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Hittite Microwave Corporation
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HMC593LP3 / 593LP3E
v03.0309
Typical Applications
Features
The HMC593LP3(E) is ideal for:
Noise Figure: 1.2 dB
• Wireless Infrastructure
Output IP3: +29 dBm
• Fixed Wireless
Gain: 19 dB
• WiMAX WiBro / 4G
Low Loss LNA Bypass Path
• Tower Mounted Amplifiers
Single Supply: +3V or +5V
TE
50 Ohm Matched Output
Functional Diagram
General Description
LE
The HMC593LP3(E) is a versatile, high dynamic
range GaAs MMIC Low Noise Amplifier that
integrates a low loss LNA bypass mode on the IC.
The amplifier is ideal for WiBro & WiMAX receivers
operating between 3.3 and 3.8 GHz and provides
1.2 dB noise figure, 19 dB of gain and +29 dBm IP3
from a single supply of +5V @ 40mA. Input and output
return losses are 23 and 13 dB respectively with no
external matching components required. A single
control line (0/Vdd) is used to switch between LNA
mode and a low 2 dB loss bypass mode reducing the
current consumption to 10 μA.
B
SO
LOW NOISE AMPLIFIERS - SMT
8
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER w/ BYPASS MODE, 3.3 - 3.8 GHz
Electrical Specifi cations, TA = +25° C
Vdd = +3V
Parameter
LNA Mode
Min.
Typ.
14
17
Max.
Min.
Typ.
-3
-2
O
Frequency Range
Gain
Gain Variation Over Temperature
0.011
1.4
Input Return Loss
23
30
Output Return Loss
12
25
Reverse Isolation
39
10
LNA Mode
Bypass Mode
Units
Max.
Min.
Typ.
Max.
Min.
Typ.
Max.
-3
-2
dB
0.002
dB / °C
23
30
dB
13
25
3.3 - 3.8
16
0.002
Noise Figure
Power for 1dB Compression (P1dB)*
Vdd = +5V
Bypass Mode
GHz
19
0.011
1.8
1.2
1.6
dB
36
13
30
13
16
30
dBm
Saturated Output Power (Psat)
13.5
17
dBm
Third Order Intercept (IP3)*
(-20 dBm Input Power per tone,
1 MHz tone spacing)
22
29
dBm
Supply Current (Idd)
Switching
Speed
LNA Mode to Bypass Mode
Bypass Mode to LNA Mode
20
25
0.01
428
40
50
0.01
428
343
mA
ns
343
* P1dB and IP3 for LNA Mode are referenced to RFOUT while P1dB for Bypass Mode is referenced to RFIN.
8 - 190
dB
dB
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
ns
HMC593LP3 / 593LP3E
v03.0309
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER w/ BYPASS MODE, 3.3 - 3.8 GHz
30
20
20
10
S21
S11
S22
0
0
-10
TE
-10
10
-20
-30
-20
2.5
3.0
3.5
4.0
4.5
-40
2.0
5.0
20
B
SO
GAIN (dB)
Vdd = 3V
NOISE FIGURE (dB)
2
19
14
3.3
3.4
3.5
3.6
3.7
1.5
5.0
1
T=+25C
T=-40C
0.5
+25C
+85C
-40C
0
3.3
3.8
Vdd=3V
Vdd=5V
3.4
1.8
19
1.7
18
1.6
NOISE FIGURE (dB)
20
17
16
15
14
+2.4V
+2.7V
+3.0V
13
3.4
3.5
3.6
3.7
3.8
3.7
3.8
FREQUENCY (GHz)
LNA Noise Figure vs. Vdd
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LNA Gain vs. Vdd
GAIN (dB)
4.5
T=+85C
FREQUENCY (GHz)
12
3.3
4.0
2.5
Vdd = 5V
15
3.5
LNA Noise Figure vs. Temperature
21
16
3.0
FREQUENCY (GHz)
LNA Gain vs. Temperature
17
2.5
LE
FREQUENCY (GHz)
18
S21
S11
S22
-30
LOW NOISE AMPLIFIERS - SMT
30
-40
2.0
8
LNA Broadband Gain
& Return Loss @ Vdd= 5V
RESPONSE (dB)
RESPONSE (dB)
LNA Broadband Gain
& Return Loss @ Vdd= 3V
+4.5V
+5.0V
+5.5V
3.5
3.6
FREQUENCY (GHz)
1.5
1.4
1.3
1.2
2.4V
2.7V
3.0V
1.1
3.7
3.8
1
3.3
3.4
4.5V
5.0V
5.5V
3.5
3.6
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 191
HMC593LP3 / 593LP3E
v03.0309
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER w/ BYPASS MODE, 3.3 - 3.8 GHz
8
LNA Input Return Loss
vs. Temperature @ Vdd= 3V
LNA Input Return Loss
vs. Temperature @ Vdd= 5V
RETURN LOSS (dB)
+25C
+85C
-40C
-30
3.4
3.5
3.6
3.7
3.5
3.6
3.7
3.8
3.7
3.8
LE
0
+25C
+85C
-40C
3.4
3.5
3.6
+25C
+85C
-40C
-5
B
SO
-5
-25
3.3
3.4
LNA Output Return Loss
vs. Temperature @ Vdd= 5V
0
-20
-30
FREQUENCY (GHz)
LNA Output Return Loss
vs. Temperature @ Vdd= 3V
-15
-20
-40
3.3
3.8
FREQUENCY (GHz)
-10
+25C
+85C
-40C
-10
TE
-20
3.7
RETURN LOSS (dB)
RETURN LOSS (dB)
0
-10
-40
3.3
RETURN LOSS (dB)
LOW NOISE AMPLIFIERS - SMT
0
-10
-15
-20
-25
3.3
3.8
3.4
FREQUENCY (GHz)
3.5
3.6
FREQUENCY (GHz)
LNA Output IP3 vs. Vdd
O
LNA Output IP3 vs. Temperature
34
32
Vdd = 5V
30
30
26
24
26
IP3 (dBm)
IP3 (dBm)
28
+25C
+85C
-40C
Vdd = 3V
22
22
18
20
14
18
16
3.3
3.4
3.5
3.6
FREQUENCY (GHz)
8 - 192
3.7
3.8
10
3.3
2.4V
2.7V
3.0V
3.4
3.5
4.5V
5.0V
5.5V
3.6
3.7
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3.8
HMC593LP3 / 593LP3E
v03.0309
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER w/ BYPASS MODE, 3.3 - 3.8 GHz
LNA Psat vs. Temperature
20
+25C
+85C
-40C
Vdd = 5V
2.4V
2.7V
3.0V
20
4.5V
5.0V
5.5V
Psat (dBm)
18
16
14
16
TE
14
12
12
Vdd = 3V
10
3.3
3.4
3.5
3.6
3.7
10
3.3
3.8
FREQUENCY (GHz)
3.4
3.5
3.6
3.7
3.8
LE
FREQUENCY (GHz)
LNA Output P1dB vs. Temperature
20
LNA Output P1dB vs. Vdd
20
+25C
+85C
-40C
18
18
Vdd = 5V
14
12
10
3.3
Vdd = 3V
3.4
3.5
3.6
3.7
P1dB (dBm)
16
B
SO
P1dB (dBm)
16
14
12
LOW NOISE AMPLIFIERS - SMT
22
18
Psat (dBm)
8
LNA Psat vs. Vdd
10
3.8
2.4V
2.7V
3.0V
8
6
3.3
3.4
3.5
FREQUENCY (GHz)
3.6
4.5V
5.0V
5.5V
3.7
3.8
FREQUENCY (GHz)
-25
+25C
+85C
-40C
-30
ISOLATION (dB)
O
LNA Reverse Isolation vs. Temperature
Vdd = 3V
-35
Vdd = 5V
-40
-45
3.3
3.4
3.5
3.6
3.7
3.8
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 193
HMC593LP3 / 593LP3E
v03.0309
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER w/ BYPASS MODE, 3.3 - 3.8 GHz
Bypass Mode
Broadband Gain & Return Loss [2]
0
-5
-5
RESPONSE (dB)
0
S21
S11
S22
-10
-20
2.5
3.0
3.5
4.0
4.5
-25
2.0
5.0
0
B
SO
+25C
+85C
-40C
3.4
3.5
3.6
3.7
4.5
5.0
-1
-2
-3
+25C
+85C
-40C
-4
-5
3.3
3.8
O
Bypass Mode, Input IP3 vs. Temperature
3.4
0
-1
-1
+25C
+85C
-40C
-3
-4
-5
3.3
3.5
3.6
FREQUENCY (GHz)
[1] Vdd = 3V
3.7
3.8
3.7
3.8
-2
-3
+25C
+85C
-40C
-4
3.4
3.6
Bypass Mode, P1dB vs. Temperature
0
-2
3.5
FREQUENCY (GHz)
INSERTION LOSS (dB)
INSERTION LOSS (dB)
4.0
Bypass Mode
Insertion Loss vs. Temperature [2]
FREQUENCY (GHz)
8 - 194
3.5
0
-1
-5
3.3
3.0
FREQUENCY (GHz)
Bypass Mode
Insertion Loss vs. Temperature [1]
-4
2.5
LE
FREQUENCY (GHz)
-3
-15
-20
-25
2.0
-2
S21
S11
S22
-10
TE
-15
INSERTION LOSS (dB)
RESPONSE (dB)
Bypass Mode
Broadband Gain & Return Loss [1]
INSERTION LOSS (dB)
LOW NOISE AMPLIFIERS - SMT
8
-5
3.3
3.4
3.5
3.6
3.7
FREQUENCY (GHz)
[2] Vdd = 5V
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
3.8
HMC593LP3 / 593LP3E
v03.0309
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER w/ BYPASS MODE, 3.3 - 3.8 GHz
Typical Supply Current vs. Vdd
Vdd (V)
-1
-2
+2.4
9
+2.7
12
+3.0
16
+4.5
33
+5.0
39
+5.5
44
-3
-5
3.3
Absolute Maximum Ratings
+25C
+85C
-40C
-4
3.4
3.5
3.6
TE
INSERTION LOSS (dB)
0
Drain Bias Voltage (Vdd)
3.7
3.8
+8 V
RF Input Power (RFIN)
(Vdd = +5.0 Vdc)
LNA Mode +15 dBm
Bypass Mode +30 dBm
Channel Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 13 mW/°C above 85 °C)
850 mW
LE
FREQUENCY (GHz)
Thermal Resistance
(channel to ground paddle)
76.9 °C/W
Storage Temperature
-65 to +150° C
Operating Temperature
-40 to +85° C
ESD Sensitivity (HBM)
Class 1A
B
SO
Outline Drawing
8
Idd (mA)
LOW NOISE AMPLIFIERS - SMT
Bypass Mode, Psat vs. Temperature
O
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE
4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.
PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.
5. PACKAGE WARP SHALL NOT EXCEED 0.05mm.
6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND.
7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN.
Package Information
Part Number
Package Body Material
Lead Finish
MSL Rating
HMC593LP3
Low Stress Injection Molded Plastic
Sn/Pb Solder
MSL1
HMC593LP3E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
MSL1
Package Marking [3]
[1]
593
XXXX
[2]
593
XXXX
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 195
HMC593LP3 / 593LP3E
v03.0309
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER w/ BYPASS MODE, 3.3 - 3.8 GHz
Truth Table
LNA Mode
Vctl= Vdd
Bypass Mode
Vctl= 0V
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Pin Descriptions
Description
N/C
No connection necessary.
These pins may be connected to RF/DC ground.
3
RFIN
This pin is AC coupled
and matched to 50 Ohms.
4, 7, 15
GND
These pins must be connected to RF/DC ground.
10
RFOUT
This pin is AC coupled
and matched to 50 Ohms.
14
Vdd
Power supply voltage. Bypass capacitors are required. See
application circuit.
16
Interface Schematic
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Function
1, 2, 5, 6, 8,
9, 11 - 13
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Pin Number
B
SO
LOW NOISE AMPLIFIERS - SMT
8
Vctl
LNA/Bypass Mode Control Voltage. See truth table.
O
Application Circuit
8 - 196
Component
Value
C1, C2
100pF
C3
10KpF
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC593LP3 / 593LP3E
v03.0309
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER w/ BYPASS MODE, 3.3 - 3.8 GHz
TE
LE
B
SO
LOW NOISE AMPLIFIERS - SMT
8
Evaluation PCB
O
List of Materials for Evaluation PCB 117160 [1]
Item
Description
J1 - J2
PCB Mount SMA RF Connector
J3 - J6
DC Pin
C1, C2
100 pF Capacitor, 0402 Pkg.
C3
10 KpF Capacitor, 0402 Pkg.
U1
HMC593LP3 / HMC593LP3E Amplifier
PCB [2]
117158 Evaluation Board
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350 or Arlon 25FR
The circuit board used in the final application should
use RF circuit design techniques. Signal lines
should have 50 ohm impedance while the package
ground leads and exposed paddle should be connected directly to the ground plane similar to that
shown. A sufficient number of via holes should be
used to connect the top and bottom ground planes.
The evaluation circuit board shown is available from
Hittite upon request.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
8 - 197
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