EMI/EMC-Compliant, ±15 kV ESD­Protected,
RS-232 Line Drivers/Receivers
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
FEATURES
CONNECTION DIAGRAM
5V INPUT
0.1µF
10V
0.1µF
10V
TTL/CMOS
INPUTS1
APPLICATIONS
Laptop computers
Notebook computers
Printers
Peripherals
Modems
TTL/CMOS
OUTPUTS
GENERAL DESCRIPTION
All devices fully conform to the EIA-232-E and CCITT V.28
specifications and operate at data rates up to 230 kbps. Shutdown and enable control pins are provided on some of the
products (see Table 1).
The shutdown function on the ADM211E disables the charge
pump and all transmitters and receivers. On the ADM213E the
+
12
C1+
14
C1–
15
C2+
16
C2–
+5V TO +10V
VOLTAGE
DOUBLER
+10V TO –10V
VOLTAGE
INVERTER
VCC 11
V+ 13
V– 17
0.1µF
+ 6.3V
+
0.1µF
0.1µF
+ 10V
T1IN
7
T1
2
T1OUT
T2IN
6
T2
3
T2OUT
T3IN
20
T3
1
T3OUT
T4IN
21
T4
28
T4OUT
R1OUT
8
R1
9
R1IN
R2OUT
5
R2
4
R2IN
R3OUT
26
R3
27
R3IN
R4OUT
22
R4
23
R4IN
R5OUT
19
R5
18
R5IN
25
SHDN (ADM211E)
SHDN (ADM213E)
EN (ADM211E)
EN (ADM213E)
The ADM2xxE is a family of robust RS-232 and V.28 interface
devices that operate from a single 5 V power supply. These products are suitable for operation in harsh electrical environments
and are compliant with the EU directive on electromagnetic
compatibility (EMC) (89/336/EEC). The level of emissions and
immunity are both in compliance. EM immunity includes ESD
protection in excess of ±15 kV on all I/O lines (IEC 1000-4-2),
fast transient burst protection (IEC 1000­4­4), and radiated
immunity (IEC 1000-4-3). EM emissions include radiated and
conducted emissions as required by Information Technology
Equipment EN 55022, CISPR 22.
+
24
GND
ADM211E/
ADM213E
RS-232
OUTPUTS
RS-232
INPUTS2
10
1 INTERNAL
2 INTERNAL
400kΩ PULL-UP RESISTOR ON EACH TTL/CMOS INPUT.
5kΩ PULL-DOWN RESISTOR ON EACH RS-232 INPUT.
00068-001
Complies with 89/336/EEC EMC directive
ESD protection to IEC 1000-4-2 (801-2)
Contact discharge: ±8 kV
Air-gap discharge: ±15 kV
Human body model: ±15 kV
EFT/burst immunity (IEC 1000-4-4)
Low EMI emissions (EN 55022)
Eliminates need for TransZorb® suppressors
230 kbps data rate guaranteed
Single 5 V power supply
Shutdown mode 1 μW
Plug-in upgrade for MAX2xxE
Space saving TSSOP package available
Figure 1.
charge pump, all transmitters, and three of the five receivers are
disabled. The remaining two receivers remain active, thereby
allowing monitoring of peripheral devices. This feature allows
the device to be shut down until a peripheral device begins
communication. The active receivers can alert the processor,
which can then take the ADM213E out of the shutdown mode.
Operating from a single 5 V supply, four external 0.1 μF
capacitors are required.
The ADM207E and ADM208E are available in 24-lead PDIP, SSOP,
available in 28-lead SSOP, TSSOP, and SOIC_W packages. All
products are backward compatible with earlier ADM2xx products,
facilitating easy upgrading of older designs.
Table 1. Selection Table
Model
Supply Voltage
Drivers
Receivers
ESD Protection
Shutdown
Enable
Packages
ADM206E
ADM207E
ADM208E
ADM211E
ADM213E
5V
5V
5V
5V
5V
4
5
4
4
4
3
3
4
5
5
±15 kV
±15 kV
±15 kV
±15 kV
±15 kV
Yes
No
No
Yes
Yes (SHDN)1
Yes
No
No
Yes
Yes (EN)
RW-24
N-24-1, RW-24, RS-24, RU-24
N-24-1, RW-24, RS-24, RU-24
RW-28, RS-28, RU-28
RW-28, RS-28, RU-28
1
Two receivers active.
Rev. E
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
www.analog.com
Fax: 781.461.3113
©2006 Analog Devices, Inc. All rights reserved.
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
TABLE OF CONTENTS
Features .............................................................................................. 1
Enable and Shutdown ................................................................ 10
Applications....................................................................................... 1
High Baud Rate........................................................................... 11
General Description ......................................................................... 1
ESD/EFT Transient Protection Scheme .................................. 11
Connection Diagram ....................................................................... 1
ESD Testing (IEC 1000­4­2) ..................................................... 11
Revision History ............................................................................... 2
EFT/Burst Testing (IEC 1000­4­4)........................................... 12
Specifications..................................................................................... 3
IEC 1000-4-3 Radiated Immunity ........................................... 13
Absolute Maximum Ratings............................................................ 4
Emissions/Interference .............................................................. 14
ESD Caution.................................................................................. 4
Conducted Emissions ................................................................ 14
Pin Configurations and Function Descriptions ........................... 5
Radiated Emissions .................................................................... 14
Typical Performance Characteristics ............................................. 8
Outline Dimensions ....................................................................... 16
Theory of Operation ...................................................................... 10
Ordering Guide .......................................................................... 19
Circuit Description..................................................................... 10
REVISION HISTORY
9/06—Rev. D to Rev. E
3/01—Rev. B to Rev. C
Updated Format..................................................................Universal
Changes to Figure 1 and Table 1..................................................... 1
Changes to Table 2............................................................................ 3
Changes to Figure 2, Figure 3, and Figure 5.................................. 5
Changes to Figure 7 and Figure 9................................................... 6
Changes to Figure 11........................................................................ 7
Changes to Figure 17........................................................................ 8
Updated Outline Dimensions ....................................................... 16
Changes to Ordering Guide .......................................................... 19
Changes to Features Section ............................................................1
Changes to Specifications Table ......................................................2
Changes to Absolute Maximum Ratings........................................3
Changes to Figure 6 ..........................................................................5
Changes to Typical Performance Characteristics Section ...... 7, 8
Changes to Table V......................................................................... 11
4/05—Rev. C to Rev. D
Changes to Specifications Section.................................................. 2
Changes to Ordering Guide ............................................................ 4
Updated Outline Dimensions ......................................................... 6
Rev. E | Page 2 of 20
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
SPECIFICATIONS
VCC = 5.0 V ± 10%, C1 to C4 = 0.1 μF. All specifications TMIN to TMAX, unless otherwise noted.
Table 2.
Parameter
DC CHARACTERISTICS
Operating Voltage Range
VCC Power Supply Current
SHUTDOWN SUPPLY CURRENT
LOGIC
Input Pull-Up Current
Input Logic Threshold Low, VINL
Input Logic Threshold High, VINH
Input Logic Threshold High, VINH
TTL/CMOS Output Voltage Low, VOL
TTL/CMOS Output Voltage High, VOH
TTL/CMOS Output Leakage Current
RS-232 RECEIVER
Input Voltage Range 1
Input Threshold Low
Input Threshold High
Input Hysteresis
Input Resistance
RS-232 TRANSMITTER
Output Voltage Swing
Output Resistance
Output Short-Circuit Current
TIMING CHARACTERISTICS
Maximum Data Rate
Receiver Propagation Delay, TPHL, TPLH
Receiver Output Enable Time, tER
Receiver Output Disable Time, tDR
Transmitter Propagation Delay, TPHL, TPLH
Transition Region Slew Rate
EM IMMUNITY
ESD Protection (I/O Pins)
Typ
Max
Unit
Test Conditions/Comments
4.5
5.0
3.5
0.2
5.5
13
10
V
mA
μA
No load
10
25
0.8
μA
V
V
V
V
V
μA
TIN = GND
TIN, EN, EN, SHDN, SHDN
TIN
EN, EN, SHDN, SHDN
IOUT = 1.6 mA
IOUT = −40 μA
EN = VCC, EN = GND, 0 V ≤ ROUT ≤ VCC
7
V
V
V
V
kΩ
TA = 0°C to 85°C
All transmitter outputs loaded with 3 kΩ to ground
VCC = 0 V, VOUT = ±2 V
±20
±60
V
Ω
mA
0.4
120
120
1
8
2
kbps
μs
ns
ns
μs
V/μs
RL = 3 kΩ to 7 kΩ, CL = 50 pF to 2500 pF
CL = 150 pF
kV
kV
kV
V/m
Human body model
IEC 1000-4-2 air-gap discharge
IEC 1000-4-2 contact discharge
IEC 1000-4-3
2.0
2.0
0.4
3.5
+0.05
−30
0.8
3
±5.0
300
±6
+30
1.3
2.0
0.65
5
2.4
±9.0
230
RL = 3 kΩ, CL = 2500 pF
RL = 3 kΩ, CL = 50 pF to 2500 pF, measured from
+3 V to −3 V or −3 V to +3 V
Guaranteed by design.
Table 3. ADM211E Truth Table
SHDN
0
0
1
1
±10
±15
±15
±8
10
Radiated Immunity
1
Min
EN
0
1
X1
X = don’t care.
Status
Normal operation
Normal operation
Shutdown
Table 4. ADM213E Truth Table
TOUT 1:4
Enabled
Enabled
Disabled
ROUT 1:5
Enabled
Disabled
Disabled
SHDN
0
0
1
1
Rev. E | Page 3 of 20
EN
0
1
0
1
Status
Shutdown
Shutdown
Normal operation
Normal operation
TOUT 1:4
Disabled
Disabled
Enabled
Enabled
ROUT 1:3
Disabled
Disabled
Disabled
Enabled
ROUT 4:5
Disabled
Enabled
Disabled
Enabled
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Table 5.
Parameter
VCC
V+
V–
Input Voltages
TIN
RIN
Output Voltages
TOUT
ROUT
Short-Circuit Duration
TOUT
Power Dissipation
N-24-1 PDIP
(Derate 13.5 mW/°C above 70°C)
RW-24 SOIC_W
(Derate 12 mW/°C above 70°C)
RS-24 SSOP
(Derate 12 mW/°C above 70°C)
RU-24 TSSOP
(Derate 12 mW/°C above 70°C)
RW-28 SOIC_W
(Derate 12 mW/°C above 70°C)
RS-28 SSOP
(Derate 10 mW/°C above 70°C)
RU-28 TSSOP
(Derate 12 mW/°C above 70°C)
Operating Temperature Range
Storage Temperature Range
Lead Temperature, Soldering (10 sec)
ESD Rating
MIL-STD-883B (I/O Pins)
IEC 1000-4-2 Air-Gap (I/O Pins)
IEC 1000-4-2 Contact (I/O Pins)
Rating
−0.3 V to +6 V
(VCC – 0.3 V) to +14 V
+0.3 V to −14 V
−0.3 V to (V+ + 0.3 V)
±30 V
ESD CAUTION
±15 V
−0.3 V to (VCC + 0.3 V)
Continuous
1000 mW
900 mW
850 mW
900 mW
900 mW
900 mW
900 mW
−40°C to +85°C
−65°C to +150°C
300°C
±15 kV
±15 kV
±8 kV
Rev. E | Page 4 of 20
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
PIN CONFIGURATIONS AND FUNCTION DESCRIPTIONS
T3OUT
1
24 T4OUT
T3OUT
1
24
T4OUT
T1OUT
2
23 R2IN
T1OUT
2
23
R2IN
T2OUT
3
22 R2OUT
T2OUT
3
22
R2OUT
R1IN
4
21 SHDN
R1IN
4
21
T5IN
R1OUT
5
20
R1OUT
5
20
T5OUT
T2IN
6
T2IN
6
T1IN
GND
8
17
R3OUT
16 R3IN
VCC
9
16
R3IN
15 V–
C1+ 10
15
V–
V+ 11
14
C2–
C1– 12
13
C2+
8
17 R3OUT
VCC
9
V+ 11
14 C2–
C1– 12
13 C2+
00068-002
T1IN
GND
C1+ 10
ADM207E
TOP VIEW 19 T4IN
7 (Not to Scale) 18 T3IN
TOP VIEW 19 T4IN
7 (Not to Scale) 18 T3IN
Figure 2. ADM206E Pin Configuration
00068-004
ADM206E
EN
Figure 4. ADM207E Pin Configuration
5V INPUT
5V INPUT
+
0.1µF
16V
TTL/CMOS
INPUTS1
C1+
12
C1–
13
C2+
14
C2–
+5V TO +10V
VOLTAGE
DOUBLER
VCC 9
+10V TO –10V
VOLTAGE
INVERTER
V– 15
V+ 11
0.1µF
+ 6.3V
0.1µF
0.1µF
+ 16V
T1IN
7
T1
2
T1OUT
T2IN
6
T2
3
T2OUT
T3IN
18
T3
1
T3OUT
T4IN
19
T4
24
T4OUT
R1OUT
5
R1
4
R1IN
R2OUT
22
R2
23
R2IN
R3OUT
17
R3
16
R3IN
EN
20
ADM206E
21
SHDN
GND
+
TTL/CMOS
INPUTS1
RS-232
OUTPUTS
RS-232
INPUTS2
TTL/CMOS
OUTPUTS
+
0.1µF
10V
10
C1+
12
C1–
+
0.1µF
10V
13
C2+
14
C2–
400kΩ PULL-UP RESISTOR ON EACH TTL/CMOS INPUT.
5kΩ PULL-DOWN RESISTOR ON EACH RS-232 INPUT.
VCC 9
+10V TO –10V
VOLTAGE
INVERTER
V– 15
V+ 11
0.1µF
+ 6.3V
+
0.1µF
0.1µF
+ 10V
T1IN
7
T1
2
T1OUT
T2IN
6
T2
3
T2OUT
T3IN
18
T3
1
T3OUT
T4IN
19
T4
24
T4OUT
T5IN
21
T5
20
T5OUT
R1OUT
5
R1
4
R1IN
R2OUT
22
R2
23
R2IN
R3OUT
17
R3
16
R3IN
RS-232
OUTPUTS
RS-232
INPUTS2
ADM207E
8
8
1 INTERNAL
2 INTERNAL
+5V TO +10V
VOLTAGE
DOUBLER
GND
00068-003
TTL/CMOS
OUTPUTS
10
1 INTERNAL
2 INTERNAL
400kΩ PULL-UP RESISTOR ON EACH TTL/CMOS INPUT.
5kΩ PULL-DOWN RESISTOR ON EACH RS-232 INPUT.
Figure 5. ADM207E Typical Operating Circuit
Figure 3. ADM206E Typical Operating Circuit
Rev. E | Page 5 of 20
00068-005
+
0.1µF
6.3V
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
T3OUT 1
28 T4OUT
T1OUT 2
27 R3IN
T2OUT 3
26 R3OUT
R2IN 4
25 SHDN
T2OUT
1
24 T3OUT
T1OUT
2
23 R3IN
R2IN
3
22 R3OUT
R2OUT
4
21 T4IN
T2IN 6
T1IN
5
20 T4OUT
T1IN 7
R1OUT
6
ADM208E
R2OUT 5
24 EN
ADM211E
23 R4IN
TOP VIEW 22 R4OUT
R1OUT 8 (Not to Scale) 21 T4IN
TOP VIEW 19 T3IN
7 (Not to Scale) 18 T2IN
GND
8
17 R4OUT
VCC
9
16 R4IN
VCC 11
18 R5IN
15 V–
C1+ 12
17 V–
V+ 11
14 C2–
C1– 12
13 C2+
Figure 6. ADM208E Pin Configuration
R1IN 9
20 T3IN
GND 10
19 R5OUT
V+ 13
16 C2–
C1– 14
15 C2+
00068-008
C1+ 10
00068-006
R1IN
Figure 8. ADM211E Pin Configuration
5V INPUT
5V INPUT
TTL/CMOS
INPUTS1
+
0.1µF
10V
10
C1+
12
C1–
+
0.1µF
10V
13
C2+
14
C2–
+10V TO –10V
VOLTAGE
INVERTER
V+ 11
V– 15
0.1µF
+ 6.3V
5
T1
2
T1OUT
T2IN
18
T2
1
T2OUT
T3IN
19
T3
24
T3OUT
T4IN
21
T4
20
T4OUT
R1
6
7
+
0.1µF
0.1µF
10V
TTL/CMOS
INPUTS1
RS-232
OUTPUTS
R1IN
R2OUT
4
R2
3
R2IN
R3OUT
22
R3
23
R3IN
R4OUT
17
R4
16
R4IN
GND
0.1µF
10V
0.1µF
+ 10V
T1IN
R1OUT
TTL/CMOS
OUTPUTS
+5V TO +10V
VOLTAGE
DOUBLER
VCC 9
TTL/CMOS
OUTPUTS
RS-232
INPUTS2
ADM208E
8
+
+
12
C1+
14
C1–
15
C2+
16
C2–
+5V TO +10V
VOLTAGE
DOUBLER
VCC 11
+10V TO –10V
VOLTAGE
INVERTER
V– 17
V+ 13
0.1µF
+ 6.3V
0.1µF
0.1µF
+ 10V
T1IN
7
T1
2
T1OUT
T2IN
6
T2
3
T2OUT
T3IN
20
T3
1
T3OUT
T4IN
21
T4
28
T4OUT
R1OUT
8
R1
9
R1IN
R2OUT
5
R2
4
R2IN
R3OUT
26
R3
27
R3IN
R4OUT
22
R4
23
R4IN
R5OUT
19
R5
18
R5IN
EN
24
25
SHDN
GND
+
RS-232
OUTPUTS
RS-232
INPUTS2
ADM211E
400kΩ PULL-UP RESISTOR ON EACH TTL/CMOS INPUT.
5kΩ PULL-DOWN RESISTOR ON EACH RS-232 INPUT.
Figure 7. ADM208E Typical Operating Circuit
1 INTERNAL
2 INTERNAL
400kΩ PULL-UP RESISTOR ON EACH TTL/CMOS INPUT.
5kΩ PULL-DOWN RESISTOR ON EACH RS-232 INPUT.
Figure 9. ADM211E Typical Operating Circuit
Rev. E | Page 6 of 20
00068-009
1 INTERNAL
2 INTERNAL
00068-007
10
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
5V INPUT
T3OUT 1
28 T4OUT
T1OUT 2
27 R3IN
26 R3OUT
T2OUT 3
R2IN 4
25
SHDN
0.1µF
16V
24 EN
R2OUT 5
T2IN 6
0.1µF
16V
ADM213E
12 C1+
14 C1–
+
15 C2+
16 C2–
+5V TO +10V
VOLTAGE
DOUBLER
+10V TO –10V
VOLTAGE
INVERTER
VCC 11
V+ 13
V– 17
0.1µF
+ 6.3V
+
0.1µF
0.1µF
+ 16V
23 R4IN1
TOP VIEW 22 R4OUT1
R1OUT 8 (Not to Scale) 21 T4IN
R1IN 9
20 T3IN
GND 10
19 R5OUT1
VCC 11
18 R5IN1
C1+ 12
17 V–
V+ 13
16 C2–
C1– 14
15 C2+
1 ACTIVE IN SHUTDOWN.
TTL/CMOS
INPUTS1
00068-010
T1IN 7
+
Figure 10. ADM213E Pin Configuration
TTL/CMOS
OUTPUTS
T1IN
7
T1
2
T1OUT
T2IN
6
T2
3
T2OUT
T3IN
20
T3
1
T3OUT
T4IN
21
T4
28
T4OUT
R1OUT
8
R1
9
R1IN
R2OUT
5
R2
4
R2IN
R3OUT
26
R3
27
R3IN
R4OUT3
22
R4
23
R4IN3
R5OUT3
19
R5
18
R5IN3
EN
24
25
SHDN
GND
ADM213E
RS-232
OUTPUTS
RS-232
INPUTS2
1 INTERNAL 400kΩ PULL-UP RESISTOR ON EACH TTL/CMOS INPUT.
2 INTERNAL 5kΩ PULL-DOWN RESISTOR ON EACH RS-232 INPUT.
3 ACTIVE IN SHUTDOWN.
00068-011
10
Figure 11. ADM213E Typical Operating Circuit
Table 6. Pin Function Descriptions
Mnemonic
VCC
V+
V–
GND
C1+, C1–
C2+, C2–
TIN
TOUT
RIN
ROUT
EN/EN
SHDN/SHDN
Function
Power Supply Input (5 V ± 10%).
Internally Generated Positive Supply (+9 V nominal).
Internally Generated Negative Supply (−9 V nominal).
Ground Pin. Must be connected to 0 V.
External Capacitor 1 is connected between these pins. A 0.1 μF capacitor is recommended, but larger capacitors (up to
47 μF) can be used.
External Capacitor 2 is connected between these pins. A 0.1 μF capacitor is recommended, but larger capacitors (up to
47 μF) can be used.
Transmitter (Driver) Inputs. These inputs accept TTL/CMOS levels. An internal 400 kΩ pull-up resistor to VCC is connected on
each input.
Transmitter (Driver) Outputs. These are RS-232 signal levels (typically ±9 V).
Receiver Inputs. These inputs accept RS-232 signal levels. An internal 5 kΩ pull-down resistor to GND is connected on
each input.
Receiver Outputs. These are TTL/CMOS output logic levels.
Receiver Enable (active high on ADM213E, active low on ADM211E). This input is used to enable/disable the receiver
outputs. With EN = low for the ADM211E (EN = high for the ADM213E), the receiver outputs are enabled. With EN = high
for the ADM211E (EN = low for the ADM213E), the receiver outputs are placed in a high impedance state. (See Table 3
and Table 4.)
Shutdown Control (active low on ADM213E, active high on ADM211E). When the ADM211E is in shutdown, the charge
pump is disabled, the transmitter outputs are turned off, and all receiver outputs are placed in a high impedance state.
When the ADM213E is in shutdown, the charge pump is disabled, the transmitter outputs are turned off, and Receiver R1 to
Receiver R3 are placed in a high impedance state; Receiver R4 and Receiver R5 on the ADM213E continue to operate
normally during shutdown. (See Table 3 and Table 4.) Power consumption for all parts reduces to 5 μW in shutdown.
Rev. E | Page 7 of 20
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
TYPICAL PERFORMANCE CHARACTERISTICS
80
80
70
70
LIMIT
60
60
50
(dBµV)
40
30
LIMIT
40
30
20
20
00068-012
0
0.33
0.6
1
3
6
LOG FREQUENCY (MHz)
18
10
30
0
00068-015
10
START 30.0MHz
9
9
Tx O/P HI
5
5
3
3
Tx O/P (V)
Tx O/P (V)
Tx O/P HI LOADED
7
7
1
–1
1
–1
–3
–3
–5
Tx O/P LO
00068-013
–5
–7
STOP 200.0MHz
Figure 15. EMC Radiated Emissions
Figure 12. EMC Conducted Emissions
0
500
1000
1500
2000
LOAD CAPACITANCE (pF)
2500
–7
Tx O/P LO LOADED
–9
4.0
3000
Figure 13. Transmitter Output Voltage
High/Low vs. Load Capacitance (230 kbps)
00068-016
(dBµV)
50
4.5
5.0
VCC (V)
5.5
6.0
Figure 16. Transmitter Output Voltage vs. Power Supply Voltage
15
10
1
Tx O/P HI
SHDN
T
V+
2
0
T
3
–5
–10
–15
0
2
4
6
LOAD CURRENT (mA)
8
10
V–
CH1
CH3
5.00V
5.00V
CH2
5.00V
M 50.0µs
CH1
3.1V
V+, V– EXITING SHDN
Figure 17. Charge Pump V+, V− Exiting Shutdown
Figure 14. Transmitter Output Voltage vs. Load Current
Rev. E | Page 8 of 20
00068-017
Tx O/P LO
00068-014
Tx O/P (V)
5
T
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
350
15
300
V+
10
V–
5
V+/V– (V)
200
150
V+
V–
4.7
4.9
5.1
5.3
5.5
VCC (V)
Figure 18. Charge Pump Impedance vs. Power Supply Voltage
Rev. E | Page 9 of 20
–10
–15
00068-019
50
0
4.5
0
–5
100
00068-018
IMPEDANCE (Ω)
250
0
5
10
LOAD CURRENT (mA)
15
Figure 19. Charge Pump V+, V− vs. Load Current
20
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
THEORY OF OPERATION
All RS-232 inputs and outputs contain protection against
electrostatic discharges up to ±15 kV and electrical fast transients up to ±2 kV. This ensures compliance to IEC 1000­4­2
and IEC 1000­4­4 requirements.
The devices are ideally suited for operation in electrically harsh
environments or where RS-232 cables are plugged/unplugged
frequently. They are also immune to high RF field strengths
without special shielding precautions.
C1
S2
GND
+
C3
S4
V+ = 2VCC
+
VCC
INTERNAL
OSCILLATOR
Figure 20. Charge Pump Voltage Doubler
FROM
VOLTAGE
DOUBLER
S1
V+
S2
GND
S3
C2
+
S4
C4
+
INTERNAL
OSCILLATOR
GND
V– = –(V+)
00068-021
Features include low power consumption, high transmission
rates, and compliance with the EU directive on EMC, which
includes protection against radiated and conducted interfereence, including high levels of electrostatic discharge.
S3
S1
VCC
00068-020
The ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
are ruggedized RS-232 line drivers/receivers that operate from a
single 5 V supply. Step-up voltage converters coupled with level
shifting transmitters and receivers allow RS-232 levels to be
developed while operating from a single 5 V supply.
Figure 21. Charge Pump Voltage Inverter
Transmitter (Driver) Section
The drivers convert 5 V logic input levels into EIA-232 output
levels. With VCC = 5 V and driving an EIA-232 load, the output
voltage swing is typically ±9 V.
Emissions are also controlled to within very strict limits.
TTL/CMOS technology is used to keep the power dissipation to
an absolute minimum, allowing maximum battery life in
portable applications. The ADM2xxE is a modification,
enhancement, and improvement to the ADM2xx family and its
derivatives. It is essentially plug-in compatible and does not
have materially different applications.
Unused inputs can be left unconnected, as an internal 400 kΩ
pull-up resistor pulls them high, forcing the outputs into a low
state. The input pull-up resistors typically source 8 μA when
grounded, so unused inputs should either be connected to VCC
or left unconnected in order to minimize power consumption.
CIRCUIT DESCRIPTION
Receiver Section
The internal circuitry consists of four main sections:
The receivers are inverting level shifters that accept EIA-232 input
levels and translate them into 5 V logic output levels. The inputs
have internal 5 kΩ pull-down resistors to ground and are
protected against overvoltages of up to ±25 V. The guaranteed
switching thresholds are 0.4 V minimum and 2.4 V maximum.
Unconnected inputs are pulled to 0 V by the internal 5 kΩ pulldown resistor. This, therefore, results in a Logic 1 output level for
unconnected inputs or for inputs connected to GND.
•
•
•
•
A charge pump voltage converter.
5 V logic to EIA-232 transmitters.
EIA-232 to 5 V logic receivers.
Transient protection circuit on all I/O lines.
Charge Pump DC-to-DC Voltage Converter
The charge pump voltage converter consists of a 200 kHz
oscillator and a switching matrix. The converter generates a
±10 V supply from the input 5 V level. This is done in two
stages using a switched capacitor technique as illustrated in
Figure 20 and Figure 21. First, the 5 V input supply is doubled
to 10 V using Capacitor C1 as the charge storage element. The
10 V level is then inverted to generate −10 V using C2 as the
storage element.
Capacitor C3 and Capacitor C4 are used to reduce the output
ripple. If desired, larger capacitors (up to 47 μF) can be used for
Capacitor C1 to Capacitor C4. This facilitates direct substitution
with older generation charge pump RS-232 transceivers.
The V+ and V– supplies can also be used to power external
circuitry, if the current requirements are small (see the Typical
Performance Characteristics section).
The receivers have Schmitt trigger inputs with a hysteresis level
of 0.65 V. This ensures error-free reception for both noisy
inputs and for inputs with slow transition times.
ENABLE AND SHUTDOWN
Table 3 and Table 4 are truth tables for the enable and shutdown
control signals. The enable function is intended to facilitate data
bus connections where it is desirable to tristate the receiver
outputs. In the disabled mode, all receiver outputs are placed in
a high impedance state. The shutdown function is intended to
shut down the device, thereby minimizing the quiescent
current. In shutdown, all transmitters are disabled and all
receivers on the ADM211E are tristated.
Rev. E | Page 10 of 20
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
On the ADM213E, Receiver R4 and Receiver R5 remain
enabled in shutdown. Note that the transmitters are disabled
but are not tristated in shutdown; it is not permitted to connect
multiple (RS-232) driver outputs together.
The shutdown feature is very useful in battery-operated systems
since it reduces the power consumption to 1 μW. During
shutdown, the charge pump is also disabled. The shutdown
control input is active high on the ADM211E, and it is active
low on the ADM213E. When exiting shutdown, the charge
pump is restarted, and it takes approximately 100 μs for it to
reach its steady state operating condition.
HIGH BAUD RATE
The ADM2xxE feature high slew rates, permitting data
transmission rates well in excess of the EIA-232-E
specifications. RS-232 levels are maintained at data rates up to
230 kbps, even under worst-case loading conditions. This
allows for high speed data links between two terminals, making
it suitable for the new generation modem standards that require
data rates of 200 kbps. The slew rate is controlled internally to
less than 30 V/μs to minimize EMI interference.
protection structure is shown in Figure 24 and Figure 25. Each
input and output contains two back-to-back high speed
clamping diodes. During normal operation, with maximum
RS­232 signal levels, the diodes have no effect because one or
the other is reverse biased, depending on the polarity of the
signal. If, however, the voltage exceeds about ±50 V, reverse
breakdown occurs, and the voltage is clamped at this level. The
diodes are large p-n junctions designed to handle the
instantaneous current surges that can exceed several amperes.
The transmitter outputs and receiver inputs have a similar
protection structure. The receiver inputs can also dissipate some
of the energy through the internal 5 kΩ resistor to GND as well
as through the protection diodes.
The protection structure achieves ESD protection up to
±15 kV and EFT protection up to ±2 kV on all RS-232 I/O
lines. The methods used to test the protection scheme are
discussed in the ESD Testing (IEC 1000­4­2) and EFT/Burst
Testing (IEC 1000­4­4) sections.
RECEIVER
INPUT
3V
R1
RX
D1
EN INPUT
RIN
VOH
00068-024
D2
0V
tDR
Figure 24. Receiver Input Protection Scheme
VOH –0.1V
RECEIVER
OUTPUT
TOUT
RX
VOL
00068-022
NOTES
1. EN IS THE COMPLEMENT OF EN FOR THE ADM213E.
D1
TRANSMITTER
OUTPUT
D2
Figure 22. Receiver Disable Timing
00068-025
VOL +0.1V
Figure 25. Transmitter Output Protection Scheme
3V
EN INPUT
ESD TESTING (IEC 1000-4-2)
0V
tER
+3.5V
RECEIVER
OUTPUT
NOTES
1. EN IS THE COMPLEMENT OF EN FOR THE ADM213E.
00068-023
+0.8V
Figure 23. Receiver Enable Timing
ESD/EFT TRANSIENT PROTECTION SCHEME
The ADM2xxE use protective clamping structures on all inputs
and outputs that clamp the voltage to a safe level and dissipate
the energy present in ESD (electrostatic) and EFT (electrical
fast transient) discharges. A simplified schematic of the
IEC 1000-4-2 (previously IEC 801-2) specifies compliance
testing using two coupling methods, contact discharge and airgap discharge. Contact discharge calls for a direct connection to
the unit being tested. Air-gap discharge uses a higher test voltage
but does not make direct contact with the unit under test. With
air-gap discharge, the discharge gun is moved toward the unit
under test, developing an arc across the air gap. This method is
influenced by humidity, temperature, barometric pressure,
distance, and rate of closure of the discharge gun. The contact
discharge method, while less realistic, is more repeatable and is
gaining acceptance in preference to the air-gap method.
Although very little energy is contained within an ESD pulse,
the extremely fast rise time, coupled with high voltages, can
cause failures in unprotected semiconductors. Catastrophic
Rev. E | Page 11 of 20
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
destruction can occur immediately because of arcing or heating.
Even if catastrophic failure does not occur immediately, the
device can suffer from parametric degradation that can result in
degraded performance. The cumulative effects of continuous
exposure can eventually lead to complete failure.
100
IPEAK (%)
90
I/O lines are particularly vulnerable to ESD damage. Simply
touching or plugging in an I/O cable can result in a static
discharge that can damage or destroy the interface product
connected to the I/O port. Traditional ESD test methods, such
as the MIL-STD-883B method 3015.7, do not fully test product
susceptibility to this type of discharge. This test was intended to
test product susceptibility to ESD damage during handling.
Each pin is tested with respect to all other pins.
There are some important differences between the traditional
test and the IEC test:
•
•
•
The IEC test is much more stringent in terms of discharge
energy. The peak current injected is over four times greater.
The current rise time is significantly faster in the IEC test.
The IEC test is carried out while power is applied to
the device.
It is possible that the ESD discharge could induce latch-up in
the device being tested. This test, therefore, is more representtative of a real-world I/O discharge, where the equipment is
operating normally with power applied. However, both tests
should be performed to ensure maximum protection both
during handling and later during field service.
R1
H. BODY MIL-STD-883B
IEC 1000-4-2
60ns
00068-028
TIME t
30ns
Figure 28. IEC 1000-4-2 ESD Current Waveform
ADM2xxE products are tested using both of the previously
mentioned test methods. Pins are tested with respect to all other
pins as per the MIL-STD-883B specification. In addition, all I/O
pins are tested per the IEC test specification. The products are
tested under the following conditions:
•
•
•
Power on (normal operation).
Power on (shutdown mode).
Power off.
There are four levels of compliance defined by IEC 1000-4-2.
ADM2xxE products meet the most stringent compliance level
both for contact and for air-gap discharge. This means that the
products are able to withstand contact discharges in excess of
8 kV and air-gap discharges in excess of 15 kV.
Level
1
2
3
4
DEVICE
UNDER TEST
C1
ESD TEST METHOD
0.1ns TO 1ns
Table 7. IEC 1000-4-2 Compliance Levels
R2
R2
C1
1.5kΩ
330Ω
100pF
150pF
00068-026
HIGH
VOLTAGE
GENERATOR
10
Contact Discharge (kV)
2
4
6
8
Air-Gap Discharge (kV)
2
4
8
15
Table 8. ADM2xxE ESD Test Results
Figure 26. ESD Test Standards
ESD Test Method
MIL-STD-883B
IEC 1000-4-2
Contact
Air-Gap
100
IPEAK (%)
90
I/O Pin (kV)
±15
±8
±15
EFT/BURST TESTING (IEC 1000-4-4)
10
tRL
tDL
TIME t
Figure 27. Human Body Model ESD Current Waveform
00068-027
36.8
IEC 1000-4-4 (previously IEC 801-4) covers EFT/burst
immunity. Electrical fast transients occur because of arcing
contacts in switches and relays. The tests simulate the
interference generated when, for example, a power relay
disconnects an inductive load. A spark is generated due to the
well-known back EMF effect. In fact, the spark consists of a
Rev. E | Page 12 of 20
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
burst of sparks as the relay contacts separate. The voltage
appearing on the line, therefore, consists of a burst of extremely
fast transient impulses. A similar effect occurs when switching
on fluorescent lights.
The fast transient burst test defined in IEC 1000-4-4 simulates
this arcing; its waveform is illustrated in Figure 29. It consists of
a burst of 2.5 kHz to 5 kHz transients repeating at 300 ms
intervals. It is specified for both power and data lines.
V
•
•
ADM2xxE products meet Classification 2 and have been tested
under worst-case conditions using unshielded cables. Data
transmission during the transient condition is corrupted, but it
can resume immediately following the EFT event without user
intervention.
HIGH
VOLTAGE
SOURCE
t
15ms
RC
CC
RM
L
CD
ZS
5ns
V
50Ω
OUTPUT
00068-030
300ms
Classification 3: Temporary degradation or loss of function
or performance that requires operator intervention or
system reset.
Classification 4: Degradation or loss of function that is not
recoverable due to damage.
Figure 30. IEC 1000-4-4 Fast Transient Generator
IEC 1000-4-3 RADIATED IMMUNITY
t
0.2ms/0.4ms
00068-029
50ns
Figure 29. IEC 1000-4-4 Fast Transient Waveform
Table 9.
Level
1
2
3
4
V Peak (kV)
PSU
0.5
1
2
4
V Peak (kV)
I/O
0.25
0.5
1
2
A simplified circuit diagram of the actual EFT generator is
illustrated in Figure 30.
The transients are coupled onto the signal lines using an EFT
coupling clamp. The clamp is 1 m long and surrounds the cable
completely, providing maximum coupling capacitance (50 pF to
200 pF typical) between the clamp and the cable. High energy
transients are capacitively coupled onto the signal lines. Fast rise
times (5 ns), as specified by the standard, result in very effective
coupling. Because high voltages are coupled onto the signal
lines, this test is very severe. The repetitive transients can often
cause problems where single pulses do not. Destructive latch-up
can be induced due to the high energy content of the transients.
Note that this stress is applied while the interface products are
powered up and are transmitting data. The EFT test applies
hundreds of pulses with higher energy than ESD. Worst-case
transient current on an I/O line can be as high as 40 A.
Test results are classified according to the following:
•
•
Classification 1: Normal performance within specification limits.
Classification 2: Temporary degradation or loss of
performance that is self recoverable.
IEC 1000-4-3 (previously IEC 801-3) describes the measurement method and defines the levels of immunity to radiated
electromagnetic fields. It was originally intended to simulate the
electromagnetic fields generated by portable radio transceivers
or any other devices that generate continuous wave-radiated
EM energy. Its scope has since been broadened to include
spurious EM energy that can be radiated from fluorescent
lights, thyristor drives, inductive loads, and other sources.
Testing for immunity involves irradiating the device with an EM
field. There are various methods of achieving this, including use of
anechoic chamber, stripline cell, TEM cell, and GTEM cell. A
stripline cell consists of two parallel plates with an electric field
developed between them. The device under test is placed within
the cell and exposed to the electric field. There are three severity
levels having field strengths ranging from 1 V/m to 10 V/m.
Results are classified in a similar fashion to those for IEC 1000­4­4.
•
•
•
•
Classification 1: Normal operation.
Classification 2: Temporary degradation or loss of function
that is self recoverable when the interfering signal is
removed.
Classification 3: Temporary degradation or loss of function
that requires operator intervention or system reset when
the interfering signal is removed.
Classification 4: Degradation or loss of function that is not
recoverable due to damage.
The ADM2xxE family of products easily meets Classification 1 at
the most stringent requirement (Level 3). In fact, field strengths
up to 30 V/m showed no performance degradation, and errorfree data transmission continued even during irradiation.
Rev. E | Page 13 of 20
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
Table 10. Test Severity Levels (IEC 1000-4-3)
Level
1
2
3
ø1
Field Strength (V/m)
1
3
10
ø2
EMISSIONS/INTERFERENCE
SWITCHING GLITCHES
00068-032
EN 55022, CISPR 22 defines the permitted limits of radiated
and conducted interference from information technology (IT)
equipment. The objective of the standard is to minimize the
level of emissions, both conducted and radiated.
Figure 32. Switching Glitches
80
For ease of measurement and analysis, conducted emissions are
assumed to predominate below 30 MHz, and radiated emissions
are assumed to predominate above 30 MHz.
70
The ADM2xxE have been designed to minimize the switching
transients and ensure break-before-make switching, thereby
minimizing conducted emissions. This results in emission
levels well below specified limits. Other than the recommended 0.1 μF capacitor, no additional filtering/decoupling
is required.
Conducted emissions are measured by monitoring the line
power supply. The equipment used consists of a line impedance
stabilizing network (LISN) that essentially presents a fixed
impedance at RF and a spectrum analyzer. The spectrum
analyzer scans for emissions up to 30 MHz. A plot for the
ADM211E is shown in Figure 33.
S2
GND
S3
C1
+
S4
C3
+
INTERNAL
OSCILLATOR
V+ = 2VCC
VCC
00068-031
S1
(dBµV)
50
40
30
20
10
0
00068-033
This is a measure of noise that is conducted onto the line power
supply. Switching transients from the charge pump that are 20 V
in magnitude and that contain significant energy can lead to
conducted emissions. Another source of conducted emissions is
the overlap in switch-on times in the charge pump voltage
converter. In the voltage doubler shown in Figure 31, if S2 has
not fully turned off before S4 turns on, a transient current glitch
occurs between VCC and GND that results in conducted emissions. Therefore, it is important that the switches in the charge
pump guarantee break-before-make switching under all conditions so instantaneous short-circuit conditions do not occur.
VCC
LIMIT
60
CONDUCTED EMISSIONS
0.33
0.6
1
3
6
LOG FREQUENCY (MHz)
18
30
Figure 33. Conducted Emissions Plot
RADIATED EMISSIONS
Radiated emissions are measured at frequencies in excess of
30 MHz. RS-232 outputs designed for operation at high baud
rates while driving cables can radiate high frequency EM
energy. The previously described causes of conducted emissions
can also cause radiated emissions. Fast RS-232 output transitions can radiate interference, especially when lightly loaded
and driving unshielded cables. Charge pump devices are also
prone to radiating noise due to the high frequency oscillator
and the high voltages being switched by the charge pump. The
move toward smaller capacitors in order to conserve board
space has resulted in higher frequency oscillators being employed in the charge pump design, resulting in higher levels of
conducted and radiated emissions.
The RS-232 outputs on the ADM2xxE products feature a controlled slew rate in order to minimize the level of radiated
emissions, yet they are fast enough to support data rates of up to
230 kbps.
Figure 31. Charge Pump Voltage Doubler
Rev. E | Page 14 of 20
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
80
RADIATED NOISE
70
DUT
60
TO
RECEIVER
50
(dBµV)
ADJUSTABLE
ANTENNA
00068-034
TURNTABLE
LIMIT
40
30
Figure 34. Radiated Emissions Test Setup
Testing for radiated emissions was carried out in a shielded
anechoic chamber.
Rev. E | Page 15 of 20
20
10
0
00068-035
Figure 35 shows a plot of radiated emissions vs. frequency. The
levels of emissions are well within specifications, without the
need for any additional shielding or filtering components. The
ADM2xxE were operated at maximum baud rates and
configured like a typical RS-232 interface.
START 30.0MHz
STOP 200.0MHz
Figure 35. Radiated Emissions
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
OUTLINE DIMENSIONS
1.280 (32.51)
1.250 (31.75)
1.230 (31.24)
24
13
1
12
0.280 (7.11)
0.250 (6.35)
0.240 (6.10)
0.325 (8.26)
0.310 (7.87)
0.300 (7.62)
PIN 1
0.100 (2.54)
BSC
0.060 (1.52)
MAX
0.210
(5.33)
MAX
0.015
(0.38)
MIN
0.150 (3.81)
0.130 (3.30)
0.115 (2.92)
0.022 (0.56)
0.018 (0.46)
0.014 (0.36)
0.195 (4.95)
0.130 (3.30)
0.115 (2.92)
0.015 (0.38)
GAUGE
PLANE
SEATING
PLANE
0.430 (10.92)
MAX
0.005 (0.13)
MIN
0.014 (0.36)
0.010 (0.25)
0.008 (0.20)
0.070 (1.78)
0.060 (1.52)
0.045 (1.14)
COMPLIANT TO JEDEC STANDARDS MS-001-AF
CONTROLLING DIMENSIONS ARE IN INCHES; MILLIMETER DIMENSIONS
(IN PARENTHESES) ARE ROUNDED-OFF INCH EQUIVALENTS FOR
REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN.
CORNER LEADS MAY BE CONFIGURED AS WHOLE OR HALF LEADS.
Figure 36. 24-Lead Plastic Dual In-Line Package [PDIP]
(N-24-1)
Dimensions shown in inches and (millimeters)
15.60 (0.6142)
15.20 (0.5984)
13
24
7.60 (0.2992)
7.40 (0.2913)
12
2.65 (0.1043)
2.35 (0.0925)
0.30 (0.0118)
0.10 (0.0039)
COPLANARITY
0.10
10.65 (0.4193)
10.00 (0.3937)
1.27 (0.0500)
BSC
0.51 (0.0201)
0.31 (0.0122)
SEATING
PLANE
0.75 (0.0295)
0.25 (0.0098)
8°
0°
0.33 (0.0130)
0.20 (0.0079)
COMPLIANT TO JEDEC STANDARDS MS-013-AD
CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS
(IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR
REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN.
Figure 37. 24-Lead Standard Small Outline Package [SOIC_W]
Wide Body
(RW-24)
Dimensions shown in millimeters and (inches)
Rev. E | Page 16 of 20
45°
1.27 (0.0500)
0.40 (0.0157)
060706-A
1
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
18.10 (0.7126)
17.70 (0.6969)
15
28
7.60 (0.2992)
7.40 (0.2913)
1
10.65 (0.4193)
10.00 (0.3937)
14
2.65 (0.1043)
2.35 (0.0925)
0.30 (0.0118)
0.10 (0.0039)
COPLANARITY
0.10
1.27 (0.0500)
BSC
SEATING
PLANE
0.51 (0.0201)
0.31 (0.0122)
0.75 (0.0295)
0.25 (0.0098)
45°
8°
0°
1.27 (0.0500)
0.40 (0.0157)
0.33 (0.0130)
0.20 (0.0079)
060706-A
COMPLIANT TO JEDEC STANDARDS MS-013-AE
CONTROLLING DIMENSIONS ARE IN MILLIMETERS; INCH DIMENSIONS
(IN PARENTHESES) ARE ROUNDED-OFF MILLIMETER EQUIVALENTS FOR
REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN.
Figure 38. 28-Lead Standard Small Outline Package [SOIC_W]
Wide Body
(RW-28)
Dimensions shown in millimeters and (inches)
8.50
8.20
7.90
13
24
5.60
5.30
5.00
1
8.20
7.80
7.40
12
0.65 BSC
0.38
0.22
SEATING
PLANE
8°
4°
0°
COMPLIANT TO JEDEC STANDARDS MO-150-AG
Figure 39. 24-Lead Shrink Small Outline Package [SSOP]
(RS-24)
Dimensions shown in millimeters
Rev. E | Page 17 of 20
0.95
0.75
0.55
060106-A
0.05 MIN
COPLANARITY
0.10
0.25
0.09
1.85
1.75
1.65
2.00 MAX
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
10.50
10.20
9.90
15
28
5.60
5.30
5.00
1
8.20
7.80
7.40
14
0.25
0.09
1.85
1.75
1.65
0.38
0.22
0.05 MIN
COPLANARITY
0.10
0.65 BSC
SEATING
PLANE
8°
4°
0°
0.95
0.75
0.55
060106-A
2.00 MAX
COMPLIANT TO JEDEC STANDARDS MO-150-AH
Figure 40. 28-Lead Shrink Small Outline Package [SSOP]
(RS-28)
Dimensions shown in millimeters
7.90
7.80
7.70
24
13
4.50
4.40
4.30
1
6.40 BSC
12
PIN 1
0.65
BSC
0.15
0.05
0.30
0.19
1.20
MAX
SEATING
PLANE
0.10 COPLANARITY
0.20
0.09
0.75
0.60
0.45
8°
0°
COMPLIANT TO JEDEC STANDARDS MO-153-AD
Figure 41. 24-Lead Thin Shrink Small Outline Package [TSSOP]
(RU-24)
Dimensions shown in millimeters
9.80
9.70
9.60
28
15
4.50
4.40
4.30
1
6.40 BSC
14
PIN 1
0.65
BSC
0.15
0.05
COPLANARITY
0.10
0.30
0.19
1.20 MAX
SEATING
PLANE
0.20
0.09
8°
0°
0.75
0.60
0.45
COMPLIANT TO JEDEC STANDARDS MO-153-AE
Figure 42. 28-Lead Thin Shrink Small Outline Package [TSSOP]
(RU-28)
Dimensions shown in millimeters
Rev. E | Page 18 of 20
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
ORDERING GUIDE
Model
ADM206EAR
ADM206EAR-REEL
ADM206EARZ 1
ADM206EARZ-REEL1
ADM207EAN
ADM207EANZ1
ADM207EAR
ADM207EAR-REEL
ADM207EARZ1
ADM207EARZ-REEL1
ADM207EARS
ADM207EARS-REEL
ADM207EARU
ADM207EARU-REEL
ADM207EARU-REEL7
ADM207EARUZ1
ADM207EARUZ-REEL71
ADM208EAN
ADM208EANZ1
ADM208EAR
ADM208EAR-REEL
ADM208EARZ1
ADM208EARZ-REEL1
ADM208EARS
ADM208EARS-REEL
ADM208EARSZ1
ADM208EARSZ-REEL1
ADM208EARU
ADM208EARU-REEL
ADM208EARU-REEL7
ADM208EARUZ1
ADM208EARUZ-REEL1
ADM211EAR
ADM211EAR-REEL
ADM211EARZ1
ADM211EARZ-REEL1
ADM211EARS
ADM211EARS-REEL
ADM211EARSZ1
ADM211EARSZ-REEL1
ADM211EARU
ADM211EARU-REEL
ADM211EARU-REEL7
ADM211EARUZ1
ADM211EARUZ-REEL1
ADM211EARUZ-REEL71
Temperature Range
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
Package Description
24-Lead SOIC_W
24-Lead SOIC_W
24-Lead SOIC_W
24-Lead SOIC_W
24-Lead PDIP
24-Lead PDIP
24-Lead SOIC_W
24-Lead SOIC_W
24-Lead SOIC_W
24-Lead SOIC_W
24-Lead SSOP
24-Lead SSOP
24-Lead TSSOP
24-Lead TSSOP
24-Lead TSSOP
24-Lead TSSOP
24-Lead TSSOP
24-Lead PDIP
24-Lead PDIP
24-Lead SOIC_W
24-Lead SOIC_W
24-Lead SOIC_W
24-Lead SOIC_W
24-Lead SSOP
24-Lead SSOP
24-Lead SSOP
24-Lead SSOP
24-Lead TSSOP
24-Lead TSSOP
24-Lead TSSOP
24-Lead TSSOP
24-Lead TSSOP
28-Lead SOIC_W
28-Lead SOIC_W
28-Lead SOIC_W
28-Lead SOIC_W
28-Lead SSOP
28-Lead SSOP
28-Lead SSOP
28-Lead SSOP
28-Lead TSSOP
28-Lead TSSOP
28-Lead TSSOP
28-Lead TSSOP
28-Lead TSSOP
28-Lead TSSOP
Rev. E | Page 19 of 20
Package Option
RW-24
RW-24
RW-24
RW-24
N-24-1
N-24-1
RW-24
RW-24
RW-24
RW-24
RS-24
RS-24
RU-24
RU-24
RU-24
RU-24
RU-24
N-24-1
N-24-1
RW-24
RW-24
RW-24
RW-24
RS-24
RS-24
RS-24
RS-24
RU-24
RU-24
RU-24
RU-24
RU-24
RW-28
RW-28
RW-28
RW-28
RS-28
RS-28
RS-28
RS-28
RU-28
RU-28
RU-28
RU-28
RU-28
RU-28
ADM206E/ADM207E/ADM208E/ADM211E/ADM213E
Model
ADM213EAR
ADM213EAR-REEL
ADM213EARZ1
ADM213EARZ-REEL1
ADM213EARS
ADM213EARS-REEL
ADM213EARSZ1
ADM213EARSZ-REEL1
ADM213EARU
ADM213EARU-REEL
ADM213EARU-REEL7
ADM213EARUZ1
ADM213EARUZ-REEL1
ADM213EARUZ-REEL71
1
Temperature Range
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
−40°C to +85°C
Package Description
28-Lead SOIC_W
28-Lead SOIC_W
28-Lead SOIC_W
28-Lead SOIC_W
28-Lead SSOP
28-Lead SSOP
28-Lead SSOP
28-Lead SSOP
28-Lead TSSOP
28-Lead TSSOP
28-Lead TSSOP
28-Lead TSSOP
28-Lead TSSOP
28-Lead TSSOP
Z = Pb-free part.
©2006 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
C00068-0-9/06(E)
Rev. E | Page 20 of 20
Package Option
RW-28
RW-28
RW-28
RW-28
RS-28
RS-28
RS-28
RS-28
RU-28
RU-28
RU-28
RU-28
RU-28
RU-28