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HMC636ST89 / 636ST89E
v02.0311
Typical Applications
Features
The HMC636ST89(E) is ideal for:
Low Noise Figure: 2.2 dB
• Cellular / PCS / 3G
High P1dB Output Power: +22 dBm
• WiMAX, WiBro, & Fixed Wireless
High Output IP3: +40 dBm
• CATV & Cable Modem
Gain: 13 dB
9
• Microwave Radio
50 Ohm I/O’s - No External Matching
Amplifiers - Linear & Power - SMT
GaAs pHEMT High Linearity
Gain Block, 0.2 - 4.0 GHz
Functional Diagram
Industry Standard SOT89 Package
General Description
The HMC636ST89(E) is a GaAs pHEMT, High
Linearity, Low Noise, Wideband Gain Block Amplifier
covering 0.2 to 4.0 GHz. Packaged in an industry
standard SOT89, the amplifier can be used as either
a cascadable 50 Ohm gain stage, a PA Pre-Driver, a
Low Noise Amplifier, or a Gain Block with up to +23
dBm output power. This versatile Gain Block Amplifier
is powered from a single +5V supply and requires no
external matching components The internally matched
topology makes this amplifier compatible with virtually
any PCB material or thickness.
Electrical Specifications, Vs= 5.0 V, TA = +25° C
Parameter
Min
Frequency Range
Gain
Typ.
Max
Min.
0.2 - 2.0
10
Gain Variation Over Temperature
Input Return Loss
Max.
2.0 - 4.0
13
0.01
Typ.
5
0.02
10
GHz
10
0.01
Units
dB
0.02
dB/ °C
10
dB
Output Return Loss
13
15
dB
Reverse Isolation
22
20
dB
Output Power for 1 dB Compression (P1dB)
19
22
20
23
dBm
Output Third Order Intercept (IP3)
36
39
36
39
dBm
Noise Figure
2.5
2
Supply Current (Icq)
155
155
dB
175
mA
Note: Data taken with broadband bias tee on device output.
9-1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC636ST89 / 636ST89E
v02.0311
GaAs pHEMT High Linearity
Gain Block, 0.2 - 4.0 GHz
Gain vs. Temperature
20
16
15
14
10
12
S21
S11
S22
0
-5
10
8
6
-10
4
-15
2
-20
0
0
1
2
3
4
5
6
0
1
FREQUENCY (GHz)
2
3
4
FREQUENCY (GHz)
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
0
0
-5
-5
RETURN LOSS (dB)
RETURN LOSS (dB)
9
+25C
+85C
-40C
-10
+25C
+85C
-40C
-15
-20
+25C
+85C
-40C
-10
-15
-20
0
1
2
3
4
0
1
FREQUENCY (GHz)
2
3
4
3
4
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
Noise Figure vs. Temperature
0
10
8
NOISE FIGURE (dB)
REVERSE ISOLATION (dB)
9
+25C
+85C
-40C
-5
-10
-15
+25C
+85C
-40C
7
Amplifiers - Linear & Power - SMT
5
GAIN (dB)
RESPONSE (dB)
Broadband Gain & Return Loss
6
5
4
3
2
-20
1
0
-25
0
1
2
FREQUENCY (GHz)
3
4
0
1
2
FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
9-2
HMC636ST89 / 636ST89E
v02.0311
GaAs pHEMT High Linearity
Gain Block, 0.2 - 4.0 GHz
25
25
20
20
Psat (dBm)
30
15
10
+25C
+85C
-40C
5
0
0
0
1
2
3
4
0
1
2
FREQUENCY (GHz)
28
Pout (dBm), GAIN (dB), PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
32
24
20
16
12
8
4
0
Pout
Gain
PAE
-4
-16
-12
-8
-4
0
4
8
12
20
16
12
8
4
0
-4
-8
-20
16
Pout
Gain
PAE
24
-16
-12
45
35
30
0 dBm
+ 5 dBm
+10 dBm
20
FREQUENCY (GHz)
0
4
8
12
16
3
4
160
50
Is
140
120
40
100
30
Gain
P1dB
Psat
OIP3
80
60
40
20
20
0
10
4.5
4.75
5
5.25
5.5
Vs (Vdc)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
Is (mA)
IP3 (dBm)
40
2
-4
Gain, Power, Output IP3 & Supply Current
vs. Supply Voltage @ 850 MHz
Output IP3 vs. Input Tone Power
1
-8
INPUT POWER (dBm)
INPUT POWER (dBm)
0
4
Power Compression @ 2200 MHz
28
-8
-20
3
FREQUENCY (GHz)
Power Compression @ 850 MHz
25
9-3
15
10
+25C
+85C
-40C
5
Amplifiers - Linear & Power - SMT
Psat vs. Temperature
30
GAIN (dB), P1dB (dBm), Psat (dBm), IP3 (dBm)
9
P1dB (dBm)
P1dB vs. Temperature
HMC636ST89 / 636ST89E
v02.0311
GaAs pHEMT High Linearity
Gain Block, 0.2 - 4.0 GHz
Absolute Maximum Ratings
+5.5 Volts
RF Input Power (RFIN)(Vcc = +5 Vdc)
+16 dBm
Channel Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 13.3 mW/°C above 85 °C)
0.86 W
Thermal Resistance
(Channel to lead)
75.6 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
ESD Sensitivity (HBM)
Class 1A
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
9
Outline Drawing
NOTES:
1. PACKAGE BODY MATERIAL:
MOLDING COMPOUND MP-180S OR EQUIVALENT.
2. LEAD MATERIAL: Cu w/ Ag SPOT PLATING.
3. LEAD PLATING: 100% MATTE TIN.
4. DIMENSIONS ARE IN INCHES [MILLIMETERS]
5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
Amplifiers - Linear & Power - SMT
Collector Bias Voltage (Vcc)
Package Information
Part Number
Package Body Material
Lead Finish
MSL Rating
HMC636ST89
Low Stress Injection Molded Plastic
Sn/Pb Solder
MSL1
[1]
HMC636ST89E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
MSL1
[2]
Package Marking [3]
H636
XXXX
H636
XXXX
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
9-4
HMC636ST89 / 636ST89E
v02.0311
GaAs pHEMT High Linearity
Gain Block, 0.2 - 4.0 GHz
Pin Descriptions
Pin Number
Function
Description
1
RFIN
This pin is DC coupled. An off-chip
DC blocking capacitor is required.
3
RFOUT
RF Output and DC BIAS for the amplifier.
See Application Circuit for off-chip components.
2, 4
GND
These pins and package bottom must
be connected to RF/DC ground.
Amplifiers - Linear & Power - SMT
9
9-5
Interface Schematic
Application Circuit
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
HMC636ST89 / 636ST89E
v02.0311
GaAs pHEMT High Linearity
Gain Block, 0.2 - 4.0 GHz
Evaluation PCB
List of Materials for Evaluation PCB 119394
Item
Description
J1 - J2
PCB Mount SMA Connector
J3 - J4
DC Pin
C1 - C3
100 pF Capacitor, 0402 Pkg.
C4
1000 pF Capacitor, 0603 Pkg.
C5
2.2 µF Capacitor, Tantalum
L1
47 nH Inductor, 0603 Pkg.
U1
HMC636ST89(E)
PCB [2]
119392 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
[1]
The circuit board used in the final application
should use RF circuit design techniques. Signal
lines should have 50 Ohm impedance while the
package ground leads and package bottom should
be connected directly to the ground plane similar to
that shown. A sufficient number of via holes should
be used to connect the top and bottom ground
planes. The evaluation board should be mounted
to an appropriate heat sink. The evaluation circuit
board shown is available from Hittite upon request.
Amplifiers - Linear & Power - SMT
9
[2] Circuit Board Material: FR4
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
9-6