Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC455LP3 / 455LP3E v02.0605 LINEAR & POWER AMPLIFIERS - SMT 11 Typical Applications Features This amplifier is ideal for high linearity applications: Output IP3: +42 dBm • Multi-Carrier Systems Gain: 13 dB • GSM, GPRS & EDGE 56% PAE @ +28 dBm Pout • CDMA & WCDMA +19 dBm W-CDMA Channel Power @ -45 dBc ACP • PHS 3x3 mm QFN SMT Package Functional Diagram General Description The HMC455LP3 & HMC455LP3E are high output IP3 GaAs InGaP Heterojunction Bipolar Transistor (HBT) ½ watt MMIC amplifiers operating between 1.7 and 2.5 GHz. Utilizing a minimum number of external components the amplifier provides 13 dB of gain and +28 dBm of saturated power at 56% PAE from a single +5 Vdc supply voltage. The high output IP3 of +42 dBm coupled with the low VSWR of 1.4:1 make the HMC455LP3 & HMC455LP3E ideal driver amplifiers for PCS/3G wireless infrastructures. A low cost, leadless 3x3 mm QFN surface mount package (LP3) houses the linear amplifier. The LP3 provides an exposed base for excellent RF and thermal performance. Electrical Specifi cations, TA = +25° C, Vs= +5V Parameter Min. Frequency Range Gain Typ. Max. Min. 1.7 - 1.9 11.5 Gain Variation Over Temperature 13.5 0.012 Typ. Max. Min. 1.9 - 2.2 10.5 0.02 13 0.012 Typ. Max. 2.2 - 2.5 9 0.02 GHz 11.5 0.012 Units dB 0.02 dB / °C Input Return Loss 13 15 10 Output Return Loss 10 18 15 dB 23 26 dBm 27 dBm 37 40 dBm Output Power for 1dB Compression (P1dB) 24 Saturated Output Power (Psat) Output Third Order Intercept (IP3) Noise Figure Supply Current (Icq) 11 - 234 InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz 27 24.5 27.5 39 42 28.5 37 40 28 dB 7 6 6 dB 150 150 150 mA For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC455LP3 / 455LP3E v02.0605 InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz Broadband Gain & Return Loss Gain vs. Temperature 20 15 10 17 0 -5 -10 14 -15 +25C +85C -40C 8 -20 5 1.5 -25 1 1.5 2 2.5 3 1.6 1.7 1.8 Input Return Loss vs. Temperature 2 2.1 2.2 2.3 2.4 2.5 Output Return Loss vs. Temperature 0 0 +25C +85C -40C -5 RETURN LOSS (dB) +25C +85C -40C -5 RETURN LOSS (dB) 1.9 FREQUENCY (GHz) FREQUENCY (GHz) -10 -15 -20 -25 1.5 11 11 -10 -15 -20 -25 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 -30 1.5 2.5 1.6 1.7 1.8 FREQUENCY (GHz) 1.9 2 2.1 2.2 2.3 2.4 2.5 FREQUENCY (GHz) P1dB vs. Temperature Psat vs. Temperature 30 30 29 28 28 LINEAR & POWER AMPLIFIERS - SMT S21 S11 S22 GAIN (dB) RESPONSE (dB) 5 Psat (dBm) P1dB (dBm) 27 26 25 +25C 24 +85C -40C 23 26 +25C +85C -40C 24 22 22 21 20 1.7 1.8 1.9 2 2.1 2.2 FREQUENCY (GHz) 2.3 2.4 2.5 20 1.7 1.8 1.9 2 2.1 2.2 2.3 2.4 2.5 FREQUENCY (GHz) Data shown is tuned for 1.85 - 2.2 GHz, contact HMC Applications for recommended 1.7 - 1.85 GHz & 2.2 - 2.5 GHz tuning circuits. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 235 HMC455LP3 / 455LP3E v02.0605 InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz Output IP3 vs. Temperature Noise Figure vs. Temperature 44 10 9 42 NOISE FIGURE (dB) 8 11 IP3 (dBm) 40 38 36 +25C +85C 34 -40C 7 6 5 4 +25C 3 +85C 2 -40C 32 1.8 1.9 2 2.1 2.2 2.3 2.4 0 1.7 2.5 1.8 1.9 FREQUENCY (GHz) 2.2 2.3 2.4 50 Pout Gain PAE 40 30 20 10 0 -10 -5 0 5 10 15 50 Pout Gain PAE 40 30 20 10 0 -10 20 -5 0 INPUT POWER (dBm) +25C +85C -40C -15 -20 1.6 1.7 1.8 1.9 2 2.1 FREQUENCY (GHz) 2.2 2.3 2.4 2.5 Gain (dB), P1dB (dBm), Psat (dBm), IP3 (dBm) 0 -10 10 15 20 Gain, Power & IP3 vs. Supply Voltage @ 1.95 GHz Reverse Isolation vs. Temperature -5 5 INPUT POWER (dBm) -25 44 40 36 32 28 24 Gain P1dB Psat IP3 20 16 12 8 4.5 4.7 5 5.2 Vs (V) Data shown is tuned for 1.85 - 2.2 GHz, contact HMC Applications for recommended 1.7 - 1.85 GHz & 2.2 - 2.5 GHz tuning circuits. 11 - 236 2.5 60 Pout (dBm), GAIN (dB), PAE (%) Pout (dBm), GAIN (dB), PAE (%) 2.1 Power Compression @ 2.15 GHz 60 -30 1.5 2 FREQUENCY (GHz) Power Compression @ 1.95 GHz ISOLATION (dB) LINEAR & POWER AMPLIFIERS - SMT 1 30 1.7 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5.5 HMC455LP3 / 455LP3E v02.0605 InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz ACPR vs. Supply Voltage @ 1.96 GHz CDMA 2000, 9 Channels Forward ACPR vs. Supply Voltage @ 2.14 GHz W-CDMA, 64 DPCH -40 -30 -35 CDMA2000 Rev. 8 Frequency: 1.96 GHz Integration BW: 1.228 MHz Forward Link, SR1, 9 Channels -50 WCDMA Frequency : 2.14 GHz Integration BW: 3.84 MHz 64 DPCH -40 4.5V ACPR (dBc) ACPR (dBc) -45 5V 5.5V -55 -45 4.5V 5V 5.5V -50 11 -55 -60 Source ACPR -65 -65 5 7 9 11 13 15 17 19 21 5 Channel Output Power (dBm) 7 9 11 13 15 17 19 21 Channel Output Power (dBm) Absolute Maximum Ratings Collector Bias Voltage (Vcc) +6.0 Vdc RF Input Power (RFIN)(Vs = +5Vdc) +25 dBm Junction Temperature 150 °C Continuous Pdiss (T = 85 °C) (derate 16 mW/°C above 85 °C) 1.04 W Thermal Resistance (junction to ground paddle) 63 °C/W Storage Temperature -65 to +150 °C Operating Temperature -40 to +85 °C ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Application Circuit LINEAR & POWER AMPLIFIERS - SMT -60 Source ACPR Recommended Component Values TL1 TL2 TL3 TL4 L1 8.2 nH 50 Ohm 50 Ohm 50 Ohm 50 Ohm C1 2.2 µF Physical Length 0.33” 0.18” 0.13” 0.04” C2, C3 3.0 pF Electrical Length 34° 19° 13.5° 4° C4 0.9 pF C5 100 pF Impedance PCB Material: 10 mil Rogers 4350, Er = 3.48 Data shown is tuned for 1.85 - 2.2 GHz, contact HMC Applications for recommended 1.7 - 1.85 GHz & 2.2 - 2.5 GHz tuning circuits. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 237 HMC455LP3 / 455LP3E v02.0605 InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz Outline Drawing LINEAR & POWER AMPLIFIERS - SMT 11 11 - 238 NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number Package Body Material Lead Finish MSL Rating HMC455LP3 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 HMC455LP3E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 Package Marking [3] [1] 455 XXXX [2] 455 XXXX [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX Pin Descriptions Pin Number Function Description 1, 2, 4 - 9, 11 - 16 N/C This pin may be connected to RF ground. 3 RFIN This pin is AC coupled. An off chip series matching capacitor is required. 10 RFOUT RF output and DC Bias for the output stage. GND Package bottom must be connected to RF/DC ground. Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC455LP3 / 455LP3E v02.0605 InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz Evaluation PCB J3 Pin Number Description 1, 2, 3 GND 4, 5, 6 Vs List of Materials for Evaluation PCB 106058 [1] Item Description J1 - J2 PCB Mount SMA Connector J3 2 mm DC Header C1 2.2 μF Capacitor, Tantalum C2, C3 3.0 pF Capacitor, 0402 Pkg. C4 0.9 pF Capacitor, 0402 Pkg. C5 100 pF Capacitor, 0402 Pkg. L1 8.2 nH Inductor, 0402 Pkg. U1 HMC455LP3 / HMC455LP3E Power Amplifier PCB [2] 106492 Evaluation PCB, 10 mils The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request. LINEAR & POWER AMPLIFIERS - SMT 11 [1] Reference this number when ordering complete evalution PCB [2] Circuit Board Material: Rogers 4350, Er = 3.48 Data shown is tuned for 1.85 - 2.2 GHz, contact HMC Applications for recommended 1.7 - 1.85 GHz & 2.2 - 2.5 GHz tuning circuits. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 11 - 239