10 Watt, GaN Power Amplifier,
2.7 GHz to 3.8 GHz
HMC1114
Preliminary Technical Data
FUNCTIONAL BLOCK DIAGRAM
Extended battery operation for public mobile radio
Power amplifier stage for wireless infrastructure
Test and measurement equipment
Commercial and military radar
General-purpose transmitter amplification
GND
GND
VDD1
GND
GND
VDD2
VDD2
GND
32
31
30
29
28
27
26
25
GND
GND
GND
RFIN
RFIN
GND
GND
GND
1
2
3
4
5
6
7
8
24
23
22
21
20
19
18
17
GND
GND
GND
RFOUT
RFOUT
GND
GND
GND
PACKAGE
BASE
13530-001
APPLICATIONS
HMC1114
9
10
11
12
13
14
15
16
High saturated output power (PSAT): 41.5 dBm
High small signal gain: 35 dB
High large signal gain: 25.5 dB
Bandwidth: 2.7 GHz to 3.8 GHz
High power added efficiency (PAE): 54%
High output IP3: 44 dBm
Supply voltage: VDD = 28 V at 150 mA
32-lead, 5 mm × 5 mm LFSCP package: 25 mm2
GND
VGG1
GND
GND
VGG2
GND
GND
GND
FEATURES
Figure 1.
GENERAL DESCRIPTION
The HMC1114 is a gallium nitride (GaN) broadband power
amplifier delivering 10 watts with more than 50% PAE across a
bandwidth of 2.7 GHz to 3.8 GHz. The HMC1114 provides
±0.5 dB gain flatness
Rev. PrA
The HMC1114 is ideal for pulsed or continuous wave (CW)
applications such as wireless infrastructure, radar, public mobile
radio, and general-purpose amplification.
The HMC1114 is housed in a compact LFCSP package.
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Tel: 781.329.4700
©2015 Analog Devices, Inc. All rights reserved.
Technical Support
www.analog.com
HMC1114
Preliminary Technical Data
TABLE OF CONTENTS
Features .............................................................................................. 1
Pin Configuration and Function Descriptions..............................6
Applications ....................................................................................... 1
Interface Schematics .....................................................................6
Functional Block Diagram .............................................................. 1
Typical Performance Characteristics ..............................................7
General Description ......................................................................... 1
Applications Information .............................................................. 13
Specifications..................................................................................... 3
Application Circuit ..................................................................... 13
Electrical Specifications ............................................................... 3
Evaluation Printed Circuit Board (PCB) ..................................... 14
Total Supply Current by VDD ....................................................... 4
Bill of Materials ........................................................................... 14
Absolute Maximum Ratings ............................................................ 5
Outline Dimensions ....................................................................... 15
ESD Caution .................................................................................. 5
Ordering Guide............................................................................... 15
Rev. PrA | Page 2 of 15
Preliminary Technical Data
HMC1114
SPECIFICATIONS
ELECTRICAL SPECIFICATIONS
TA = 25°C, VDD = 28 V, IDQ = 150 mA, frequency range = 2.7 GHz to 3.2 GHz.
Table 1.
Parameter
FREQUENCY RANGE
GAIN
Small Signal Gain
Gain Flatness
Power Gain for 4 dB
Compression
Power Gain for Saturated
Output Power
RETURN LOSS
Input
Output
POWER
Output Power for 4 dB
Compression
Saturated Output Power
Power Added Efficiency
OUTPUT THIRD-ORDER
INTERCEPT
TARGET QUIESCENT CURRENT
Symbol
Min
2.7
Typ
Max
3.2
Unit
GHz
32
35
±0.5
29
dB
dB
dB
25.5
dB
14
11
dB
dB
P4dB
39
dBm
PSAT
PAE
IP3
41.5
54
44
dBm
%
IDQ
150
mA
Test Conditions/Comments
Measurement taken at PIN = 16 dBm
Measurement taken at PIN = 16 dBm
Measurement taken at POUT ÷ tone = 30 dBm
Adjust the gate control voltage (VGGx) between −8 V and 0 V to
achieve an IDQ = 150 mA, typical
TA = 25°C, VDD = 28 V, IDQ = 150 mA, frequency range = 3.2 GHz to 3.8 GHz.
Table 2.
Parameter
FREQUENCY RANGE
GAIN
Small Signal Gain
Gain Flatness
Power Gain for 4 dB
Compression
Power Gain for Saturated
Output Power
RETURN LOSS
Input
Output
POWER
Output Power for 4 dB
Compression
Saturated Output Power
Power Added Efficiency
OUTPUT THIRD-ORDER
INTERCEPT
TARGET QUIESCENT CURRENT
Symbol
Min
3.2
Typ
Max
3.8
Unit
GHz
33
33
±1
28
dB
dB
dB
25
dB
25
9
dB
dB
P4dB
40
dBm
PSAT
PAE
IP3
40.5
53
44
dBm
%
IDQ
150
mA
Test Conditions/Comments
Measurement taken at PIN = 16 dBm
Measurement taken at PIN = 16 dBm
Measurement taken at POUT ÷ tone = 30 dBm
Adjust the gate control voltage (VGGx) between −8 V and 0 V to
achieve an IDQ = 150 mA, typical
Rev. PrA | Page 3 of 15
HMC1114
Preliminary Technical Data
TOTAL SUPPLY CURRENT BY VDD
Table 3.
Parameter
SUPPLY CURRENT
VDD = 25 V
VDD = 28 V
VDD = 32 V
Symbol
IDQ
Min
Typ
150
150
150
Max
Unit
mA
mA
mA
Rev. PrA | Page 4 of 15
Test Conditions/Comments
Adjust VGGx to achieve an IDQ = 150 mA, typical
Preliminary Technical Data
HMC1114
ABSOLUTE MAXIMUM RATINGS
Table 4.
Parameter
Drain Bias Voltage (VDDx)
Gate Bias Voltage (VGGx)
RF Input Power (RFIN)1
Channel Temperature
Continuous PDISS (T = 85°C) (Derate
227 mW/°C Above 120°C)
Thermal Resistance, Junction to
Back of Paddle
Maximum Forward Gate Current
Maximum Voltage Standing Wave
Ratio (VSWR)1
Maximum Peak Reflow
Temperature
Storage Temperature Range
Operating Temperature Range
1
Rating
32 V dc
30 dBm
225°C
24 W
4.4°C/W
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
ESD CAUTION
4 mA
6:1
260°C
−55°C to +150°C
−40°C to +85°C
Restricted by maximum power dissipation.
Rev. PrA | Page 5 of 15
HMC1114
Preliminary Technical Data
32
31
30
29
28
27
26
25
GND
GND
VDD1
GND
GND
VDD2
VDD2
GND
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
1
2
3
4
5
6
7
8
HMC1114
TOP VIEW
(Not to Scale)
24
23
22
21
20
19
18
17
GND
GND
GND
RFOUT
RFOUT
GND
GND
GND
NOTES
1. EXPOSED PAD. EXPOSED PAD MUST
BE CONNECTED TO RF/DC GROUND.
13530-002
GND
VGG1
GND
GND
VGG2
GND
GND
GND
9
10
11
12
13
14
15
16
GND
GND
GND
RFIN
RFIN
GND
GND
GND
Figure 2. Pin Configuration
Table 5. Pin Function Descriptions
Pin No.
1 to 3, 6 to 9, 11, 12, 14 to
19, 22 to 25, 28, 29, 31, 32
4, 5
Mnemonic
GND
10, 13
VGG1, VGG2
20, 21
RFOUT
26, 27, 30
VDD2, VDD1
RFIN
EPAD
Description
Ground. These pins and the package bottom (EPAD) must be connected to RF/dc ground. See
Figure 3 for the GND interface schematic.
RF Input. These pins are dc-coupled and matched to 50 Ω. See Figure 4 for the RFIN interface
schematic.
Gate Control Voltage. External bypass capacitors of 1 μF and 10 μF are required. See Figure 5
for the VGGx interface schematic.
RF Output. These pins are ac-coupled and matched to 50 Ω. See Figure 6 for the RFOUT
interface schematic.
Drain Bias for the Amplifiers. External bypass capacitors of 100 pF, 1 μF, and10 μF are
required. See Figure 7 for the VDDx interface schematic.
Exposed Pad. The exposed pad must be connected to RF/dc ground.
RFOUT
13530-006
GND
13530-003
INTERFACE SCHEMATICS
Figure 6. RFOUT Interface
Figure 3. GND Interface
VDD1 , VDD2
13530-004
13530-007
RFIN
Figure 4. RFIN Interface
Figure 7. VDDx Interface
13530-005
VGG1, VGG2
Figure 5. VGGx Interface
Rev. PrA | Page 6 of 15
Preliminary Technical Data
HMC1114
TYPICAL PERFORMANCE CHARACTERISTICS
40
40
30
36
S22
S21
S11
10
GAIN (dB)
RESPONSE (dB)
20
0
–10
–20
32
+85°C
+25°C
–40°C
28
24
2.25
2.50
2.75
3.00
3.25
3.50
3.75
4.00
4.25
4.50
FREQUENCY (GHz)
20
2.6
13530-008
–40
2.00
2.8
3.0
3.2
3.4
3.6
3.8
4.0
FREQUENCY (GHz)
13530-011
–30
Figure 11. Gain vs. Frequency at Various Temperatures
Figure 8. Gain and Return Loss
0
0
–5
–5
RETURN LOSS (dB)
RETURN LOSS (dB)
–10
–15
–20
–25
+85°C
+25°C
–40°C
–30
–10
+85°C
+25°C
–40°C
–15
2.8
3.0
3.2
3.4
3.6
3.8
4.0
FREQUENCY (GHz)
36
36
32
32
GAIN (dB)
40
32V
28V
25V
20V
3.2
3.4
3.6
3.8
4.0
300mA
225mA
150mA
100mA
28
3.0
3.2
3.4
3.6
3.8
FREQUENCY (GHz)
4.0
13530-010
2.8
20
2.6
2.8
3.0
3.2
3.4
3.6
3.8
FREQUENCY (GHz)
Figure 13. P1dB vs. Frequency at Various Supply Currents
Figure 10. Gain vs. Frequency at Various Supply Voltages
Rev. PrA | Page 7 of 15
4.0
13530-013
24
24
20
2.6
3.0
FREQUENCY (GHz)
40
28
2.8
Figure 12. Output Return Loss vs. Frequency at Various Temperatures
Figure 9. Input Return Loss vs. Frequency at Various Temperatures
GAIN (dB)
–20
2.6
13530-009
–40
2.6
13530-012
–35
Preliminary Technical Data
44
42
42
40
40
P1dB
P4dB
PSAT AT PIN = 16dBm
38
36
38
34
34
32
32
30
2.6
2.8
3.0
3.2
3.4
3.6
3.8
4.0
FREQUENCY (GHz)
30
2.6
42
42
40
40
PSAT (dBm)
3.2
3.4
3.6
3.8
4.0
38
32V
28V
25V
20V
38
+85°C
+25°C
–40°C
36
34
2.8
3.0
3.2
3.4
3.6
3.8
4.0
FREQUENCY (GHz)
30
2.6
13530-015
30
2.6
Figure 15. P4dB vs. Frequency at Various Supply Voltages
3.2
3.4
3.6
3.8
4.0
Figure 18. PSAT vs. Frequency at Various Supply Temperatures, Measurement
Taken at PIN = 16 dBm
42
42
40
40
P4dB (dBm)
44
38
32V
28V
25V
20V
34
3.0
FREQUENCY (GHz)
44
36
2.8
13530-018
32
38
300mA
225mA
150mA
100mA
36
34
32
30
2.6
2.8
3.0
3.2
3.4
3.6
3.8
FREQUENCY (GHz)
4.0
13530-016
32
Figure 16. PSAT vs. Frequency at Various Supply Voltages,
Measurement Taken at PIN = 16 dBm
30
2.6
2.8
3.0
3.2
3.4
3.6
3.8
FREQUENCY (GHz)
Figure 19. P4dB vs. Frequency at Various Supply Currents
Rev. PrA | Page 8 of 15
4.0
13530-019
P4dB (dBm)
44
32
PSAT (dBm)
3.0
Figure 17. P4dB vs. Frequency at Various Temperatures
44
34
2.8
FREQUENCY (GHz)
Figure 14. POUT vs. Frequency, Measurement Taken at PIN = 16 dBm
36
+85°C
+25°C
–40°C
36
13530-017
P4dB (dBm)
44
13530-014
POUT (dBm)
HMC1114
Preliminary Technical Data
HMC1114
44
50
42
48
46
38
IP3 (dBm)
300mA
225mA
150mA
100mA
36
34
3.2
3.4
3.6
3.8
4.0
34
2.6
48
46
46
44
44
IP3 (dBm)
+85°C
+25°C
–40°C
3.6
3.8
42
300mA
225mA
150mA
100mA
40
38
36
36
3.0
3.2
3.4
3.6
3.8
34
2.6
13530-021
2.8
FREQUENCY (GHz)
2.8
3.0
3.2
3.4
3.6
3.8
FREQUENCY (GHz)
Figure 21. Output IP3 vs. Frequency at Various Temperatures,
POUT/Tone = 30 dBm
Figure 24. Output IP3 vs. Frequency at Various Supply Currents,
POUT/Tone = 30 dBm
50
35
33
3.8GHz
3.25GHz
2.7GHz
45
31
40
29
IM3 (dBc)
27
25
23
P1dB
P4dB
PSAT AT PIN = 16dBm
21
35
30
25
20
19
15
2.8
3.0
3.2
3.4
3.6
FREQUENCY (GHz)
3.8
4.0
13530-022
17
15
2.6
3.4
13530-024
IP3 (dBm)
48
38
3.2
Figure 23. Output IP3 vs. Frequency at Various Supply Voltages,
POUT/Tone = 30 dBm
50
40
3.0
FREQUENCY (GHz)
50
42
2.8
13530-023
3.0
13530-020
2.8
Figure 20. PSAT vs. Frequency at Various Supply Currents, Measurement Taken
at PIN = 16 dBm
34
2.6
32V
28V
25V
20V
40
36
FREQUENCY (GHz)
POWER GAIN (dB)
42
38
32
30
2.6
44
10
15
17
19
21
23
25
27
29
31
33
35
POUT/TONE (dBm)
Figure 25. Output Third-Order Intermodulation (IM3) at VDD = 20 V
Figure 22. Power Gain vs. Frequency
Rev. PrA | Page 9 of 15
13530-025
PSAT (dBm)
40
HMC1114
Preliminary Technical Data
50
3.8GHz
3.25GHz
2.7GHz
40
IM3 (dBc)
35
30
35
30
25
25
20
20
15
15
19
21
23
25
27
29
31
33
35
POUT/TONE (dBm)
10
15
17
23
25
27
29
31
1500
POUT
GAIN
PAE
IDD
60
POUT (dBm), GAIN (dB), PAE (%)
1200
750
30
600
IDD (mA)
1050
900
450
20
300
50
900
800
700
40
600
500
30
400
300
20
200
100
150
4
8
12
16
0
24
20
10
–4
13530-027
0
INPUT POWER (dBm)
0
8
12
16
20
60
POUT (dBm), GAIN (dB), PAE (%)
3.8GHz
3.25GHz
2.7GHz
40
35
30
25
20
1000
POUT
GAIN
PAE
IDD
50
900
800
700
40
600
500
30
400
300
20
200
15
17
19
21
23
25
27
29
POUT/TONE (dBm)
31
33
35
10
–4
Figure 28. Output IM3 at VDD = 25 V
0
4
8
12
16
20
INPUT POWER (dBm)
Figure 31. Power Compression at 3.8 GHz
Rev. PrA | Page 10 of 15
0
24
13530-031
100
13530-028
10
15
0
24
Figure 30. Power Compression at 3.2 GHz
50
IM3 (dBc)
4
INPUT POWER (dBm)
Figure 27. Power Compression at 2.7 GHz
45
35
1000
POUT
GAIN
PAE
IDD
1350
40
10
–4
33
Figure 29. Output IM3 at VDD = 32 V
60
POUT (dBm), GAIN (dB), PAE (%)
21
POUT/TONE (dBm)
Figure 26. Output IM3 at VDD = 28 V
50
19
13530-030
17
IDD (mA)
10
15
13530-026
IM3 (dBc)
40
3.8GHz
3.25GHz
2.7GHz
45
IDD (mA)
45
13530-029
50
Preliminary Technical Data
HMC1114
0
45
ISOLATION (dB)
–20
–30
–40
–50
–70
2.6
2.8
3.0
3.2
3.4
3.6
3.8
4.0
FREQUENCY (GHz)
35
30
P1dB
P4dB
PSAT AT PIN = 16dBm
25
20
24
13530-032
–60
40
25
Figure 32. Reverse Isolation vs. Frequency at Various Temperatures
27
28
Figure 35. Gain and Power vs. Supply Voltage (VDD) at 3.2 GHz
45
20
18
40
3.8GHz
3.25GHz
2.7GHz
16
POWER DISSIPATION (W)
GAIN (dB), P4dB (dBm), PSAT (dBm)
26
VDD (V)
13530-035
GAIN (dB), P4dB (dBm), PSAT (dBm)
+85°C
+25°C
–40°C
–10
35
30
P1dB
P4dB
PSAT AT PIN = 16dBm
25
14
12
10
8
6
4
200
250
IDD (mA)
300
0
13530-033
150
0
15
20
25
Figure 36. Power Dissipation at 85°C
40
80
35
SECOND HARMONIC (dBc)
+85°C
+25°C
–40°C
70
60
50
40
30
20
30
25
20
+85°C
+25°C
–40°C
15
10
5
3.0
3.2
3.4
FREQUENCY (GHz)
3.6
3.8
4.0
0
2.6
13530-034
2.8
Figure 34. PAE vs. Frequency at Various Temperatures, PIN = 16 dBm
2.8
3.0
3.2
3.4
FREQUENCY (GHz)
3.6
3.8
4.0
13530-037
PAE (%)
10
INPUT POWER (dBm)
Figure 33. Gain and Power vs. Supply Current (IDD), at 3.2 GHz
10
2.6
5
13530-036
2
20
100
Figure 37. Second-Order Harmonics at Various Temperatures, POUT = 30 dBm
Rev. PrA | Page 11 of 15
HMC1114
Preliminary Technical Data
40
50
45
40
SECOND HARMONIC (dBc)
30
25
32V
28V
25V
20V
20
15
10
30
25
20dBm
25dBm
30dBm
35dBm
40dBm
20
15
5
2.8
3.0
3.2
3.4
3.6
3.8
4.0
FREQUENCY (GHz)
Figure 38. Second-Order Harmonics at Various Supply Voltages,
POUT = 30 dBm
0
2.6
2.8
3.0
3.2
3.4
3.6
3.8
4.0
FREQUENCY (GHz)
Figure 39. Second-Order Harmonics at Various Output Powers
Rev. PrA | Page 12 of 15
13530-039
0
2.6
35
10
5
13530-038
SECOND HARMONIC (dBc)
35
Preliminary Technical Data
HMC1114
APPLICATIONS INFORMATION
APPLICATION CIRCUIT
VDD1 , VDD2
C1
1000pF
26
7
18
8
17
15
19
RFOUT
16
20
6
C5
1µF
C4
1µF
C8
10µF
25
28
27
21
5
13
22
4
14
C3
1µF
VGG1, VGG2
Figure 40. Typical Application Circuit
Rev. PrA | Page 13 of 15
C10
10µF
13530-040
C9
10µF
30
23
3
11
24
2
12
1
9
RFIN
29
32
C2
1000pF
31
C6
10µF
10
C7
10µF
HMC1114
Preliminary Technical Data
EVALUATION PRINTED CIRCUIT BOARD (PCB)
J3
1
GND
VG2
GND
VDD
VG1
C8
C7
C3
C2
J1
U1
JP1
RFIN
C6
C1
C4
C5
RFOUT
C10
13530-041
C9
J2
Figure 41. Evaluation Printed Circuit Board (PCB)
BILL OF MATERIALS
Use RF circuit design techniques for the circuit board used in
the application. Provide 50 Ω impedance for the signal lines and
directly connect the package ground leads and exposed paddle
to the ground plane, similar to that shown in Figure 41. Use a
sufficient number of via holes to connect the top and bottom
ground planes. The evaluation circuit board shown in Figure 41
is available from Analog Devices, Inc., upon request.
Table 6. Bill of Materials for Evaluation PCB EVL1HMC1114LP5D
Item
J1, J2
J3
JP1
C1, C2
C3 to C6
C7 to C10
U1
PCB
Rev. PrA | Page 14 of 15
Description
SMA connectors.
DC pins.
Preform jumper.
1000 pF capacitors, 0603 package.
1 μF capacitors, 0603 package.
10 μF capacitor, 1210 package.
HMC1114LP5DE.
600-01209-00 evaluation PCB. Circuit
board material: Rogers 4350 or Arlon
25FR.
Preliminary Technical Data
HMC1114
OUTLINE DIMENSIONS
PIN 1
INDICATOR
0.30
0.25
0.18
24
1
0.50
BSC
3.15
3.00 SQ
2.85
EXPOSED
PAD
8
17
TOP VIEW
6° BSC
SIDE VIEW
0.55
0.50
0.35
1.53
1.34
1.15
COPLANARITY
0.08
PIN 1
INDICATOR
32
25
16
BOTTOM VIEW
3.50 REF
9
0.50 MIN
FOR PROPER CONNECTION OF
THE EXPOSED PAD, REFER TO
THE PIN CONFIGURATION AND
FUNCTION DESCRIPTIONS
SECTION OF THIS DATA SHEET.
PKG-000000
SEATING
PLANE
08-06-2015-A
5.10
5.00 SQ
4.90
Figure 42. 32-Lead Lead Frame Chip Scale Package [LFCSP]
5 mm × 5 mm Body and 1.34 mm Package Height
(HCP-32-2)
Dimensions shown in millimeters
ORDERING GUIDE
Model1, 2, 3
HMC1114LP5DE
Temperature
−40°C to +85°C
MSL
Rating4
MSL3
Description5
32-Lead Lead Frame Chip Scale Package [LFCSP]
Package
Option
HCP-32-2
Package
Marking6
H1114
XXXX
EVL1-HMC1114LP5D
HMC1114LP5DE Evaluation Board
1
HMC1114LP5DE is an LFCSP premolded copper alloy leadframe.
When ordering the evaluation board only, reference the model number, EVL1-HMC1114LP5D.
3
The HMC1114LP5DE and EVL1-HMC1114LP5D are not in production; for preproduction samples, contact an Analog Devices, Inc., sales representative.
4
Maximum peak reflow temperature of 260°C.
5
HMC1114LP5DE lead finish is NiPdAu.
6
HMC1114LP5DE 4-digit lot number is represented by XXXX.
2
©2015 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
PR13530-0-8/15(PrA)
Rev. PrA | Page 15 of 15