bandgap GaN/InxGaN1-x structures”.
DOI: 10.1002/rcm.4623
27. J. Lui, R.J. Chater, B. Hangenhoff, R.J.H. Morris and S. J. Skinner.
Solid State Ionics, 181, 812-819, (2010).
“Surface Enhancement of Oxygen Exchange and Diffusion in the Ionic Conductor
La2Mo2O9”.
DOI:10.1016/j.ssi.2010.04.009
26. O.A. Mironov, M. Goiran, J. Galibert, D.V. Kozlov, A.V. Ikonnikov, K.E Spirin,
V.I. Gavrilenko, G. Isella, M. Kummer, H. von Känel, O. Drachenko, M. Helm, J.
Wosnitza, R.J.H. Morris and D. R. Lealdey.
Journal of Low Temperature Physics, 159, 216-221. (2010).
“Cyclotron resonance of extremely conductive 2D holes in high Ge content
strained heterostructures”.
DOI: 10.1007/s10909-009-0147-x
2009
25. R.J.H. Morris and M.G. Dowsett.
Journal of Applied Physics, 105, pp 114316. (2009)
“Ion yields and erosion rates for Si1-xGex (0≤ x ≤1) ultra low energy O2+ SIMS in
the energy range 0.25-1 keV”.
DOI: 10.1063/1.3139279
2008
24. J. Parsons, R.J.H. Morris, D.R. Leadley, E.H.C. Parker, D. Fulgoni and L. Nash.
Applied Physics Letters, 93, 072108, (2008).
“Relaxation of Strained Silicon on Si0.5Ge0.5 Virtual substrates”.
DOI: 10.1063/1.2975188
23. C.S. Beer, T. E. Whall, R.J.H. Morris, E.H.C. Parker and D.R. Leadley.
ULIS 2008: Proceedings of the 9th International Conference on Ultimate
Integration on Silicon. 207-210, (2008).
“Anomalous Ge diffusion effects during Ge-condensation”.
DOI: 10.1109/ULIS.2008.4527175
22. J. Parsons, R.J.H. Morris, D.R. Leadley and E.H.C. Parker.
ULIS 2008: Proceedings of the 9th International Conference on Ultimate
Integration on Silicon. 211-214, (2008).
“Relaxation of Strained Silicon on Si0.5Ge0.5 Virtual Substrates”.
DOI: 10.1109/ULIS.2008.4527176
2007
21. R.J.H Morris, M.G Dowsett, S.H Dalal, D.L Baptista, K.B.K Teo and W.I Milne.
Surface and Interface Analysis, 39, 898-901, (2007)
“Spatial determination of gold catalyst residue used in the production of ZnO
nanowires by SIMS depth profiling analysis”.
DOI: 10.1002/sia.2610
20. J. Parsons, E.H.C. Parker, D.R. Leadley, R.J.H. Morris, T.J. Grasby, A.D.
Capewell.
Applied Physics Letters, 91, 189902, (2007).
“Misfit strain relaxation and dislocation formation in supercritical strained silicon
on virtual substrates”.
DOI: 10.1063/1.2798224
19. R.J.H Morris and M.G Dowsett.
Invited paper for the proceedings of 12th ISMAS-WS Symposium, (2007)
“Ultra low energy secondary ion mass spectrometry and some current
applications”.
2006
18. R.J.H Morris, M.G Dowsett, R.J.H Chang.
Applied Surface Science, 252, 7221-7223, (2006).
“Different optical conductivity enhancement (OCE) protocols to eliminate
charging during ultra low energy SIMS profiling of semiconductor and semiinsulating materials”.
DOI: 10.1016/j.apsusc.2006.02.143
17. B Guzmán de la Mata, M.G Dowsett, R.J.H Morris.
Journal of Vacuum Science and Technology A, 24, 953-956, (2006).
“An alternative method of using an electron beam for charge compensation during
uleSIMS experiments”.
DOI: 10.1116/1.2201044
16. S Fearn, D. S McPhail, R.J.H Morris, M.G Dowsett.
Applied Surface Science, 252, 7070-7073, (2006)
“Sodium and Hydrogen Analysis of Room Temperature Glass Corrosion Using
Low Energy Cs SIMS”.
DOI: 10.1016/j.apsusc.2006.02.101
15. N Franco,E Alves, Vallêra, R.J.H Morris, O.A Mironov, E.H.C Parker,
N.P Barradas.
Nuclear Instruments and Methods in Physics Research B, 249, 878-881, (2006).
“RBS and XRD analysis of SiGe/Ge heterostructures for p-HMOS applications”.
DOI: 10.1016/j.nimb.2006.03.155
2005
14. M.G Dowsett, A Adriaens, M Soares, H Wouters, V.N.N Palitsin, R Gibbons,
R.J.H Morris.
Nuclear Instruments and Methods in Physics Research B, 239, 51-64, (2005).
“The use of ultra-low-energy dynamic SIMS in the study of the tarnishing of
silver”.
DOI: 10.1016/j.nimb.2005.06.179
13. N Franco, N.P Barradas, E Alves, Vallêra, R.J.H Morris, O.A Mironov,
E.H.C Parker.
Materials Science and Engineering B 124-125, 123-126, (2005).
DOI:10.1016/j.mseb.2005.08.087
“XRD analysis of strained Ge-SiGe heterostructures on relaxed SiGe graded
buffers grown by hybrid epitaxy on Si(001) substrates”.
2004
12. R.J.H Morris, D.R Leadley, R Hammond, T.J Grasby, T.W Whall, E.H.C Parker.
Journal of Applied Physics, 96, 6470. (2004)
“Influence of re-growth conditions on the hole mobility in strained Ge
heterostructures produced by hybrid-epitaxy”.
DOI: 10.1063/1.1811784
11. R.J.H Morris, T.J Grasby, R Hammond, M Myronov, O.A Mironov, D.R
Leadley, T.W Whall, E.H.C Parker, T.W Currie, C.W Leitz, E.A Fitzgerald.
Semiconductor Science and Technology, 19, L1-L4. (2004)
“High conductance Ge p-channel heterostructures realized by hybrid epitaxial
growth”.
DOI: 10.1088/0268-1242/19/10/L03
10. S Uppal, A.F.W Willoughby, J Bonar, N.E.B Cowern, T Grasby, R.J.H Morris,
M.G Dowsett.
Journal of Applied Physics, 96, 1376–1380. (2004)
“Diffusion of boron in germanium at 800–900°C”.
DOI: 10.1063/1.1766090
9. S Uppal, A.F.W Willoughby, J Bonar, N.E.B Cowern, R.J.H Morris, M G
Dowsett.
Materials Research Society Symposium Proceedings, 809, 237-242. (2004)
“Diffusion of ion-implanted boron and silicon in germanium”.
8. S Uppal, M Bollani, A.F.W Willoughby, J Bonar, R.J.H Morris, M G Dowsett.
Electrochemical Society 7 Proceedings, art no. 4.4, 159-165. (2004)
“Diffusion of ion-implanted boron in high content SiGe alloys”.
2003
7. S Uppal, A.F.W Willoughby, J Bonar, N.E.B Cowern, R.J.H Morris, M. Bollanid.
Materials Research Society Symposium Proceedings, 765, D6.16. (2003)
“Diffusion of boron in Germanium and Si1-xGex (x > 50%) alloys”.
6. M.G Dowsett, R Morris, P-F Chou, S.F Corcoran, H Kheyrandish, G.A Cooke,
J.L Maul, S.B Patel.
Applied Surface Science, 203-204, 500-503, (2003).
“Charge compensation using optical conductivity enhancement and simple
analytical protocols for SIMS of resistive Si1-xGex alloy layers”.
PII: SO169-4332(02)00765-1
2002
5. A Dan, A.F.W Willoughby, J.F Bonar, B.M McGregor, M.G Dowsett,
R.J.H Morris.
International Journal of Modern Physics B, 16, 4195, (2002).
“Antimony diffusion in silicon germanium alloys under point defect injection”.
2001
4. S Uppal, A.F.W Willoughby, J Bonar, A.G.R Evans, N.E.B Cowern, R. Morris,
M.G. Dowsett.
Journal of Applied Physics. 90, 4293-4295, (2001).
“Diffusion of ion implanted boron in germanium”.
DOI: 10.1063/1.1402664
3. S Uppal, A.F.W Willoughby, J Bonar, A.G.R Evans, N.E.B Cowern, R Morris,
M.G Dowsett.
Physica B. 308, 525-528, (2001).
“Ion-implantation and diffusion behaviour of boron in germanium”.
PII: S0921-4526(01)00752-9
1999
2. T.J Grasby, C.P Parry, P.J Phillips, B.M McGregor, R.J.H Morris, G Braithwaite,
T.E Whall, E.H.C Parker, R Hammond , A.P Knights, P.G Coleman.
Applied Physics Letters. 74, 1848-1850, (1999)
“Technique for producing highly planar Si/Si0.64Ge0.36/Si metal oxide
semiconductor field effect transistor channels”.
DOI: S0003-6951(99)03213-1
1. A.D Lambert, B.M McGregor, R.J.H Morris, C.P Parry, D.P Chu, G.A Cooke,
P.J Phillips, T.E Whall, E.H.C Parker.
Semiconductor Science and Technology. 14, ppL1-L4, (1999).
“Contamination issues during atomic hydrogen surfactant mediated Si MBE”.
DOI: 10.1088/0268-1242/14/2/001