Matched Monolithic
Dual Transistor
MAT01
Data Sheet
PIN CONNECTION DIAGRAM
Low VOS (VBE match): 40 µV typical, 100 µV maximum
Low TCVOS: 0.5 µV/°C maximum
High hFE: 500 minimum
Excellent hFE linearity from 10 nA to 10 mA
Low noise voltage: 0.23 µV p-p from 0.1 Hz to 10 Hz
High breakdown: 45 V min
APPLICATIONS
MAT01
TOP VIEW
(Not to Scale)
C1
1
6
5 B2
B1 2
4 E
2
E1 3
Weigh scales
Low noise, op amp, front end
Current mirror and current sink/source
Low noise instrumentation amplifiers
Voltage controlled attenuators
Log amplifiers
C2
NOTES
1. SUBSTRATE IS CONNECTED TO CASE.
00282-001
FEATURES
Figure 1.
GENERAL DESCRIPTION
The MAT01 is a monolithic dual NPN transistor. An exclusive
silicon nitride triple passivation process provides excellent
stability of critical parameters over both temperature and time.
Matching characteristics include offset voltage of 40 µV,
temperature drift of 0.15 µV/°C, and hFE matching of 0.7%.
Rev. D
High hFE is provided over a six decade range of collector
current, including an exceptional hFE of 590 at a collector
current of only 10 nA. The high gain at low collector current
makes the MAT01 ideal for use in low power, low level input
stages.
Document Feedback
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700 ©1973–2014 Analog Devices, Inc. All rights reserved.
Technical Support
www.analog.com
MAT01
Data Sheet
TABLE OF CONTENTS
Features .............................................................................................. 1
ESD Caution...................................................................................5
Applications ....................................................................................... 1
Typical Performance Characteristics ..............................................6
Pin Connection Diagram ................................................................ 1
Test Circuits........................................................................................8
General Description ......................................................................... 1
Applications Information .................................................................9
Revision History ............................................................................... 2
Typical Applications ....................................................................... 10
Specifications..................................................................................... 3
Outline Dimensions ....................................................................... 11
Electrical Characteristics ............................................................. 3
Ordering Guide .......................................................................... 11
Absolute Maximum Ratings ............................................................ 5
REVISION HISTORY
9/14—Rev. C to Rev. D
2/02—Rev. A to Rev. B
Changes to Figure 4 and Figure 7 ................................................... 6
Edits to Features.................................................................................1
Deleted Wafer Test Limits ................................................................3
Deleted DICE Characteristics ..........................................................3
Edits to Table 5 ...................................................................................7
4/13—Rev. B to Rev. C
Updated Format .................................................................. Universal
Added Applications Section, Deleted Figure 2,
Renumbered Sequentially................................................................ 1
Deleted Table 3, Renumbered Sequentially................................... 4
Changes to Table 3 ............................................................................ 5
Changes to Typical Performance Characteristics Section ........... 6
Updated Outline Dimensions ....................................................... 11
Changes to Ordering Guide .......................................................... 11
Rev. D | Page 2 of 12
Data Sheet
MAT01
SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
VCB = 15 V, IC = 10 µA, TA = 25°C, unless otherwise noted.
Table 1.
Parameter
VOLTAGE
Breakdown Voltage
Offset Voltage
Offset Voltage Stability
First Month1
Long Term2
CURRENT
Offset Current
Bias Current
Current Gain
Current Gain Match
NOISE
Low Frequency Noise Voltage
Broadband Noise Voltage
Noise Voltage Density
OFFSET VOLTAGE/CURRENT
Offset Voltage Change
Offset Current Change
LEAKAGE
Collector to Base Leakage Current
Collector to Emitter Leakage Current
Collector to Collector Leakage Current
SATURATION
Collector Saturation Voltage
GAIN BANDWIDTH PRODUCT
CAPACITANCE
Output Capacitance
Collector to Collector Capacitance
Symbol
Test Conditions/Comments
Min
BVCEO
VOS
IC = 100 µA
45
MAT01AH
Typ Max
0.1
VOS/Time
2.0
0.2
IOS
IB
hFE
0.1
13
590
770
840
0.7
0.8
0.6
20
∆hFE
500
MAT01GH
Typ Min
45
0.04
IC = 10 nA
IC = 10 µA
IC = 10 mA
IC = 10 µA
100 nA ≤ IC ≤ 10 mA
Min
0.10
0.5
2.0
0.2
250
3.0
Unit
V
mV
µV/Mo
µV/Mo
0.2
18
430
560
610
1.0
1.2
3.2
40
nA
nA
8.0
%
%
0.4
9.0
7.6
7.5
µV p-p
µV rms
nV/√Hz
nV/√Hz
nV/√Hz
en p-p
en rms
en
0.1 Hz to 10 Hz3
1 Hz to 10 kHz
fO = 10 Hz3
fO = 100 Hz3
fO = 1000 Hz3
0.23
0.60
7.0
6.1
6.0
0.4
9.0
7.6
7.5
0.23
0.60
7.0
6.1
6.0
∆VOS/∆VCB
∆IOS/∆VCB
0 ≤ VCB ≤ 30 V
0 ≤ VCB ≤ 30 V
0.5
2
3.0
15
0.8
3
8.0
70
µV/V
pA/V
ICBO
ICES
ICC
VCB = 30 V, IE = 04
VCE = 30 V, VBE = 04, 5
VCC = 30 V5
15
50
20
50
200
200
25
90
30
200
400
400
pA
pA
pA
VCE(SAT)
0.12
0.8
450
0.20
0.12
0.8
450
0.25
fT
IB = 0.1 mA, IC = 1 mA
IB = 1 mA, IC = 10 mA
VCE = 10 V, IC = 10 mA
V
V
MHz
COB
CCC
VCB = 15 V, IE = 0
VCC = 0
2.8
8.5
1
2.8
8.5
pF
pF
Exclude first hour of operation to allow for stabilization.
Parameter describes long-term average drift after first month of operation.
3
Sample tested.
4
The collector to base (ICBO) and collector to emitter (ICES) leakage currents can be reduced by a factor of 2 to 10 times by connecting the substrate (package) to a
potential that is lower than either collector voltage.
5
ICC and ICES are guaranteed by measurement of ICBO.
2
Rev. D | Page 3 of 12
MAT01
Data Sheet
VCB = 15 V, IC = 10 µA, −55°C ≤ TA ≤ +125°C, unless otherwise noted.
Table 2.
Parameter
OFFSET VOLTAGE/CURRENT
Offset Voltage
Average Offset Voltage Drift1
Offset Current
Average Offset Current Drift2
BIAS CURRENT
CURRENT GAIN
LEAKAGE CURRENT
Collector to Base Leakage Current
Collector to Emitter Leakage Current
Collector to Collector Leakage Current
(
Symbol
Test Conditions/Comments
VOS
TCVOS
IOS
TCIOS
ΙΒ
hFE
ICBO
ICES
ICC
Min
167
TA = 125°C, VCB = 30 V, IE = 03
TA = 125°C, VCE = 30 V, VBE = 01, 3
TA = 125°C, VCC = 30 V1
)
MAT01AH
Typ Max
0.06
0.15
0.9
10
28
400
0.15
0.50
8.0
90
60
15
50
30
80
300
200
Min
77
MAT01GH
Typ Min
0.14
0.35
1.5
15
36
300
0.70
1.8
15.0
150
130
mV
µV/°C
nA
pA/°C
nA
25
90
50
200
400
400
nA
nA
nA
V
Guaranteed by VOS test TCVOS ≅ OS for VOS <<VBE , T = 298 K for TA = 25°C.
T
2
Guaranteed by IOS test limits over temperature.
3
The collector to base (ICBO) and collector to emitter (ICES) leakage currents can be reduced by a factor of 2 to 10 times by connecting the substrate (package) to a
potential that is lower than either collector voltage.
1
Rev. D | Page 4 of 12
Unit
Data Sheet
MAT01
ABSOLUTE MAXIMUM RATINGS
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those indicated in the operational
section of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
Table 3.
1
Parameter
Breakdown Voltage of
Collector to Base Voltage (BVCBO)
Collector to Emitter Voltage (BVCEO)
Collector to Collector Voltage (BVCC)
Emitter to Emitter Voltage (BVEE)
Emitter to Base Voltage (BVEBO)2
Current
Collector (IC)
Emitter (IE)
Total Power Dissipation
Case Temperature ≤ 40°C3
Ambient Temperature ≤ 70°C4
Temperature Range
Operating
Junction
Storage
Lead Temperature (Soldering, 60 sec)
Rating
45 V
45 V
45 V
45 V
5V
ESD CAUTION
25 mA
25 mA
1.8 W
500 mW
−55°C to +125°C
−55°C to +150°C
−65°C to +150°C
300°C
1
Absolute maximum ratings apply to packaged devices.
Application of reverse bias voltages in excess of rating shown can result in
degradation of hFE and hFE matching characteristics. Do not attempt to
measure BVEBO greater than the 5 V rating.
3
Rating applies to applications using heat sinking to control case
temperature. Derate linearity at 16.4 mW/°C for case temperatures above
40°C.
4
Rating applies to applications not using heat sinking; device in free air only.
Derate linearity at 6.3 mW/°C for ambient temperatures above 70°C.
2
Rev. D | Page 5 of 12
MAT01
Data Sheet
TYPICAL PERFORMANCE CHARACTERISTICS
OFFSET VOLTAGE (µV)
OV < VCB < 30V
150
MAT01G
100
MAT01A
0
–75
00282-002
50
0
–25
50
25
75
100
125
10
8
6
DEVICE B
2
0
DEVICE C
–2
DEVICE D
–4
–6
–8
–10
150
DEVICE A
4
00282-005
ABSOLUTE CHANGE IN OFFSET VOLTAGE (µV)
200
0
1
3
2
5
4
TEMPERATURE (°C)
7
6
9
8
10
11
12
13
TIME (Months)
Figure 2. Offset Voltage vs. Temperature
Figure 5. Offset Voltage vs. Time
1000
1000
MAT01A
MAT01A
800
CURRENT GAIN (hfe)
CURRENT GAIN (hFE)
800
MAT01G
600
400
MAT01G
600
0
1n
10n
100n
1µ
10µ
100µ
1m
10m
100nA < IC < 25mA
OV < VCB < 30V
(EXCLUDES ICBO )
00282-003
TA = 25°C
VCB = 15V
200
–75
100m
–50
–25
Figure 3. Current Gain vs. Collector Current
50
75
100
125
Figure 6. Current Gain vs. Temperature
1000
100
TA = 25°C
100
10
IC = 10µA WORST CASE
IC = 300µA TYPICAL
1
10
100
10k
00282-004
IC = 10µA TYPICAL
10
IC = 10µA
WORST CASE
IC = 10µA TYPICAL
0.1
0.1
10k
IC = 300µA TYPICAL
1
00282-007
NOISE CURRENT DENSITY (pA/√Hz)
TA = 25°C
NOISE VOLTAGE DENSITY (nV/√Hz)
25
TEMPERATURE (°C)
COLLECTOR CURRENT (A)
1
0.1
0
00282-006
400
200
1
10
100
1k
FREQUENCY (Hz)
FREQUENCY (Hz)
Figure 4. Noise Voltage Density vs. Frequency
Figure 7. Noise Current Density vs. Frequency
Rev. D | Page 6 of 12
10k
Data Sheet
MAT01
1000
10µA
1µA
Δ < 0.1mV
100nA
10nA
1nA
Δ < 0.3mV
100pA
10pA
0
100
Δ ≈ DEVIATION FROM
STRAIGHT LINE
200
300
400
500
600
700
00282-008
COLLECTOR CURRENT (IC)
Δ < 0.3mV
100µA
800
BASE TO EMITTER VOLTAGE (mV)
Figure 8. Collector Current vs. Base to Emitter Voltage
10
TA = +125°C
TA = +25°C
TA = –55°C
0.1
00282-009
SATURATION VOLTAGE (V)
MAT01
IC = 10 × IB
0.01
0.01
0.1
1
10
COLLECTOR CURRENT (mA)
TA = 25°C
VCE = 10V
200
100
MAT01
50
20
10
5
2
1
1µA
10µA
100µA
1mA
COLLECTOR CURRENT (IC)
10mA
Figure 10. Unity-Gain Bandwidth vs. Collector Current
100
1
500
00282-010
MAT01
TA = 25°C
1mA
UNITY-GAIN BANDWIDTH PRODUCT (MHz)
10mA
100
Figure 9. Saturation Voltage vs. Collector Current
Rev. D | Page 7 of 12
100mA
MAT01
Data Sheet
TEST CIRCUITS
+16.5V
+16.5V
50kΩ*
20kΩ
50kΩ*
50kΩ*
VOUT
OP1177
100kΩ
1%
S1B
1MΩ
100pF
UNITS
CLOSED CLOSED
IOS
1MΩ*
MAT01
VOS
S1B
S1A
TEST
–15V
S1A
OPEN
OPEN
VOUT1
1V PER mV
VOUT2 – VOUT1 1V PER nA
100kΩ
1%
100pF
00282-011
20µA
V–
*MATCHED TO 0.01%
Figure 11. Matching Measurement Circuit
+15V
50kΩ*
50kΩ*
+15V
50kΩ*
S3
A
S2
S1A
S1B
4MΩ
–15V
3.3kΩ
2.5MΩ
4MΩ
MAT01
B
SPECTRUM
ANALYZER
OR
QUAN-TECH
IC NOISE
ANALYZER
2181/2283
4kΩ
V01
NOISE
DENSITY
V02
LOW
FREQUENCY
NOISE
4.7µF
2pF
2pF
720kΩ
100Ω
20µA
–15V
S1A
S1B
S3**
READING
NOISE VOLTAGE DENSITY CLOSED CLOSED CLOSED
(PER TRANSISTOR)
A
V01/√2
NOISE CURRENT DENSITY
(PER TRANSISTOR)
CLOSED
A
V01/(√2 × 4MΩ)
OPEN
B
V02 PEAK-TO-PEAK
25,000
TEST
LOW FREQUENCY NOISE
(REFERRED TO INPUT)
OPEN
OPEN
CLOSED CLOSED
S2
**A AND B REFER TO THE THROW POSITION OF THE SWITCH
Figure 12. Noise Measurement Circuit
Rev. D | Page 8 of 12
00282-012
*MATCHED TO 0.01%
Data Sheet
MAT01
APPLICATIONS INFORMATION
Application of reverse bias voltages to the emitter to base junctions
in excess of ratings (5 V) may result in degradation of hFE and
hFE matching characteristics. Check circuit designs to ensure
that reverse bias voltages above 5 V cannot be applied during
transient conditions, such as at circuit turn-on and turn-off.
Stray thermoelectric voltages generated by dissimilar metals at
the contacts to the input terminals can prevent realization of the
predicted drift performance. Maintain both input terminals at
the same temperature, preferably close to the temperature of the
device package.
Rev. D | Page 9 of 12
MAT01
Data Sheet
TYPICAL APPLICATIONS
1mA
VREF
Q1
Q2
R1
1.5kΩ
NOTES
1. R1 MAY BE ADJUSTED TO MINIMIZE TCVREF .
INCREASING R1 CAUSES A POSITIVE CHANGE IN TCVREF.
2. hFE OF Q1 IS REDUCED BY OPERATION OF BREAKDOWN MODE.
00282-013
VREF ≈ 7.0V
TCVREF ≈ 100ppm/°C
RO ≈ 40Ω
Figure 13. Precision Reference
UP TO
100 FEET
CABLE
+15V
–15V
DIFFERENTIAL
AMPLIFIER AND
CURRENT SOURCES
°C
K
EO
–55°C = 218K = 2.18V
+25°C = 298K = 2.98V
+125°C = 398K = 3.98V
EO = 10mV/K
3-DIGIT DPM
0V TO +10V
FULL SCALE
00282-014
SENSING PAIR
MAT01H
Figure 14. Basic Digital Thermometer Readout in Degrees Kelvin (K)
SENSING PAIR
MAT01H
+15V
DIFFERENTIAL
AMPLIFIER AND
CURRENT SOURCES
HIGH
2.73V
+
POWER SUPPLY –
METER DISPLAYS
EO –2.73V
–15V
LOW
EO = 10mV/K
2 1/2 DIGIT
DPM BIPOLAR
DIFFERENTIAL
INPUTS
–55°C = –0.55V
+25°C = +0.25V
+125°C = +1.25V
Figure 15. Digital Thermometer with Readout in °C
Rev. D | Page 10 of 12
00282-015
UP TO
100FT.
CABLE
Data Sheet
MAT01
OUTLINE DIMENSIONS
0.185 (4.70)
0.165 (4.19)
REFERENCE PLANE
0.750 (19.05)
0.500 (12.70)
0.250 (6.35) MIN
0.100 (2.54) BSC
0.050 (1.27) MAX
0.160 (4.06)
0.110 (2.79)
5
0.335 (8.51)
0.305 (7.75)
0.370 (9.40)
0.335 (8.51)
4
0.200
(5.08)
BSC
3
6
0.045 (1.14)
0.027 (0.69)
2
0.019 (0.48)
0.016 (0.41)
0.040 (1.02) MAX
0.045 (1.14)
0.010 (0.25)
1
0.100
(2.54)
BSC
0.034 (0.86)
0.027 (0.69)
0.021 (0.53)
0.016 (0.41)
45°
BSC
CONTROLLING DIMENSIONS ARE IN INCHES; MILLIMETER DIMENSIONS
(IN PARENTHESES) ARE ROUNDED-OFF INCH EQUIVALENTS FOR
REFERENCE ONLY AND ARE NOT APPROPRIATE FOR USE IN DESIGN.
022306-A
BASE & SEATING PLANE
Figure 16. 6-Pin Metal Header Package [TO-78]
(H-06)
Dimensions shown in inches and (millimeters)
ORDERING GUIDE
Model1
MAT01AH
MAT01AHZ
MAT01GH
MAT01GHZ
1
VOS Maximum (TA = 25°C)
0.1 mV
0.1 mV
0.5 mV
0.5 mV
Temperature Range
−55°C to +125°C
−55°C to +125°C
−55°C to +125°C
−55°C to +125°C
Package Description
6-Pin Metal Header Package [TO-78]
6-Pin Metal Header Package [TO-78]
6-Pin Metal Header Package [TO-78]
6-Pin Metal Header Package [TO-78]
Z = RoHS Compliant Part.
Rev. D | Page 11 of 12
Package Option
H-06
H-06
H-06
H-06
MAT01
Data Sheet
NOTES
©1973–2014 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D00282-0-9/14(D)
Rev. D | Page 12 of 12