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HMC7357LP5GE
v00.0813
AMPLIFIERS - LINEAR & POWER - SMT
GaAs pHEMT MMIC 2 WATT
POWER AMPLIFIER, 5.5 - 8.5 GHz
Typical Applications
Features
The HMC7357LP5GE is ideal for:
+35 dBm Pout @ 34% PAE
• Point-to-Point Radios
High P1dB Output Power: +34 dBm
• Point-to-Multi-Point Radios
High Output IP3: +41.5 dBm
• VSAT & SATCOM
High Gain: 29 dB
50 Ohm Matched Input/Output
Supply Voltage: Vdd = +8V @ 1200 mA
24-Lead 5x5 mm SMT Package
General Description
Functional Diagram
The HMC7357LP5GE is a three-stage GaAs pHEMT
MMIC Medium Power Amplifier that operates between
5.5 and 8.5 GHz. The amplifier provides 29 dB of gain
and +35 dBm of saturated output power at 34% PAE
from a +8V supply. With an excellent Output IP3 of
+41.5 dBm, the HMC7357LP5GE is ideal for linear
applications such as high capacity point-to-point
and point-to-multi-point radios or VSAT/SATCOM
applications demanding +35 dBm of efficient saturated
output power. The RF I/Os are internally matched
to 50 Ohms for ease of use. The HMC7357LP5GE
is packaged in a leadless 5x5 mm plastic surface
mount package and is compatible with surface mount
manufacturing techniques.
Electrical Specifications, TA = +25° C
Vdd1 = Vdd2 = Vdd3 = Vdd4 = 8V, Idd = 1200 mA [1]
Parameter
Min.
Frequency Range
Gain
Typ.
Max.
Min.
5.5 - 7
26.5
Gain Variation Over Temperature
29.5
Typ.
7 - 8.5
28
0.0214
Max.
Units
GHz
31
dB
0.0234
dB/ °C
dB
Input Return Loss
14
14
Output Return Loss
22
15
dB
34.5
dBm
Output Power for 1 dB Compression (P1dB)
31.5
Saturated Output Power (Psat)
34.5
31.5
35
35
dBm
Output Third Order Intercept (IP3)[2]
41.5
41.5
dBm
Total Supply Current (Idd)
1200
1200
mA
[1] Adjust Vgg between -2 to -0.4V to achieve Idd = 1200 mA typical.
[2] Measurement taken at +8V @ 1200 mA, Pout / Tone = +20 dBm
1
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC7357LP5GE
v00.0813
GaAs pHEMT MMIC 2 WATT
POWER AMPLIFIER, 5.5 - 8.5 GHz
36
30
34
20
32
10
30
0
-10
28
26
-20
24
-30
22
-40
4
5
6
7
8
9
20
5.5
10
6
6.5
FREQUENCY (GHz)
S21
7
7.5
8
8.5
FREQUENCY (GHz)
S11
S22
+25 C
Input Return Loss vs. Temperature
+85 C
-40 C
Output Return Loss vs. Temperature
0
0
-10
RESPONSE (dB)
RETURN LOSS (dB)
-5
-10
-15
-20
-30
-20
-25
5.5
6
6.5
7
7.5
8
-40
5.5
8.5
6
6.5
FREQUENCY (GHz)
+25 C
+85 C
-40 C
+25 C
40
38
38
36
36
34
32
28
28
7
7.5
8
8.5
26
5.5
6
+85 C
6.5
-40 C
+85 C
7
7.5
8
8.5
FREQUENCY (GHz)
FREQUENCY (GHz)
+25 C
8.5
32
30
6.5
8
34
30
6
7.5
P1dB vs Supply Voltage
40
P1dB (dBm)
P1dB (dBm)
P1dB vs. Temperature
26
5.5
7
FREQUENCY (GHz)
AMPLIFIERS - LINEAR & POWER - SMT
Gain vs. Temperature
40
GAIN (dB)
RESPONSE (dB)
Gain & Return Loss
-40 C
6V
7V
8V
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
2
HMC7357LP5GE
v00.0813
GaAs pHEMT MMIC 2 WATT
POWER AMPLIFIER, 5.5 - 8.5 GHz
Psat vs. Supply Voltage
40
38
38
36
36
Psat (dBm)
Psat (dBm)
40
34
32
34
32
30
30
28
28
26
5.5
6
6.5
7
7.5
8
26
5.5
8.5
6
6.5
+25 C
+85 C
6V
-40 C
P1dB vs. Supply Current
38
38
36
36
Psat (dBm)
40
34
32
30
28
7
7.5
8
26
5.5
8.5
1000 mA
6
1200 mA
6.5
46
44
44
IP3 (dBm)
IP3 (dBm)
46
42
40
38
38
7
7.5
8
8.5
36
5.5
6
+85 C
1000mA
6.5
FREQUENCY (GHz)
+25 C
8
8.5
1200mA
42
40
6.5
7.5
Output IP3 vs. Supply Current,
Pout/tone = +20 dBm
48
6
7
800 mA
48
36
5.5
8V
FREQUENCY (GHz)
Output IP3 vs. Temperature,
Pout/tone = +20 dBm
3
7V
FREQUENCY (GHz)
800 mA
8.5
32
28
6.5
8
34
30
6
7.5
Psat vs. Supply Current
40
26
5.5
7
FREQUENCY (GHz)
FREQUENCY (GHz)
P1dB (dBm)
AMPLIFIERS - LINEAR & POWER - SMT
Psat vs. Temperature
7
7.5
8
8.5
FREQUENCY (GHz)
-40 C
800 mA
1000 mA
1200 mA
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC7357LP5GE
v00.0813
GaAs pHEMT MMIC 2 WATT
POWER AMPLIFIER, 5.5 - 8.5 GHz
Output IP3 vs. Supply Voltage,
Pout/tone = +20 dBm
Output IM3 @ Vdd = +6V
48
46
60
IM3 (dBc)
IP3 (dBm)
44
42
50
40
40
30
38
36
5.5
20
6
6.5
7
7.5
8
8.5
10
12
14
16
FREQUENCY (GHz)
6V
7V
6 GHz
8V
20
22
24
7 GHz
8 GHz
Output IM3 @ Vdd = +8V
70
70
60
60
IM3 (dBc)
IM3 (dBc)
Output IM3 @ Vdd =+7V
50
40
30
50
40
30
20
20
10
12
14
16
18
20
22
24
10
12
14
16
Pout/TONE (dBm)
6 GHz
7 GHz
8 GHz
6 GHz
25
1200
10
5
1150
0
-4
-2
0
2
4
6
8
Gain
Idd
7 GHz
8 GHz
10
1350
35
1300
30
25
1250
20
15
1200
10
5
1150
0
-10
-8
-6
-4
-2
0
2
4
6
8
10
INPUT POWER (dBm)
INPUT POWER (dBm)
Pout
24
Idd (mA)
15
Idd (mA)
1250
20
Pout(dBm), GAIN(dB), PAE(%)
1300
30
-6
22
40
35
-8
20
Power Compression @ 7 GHz
1350
40
-10
18
Pout/TONE (dBm)
Power Compression @ 6 GHz
Pout(dBm), GAIN(dB), PAE(%)
18
Pout/TONE (dBm)
AMPLIFIERS - LINEAR & POWER - SMT
70
PAE
Pout
Gain
PAE
Idd
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
4
HMC7357LP5GE
v00.0813
GaAs pHEMT MMIC 2 WATT
POWER AMPLIFIER, 5.5 - 8.5 GHz
Power Compression @ 8 GHz
Reverse Isolation vs. Temperature
-40
1300
30
ISOLATION (dB)
Pout(dBm), GAIN(dB), PAE(%)
35
25
1250
20
15
Idd (mA)
1200
10
5
-50
-60
-70
-80
1150
0
-10
-8
-6
-4
-2
0
2
4
6
8
-90
5.5
10
INPUT POWER (dBm)
Pout
Gain
6
6.5
7
7.5
8
8.5
FREQUENCY (GHz)
PAE
Idd
+25 C
+85 C
-40 C
Gain & Power vs.
Supply Voltage @ 7 GHz
Gain & Power vs.
Supply Current @ 7 GHz
40
40
Gain (dB), P1dB (dBm), Psat (dBm)
Gain (dB), P1dB (dBm), Psat (dBm)
AMPLIFIERS - LINEAR & POWER - SMT
-30
1350
40
35
30
25
20
15
35
30
25
20
15
800
1000
1200
6
7
Idd (mA)
GAIN(dB)
8
Vdd (V)
P1dB(dBm)
Psat(dBm)
GAIN(dB)
P1dB(dBm)
Psat(dBm)
Power Dissipation
POWER DISSIPATION (W)
10
9
8
7
6
5
4
-10
-8
-6
-4
-2
0
2
4
6
8
10
INPUT POWER (dBm)
6 GHz
5
7 GHz
8 GHz
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC7357LP5GE
v00.0813
GaAs pHEMT MMIC 2 WATT
POWER AMPLIFIER, 5.5 - 8.5 GHz
Typical Supply Current vs. Vdd
Drain Bias Voltage (Vdd)
+9 Vdc
Vdd (V)
Idd (mA)
Gate Bias Voltage (Vgg)
-2 to -0.4 Vdc
+6
1200
RF Input Power (RFIN)
+22 dBm
+7
1200
Channel Temperature
175 °C
+8
1200
Continuous Pdiss (T= 85 °C)
(derate 133mW/°C above 85 °C)
12.6 W
Thermal Resistance
(channel to ground paddle)
7.5 °C/W
Storage Temperature
-65 to 150°C
Operating Temperature
-40 to 85 °C
ESD Sensitivity (HBM)
Class 1A, passed 250V
Adjust Vgg to achieve Idd = 1200 mA
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
AMPLIFIERS - LINEAR & POWER - SMT
Absolute Maximum Ratings
Package Information
Part Number
Package Body Material
Lead Finish
MSL Rating [2]
Package Marking [1]
HMC7357LP5GE
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
MSL1
H7357
XXXX
[1] 4-Digit lot number XXXX
[2] Max peak reflow temperature of 260 °C
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
6
HMC7357LP5GE
v00.0813
GaAs pHEMT MMIC 2 WATT
POWER AMPLIFIER, 5.5 - 8.5 GHz
Pin Descriptions
AMPLIFIERS - LINEAR & POWER - SMT
Pad Number
7
Function
Description
1, 4, 5, 6, 7, 9,
12, 13, 14, 17,
18, 19, 22, 24
N/C
These pins are not connected internally; however all data
shown herein was measured with these pins connected to
RF/DC ground externally.
2, 15
GND
These pins and exposed ground paddle must be connected
to RF/DC ground.
3
RFIN
This pin is DC coupled and matched to 50 Ohms.
8, 23
Vgg2, Vgg1
Gate control for PA. Adjust Vgg to achieve recommended
bias current. External bypass capacitors of 100 pF, 10 nF,
and 4.7 μF are required. Apply Vgg bias to either pin 8 or
pin 23.
10, 11, 20, 21
Vdd3, Vdd4, Vdd2,
Vdd1
Drain bias voltage for the amplifier. External bypass capacitors of 100 pF, 10 nF, and 4.7 μF are required.
16
RFOUT
This pin is DC coupled and matched to 50 Ohms.
Interface Schematic
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC7357LP5GE
v00.0813
GaAs pHEMT MMIC 2 WATT
POWER AMPLIFIER, 5.5 - 8.5 GHz
AMPLIFIERS - LINEAR & POWER - SMT
Application Circuit
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
8
HMC7357LP5GE
v00.0813
GaAs pHEMT MMIC 2 WATT
POWER AMPLIFIER, 5.5 - 8.5 GHz
AMPLIFIERS - LINEAR & POWER - SMT
Evaluation PCB
List of Materials for Evaluation PCB EV1HMC7357LP5
Item
Description
J1 - J4
"K" Connector, SRI
J7, J8
DC Pin
C2, C3, C9, C12, C16, C19
100 pF Capacitor, 0402 Pkg.
C1, C4, C10, C11, C15, C20
10000 pF Capacitor, 0402 Pkg.
C21, C22, C25, C27, C28, C30
4.7 uF Capacitor, Case A Pkg.
R1, R2
43.2 Ohm Resistor, 0402 Pkg
U1
HMC7357LP5GE Amplifier
PCB [2]
600-00901-00 Eval Board
[1]
The circuit board used in the application should use
RF circuit design techniques. Signal lines should
have 50 Ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used to
connect the top and bottom ground planes. The
evaluation circuit board shown is available from Hittite upon request.
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350
9
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC7357LP5GE
v00.0813
GaAs pHEMT MMIC 2 WATT
POWER AMPLIFIER, 5.5 - 8.5 GHz
AMPLIFIERS - LINEAR & POWER - SMT
Notes:
For price, delivery and to place orders: Hittite Microwave Corporation, 2 Elizabeth Drive, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
10