GaAs, pHEMT, MMIC, High Gain
Power Amplifier, 2 GHz to 50 GHz
HMC1127
Data Sheet
FEATURES
FUNCTIONAL BLOCK DIAGRAM
VDD
2
HMC1127
3
RFIN
RFOUT
1
5
VGG1
4
VGG2
13085-001
Output power for 1 dB compression (P1dB): 12.5 dBm typical at
8 GHz to 30 GHz
Saturated output power (PSAT): 17.5 dBm typical at 8 GHz to
30 GHz
Gain: 14.5 dB typical at 30 GHz to 50 GHz
Output third-order intercept (IP3): 23 dBm typical at 8 GHz to
30 GHz
Supply voltage: 5 V at 80 mA
50 Ω matched input/output
Die size: 2.7 mm × 1.45 mm × 0.1 mm
Figure 1.
APPLICATIONS
Test instrumentation
Microwave radios and VSATs
Military and space
Telecommunications infrastructure
Fiber optics
GENERAL DESCRIPTION
The HMC1127 is a gallium arsenide (GaAs), pseudomorphic
high electron mobility transfer (pHEMT), monolithic
microwave integrated circuit (MMIC), distributed power
amplifier that operates between 2 GHz and 50 GHz. The
HMC1127 provides 14.5 dB of gain, 23 dBm output IP3 and
12.5 dBm of output power at 1 dB gain compression while
Rev. A
requiring 80 mA from a 5 V supply. The HMC1127 amplifier
inputs/outputs are internally matched to 50 Ω facilitating
integration into multichip modules (MCMs). All data is taken
with the chip connected via two 0.025 mm (1 mil) wire bonds
of minimal length 0.31 mm (12 mils).
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©2015 Analog Devices, Inc. All rights reserved.
Technical Support
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HMC1127
Data Sheet
TABLE OF CONTENTS
Features .............................................................................................. 1
ESD Caution...................................................................................5
Applications ....................................................................................... 1
Pin Configuration and Function Descriptions..............................6
Functional Block Diagram .............................................................. 1
Interface Schematics .....................................................................7
General Description ......................................................................... 1
Typical Performance Characteristics ..............................................8
Revision History ............................................................................... 2
Applications Information .............................................................. 13
Specifications..................................................................................... 3
2 GHz to 8 GHz Frequency Range ............................................. 3
Mounting and Bonding Techniques for Millimeterwave GaAs
MMICs ......................................................................................... 13
8 GHz to 30 GHz Frequency Range ........................................... 3
Application Circuit ......................................................................... 15
30 GHz to 40 GHz Frequency Range ......................................... 4
Assembly Diagram ..................................................................... 15
40 GHz to 50 GHz Frequency Range ......................................... 4
Outline Dimensions ....................................................................... 16
Absolute Maximum Ratings ............................................................ 5
Ordering Guide .......................................................................... 16
REVISION HISTORY
5/15—Rev. 00.1214 to Rev. A
This Hittite Microwave Products data sheet has been reformatted
to meet the styles and standards of Analog Devices, Inc.
Updated Format .................................................................. Universal
Changes to Table 5 ............................................................................ 5
Added Applications Information Section and Figure 35;
Renumbered Sequentially.............................................................. 13
Added Ordering Guide Section .................................................... 16
Rev. A | Page 2 of 16
Data Sheet
HMC1127
SPECIFICATIONS
2 GHz TO 8 GHz FREQUENCY RANGE
TA = +25°C, VDD = +5 V, VGG2 = +1.4 V, IDD = 80 mA. Adjust VGG1 between −2 V and 0 V to achieve IDD = 80 mA typical.
Table 1.
Parameter
FREQUENCY RANGE
GAIN
Gain Variation Over Temperature
RETURN LOSS
Input
Output
OUTPUT POWER
Output Power for 1 dB Compression
Saturated Output Power
Output Third-Order Intercept
NOISE FIGURE
SUPPLY CURRENT
Symbol
Test Conditions/Comments
P1dB
PSAT
IP3
Measurement taken at POUT/tone = 10 dBm
IDD
VDD = 4 V, VDD = 5 V, VDD = 6 V, VDD = 7 V, or VDD = 8 V
Min
2
12
11
Typ
Max
8
15
0.005
Unit
GHz
dB
dB/°C
17
10
dB
dB
14
18.5
25.5
8
80
dBm
dBm
dBm
dBm
mA
8 GHz TO 30 GHz FREQUENCY RANGE
TA = +25°C, VDD = +5 V, VGG2 = +1.4 V, IDD = 80 mA. Adjust VGG1 between −2 V and 0 V to achieve IDD = 80 mA typical.
Table 2.
Parameter
FREQUENCY RANGE
GAIN
Gain Variation Over Temperature
RETURN LOSS
Input
Output
OUTPUT POWER
1 dB Compression (P1dB)
Saturated Output Power (PSAT)
Output Third-Order Intercept
NOISE FIGURE
SUPPLY CURRENT
Symbol
Test Conditions/Comments
P1dB
PSAT
IP3
Measurement taken at POUT/tone = 10 dBm
IDD
VDD = 4 V, VDD = 5 V, VDD = 6 V, VDD = 7 V, or VDD = 8 V
Min
8
10.5
9.5
Rev. A | Page 3 of 16
Typ
Max
30
13.5
0.006
Unit
GHz
dB
dB/°C
18
20
dB
dB
12.5
17.5
23
6.5
80
dBm
dBm
dBm
dBm
mA
HMC1127
Data Sheet
30 GHz TO 40 GHz FREQUENCY RANGE
TA = +25°C, VDD = +5 V, VGG2 = +1.4 V, IDD = 80 mA. Adjust VGG1 between −2 V and 0 V to achieve IDD = 80 mA typical.
Table 3.
Parameter
FREQUENCY RANGE
GAIN
Gain Variation Over Temperature
RETURN LOSS
Input
Output
OUTPUT POWER
1 dB Compression (P1dB)
Saturated Output Power (PSAT)
Output Third-Order Intercept
NOISE FIGURE
SUPPLY CURRENT
Symbol
Test Conditions/Comments
P1dB
PSAT
IP3
Measurement taken at POUT/tone = 10 dBm
IDD
VDD = 4 V, VDD = 5 V, VDD = 6 V, VDD = 7 V, or VDD = 8 V
Min
30
11.5
9
Typ
Max
40
14.5
0.011
Unit
GHz
dB
dB/°C
20
17
dB
dB
12
17
22
6
80
dBm
dBm
dBm
dBm
mA
40 GHz TO 50 GHz FREQUENCY RANGE
TA = +25°C, VDD = +5 V, VGG2 = +1.4 V, IDD = 80 mA. Adjust VGG1 between −2 V and 0 V to achieve IDD = 80 mA typical.
Table 4.
Parameter
FREQUENCY RANGE
GAIN
Gain Variation Over Temperature
RETURN LOSS
Input
Output
OUTPUT POWER
1 dB Compression (P1dB)
Saturated Output Power (PSAT)
Output Third-Order Intercept
NOISE FIGURE
SUPPLY CURRENT
Symbol
Test Conditions/Comments
P1dB
PSAT
IP3
Measurement taken at POUT/tone = 10 dBm
IDD
VDD = 4 V, VDD = 5 V, VDD = 6 V, VDD = 7 V, or VDD = 8 V
Min
40
11.5
8.5
Rev. A | Page 4 of 16
Typ
Max
50
14.5
0.012
Unit
GHz
dB
dB/°C
13
13
dB
dB
10.5
15
18
6.5
80
dBm
dBm
dBm
dBm
mA
Data Sheet
HMC1127
ABSOLUTE MAXIMUM RATINGS
Table 5.
Parameter
Drain Bias Voltage (VDD)
Gate Bias Voltage
VGG1
VGG2
For VDD = 8 V1
For VDD = 7 V
For VDD = 6 V
For VDD = 4 V to 5 V
RF Input Power (RFIN)
Channel Temperature
Continuous Power Dissipation, PDISS (TA =
85°C, Derate 26.1 mW/°C Above 85°C)
Thermal Resistance, RTH (Channel to Die
Bottom)
Storage Temperature Range
Operating Temperature Range
ESD Sensitivity, Human Body Model (HBM)
1
2
Rating
8.5 V
−3 V dc to 0 V dc
3.6 V
3.0 V
>2.0 V
>1.2 V
22 dBm
175°C
2.53 W
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
ESD CAUTION
38.3°C/W2
−65°C to +150°C
−55°C to +85°C
Class1A, passed
250 V
IDD < 125 mA.
Based on a thermal epoxy of 20 W/°C.
Rev. A | Page 5 of 16
HMC1127
Data Sheet
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
VDD
2
3
RFOUT
HMC1127
TOP VIEW
(Not to Scale)
1
5
VGG1
4
VGG2
13085-106
RFIN
Figure 2. Pad Configuration
Table 6. Pad Function Descriptions
Pad No.
1
2
Mnemonic
RFIN
VDD
3
4
RFOUT
VGG2
5
Die Bottom
VGG1
GND
Description
RF Input. This pin is ac-coupled and matched to 50 Ω.
Power Supply Voltage for the Amplifier, with Integrated RF Choke. Connect dc bias to this pad to provide drain
current (IDD).
RF Output. This pin is ac-coupled and matched to 50 Ω.
Gate Control 2 for Amplifier. Attach bypass capacitors as shown in Figure 38. For nominal operation, apply 1.4 V
to VGG2.
Gate Control 1 for Amplifier. Attach bypass capacitors as shown in Figure 38. Adjust this pad to achieve IDD = 80 mA.
Die bottom must be connected to RF/dc ground.
Rev. A | Page 6 of 16
Data Sheet
HMC1127
VGG2
Figure 3. RFIN Interface Schematic
Figure 6. VGG2 Interface Schematic
13085-104
RFIN
13085-103
13085-100
INTERFACE SCHEMATICS
13085-101
VGG1
Figure 4. VDD Interface Schematic
Figure 7. VGG1 Interface Schematic
RFOUT
13085-102
GND
Figure 5. RFOUT Interface Schematic
13085-105
VDD
Figure 8. GND Interface Schematic
Rev. A | Page 7 of 16
HMC1127
Data Sheet
TYPICAL PERFORMANCE CHARACTERISTICS
20
20
18
10
GAIN (dB)
14
–10
12
10
–20
8
6
–40
5
10
15
20
25
30
35
40
45
50
55
FREQUENCY (GHz)
4
0
–10
RETURN LOSS (dB)
–10
–20
+25°C
+85°C
–55°C
–40
10
15
20
25
30
35
40
45
20
25
30
35
40
45
50
–20
+25°C
+85°C
–55°C
–30
50
FREQUENCY (GHz)
–40
13085-003
RETURN LOSS (dB)
0
5
15
Figure 12. Gain vs. Frequency at Various Temperatures
0
0
10
FREQUENCY (GHz)
Figure 9. Response (Gain and Return Loss) vs. Frequency
–30
5
0
5
10
15
20
25
30
35
40
45
50
FREQUENCY (GHz)
13085-006
0
+25°C
+85°C
–55°C
13085-005
S21
S11
S22
–30
13085-002
RESPONSE (dB)
16
0
Figure 13. Output Return Loss vs. Frequency at Various Temperatures
Figure 10. Input Return Loss vs. Frequency at Various Temperatures
20
0
18
16
–10
GAIN (dB)
GAIN (dB)
14
–20
12
10
6
–40
0
5
10
15
20
25
30
FREQUENCY (GHz)
35
40
45
80mA
95mA
105mA
125mA
8
50
13085-004
–30
Figure 11. Gain vs. Frequency for Various Supply Voltages
(For VDD = 4 V, VGG2 =1.4 V; for VDD = 5 V, VGG2 = 1.4 V; for VDD = 6 V, VGG2 = 2 V;
for VDD = 7 V, VGG2 = 3 V; for VDD = 8 V, VGG2 = 3.6 V)
Rev. A | Page 8 of 16
4
0
5
10
15
20
25
30
35
40
45
50
FREQUENCY (GHz)
Figure 14. Gain vs. Frequency at Various IDD (VDD = 5 V, VGG2 = 1.4 V)
13085-007
4V
5V
6V
7V
8V
Data Sheet
HMC1127
21
21
19
17
17
15
11
11
9
9
7
7
5
5
3
10
14
18
22
26
30
34
38
42
46
50
FREQUENCY (GHz)
Figure 15. P1dB vs. Frequency at Various Temperatures
23
3
2
PSAT (dBm)
17
15
13
13
11
9
9
7
7
22
26
30
34
38
42
46
50
FREQUENCY (GHz)
Figure 16. PSAT vs. Frequency at Various Temperatures
19
15
17
PSAT (dBm)
21
17
13
11
9
6
10
14
18
22
26
30
34
38
42
46
50
80mA
95mA
105mA
125mA
7
18
22
26
30
34
38
42
46
FREQUENCY (GHz)
50
13085-010
14
50
13
9
3
10
46
15
11
80mA
95mA
105mA
125mA
6
42
Figure 19. PSAT vs. Frequency for Various Supply Voltages
(For VDD = 4 V, VGG2 = 1.4 V; for VDD = 5 V, VGG2 = 1.4 V; for VDD = 6 V, VGG2 = 2 V; for
VDD = 7 V, VGG2 = 3 V; for VDD =8 V, VGG2 = 3.6 V)
23
2
38
FREQUENCY (GHz)
19
5
34
4V
5V
6V
7V
8V
2
21
7
30
5
13085-009
5
18
26
15
11
14
22
21
17
10
18
23
19
6
14
Figure 18. P1dB vs. Frequency for Various Supply Voltages
(For VDD = 4 V, VGG2 = 1.4 V; for VDD = 5 V, VGG2 = 1.4 V; for VDD = 6 V, VGG2 = 2 V; for
VDD = 7 V, VGG2 = 3 V; for VDD =8 V, VGG2 = 3.6 V)
19
2
10
FREQUENCY (GHz)
+25°C
+85°C
–55°C
21
6
13085-012
6
Figure 17. P1dB vs. Frequency for Various Supply Currents
(VDD = 5 V, VGG2 = 1.4 V)
5
2
6
10
14
18
22
26
30
34
38
42
46
FREQUENCY (GHz)
Figure 20. PSAT vs. Frequency for Various Supply Currents
(VDD = 5 V, VGG2 = 1.4 V)
Rev. A | Page 9 of 16
50
13085-013
2
PSAT (dBm)
13
13085-011
P1dB (dBm)
13
13085-008
P1dB (dBm)
15
P1dB (dBm)
4V
5V
6V
7V
8V
19
+25°C
+85°C
–55°C
Data Sheet
30
30
28
28
26
26
24
24
22
22
IP3 (dBm)
20
18
20
4V
5V
6V
7V
8V
18
16
16
+25°C
+85°C
–55°C
14
14
12
12
2
6
14
10
18
22
26
30
34
38
42
46
50
FREQUENCY (GHz)
10
13085-014
10
Figure 21. Output IP3 vs. Frequency at Various Temperatures,
POUT = 0 dBm/Tone
2
6
14
10
18
22
26
30
34
38
42
46
50
FREQUENCY (GHz)
13085-017
IP3 (dBm)
HMC1127
Figure 24. Output IP3 vs. Frequency for Various Supply Voltages,
POUT = 0 dBm/Tone (For VDD = 4 V, VGG2 = 1.4 V; for VDD = 5 V, VGG2 = 1.4 V; for
VDD = 6 V, VGG2 = 2 V; for VDD = 7 V, VGG2 = 3 V; for VDD =8 V, VGG2 = 3.6 V)
70
30
28
60
26
50
20
18
80mA
95mA
105mA
16
14
40
30
20
10
12
2
6
10
14
18
22
26
30
34
38
42
46
50
FREQUENCY (GHz)
0
–5
13085-015
10
2GHz
10GHz
20GHz
30GHz
40GHz
50GHz
–2
1
4
7
10
POUT/TONE (dBm)
Figure 22. Output IP3 vs. Frequency for Various Supply Currents,
POUT = 0 dBm/Tone (VDD = 5 V, VGG2 = 1.4 V)
13085-018
22
IM3 (dBc)
IP3 (dBm)
24
Figure 25. Output Third-Order Intermodulation (IM3) vs. POUT/Tone at
VDD = 4 V, VGG2 = 1.4 V
70
70
60
60
50
40
30
30
20
10
0
–5
20
2GHz
10GHz
20GHz
30GHz
40GHz
50GHz
–2
10
0
–5
1
4
7
10
POUT/TONE (dBm)
Figure 23. Output Third-Order Intermodulation (IM3) vs. POUT/Tone at
VDD = 5 V, VGG2 = 1.4 V
Rev. A | Page 10 of 16
2GHz
10GHz
20GHz
30GHz
40GHz
50GHz
–2
1
4
7
10
POUT/TONE (dBm)
Figure 26. Output Third-Order Intermodulation (IM3) vs. POUT/Tone at
VDD = 6 V, VGG2 = 2 V
13085-019
IM3 (dBc)
40
13085-016
IM3 (dBc)
50
HMC1127
70
60
60
50
50
40
30
2GHz
10GHz
20GHz
30GHz
40GHz
50GHz
20
10
0
–5
2GHz
10GHz
20GHz
30GHz
40GHz
50GHz
10
–2
1
4
7
10
0
–5
–2
1
4
7
10
POUT/TONE (dBm)
Figure 27. Output Third-Order Intermodulation (IM3) vs. POUT/Tone at
VDD = 7 V, VGG2 = 3 V
Figure 30. Output Third-Order Intermodulation (IM3) vs. POUT/Tone at
VDD = 8 V, VGG2 = 3.6 V
12
12
11
+25°C
+85°C
–55°C
10
NOISE FIGURE (dB)
10
9
8
7
6
9
8
7
6
5
5
4
4
6
10
14
18
22
26
30
34
38
42
46
50
FREQUENCY (GHz)
3
Figure 28. Noise Figure vs. Frequency at Various Temperatures
2
–10
10
–20
9
–30
ISOLATION (dB)
11
8
7
6
80mA
90mA
100mA
110mA
10
14
22
26
30
34
38
42
46
50
+25°C
+85°C
–55°C
–40
–50
–60
–80
18
22
26
30
34
38
42
46
50
FREQUENCY (GHz)
13085-022
6
18
–70
3
2
14
Figure 31. Noise Figure vs. Frequency at Various Supply Voltages
(For VDD = 4 V, VGG2 = 1.4 V; for VDD = 5 V, VGG2 = 1.4 V; for VDD = 6 V, VGG2 = 2 V; for
VDD = 7 V, VGG2 = 3 V; for VDD =8 V, VGG2 = 3.6 V)
0
4
10
FREQUENCY (GHz)
12
5
6
Figure 29. Noise Figure vs. Frequency at Various Supply Currents
(VDD = 5 V, VGG2 = 1.4 V)
–90
0
5
10
15
20
25
30
35
40
45
50
FREQUENCY (GHz)
Figure 32. Reverse Isolation vs. Frequency at Various Temperatures
Rev. A | Page 11 of 16
13085-025
2
13085-021
3
4V
5V
6V
7V
8V
13085-024
11
NOISE FIGURE (dB)
30
20
POUT/TONE (dBm)
NOISE FIGURE (dB)
40
13085-023
IM3 (dBc)
70
13085-020
IM3 (dBc)
Data Sheet
Data Sheet
18
124
0.70
16
118
0.65
14
112
12
106
10
100
8
94
6
88
2
0
–9
–7
–5
–3
–1
1
3
5
7
INPUT POWER (dBm)
Figure 33. Power Compression at 24 GHz
POWER DISSIPATION (W)
IDD (mA)
82
9
0.55
0.50
0.45
0.40
0.35
0.30
76
0.25
70
0.20
–9
–7
–5
–3
–1
1
3
INPUT POWER (dBm)
5
7
9
13085-027
POUT
GAIN
PAE
IDD
4
2GHz
10GHz
20GHz
30GHz
40GHz
50GHz
0.60
13085-026
POUT (dBm), GAIN (dB), PAE (%)
HMC1127
Figure 34. Power Dissipation vs. Input Power at 85°C for Various Frequencies
Rev. A | Page 12 of 16
Data Sheet
HMC1127
APPLICATIONS INFORMATION
The HMC1127 is a GaAs, pHEMT, MMIC, cascode distributed
power amplifier.
0.102mm (0.004") THICK GaAs MMIC
The cascode distributed amplifier uses a fundamental cell of
two field effect transistors (FETs) in series, source to drain. This
fundamental cell then duplicates a number of times. The major
benefit of this is an increase in the operation bandwidth. The
basic schematic for a fundamental cell is given in Figure 35.
WIRE BOND
0.076mm
(0.003")
RF GROUND PLANE
VDD
VGG2
0.127mm (0.005") THICK ALUMINA
THIN FILM SUBSTRATE
RFIN
Figure 36. Die Without Moly Tab
13085-107
0.102mm (0.004") THICK GaAs MMIC
Figure 35. Fundamental Cell Schematic
The recommended bias sequence during power up is the
following:
1.
2.
3.
4.
5.
6.
WIRE BOND
0.076mm
(0.003")
Connect GND.
Set VGG1 to −2 V.
Set VDD to 5 V.
Set VGG2 to 1.4 V.
Increase VGG1 to achieve a typical quiescent current (IDQ) =
80 mA.
Apply the RF signal.
RF GROUND PLANE
0.150mm (0.005") THICK
MOLY TAB
0.254mm (0.010") THICK ALUMINA
THIN FILM SUBSTRATE
The recommended bias sequence during power down is the
following:
1.
2.
3.
4.
13083-038
VGG1
13083-037
RFOUT
Figure 37. Die With Moly Tab
Turn off the RF signal.
Decrease VGG1 to −2 V to achieve IDQ = 0 mA.
Decrease VGG2 to 0 V.
Decrease VDD to 0 V.
Place microstrip substrates as close to the die as possible to
minimize bond wire length. Typical die to substrate spacing is
0.076 mm to 0.152 mm (3 mil to 6 mil).
Handling Precautions
Increase VGG1 to 0 V.
To avoid permanent damage, follow these storage, cleanliness,
static sensitivity, transient, and general handling precautions:
MOUNTING AND BONDING TECHNIQUES FOR
MILLIMETERWAVE GAAS MMICS
•
Attach the die directly to the ground plane eutectically or with
conductive epoxy (see the Handling Precautions section, the
Mounting section, and the Wire Bonding section).
Microstrip, 50 Ω, transmission lines on 0.127 mm (5 mil) thick
alumina, thin film substrates are recommended for bringing the
radio frequency to and from the chip (see Figure 36). When using
0.254 mm (10 mil) thick alumina, thin film substrates, raise the
die 0.150 mm (6 mils) to ensure that the surface of the die is
coplanar with the surface of the substrate. One way to
accomplish this is to attach the 0.102 mm (4 mil) thick die to a
0.150 mm (6 mil) thick, molybdenum (Mo) heat spreader (moly
tab) which can then be attached to the ground plane (see Figure 36
and Figure 37).
•
•
•
•
Rev. A | Page 13 of 16
Place all bare die in either waffle or gel-based ESD
protective containers and then seal the die in an ESD
protective bag for shipment. Once the sealed ESD
protective bag is opened, store all die in a dry nitrogen
environment.
Handle the chips in a clean environment. Do not attempt
to clean the chip using liquid cleaning systems.
Follow ESD precautions to protect against ESD strikes.
While bias is applied, suppress instrument and bias supply
transients. Use shielded signal and bias cables to minimize
inductive pick up.
Handle the chip along the edges with a vacuum collet or
with a sharp pair of bent tweezers. The surface of the chip
may have fragile air bridges and must not be touched with
vacuum collet, tweezers, or fingers.
HMC1127
Data Sheet
Mounting
Wire Bonding
The chip is back metallized and can be die mounted with AuSn
eutectic preforms or with electrically conductive epoxy. Ensure
that the mounting surface is clean and flat.
RF bonds made with two 1 mil wires are recommended. Ensure
that these bonds are thermosonically bonded with a force of
40 grams to 60 grams. DC bonds of an 0.001 in. (0.025 mm)
diameter, thermosonically bonded, are recommended. Make
ball bonds with a force of 40 grams to 50 grams and wedge
bonds with a force of 18 grams to 22 grams. Make all bonds
with a nominal stage temperature of 150°C. Apply a minimum
amount of ultrasonic energy to achieve reliable bonds. Make all
bonds as short as possible, less than 12 mils (0.31 mm).
When eutectic die attached, a 80/20 gold tin preform is
recommended with a work surface temperature of 255°C and a
tool temperature of 265°C. When hot 90/10 nitrogen/hydrogen
gas is applied, ensure that tool tip temperature is 290°C. Do not
expose the chip to a temperature greater than 320°C for more
than 20 seconds. For attachment, no more than 3 seconds of
scrubbing is required.
When epoxy die attached, apply a minimum amount of epoxy
to the mounting surface so that a thin epoxy fillet is observed
around the perimeter of the chip once it is placed into position.
Cure epoxy per the schedule of the manufacturer.
Rev. A | Page 14 of 16
Data Sheet
HMC1127
APPLICATION CIRCUIT
VDD
0.1µF
100pF
2
1
RFIN
4
3
RFOUT
VGG1
VGG2
0.1µF
100pF
100pF
0.1µF
13085-029
5
Figure 38. Typical Applications Circuit
ASSEMBLY DIAGRAM
TO VDD SUPPLY
0.1µF
ALL BOND WIRES ARE
1mil DIAMETER
3mil NOMINAL GAP
100pF
50Ω
TRANSMISSION
LINE
0.1µF
TO VGG1 SUPPLY
Figure 39. Assembly Diagram
Rev. A | Page 15 of 16
100pF
0.1µF
TO VGG2 SUPPLY
13085-028
100pF
HMC1127
Data Sheet
OUTLINE DIMENSIONS
2.700
0.100
0.150
0.150
0.077
0.100 × 0.100
2
0.200
3
0.200
0.709
1.450
0.150
0.804
0.200
1
4
5
TOP VIEW
0.095
1.083
0.200
(CIRCUIT SIDE)
0.410
0.150
0.320
0.042
0.150
0.150
SIDE VIEW
03-19-2015-A
0.200
Figure 40. 5-Pad Bare Die [CHIP]
(C-5-3)
Dimensions shown in millimeters
ORDERING GUIDE
Model
HMC1127
Temperature Range
−55°C to +85°C
Package Description
5-Pad Bare Die [CHIP]
©2015 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D13085-0-5/15(A)
Rev. A | Page 16 of 16
Package Option
C-5-3