CMOS, ±5 V/+5 V,
4 Ω, Single SPDT Switch
ADG619-EP
FEATURES
FUNCTIONAL BLOCK DIAGRAM
14 Ω (maximum) on resistance
1.4 Ω (maximum) on-resistance flatness
2.7 V to 5.5 V single supply
±2.7 V to ±5.5 V dual supply
Rail-to-rail operation
8-lead SOT-23
Typical power consumption (<0.1 μW)
TTL-/CMOS-compatible inputs
Supports defense and aerospace applications
(AQEC standard)
Military temperature range: −55°C to +125°C
Controlled manufacturing baseline
One assembly and test site
One fabrication site
Enhanced product change notification
Qualification data available on request
ADG619-EP
S2
D
S1
NOTES
1. SWITCHES SHOWN FOR
A LOGIC 1 INPUT.
08844-001
IN
Figure 1.
APPLICATIONS
Automatic test equipment
Power routing
Communication systems
Data acquisition systems
Sample-and-hold systems
Avionics
Relay replacement
Battery-powered systems
GENERAL DESCRIPTION
PRODUCT HIGHLIGHTS
The ADG619-EP is a monolithic, CMOS single-pole doublethrow (SPDT) switch.
1.
2.
3.
4.
5.
The ADG619-EP offers a low on resistance of 4 Ω, which is
matched to within 0.7 Ω between channels. These switches also
provide low power dissipation, yet result in high switching
speeds. The ADG619-EP exhibits break-before-make switching
action, thus preventing momentary shorting when switching
channels.
Low on resistance (RON): 4 Ω typical.
Dual ±2.7 V to ±5.5 V or single 2.7 V to 5.5 V supplies.
Low power dissipation.
Fast tON/tOFF.
Tiny, 8-lead SOT-23 package.
The ADG619-EP is available in an 8-lead SOT-23 package.
Additional application and technical information can be found
in the ADG619 data sheet.
Rev. 0
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
www.analog.com
Tel: 781.329.4700
Fax: 781.461.3113
©2010 Analog Devices, Inc. All rights reserved.
ADG619-EP
TABLE OF CONTENTS
Features .............................................................................................. 1
Single Supply ..................................................................................4
Applications ....................................................................................... 1
Absolute Maximum Ratings ............................................................5
Functional Block Diagram .............................................................. 1
ESD Caution...................................................................................5
General Description ......................................................................... 1
Pin Configurations and Function Descriptions ............................6
Product Highlights ........................................................................... 1
Typical Performance Characteristics ..............................................7
Revision History ............................................................................... 2
Test Circuits........................................................................................8
Specifications..................................................................................... 3
Outline Dimensions ....................................................................... 10
Dual Supply ................................................................................... 3
Ordering Guide .......................................................................... 10
REVISION HISTORY
11/10—Revision 0: Initial Version
Rev. 0 | Page 2 of 12
ADG619-EP
SPECIFICATIONS
DUAL SUPPLY
VDD = +5 V ± 10%, VSS = −5 V ± 10%, GND = 0 V. All specifications −55°C to +125°C, unless otherwise noted.
Table 1.
Parameter
ANALOG SWITCH
Analog Signal Range
On Resistance (RON)
RON Match Between Channels (ΔRON)
On-Resistance Flatness (RFLAT (ON))
LEAKAGE CURRENTS
Source Off Leakage, IS (Off )
Channel On Leakage, ID, IS (On)
DIGITAL INPUTS
Input High Voltage, VINH
Input Low Voltage, VINL
Input Current, IINL or IINH
+25°C
4
6.5
0.7
1.1
0.7
1.35
−55°C to +125°C
Unit
Test Conditions/Comments
VSS to VDD
V
Ω typ
Ω max
Ω typ
Ω max
Ω typ
Ω max
VDD = +4.5 V, VSS = −4.5 V
VS = ±4.5 V, IDS = −10 mA; see Figure 9
10
1.45
1.6
tOFF
Break-Before-Make Time Delay, tBBM
±0.25
±0.01
±0.25
±3
±25
2.4
0.8
0.005
2
80
120
45
75
40
105
110
−67
−67
190
25
95
0.001
0.001
1.0
1
VS = ±4.5 V, VD = ∓ 4.5 V; see Figure 10
nA max
nA typ
nA max
VS = VD = ±4.5 V; see Figure 11
V min
V max
µA typ
μA max
pF typ
VIN = VINL or VINH
μA typ
μA max
μA typ
μA max
1.0
ISS
nA typ
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
dB typ
dB typ
MHz typ
pF typ
pF typ
215
10
Charge Injection
Off Isolation
Channel-to-Channel Crosstalk
Bandwidth −3 dB
CS (Off )
CD, CS (On)
POWER REQUIREMENTS
IDD
VS = ±3.3 V, IDS = −10 mA
VDD = +5.5 V, VSS = −5.5 V
±0.01
±0.1
Digital Input Capacitance, CIN
DYNAMIC CHARACTERISTICS 1
tON
VS = ±4.5 V, IDS = −10 mA
Guaranteed by design, not subject to production test.
Rev. 0 | Page 3 of 12
RL = 300 Ω, CL = 35 pF
VS = 3.3 V; see Figure 12
RL = 300 Ω, CL = 35 pF
VS = 3.3 V; see Figure 12
RL = 300 Ω, CL = 35 pF
VS1 = VS2 = 3.3 V; see Figure 13
VS = 0 V, RS = 0 Ω, CL = 1 nF; see Figure 14
RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 15
RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 16
RL = 50 Ω, CL = 5 pF; see Figure 17
f = 1 MHz
f = 1 MHz
VDD = +5.5 V, VSS = −5.5 V
Digital inputs = 0 V or 5.5 V
Digital inputs = 0 V or 5.5 V
ADG619-EP
SINGLE SUPPLY
VDD = 5 V ± 10%, VSS = 0 V, GND = 0 V. All specifications −55°C to +125°C, unless otherwise noted.
Table 2.
Parameter
ANALOG SWITCH
Analog Signal Range
On Resistance (RON)
RON Match Between Channels (ΔRON)
On-Resistance Flatness (RFLAT (ON))
+25°C
7
10
0.8
1.1
0.5
−55°C to +125°C
Unit
Test Conditions/Comments
0 V to VDD
V
Ω typ
Ω max
Ω typ
Ω max
Ω typ
Ω max
VDD = 4.5 V, VSS = 0 V
VS = 0 V to 4.5 V, IDS = −10 mA; see Figure 9
14
1.4
1.4
LEAKAGE CURRENTS
Source Off Leakage, IS (Off )
Channel On Leakage, ID, IS (On)
DIGITAL INPUTS
Input High Voltage, VINH
Input Low Voltage, VINL
Input Current, IINL or IINH
±0.01
±0.25
±0.01
±0.25
nA typ
nA max
nA typ
nA max
±3
±25
2.4
0.8
0.005
±0.1
Digital Input Capacitance, CIN
DYNAMIC CHARACTERISTICS1
tON
tOFF
Break-Before-Make Time Delay, tBBM
2
120
220
50
75
70
ns typ
ns max
ns typ
ns max
ns typ
ns min
pC typ
dB typ
dB typ
MHz typ
pF typ
pF typ
390
135
10
Charge Injection
Off Isolation
Channel-to-Channel Crosstalk
Bandwidth −3 dB
CS (OFF)
CD, CS (ON)
POWER REQUIREMENTS
IDD
6
−67
−67
190
25
95
0.001
μA typ
μA max
1.0
1
V min
V max
µA typ
µA max
pF typ
Guaranteed by design, not subject to production test.
Rev. 0 | Page 4 of 12
VS = 0 V to 4.5 V, IDS = −10mA
VS = 1.5 V to 3.3 V, IDS = −10 mA
VDD = 5.5 V
VS = 1 V/4.5 V, VD = 4.5 V/1 V; see Figure 10
VS = VD = 1 V/4.5 V; see Figure 11
VIN = VINL or VINH
RL = 300 Ω, CL = 35 pF
VS = 3.3 V; see Figure 12
RL = 300 Ω, CL = 35 pF
VS = 3.3 V; see Figure 12
RL = 300 Ω, CL = 35 pF
VS1 = VS2 = 3.3 V; see Figure 13
VS = 0 V, RS = 0 Ω, CL = 1 nF; see Figure 14
RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 15
RL = 50 Ω, CL = 5 pF, f = 1 MHz; see Figure 16
RL = 50 Ω, CL = 5 pF; see Figure 17
f = 1 MHz
f = 1 MHz
VDD = 5.5 V
Digital inputs = 0 V or 5.5 V
ADG619-EP
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 3.
Parameter
VDD to VSS
VDD to GND
VSS to GND
Analog Inputs1
Digital Inputs1
Peak Current, S or D
Continuous Current, S or D
Operating Temperature Range
Storage Temperature Range
Junction Temperature
Thermal impedance
θJA
θJC
Lead Soldering
Reflow, Peak Temperature
Time at Peak Temperature
1
Rating
13 V
−0.3 V to +6.5 V
+0.3 V to −6.5 V
VSS − 0.3 V to VDD + 0.3 V
−0.3 V to VDD + 0.3 V or 30 mA
(whichever occurs first)
100 mA (pulsed at 1 ms,
10% duty cycle maximum)
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Only one absolute maximum rating may be applied at a time.
ESD CAUTION
50 mA
−55°C to +125°C
−65°C to +150°C
150°C
229.6°C/W
91.99°C/W
260(+0/−5)°C
20 sec to 40 sec
Overvoltages at IN, S, or D are clamped by internal diodes. Current should be
limited to the maximum ratings given.
Rev. 0 | Page 5 of 12
ADG619-EP
D 1
S1 2
GND 3
8
S2
ADG619-EP
7
VSS
TOP VIEW
(Not to Scale)
6
IN
5
NC
VDD 4
NC = NO CONNECT
08844-002
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
Figure 2. 8-Lead SOT-23
(RJ-8)
Table 4. Pin Function Descriptions
Pin No.
1
2
3
4
5
6
7
Mnemonic
D
S1
GND
VDD
NC
IN
VSS
8
S2
Description
Drain Terminal. Can be an input or output.
Source Terminal. Can be an input or output.
Ground (0 V) Reference.
Most Positive Power Supply.
No Connect. Not internally connected.
Logic Control Input.
Most Negative Power Supply. This pin is only used in dual-supply applications and should be tied to
ground in single-supply applications.
Source Terminal. Can be an input or output.
Table 5. Truth Table for the ADG619-EP
IN
0
1
Switch S1
On
Off
Switch S2
Off
On
Rev. 0 | Page 6 of 12
ADG619-EP
TYPICAL PERFORMANCE CHARACTERISTICS
12
8
VDD = +5V
VSS = GND = 0V
VDD, VSS = ±2.5V
7
10
+125°C
VDD, VSS = ±3V
ON RESISTANCE (Ω)
ON RESISTANCE (Ω)
6
5
VDD, VSS = ±3.3V
4
VDD, VSS = ±4.5V
3
VDD, VSS = ±5V
+85°C
8
+25°C
6
–40°C
4
–55°C
2
2
1
–4
–3
–2
–1
1
0
VD, VS (V)
2
3
4
5
0
0
Figure 3. On Resistance vs. VD, VS (Dual Supply)
LEAKAGE CURRENT (nA)
VDD = 4.5V
6
4.0
4.5
5.0
VDD = 5V
4
VDD = +5.5V
VSS = –5.5V
GND = 0V
+ +: VS = +4.5V/VD = +4.5V
+ –: VS = +4.5V/VD = –4.5V
– +: VS = –4.5V/VD = +4.5V
– –: VS = –4.5V/VD = –4.5V
–4
–6
–8
ID, IS (ON) – –
ID, IS (OFF) – +
ID, IS (ON) + +
–10
–12
2
0
1
2
3
4
5
VD, VS (V)
08844-004
–14
0
–16
0
Figure 4. On Resistance vs. VD, VS (Single Supply)
10
20
30
40 50 60 70 80
TEMPERATURE (°C)
90
100 110 120
08844-007
ON RESISTANCE (Ω)
VDD = 3.3V
8
3.5
ID, IS (OFF) + –
–2
12
10
2.0
2.5
3.0
VD, VS (V)
0
VDD = 3V
14
1.5
2
TA = 25°C
VSS = 0V
16
1.0
Figure 6. On Resistance vs. VD, VS for Different Temperatures (Single Supply)
18
VDD = 2.7V
0.5
08844-006
–5
08844-003
TA = 25°C
0
Figure 7. Leakage Currents vs. Temperature (Dual Supply)
7
2
ID, IS (OFF) + –
6
0
LEAKAGE CURRENT (nA)
+85°C
4
+25°C
3
–40°C
–55°C
2
0
–5
–4
–3
–2
VDD = 5.5V
VSS = GND = 0V
+ +: VS = 4.5V/VD = 4.5V
+ –: VS = 4.5V/VD = 1V
– +: VS = 1V/VD = 4.5V
– –: VS = 1V/VD = 1V
–4
–6
ID, IS (OFF) – +
ID, IS (ON) – –
–8
–10
ID, IS (ON) + +
–12
–2
–1
0
1
VD, VS (V)
2
3
4
5
–14
0
Figure 5. On Resistance vs. VD, VS for Different Temperatures (Dual Supply)
Rev. 0 | Page 7 of 12
10
20
30
40 50 60 70 80
TEMPERATURE (°C)
90
100 110 120
Figure 8. Leakage Currents vs. Temperature (Single Supply)
08844-008
1
VDD = +5V
VSS = –5V
GND = 0V
08844-005
ON RESISTANCE (Ω)
+125°C
5
ADG619-EP
TEST CIRCUITS
IDS
D
A
VS
VD
Figure 9. On Resistance
S
NC
VDD VSS
0.1µF
S
50%
VIN
D
IN
CL
35pF
GND
50%
90%
90%
VOUT
RL
300Ω
VOUT
tON
tOFF
Figure 12. Switching Times
S1
0.1µF
VIN
VDD VSS
D2
D
S2
IN
VIN
CL2
35pF
RL2
300Ω
VOUT
VOUT
90%
50%
90%
0V
GND
tBBM
tBBM
Figure 13. Break-Before-Make Time Delay, tBBM
RS
VS
VDD
VSS
VDD
VSS
D
S
VIN
VOUT
S2
CL
1nF
IN
ΔVOUT
VOUT
GND
ΔVOUT
S1
QINJ = CL × ΔVOUT
Figure 14. Charge Injection
VSS
VDD
0.1µF
0.1µF
VDD
NETWORK
ANALYZER
VSS
S
50Ω
50Ω
IN
VS
D
VOUT
VIN
RL
50Ω
GND
OFF ISOLATION = 20 log
VOUT
VS
Figure 15. Off Isolation
Rev. 0 | Page 8 of 12
08844-014
VS2
50%
0V
08844-015
VS1
VDD VSS
08844-013
0.1µF
A
Figure 11. On Leakage
VDD VSS
VS
ID (ON)
VD
Figure 10. Off Leakage
0.1µF
D
08844-012
RON = V1/IDS
ID (OFF)
S
A
08844-011
08844-009
VS
IS (OFF)
D
08844-010
V1
S
ADG619-EP
VDD
VSS
0.1µF
NETWORK
ANALYZER
0.1µF
VSS
VDD
VOUT
S1
R
50Ω
S2
50Ω
D
R
50Ω
IN
VS
CHANNEL-TO-CHANNEL CROSSTALK = 20 log
08844-016
GND
VOUT
VS
Figure 16. Channel-to-Channel Crosstalk
VSS
VDD
0.1µF
0.1µF
VDD
NETWORK
ANALYZER
VSS
S
50Ω
IN
VS
D
VOUT
VIN
GND
INSERTION LOSS = 20 log
VOUT WITH SWITCH
VS WITHOUT SWITCH
Figure 17. Bandwidth
Rev. 0 | Page 9 of 12
08844-017
RL
50Ω
ADG619-EP
OUTLINE DIMENSIONS
3.00
2.90
2.80
1.70
1.60
1.50
8
7
6
5
1
2
3
4
3.00
2.80
2.60
PIN 1
INDICATOR
0.65 BSC
1.95
BSC
1.45 MAX
0.95 MIN
0.15 MAX
0.05 MIN
0.38 MAX
0.22 MIN
0.22 MAX
0.08 MIN
SEATING
PLANE
8°
4°
0°
0.60
BSC
COMPLIANT TO JEDEC STANDARDS MO-178-BA
0.60
0.45
0.30
121608-A
1.30
1.15
0.90
Figure 18. 8-Lead Small Outline Transistor Package [SOT-23]
(RJ-8)
Dimensions shown in millimeters
ORDERING GUIDE
Model1
ADG619SRJZ-EP-RL7
1
2
Temperature Range
−55°C to +125°C
Package Description
8-Lead Small Outline Transistor Package [SOT-23]
Z =RoHS Compliant Part.
Branding on SOT-23 packages is limited to three characters due to space constraints
Rev. 0 | Page 10 of 12
Package Option
RJ-8
Branding2
S3V
ADG619-EP
NOTES
Rev. 0 | Page 11 of 12
ADG619-EP
NOTES
©2010 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D08844-0-11/10(0)
Rev. 0 | Page 12 of 12