FEATURES
FUNCTIONAL BLOCK DIAGRAM
High PSAT: 51 dBm
Power gain at PSAT: 20 dB
Small signal gain: 26 dB
Supply Voltage
VDD = 32 V at 1400 mA
50 Ω matched input and output
10-lead flange package
1
VGG2
HMC7327
2
10
VDD1
9
VGG1
VDD2
3
8
RFIN
APPLICATIONS
Test instrumentation
General communications
Radar
RFOUT
4
7
5
6
VGG1
VDD2
VGG2
GENERAL DESCRIPTION
The HMC7327 is a 120 W gallium nitride (GaN), MMIC power
amplifier that operates between 2.7 GHz and 3.8 GHz, packaged
in a 10-lead flange mount package.
VDD1
PACKAGE
BASE
GND
13527-001
Preliminary Technical Data
120 Watt, GaN Flange Mount MMIC
Power Amplifier, 2.7 GHz to 3.8 GHz
HMC7327
Figure 1.
The amplifier typically provides 26 dB of small signal gain and
51 dBm saturated output power. The amplifier draws 1400 mA
quiescent current from a 32 V dc supply. For ease of use, the RF
input/outputs are dc blocked and matched to 50 Ω.
Rev. PrA
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Tel: 781.329.4700
©2015 Analog Devices, Inc. All rights reserved.
Technical Support
www.analog.com
HMC7327
Preliminary Technical Data
TABLE OF CONTENTS
Features .............................................................................................. 1
Pin Configuration and Function Descriptions..............................6
Applications ....................................................................................... 1
Interface Schematics .....................................................................6
General Description ......................................................................... 1
Typical Performance Characteristics ..............................................7
Functional Block Diagram .............................................................. 1
Applications Information .............................................................. 11
Specifications..................................................................................... 3
Application Circuit ..................................................................... 11
Electrical Specifications ............................................................... 3
Evaluation Printed Circuit Board (PCB) ..................................... 12
Total Supply Current by VDD ....................................................... 4
Bill of Materials ........................................................................... 12
Absolute Maximum Ratings ............................................................ 5
Outline Dimensions ....................................................................... 13
ESD Caution .................................................................................. 5
Ordering Guide .......................................................................... 13
Rev. PrA | Page 2 of 13
Preliminary Technical Data
HMC7327
SPECIFICATIONS
ELECTRICAL SPECIFICATIONS
TA = 25°C, VDD = 32 V, IDD = 1400 mA, PW = 100 μs, duty cycle = 10, frequency range = 2.7 GHz to 3.2 GHz.
Table 1.
Parameter
FREQUENCY RANGE
GAIN
Small Signal Gain
Gain Flatness
Gain Variation over
Temperature
RETURN LOSS
Input
Output
POWER
Output Power for 4 dB
Compression
Power Gain for P4dB
Saturated Output Power
Power Gain for PSAT
Power Added Efficiency
TOTAL SUPPLY CURRENT
Symbol
Min
2.7
Typ
Max
3.2
Unit
GHz
24
26
±0.5
0.03
dB
dB
dB/°C
25
22
dB
dB
45
dBm
24
51
20
49
1400
dB
dBm
dB
%
mA
Test Conditions/Comments
Measured continuous wave (CW)
Measured CW
P4dB
PSAT
PAE
IDD
PSAT is defined as the output power at PIN = 31 dBm at 25°C
PSAT is defined as the output power at PIN = 31 dBm at 25°C
PAE at PSAT is defined as the output power at PIN = 31 dBm at 25°C
Adjust the gate bias voltage (VGGx) between −8 V and 0 V to
achieve an IDD = 1400 mA, typical
TA = 25°C, VDD = 32 V, IDD = 1400 mA, PW = 100 μs, duty cycle= 10, frequency range = 3.2 GHz to 3.8 GHz.
Table 2.
Parameter
FREQUENCY RANGE
GAIN
Small Signal Gain
Gain Flatness
Gain Variation over
Temperature
RETURN LOSS
Input
Output
POWER
Output Power for 4 dB
Compression
Power Gain for P4dB
Saturated Output Power
Power Gain for PSAT
Power Added Efficiency
TOTAL SUPPLY CURRENT
Symbol
Min
3.2
Typ
Max
3.8
Unit
GHz
24
26
±0.5
0.03
dB
dB
dB/°C
30
18
dB
dB
47.5
dBm
24
50.5
19.5
49
1400
dB
dBm
dB
%
mA
Test Conditions/Comments
Measured CW
Measured CW
P4dB
PSAT
PAE
IDD
PSAT is defined as the output power at PIN = 31 dBm at 25°C
PSAT is defined as the output power at PIN = 31 dBm at 25°C
PAE at PSAT is defined as the output power at PIN = 31 dBm at 25°C
Adjust the gate bias voltage (VGGx) between −8 V and 0 V to
achieve an IDD = 1400 mA, typical
Rev. PrA | Page 3 of 13
HMC7327
Preliminary Technical Data
TOTAL SUPPLY CURRENT BY VDD
Table 3.
Parameter
SUPPLY CURRENT
VDD = 24 V
VDD = 28 V
VDD = 32 V
Symbol
IDD
Min
Typ
1400
1400
1400
Max
Unit
mA
mA
mA
Rev. PrA | Page 4 of 13
Test Conditions/Comments
Adjust the gate bias voltage (VGGx) between −8 V and 0 V
to achieve an IDD = 1400 mA, typical
Preliminary Technical Data
HMC7327
ABSOLUTE MAXIMUM RATINGS
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
Table 4.
Parameter
Drain Bias Voltage (VDDx)
Gate Bias Voltage (VGGx)
RF Input Power (RFIN)
Channel Temperature
Continuous PDISS (T = 85°C) (Derate
TBD mw/°C above 85°C)
Thermal Resistance1 (Channel to Die Bottom)
Maximum Voltage Standing Wave Ratio
(VSWR)2
Storage Temperature Range
Operating Temperature Range
1
2
Rating
36 V
−8 V to 0 V
34 dBm
225°C
143 W
0.98°C/W
TBD
ESD CAUTION
−65°C to +150°C
−40°C to +85°C
Junction to back of package. Continuous wave (CW) operation.
Restricted by maximum power dissipation.
Rev. PrA | Page 5 of 13
HMC7327
Preliminary Technical Data
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
1
10
2
9
VDD1
VGG2
VDD2
VGG1
3
RFIN
HMC7327
8
RFOUT
TOP VIEW
(Not to Scale)
4
7
5
6
VDD2
VGG1
PACKAGE
BASE
GND
13527-002
VDD1
VGG2
Figure 2. Pin Configuration
Table 5. Pad Function Descriptions
Pad No.
1, 5
2, 4
3
6, 10
7, 9
8
Mnemonic
VGG2
VGG1
RFIN
VDD1
VDD2
RFOUT
Description
Gate Control Voltage for Second Stage. See Figure 3 for the VGG2 interface schematic.
Gate Control Voltage for First Stage. See Figure 4 for the VGG1 interface schematic.
RF Input. This pin is dc-coupled and matched to 50 Ω. See Figure 5 for the RFIN interface schematic.
Drain Bias for First Stage. See Figure 6 for the VDD1 interface schematic.
Drain Bias for Second Stage. See Figure 7 for the VDD2 interface schematic.
RF Output. This pad is RF-coupled and matched to 50 Ω. See Figure 8 for the RFOUT interface schematic.
INTERFACE SCHEMATICS
VDD1
13527-006
13527-003
VGG2
Figure 3. VGG2 Interface
Figure 6. VDD1 Interface
VDD2
13527-007
13527-004
VGG1
Figure 7. VDD2 Interface
Figure 4. VGG1 Interface
RFOUT
13527-005
13527-008
RFIN
Figure 5. RFIN Interface
Figure 8. RFOUT Interface
Rev. PrA | Page 6 of 13
Preliminary Technical Data
HMC7327
TYPICAL PERFORMANCE CHARACTERISTICS
30
30
20
GAIN (dB)
RESPONSE (dB)
25
S22
S21
S11
10
0
–10
–20
20
+85°C
+25°C
–40°C
15
3.4
3.0
2.6
4.2
3.8
4.6
FREQUENCY (GHz)
10
2.6
13527-009
–40
2.2
Figure 9. Gain and Return Loss, Measured CW
2.8
3.0
3.2
3.4
3.6
3.8
4.0
FREQUENCY (GHz)
13527-012
–30
Figure 12. Gain vs. Frequency at Various Temperatures, Measured CW
30
0
–5
RETURN LOSS (dB)
GAIN (dB)
+85°C
+25°C
–40°C
–10
25
20
24V
28V
32V
15
–15
–20
–25
–30
–35
2.8
3.0
3.2
3.4
3.6
3.8
4.0
FREQUENCY (GHz)
–45
2.6
13527-010
10
2.6
2.8
3.0
3.2
3.4
3.6
3.8
4.0
FREQUENCY (GHz)
13527-013
–40
Figure 13. Input Return Loss vs. Frequency at Various Temperatures,
Measured CW
Figure 10. Gain vs. Frequency at Various VDD, Measured CW
52
0
50
+85°C
+25°C
–40°C
48
–10
POUT (dBm)
RETURN LOSS (dB)
–5
–15
46
44
P4dB
PSAT
42
–20
40
–25
2.8
3.0
3.2
3.4
FREQUENCY (GHz)
3.6
3.8
4.0
36
2.6
13527-011
–30
2.6
Figure 11. Output Return Loss vs. Frequency at Various Temperatures,
Measured CW
2.8
3.0
3.2
3.4
FREQUENCY (GHz)
3.6
3.8
4.0
13527-014
38
Figure 14. POUT vs. Frequency, PSAT is Output Power at PIN = 31 dBm at 25°C
Rev. PrA | Page 7 of 13
Preliminary Technical Data
52
50
50
48
48
46
46
44
+85°C
+25°C
–40°C
40
40
38
38
2.8
3.0
3.2
3.4
3.6
3.8
4.0
FREQUENCY (GHz)
36
2.6
50
50
48
48
PSAT (dBm)
46
+85°C
+25°C
–40°C
42
38
3.4
3.6
3.8
4.0
FREQUENCY (GHz)
Figure 16. PSAT vs. Frequency at Various Temperatures, PSAT Defined as Output
Power at PIN = 31 dBm at +25°C, PIN = 32 dBm at +85°C,
PIN = 29 dBm at −40°C
36
2.6
50
50
48
48
PSAT (dBm)
46
700mA
1400mA
2100mA
42
38
3.6
3.8
4.0
FREQUENCY (GHz)
Figure 17. P4dB vs. Frequency at Various Quiescent Currents
36
2.6
13527-017
3.4
3.0
3.2
3.4
3.6
3.8
4.0
700mA
1400mA
2100mA
42
38
3.2
2.8
44
40
3.0
24V
28V
32V
36V
46
40
2.8
4.0
Figure 19. PSAT vs. Frequency at Various Supply Voltages, PSAT Defined as
Output Power at PIN = 31 dBm at 25°C
52
36
2.6
3.8
FREQUENCY (GHz)
52
44
3.6
42
38
3.2
3.4
44
40
3.0
3.2
46
40
13527-016
PSAT (dBm)
52
2.8
3.0
Figure 18. P4dB vs. Frequency at Various Supply Voltages
52
36
2.6
2.8
FREQUENCY (GHz)
Figure 15. P4dB vs. Frequency at Various Temperatures
44
24V
28V
32V
36V
13527-019
36
2.6
P4dB (dBm)
42
2.8
3.0
3.2
3.4
FREQUENCY (GHz)
3.6
3.8
4.0
13527-020
42
44
13527-018
P4dB (dBm)
52
13527-015
P4dB (dBm)
HMC7327
Figure 20. PSAT vs. Frequency at Various Quiescent Currents, PSAT Defined as
Output Power at PIN = 31 dBm at 25°C
Rev. PrA | Page 8 of 13
HMC7327
60
25
50
15
P4dBm
PSAT
5
FREQUENCY (GHz)
8000
30
6000
20
4000
10
2000
0
0
0
5
50
8000
30
6000
20
4000
10
2000
0
0
0
5
10
15
20
25
30
POUT (dBm), GAIN (dB), PAE (%)
10000
35
INPUT POWER (dBm)
8000
30
6000
20
4000
10
2000
0
0
5
ISOLATION (dB)
–20
40
+85°C
+25°C
–40°C
10
–60
3.3
3.4
FREQUENCY (GHz)
3.5
3.6
25
30
35
3.7
3.8
Figure 23. PAE vs. Frequency at Various Temperatures, PAE at PSAT Defined as
Output Power at PIN = 31 dBm at 25°C, PIN = 32 dBm at 85°C,
and PIN = 29 dBm at −40°C
+85°C
+25°C
–40°C
–40
–50
3.2
20
–30
20
–70
2.7
13527-033
PAE (%)
50
3.1
15
Figure 25. Power Compression at 3.8 GHz
–10
3.0
10
INPUT POWER (dBm)
60
2.9
10000
40
0
2.8
35
POUT
GAIN
PAE
IDD
70
0
2.7
30
12000
Figure 22. Power Compression at 3.2 GHz
30
25
0
13527-022
POUT (dBm), GAIN (dB), PAE (%)
60
40
20
Figure 24. Power Compression at 2.7 GHz
12000
IDD (mA)
POUT
GAIN
PAE
IDD
50
15
INPUT POWER (dBm)
Figure 21. Power Gain vs. Frequency, Power Gain at PSAT Defined as Output
Power at PIN = 31 dBm at 25°C
60
10
IDD (mA)
4.0
40
13527-024
3.8
3.6
3.4
3.2
3.0
2.8
13527-021
0
2.6
10000
2.8
2.9
3.0
3.1
3.2
3.3
3.4
FREQUENCY (GHz)
3.5
3.6
3.7
3.8
13527-025
10
POUT
GAIN
PAE
IDD
13527-023
20
12000
IDD (mA)
30
POUT (dBm), GAIN (dB), PAE (%)
POWER GAIN (dB)
Preliminary Technical Data
Figure 26. Reverse Isolation vs. Frequency at Various Temperatures,
Measured CW
Rev. PrA | Page 9 of 13
Preliminary Technical Data
60
60
55
55
GAIN (dB), P4dB (dBm), PSAT (dBm)
50
45
40
GAIN
P4dB
PSAT
35
30
25
20
15
45
40
30
25
20
30
32
34
36
10
700
Figure 27. Gain and Power vs. Supply Voltage at 3.2 GHz, PSAT Defined as
Output Power at PIN = 31 dBm at 25°C
45
40
40
SECOND HARMONIC (dBc)
50
25
+85°C
+25°C
–40°C
20
15
3.3
3.4
3.5
3.6
3.7
3.8
15
FREQUENCY (GHz)
0
2.7
13527-027
3.2
Figure 28. Second Harmonics vs. Frequency at Various Temperatures,
POUT = 35 dBm
24V
28V
32V
20
5
3.1
2100
25
5
3.0
1900
30
10
2.9
1700
1500
35
10
2.8
1300
Figure 30. Gain and Power vs. Supply Current at 3.2 GHz, PSAT Defined as
Output Power at PIN = 31 dBm at 25°C
45
30
1100
IDD (mA)
50
35
900
13527-029
28
13527-026
26
VDD (V)
0
2.7
GAIN
P4dB
PSAT
35
15
10
24
SECOND HARMONIC (dBc)
50
2.8
2.9
3.0
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
FREQUENCY (GHz)
13527-030
GAIN (dB), P4dB (dBm), PSAT (dBm)
HMC7327
Figure 31. Second Harmonics vs. Frequency at Various Supply Voltages,
POUT = 35 dBm
180
50
170
45
160
POWER DISSIPATION (W)
35
30
25
25dBm
30dBm
35dBm
40dBm
44dBm
20
15
140
130
120
110
100
90
80
60
5
50
2.8
2.9
3.0
3.1
3.2
3.3
3.4
3.5
3.6
3.7
3.8
FREQUENCY (GHz)
Figure 29. Second Harmonics vs. Frequency at Various POUT Levels
40
0
5
10
15
20
25
INPUT POWER (dBm)
Figure 32. Power Dissipation at 85°C
Rev. PrA | Page 10 of 13
30
35
13527-031
0
2.7
2.7GHz
3.0GHz
3.3GHz
3.6GHz
3.8GHz
150
70
10
13527-028
SECOND HARMONIC (dBc)
40
Preliminary Technical Data
HMC7327
APPLICATIONS INFORMATION
APPLICATION CIRCUIT
VGG1,
VGG2
C7
10µF
HMC7327
10
2
9
3
8
4
7
5
6
C2
1000pF
RFIN
C3
1µF
1
C4
1000pF
C6
1000pF
RFOUT
C5
1000pF
13527-032
C1
1µF
VDD1,
VDD2
Figure 33. Typical Application Circuit
Rev. PrA | Page 11 of 13
HMC7327
Preliminary Technical Data
13527-034
EVALUATION PRINTED CIRCUIT BOARD (PCB)
Figure 34. Evaluation PCB
BILL OF MATERIALS
Use RF circuit design techniques for the circuit board used in
the application. Provide 50 Ω impedance for the signal lines and
connect the package ground leads and exposed paddle directly
to the ground plane, similar to that shown in Figure 34. Use a
sufficient number of via holes to connect the top and bottom
ground planes. The evaluation circuit board shown is available
from Analog Devices, Inc., upon request.
Table 6. Bill of Materials for Evaluation PCB EVAL01HMC7327F10A
Item
J2, J3
J1
JP4, JP5
C1, C3
C2, C4, C5, C6
C7
U1
PCB
Rev. PrA | Page 12 of 13
Description
SRI K connector.
DC pins.
Preform jumpers.
1 μF capacitors, 0603 package.
1000 pF capacitors, 0603 package.
10 μF capacitor, 1210 package.
HMC7327F10A.
600-01312-00 evaluation PCB. Circuit
board material: Rogers 4350 or Arlon
25FR.
Preliminary Technical Data
HMC7327
OUTLINE DIMENSIONS
0.450
0.042
0.053
0.075
0.116
PIN 1
INDICATOR
0.138
1
10
0.288
0.010
0.388
0.350 SQ
0.682
0.576
5
0.050
6
Ø 0.070
TOP VIEW
0.100
0.025
SIDE VIEW
0.053
PKG-000000
08-06-2015-A
0.342
Figure 35. 10-Lead Module with Flange Heat Sink [CFMP]
(MF-10-1)
Dimensions shown in inches
ORDERING GUIDE
Model 1, 2
HMC7327F10A
Temperature
−40°C to +85°C
Description 3
10-Lead Module with Flange Heat Sink [CFMP]
Package
Option
MF-10-1
Package
Marking 4
H7327
XXXX
EVAL01-HMC7327F10A
Evaluation fixture only
When ordering the evaluation fixture only, reference the model number, EVAL01-HMC7327F10A.
The HMC7327F10A and the EVAL01-HMC7327F10A are not in production; for samples, contact an Analog Devices, Inc., sales representative.
3
HMC7327F10A lead finish is NiAu and the package is Copper 15 Tungston 85.
4
HMC7327F10A 4-digit lot number is represented by XXXX.
1
2
©2015 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
PR13527-0-9/15(PrA)
Rev. PrA | Page 13 of 13