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HMC453QS16G / 453QS16GE
v01.0205
11
InGaP HBT 1.6 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
Typical Applications
Features
The HMC453QS16G / HMC453QS16GE is ideal for
applications requiring a high dynamic range amplifier:
Output IP3: +51 dBm
• GSM, GPRS & EDGE
8 dB Gain @ 2100 MHz
• CDMA & W-CDMA
45% PAE @ +32 dBm Pout
• CATV/Cable Modem
+25 dBm CDMA2000 Channel Power@ -45 dBc ACP
• Fixed Wireless & WLL
Single +5V Supply
21.5 dB Gain @ 400 MHz
LINEAR & POWER AMPLIFIERS - SMT
Integrated Power Control (VPD)
QSOP16G SMT Package: 29.4 mm2
General Description
Functional Diagram
The HMC453QS16G & HMC453QS16GE are high
dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1.6 watt MMIC power amplifiers
operating between 0.4 and 2.2 GHz. Packaged in a
miniature 16 lead QSOP plastic package, the amplifier gain is typically 21.5 dB at 0.4 GHz and 8 dB
at 2.1 GHz. Utilizing a minimum number of external
components and a single +5V supply, the amplifier
output IP3 can be optimized to +47 dBm at 0.4 GHz
or +51 dBm at 2.1 GHz. The power control (VPD)
can be used for full power down or RF output power/
current control. The high output IP3 and PAE
make the HMC453QS16G(E) ideal power amplifiers
for Cellular/PCS/3G, WLL, ISM and Fixed Wireless
applications.
Electrical Specifi cations, TA = +25°C, Vs= +5V, VPD = +5V [1]
Parameter
Min.
Frequency Range
Gain
Typ.
Max.
Min.
400 - 410
19
Gain Variation Over
Temperature
21.5
0.012
Typ.
Max.
Min.
450 - 496
18
0.02
20.5
0.012
Typ.
Max.
Min.
810 - 960
12
0.02
15
0.012
Typ.
Max.
Min.
1710 - 1990
6
0.02
9
0.012
6
0.02
Typ.
Max.
Units
2010 - 2170
MHz
8
dB
0.012
0.02
dB /
°C
Input Return Loss
12
15
12
10
15
dB
Output Return Loss
10
10
15
13
18
dB
33
dBm
33.5
dBm
51
dBm
dB
Output Power for 1dB
Compression (P1dB)
29
Saturated Output
Power (Psat)
Output Third Order
Intercept (IP3) [2]
Noise Figure
32
29
32.25
44
47
32
29
32.25
47
50
32
28.5
32.5
46
49
31.5
30
32
44
50
48
7
8.5
7
7.5
6.5
Supply Current (Icq)
725
725
725
725
725
mA
Control Current (IPD)
12
12
12
12
12
mA
[1] Specifications and data reflect HMC453QS16G measured using the respective application circuits for each designated frequency band found
herein. Contact the HMC Applications Group for assistance in optimizing performance for your application.
[2] Two-tone input power of -10 dBm per tone, 1 MHz spacing.
11 - 178
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC453QS16G / 453QS16GE
v01.0205
InGaP HBT 1.6 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
Broadband Gain
& Return Loss @ 400 MHz
Gain vs. Temperature @ 400 MHz
24
25
23
20
22
21
20
10
GAIN (dB)
S21
S11
S22
5
0
-5
18
+25 C
17
+85 C
16
-40 C
14
13
0.2
0.3
0.4
0.5
0.6
12
0.35
0.7
0.37
0.39
0.41
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss
vs. Temperature @ 400 MHz
Output Return Loss
vs. Temperature @ 400 MHz
RETURN LOSS (dB)
RETURN LOSS (dB)
+25 C
+85 C
-40 C
-5
-10
0.37
0.39
0.41
0.43
0.43
0.45
-10
+25 C
+85 C
-40 C
-15
-20
0.35
0.45
0.37
33
32
32
31
31
Psat (dBm)
34
33
30
+25 C
28
+85 C
-40 C
27
30
29
26
25
0.41
FREQUENCY (GHz)
+85 C
-40 C
27
25
0.39
+25 C
28
26
0.37
0.41
Psat vs. Temperature @ 400 MHz
34
29
0.39
FREQUENCY (GHz)
P1dB vs. Temperature @ 400 MHz
P1dB (dBm)
0.45
-5
FREQUENCY (GHz)
24
0.35
0.43
0
0
-15
0.35
11
15
-10
-15
0.1
19
0.43
0.45
LINEAR & POWER AMPLIFIERS - SMT
RESPONSE (dB)
15
24
0.35
0.37
0.39
0.41
0.43
0.45
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 179
HMC453QS16G / 453QS16GE
v01.0205
InGaP HBT 1.6 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
Output IP3 vs. Temperature @ 400 MHz
10
50
9
48
8
NOISE FIGURE (dB)
52
44
42
40
+25 C
38
+85 C
-40 C
36
6
5
1
0.39
0.41
0.43
-40 C
3
32
0.37
+25 C
+85 C
4
34
0
0.35
0.45
0.37
0.39
FREQUENCY (GHz)
+25 C
+85 C
-40 C
-20
-25
-30
-35
0.35
0.37
0.39
0.41
0.43
0.45
GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm)
ISOLATION (dB)
-5
-15
0.43
0.45
Gain, Power & IP3
vs. Supply Voltage @ 400 MHz
0
-10
0.41
FREQUENCY (GHz)
Reverse Isolation
vs. Temperature @ 400 MHz
55
50
45
Gain
P1dB
Psat
OIP3
40
35
30
25
20
15
10
4.5
4.75
5
FREQUENCY (GHz)
5.25
5.5
Vs (Vdc)
ACPR vs. Supply Voltage @ 400 MHz
W-CDMA, 64 DPCH
Power Compression @ 400 MHz
-10
50
-15
45
Pout
Gain
PAE
40
W-CDMA
Frequency: 400 MHz
Integration BW: 3.84 MHz
64 DPCH
-25
ACPR (dBc)
35
-20
30
25
20
-30
-35
-40
4.5V
-45
5V
5.5V
-50
15
-55
10
-60
5
-65
0
-10
-70
-8
-6
-4
-2
0
2
4
6
INPUT POWER (dBm)
11 - 180
7
2
30
0.35
Pout (dBm), Gain (dB), PAE (%)
LINEAR & POWER AMPLIFIERS - SMT
OIP3 (dBm)
46
11
Noise Figure
vs. Temperature @ 400 MHz
8
10
12
14
Source ACPR
8
10
12
14
16
18
20
22
24
Channel Power (dBm)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
26
28
HMC453QS16G / 453QS16GE
v01.0205
InGaP HBT 1.6 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
Broadband Gain
& Return Loss @ 470 MHz
Gain vs. Temperature @ 470 MHz
23
25
22
20
21
20
10
GAIN (dB)
S21
S11
S22
5
0
19
18
17
+85C
-40C
15
-5
11
+25C
16
14
-10
-15
0.1
13
0.2
0.3
0.4
0.5
0.6
12
0.43
0.7
0.45
FREQUENCY (GHz)
0.47
0.49
0.51
0.53
0.51
0.53
FREQUENCY (GHz)
Input Return Loss
vs. Temperature @ 40 MHz
Output Return Loss
vs. Temperature @ 470 MHz
0
0
RETURN LOSS (dB)
RETURN LOSS (dB)
-2
+25C
+85C
-40C
-5
-10
-15
-4
+25C
+85C
-40C
-6
-8
-10
-12
-20
0.43
0.45
0.47
0.49
0.51
-14
0.43
0.53
0.45
FREQUENCY (GHz)
34
34
33
33
32
32
31
31
30
+25C
28
+85C
-40C
27
30
29
26
25
0.47
0.49
FREQUENCY (GHz)
+85C
-40C
27
25
0.45
+25C
28
26
24
0.43
0.49
Psat vs. Temperature @ 470 MHz
Psat (dBm)
P1dB (dBm)
P1dB vs. Temperature @ 470 MHz
29
0.47
FREQUENCY (GHz)
0.51
0.53
LINEAR & POWER AMPLIFIERS - SMT
RESPONSE (dB)
15
24
0.43
0.45
0.47
0.49
0.51
0.53
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 181
HMC453QS16G / 453QS16GE
v01.0205
InGaP HBT 1.6 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
Output IP3 vs. Temperature @ 470 MHz
10
56
9
54
8
NOISE FIGURE (dB)
58
OIP3 (dBm)
52
11
Noise Figure
vs. Temperature @ 470 MHz
50
48
46
44
+25C
42
+85C
40
-40C
5
+25C
+85C
4
-40C
3
1
36
0.43
0.45
0.47
0.49
0.51
0
0.43
0.53
0.45
0.47
FREQUENCY (GHz)
+25C
+85C
-40C
-20
-25
-30
0.43
0.45
0.47
0.49
0.51
0.53
GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm)
ISOLATION (dB)
-5
-15
0.53
55
50
45
Gain
P1dB
Psat
OIP3
40
35
30
25
20
15
10
4.5
4.75
5
5.25
5.5
Vs (Vdc)
FREQUENCY (GHz)
ACPR vs. Supply Voltage @ 470 MHz
W-CDMA, 64 DPCH
Power Compression @ 470 MHz
-10
55
50
-15
Pout
Gain
PAE
45
40
-20
W-CDMA
Frequency: 470 MHz
Integration BW: 3.84 MHz
64 DPCH
-25
ACPR (dBc)
35
30
25
20
-30
-35
-40
4.5V
5V
-45
5.5V
-50
15
-55
10
-60
5
-65
0
-10
0.51
Gain, Power & IP3
vs. Supply Voltage @ 470 MHz
0
-10
0.49
FREQUENCY (GHz)
Reverse Isolation
vs. Temperature @ 470 MHz
Pout (dBm), Gain (dB), PAE (%)
LINEAR & POWER AMPLIFIERS - SMT
6
2
38
Source ACPR
-70
-8
-6
-4
-2
0
2
4
6
INPUT POWER (dBm)
11 - 182
7
8
10
12
14
8
10
12
14
16
18
20
22
24
Channel Power (dBm)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
26
28
HMC453QS16G / 453QS16GE
v01.0205
InGaP HBT 1.6 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
Broadband Gain
& Return Loss @ 900 MHz
Gain vs. Temperature @ 900 MHz
20
18
17
15
15
5
GAIN (dB)
S21
S11
0
S22
-5
-10
-15
0.4
14
13
12
+85 C
10
-40 C
9
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
8
0.7
1.4
0.75
0.8
0.85
0.9
0.95
FREQUENCY (GHz)
FREQUENCY (GHz)
Input Return Loss
vs. Temperature @ 900 MHz
Output Return Loss
vs. Temperature @ 900 MHz
1
1.05
1.1
1
1.05
1.1
1.05
1.1
0
0
+25 C
+85 C
-40 C
RETURN LOSS (dB)
-5
RETURN LOSS (dB)
11
+25 C
11
+25 C
+85 C
-40 C
-5
-10
-10
-15
-20
-15
0.7
0.75
0.8
0.85
0.9
0.95
1
1.05
-25
0.7
1.1
0.75
0.8
FREQUENCY (GHz)
34
34
33
33
32
32
31
31
30
+25 C
28
+85 C
-40 C
27
29
25
0.85
0.9
0.95
FREQUENCY (GHz)
+85 C
-40 C
27
26
0.8
+25 C
28
25
0.75
0.95
30
26
24
0.7
0.9
Psat vs. Temperature @ 900 MHz
Psat (dBm)
P1dB (dBm)
P1dB vs. Temperature @ 900 MHz
29
0.85
FREQUENCY (GHz)
1
1.05
1.1
LINEAR & POWER AMPLIFIERS - SMT
RESPONSE (dB)
16
10
24
0.7
0.75
0.8
0.85
0.9
0.95
1
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 183
HMC453QS16G / 453QS16GE
v01.0205
InGaP HBT 1.6 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
Output IP3 vs. Temperature @ 900 MHz
10
52
9
50
8
NOISE FIGURE (dB)
54
46
44
+25 C
+85 C
42
-40 C
40
7
6
5
36
1
0.85
0.9
0.95
-40 C
3
2
0.8
+25 C
+85 C
4
38
34
0.75
0
0.7
1
0.75
0.8
FREQUENCY (GHz)
+25 C
+85 C
-40 C
-20
-25
-30
0.7
0.75
0.8
0.85
0.9
0.95
1
1.05
1.1
GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm)
ISOLATION (dB)
-5
-15
0.95
1
1.05
50
45
40
35
30
Gain
P1dB
Psat
OIP3
25
20
15
10
4.5
4.75
5
5.25
5.5
Vs (Vdc)
Gain, Power & IP3
vs. Supply Current @ 900 MHz*
ACPR vs. Supply Voltage @ 910 MHz
CDMA IS95, 9 Channels Forward
-25
50
-30
45
-35
40
-40
ACPR (dBc)
55
35
30
Gain
P1dB
Psat
OIP3
25
20
CDMA IS95
Frequency: 910 MHz
Integration BW: 1.228 MHz
Forward Link, 9 Channels
-45
4.5V
-50
5.5V
5V
-55
-60
15
-65
Source ACPR
520
560
600
640
Icq (mA)
680
720
760
800
-70
12
14
16
18
20
22
24
26
Channel Power (dBm)
* Icq is controlled by varying VPD.
11 - 184
1.1
55
FREQUENCY (GHz)
10
480
0.9
Gain, Power & IP3
vs. Supply Voltage @ 900 MHz
0
-10
0.85
FREQUENCY (GHz)
Reverse Isolation
vs. Temperature @ 900 MHz
GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm)
LINEAR & POWER AMPLIFIERS - SMT
OIP3 (dBm)
48
11
Noise Figure vs. Temperature @ 900 MHz
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
28
30
HMC453QS16G / 453QS16GE
v01.0205
InGaP HBT 1.6 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
Broadband Gain
& Return Loss @ 1900 MHz
Gain vs. Temperature @ 1900 MHz
12
15
11
10
10
S21
0
S11
S22
8
GAIN (dB)
RESPONSE (dB)
9
5
-5
7
6
4
+25 C
+85 C
-40 C
3
-10
11
5
2
1.4
1.6
1.8
2
0
1.7
2.2
1.8
FREQUENCY (GHz)
RETURN LOSS (dB)
RETURN LOSS (dB)
+25 C
+85 C
-40 C
-5
-10
1.8
1.9
2
2
2.1
-10
-15
-20
1.7
2.1
+25 C
+85 C
-40 C
-5
1.8
FREQUENCY (GHz)
Psat vs. Temperature @ 1900 MHz
34
33
33
32
32
31
31
Psat (dBm)
34
30
29
+25 C
28
+85 C
-40 C
27
30
29
27
26
25
25
1.9
FREQUENCY (GHz)
+25 C
+85 C
-40 C
28
26
1.8
1.9
FREQUENCY (GHz)
P1dB vs. Temperature @ 1900 MHz
P1dB (dBm)
2.1
0
0
24
1.7
2
Output Return Loss
vs. Temperature @ 1900 MHz
Input Return Loss
vs. Temperature @ 1900 MHz
-15
1.7
1.9
FREQUENCY (GHz)
LINEAR & POWER AMPLIFIERS - SMT
1
-15
1.2
2
2.1
24
1.7
1.8
1.9
2
2.1
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 185
HMC453QS16G / 453QS16GE
v01.0205
InGaP HBT 1.6 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
Output IP3 vs. Temperature @ 1900 MHz
10
50
9
48
8
NOISE FIGURE (dB)
52
44
42
40
+25 C
38
+85 C
-40 C
36
7
6
5
32
1
1.8
1.9
2
-40 C
3
34
1.7
+25 C
+85 C
4
2
30
0
1.7
2.1
1.8
FREQUENCY (GHz)
+25 C
+85 C
-40 C
-15
1.8
1.9
2
2.1
GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm)
ISOLATION (dB)
-5
-20
1.7
2.1
55
50
45
40
35
30
25
Gain
P1dB
Psat
OIP3
20
15
10
5
4.5
4.75
FREQUENCY (GHz)
5
5.25
ACPR vs. Supply Voltage @ 1960 MHz
CDMA 2000, 9 Channels Forward
55
-30
50
-35
45
CDMA2000
Frequency: 1.96 GHz
Integration BW: 1.228 MHz
Forward Link, SR1, 9 Channels
-40
ACPR (dBc)
40
35
30
25
Gain
P1dB
Psat
OIP3
20
15
-45
5V
4.5V
-50
5.5V
-55
-60
-65
10
Source ACPR
-70
520
560
600
640
Icq (mA)
680
720
760
800
14
16
18
20
22
24
Channel Power (dBm)
* Icq is controlled by varying VPD.
11 - 186
5.5
Vs (Vdc)
Gain, Power & IP3
vs. Supply Current @ 1900 MHz*
5
480
2
Gain, Power & IP3
vs. Supply Voltage @ 1900 MHz
0
-10
1.9
FREQUENCY (GHz)
Reverse Isolation
vs. Temperature @ 1900 MHz
GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm)
LINEAR & POWER AMPLIFIERS - SMT
OIP3 (dBm)
46
11
Noise Figure
vs. Temperature @ 1900 MHz
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
26
28
HMC453QS16G / 453QS16GE
v01.0205
InGaP HBT 1.6 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
Broadband Gain
& Return Loss @ 2100 MHz
Gain vs. Temperature @ 2100 MHz
10
10
9
8
7
0
GAIN (dB)
RESPONSE (dB)
5
-5
-10
5
11
+25 C
+85 C
4
-40 C
3
S21
S11
S22
-15
6
2
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
0
1.9
3
2
FREQUENCY (GHz)
Input Return Loss
vs. Temperature @ 2100 MHz
+25 C
+85 C
-40 C
RETURN LOSS (dB)
RETURN LOSS (dB)
-5
-10
-15
-20
2.2
2.3
+25 C
+85 C
-40 C
-10
-15
-20
2
2.1
2.2
-25
1.9
2.3
2
FREQUENCY (GHz)
Psat vs. Temperature @ 2100 MHz
36
36
34
34
32
32
Psat (dBm)
30
28
+25 C
+85 C
-40 C
26
30
28
24
22
22
2.1
FREQUENCY (GHz)
2.2
2.3
+25 C
+85 C
-40 C
26
24
2
2.1
FREQUENCY (GHz)
P1dB vs. Temperature @ 2100 MHz
P1dB (dBm)
2.3
0
-5
20
1.9
2.2
Output Return Loss
vs. Temperature @ 2100 MHz
0
-25
1.9
2.1
FREQUENCY (GHz)
LINEAR & POWER AMPLIFIERS - SMT
1
-20
20
1.9
2
2.1
2.2
2.3
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 187
HMC453QS16G / 453QS16GE
v01.0205
InGaP HBT 1.6 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
Output IP3 vs. Temperature @ 2100 MHz
Noise Figure
vs. Temperature @ 2100 MHz
60
10
9
8
NOISE FIGURE (dB)
11
OIP3 (dBm)
55
50
45
+25 C
40
+85 C
-40 C
35
7
6
5
4
+25 C
3
+85 C
2
-40 C
2
2.1
2.2
2
2.1
ISOLATION (dB)
-5
+25 C
+85 C
-40 C
-15
2
2.1
2.2
2.3
GAIN (dB), P1dB (dBm), Psat (dBm), OIP3 (dBm)
0
-20
1.9
2.3
Gain, Power & IP3
vs. Supply Voltage @ 2100 MHz
Reverse Isolation
vs. Temperature @ 2100 MHz
-10
2.2
FREQUENCY (GHz)
60
50
40
30
Gain
P1dB
Psat
OIP3
20
10
0
4.5
4.75
5
FREQUENCY (GHz)
5.25
5.5
Vs (Vdc)
ACPR vs. Supply Voltage @ 2140 MHz
W-CDMA, 64 DPCH
Power Compression @ 2100 MHz
50
-20
45
Pout
Gain
PAE
40
35
-25
ACPR (dBc)
30
25
20
15
-35
5V
-40
5.5V
-45
-50
10
0
10
4.5V
W-CDMA
Frequency: 2.14 GHz
Integration BW: 3.84 MHz
64 DPCH
-30
-55
5
-60
12
14
16
18
20
22
INPUT POWER (dBm)
11 - 188
0
1.9
2.3
FREQUENCY (GHz)
Pout (dBm), Gain (dB), PAE (%)
LINEAR & POWER AMPLIFIERS - SMT
1
30
1.9
24
26
28
Source ACPR
-65
12
14
16
18
20
22
24
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
26
28
HMC453QS16G / 453QS16GE
v01.0205
InGaP HBT 1.6 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
Power Dissipation
Absolute Maximum Ratings
4
Max Pdiss @ +85C
3.5
1900 MHz
3
2.5
2
900 MHz
1.5
Collector Bias Voltage (Vcc)
+6.0 Vdc
Control Voltage (Vpd)
+5.4 Vdc
RF Input Power (RFIN)(Vs = Vpd = +5Vdc)
+32 dBm
Junction Temperature
150 °C
Continuous Pdiss (T = 85 °C)
(derate 58.5 mW/°C above 85 °C)
3.8 W
Thermal Resistance
(junction to ground paddle)
17.1 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
1
0
5
10
15
20
25
INPUT POWER (dBm)
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
NOTES:
1. LEADFRAME MATERIAL: COPPER ALLOY
2. DIMENSIONS ARE IN INCHES [MILLIMETERS]
3. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE.
11
LINEAR & POWER AMPLIFIERS - SMT
POWER DISSIPATION (W)
4.5
4. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE.
5. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO
PCB RF GROUND.
Package Information
Part Number
Package Body Material
Lead Finish
MSL Rating
HMC453QS16G
Low Stress Injection Molded Plastic
Sn/Pb Solder
MSL1
HMC453QS16GE
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
MSL1
Package Marking [3]
[1]
H453
XXXX
[2]
H453
XXXX
[1] Max peak reflow temperature of 235 °C
[2] Max peak reflow temperature of 260 °C
[3] 4-Digit lot number XXXX
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 189
HMC453QS16G / 453QS16GE
v01.0205
InGaP HBT 1.6 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
Pin Descriptions
LINEAR & POWER AMPLIFIERS - SMT
11
Pin Number
Function
Description
Interface Schematic
1, 2, 4, 5,
7-10, 13-16
GND
These pins & package bottom must be connected to
RF/DC ground.
3
VPD
Power control pin. For maximum power, this pin should be
connected to 5V. A higher voltage is not recommended. For
lower idle current, this voltage can be reduced.
6
RFIN
This pin is DC coupled.
Off chip matching components are required.
See Application Circuit herein.
11, 12
RFOUT
RF output and DC Bias input for the output amplifier stage.
Off chip matching components are required.
See Application Circuit herein.
400 MHz Application Circuit
This circuit was used to specify the performance for 400-410 MHz operation. Contact the HMC Applications
Group for assistance in optimizing performance for your application.
Recommended Component Values
Impedance
12 pF
8.2 pF
C3
6.8 pF
C4, C7
100 pF
C6
39 pF
TL1
TL2
TL3
TL4
TL5
TL6
C8, C9
2.2 μF
L1
47 nH
50 Ohm
50 Ohm
50 Ohm
50 Ohm
50 Ohm
50 Ohm
Physical Length
0.22”
0.04”
0.04”
0.16”
0.04”
0.05”
L2
40 nH
Electrical Length
5°
1°
1°
4°
1°
1°
L3, L4
4.3 nH
R1
5.1 Ohm
PCB Material: 10 mil Rogers 4350, Er = 3.48
11 - 190
C1, C5
C2, C10
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC453QS16G / 453QS16GE
v01.0205
InGaP HBT 1.6 WATT POWER
AMPLIFIER, 0.4 - 2.2 GHz
400 MHz Evaluation PCB
List of Materials for Evaluation PCB 110865-400 [1]
Item
Description
J1 - J2
PCB Mount SMA Connector
J3
2 mm DC Header
C1, C5
12 pF Capacitor, 0402 Pkg.
C2, C10
8.2 pF Capacitor, 0402 Pkg.
C3
6.8 pF Capacitor, 0402 Pkg.
C4, C7
100 pF Capacitor, 0402 Pkg.
C6
39 pF Capacitor, 0402 Pkg.
C8, C9
2.2 μF Capacitor, Tantalum
L1
47 nH Inductor, 0603 Pkg.
L2
40 nH Inductor, 0402 Pkg.
L3, L4
4.3 nH Inductor, 0402 Pkg.
R1
5.1 Ohm Resistor, 0402 Pkg.
U1
HMC453QS16G / HMC453QS16GE
Linear Amp
PCB [2]
110863 Evaluation PCB, 10 mils
The circuit board used in this application should use
RF circuit design techniques. Signal lines should
have 50 ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of VIA holes should be used
to connect the top and bottom ground planes. The
evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is
available from Hittite upon request.
LINEAR & POWER AMPLIFIERS - SMT
11
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350, Er = 3.48
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 191
HMC453QS16G / 453QS16GE
v01.0205
InGaP HBT 1.6 WATT POWER
AMPLIFIER, 0.2 - 2.4 GHz
470 MHz Application Circuit
This circuit was used to specify the performance for 450-496 MHz operation. Contact the HMC Applications
Group for assistance in optimizing performance for your application.
LINEAR & POWER AMPLIFIERS - SMT
11
11 - 192
Recommended Component Values
C1
12 pF
C2
8.2 pF
C3
6.8 pF
C4, C7
100 pF
C5
10 pF
C6
39 pF
C8, C9
2.2 μF
C10
5.6 pF
TL1
TL2
TL3
TL4
TL5
TL6
50 Ohm
50 Ohm
50 Ohm
50 Ohm
50 Ohm
50 Ohm
L1
47 nH
Physical Length
0.22”
0.04”
0.04”
0.16”
0.04”
0.05”
L2
40 nH
Electrical Length
6°
1°
1°
4°
1°
1°
L3, L4
4.3 nH
R1
5.1 Ohm
Impedance
PCB Material: 10 mil Rogers 4350, Er = 3.48
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC453QS16G / 453QS16GE
v01.0205
InGaP HBT 1.6 WATT POWER
AMPLIFIER, 0.2 - 2.4 GHz
470 MHz Evaluation PCB
List of Materials for Evaluation PCB 110976-470 [1]
Item
Description
J1 - J2
PCB Mount SMA Connector
J3
2 mm DC Header
C1
12 pF Capacitor, 0402 Pkg.
C2
8.2 pF Capacitor, 0402 Pkg.
C3
6.8 pF Capacitor, 0402 Pkg.
C4, C7
100 pF Capacitor, 0402 Pkg.
C5
10 pF Capacitor, 0402 Pkg.
C6
39 pF Capacitor, 0402 Pkg.
C8, C9
2.2 μF Capacitor, Tantalum
C10
5.6 pF Capacitor, 0402 Pkg.
L1
47 nH Inductor, 0603 Pkg.
L2
40 nH Inductor, 0402 Pkg.
L3, L4
4.3 nH Inductor, 0402 Pkg.
R1
5.1 Ohm Resistor, 0402 Pkg.
U1
HMC453QS16G / HMC453QS16GE
Linear Amp
PCB [2]
110863 Evaluation PCB, 10 mils
The circuit board used in this application should use
RF circuit design techniques. Signal lines should
have 50 ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used to
connect the top and bottom ground planes. The
evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is
available from Hittite upon request.
LINEAR & POWER AMPLIFIERS - SMT
11
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350, Er = 3.48
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 193
HMC453QS16G / 453QS16GE
v01.0205
InGaP HBT 1.6 WATT POWER
AMPLIFIER, 0.2 - 2.4 GHz
900 MHz Application Circuit
This circuit was used to specify the performance for 810-960 MHz operation. Contact the HMC Applications
Group for assistance in optimizing performance for your application.
LINEAR & POWER AMPLIFIERS - SMT
11
11 - 194
Impedance
TL1
TL2
TL3
TL4
Recommended Component Values
50 Ohm
50 Ohm
50 Ohm
50 Ohm
C1
5 pF
Physical Length
0.26”
0.08”
0.12”
0.15”
C2, C3
3.3 pF
Electrical Length
14°
4°
6°
8°
C4, C7
100 pF
C5
8.2 pF
PCB Material: 10 mil Rogers 4350, Er = 3.48
C6
56 pF
C8, C9
2.2 μF
C10
1 pF
L1
30 nH
L2
20 nH
R1
5.6 Ohm
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC453QS16G / 453QS16GE
v01.0205
InGaP HBT 1.6 WATT POWER
AMPLIFIER, 0.2 - 2.4 GHz
900 MHz Evaluation PCB
List of Materials for Evaluation PCB 108709-900 [1]
Item
Description
J1 - J2
PCB Mount SMA Connector
J3
2 mm DC Header
C1
5.0 pF Capacitor, 0402 Pkg.
C2, C3
3.3 pF Capacitor, 0402 Pkg.
C4, C7
100 pF Capacitor, 0402 Pkg.
C5
8.2 pF Capacitor, 0402 Pkg.
C6
56 pF Capacitor, 0402 Pkg.
C8, C9
2.2 μF Capacitor, Tantalum
C10
1.0 pF Capacitor, 0402 Pkg.
L1
30 nH Inductor, 0402 Pkg.
L2
20 nH Inductor, 0402 Pkg.
R1
5.6 Ohm Resistor, 0402 Pkg.
U1
HMC453QS16G / HMC453QS16GE
Linear Amp
PCB [2]
108707 Evaluation PCB, 10 mils
The circuit board used in this application should use
RF circuit design techniques. Signal lines should
have 50 ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used to
connect the top and bottom ground planes. The
evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is
available from Hittite upon request.
LINEAR & POWER AMPLIFIERS - SMT
11
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350, Er = 3.48
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 195
HMC453QS16G / 453QS16GE
v01.0205
InGaP HBT 1.6 WATT POWER
AMPLIFIER, 0.2 - 2.4 GHz
1900 MHz Application Circuit
This circuit was used to specify the performance for 1710-1990 MHz operation. Contact the HMC Applications
Group for assistance in optimizing performance for your application.
LINEAR & POWER AMPLIFIERS - SMT
11
11 - 196
Impedance
TL1
TL2
Recommended Component Values
50 Ohm
50 Ohm
C1
Physical Length
0.04”
0.04”
C2
1.2 pF
Electrical Length
4°
4°
C3, C6
100 pF
C4
4.7 pF
PCB Material: 10 mil Rogers 4350, Er = 3.48
0.8 pF
C5
15 pF
C7, C8
2.2 μF
L1
18 nH
L2
20 nH
R1
5.6 Ohms
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC453QS16G / 453QS16GE
v01.0205
InGaP HBT 1.6 WATT POWER
AMPLIFIER, 0.2 - 2.4 GHz
1900 MHz Evaluation PCB
List of Materials for Evaluation PCB 108721-1900 [1]
Item
Description
J1 - J2
PCB Mount SMA Connector
J3
2 mm DC Header
C1
0.8 pF Capacitor, 0402 Pkg.
C2
1.2 pF Capacitor, 0402 Pkg.
C3, C6
100 pF Capacitor, 0402 Pkg.
C4
4.7 pF Capacitor, 0402 Pkg.
C5
15 pF Capacitor, 0402 Pkg.
C7, C8
2.2 μF Capacitor, Tantalum
L1
18 nH Inductor, 0402 Pkg.
L2
20 nH Inductor, 0402 Pkg.
R1
5.6 Ohm Resistor, 0402 Pkg.
U1
HMC453QS16G / HMC453QS16GE
Linear Amp
PCB [2]
108719 Evaluation PCB, 10 mils
The circuit board used in this application should use
RF circuit design techniques. Signal lines should
have 50 ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used to
connect the top and bottom ground planes. The
evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is
available from Hittite upon request.
LINEAR & POWER AMPLIFIERS - SMT
11
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350, Er = 3.48
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 197
HMC453QS16G / 453QS16GE
v01.0205
InGaP HBT 1.6 WATT POWER
AMPLIFIER, 0.2 - 2.4 GHz
2100 MHz Application Circuit
This circuit was used to specify the performance for 2100-2170 MHz operation. Contact the HMC
Applications Group for assistance in optimizing performance for your application.
LINEAR & POWER AMPLIFIERS - SMT
11
11 - 198
TL1
TL2
50 Ohm
50 Ohm
C1
0.8 pF
Physical Length
0.04”
0.04”
C2
1 pF
Electrical Length
5°
5°
C3, C6
100 pF
C4
3.9 pF
Impedance
PCB Material: 10 mil Rogers 4350, Er = 3.48
Recommended Component Values
C5
15 pF
C7, C8
2.2 μF
L1
12 nH
L2
20 nH
R1
5.1 Ohm
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC453QS16G / 453QS16GE
v01.0205
InGaP HBT 1.6 WATT POWER
AMPLIFIER, 0.2 - 2.4 GHz
2100 MHz Evaluation PCB
List of Materials for Evaluation PCB 109994-2100 [1]
Item
Description
J1 - J2
PCB Mount SMA Connector
J3
2 mm DC Header
C1
0.8 pF Capacitor, 0402 Pkg.
C2
1.0 pF Capacitor, 0402 Pkg.
C3, C6
100 pF Capacitor, 0402 Pkg.
C4
3.9 pF Capacitor, 0402 Pkg.
C5
15 pF Capacitor, 0402 Pkg.
C7, C8
2.2 μF Capacitor, Tantalum
L1
12 nH Inductor, 0402 Pkg.
L2
20 nH Inductor, 0402 Pkg.
R1
5.1 Ohm Resistor, 0402 Pkg.
U1
HMC453QS16G / HMC453QS16GE
Linear Amp
PCB [2]
108719 Evaluation PCB, 10 mils
The circuit board used in this application should use
RF circuit design techniques. Signal lines should
have 50 ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown.
A sufficient number of via holes should be used to
connect the top and bottom ground planes. The
evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is
available from Hittite upon request.
LINEAR & POWER AMPLIFIERS - SMT
11
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350, Er = 3.48
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
11 - 199